CN106153081A - A kind of Hall substrate attachment structure and hell integrated sensor chip - Google Patents
A kind of Hall substrate attachment structure and hell integrated sensor chip Download PDFInfo
- Publication number
- CN106153081A CN106153081A CN201610436843.5A CN201610436843A CN106153081A CN 106153081 A CN106153081 A CN 106153081A CN 201610436843 A CN201610436843 A CN 201610436843A CN 106153081 A CN106153081 A CN 106153081A
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- China
- Prior art keywords
- hall
- hall substrate
- attachment structure
- substrate
- substrate attachment
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/142—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
The embodiment of the present application provides a kind of Hall substrate attachment structure, and the Hall substrate including at least two shape is electrically connected mutually.Hell integrated sensor chip includes above-mentioned Hall substrate structure.Pass through the embodiment of the present invention, it is possible on the premise of not significantly improving cost, improve sensitivity and reduce magnetic bias.
Description
Technical field
The invention belongs to field of semiconductor technology, particularly relate to a kind of Hall substrate attachment structure and hell integrated sensor
Chip.
Background technology
Silica-base material carrier concentration limits the sensitivity of Hall substrate, causes Hall substrate sensitivity restricted, letter
Ratio of making an uproar is the highest, and we cannot obtain high sensitivity by the simple method amplified, because be also exaggerated by noise simultaneously.For improving base
The sensitivity of sheet also improves signal to noise ratio, and a lot of scientists have done substantial amounts of trial, if chopper-zero-stabilized scheme is by multiple rivals
Use.But, the method introduces modulating frequency can produce following shortcoming:
Modulating frequency creates jittering noise, brings new noise source.
General carrier frequency is 10 times of signal frequency, due to the restriction of carrier frequency, which has limited the respective tones of signal
Rate.
Summary of the invention
The present invention provides a kind of Hall substrate attachment structure and hell integrated sensor chip, to improve sensitivity and to reduce
Magnetic bias.
For achieving the above object, the embodiment of the present invention provides a kind of Hall substrate attachment structure, including at least two shape
Hall substrate be electrically connected mutually.
Preferably, described Hall substrate is sequentially connected in series, and constitutes loop.
Preferably, described Hall substrate is cross and rhombus.
Preferably, the number of Hall substrate is even number
Preferably, Hall substrate attachment structure becomes axial symmetry.
Preferably, described Hall substrate is in a center of symmetry.
Preferably, described Hall substrate is n, and described n Hall substrate is circumferentially, described n >=2.
The present invention also provides for a kind of hell integrated sensor chip, including Hall substrate attachment structure described above.
Pass through the embodiment of the present invention, it is possible on the premise of not significantly improving cost, improve sensitivity and reduce magnetic bias.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present application or technical scheme of the prior art, below will be to embodiment or existing
In having technology to describe, the required accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is only this
Some embodiments described in application, for those of ordinary skill in the art, in the premise not paying creative work
Under, it is also possible to other accompanying drawing is obtained according to these accompanying drawings.
Fig. 1 is the 4 quadrant Hall substrate attachment structure schematic diagrams that the present invention provides；
Fig. 2 is the arrangement conglobate Hall substrate attachment structure schematic diagram that the present invention provides.
Detailed description of the invention
For the technical scheme making those skilled in the art be more fully understood that in the application, real below in conjunction with the application
Execute the accompanying drawing in example, the technical scheme in the embodiment of the present application is clearly and completely described, it is clear that described enforcement
Example is only some embodiments of the present application rather than whole embodiments.Based on the embodiment in the application, this area is common
The every other embodiment that technical staff is obtained under not making creative work premise, all should belong to the application protection
Scope.
Use 4 quadrant high-precision hall substrates symmetrical, be 4 times of original sensitivity, simultaneously so that thermograde and
The magnetic drift that encapsulation stress produces is preferably minimized.
We use 4 quadrant Hall substrate designs, reasonably select substrate shape and connected mode, sensitive before can reach
4 times of degree, suppress noise, and eliminate the defect of chopper-zero-stabilized scheme.As Fig. 1 is 4 quadrant Hall substrates, by interelectrode level
Connection, can eliminate stress and the noise of heat distribution gradient, and to make sensitivity be 4 times of single substrate.Its principle is each substrate
Output signal and noise respectively, by using difform substrate, the advantage that each shape can be obtained, eliminated each by cascade
The noise of individual shape Substrate.Fig. 1 show an example optimized.Optimization can be obtained by cross and rhombus substrate combination
Sensitivity and biasing.Being construed to, cross substrate bias is little, rhombus highly sensitive.By this combination, connect as shown in Figure 1
Connect, the sensitivity that can obtain in x direction and y direction, and make the biased error caused by encapsulation generation stress the least.Four
Concatenation can improve sensitivity 4 times.
Fig. 2 is another example, is made up of n Hall plate.Intersected along circular arrangement by cross and rhombus substrate.This
Sample, it can improve spirit lightness n times, additionally can improve sensitivity further, and eliminate the biasing mistake produced at all angles stress
Difference, is suitable for high-end applications.Of course, owing to n Hall plate causes chip area 1 increased so that cost increases, thus suitable
Close the requirement of high-precision applications.
Although depicting the application by embodiment, it will be appreciated by the skilled addressee that the application have many deformation and
Change is without deviating from spirit herein, it is desirable to appended claim includes that these deformation and change are without deviating from the application's
Spirit.
Claims (8)
1. a Hall substrate attachment structure, it is characterised in that include that the Hall substrate of at least two shape is electrically connected mutually.
2. Hall substrate attachment structure as claimed in claim 1, it is characterised in that described Hall substrate is sequentially connected in series, and structure
Become loop.
3. Hall substrate attachment structure as claimed in claim 1, it is characterised in that described Hall substrate be shaped as cross
And rhombus.
4. Hall substrate attachment structure as claimed in claim 1, it is characterised in that the number of Hall substrate is even number.
5. Hall substrate attachment structure as claimed in claim 1, it is characterised in that described Hall substrate becomes axial symmetry to be distributed.
6. Hall substrate attachment structure as claimed in claim 1, it is characterised in that described Hall substrate is in a center of symmetry.
7. Hall substrate attachment structure as claimed in claim 1, it is characterised in that described Hall substrate is n, and described n
Individual Hall substrate circumferentially, described n >=2.
8. a hell integrated sensor chip, it is characterised in that described chip includes institute as any one of claim 1 to 7
The Hall substrate attachment structure stated.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510363715 | 2015-06-29 | ||
| CN2015103637158 | 2015-06-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106153081A true CN106153081A (en) | 2016-11-23 |
Family
ID=57352869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610436843.5A Pending CN106153081A (en) | 2015-06-29 | 2016-06-17 | A kind of Hall substrate attachment structure and hell integrated sensor chip |
Country Status (1)
| Country | Link |
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| CN (1) | CN106153081A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6768301B1 (en) * | 1999-09-09 | 2004-07-27 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Hall sensor array for measuring a magnetic field with offset compensation |
| CN101290946A (en) * | 2007-04-19 | 2008-10-22 | 上海钜胜微电子有限公司 | Method and device for decreasing offset voltage of Hall integrated circuit |
| CN202167545U (en) * | 2011-07-28 | 2012-03-14 | 上海腾怡半导体有限公司 | Hall sensor with low noise and low offset voltage |
| CN102881818A (en) * | 2011-07-15 | 2013-01-16 | 迈克纳斯公司 | Hall effect sensor |
| US20140117983A1 (en) * | 2011-04-14 | 2014-05-01 | Ams Ag | Hall sensor semiconductor component and method for operating the hall sensor semiconductor component |
| CN103874929A (en) * | 2011-10-10 | 2014-06-18 | ams有限公司 | Hall sensor |
-
2016
- 2016-06-17 CN CN201610436843.5A patent/CN106153081A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6768301B1 (en) * | 1999-09-09 | 2004-07-27 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Hall sensor array for measuring a magnetic field with offset compensation |
| CN101290946A (en) * | 2007-04-19 | 2008-10-22 | 上海钜胜微电子有限公司 | Method and device for decreasing offset voltage of Hall integrated circuit |
| US20140117983A1 (en) * | 2011-04-14 | 2014-05-01 | Ams Ag | Hall sensor semiconductor component and method for operating the hall sensor semiconductor component |
| CN102881818A (en) * | 2011-07-15 | 2013-01-16 | 迈克纳斯公司 | Hall effect sensor |
| CN202167545U (en) * | 2011-07-28 | 2012-03-14 | 上海腾怡半导体有限公司 | Hall sensor with low noise and low offset voltage |
| CN103874929A (en) * | 2011-10-10 | 2014-06-18 | ams有限公司 | Hall sensor |
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Application publication date: 20161123 |
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