CN106098879A - A kind of light-emitting diode chip for backlight unit and preparation method thereof - Google Patents
A kind of light-emitting diode chip for backlight unit and preparation method thereof Download PDFInfo
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- CN106098879A CN106098879A CN201610594796.7A CN201610594796A CN106098879A CN 106098879 A CN106098879 A CN 106098879A CN 201610594796 A CN201610594796 A CN 201610594796A CN 106098879 A CN106098879 A CN 106098879A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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Abstract
The invention discloses a kind of light-emitting diode chip for backlight unit and preparation method thereof, belong to technical field of semiconductors.N-type current extending that described light-emitting diode chip for backlight unit includes stacking gradually, N-type limiting layer, multiple quantum well layer, p-type limiting layer, p-type current extending, described light-emitting diode chip for backlight unit also includes non-extinction substrate, AB glue and silicide film, described silicide film is layered on described p-type current extending, described AB glue is coated on described non-extinction substrate, is bonded by described AB glue and described silicide film between described non-extinction substrate and described p-type current extending.The present invention realizes being bonded of non-extinction substrate and LED by AB glue and silicide film, non-extinction substrate is used to substitute GaAs substrate, avoid, owing to substrate extinction causes LED chip brightness relatively low, improve the luminosity of LED chip, user's request can being met.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly to a kind of light-emitting diode chip for backlight unit and preparation method thereof.
Background technology
The light source of new generation attracted most attention as the current whole world, (Light Emitting Diode is called for short light emitting diode
LED) because of advantages such as its high brightness, low in calories, long-life, nontoxic, recyclable recyclings, before most there is development 21 century of being known as
The green illumination light source of scape.
Current reddish yellow light LED chip includes GaAs substrate and stacks gradually N-type current expansion on gaas substrates
Layer, N-type limiting layer, multiple quantum well layer, p-type limiting layer, p-type current extending.
During realizing the present invention, inventor finds that prior art at least there is problems in that
GaAs substrate meeting extinction, causes chip brightness relatively low, it is impossible to meet user's request.
Summary of the invention
The problem relatively low in order to solve prior art chip brightness, embodiments provides a kind of light-emitting diodes tube core
Sheet and preparation method thereof.Described technical scheme is as follows:
On the one hand, embodiments providing a kind of light-emitting diode chip for backlight unit, described light-emitting diode chip for backlight unit includes depending on
The N-type current extending of secondary stacking, N-type limiting layer, multiple quantum well layer, p-type limiting layer, p-type current extending, described luminous two
Pole die also includes non-extinction substrate, AB glue and silicide film, and described silicide film is layered in described p-type electric current
On extension layer, described AB glue is coated on described non-extinction substrate, between described non-extinction substrate and described p-type current extending
It is bonded by described AB glue and described silicide film.
Alternatively, described non-extinction substrate is any one in Sapphire Substrate, silicon substrate, glass substrate.
On the other hand, the preparation method of a kind of light-emitting diode chip for backlight unit, described preparation method are embodiments provided
Including:
Growth N-type current extending, N-type limiting layer, multiple quantum well layer, p-type limiting layer, p-type the most successively
Current extending；
Deposit silicide thin film on described p-type current extending；
A glue and B glue are uniformly mixed to form AB glue, and extract the bubble in described AB glue；
Described AB glue is spin-coated on non-extinction substrate；
Described silicide film and described AB glue are bonded；
Remove described GaAs substrate.
Alternatively, described described silicide film and described AB glue are bonded, including:
Described silicide film and described AB glue are relatively fit together；
Bonder is maintained at 120s under 0kg pressure, room temperature, vacuum state；
Bonder is maintained at 200kg pressure, 100 DEG C, 600s under vacuum state；
Bonder is maintained at 200kg pressure, 150 DEG C, 1800s under vacuum state.
Alternatively, described preparation method includes:
Described silicide film coats a layer photoetching glue；
Described photoresist it is exposed and develops, forming the described photoresist setting figure；
Under the protection of described photoresist, described silicide film forms the cutting extending to described GaAs substrate
Road；
Peel off described photoresist.
Another aspect, embodiments provides a kind of light-emitting diode chip for backlight unit, and described light-emitting diode chip for backlight unit includes
The N-type current extending that stacks gradually, N-type limiting layer, multiple quantum well layer, p-type limiting layer, p-type current extending, described luminescence
Diode chip for backlight unit also includes non-extinction substrate, AB glue and silicide film, and described silicide film is layered in described N-type electricity
On stream extension layer, described AB glue is coated on described non-extinction substrate, described non-extinction substrate and described N-type current extending it
Between be bonded by described AB glue and described silicide film.
Alternatively, described non-extinction substrate is any one in Sapphire Substrate, silicon substrate, glass substrate.
Another aspect, embodiments provides the preparation method of a kind of light-emitting diode chip for backlight unit, described preparation method
Including:
A GaAs substrate grows successively N-type current extending, N-type limiting layer, multiple quantum well layer, p-type limiting layer,
P-type current extending；
Described p-type current extending deposits the first silicide film；
A glue and B glue are uniformly mixed to form an AB glue, and extract the bubble in a described AB glue；
2nd GaAs substrate deposits the second silicon silicided thing thin film, and a described AB glue is spin-coated on described second silicon
On thin film；
By described first silicide film and a described AB glue bonding；
Described 2nd GaAs substrate is formed protective layer；
Remove a described GaAs substrate；
Described N-type current extending deposits the 3rd silicide film；
A glue and B glue are uniformly mixed to form the 2nd AB glue, and extract the bubble in described 2nd AB glue；
Described 2nd AB glue is spin-coated on non-extinction substrate；
By described 3rd silicide film and described 2nd AB glue bonding；
Remove described 2nd GaAs substrate, described second silicide film, a described AB glue, described first silicide thin
Film.
Alternatively, described by described first silicide film with described oneth AB glue bonding, including:
Described first silicide film and a described AB glue are relatively fit together；
Bonder is maintained at 120s under 0kg pressure, room temperature, vacuum state；
Bonder is maintained at 200kg pressure, 100 DEG C, 600s under vacuum state；
Bonder is maintained at 200kg pressure, 150 DEG C, 1800s under vacuum state.
Alternatively, described preparation method includes:
Described 3rd silicide film coats a layer photoetching glue；
Described photoresist it is exposed and develops, forming the described photoresist setting figure；
Under the protection of described photoresist, described 3rd silicide film is formed and extends to cutting of described GaAs substrate
Cut；
Peel off described photoresist.
The technical scheme that the embodiment of the present invention provides has the benefit that
Realize being bonded of non-extinction substrate and LED by AB glue and silicide film, use non-extinction substrate to replace
For GaAs substrate, it is to avoid owing to substrate extinction causes LED chip brightness relatively low, improve the luminosity of LED chip, Ke Yiman
Foot user's request.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, in embodiment being described below required for make
Accompanying drawing be briefly described, it should be apparent that, below describe in accompanying drawing be only some embodiments of the present invention, for
From the point of view of those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to obtain other according to these accompanying drawings
Accompanying drawing.
Fig. 1 is the structural representation of a kind of light-emitting diode chip for backlight unit that the embodiment of the present invention one provides；
Fig. 2 is the flow chart of the preparation method of a kind of light-emitting diode chip for backlight unit that the embodiment of the present invention two provides；
Fig. 3 is the structural representation of a kind of light-emitting diode chip for backlight unit that the embodiment of the present invention two provides；
Fig. 4 is the structural representation of a kind of light-emitting diode chip for backlight unit that the embodiment of the present invention three provides；
Fig. 5 is the flow chart of the preparation method of a kind of light-emitting diode chip for backlight unit that the embodiment of the present invention four provides；
Fig. 6 is the structural representation of a kind of light-emitting diode chip for backlight unit that the embodiment of the present invention four provides.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
Embodiments providing a kind of light-emitting diode chip for backlight unit, see Fig. 1, this light-emitting diode chip for backlight unit includes successively
The N-type current extending 1 of stacking, N-type limiting layer 2, multiple quantum well layer 3, p-type limiting layer 4, p-type current extending 5, this luminescence
Diode chip for backlight unit also includes non-extinction substrate 6, AB glue 7 and silicide film 8, and silicide film 8 is layered in p-type electric current and expands
On exhibition layer 5, AB glue 7 is coated on non-extinction substrate 6, by AB glue 7 and silicon between non-extinction substrate 6 and p-type current extending 5
Thin film 8 is bonded.
It should be noted that AB glue is the another name of two liquid mixed hardening glue, a liquid is this glue (i.e. A glue), and a liquid is hardening
Agent (i.e. B glue), two liquid phases are mixed could harden, and is the one of cold(-)setting agent.
In the present embodiment, N-type current extending 1 is AlGaInP layer, and N-type limiting layer 2 is N-type AlInP layer, Multiple-quantum
Well layer 3 includes that alternately laminated AlGaInP quantum well layer and AlGaInP quantum barrier layer, p-type limiting layer 4 are p-type AlInP layer, P
Type current extending 5 is GaP layer.
Alternatively, non-extinction substrate 6 can be any one in Sapphire Substrate, silicon substrate, glass substrate.Wherein, blue
Gem substrate and glass substrate are transparent substrates, and light transmission can be made to go out；Silicon substrate is reflective substrate, and light can be made from the contrary
Reversely injection.In actual applications, it would however also be possible to employ other printing opacity or reflective substrate, the AB glue that the present embodiment uses can be real
What substrate incumbent is bonded with epitaxial wafer, it is to avoid caused outside LED chip owing to limiting by the material of epitaxial wafer and substrate
Quantum efficiency is low.
Alternatively, AB glue 7 can be PMG-8868.
Alternatively, silicide film 8 can be silicon oxide layer or silicon nitride layer.
Alternatively, the thickness of silicide film 8 can be 1000 angstroms.
Alternatively, the impurity of N-type limiting layer 2 can be element silicon, the doping content of N-type limiting layer 2 can be 8 ×
10-17～3 × 10-18cm-3, the thickness of N-type limiting layer 2 can be 250～550nm, such as 400nm.
Alternatively, the impurity of p-type limiting layer 4 can be magnesium elements, the doping content of p-type limiting layer 4 can be 8 ×
10-17～10-18cm-3, the thickness of p-type limiting layer 4 can be 400～600nm, such as 500nm.
Alternatively, the impurity of p-type current extending 5 can be magnesium elements, the doping content of p-type current extending 5
Can be 2 × 10-18～7 × 10-18cm-3, the thickness of p-type current extending 5 can be 7～10 μm, such as 8.5 μm.
The embodiment of the present invention realizes being bonded of non-extinction substrate and LED by AB glue and silicide film, uses
Non-extinction substrate substitutes GaAs substrate, it is to avoid owing to substrate extinction causes LED chip brightness relatively low, improves sending out of LED chip
Brightness, can meet user's request.
Embodiment two
Embodiments provide the preparation method of a kind of light-emitting diode chip for backlight unit, it is adaptable to preparation embodiment one provides
Light-emitting diode chip for backlight unit, see Fig. 2, this preparation method includes:
Step 201: growth N-type current extending, N-type limiting layer, multiple quantum well layer, p-type limit the most successively
Preparative layer, p-type current extending.
Step 202: deposit silicide thin film on p-type current extending.
Alternatively, this step 202 may include that
Using plasma strengthens chemical vapour deposition technique (Plasma Enhanced Chemical Vapor
Deposition, is called for short PECVD) deposit silicide thin film on p-type current extending.
In a kind of implementation of embodiment, after step 202, this preparation method can also include:
Silicide film coats a layer photoetching glue；
Photoresist it is exposed and develops, forming the photoresist setting figure；
Under the protection of photoresist, silicide film forms the Cutting Road extending to GaAs substrate；
Stripping photoresist.
Alternatively, silicide film is formed the Cutting Road extending to GaAs substrate, may include that
Use wet etching technique etching silicide film；
Employing inductively coupled plasma (Inductive Coupled Plasma Emission Spectrometer,
It is called for short ICP) dry etching technology etching p-type current extending, p-type limiting layer, multiple quantum well layer, N-type limiting layer, N-type electric current
Extension layer.
Fig. 3 is the structural representation of the LED chip after performing step 206 under above-mentioned implementation.In Fig. 3,1 is N-type electricity
Stream extension layer, 2 is N-type limiting layer, and 3 is multiple quantum well layer, and 4 is p-type limiting layer, and 5 is p-type current extending, and 6 is non-extinction lining
The end, 7 is AB glue, and 8 is silicide film, and 10 is Cutting Road.Hereafter, cut along Cutting Road, i.e. can get some the most only
Vertical LED chip.
Step 203: A glue and B glue are uniformly mixed to form AB glue, and extract the bubble in AB glue.
Alternatively, A glue and B glue are uniformly mixed to form AB glue, may include that
A glue and B glue are left in two containers respectively by the volume ratio of 1:1；
By the volume ratio of 1:1, A glue is added dimethylbenzene dilute and stir；
By the volume ratio of 1:1, B glue is added dimethylbenzene dilute and stir；
After the diluent of A glue and the diluent of B glue all stir, A glue and B glue are mixed and stirred for uniformly, i.e.
Obtain AB glue.
Alternatively, the bubble in extraction AB glue, may include that
Use deaeration machine or the equipment of evacuation, the bubble in AB glue is drained only.
Step 204: AB glue is spin-coated on non-extinction substrate.
Alternatively, this step 204 may include that
Use automatic sol evenning machine or manual sol evenning machine, AB glue is spin-coated on non-extinction substrate.
Step 205: silicide film and AB glue are bonded.
Alternatively, this step 205 may include that
Silicide film and AB glue are relatively fit together；
Bonder is maintained at 120s under 0kg pressure, room temperature, vacuum state；
Bonder is maintained at 200kg pressure, 100 DEG C, 600s under vacuum state；
Bonder is maintained at 200kg pressure, 150 DEG C, 1800s under vacuum state.
It should be noted that bonder to be maintained at 120s under 0kg pressure, room temperature, vacuum state, be conducive to adhesive surface
In bubble drain only；Bonder is maintained at 200kg pressure, 100 DEG C, dilute in 600s, beneficially AB glue under vacuum state
Release agent volatilization；Bonder is maintained at 200kg pressure, 150 DEG C, 1800s, beneficially AB adhesive curing under vacuum state.
Step 206: remove GaAs substrate.
Alternatively, this step 206 may include that
GaAs substrate is placed in the substrate remover of 45 DEG C 30～60min.
Specifically, substrate remover can be volume ratio be the NH of 1:2:14OH、H2O2、H2O mixes.
The embodiment of the present invention realizes being bonded of non-extinction substrate and LED by AB glue and silicide film, uses
Non-extinction substrate substitutes GaAs substrate, it is to avoid owing to substrate extinction causes LED chip brightness relatively low, improves sending out of LED chip
Brightness, can meet user's request.
Embodiment three
Embodiments provide a kind of light-emitting diode chip for backlight unit, see Fig. 4, this light-emitting diode chip for backlight unit and embodiment
The difference of one light-emitting diode chip for backlight unit provided is, silicide film 8 is layered on N-type current extending 1, non-extinction
It is bonded by AB glue 7 and silicide film 8 between substrate 6 and N-type current extending 1.
The embodiment of the present invention realizes being bonded of non-extinction substrate and LED by AB glue and silicide film, uses
Non-extinction substrate substitutes GaAs substrate, it is to avoid owing to substrate extinction causes LED chip brightness relatively low, improves sending out of LED chip
Brightness, can meet user's request.
Embodiment four
Embodiments provide the preparation method of a kind of light-emitting diode chip for backlight unit, it is adaptable to preparation embodiment three provides
Light-emitting diode chip for backlight unit, see Fig. 5, this preparation method includes:
Step 401: grow N-type current extending, N-type limiting layer, multiple quantum well layer, P on a GaAs substrate successively
Type limiting layer, p-type current extending.
Specifically, this step 401 can be similar with the step 201 in embodiment two, is not described in detail in this.
Step 402: deposit the first silicide film on p-type current extending.
Specifically, this step 402 can be similar with the step 202 in embodiment two, is not described in detail in this.
Alternatively, the first silicide film can be silicon oxide layer or silicon nitride layer.
Alternatively, the thickness of the first silicide film can be 2 μm.
Step 403: A glue and B glue are uniformly mixed to form an AB glue, and extract the bubble in an AB glue.
Specifically, this step 403 can be similar with the step 203 in embodiment two, is not described in detail in this.
Alternatively, an AB glue can be PMG-8868.
Step 404: deposit the second silicide film on the 2nd GaAs substrate, and an AB glue is spin-coated on the second silication
On thing thin film.
It should be noted that due to GaAs substrate cannot company gluing with AB, therefore the present embodiment utilizes silicide film
Cannot company gluing with AB by GaAs substrate.
Alternatively, the thickness of the second silicide film can be 1000 angstroms.
Specifically, this step 404 can be similar with the step 201 in embodiment two and step 204, is not described in detail in this.
Step 405: the first silicide film and an AB glue are bonded.
Specifically, this step 405 can be similar with the step 205 in embodiment two, is not described in detail in this.
Step 406: form protective layer on the 2nd GaAs substrate.
Alternatively, this step 406 may include that
Manual sol evenning machine or automatic sol evenning machine is used to coat a layer photoetching glue on the 2nd GaAs substrate；
Photoresist is carried out temperature be 90 DEG C, time a length of 20min baking, photoresist is dried.
It should be noted that protective layer is during removing a GaAs substrate (referring to step 407), prevent second
GaAs substrate is removed in the lump and is arranged on the 2nd GaAs substrate.During the 2nd GaAs substrate to be removed, protective layer natural
And remove, therefore need not individually remove protective layer.
Step 407: remove a GaAs substrate.
Specifically, this step 407 can be similar with the step 206 in embodiment two, is not described in detail in this.
Step 408: deposit the 3rd silicide film on N-type current extending.
Specifically, this step 408 can be similar with step 402, is not described in detail in this.
Alternatively, the 3rd silicide film can be silicon oxide layer or silicon nitride layer.
Alternatively, the thickness of the 3rd silicide film can be 1000 angstroms.
In a kind of implementation of embodiment, after step 202, this preparation method can also include:
3rd silicide film coats a layer photoetching glue；
Photoresist it is exposed and develops, forming the photoresist setting figure；
Under the protection of photoresist, the 3rd silicide film forms the Cutting Road extending to GaAs substrate；
Stripping photoresist.
Alternatively, the 3rd silicide film is formed the Cutting Road extending to GaAs substrate, may include that
Use wet etching technique etching the 3rd silicide film；
Use ICP dry etching technology etching N-type current extending, N-type limiting layer, multiple quantum well layer, p-type limiting layer, P
Type current extending.
Fig. 6 is the structural representation of the LED chip after performing step 412 under above-mentioned implementation.In Fig. 6,1 is N-type electricity
Stream extension layer, 2 is N-type limiting layer, and 3 is multiple quantum well layer, and 4 is p-type limiting layer, and 5 is p-type current extending, and 6 is non-extinction lining
The end, 7 is the 2nd AB glue, and 8 is the 3rd silicide film, and 10 is Cutting Road.Hereafter, cut along Cutting Road, if i.e. available
Dry separate LED chip.
Step 409: A glue and B glue are uniformly mixed to form the 2nd AB glue, and extract the bubble in the 2nd AB glue.
Specifically, this step 409 can be similar with step 403, is not described in detail in this.
Alternatively, the 2nd AB glue can be PMG-8868.
Step 410: the 2nd AB glue is spin-coated on non-extinction substrate.
Specifically, this step 410 can be similar with step 404, is not described in detail in this.
Step 411: the 3rd silicide film and the 2nd AB glue are bonded.
Specifically, this step 411 can be similar with step 405, is not described in detail in this.
Step 412: remove the 2nd GaAs substrate, the second silicide film, an AB glue, the first silicide film.
Alternatively, this step 412 may include that
GaAs substrate is placed in the substrate remover of 45 DEG C 30～60min, removes the 2nd GaAs substrate；
Chip is immersed in buffer oxide silicon etching liquid (Buffer Oxide Etcher is called for short BOE) solution, passes through
First silicide film of silicon oxide etching solution sideetching 2 μm, realize simultaneously the first silicide film, an AB glue, second
The removal of silicide film.
Specifically, substrate remover can be volume ratio be the NH of 1:2:14OH、H2O2、H2O mixes.
The embodiment of the present invention realizes being bonded of non-extinction substrate and LED by AB glue and silicide film, uses
Non-extinction substrate substitutes GaAs substrate, it is to avoid owing to substrate extinction causes LED chip brightness relatively low, improves sending out of LED chip
Brightness, can meet user's request.
The invention described above embodiment sequence number, just to describing, does not represent the quality of embodiment.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all spirit in the present invention and
Within principle, any modification, equivalent substitution and improvement etc. made, should be included within the scope of the present invention.
Claims (10)
1. a light-emitting diode chip for backlight unit, described light-emitting diode chip for backlight unit includes N-type current extending, the N-type limit stacked gradually
Preparative layer, multiple quantum well layer, p-type limiting layer, p-type current extending, it is characterised in that described light-emitting diode chip for backlight unit also includes non-
Extinction substrate, AB glue and silicide film, described silicide film is layered on described p-type current extending, described AB glue
It is coated on described non-extinction substrate, by described AB glue and institute between described non-extinction substrate and described p-type current extending
State silicide film bonding.
Light-emitting diode chip for backlight unit the most according to claim 1, it is characterised in that described non-extinction substrate is sapphire lining
Any one in the end, silicon substrate, glass substrate.
3. the preparation method of a light-emitting diode chip for backlight unit, it is characterised in that described preparation method includes:
Growth N-type current extending, N-type limiting layer, multiple quantum well layer, p-type limiting layer, p-type electric current the most successively
Extension layer；
Deposit silicide thin film on described p-type current extending；
A glue and B glue are uniformly mixed to form AB glue, and extract the bubble in described AB glue；
Described AB glue is spin-coated on non-extinction substrate；
Described silicide film and described AB glue are bonded；
Remove described GaAs substrate.
Preparation method the most according to claim 3, it is characterised in that described by described silicide film with described AB glue key
Close, including:
Described silicide film and described AB glue are relatively fit together；
Bonder is maintained at 120s under 0kg pressure, room temperature, vacuum state；
Bonder is maintained at 200kg pressure, 100 DEG C, 600s under vacuum state；
Bonder is maintained at 200kg pressure, 150 DEG C, 1800s under vacuum state.
5. according to the preparation method described in claim 3 or 4, it is characterised in that described preparation method includes:
Described silicide film coats a layer photoetching glue；
Described photoresist it is exposed and develops, forming the described photoresist setting figure；
Under the protection of described photoresist, described silicide film forms the Cutting Road extending to described GaAs substrate；
Peel off described photoresist.
6. a light-emitting diode chip for backlight unit, described light-emitting diode chip for backlight unit includes N-type current extending, the N-type limit stacked gradually
Preparative layer, multiple quantum well layer, p-type limiting layer, p-type current extending, it is characterised in that described light-emitting diode chip for backlight unit also includes non-
Extinction substrate, AB glue and silicide film, described silicide film is layered on described N-type current extending, described AB glue
It is coated on described non-extinction substrate, by described AB glue and institute between described non-extinction substrate and described N-type current extending
State silicide film bonding.
Light-emitting diode chip for backlight unit the most according to claim 6, it is characterised in that described non-extinction substrate is sapphire lining
Any one in the end, silicon substrate, glass substrate.
8. the preparation method of a light-emitting diode chip for backlight unit, it is characterised in that described preparation method includes:
A GaAs substrate grows N-type current extending, N-type limiting layer, multiple quantum well layer, p-type limiting layer, p-type successively
Current extending；
Described p-type current extending deposits the first silicide film；
A glue and B glue are uniformly mixed to form an AB glue, and extract the bubble in a described AB glue；
2nd GaAs substrate deposits the second silicon silicided thing thin film, and a described AB glue is spin-coated on described second silicide
On thin film；
By described first silicide film and a described AB glue bonding；
Described 2nd GaAs substrate is formed protective layer；
Remove a described GaAs substrate；
Described N-type current extending deposits the 3rd silicide film；
A glue and B glue are uniformly mixed to form the 2nd AB glue, and extract the bubble in described 2nd AB glue；
Described 2nd AB glue is spin-coated on non-extinction substrate；
By described 3rd silicide film and described 2nd AB glue bonding；
Remove described 2nd GaAs substrate, described second silicide film, a described AB glue, described first silicide film.
Preparation method the most according to claim 8, it is characterised in that described by described first silicide film with described
One AB glue bonding, including:
Described first silicide film and a described AB glue are relatively fit together；
Bonder is maintained at 120s under 0kg pressure, room temperature, vacuum state；
Bonder is maintained at 200kg pressure, 100 DEG C, 600s under vacuum state；
Bonder is maintained at 200kg pressure, 150 DEG C, 1800s under vacuum state.
Preparation method the most according to claim 8 or claim 9, it is characterised in that described preparation method includes:
Described 3rd silicide film coats a layer photoetching glue；
Described photoresist it is exposed and develops, forming the described photoresist setting figure；
Under the protection of described photoresist, described 3rd silicide film forms the cutting extending to described GaAs substrate
Road；
Peel off described photoresist.
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| US6071795A (en) * | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
| CN103258931A (en) * | 2009-04-28 | 2013-08-21 | 晶元光电股份有限公司 | Photoelectric element with transparent bonding structure and manufacturing method thereof |
| CN104617195A (en) * | 2015-02-06 | 2015-05-13 | 扬州乾照光电有限公司 | Near infrared LED and production method thereof |
| CN205900576U (en) * | 2016-07-25 | 2017-01-18 | 华灿光电（浙江）有限公司 | Light emitting diode chip |
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2016
- 2016-07-25 CN CN201610594796.7A patent/CN106098879B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6071795A (en) * | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
| CN103258931A (en) * | 2009-04-28 | 2013-08-21 | 晶元光电股份有限公司 | Photoelectric element with transparent bonding structure and manufacturing method thereof |
| CN104617195A (en) * | 2015-02-06 | 2015-05-13 | 扬州乾照光电有限公司 | Near infrared LED and production method thereof |
| CN205900576U (en) * | 2016-07-25 | 2017-01-18 | 华灿光电（浙江）有限公司 | Light emitting diode chip |
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