CN106098830A - The solaode string of a kind of homonymy interconnection and preparation method and assembly and system - Google Patents
The solaode string of a kind of homonymy interconnection and preparation method and assembly and system Download PDFInfo
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- CN106098830A CN106098830A CN201610622098.3A CN201610622098A CN106098830A CN 106098830 A CN106098830 A CN 106098830A CN 201610622098 A CN201610622098 A CN 201610622098A CN 106098830 A CN106098830 A CN 106098830A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 79
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 79
- 239000010703 silicon Substances 0.000 claims abstract description 79
- 239000013078 crystal Substances 0.000 claims abstract description 55
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 42
- 238000003466 welding Methods 0.000 claims abstract description 24
- 229910052782 aluminium Inorganic materials 0.000 claims description 27
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 27
- 239000011159 matrix material Substances 0.000 claims description 25
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims description 11
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims description 11
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 230000009466 transformation Effects 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000012528 membrane Substances 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 4
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The present invention relates to the solaode string of a kind of homonymy interconnection and preparation method and assembly and system.A kind of solaode string of the homonymy interconnection of the present invention, including N-type crystalline silicon solaode and P-type crystal silicon solaode, N-type crystalline silicon solaode and P-type crystal silicon solaode are arranged alternately with each other, and adjacent N-type crystalline silicon solaode and P-type crystal silicon solaode are interconnected by conductive strips homonymy.It provides the benefit that: the conversion efficiency of crystal silicon solar energy battery is higher, and raw material sources is simple.Solaode string uses the method for homonymy interconnection to be cascaded, can effectively reduce welding the stress of cell piece is damaged, can the spacing arranged between cell piece infinitely be reduced, thicker conductive strips can be used to carry out the series connection of cell piece, thus improve reliability and the long-time stability of photovoltaic module, thus improve the life-span of photovoltaic module.
Description
Technical field
The present invention relates to area of solar cell, the solaode string interconnected particularly to a kind of homonymy and preparation method
With assembly and system.
Background technology
Solaode is a kind of semiconductor device converting light energy into electric energy, relatively low production cost and higher energy
Amount transformation efficiency is always the target that solar cell industry is pursued.In the past few years, the battery technology of industrialization obtains
The development advanced by leaps and bounds, at present, the PERC battery technology and the N-type double-side cell technology that represent main flow battery efficiency all achieve
Important breakthrough, both volume production transformation efficiencies are all between 20.5%-21% at present.But, although battery technology achieves huge
Big success and breakthrough, but corresponding establishment of component technology still rests on original level, i.e. uses the interconnection of welding heteropleural
Same type of battery is carried out series welding connection by mode, forms solaode string, and then according to glass, EVA, solaode
String, EVA, the order of back veneer material carry out being laminated and assembly is made in encapsulation.The welding of the battery strings that the assembly of the type is used
Mode exists the problem of following several respects, 1), owing to using heteropleural interconnection, it is desirable to the thickness of welding can not be the thickest, and experiment confirms
The thickness welding more than 0.3mm will bring to assembly and hidden split problem, uses relatively thin welding can cause higher ohmic loss,
The CTM causing assembly rises；2), the cell piece of arbitrary neighborhood uses the mode that heteropleural interconnects, if arbitrary neighborhood two is electric
Pond sheet is the most close, and due to the stress effect of welding, cell piece there will be broken, and therefore, in traditional components, adjacent cell sheet is extremely
The welding of 2mm to be reserved overcomes this problem, and causing the power density of assembly to be compared compared with battery has the decline of certain amplitude.
Summary of the invention
It is an object of the invention to provide a kind of resistance to hidden split, the solaode string of the homonymy interconnection of high efficiency, low stress
And preparation method and assembly and system.The battery strings of the present invention uses the structure of homonymy interconnection that solaode is connected on one
Rise, form solaode string, be possible not only to effectively reduce in conventional batteries series system owing to conductive strips thickness is introduced
The stress of battery is damaged, it is to avoid owing to stress causes conductive strips sealing-off and cell piece to rupture, it is also possible between cell piece
The spacing of arrangement infinitely reduces, and improves the power density of photovoltaic module unit are, and then improves the packaging efficiency of photovoltaic module；
Additionally homonymy series system can use thicker conductive strips to carry out the series connection of cell piece, thus the ohm effectively reducing assembly damages
Consumption, improves the fill factor, curve factor of assembly.
The solaode string of a kind of homonymy interconnection that the present invention provides, its main technical schemes is:
The solaode string of a kind of homonymy interconnection, including N-type crystalline silicon solaode and P-type crystal silicon solar-electricity
Pond, N-type crystalline silicon solaode and P-type crystal silicon solaode are arranged alternately with each other, adjacent N-type crystalline silicon solar energy
Battery and P-type crystal silicon solaode are interconnected by conductive strips homonymy.
Wherein, N-type crystalline silicon solaode includes that n-type silicon matrix, the front surface of n-type silicon matrix set the most successively
Being equipped with p+ doped region, passivated reflection reducing membrane and the p+ electrode with p+ doped region Ohmic contact, the back surface of n-type silicon matrix is from interior
N+ doped region, passivating film and the n+ electrode with n+ doped region Ohmic contact it is disposed with to outward.
Wherein, P-type crystal silicon solaode is full aluminum back surface field crystal silicon solar energy battery, the full aluminum back surface field crystalline silicon sun
Can include that P-type silicon matrix, the front surface of P-type silicon matrix are disposed with n+ doped region, passivated reflection reducing membrane from inside to outside by battery
And with the n+ electrode of n+ doped region Ohmic contact；The back surface of P-type silicon matrix is disposed with Quan Lv back surface field district from inside to outside
Territory and the aluminum electrode of aluminum back surface field Ohmic contact and metal primary line electrode.
Wherein, P-type crystal silicon solaode is p-type PERC solaode, and p-type PERC solaode includes p-type
Silicon substrate, the front surface of P-type silicon matrix be disposed with from inside to outside n+ doped region, passivated reflection reducing membrane and with n+ doped region
The n+ electrode of Ohmic contact；The back surface of P-type silicon matrix is disposed with the aluminum back surface field area, blunt of local p+ doping from inside to outside
Change aluminum electrode and the metal primary line electrode of the aluminum back surface field area Ohmic contact of film and p+ doping.
Wherein, in the N-type crystalline silicon solaode and P-type crystal silicon solaode of arbitrary neighborhood, N-type crystalline silicon
The anelectrode of solaode is arranged on the front surface of battery, and negative electrode is arranged on the back surface of battery, P-type crystal silicon solar energy
The negative pole of battery is arranged on the front surface of battery, and anelectrode is arranged on the back surface of battery.
Wherein, between N-type crystalline silicon solaode and P-type crystal silicon solaode be spaced apart 0.05～
0.19mm。
Wherein, conductive strips are the weldings of stannum parcel copper, and welding width is 0.5-2mm, and welding thickness is 0.2-1.0mm.
Wherein, the short circuit current fluctuation scope of N-type crystalline silicon solaode and described P-type crystal silicon solaode is
50-100mA, transformation efficiency fluctuation range is 0.2%-0.4%.
Present invention also offers the preparation method of the solaode string of a kind of homonymy interconnection, comprise the following steps:
(1), according to short circuit current and the transformation efficiency of solaode, cell piece is carried out stepping, pick out short circuit current
Fluctuation range is 50-100mA, and transformation efficiency fluctuation range is N-type crystalline silicon solaode and the p-type crystalline substance of 0.2%-0.4%
Body silicon solar cell；
(2) N-type crystalline silicon solaode and P-type crystal silicon solaode after, being completed by stepping are the most mutually handed over
For arrangement；
(3), by conductive strips by same to the N-type crystalline silicon solaode being arranged in order and P-type crystal silicon solaode
Side interconnects, and forms the solaode string of homonymy interconnection.
Present invention also offers a kind of solar module, be followed successively by front layer material, encapsulating material, the sun from top to bottom
Energy battery strings, encapsulating material, backsheet, solaode string is the solaode string of above-mentioned homonymy interconnection.
Present invention also offers a kind of solar cell system, including more than one solar module, solar energy
Battery component is above-mentioned solar module.
The enforcement of the present invention includes techniques below effect:
(1) The present invention gives novel solaode series system, the electrode of solar battery sheet passes through conductive strips
It is connected with adjacent solar cell sheet in same side, the stress produced when reducing conductive strips interconnection, it is to avoid owing to stress causes
Welding sealing-off and cell piece rupture, and improve reliability and the long-time stability of photovoltaic module, thus improve the longevity of photovoltaic module
Life.
(2) structure using this homonymy to interconnect can reduce the spacing between solar battery sheet, improves photovoltaic module list
The power density that plane is long-pending, and then improve the packaging efficiency of photovoltaic module；The conversion efficiency of crystal silicon solar energy battery is higher, former
Material source is simple.
(3) the homonymy cascaded structure that the present invention uses can use thicker welding or conductive strips, thus is substantially reduced group
The ohmic loss of part, improves the fill factor, curve factor of assembly, and then improves component power.
Accompanying drawing explanation
Fig. 1 is the N-type crystalline silicon solar battery structure schematic diagram of the solaode string of a kind of homonymy of present invention interconnection.
Fig. 2 is the structure of the full aluminum back surface field crystal silicon solar energy battery of the solaode string of a kind of homonymy of present invention interconnection
Schematic diagram.
Fig. 3 is the p-type PERC solar battery structure schematic diagram of the present invention full aluminum back surface field crystal silicon solar energy battery.
Fig. 4 is the structural representation of the solaode string of a kind of homonymy of present invention interconnection.
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, the present invention is described in detail, it should be pointed out that described reality
Execute example and be intended merely to facilitate the understanding of the present invention, and it is not played any restriction effect.
The solaode string of a kind of homonymy interconnection that the present embodiment provides, including N-type crystalline silicon solaode and p-type
Crystal silicon solar energy battery, N-type crystalline silicon solaode and P-type crystal silicon solaode are arranged alternately with each other, adjacent N
Type crystal silicon solar energy battery and P-type crystal silicon solaode are interconnected by conductive strips homonymy；N-type crystalline silicon solaode
And it is spaced apart 0.05～0.19mm between P-type crystal silicon solaode；Preferably, conductive strips are the weldings of stannum parcel copper,
Welding width is 0.5-2mm, and welding thickness is 0.2-1.0mm.P-type crystal silicon solaode is the full aluminum back surface field crystalline silicon sun
Can battery or p-type PERC solaode.Solaode string uses the structures in series of homonymy interconnection together, can be effective
Reduce in conventional batteries series system owing to the stress to cell piece that conductive strips thickness is introduced damages, it is to avoid due to stress guide
Cause conductive strips sealing-off and cell piece ruptures, thus improve reliability and the long-time stability of photovoltaic module, thus improve photovoltaic
The life-span of assembly.The spacing arranged between cell piece can also infinitely be reduced by the battery strings structure of the present invention, improves photovoltaic group
The power density of part unit are, and then improve the packaging efficiency of photovoltaic module.The homonymy series cells that the present invention uses
Structure can use thicker conductive strips to carry out the series connection of cell piece, thus effectively reduces the ohmic loss of assembly, improves assembly
Fill factor, curve factor, and then improve component power.
As it is shown in figure 1, the N-type crystalline silicon solaode that the present embodiment is selected is N-type double-side cell, brilliant including N-type
Body silicon substrate 10, the front surface of N-type crystalline silicon matrix 10 includes p+ doped region 12 the most from inside to outside, passivated reflection reducing membrane 16
And with the p+ electrode 20 of p+ doped region 12 Ohmic contact, p+ electrode 20 is the thin gate line electrode of silver and cathode metal primary gate electrode；N
The back surface of type crystalline silicon matrix include n+ doped region 14 the most from inside to outside, passivating film 18 and with n+ doped region 14 Europe
The n+ electrode 22 of nurse contact, n+ electrode 22 is the thin gate line electrode of silver and negative metal primary gate electrode.
As in figure 2 it is shown, the P-type crystal silicon solaode that the present embodiment is selected is full aluminum back surface field crystal silicon solar electricity
Pond, including P-type silicon matrix 30, the front surface of P-type silicon matrix 30 includes n+ doped region 32 the most from inside to outside, passivated reflection reducing
Film 34 and the n+ electrode 38 with n+ doped region 32 Ohmic contact, n+ electrode 38 is silver grating line electrode and negative metal main grid electricity
Pole；The back surface of P-type silicon matrix include the most from inside to outside aluminium paste sintering formed full aluminum back surface field area 40 and with aluminum back surface field
The aluminum electrode 36 contacted and cathode metal main gate line electrode (not shown).
As it is shown on figure 3, the P-type crystal silicon solaode of the present embodiment can also select p-type PERC solaode, bag
Including P-type silicon matrix 50, the front surface of P-type crystal silicon matrix includes n+ doped region 52 the most from inside to outside, passivated reflection reducing membrane
54 and n+ electrode 60 with n+ doped region 52 Ohmic contact；The back surface of P-type crystal silicon matrix includes the most from inside to outside
The aluminum back surface field area 62 of the local p+ doping that aluminium paste sintering is formed, passivating film 56 and the Europe, aluminum back surface field area 62 with local p+ doping
The aluminum electrode 58 of nurse contact and cathode metal main gate line electrode (not shown).
The present embodiment additionally provides the preparation method of solaode string of a kind of homonymy as above interconnection, including with
Lower step:
(1), first short circuit current and transformation efficiency according to battery, by cell piece stepping, picks out the identical number of same gear
The N-type crystalline silicon solaode of amount and P-type crystal silicon solaode, be specially the N-type crystalline silicon solar-electricity selected
Pond and P-type crystal silicon solaode short circuit current fluctuation scope control within 50-100mA, transformation efficiency fluctuation range
Control within 0.2%-0.4%.
(2) solaode after, being completed by stepping is according to N-type crystalline silicon solaode, P-type crystal silicon solar-electricity
Pond, N-type crystalline silicon solaode, P-type crystal silicon solaode ... arrangement mode be arranged alternately with each other successively, appoint
The spacing between two adjacent cell pieces of anticipating can be formulated according to actual requirement, and the spacing of the most any two adjacent cell pieces is permissible
The most close.In the present embodiment between N-type crystalline silicon solaode and P-type crystal silicon solaode be spaced apart 0.05～
0.19mm, preferably 0.11～0.19mm.Two pieces of solaodes of arbitrary neighborhood, one of for N-type crystalline silicon solar energy
Battery, another block is P-type crystal silicon solaode, and the anelectrode of N-type crystalline silicon solaode is at the front surface of battery, negative
Electrode is at the back surface of battery, and the negative pole of P-type crystal silicon solaode is at the front surface of battery, and anelectrode is at the back of the body table of battery
Face.
(3), by conductive strips 100 by the above-mentioned N-type crystalline silicon solaode 101 being arranged in order and P-type crystal silicon too
Sun can form solaode string according to the mode that homonymy is connected, as shown in Figure 4 by battery.In the present embodiment, the P-type crystal silicon sun
P-type PERC solaode 102, the positive electricity of the N-type crystalline silicon solaode 101 of arbitrary neighborhood in battery strings can be selected by battery
Pole is connected with the negative electrode of p-type PERC solaode 102, the negative electrode of N-type crystalline silicon solaode 101 and p-type PERC
The anelectrode of solaode 102 connects, and conductive strips selected in the present embodiment are the weldings of stannum parcel copper, and welding width can
Electing 0.5-2mm as, welding thickness is chosen as 0.2-1.0mm.The selection of above-mentioned welding and numerical value is particularly suitable for the connection of battery strings,
Ensure that the bonding strength of battery strings, be also substantially reduced the ohmic loss of battery strings, improve the fill factor, curve factor of battery strings, and then
Improve the power of battery strings.
Present invention also offers a kind of solar module, be followed successively by glass, EVA, homonymy interconnection from top to bottom too
Sun can battery strings, EVA, the order of back veneer material be carried out being laminated and general components is made in encapsulation；Or it is followed successively by glass from top to bottom
The solaode string of glass, EVA, homonymy interconnection, EVA, the order of glass carry out being laminated and solar double-glass assemblies is made in encapsulation, this sun
Energy battery component inherits the packaging technology of traditional components, can be mutually compatible with existing component package equipment and technique.Homonymy interconnects
Solaode string be the solaode string of above-mentioned homonymy interconnection.
Present invention also offers a kind of solar cell system, including more than one solar module, solar energy
Battery component is above-mentioned solar module.
Last it should be noted that, above example is only in order to illustrate technical scheme, rather than the present invention is protected
Protecting the restriction of scope, although having made to explain to the present invention with reference to preferred embodiment, those of ordinary skill in the art should
Work as understanding, technical scheme can be modified or equivalent, without deviating from the reality of technical solution of the present invention
Matter and scope.
Claims (11)
1. a solaode string for homonymy interconnection, including N-type crystalline silicon solaode and P-type crystal silicon solar-electricity
Pond, it is characterised in that: described N-type crystalline silicon solaode and described P-type crystal silicon solaode are arranged alternately with each other, phase
Adjacent described N-type crystalline silicon solaode and described P-type crystal silicon solaode are interconnected by conductive strips homonymy.
The solaode string of a kind of homonymy the most according to claim 1 interconnection, it is characterised in that: described N-type crystalline silicon
Solaode includes that n-type silicon matrix, the front surface of described n-type silicon matrix are disposed with p+ doped region, blunt from inside to outside
Changing antireflective film and the p+ electrode with p+ doped region Ohmic contact, the back surface of described n-type silicon matrix sets gradually from inside to outside
There are n+ doped region, passivating film and the n+ electrode with n+ doped region Ohmic contact.
The solaode string of a kind of homonymy the most according to claim 1 and 2 interconnection, it is characterised in that: described P-type crystal
Silicon solar cell is full aluminum back surface field crystal silicon solar energy battery, and described full aluminum back surface field crystal silicon solar energy battery includes P-type silicon
Matrix, the front surface of described P-type silicon matrix be disposed with from inside to outside n+ doped region, passivated reflection reducing membrane and with n+ doped region
The n+ electrode of territory Ohmic contact；The back surface of described P-type silicon matrix is disposed with full aluminum back surface field area and the aluminum back of the body from inside to outside
The aluminum electrode of field Ohmic contact and metal primary line electrode.
The solaode string of a kind of homonymy the most according to claim 1 and 2 interconnection, it is characterised in that: described P-type crystal
Silicon solar cell is p-type PERC solaode, and described p-type PERC solaode includes P-type silicon matrix, P-type silicon matrix
Front surface be disposed with from inside to outside n+ doped region, passivated reflection reducing membrane and with the n+ of n+ doped region Ohmic contact electricity
Pole；The back surface of P-type silicon matrix is disposed with the aluminum back surface field area of local p+ doping, passivating film and p+ doping from inside to outside
The aluminum electrode of aluminum back surface field area Ohmic contact and metal primary line electrode.
The solaode string of a kind of homonymy the most according to claim 1 interconnection, it is characterised in that: at the N of arbitrary neighborhood
In type crystal silicon solar energy battery and P-type crystal silicon solaode, the anelectrode of N-type crystalline silicon solaode is arranged on electricity
The front surface in pond, negative electrode is arranged on the back surface of battery, and the negative pole of P-type crystal silicon solaode is arranged on the main schedule of battery
Face, anelectrode is arranged on the back surface of battery.
The solaode string of a kind of homonymy the most according to claim 1 interconnection, it is characterised in that: described N-type crystalline silicon
It is spaced apart 0.05～0.19mm between solaode and described P-type crystal silicon solaode.
The solaode string of a kind of homonymy the most according to claim 1 and 2 interconnection, it is characterised in that: described conductive strips
Being the welding of stannum parcel copper, welding width is 0.5-2mm, and welding thickness is 0.2-1.0mm.
The solaode string of a kind of homonymy the most according to claim 1 and 2 interconnection, it is characterised in that: described N-type crystal
The short circuit current fluctuation scope of silicon solar cell and described P-type crystal silicon solaode is 50-100mA, transformation efficiency ripple
Dynamic scope is 0.2%-0.4%.
9. the preparation method of the solaode string of a homonymy interconnection, it is characterised in that: comprise the following steps:
(1), according to short circuit current and the transformation efficiency of solaode, cell piece is carried out stepping, pick out short circuit current fluctuation
Scope is 50-100mA, and transformation efficiency fluctuation range is N-type crystalline silicon solaode and the P-type crystal silicon of 0.2%-0.4%
Solaode；
(2) the N-type crystalline silicon solaode after, stepping being completed and the P-type crystal silicon solaode row of alternateing successively
Row；
(3), by conductive strips by mutual for N-type crystalline silicon solaode and the P-type crystal silicon solaode homonymy being arranged in order
Connection, forms the solaode string of homonymy interconnection.
10. a solar module, is followed successively by front layer material, encapsulating material, solaode string, encapsulation material from top to bottom
Material, backsheet, it is characterised in that: described solaode string is the sun of the arbitrary described homonymy interconnection of claim 1-8
Can battery strings.
11. 1 kinds of solar cell systems, including more than one solar module, it is characterised in that: described solar energy
Battery component is the solar module described in claim 10.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449798A (en) * | 2016-11-16 | 2017-02-22 | 南昌大学 | Double-side light-inlet crystal silicon photovoltaic module and manufacturing method thereof |
| CN110085695A (en) * | 2019-04-17 | 2019-08-02 | 江苏辉伦太阳能科技有限公司 | A kind of arrangement method and solar cell module of solar cell module |
| CN110581188A (en) * | 2018-06-08 | 2019-12-17 | 苏州阿特斯阳光电力科技有限公司 | Solar cell piece, preparation method thereof and photovoltaic module |
| CN110767761A (en) * | 2018-07-27 | 2020-02-07 | 上海理想万里晖薄膜设备有限公司 | Photovoltaic module |
| CN111200036A (en) * | 2020-01-13 | 2020-05-26 | 任建丽 | Arrangement mode of photovoltaic cells in crystalline silicon photovoltaic cell assembly |
| CN111564522A (en) * | 2019-08-27 | 2020-08-21 | 沃沛斯(常州)能源科技有限公司 | Preparation method of photovoltaic module combining P-type solar cell and N-type solar cell |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449798A (en) * | 2016-11-16 | 2017-02-22 | 南昌大学 | Double-side light-inlet crystal silicon photovoltaic module and manufacturing method thereof |
| CN110581188A (en) * | 2018-06-08 | 2019-12-17 | 苏州阿特斯阳光电力科技有限公司 | Solar cell piece, preparation method thereof and photovoltaic module |
| CN110767761A (en) * | 2018-07-27 | 2020-02-07 | 上海理想万里晖薄膜设备有限公司 | Photovoltaic module |
| CN110085695A (en) * | 2019-04-17 | 2019-08-02 | 江苏辉伦太阳能科技有限公司 | A kind of arrangement method and solar cell module of solar cell module |
| CN111564522A (en) * | 2019-08-27 | 2020-08-21 | 沃沛斯(常州)能源科技有限公司 | Preparation method of photovoltaic module combining P-type solar cell and N-type solar cell |
| CN111564522B (en) * | 2019-08-27 | 2023-10-24 | 沃沛斯(常州)能源科技有限公司 | Preparation method of photovoltaic module combining P-type solar cell and N-type solar cell |
| CN111200036A (en) * | 2020-01-13 | 2020-05-26 | 任建丽 | Arrangement mode of photovoltaic cells in crystalline silicon photovoltaic cell assembly |
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