CN106067656B - A kind of Terahertz quantum cascaded image intensifer and preparation method thereof - Google Patents
A kind of Terahertz quantum cascaded image intensifer and preparation method thereof Download PDFInfo
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- CN106067656B CN106067656B CN201610404270.8A CN201610404270A CN106067656B CN 106067656 B CN106067656 B CN 106067656B CN 201610404270 A CN201610404270 A CN 201610404270A CN 106067656 B CN106067656 B CN 106067656B
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- H—ELECTRICITY
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
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- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
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Abstract
The present invention provides a kind of Terahertz quantum cascaded image intensifer, including：Half-insulating GaAs substrate；Positioned at the GaAs buffer layers of the substrate surface；The contact layer under the N-shaped heavy doping of the buffer-layer surface；Positioned at the active area of the lower contact layer surface；The contact layer in the N-shaped heavy doping of active area upper surface；Positioned at the upper upper electrode metal layer for contacting layer surface and being separated, each upper electrode metal interlayer is equipped with the deep isolation trench of the buffer layer；And the lower electrode metal layer positioned at the lower contact layer surface and active area both sides；For the image intensifer according to each upper electrode metal layer point main waveguide segment, and positioned at main waveguide segment both ends and at least two symmetrical coupler waveguide segments, main waveguide segment and coupler waveguide segment are in a lineal layout in the horizontal direction.Image intensifer through the invention, it is discrete device to solve existing image intensifer, can not simultaneously be prepared with prime THz QCL, the problem of realizing that on piece is integrated, and also need to carry out optical alignment in use.
Description
Technical field
The present invention relates to laser semiconductor technical field, more particularly to a kind of Terahertz quantum cascaded image intensifer with
And production method.
Background technology
Terahertz (THz) wave refers to one section of electromagnetic wave that frequency is located at 100GHz to 10THz, between microwave and infrared waves it
Between.For from energy, the photon energy of THz waves covers the characteristic energy of semiconductor and plasma, also with it is organic and raw
The rotation of object macromolecular etc. and vibrational energy match, therefore can be used for the fields such as substance detection, environmental monitoring；From frequency domain
It sees, the frequency of THz waves is high, is suitable for the fields such as space secret communication and igh-speed wire-rod production line；In addition, THz wave energy enough penetrate it is more
Kind non-conducting material, such as plastics, wood, paper, also have wide practical use in the fields such as imaging and public safety.In crowd
In more THz radiation producing methods, the THz quantum cascade laser (QCL) based on semiconductor is due to its small, light, work(
Rate height and it is easy of integration the features such as, become a kind of important radiation source device in this field.
It is born from first THz QCL in 2002, under the driving of huge potential application foreground, the active area of THz QCL
It is continued to optimize with waveguiding structure, properties also constantly refresh, and current THz QCL excitation wavelengths can cover 0.84~
The frequency range of 5.0THz, output peak power is more than 1W under pulse mode, and maximum operating temperature reaches 225K.In such back of the body
Under scape, the current research hotspot in relation to THz QCL is gradually transferred to various new functions of the exploitation based on THz QCL materials
Property device, such as tunable wave length THz QCL, THz light combs.Since above-mentioned various new type functional devices are all based on THz
The waveguiding structure of QCL material systems, these devices can be mutually matched, and be expected to form what all solid state or even on piece integrated following
THz optical systems, to realizing that the miniaturization of THz optical systems has very important meaning with low-power consumption.
THz image intensifers, as its name suggests, exactly a kind of device that the THz light of prime THz QCL outputs can be amplified
Part can obtain higher Output optical power using such devices, to expanding the application range of THz QCL and accelerating THz QCL
Practicalization be of practical significance, and an indispensable part in future THz on piece integrated optics systems.However, such as Fig. 1
Shown, current Terahertz quantum cascaded image intensifer is by two ends of common Fabry-Perot (FP) chamber THz QCL
High transmittance film is grown on face to realize.Since high transmittance film growth technique needs the cleavage surface in the THz QCL of cleavage enterprising
Row, therefore, this THz quanta cascade image intensifers with high transmittance film are a kind of discrete devices, can not be same with prime THz QCL
When prepare, also can not realize that on piece is integrated with prime THz QCL.In addition, this discrete image intensifer is gone back in use
It needs to carry out accurate optical alignment, to improve beam quality and power amplification effect.
In consideration of it, it is necessary to design a kind of new Terahertz quantum cascaded image intensifer and preparation method thereof to solve on
State problem.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of Terahertz quantum cascaded light to put
Big device and preparation method thereof, is discrete device for solving existing terahertz light amplifier, can not be with prime THz QCL simultaneously
The problem of preparing, realizing that on piece is integrated, and also need to carry out optical alignment in use.
In order to achieve the above objects and other related objects, the present invention provide a kind of Terahertz quantum cascaded image intensifer and its
Production method, the Terahertz quantum cascaded image intensifer include：
Half-insulating GaAs substrate；
GaAs buffer layers positioned at the half-insulating GaAs substrate upper surface；
The contact layer under the N-shaped heavy doping of GaAs buffer layers upper surface；
The active area of contact layer upper surface under the N-shaped heavy doping；
The contact layer in the N-shaped heavy doping of the active area upper surface；
Contact layer upper surface and the upper electrode metal layer being separated in the N-shaped heavy doping, wherein respectively power on
The recessed deep isolation trench to GaAs buffer layers is equipped between the metal layer of pole；
And the lower electrode metal layer of layer surface and active area both sides is contacted under the N-shaped heavy doping；
Wherein, the Terahertz quantum cascaded image intensifer is divided into main waveguide segment according to each upper electrode metal layer, and is located at
The main waveguide segment both ends and at least two symmetrical coupler waveguide segments, the main waveguide segment and coupler waveguide segment
It is in that straight line is distributed in the horizontal direction.
Preferably, length L6 ranging from 5~15um of the deep isolation trench.
Preferably, length L1 ranging from 1~2mm of the main waveguide segment.
Preferably, the length of the coupler waveguide segment is less than the length of main waveguide segment.
Preferably, the equal length of each coupler waveguide segment.
Preferably, it designs to obtain the length of the coupler waveguide segment and deep isolation trench by transfer matrix method.
Preferably, the Terahertz quantum cascaded image intensifer includes positioned at main waveguide segment both ends and symmetrical
Four coupler waveguide segments.
Preferably, the width of the main waveguide segment and coupler waveguide segment is equal.
Preferably, the active area is bound state to continuous state transition structure, resonate phonon structure or chirp lattice structure
In one kind.
The present invention also provides a kind of systems, and the system comprises the Terahertz quantum cascaded image intensifers.
The present invention also provides a kind of production method of Terahertz quantum cascaded image intensifer, the production method includes：
S1：A half-insulating GaAs substrate is provided, molecular beam epitaxy grows GaAs successively on the half-insulating GaAs substrate
Contact layer in contact layer, active area and N-shaped heavy doping under buffer layer, N-shaped heavy doping；
S2：Contacted in the N-shaped heavy doping using photoetching, electron beam evaporation process layer surface growth be separated it is upper
Electrode metal layer, Lift-off；
S3：It is etched using etching technics as etching masking layer in surface coating photoresist where each upper electrode metal layer
Each upper electrode metal layer both sides are until contact layer, formation ridged waveguide structure remove photoetching under the exposure N-shaped heavy doping
Glue etches masking layer；
S4：Layer surface is contacted under the N-shaped heavy doping using photoetching, electron beam evaporation process and forms lower electrode metal
Layer, Lift-off；
S5：Using photoresist as etching masking layer, using dry etch process between each upper electrode metal layer
Gap performs etching, until entering GaAs buffer layers, forms deep isolation trench；
S6：Carry out high temperature rapid thermal annealing technique；
S7：Organic semiconductor device, spun gold welding and encapsulation, complete element manufacturing.
As described above, a kind of Terahertz quantum cascaded image intensifer and preparation method thereof of the present invention, has beneficial below
Effect：
1, Terahertz quantum cascaded image intensifer of the present invention in terms of material and preparation process with prime THz QCL
It exactly matches, can prepare together on the same substrate, realize that on piece is integrated, and realize autoregistration in preparation process.
2, Terahertz quantum cascaded image intensifer of the present invention is realized using coupler waveguiding structure reduces light amplification
The problem of device end face reflection rate, simple in structure effective, design is convenient.
Description of the drawings
Fig. 1 is shown as the structural schematic diagram of the Terahertz quantum cascaded image intensifer of FP chambers in the prior art.
Fig. 2 is shown as the structural schematic diagram of Terahertz quantum cascaded image intensifer described in the embodiment of the present invention one.
Fig. 3 is shown as the vertical view of Fig. 2.
Fig. 4 is shown as sectional views of the Fig. 2 along the directions AA ', and Fig. 5 is shown as sectional views of the Fig. 2 along the directions BB ', and Fig. 6 is shown as
Sectional views of the Fig. 2 along the directions CC '.
Fig. 7 is shown as answering the schematic diagram of cavity using normalized amplitude Study of Laser device.
Fig. 8~Figure 11 is shown as the structural representation in Terahertz quantum cascaded image intensifer manufacturing process described in embodiment one
Scheme (side view).
Figure 12 is shown as the structural schematic diagram of Terahertz quantum cascaded image intensifer described in the embodiment of the present invention two.
Figure 13 is shown as the Terahertz quantum cascaded light amplification of the embodiment of the present invention one, embodiment two and prior art FP chambers
Equivalent reflectivity curve graph with frequency change at device output end face.
Component label instructions
1 main waveguide segment
21 first coupler waveguide segments
22 second coupler waveguide segments
23 third coupler waveguide segments
24 the 4th coupler waveguide segments
3 deep isolation trench
4 half-insulating GaAs substrates
5 GaAs buffer layers
Contact layer under 6 N-shaped heavy doping
7 active areas
Contact layer in 8 N-shaped heavy doping
9 upper electrode metal layers
10 times electrode metal layers
S1~S7 steps 1~step 7
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this specification below by way of specific specific example
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Fig. 2 is please referred to Figure 13.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, package count when only display is with related component in the present invention rather than according to actual implementation in schema then
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can be a kind of random change, and its
Assembly layout kenel may also be increasingly complex.
As shown in Fig. 2 to Figure 12, a kind of Terahertz quantum cascaded image intensifer of present invention offer and preparation method thereof is described
Terahertz quantum cascaded image intensifer includes：
Half-insulating GaAs substrate；
GaAs buffer layers positioned at the half-insulating GaAs substrate upper surface；
The contact layer under the N-shaped heavy doping of GaAs buffer layers upper surface；
The active area of contact layer upper surface under the N-shaped heavy doping；
The contact layer in the N-shaped heavy doping of the active area upper surface；
Contact layer upper surface and the upper electrode metal layer being separated in the N-shaped heavy doping, wherein respectively power on
The recessed deep isolation trench to GaAs buffer layers is equipped between the metal layer of pole；
And the lower electrode metal layer of layer surface and active area both sides is contacted under the N-shaped heavy doping；
Wherein, the Terahertz quantum cascaded image intensifer is divided into main waveguide segment according to each upper electrode metal layer, and is located at
The main waveguide segment both ends and at least two symmetrical coupler waveguide segments, the main waveguide segment and coupler waveguide segment
It is in that straight line is distributed in the horizontal direction.
It should be noted that the deep isolation trench wall should be steep smooth as possible, in order to reduce the loss of THz light.
It should be noted that the coupler waveguide segment is located at the left and right ends, symmetrical of the main waveguide segment, and with
The main waveguide segment is in that straight line is distributed in the horizontal direction.The specially described coupler waveguide segment can be as shown in Figure 2
Positioned at the left and right ends of main waveguide segment and symmetrical the first, second coupler waveguide segment；Or as shown in figure 11, position
In the left and right ends of main waveguide segment and the first, second, third, fourth symmetrical coupler waveguide segment；Or other quantity
Positioned at the left and right ends of main waveguide segment and symmetrical coupler waveguide segment.
Specifically, the active area is bound state to continuous state transition structure, resonate phonon structure or chirp lattice structure
In one kind.
Specifically, the length range of the main waveguide segment is 1~2mm, and the equal length of each coupler waveguide segment, institute
The length for stating coupler waveguide segment is less than the length of main waveguide segment, and the length range of the deep isolation trench is 5~15um, the master
The width of waveguide segment and coupler waveguide segment is equal.
It should be noted that designing to obtain the length of the coupler waveguide segment and deep isolation trench by transfer matrix method
Degree.
The present invention also provides a kind of systems, and the system comprises Terahertz quantum cascaded image intensifers of the present invention.
The present invention also provides a kind of production method of Terahertz quantum cascaded image intensifer, the production method includes：
S1：A half-insulating GaAs substrate is provided, molecular beam epitaxy grows GaAs successively on the half-insulating GaAs substrate
Contact layer in contact layer, active area and N-shaped heavy doping under buffer layer, N-shaped heavy doping；
S2：Contacted in the N-shaped heavy doping using photoetching, electron beam evaporation process layer surface growth be separated it is upper
Electrode metal layer, Lift-off；
S3：It is etched using etching technics as etching masking layer in surface coating photoresist where each upper electrode metal layer
Each upper electrode metal layer both sides are until contact layer, formation ridged waveguide structure remove photoetching under the exposure N-shaped heavy doping
Glue etches masking layer；
S4：Layer surface is contacted under the N-shaped heavy doping using photoetching, electron beam evaporation process and forms lower electrode metal
Layer, Lift-off；
S5：Using photoresist as etching masking layer, using dry etch process between each upper electrode metal layer
Gap performs etching, until entering GaAs buffer layers, forms deep isolation trench；
S6：Carry out high temperature rapid thermal annealing technique；
S7：Organic semiconductor device, spun gold welding and encapsulation, complete element manufacturing.
Embodiment one
As shown in Figures 2 to 6, the present embodiment provides a kind of Terahertz quantum cascaded image intensifer and preparation method thereof, institutes
Stating Terahertz quantum cascaded image intensifer includes：
Half-insulating GaAs substrate；
GaAs buffer layers positioned at the half-insulating GaAs substrate upper surface；
The contact layer under the N-shaped heavy doping of GaAs buffer layers upper surface；
The active area of contact layer upper surface under the N-shaped heavy doping；
The contact layer in the N-shaped heavy doping of the active area upper surface；
Contact layer upper surface and the upper electrode metal layer being separated in the N-shaped heavy doping, wherein respectively power on
The recessed deep isolation trench to GaAs buffer layers is equipped between the metal layer of pole；
And the lower electrode metal layer of layer surface and active area both sides is contacted under the N-shaped heavy doping；
Wherein, the Terahertz quantum cascaded image intensifer is divided into main waveguide segment according to each upper electrode metal layer, and is located at
The main waveguide segment both ends and the first, second symmetrical coupler waveguide segment, the main waveguide segment and the first, second coupling
It is in that straight line is distributed to close cavity waveguide section in the horizontal direction.
Specifically, the width W1 of the main waveguide segment, the width W2 of the first coupler waveguide segment and the second coupling cavity waveguide
The width W3 of section is equal.Preferably, in the present embodiment, the W1=W2=W3=250um.
Specifically, the main waveguide segment plays amplification input THz wave under electric current injection.The main waveguide segment
Length L1 ranging from 1~2mm.Preferably, in the present embodiment, the length L1=1.27mm of the main waveguide segment.
Specifically, the first, second coupler waveguide segment is not injected into electric current, the first, second coupler waveguide segment
Equal length, and much smaller than the length of main waveguide segment, i.e. L2=L3<L1.
The first coupler waveguide segment, the second coupler waveguide segment constitute coupling cavity configuration together with main waveguide segment.Root
According to coupler theory, the length of the length and deep isolation trench that adjust each coupler waveguide segment can effectively reduce main waveguide segment two
End face equivalent reflectivity (the R of endfaceeff), have the function that with end face covering high transmittance film it is similar, to realize image intensifer
Function.
Specifically, the optimization length of coupler waveguide segment and deep isolation trench can be calculated by transfer matrix method.
It should be noted that using transfer matrix method design coupling cavity configuration THz quanta cascade image intensifers when it is main
There are two point requirements：1. reducing the end face equivalent reflectivity R of two endfaces of main waveguide segment as far as possibleeffSo that prime THz QCL
The THz light of output can enter main waveguide segment as much as possible, again can be as much as possible from master after amplifying by main waveguide segment
Waveguide segment exports, to increase the overall gain of image intensifer；2. the waveguide gain size of THz QCL materials used in main waveguide segment is with frequency
Rate and change, also varied with frequency by the calculated end face equivalent reflectivity size of transfer matrix method, when design should make master
The frequency of the gain peak of waveguide segment is matched with the frequency of end face equivalent reflectivity minimum value, to maximally utilise THz QCL
The enlarging function of material increases the overall gain of image intensifer.In the present embodiment, the gain peak of THz QCL materials used in main waveguide segment
Between 2.5~2.6THz.
It should be noted that transfer matrix method is that the axial arrangement containing countless impedance breakpoints is analyzed abbreviation as matrix phase
A kind of Mathematical method multiplied, can axial arrangement that is easy and scrupulously analyzing various various lasers.It is of the present invention
The mathematical model of transfer matrix method is summarized as follows：
When Study of Laser device answers cavity, compared just using normalized amplitude (amplitude of amplitude is the square root of power flow)
Profit.Specifically as shown in fig. 7, AjIndicate the normalized amplitude of back kick transmission of electricity magnetic wave, BjIndicate the normalization of onwards transmission electromagnetic wave
Amplitude.Derivation can obtain, and for a cellular construction, one port outputs and inputs (Aj+1And Bj+1) and another end
Mouth outputs and inputs (AjAnd Bj) between relationship can use transmission matrix TjTo indicate：
Cj=2 π njν+i(αj+gj)/2 (formula 2)
Wherein, △ ZjFor AjTo Aj+1Distance, nj、αj、gjRespectively the dielectric constant of medium j, intrinsic loss and pattern increase
Benefit.
Matrix TjDescribe the relationship output and input between two ports of a cellular construction, light amplification of the invention
Device axial arrangement is disassembled to be cascaded by said units structure one by one, thus can be successively multiplied with above-mentioned transmission matrix come
Description, i.e.,：
Then MATLAB Programming with Pascal Language is utilized to solve, you can the complete description to image intensifer of the present invention is obtained, from
And it emulates and obtains the optimization length of coupler waveguide segment and deep isolation trench.
It should be noted that by simulation result it is found that the length of the coupler waveguide segment is to end face equivalent reflectivity
(Reff) size influence it is smaller, and it is larger to the frequency influence of end face equivalent reflectivity minimum value.Moreover, coupler waveguide segment
Length it is smaller, the bandwidth of end face equivalent reflectivity frequency curve is wider, is more conducive to match with the frequency of gain peak, therefore full
The length of coupler waveguide segment should be shortened under the premise of sufficient preparation process and frequency are matched as far as possible.Preferably, in the present embodiment
In, the length L2=L3=16um of the first, second coupler waveguide segment.
It should be noted that by simulation result it is found that the length of the deep isolation trench is to the size of end face equivalent reflectivity
It is affected, and it is smaller to the frequency influence of end face equivalent reflectivity minimum value.The length of deep isolation trench is longer, ReffIt is smaller, but
More THz wave loss can be introduced simultaneously, therefore the length of setting deep isolation trench appropriate is answered in the range of preparation process allows
Degree.Ranging from 5~15um of the length L6 of the deep isolation trench.Preferably, in the present embodiment, the length of the deep isolation trench
L6=5um.
Fig. 8 to Figure 11 is please referred to below, illustrates the production method of the Terahertz quantum cascaded image intensifer.
A half-insulating GaAs substrate is provided as shown in Figure 8, and molecular beam epitaxy is given birth to successively on the half-insulating GaAs substrate
Contact layer in contact layer, active area and N-shaped heavy doping under long GaAs buffer layers, N-shaped heavy doping.
It should be noted that the active area is that bound state is brilliant to continuous state transition structure, resonance phonon structure or chirp
One kind in lattice structure.Preferably, in the present embodiment, the active area is bound state to continuous state transition structure.
As shown in figure 9, contacting layer surface growth each other in the N-shaped heavy doping using photoetching, electron beam evaporation process
The upper electrode metal layer of the main waveguide segment, the first coupler waveguide segment, the second coupler waveguide segment that separate, Lift-off.
It should be noted that the separation distance between each waveguide segment upper electrode metal layer is the deep isolation trench
Length L6.
Later, surface coating photoresist is as etching masking layer where the upper electrode metal layer in each waveguide segment, using quarter
Etching technique etches the upper electrode metal layer both sides of each waveguide segment until exposing contact layer under the type heavy doping, forms ridged
Waveguiding structure, removal photoresist etch masking layer.
As shown in Figure 10, layer surface is contacted under the N-shaped heavy doping using photoetching, electron beam evaporation process and forms lower electricity
Pole metal layer, Lift-off.
As shown in figure 11, using photoresist as etching masking layer, using dry etch process to each waveguide segment
The gap of upper electrode metal layer performs etching, until entering GaAs buffer layers, forms deep isolation trench.
Finally, high temperature rapid thermal annealing technique is carried out to above structure, then organic semiconductor device, spun gold welding and encapsulation, complete
At element manufacturing.
It should be noted that the production method of Terahertz quantum cascaded image intensifer of the present invention and prime THz QCL
Identical, prepared by the GaAs material system techniques for being all made of standard, therefore can realize and prepare together on the same substrate, realizes on piece collection
At；And the Terahertz quantum cascaded image intensifer and prime THz QCL autoregistrations can be directly realized by preparation process, it is real
Now improve beam quality and power amplification effect.
Embodiment two
As shown in figure 12, Terahertz quantum cascaded image intensifer described in the present embodiment includes：
Half-insulating GaAs substrate；
GaAs buffer layers positioned at the half-insulating GaAs substrate upper surface；
The contact layer under the N-shaped heavy doping of GaAs buffer layers upper surface；
The active area of contact layer upper surface under the N-shaped heavy doping；
The contact layer in the N-shaped heavy doping of the active area upper surface；
Contact layer upper surface and the upper electrode metal layer being separated in the N-shaped heavy doping, wherein respectively power on
The recessed deep isolation trench to GaAs buffer layers is equipped between the metal layer of pole；
And the lower electrode metal layer of layer surface and active area both sides is contacted under the N-shaped heavy doping；
Wherein, the Terahertz quantum cascaded image intensifer is divided into main waveguide segment according to each upper electrode metal layer, and is located at
The main waveguide segment both ends and the first, second, third, fourth symmetrical coupler waveguide segment, the main waveguide segment and
One, second, third and the 4th coupler waveguide segment are distributed in straight line in the horizontal direction.
It should be noted that quantity of the present embodiment by increase coupler waveguide segment, it is equivalent anti-to further decrease end face
Penetrate rate Reff。
Explanation is needed further exist for, although end face etc. can be further decreased by the quantity for increasing coupler waveguide segment
Reflectivity is imitated, but does not illustrate that the quantity of coupler waveguide segment is The more the better.The on the one hand meeting of excessive amounts of coupler waveguide segment
Introduce higher light loss, the overall gain of step-down amplifier；On the other hand the frequency characteristic that end face equivalent reflectivity can be influenced, makes
Its bandwidth narrows, and is unfavorable for matching with the frequency of gain spectral.
Specifically, ranging from 1~2mm of the length L1 of the main waveguide segment.Preferably, in the present embodiment, the master
The length L1=1.27mm of waveguide segment.
Specifically, the first, second, third, fourth coupler waveguide segment is not injected into electric current, described first, second,
Three, the equal length of the 4th coupler waveguide segment, and much smaller than the length of main waveguide segment.Preferably, in the present embodiment, described
The length L2=L3=L4=L5=18um of first, second, third, fourth coupler waveguide segment.
Specifically, ranging from 5~15um of the length L6 of the deep isolation trench.Preferably, in the present embodiment, the depth
The length L6=5um of isolation channel.
Specifically, the width W1 of the main waveguide segment, the width W2 of the first coupler waveguide segment and the second coupling cavity waveguide
The width W3 of section is equal.Preferably, in the present embodiment, the W1=W2=W3=250um.
Specifically, the gain peak of THz QCL materials is between 2.5~2.6THz used in the main waveguide segment.
Since the Terahertz quantum cascaded image intensifer described in the present embodiment is only being coupled with structure described in embodiment one
There are difference, device architecture to be substantially the same with production method and embodiment one in the quantity and length of cavity waveguide section, therefore herein not
It repeats again.
As shown in figure 13, in order to show coupling cavity configuration of the present invention to main waveguide segment end face equivalent reflectivity Reff's
It influences, three different components described in Fig. 1, Fig. 2 and Figure 12 is emulated with transfer matrix method, simulation result such as Figure 13 institutes
Show.Wherein, the length of the THz QCL of common FP chambers shown in FIG. 1 is 1.27mm.
As can be seen from Figure 13, including the Terahertz quantum cascaded image intensifer of two coupler waveguide segments 2.5~
Minimum R between 2.6THzeffBe 0.11, and include four coupler waveguide segments Terahertz quantum cascaded image intensifer 2.5~
Minimum R between 2.6THzeffIt is 0.03, is far below the R of common FP chambers THz QCLeff(about 0.32), has reached and has utilized coupling
Cavity configuration reduces the purpose of main waveguide segment end face equivalent reflectivity.
In conclusion a kind of Terahertz quantum cascaded image intensifer and preparation method thereof of the present invention, has beneficial below
Effect：
1, Terahertz quantum cascaded image intensifer of the present invention in terms of material and preparation process with prime THz QCL
It exactly matches, can prepare together on the same substrate, realize that on piece is integrated, and realize autoregistration in preparation process.
2, Terahertz quantum cascaded image intensifer of the present invention is realized using coupler waveguiding structure reduces light amplification
The problem of device end face reflection rate, simple in structure effective, design is convenient.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should by the present invention claim be covered.
Claims (11)
1. a kind of Terahertz quantum cascaded image intensifer, which is characterized in that the Terahertz quantum cascaded image intensifer includes：
Half-insulating GaAs substrate；
GaAs buffer layers positioned at the half-insulating GaAs substrate upper surface；
The contact layer under the N-shaped heavy doping of GaAs buffer layers upper surface；
The active area of contact layer upper surface under the N-shaped heavy doping；
The contact layer in the N-shaped heavy doping of the active area upper surface；
Contact layer upper surface and the upper electrode metal layer being separated in the N-shaped heavy doping, wherein each top electrode gold
It is equipped with the recessed deep isolation trench to GaAs buffer layers between category layer；
And the lower electrode metal layer of layer surface and active area both sides is contacted under the N-shaped heavy doping；
Wherein, the Terahertz quantum cascaded image intensifer is divided into main waveguide segment according to each upper electrode metal layer, and positioned at described
Main waveguide segment both ends and at least two symmetrical coupler waveguide segments, the main waveguide segment and coupler waveguide segment are in water
Square upwards in straight line be distributed.
2. Terahertz quantum cascaded image intensifer according to claim 1, which is characterized in that the length of the deep isolation trench
Ranging from 5~15 μm of L6.
3. Terahertz quantum cascaded image intensifer according to claim 1, which is characterized in that the length of the main waveguide segment
L1 ranging from 1~2mm.
4. Terahertz quantum cascaded image intensifer according to claim 1, which is characterized in that the coupler waveguide segment
Length is less than the length of main waveguide segment.
5. Terahertz quantum cascaded image intensifer according to claim 1, which is characterized in that each coupler waveguide segment
Equal length.
6. Terahertz quantum cascaded image intensifer according to claim 1, characteristic is, is designed by transfer matrix method
Obtain the length of the coupler waveguide segment and deep isolation trench.
7. Terahertz quantum cascaded image intensifer according to claim 1, which is characterized in that described Terahertz quantum cascaded
Image intensifer includes being located at the main waveguide segment both ends and four symmetrical coupler waveguide segments.
8. Terahertz quantum cascaded image intensifer according to claim 1, which is characterized in that the main waveguide segment and coupling
The width of cavity waveguide section is equal.
9. Terahertz quantum cascaded image intensifer according to claim 1, which is characterized in that the active area is bound state
To one kind in continuous state transition structure, resonance phonon structure or chirp lattice structure.
10. a kind of system, which is characterized in that the system comprises Terahertz quantums such as according to any one of claims 1 to 9
Cascade image intensifer.
11. a kind of production method of Terahertz quantum cascaded image intensifer, which is characterized in that the production method includes：
S1：A half-insulating GaAs substrate is provided, molecular beam epitaxy grows GaAs bufferings successively on the half-insulating GaAs substrate
Contact layer in contact layer, active area and N-shaped heavy doping under layer, N-shaped heavy doping；
S2：Layer surface is contacted in the N-shaped heavy doping using photoetching, electron beam evaporation process and grows the top electrode being separated
Metal layer, Lift-off；
S3：In surface coating photoresist where each upper electrode metal layer as etching masking layer, etched using etching technics described in
Each upper electrode metal layer both sides are until contact layer, formation ridged waveguide structure, removal photoresist are carved under the exposure N-shaped heavy doping
Lose masking layer；
S4：Layer surface is contacted under the N-shaped heavy doping using photoetching, electron beam evaporation process and forms lower electrode metal layer, band
Glue is removed；
S5：Using photoresist as etching masking layer, using dry etch process to the gap of each upper electrode metal layer into
Row etching forms deep isolation trench until entering GaAs buffer layers；
S6：Carry out high temperature rapid thermal annealing technique；
S7：Organic semiconductor device, spun gold welding and encapsulation, complete element manufacturing；
Wherein, the Terahertz quantum cascaded image intensifer is divided into main waveguide segment according to each upper electrode metal layer, and positioned at described
Main waveguide segment both ends and at least two symmetrical coupler waveguide segments, the main waveguide segment and coupler waveguide segment are in water
Square upwards in straight line be distributed.
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| CN106877174B (en) * | 2017-04-25 | 2019-05-10 | 中国科学院上海微系统与信息技术研究所 | Three rank distributed feed-back Terahertz quantum cascaded laser structures and preparation method thereof |
| CN107819071B (en) * | 2017-10-31 | 2020-05-05 | 山东大学 | Planar Gunn millimeter wave and terahertz power amplifier and preparation method thereof |
| CN111106526B (en) * | 2018-10-26 | 2021-10-15 | 海思光电子有限公司 | Semiconductor optical amplifier chip, optical receiving subassembly and optical module |
| CN109244822B (en) * | 2018-11-01 | 2021-01-01 | 中国科学院上海技术物理研究所 | Device and method for measuring gain of terahertz quantum cascade laser |
| CN110635353B (en) * | 2019-09-24 | 2020-08-25 | 中国科学院半导体研究所 | Terahertz semiconductor laser, and preparation method and application thereof |
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