CN105911309A - Single anchor supporting-type double axis silicon micro resonant accelerometer - Google Patents
Single anchor supporting-type double axis silicon micro resonant accelerometer Download PDFInfo
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- CN105911309A CN105911309A CN201610473126.XA CN201610473126A CN105911309A CN 105911309 A CN105911309 A CN 105911309A CN 201610473126 A CN201610473126 A CN 201610473126A CN 105911309 A CN105911309 A CN 105911309A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
Abstract
The invention discloses a single anchor supporting-type double axis silicon micro resonant accelerometer, which comprises a lower-layer glass substrate, a lead layer, a bonding layer and an upper-layer silicon structure layer, wherein the bottom layer is the glass substrate; metal is sputtered on the upper surface of the glass substrate as the lead layer; the bonding layer is arranged on the glass substrate and the lead layer, and through the bonding layer, the silicon structure layer is suspended above the glass substrate; the movable structure of the entire upper-layer silicon structure layer is supported by the only anchor; the upper-layer silicon structure layer comprises a fixed supporting frame and four upper-layer silicon micromechanical substructures, and the upper-layer silicon micromechanical substructures are arranged sequentially in a counter-clockwise direction; and the first upper-layer silicon micromechanical substructure and the third upper-layer silicon micromechanical substructure, and the second upper-layer silicon micromechanical substructure and the fourth upper-layer silicon micromechanical substructure form groups of accelerometer measurement modules respectively. Influences brought by mismatch between material properties of the substrate material and the silicon material can be effectively restrained, residual stress generated in the case of bonding and thermal stress in the case of environmental changes can be eliminated, and decoupling between two orthogonal directions is realized.
Description
Technical field
The present invention relates to MEMS (MEMS) and micro-inertia measuring technical field, specifically a kind of single anchor points support
Formula dual-axis silicon-micro resonance accelerometer.
Background technology
Since the eighties in 20th century, the development of MEMS and micro-fabrication technique has promoted micro-inertial technology and micro-used
Property instrument development, result in a new generation's accelerometer and the generation of gyroscope.Micro inertial instrument is mostly added by quasiconductor
Work technique makes, and volume is little, light weight, low in energy consumption.Employing silicon is as rapidoprint, and uses and microelectronic integrated circuit
The processing technique that manufacturing process is compatible, can be integrated in one by the sensitive gauge outfit of data processing and signal processing circuit
On chip, thus realize batch production, reduce cost.Compared with conventional inertia instrument, Mierotubule-associated proteins also has reliability
Height, measures the feature that scope is big.These features of Mierotubule-associated proteins make it have broader range of application, not only may be used
To be used in the civil areas such as automobile engineering, mobile communication, geodesic survey, geological prospecting, micro-satellite, sports equipment,
Can be applied in military field, including guided bomb, unmanned machine smart bombs etc..
Silicon micro-resonance type accelerometer is a kind of typical Micromachined Inertial Devices, and its operation principle is: the beam that shakes is by axle
During outward force effect, resonant frequency changes, and obtains the acceleration of input by the shake variable quantity of beam resonant frequency of detection
Size.Silicon micro-resonance type accelerometer output frequency signal, is a kind of quasi-digital signal, is not easily susceptible to the dry of environment noise
Disturbing, and have the highest stability, signal needs not move through A/D conversion, is directly entered digital display circuit, in transmitting procedure
It is difficult to that distortion occurs.Therefore, this sensor is easily achieved high-acruracy survey, belongs to high performance device, and it has again simultaneously
Have the various features of general data processing so that it is become a new generation High Accuracy Microcomputer tool accelerometer developing direction it
One.
At present, existing dual-axis silicon-micro resonance accelerometer is typically made up of resonator and mass and substrate of glass, and four
Individual resonator dimensions is identical, movable structure by multiple anchor points support, but owing to can not make in the course of processing
It is full symmetric that resonator is processed, and just shows especially out on the impact of device so material properties does not mate with ambient temperature.
Silicon micro-resonance type accelerometer work in-process extensively applies anchor point to be bonded, and when anchor point is bonded, ambient temperature to control
400 DEG C, structural material (silicon) and base material (glass) are heated to about 400 DEG C, owing to silicon is with the warm of glass
The coefficient of expansion and the difference of the coefficient of heat conduction, when there being multiple anchor point, material between silicon and glass between any two anchor point
Not mating of attribute, may result in silicon materials can not freely expand with heat and contract with cold, when being cooled to room temperature after structure is bonded,
Will produce bigger residual stress, residual stress can affect the steady of resonant frequency by affecting the mechanical characteristic of resonator
Qualitative；Additionally, in using environment, when the temperature is changed, due to not mating of material properties, many anchor points formula silicon is micro-humorous
Formula of shaking accelerometer also can produce thermal stress, causes the drift of resonant frequency, makes resonator have the highest temperature sensitivity,
Also the change of resonant frequency and quality factor can be caused.Therefore, suppression resonator temperature sensitivity could realize higher
Bias stability.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the present invention provides a kind of single anchor points support formula twin shaft silicon
Micro-resonance type accelerometer.
Technical scheme: for solving above-mentioned technical problem, a kind of single anchor points support formula twin shaft silicon micro-resonance type of the present invention accelerates
Degree meter, including lower floor's substrate of glass, trace layer, bonded layer and upper layer of silicon structure sheaf, bottom is substrate of glass, at glass
The upper surface splash-proofing sputtering metal of substrate, as trace layer, is provided with bonded layer in substrate of glass and trace layer, by bonded layer handle
Silicon structural layer is suspended on substrate of glass；The movable structure of whole upper layer of silicon structure sheaf is by unique anchor points support；Upper strata
Silicon micromechanical structure includes fixed support frame frame and four upper layer of silicon micromechanics minor structures, four upper layer of silicon micromechanics minor structures
It is respectively first, second, third, fourth upper layer of silicon micromechanics minor structure, first, second, third, fourth upper layer of silicon
Micromechanics minor structure is arranged in order counterclockwise；Wherein, the difference that the first, the 3rd upper layer of silicon micromechanics minor structure is formed
Separation structure constitutes first group of acceleration analysis module, the differential configuration structure that the second, the 4th upper layer of silicon micromechanics minor structure is formed
Become second group of acceleration analysis module, and the acceleration measured of described first group of acceleration analysis module and second group of acceleration
The acceleration that measurement module is measured is mutually perpendicular to.
Wherein, the movable structure of structure sheaf is only by unique anchor points support, and it is micro-that the unique anchor of movable structure is positioned at upper layer of silicon
The center of frame for movement layer, fixed support frame frame is connected with the unique anchor of movable structure, and about structure sheaf center
Rotationally symmetrical distribution.
Fixed support frame frame is the arrangement of sphere of movements for the elephants shape, and the unique anchor of movable structure is positioned at the centre bit of fixed support frame frame
Put.
Wherein, first, second, third, fourth upper layer of silicon micromechanics minor structure is rotationally symmetrical about structure centre；The first,
3rd upper layer of silicon micromechanics minor structure vertically arranges；The second, the 4th upper layer of silicon micromechanics minor structure is in the horizontal direction
Arrangement.
Wherein, upper layer of silicon micromechanics minor structure includes mass, mass support beam, primary lever enlarger and humorous
Shake device minor structure；Mass is connected with fixed support frame frame by mass support beam, described primary lever enlarger
Resonator minor structure is arranged at mass end.
Wherein, each mass is rectangle block structure, and mass support beam is divided into two groups, and one of which mass props up
Support beam is arranged on the side of mass, and another group is arranged on the opposite side of mass, and these two groups of mass support beams are closed
In mass horizontal centre axial symmetry.
Wherein, primary lever enlarger include input beam, lever arm, fulcrum beam, output beam, wherein, fulcrum beam and
Output beam is separately positioned on same one end of lever arm, and the other end of lever arm arranges input beam, and described input beam is with defeated
Go out beam and lay respectively at the both sides of lever arm, the most described fulcrum beam be in input beam and output beam between, described fulcrum beam with
Fixed support frame frame is connected；Two primary lever enlargers are connected with mass by input beam respectively, two one-level thick sticks
Bar enlarger is located on the same line and two primary lever enlargers are symmetrical arranged, and exports beam and tuning fork resonance
First contiguous block of device is connected；
Wherein, resonator minor structure includes resonator end, resonator the first contiguous block, resonator the second contiguous block, drives
Dynamic fixed fingers, drive electrode, detection fixed fingers, detecting electrode, movable comb, comb frame and two resonance beam；
Two resonance beam are arranged in parallel, and one end of two resonance beam is linked together by one end of the first contiguous block, and first
The other end of contiguous block is connected to the defeated of resonator end, the other end of resonator end and two primary lever enlargers
Going out on beam, the other end of two resonance beam is linked together by one end of the second contiguous block simultaneously, and the second contiguous block
The other end connects with fixed support frame frame；The relative outside of described two resonance beam is provided with comb frame, and movable comb
Being attached on comb frame, detection fixed fingers is attached on detecting electrode, drives fixed fingers to be attached on drive electrode,
And movable comb forms capacitor with driving fixed fingers, detection fixed fingers respectively.
Wherein, mass support beam uses folded beam form, and one end connects with mass, the other end and fixed support frame frame
Connect；And the deformation direction of described mass support beam is perpendicular with resonance beam direction of vibration.
The principle of the present invention is, silicon structural layer is made up of four part-structures being kept completely separate, all movable structures of structure sheaf
It is connected on the unique anchor point of movable structure by fixed support frame frame so that movable structure can freely shrink with swollen
Swollen, thus effectively inhibit material properties not mate brought impact, the residual stress that produces when eliminating bonding and
Thermal stress during environmental change.Four part-structures form two groups of differential configurations, wherein upper left, one group, bottom right structure measurement Y
Directional acceleration, the i.e. first upper layer of silicon micromechanics minor structure and the 3rd upper layer of silicon micromechanics minor structure, and the first upper layer of silicon is micro-
Machinery minor structure is full symmetric about upper layer of silicon micro mechanical structure central point with the 3rd upper layer of silicon micromechanics minor structure；Lower-left,
One group of structure measurement X-direction acceleration of upper right, the i.e. second upper layer of silicon micromechanics minor structure and the 4th upper layer of silicon micromechanics knot
Structure, and the second upper layer of silicon micromechanics minor structure and the 4th upper layer of silicon micromechanics minor structure are about upper layer of silicon micro mechanical structure center
Point is full symmetric.Four part-structures are kept completely separate, and the measurement of pairwise orthogonal directional acceleration does not interfere with each other, it is achieved that pairwise orthogonal
Full decoupled on direction；Often two masses in group differential configuration are kept completely separate, thus cut off two resonators and pass through
There is the passage interacted in mass, eliminates the coupling between two resonators；Every part-structure all include mass,
Primary lever enlarger, resonator, mass support beam；In every part-structure, mass is supported by four masses
Beam is connected with fixed support frame frame；Resonator is positioned at the end of mass, and one end is connected on the output beam of leverage,
The other end connects with fixed support frame frame；Two primary lever enlargers, wherein the output beam of leverage and fulcrum beam
Being positioned at the inner side of lever arm, input beam is positioned at the outside of lever arm.
When there being acceleration to input, mass changes into inertia force acceleration, and the inertia force amplified by leverage applies
On the resonator, causing a resonator resonant frequency in differential resonance device to increase, another resonator resonant frequency subtracts
Little, can be obtained by input acceleration size by the resonant frequency difference measuring two resonators.Two resonator dimensions are complete
Exactly the same, and difference layout, can effectively suppress common-mode error.
Beneficial effect: a kind of single anchor points support formula dual-axis silicon-micro resonance accelerometer of the present invention, compared to existing technology,
Have the advantages that
(1) movable structure of total layer is only connected with basal layer by bonded layer by unique anchor point, and anchor point is positioned at
The middle of structure sheaf, is connected with fixed support frame frame, and fixed support frame frame is connected with the unique anchor of movable structure, makes
Obtain movable structure can freely shrink and expand, thus effectively inhibit material properties not mate brought impact, disappear
The thermal stress when residual stress produced during except bonding and environmental change.
(2) elimination structure sheaf and base layer material attribute do not mate the impact brought is to be provided only with uniquely by movable structure
Anchor point, structure sheaf each several part realizes on the fixed support frame frame of this anchor point by being fixed on.
(3) two-part structure measuring X-direction acceleration is identical, the second upper layer of silicon micromechanics minor structure and the 4th
Upper layer of silicon micromechanics minor structure is full symmetric about upper layer of silicon micro mechanical structure central point, constitutes difference form, to temperature etc.
The response that factor causes has concordance, is conducive to eliminating common-mode error.The two-part structure measuring X-direction acceleration is complete
Full isolation, has cut off the passage that upper and lower resonator interacts, thus has eliminated the coupling between differential resonance device.
(4) two-part structure measuring Y-direction acceleration is identical, the first upper layer of silicon micromechanics minor structure and the 3rd
Upper layer of silicon micromechanics minor structure is full symmetric about upper layer of silicon micro mechanical structure central point, constitutes difference form, to temperature etc.
The response that factor causes has concordance, is conducive to eliminating common-mode error.The two-part structure measuring Y-direction acceleration is complete
Full isolation, has cut off the passage that upper and lower resonator interacts, thus has eliminated the coupling between differential resonance device.
In sum, single anchor points support formula dual-axis silicon-micro resonance accelerometer that the present invention proposes, it is possible not only to effectively press down
The material properties of base material processed and silicon materials does not mate brought impact, and the remnants produced when can eliminate bonding
Thermal stress when stress and environmental change and realize the decoupling between pairwise orthogonal direction.
Accompanying drawing explanation
Fig. 1 is present configuration schematic diagram；
Fig. 2 is the resonator structure schematic diagram of the present invention.
In figure, 1a, 1b, 1c, 1d are respectively upper left, lower-left, bottom right, upper right mass, 2a, 2b, 2c, 2d
Being respectively upper left, lower-left, bottom right, upper right resonator, 3a1,3a2,3b1,3b2,3c1,3c2,3d1,3d2 are equal
For primary lever enlarger, 4a1,4a2,4b1,4b2,4c1,4c2,4d1,4d2 are lever arm, 5a1,
5a2,5b1,5b2,5c1,5c2,5d1,5d2 are input beam, 6a1,6a2,6b1,6b2,6c1,6c2,
6d1,6d2 are fulcrum beam, and 7a1,7a2,7b1,7b2,7c1,7c2,7d1,7d2 are output beam, 8a1,
8a2,8a3,8a4,8b1,8b2,8b3,8b4,8c1,8c2,8c3,8c4,8d1,8d2,8d3,8d4 are equal
For mass support beam, 9a, 9b, 9c, 9d, 9e, 9f, 9g, 9h, 9i, 9j, 9k, 9l, 9m, 9n, 9o, 9p,
9q, 9r, 9s, 9t, 9u, 9v, 9w, 9x are fixed support frame frame, and 10 is the unique anchor of movable structure, 11a
For resonator the first contiguous block, 12a1,12a2 are resonance beam, and 13a is detecting electrode, and 14a, 15a are comb frame, 16a
For drive electrode, 17a is movable comb, and 18a is for driving fixed fingers, and 19a is detection fixed fingers, and 20a is resonance
Device end, 21a is resonator the second contiguous block.
Detailed description of the invention
Below in conjunction with the accompanying drawings the present invention is further described.
A kind of single anchor points support formula dual-axis silicon-micro resonance accelerometer of the present invention, as shown in Figure 1 and Figure 2, Yi Zhongdan
Anchor points support formula dual-axis silicon-micro resonance accelerometer, ties including lower floor's substrate of glass, trace layer, bonded layer and upper layer of silicon
Structure layer, bottom is substrate of glass, at the upper surface splash-proofing sputtering metal of substrate of glass as trace layer, at substrate of glass and lead-in wire
Layer is provided with bonded layer, by bonded layer, silicon structural layer is suspended on substrate of glass；Whole upper layer of silicon structure sheaf can
Dynamic structure is by unique anchor points support；Upper layer of silicon micro mechanical structure includes fixed support frame frame and four upper layer of silicon micromechanics
Structure, four upper layer of silicon micromechanics minor structures are respectively first, second, third, fourth upper layer of silicon micromechanics minor structure,
First, second, third, fourth upper layer of silicon micromechanics minor structure is arranged in order counterclockwise, fixed support frame frame in
Sphere of movements for the elephants shape arranges, and the unique anchor of movable structure is positioned at the center of fixed support frame frame.
Wherein, the differential configuration that the first, the 3rd upper layer of silicon micromechanics minor structure is formed constitutes first group of acceleration analysis module,
The second, the differential configuration that the 4th upper layer of silicon micromechanics minor structure is formed constitutes second group of acceleration analysis module, and described the
The acceleration of one group of acceleration analysis module measurement and the acceleration of second group of acceleration analysis module measurement are mutually perpendicular to.The
One, second, third, the 4th upper layer of silicon micromechanics minor structure rotationally symmetrical about structure centre；The first, the 3rd upper layer of silicon
Micromechanics minor structure vertically arranges；The second, the 4th upper layer of silicon micromechanics minor structure arranges in the horizontal direction.
Upper layer of silicon micromechanics minor structure include mass (1a, 1b, 1c, 1d), mass support beam (8a1,8a2,8a3,
8a4,8b1,8b2,8b3,8b4,8c1,8c2,8c3,8c4,8d1,8d2,8d3,8d4), resonator knot
Structure (2a, 2b, 2c, 2d) and primary lever enlarger (3a1,3a2,3b1,3b2,3c1,3c2,3d1,
3d2)；Described mass (1a, 1b) passes through mass support beam (8a1,8a2,8a3,8a4；8b1、8b2、8b3、
8b4) with fixed support frame frame (9a, 9b, 9c, 9d, 9e, 9f, 9g, 9h, 9i, 9j, 9k, 9l, 9m, 9n)
Be connected, described fixed support frame frame (9a, 9b, 9c, 9d, 9e, 9f, 9g, 9h, 9i, 9j, 9k, 9l, 9m,
9n) being connected with the unique anchor (10) of movable structure, described resonator minor structure (2a, 2b, 2c, 2d) is arranged
In mass (1a, 1b, 3c, 3d) end, one end and primary lever enlarger (3a1,3a2,3b1,3b2,
3c1,3c2,3d1,3d2) it is connected, the other end is connected with fixed support frame frame (9d, 9j, 9p, 9v).
As it is shown in figure 1, the first upper layer of silicon micromechanics minor structure include mass 1a, mass support beam (8a1,8a2,
8a3,8a4), resonator minor structure 2a, two primary lever enlargers (3a1,3a2)；Described mass 1a leads to
Cross mass support beam (8a1,8a2,8a3,8a4) to be connected with fixed support frame frame (9f, 9h, 9h, 9b),
Described resonator minor structure 2a is arranged at mass 1a upper end；
As it is shown in figure 1, the second upper layer of silicon micromechanics minor structure include mass 1b, mass support beam (8b1,8b2,
8b3,8b4), resonator minor structure 2b, two primary lever enlargers (3b1,3b2)；Described mass 1b leads to
Cross mass support beam (8b1,8b2,8b3,8b4) to be connected with fixed support frame frame (9g, 9l, 9n, 9n),
Described resonator minor structure 2b is arranged at mass 1b left end；
As it is shown in figure 1, the 3rd upper layer of silicon micromechanics minor structure include mass 1c, mass support beam (8c1,8c2,
8c3,8c4), resonator minor structure 2c, two primary lever enlargers (3c1,3c2)；Described mass 1c leads to
Cross mass support beam (8c1,8c2,8c3,8c4) to be connected with fixed support frame frame (9m, 9r, 9t, 9t),
Described resonator minor structure 2c is arranged at mass 1c lower end；
As it is shown in figure 1, the 4th upper layer of silicon micromechanics minor structure include mass 1d, mass support beam (8d1,8d2,
8d3,8d4), resonator minor structure 2d, two primary lever enlargers (3d1,3d2)；Described mass 1d leads to
Cross mass support beam (8d1,8d2,8d3,8d4) to be connected with fixed support frame frame (9s, 9x, 9a, 9a),
Described resonator minor structure 2d is arranged at mass 1d right-hand member；
From the foregoing, the structure of the first, second, third, fourth upper layer of silicon micromechanics minor structure of the present invention is the most identical,
Simply its arranged direction is different.As it is shown in figure 1, set up coordinate plane so that silicon microstructure layer place, upper strata plane is parallel,
The trunnion axis of upper layer of silicon microstructured layers is X-axis, and vertical axes is Y-axis,
Owing to the structure of first, second, third, fourth silicon micro mechanical minor structure is identical, therefore it may only be necessary to therein
One structure illustrates, and selects the first upper layer of silicon micromechanics minor structure to illustrate, and described mass 1a is for long
Square block structure, upper layer of silicon micromechanics minor structure includes 4 mass support beams (8a1,8a2,8a8,8a4), and
By mass support beam (8a1,8a2,8a8,8a4) by mass 1a and fixed support frame frame (9i, 9j, 9n,
9a) it is connected with each other, and the described mass support beam (8a1,8a2,8a8,8a4) of each upper layer of silicon micromechanics minor structure
Being divided into two groups, one of which mass support beam (8a1,8a4) is arranged on the side of mass 1a, and another organizes matter
Gauge block support beam (8a2,8a3) is arranged on the opposite side of mass 1a, and these two groups of mass support beams are about quality
Block horizontal centre axial symmetry.
First machinery minor structure includes harmonic oscillator structure 2a, and Fig. 2 is the schematic diagram of resonator minor structure, due to first, the
The structure of two upper layer of silicon micromechanics minor structures is the most identical, and any one first, second upper layer of silicon micromechanics the most only need to be described
The resonator minor structure of minor structure, for purposes of illustration only, the resonator minor structure to the first upper layer of silicon micromechanics minor structure
2a illustrates, and described tuning fork resonator includes resonator end 20a, resonator the first contiguous block 11a, resonator
Two contiguous block 21a, drive fixed fingers 18a, drive electrode 16a, detection fixed fingers 19a, detecting electrode 13a,
Movable comb 17a, comb frame (14a, 15a) and two resonance beam (12a1,12a2)；Two resonance beam (12a1,
12a2) arranged in parallel, and one end connection that one end of two resonance beam (12a1,12a2) is by the first contiguous block 11a
Together, and the other end of the first contiguous block 11a is connected to resonator end 20a, the other end of resonator end 20a
With on the output beam (7a1,7a2) of two primary lever enlargers (3a1,3a2), simultaneously two resonance beam (12a1,
Other end 12a2) is linked together by one end of the second contiguous block 21a, and the other end of the second contiguous block 21a with
Fixed support frame frame 9l connects；The relative outside of described two resonance beam (12a1,12a2) be provided with comb frame (14a,
15a), and movable comb 17a is attached on comb frame 14a, and detection fixed fingers 19a is attached on detecting electrode 13a,
Drive fixed fingers 18a be attached on drive electrode 16a, and movable comb 17a respectively with drive fixed fingers 18a,
Detection fixed fingers 19a forms capacitor.
Comb frame is connected with resonance beam, and movable comb additional on it forms multiple unit capacitor with fixed fingers.When driving
When applying the signal of alternating current-direct current superposition on electrode, movable comb, by electrostatic force, can drive resonance beam with natural frequency
Vibration.When there being outer acceleration, produce inertia force by mass sensitive acceleration, and amplify through leverage, make
Axial for resonance beam, resonance beam frequency of vibration changes, the capacitor that movable comb and detection fixed fingers are formed
There is corresponding change in capacitance variations frequency, this signal is converted into the change of voltage, by detecting the change of voltage
Obtain the change of acceleration.
As it is shown in figure 1, described first machinery minor structure also includes two primary lever enlargers (3a1,3a2), by
The most identical in the structure of two primary lever enlargers (3a1,3a2), simply placement direction is different, the most only needs
Bright any one, for purposes of illustration only, primary lever enlarger 3a1 is illustrated.Described primary lever amplifies
Mechanism 3a1 include input beam 5a1, lever arm 4a1, fulcrum beam 6a1, output beam 7a1, wherein, fulcrum beam 6a1 and
Output beam 7a1 is separately positioned on same one end of lever arm 4a1, and the other end of lever arm 4a1 arranges input beam 5a1,
And described input beam 5a1 lays respectively at the both sides of lever arm 4a1 with output beam 7a1, the most described fulcrum beam 6a1 is in
Between input beam 5a1 and output beam 7a1, described fulcrum beam 6a1 is connected with fixed support frame frame 9f；Two primary lever
Enlarger (3a1,3a2) is connected with mass 1a by input beam (5a1,5a2) respectively, and two primary lever are put
Great institutions (3a1,3a2) is located on the same line, and two primary lever enlarger (3a1,3a2) symmetries set
Put, and export beam (7a1,7a2) and be connected with the end 20a of tuning fork resonator；
Mass support beam (8a1,8a2,8a3,8a4) uses folded beam form, and one end connects with mass 1a, separately
One end connects with fixed support frame frame (9f, 9h, 9h, 9b)；And described mass support beam (8a1,8a2,8a3,
Deformation direction 8a4) is perpendicular with resonance beam (12a1,12a2) direction of vibration.
Operation principle of the present invention: Y-direction acceleration load transfer is become used by upper left, bottom right mass (1a, 1c)
Property power, inertia force is applied on the input beam of primary lever enlarger, through amplification after be applied on tuning fork resonator,
One under tension of two resonators, another is under pressure, and resonant frequency increases respectively and reduces, and obtains according to frequency difference
The size of X-direction acceleration load；By lower-left, upper right mass (1b, 1d) X-direction acceleration load transfer
Becoming inertia force, inertia force is applied on the input beam of primary lever enlarger, is applied to tuning fork resonator after amplifying
On, one under tension of two resonators, another is under pressure, and resonant frequency increases respectively and reduces, according to frequency difference
Obtain the size of Y-direction acceleration load.
From the foregoing, this accelerometer is hanged upper layer of silicon micro structure by bonded layer by the unique anchor 10 of movable structure
It is placed in the top of substrate of glass, it is possible to achieve structure sheaf shrinks freely and expands, and is possible not only to effectively suppress base material
Brought impact is not mated with the material properties of silicon materials, and the residual stress produced when can eliminate bonding and ring
The thermal stress during change of border.Meanwhile, the minor structure composition that four parts are kept completely separate, it is independent of each other, forms difference knot two-by-two
Structure, it is possible to realize full decoupled.Upper left, bottom right two parts form differential configuration, measure Y-direction input acceleration；
Lower-left, upper right two parts form differential configuration, measure X-direction input acceleration.
The above is only the preferred embodiment of the present invention, it should be pointed out that: for those skilled in the art
For, under the premise without departing from the principles of the invention, it is also possible to make some improvements and modifications, these improvements and modifications are also
Should be regarded as protection scope of the present invention.
Claims (9)
1. a single anchor points support formula dual-axis silicon-micro resonance accelerometer, it is characterised in that: include lower floor's substrate of glass,
Trace layer, bonded layer and upper layer of silicon structure sheaf, bottom is substrate of glass, in the upper surface splash-proofing sputtering metal conduct of substrate of glass
Trace layer, is provided with bonded layer in substrate of glass and trace layer, by bonded layer silicon structural layer be suspended in substrate of glass it
On；The movable structure of whole upper layer of silicon structure sheaf is by unique anchor points support；Upper layer of silicon micro mechanical structure includes fixing support
Framework and four upper layer of silicon micromechanics minor structures, four upper layer of silicon micromechanics minor structures are respectively first, second, third,
4th upper layer of silicon micromechanics minor structure, first, second, third, fourth upper layer of silicon micromechanics minor structure is counterclockwise
It is arranged in order；Wherein, the differential configuration that the first, the 3rd upper layer of silicon micromechanics minor structure is formed constitutes first group of acceleration and surveys
Amount module, the differential configuration that the second, the 4th upper layer of silicon micromechanics minor structure is formed constitutes second group of acceleration analysis module,
And the acceleration phase of the acceleration measured of described first group of acceleration analysis module and second group of acceleration analysis module measurement
The most vertical.
Single anchor points support formula dual-axis silicon-micro resonance accelerometer the most according to claim 1, it is characterised in that:
Wherein, the movable structure of structure sheaf is only by unique anchor points support, and the unique anchor of movable structure is positioned at upper layer of silicon micromechanics
The center of structure sheaf, fixed support frame frame is connected with the unique anchor of movable structure, and about structure sheaf central rotation
Symmetrical.
Single anchor points support formula dual-axis silicon-micro resonance accelerometer the most according to claim 2, it is characterised in that:
Fixed support frame frame is the arrangement of sphere of movements for the elephants shape, and the unique anchor of movable structure is positioned at the center of fixed support frame frame.
Single anchor points support formula dual-axis silicon-micro resonance accelerometer the most according to claim 1, it is characterised in that:
Wherein, first, second, third, fourth upper layer of silicon micromechanics minor structure is rotationally symmetrical about structure centre；The first,
Three upper layer of silicon micromechanics minor structures vertically arrange；The second, the 4th upper layer of silicon micromechanics minor structure is arranged in the horizontal direction
Row.
Single anchor points support formula dual-axis silicon-micro resonance accelerometer the most according to claim 4, it is characterised in that:
Wherein, upper layer of silicon micromechanics minor structure includes mass, mass support beam, primary lever enlarger and resonator
Minor structure；Mass is connected with fixed support frame frame by mass support beam, and described primary lever enlarger is harmonious
Device minor structure of shaking is arranged at mass end.
Single anchor points support formula dual-axis silicon-micro resonance accelerometer the most according to claim 5, it is characterised in that:
Wherein, each mass is rectangle block structure, and mass support beam is divided into two groups, one of which mass support beam
It is arranged on the side of mass, and another group is arranged on the opposite side of mass, and these two groups of mass support beams are about matter
Gauge block horizontal centre axial symmetry.
Single anchor points support formula dual-axis silicon-micro resonance accelerometer the most according to claim 5, it is characterised in that:
Wherein, primary lever enlarger includes inputting beam, lever arm, fulcrum beam, output beam, wherein, fulcrum beam and output
Beam is separately positioned on same one end of lever arm, and the other end of lever arm arranges input beam, and described input beam and output beam
Laying respectively at the both sides of lever arm, the most described fulcrum beam is between input beam and output beam, and described fulcrum beam is with fixing
Support frame is connected；Two primary lever enlargers are connected with mass by input beam respectively, and two primary lever are put
Great institutions is located on the same line and two primary lever enlargers are symmetrical arranged, and exports beam and tuning fork resonator
First contiguous block is connected.
Single anchor points support formula dual-axis silicon-micro resonance accelerometer the most according to claim 5, it is characterised in that:
Wherein, resonator minor structure includes resonator end, resonator the first contiguous block, resonator the second contiguous block, drives admittedly
Determine comb, drive electrode, detection fixed fingers, detecting electrode, movable comb, comb frame and two resonance beam；Two
Root resonance beam is arranged in parallel, and one end of two resonance beam is linked together by one end of the first contiguous block, and first connects
The other end connecing block is connected to resonator end, the other end of resonator end and the output of two primary lever enlargers
Liang Shang, the other end of two resonance beam is linked together by one end of the second contiguous block simultaneously, and the second contiguous block is another
One end connects with fixed support frame frame；The relative outside of described two resonance beam is provided with comb frame, and movable comb is attached
Being added on comb frame, detection fixed fingers is attached on detecting electrode, drives fixed fingers to be attached on drive electrode, and
Movable comb forms capacitor with driving fixed fingers, detection fixed fingers respectively.
Single anchor points support formula dual-axis silicon-micro resonance accelerometer the most according to claim 5, it is characterised in that:
Wherein, mass support beam uses folded beam form, and one end connects with mass, and the other end connects with fixed support frame frame；
And the deformation direction of described mass support beam is perpendicular with resonance beam direction of vibration.
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| CN108490216A (en) * | 2018-01-31 | 2018-09-04 | 嘉兴市纳杰微电子技术有限公司 | A kind of silicon micro-resonance type accelerometer |
| CN109613300A (en) * | 2018-12-19 | 2019-04-12 | 东南大学 | A kind of microsensor that can measure vertical direction acceleration and angular speed simultaneously |
| CN109613301A (en) * | 2018-12-19 | 2019-04-12 | 东南大学 | A kind of microsensor that can measure horizontal direction acceleration and angular speed simultaneously |
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| CN110824196B (en) * | 2019-11-18 | 2023-10-03 | 中国兵器工业集团第二一四研究所苏州研发中心 | Stress insensitive MEMS capacitive Z-axis accelerometer |
| CN111679095A (en) * | 2020-04-30 | 2020-09-18 | 东南大学 | Silicon micro-flow velocity meter with adjustable mechanical sensitivity and measuring range |
| CN111679095B (en) * | 2020-04-30 | 2022-03-11 | 东南大学 | Silicon micro-flow velocity meter with adjustable mechanical sensitivity and measuring range |
| CN111487435A (en) * | 2020-05-14 | 2020-08-04 | 东南大学 | Air flow velocity measuring device based on three working modes of weak coupling resonator group |
| CN111487435B (en) * | 2020-05-14 | 2022-03-11 | 东南大学 | Air flow velocity measuring device based on three working modes of weak coupling resonator group |
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