CN1059054C - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
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- CN1059054C CN1059054C CN94102117A CN94102117A CN1059054C CN 1059054 C CN1059054 C CN 1059054C CN 94102117 A CN94102117 A CN 94102117A CN 94102117 A CN94102117 A CN 94102117A CN 1059054 C CN1059054 C CN 1059054C
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Abstract
The present invention relates to a semiconductor device which comprises an output transistor and a temperature measurement transistor on a semiconductor substrate, wherein the output transistor is composed of a collecting area, a first base area and a first emitting area; the temperature measurement transistor is composed of a collecting area, a second base area and a second emitting area. The output transistor is positioned at the center of a collecting area of the semiconductor substrate. An unoccupied area is formed at the center of the output transistor. The temperature measurement transistor is manufactured in the unoccupied area.
Description
The present invention relates to a kind of semiconductor device, it has the function of prevention thermal breakdown, and this thermal breakdown is to be caused by the temperature rise as the semiconductor output transistor of output element.Relate to a kind of high function semiconductor device more precisely with output transistor of big electric current.
Usually; as a kind ofly having defencive function, making the semiconductor output transistor that is formed on the Semiconductor substrate exempt from the semiconductor device of puncture; known a kind of method is that a temperature sensor of being made up of thermistor is provided outside substrate near the semiconductor output transistor; come the temperature of probing semiconductor output transistor with it, when the temperature that records with box lunch reaches set point of temperature with failure of current.
Yet in above-mentioned semiconductor device,, between the temperature that the temperature and the temperature sensor of semiconductor output transistor records, just cause time lag and temperature departure because temperature sensor is positioned at outside the Semiconductor substrate.
Therefore, when output transistor had reached the dangerous temperature that may cause thermal breakdown, transducer also detected less than this dangerous temperature, thereby the semiconductor output transistor is punctured.
Fig. 8 (a) and (b) shown in, Japan specially must apply for that open communique has proposed a kind of semiconductor device 3-276636 number, wherein, output transistor 61 is positioned at one side of Semiconductor substrate 60 and its temperature detecting resistance 62 is positioned at the another side of substrate.Reference number 63 is collecting regions of output transistor 61, the 64th, and the base, the 65th, the emitter region, and 66 are electrodes of temperature detecting resistance 62.
In addition, the Japanese Patent Application Publication communique has proposed a kind of semiconductor device 1-290249 number, and its temperature element is positioned at the main heating part on the Semiconductor substrate.
In above-mentioned two kinds of devices, because temperature element is positioned on the substrate, be overcome the time lag between the temperature that the temperature of output transistor and temperature element record basically.
Yet, as described below, in above-mentioned two kinds of semiconductor device,, the semiconductor output transistor detects less than consequently breakdown this problem of output transistor is still unresolved although having reached the dangerous temperature temperature sensor.
In preceding a kind of device since output transistor on one side of Semiconductor substrate and temperature detecting resistance at another side, between the temperature that the temperature of output transistor and temperature detecting resistance record inevitably difference will appear.Whether reached dangerous temperature though utilize the method that draws the correlation between them in advance can detect output transistor, but, because defeated transistor place is that part of away from temperature element on the Semiconductor substrate, between the temperature that the actual temperature and the temperature element of output transistor records, just may cause difference.As long as there is this difference, just can't avoid the discrete of this temperature contrast.Therefore, there is following problem in preceding a kind of semiconductor device: even the semiconductor output transistor has reached dangerous temperature, temperature element still survey less than.
In a kind of semiconductor device in back, the main heating part on the Semiconductor substrate is the highest part of temperature rise in the device always not.When main heating part was positioned at the substrate center part, main heating part was the highest part of temperature rise; But when main heating part is positioned at semiconductor substrate edge, as described in Japanese Patent Application Publication communique 1-290249 number, but heat easily from the substrate main heat generating part framing penetrate and be difficult to penetrate from its central part width of cloth.Therefore, if output transistor is positioned near the core of substrate or its, though it has reached dangerous temperature, temperature element also survey less than.
The purpose of this invention is to provide a kind of semiconductor device, whether its temperature detection device probing semiconductor output transistor rapidly and has exactly reached dangerous temperature.
Semiconductor device of the present invention comprises:
A Semiconductor substrate;
Be formed on the semiconductor output transistor on the above-mentioned Semiconductor substrate, its middle body has unappropriated zone; And
A temperature element that is positioned at above-mentioned vacant zone, is used to survey above-mentioned semiconductor output transistor temperature.
In said structure, temperature element by semiconductor output transistor institute around so that its detected be the mean value of output transistor each several part temperature.Thereby the difference between the temperature that records of the temperature of output transistor and temperature element is especially little, causes the discrete very little of temperature contrast.Therefore, temperature element can detect the semiconductor output transistor exactly and whether reached dangerous temperature.
At temperature element thermometric transistor preferably of partly leading in the full device of the present invention.
As is generally known, the forward voltage V on the PN junction between transistor base and the emitter region
BEThe linear change with the temperature of PN junction, and under specified criteria V
BERatio to junction temperature is 2mV/ ℃.For example, as forward voltage V
BEDuring for 200mV, transistorized PN junction temperature is 100 ℃; Forward voltage V
BEDuring for 300mV, then junction temperature is 150 ℃.Thereby transistor can be used as temperature element reliably.
Preferably make the thermometric transistor with the transistor of a pair of compound connection.
Because Darlington has two PN junctions, so Darlington forward voltage V
BERatio to junction temperature is 4mV/ ℃.Like this, the Darlington forward voltage just is twice in single transistor with respect to variation of temperature, thereby improves the precision to the output transistor temperature detection.
In semiconductor device of the present invention, temperature element also can be a kind of thermometric diode.
As is generally known, the forward voltage V of diode PN junction
FThe linear change with the variations in temperature of PN junction, and under specified criteria forward voltage V
FRatio to the PN junction temperature is 2mV/ ℃.For example, as the forward voltage V of diode PN junction
FDuring for 300mV, junction temperature is 150 ℃; And work as V
FBe 400mV, junction temperature is 200 ℃.Thereby this diode can be used as temperature element reliably.
In semiconductor device of the present invention, temperature element can be a kind of resistance bulb.
As is generally known, the resistance of resistor with its temperature linear change.Thereby resistor can be used as temperature element reliably.
In semiconductor device of the present invention, temperature element and semiconductor output transistor are preferably in the same operation to be made.
Like this, the mutual performance of output semiconductor transistor and temperature element rises and falls just can be smaller, thereby the dispersing of difference between the temperature that output transistor temperature and temperature element record greatly reduced.
In addition, above-mentioned temperature element is a thermometric transistor preferably, the collector of above-mentioned output transistor and the transistorized collector of above-mentioned thermometric preferably are positioned at the same area, the base stage of above-mentioned output transistor preferably lays respectively at different zones with the transistorized base stage of above-mentioned thermometric, and the emitter of above-mentioned output transistor preferably also is positioned at different zones with the transistorized emitter of above-mentioned thermometric.
Can make output transistor and thermometric transistor easily, exactly like this.
Fig. 1 (a) and (b) show a kind of semiconductor device of first embodiment of the invention, wherein Fig. 1 (a) is a plane graph, Fig. 1 (b) is the profile along Fig. 1 (a) I-I.
Fig. 2 (a) and (b) show a kind of semiconductor device of second embodiment of the invention, wherein Fig. 2 (a) is a plane graph, Fig. 2 (b) is the profile along Fig. 2 (a) II-II.
Fig. 3 (a) and (b) show a kind of semiconductor device of third embodiment of the invention, wherein Fig. 3 (a) is a plane graph, Fig. 3 (b) is the profile along Fig. 3 (a) III-III.
Fig. 4 (a) and (b) show a kind of semiconductor device of fourth embodiment of the invention, wherein Fig. 4 (a) is a plane graph, Fig. 4 (b) is the profile along Fig. 4 (a) IV-IV.
Fig. 5 is a schematic diagram, shows the discrete of the first embodiment semiconductor device temperature that records, and compares with the discrete of conventional semiconductor device temperature that records.
Fig. 6 is a schematic diagram, shows the discrete of the second and the 3rd embodiment semiconductor device temperature that records, and compares with the discrete of conventional semiconductor device temperature that records.
Fig. 7 schematically shows the discrete of the 4th embodiment semiconductor device temperature that records and compares with the discrete of conventional semiconductor device temperature that records.
Fig. 8 (a) and (b) show conventional semiconductor device, wherein Fig. 8 (a) is a plane graph, Fig. 8 (b) is the profile along Fig. 8 (a) VIII-VIII.
The semiconductor device of first embodiment of the invention is below described.
Fig. 1 (a) and (b) show the semiconductor device 1 of first embodiment, wherein Fig. 1 (a) is a plane graph, during Fig. 1 (b) along the profile of Fig. 1 (a) I-I.For simplicity, omitted each electrode among Fig. 1 (a).
As Fig. 1 (a) with (b), semiconductor device 1 comprises that a collecting region 10 (being N type silicon substrate), one are formed on annular first base 11 of the middle body of collecting region 10, one and are formed on C font first emitter on first base 11, one and are formed on that among first base 11 and first emitter region 12 cube second base 13 and cuboid second emitter region 14 that is formed on second base 13 in the unoccupied district on the collecting region 10.
Lower surface at collecting region 10 is made a collector electrode 15.First base electrode 16 is positioned on first base 11.First emitter electrode 17 is positioned on first emitter region 12.Second base electrode 18 is positioned on second base 13.Second emitter electrode 19 is positioned on second emitter region 14.
Output transistor 1A as the semiconductor output element is made up of collecting region 10, first base 11 and first emitter region 12, is made up of collecting region 10, second base 13 and second emitter region 14 as the thermometric transistor 1B of temperature element.As mentioned above, thermometric transistor 1B is positioned at the middle body of the N type silicon substrate that constitutes collecting region 10, and exports brilliant part pipe 1A around thermometric transistor 1B.
The manufacture method of the semiconductor device 1 of first embodiment is discussed below.
At first, in having the N type silicon substrate (collecting region 10 of NPN transistor) of phosphorus, diffusion carries out that selectivity expands boron so that form discrete first base 11 and second base 13 mutually simultaneously.
Selectivity expands phosphorus to form first emitter region 12 and second emitter region 14 respectively in first and second bases 11 and 13 then.Then respectively on lower surface, first base 11, first emitter region 12, second base 13 and second emitter region 14 of collecting region 10, make collector electrode 15, first base electrode 16, first emitter electrode 17, second base electrode 18 and second emitter electrode 19.
Npn output transistor 1A and NPN thermometric transistor 1B just on N type silicon substrate, have been formed respectively with this method.
Explained later uses thermometric transistor 1B to survey output transistor 1A method of temperature in the semiconductor device 1 of first embodiment.
Applied voltage is about 1V between second base stage 18 of thermometric transistor 1B and second emitter 19, and when output transistor 1A runs on 40W (voltage is that 20V, electric current are that 2A, duty ratio are 50%), the forward voltage V at 14 the PN junction places in second base 13 of thermometric transistor 1B and second emitter region
BEBe 340mV.When output transistor 1A runs on 60W (voltage is that 20V, electric current are that 3A, duty ratio are 50%), V
BEBe 460mV.
On the other hand, if use thermocouple to measure the temperature of the output transistor 1A of steady operation, the output transistor temperature that then obtains the 40W operation is 230 ℃ when being 170 ℃ and 60W.
The forward voltage V at PN junction place among the thermometric crystal body pipe 1B
BE Second base stage 18 of expression thermometric transistor 1B and the voltage difference between second emitter 19, it changes with the temperature of PN junction.
Forward voltage V with temperature that draws output transistor 1A in advance and thermometric transistor 1B
BEBetween the method for correlation, can draw both corresponding relations.Like this, as long as measure among the thermometric transistor 1B forward voltage V at PN junction place between second base 13 and second emitter region 14
BE, just can easily detect the temperature of output transistor 1A.
In the semiconductor device 1 of first embodiment, because thermometric transistor 1B is produced within the output transistor 1A, this with regard to reduced by output transistor 1A different with thermometric transistor 1B position and cause record the discrete of temperature, and eliminated by the temperature of the caused output transistor 1A of distance between output transistor 1A and the thermometric transistor 1B and recorded time lag between the temperature.
Therefore, use the semiconductor device 1 of first embodiment, can improve precision and speed that output transistor 1A temperature is surveyed.
The semiconductor device of second embodiment of the invention is below described.
Fig. 2 (a) and (b) show the semiconductor device 2 of second embodiment, wherein Fig. 2 (a) is a plane graph, Fig. 2 (b) is the profile along Fig. 2 (a) II-II.For simplicity, a plurality of electrodes have been omitted among Fig. 2 (a).
As Fig. 2 (a) with (b), semiconductor device 2 comprises that a collecting region 20 (being N type silicon substrate), one are formed on the annular base 21 of collecting region 20 central authorities, one and are formed on C font emitter region 22 on the base 21, one and are formed on cube cathodic region 23 and cuboid anode region 24 that is formed on the cathodic region 23 in the unoccupied district in base 21 on the collecting region 20 and the emitter region 22.
The manufacture method of the semiconductor device 2 of second embodiment below is discussed.At first, in diffusion has the N type silicon substrate (collecting region 20 of NPN transistor) of phosphorus, carry out selectivity and expand boron so that form the base 21 and the diode cathode district 23 of NPN transistor simultaneously.
In base 21 and cathodic region 23, carry out selectivity then and expand phosphorus with the emitter region 22 that forms NPN transistor respectively and the anode region 24 of diode.Then, on lower surface, base 21, emitter region 22, cathodic region 23 and the anode region 24 of collecting region 20, make collector electrode 25, base electrode 26, emitter electrode 27, cathode electrode 28 and anode electrode 29 respectively.
Explained later uses thermometric diode 2B to survey output transistor 2A method of temperature in the second embodiment semiconductor device 2.
Applied voltage is about 1V between the negative electrode 28 of thermometric diode 2B and anode 29, and output transistor 2A is when running on 40W (voltage is 20V, and electric current is 2A, is 59%), the forward voltage V at PN junction place between the cathodic region 23 of thermometric diode 2B and the anode region 24
FBe 340mV.When output transistor 2A runs on 60W (voltage is 20V, and electric current is 3A, and duty ratio is 50%), V
FBe 460mV.
On the other hand, if use thermocouple to measure the temperature of the output transistor 2A of steady operation, the temperature that then obtains the output transistor of 40W operation is 230 ℃ when being 170 ℃ and 60W.
The forward voltage V of PN junction place among the thermometric diode 2B
FThe cathode electrode 28 of expression thermometric diode 2B and the voltage difference between the anode electrode 29, it changes with the temperature at thermometric diode 2BPN knot place.
Forward voltage V with temperature that draws output transistor 2B in advance and thermometric diode 2B
FBetween the method for correlation, can draw both corresponding relations.Like this, by measuring among the thermometric diode 2B forward voltage V at PN junction place between the cathodic region 23 and anode region 24
F, just can easily detect the temperature of output transistor 2A.
In the semiconductor device 2 of second embodiment, because thermometric diode 2B is produced within the output transistor 2A, this is the discreteness that records temperature that cause with regard to having reduced different with the thermometric diode location by output transistor 2A, and has eliminated the output transistor 2A temperature that is caused by the distance between output transistor 2A and the thermometric diode 2B and recorded time lag between the temperature.
Therefore, use the semiconductor device 2 of second embodiment, can improve precision and speed that output transistor 2A temperature is surveyed.
The semiconductor device of the third embodiment of the present invention is below described.
Fig. 3 (a) and (b) show the semiconductor device 3 of the 3rd embodiment, wherein Fig. 3 (a) is a plane graph, Fig. 3 (b) is the profile along Fig. 3 (a) III-III.For for purpose of brevity, a plurality of electrodes have been omitted among Fig. 3 (a).
As Fig. 3 (a) with (b), semiconductor device 3 comprises that a collecting region 30 (being N type silicon substrate), one are formed on the annular base 31 of collecting region 30 middle bodies, a C font emitter region 32 that is formed on the base 31, and one is formed on the collecting region 30 the H shape resistance bulb 3B (as temperature element) in the unoccupied district among the base 31 and emitter region 32.
Lower surface at collecting region 30 is made a collector electrode 33.Base electrode 34 is positioned on the base 31.Emitter electrode 35 is positioned on the emitter region 32.Thermometric electrode 36 and 37 is positioned on the resistance bulb 3B.
The manufacture method of the 3rd embodiment semiconductor device 3 below is discussed.
The N type silicon substrate (emitter region 32 of NPN transistor) that phosphorus at first, is arranged in diffusion.Then respectively on lower surface, base 31, emitter region 32 and the resistance bulb 3B of collecting region 30, make collector electrode 33, base electrode 34, emitter electrode 35 and thermometric electrode 36 and 37.
Just formed the resistance bulb 3B of output transistor 3A and NPN transistor at the bottom of the N type silicon respectively with this method.
Explained later uses resistance bulb 3B to survey output transistor 3A method of temperature in the semiconductor device 3 of the 3rd embodiment.
When output transistor 3A ran on 40W (voltage is that 20V, electric current are that 2A, duty ratio are 50%), the resistance of resistor 3B was 5000 Ω.When output transistor 3A ran on 60W (voltage is that 20V, electric current are that 3A, duty ratio are 50%), the resistance of resistor 3B was 7000 Ω.
On the other hand, if use thermocouple to measure the temperature of the output transistor 3A of steady operation, the temperature that then obtains the output transistor 3A of 40W operation is 230 ℃ when being 170 ℃ and 60W.
Because the resistance of resistance bulb 3B changes with the temperature of output transistor 3A, can draw both corresponding relations.Like this, as long as measure the resistance of resistance bulb 3B, just can easily detect the temperature of output transistor 3A.
In the semiconductor device 3 of the 3rd embodiment, because resistance bulb 3B is produced within the output transistor 3A, this with regard to reduced by output transistor 3A different with resistance bulb 3B position and cause record the discrete of temperature, and eliminated by the distance caused output transistor 3A temperature between output transistor 3A and the resistance bulb 3B and recorded time lag between the temperature.
Therefore, use the semiconductor device 3 of the 3rd embodiment, can improve precision and speed that output transistor 3A temperature is surveyed.
The semiconductor device 4 of fourth embodiment of the invention is below described.
Figure (a) and (b) show the semiconductor device 4 of the 4th embodiment, wherein Fig. 4 (a) is a plane graph, Fig. 4 (b) is the profile along Fig. 4 IV-IV.
As Fig. 4 (a) with (b), semiconductor device 4 comprises a collecting region 40 (being N type silicon substrate), a ring-shaped P that is formed on collecting region 40 middle bodies
+First base 41, a C font N who is formed on first base 41
+First emitter region 42, be formed on the collecting region 40 one second base 43 and a P in unoccupied district among first base 41
+The 3rd base 44, a N who is formed on second base 43
+Second emitter region 45 and a N who is formed on the 3rd base 44
+The 3rd emitter region 46.Raceway groove that is formed on the collecting region 40 of reference number 47 expressions stops the district among Fig. 4 (b), dielectric film of 48 expressions.
Lower surface at collecting region 40 is made a collector electrode 49.On first base 41, make one first base electrode 50.First emission electrode 51 is positioned in first emission 42.Second base stage 52 is positioned on second base 43.The 3rd emitter electrode 53 is positioned on the 3rd emitter region 46.Second emitter region 45 and the 3rd base compound connection electrode 54 of 44 usefulness are electrically connected.
Output transistor 4A as the semiconductor output element is made up of collecting region 40, first base and first emitter region 42.The first transistor 4B is made up of collecting region 40, second base 43 and second emitter region 45.Transistor seconds 4C is made up of collecting region 40, the 3rd base 44 and the 3rd emitter region 46.The thermometric transistor is by compound continuous the first transistor 4B and transistor seconds 4C form each other.As mentioned above, compound each other continuous transistor 4B and 4C are positioned at the central authorities of the N type silicon substrate of forming collecting region 40, and output transistor 4A is around compound continuous transistor 4B and 4C.
The manufacture method of the semiconductor device 4 of the 4th embodiment below is discussed.
At first, in having the N type silicon substrate (will become the collecting region 40 of NPN transistor) of phosphorus, diffusion carries out the boron selective diffusion to form discrete first base 41, second base 43 and the 3rd base 44 mutually simultaneously.
Then, selectivity expands phosphorus to form first emitter region 42, second emitter region 45 and the 3rd emitter region 46 respectively in first, second and the 3rd base 41,43 and 44, then respectively on lower surface, first base 41, first emitter region 42, second base 43 and the 3rd emitter region 46 of collecting region 40, make collector electrode 49, first base electrode 50, first emitter electrode 51, second base electrode 52 and the 3rd emitter electrode 53.Between the 3rd base 44 and second emitter region 45, make compound connection electrode 54 again.
Npn output transistor 4A and NPN first and second transistor 4B and the 4C just on N type silicon substrate, have been formed respectively with this method.
Discuss to assessing the compare test that the 4th embodiment semiconductor device 4 carries out below.
As the output transistor in the 4th embodiment semiconductor device 4 and Fig. 8 (a) with the output transistor in the conventional semiconductor device (b) when all running on 40W (voltage is that 20V, electric current are that 2A, duty ratio are 50%) and 60W (voltage is that 20V, electric current are that 3A, duty ratio are 50%), measured the forward voltage V at each thermometric transistor PN junction place
BEUnder the output transistor steady operation situation in each semiconductor device, also measure with thermocouple.Corresponding measurement result is shown in table 1.
The transistorized V of table 1 operation thermometric
BEWith 230 ℃ of 170 ℃ of 60W 920mV of actual temperature 40W 680mV (170 ℃) 300mV (150 ℃) (230 ℃) 400mV (200 ℃) of temperature output transistor electric current the 4th embodiment routine
As seen from Table 1, than conventional semiconductor device, the semiconductor of the 4th embodiment can be measured the temperature of output transistor more accurately.
Fig. 5 shows the discrete comparison that records temperature in the discrete and conventional semiconductor device that records temperature in the semiconductor device of first and second embodiment, and the latter uses one to be positioned at thermistor outside the Semiconductor substrate as temperature sensor.Wherein, the semiconductor device of first and second embodiment and the conventional semiconductor temperature that is used to same audio system and output transistor is set at 210 ℃.
In Fig. 5, P is illustrated in the distribution that records temperature in the semiconductor device of first and second embodiment, and Q is illustrated in the distribution that records temperature in the conventional semiconductor device.As shown in Figure 5, in first and second embodiment, record the discrete of temperature significantly less than recording the discrete of temperature in the conventional semiconductor device.
Fig. 6 shows the discrete comparison that records temperature in the discrete and conventional semiconductor device that records temperature in the 3rd embodiment semiconductor device.Wherein the 3rd embodiment semiconductor device and the conventional semiconductor device temperature that is used to same audio system and output transistor is set at 210 ℃.
As shown in Figure 6, the discrete range that records temperature in the 3rd embodiment semiconductor device is littler than what record in the conventional semiconductor device, but it is like that little to be not so good as first and second embodiment.
Fig. 7 shows and records the discrete of temperature and record the discrete comparison of temperature at conventional semiconductor device in the 4th embodiment semiconductor device.Wherein, the 4th embodiment semiconductor device and conventional semiconductor device are used to be set at 210 ℃ with the temperature of audio system one by one and output transistor.
As shown in Figure 7, what record temperature in the semiconductor device of the 4th embodiment is discrete significantly less than recording the discrete of temperature in the conventional semiconductor device, but also less than the result who records among first and second embodiment.
Even under normal operation, audio system all is added with high voltage usually, so that comes compared with the semiconductor device in other system, it is high that the temperature of the semiconductor device in the audio system is all wanted.This means that audio system usually can be owing to semiconductor device breaks down.In audio system, adopt semiconductor device of the present invention, can reduce the frequency that audio system breaks down.
In first to fourth embodiment, all use the single transistor that is formed on the Semiconductor substrate as output transistor.Yet, do not adopt single transistor and adopt the Darlington that is formed on the substrate as output transistor, also can obtain equal effect.
Claims (9)
1, a kind of semiconductor body, it comprises:
A Semiconductor substrate;
Be formed on the semiconductor output transistor that a unoccupied zone is also partly arranged on the above-mentioned Semiconductor substrate in the central; And
A temperature element that is positioned at above-mentioned unoccupied zone, is used for surveying above-mentioned semiconductor output transistor temperature.
2, semiconductor device according to claim 1, wherein said semiconductor output transistor is positioned at the middle body of above-mentioned Semiconductor substrate.
3, semiconductor device according to claim 1, wherein said temperature element is positioned at the middle body of described Semiconductor substrate.
4, semiconductor device according to claim 1, wherein said temperature element are a kind of thermometric transistors.
5, semiconductor device according to claim 4, wherein said thermometric transistor are the transistors of a pair of compound connection each other.
6, semiconductor device according to claim 1, wherein said temperature element are a kind of thermometric diodes.
7, semiconductor device according to claim 1, wherein said temperature element are a kind of temperature detecting resistances.
8, semiconductor device according to claim 1, wherein said temperature element and above-mentioned semiconductor output transistor form in same operation.
9, semiconductor device according to claim 8, wherein said temperature element is a kind of thermometric transistor, the collector of above-mentioned output transistor and the transistorized collector of above-mentioned thermometric are formed at the same area, the base stage of above-mentioned output transistor is respectively formed at different zones with the transistorized base stage of above-mentioned thermometric, and the emitter of above-mentioned output transistor is respectively formed at different zones with the transistorized emitter of above-mentioned thermometric.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN94102117A CN1059054C (en) | 1994-02-07 | 1994-02-07 | Semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN94102117A CN1059054C (en) | 1994-02-07 | 1994-02-07 | Semiconductor device |
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| CN1106572A CN1106572A (en) | 1995-08-09 |
| CN1059054C true CN1059054C (en) | 2000-11-29 |
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| CN94102117A Expired - Fee Related CN1059054C (en) | 1994-02-07 | 1994-02-07 | Semiconductor device |
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| US10637460B2 (en) | 2016-06-14 | 2020-04-28 | Macom Technology Solutions Holdings, Inc. | Circuits and operating methods thereof for monitoring and protecting a device |
| US20180109228A1 (en) | 2016-10-14 | 2018-04-19 | MACOM Technology Solution Holdings, Inc. | Phase shifters for gallium nitride amplifiers and related methods |
| US20190028066A1 (en) | 2017-07-24 | 2019-01-24 | Macom Technology Solutions Holdings, Inc. | Fet operational temperature determination by field plate resistance thermometry |
| US20190028065A1 (en) | 2017-07-24 | 2019-01-24 | Macom Technology Solutions Holdings, Inc. | Fet operational temperature determination by gate structure resistance thermometry |
| US20190078941A1 (en) * | 2017-09-14 | 2019-03-14 | Macom Technology Solutions Holdings, Inc. | Operational temperature determination in bipolar transistors by resistance thermometry |
| JP2020102581A (en) * | 2018-12-25 | 2020-07-02 | 株式会社村田製作所 | Bipolar transistor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01290249A (en) * | 1988-05-18 | 1989-11-22 | Mitsubishi Electric Corp | Thermally protecting circuit of semiconductor integrated circuit device |
| JPH03276636A (en) * | 1990-03-26 | 1991-12-06 | Matsushita Electron Corp | Semiconductor device |
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- 1994-02-07 CN CN94102117A patent/CN1059054C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01290249A (en) * | 1988-05-18 | 1989-11-22 | Mitsubishi Electric Corp | Thermally protecting circuit of semiconductor integrated circuit device |
| JPH03276636A (en) * | 1990-03-26 | 1991-12-06 | Matsushita Electron Corp | Semiconductor device |
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