CN105897208A - High-gain, self-bias and no-inductor low-noise amplifier - Google Patents

High-gain, self-bias and no-inductor low-noise amplifier Download PDF

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Publication number
CN105897208A
CN105897208A CN201610211871.7A CN201610211871A CN105897208A CN 105897208 A CN105897208 A CN 105897208A CN 201610211871 A CN201610211871 A CN 201610211871A CN 105897208 A CN105897208 A CN 105897208A
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type transistor
noise amplifier
low
bias
gain
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CN201610211871.7A
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CN105897208B (en
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赵寅升
沈剑均
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Jiangsu Xingyu Xinlian Electronic Technology Co Ltd
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Jiangsu Xingyu Xinlian Electronic Technology Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers without distortion of the input signal
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

The present invention discloses a high-gain, self-bias and no-inductor low-noise amplifier. The high-gain, self-bias and no-inductor low-noise amplifier comprises a low-noise amplifier circuit composed of a common source amplification level and a source follower load level, and a self-bias feedforward network composed of a DC bias resistor and a feedforward capacitor. The high-gain, self-bias and no-inductor low-noise amplifier of the present invention reduces the noise on the condition of keeping the constant low power consumption by utilizing a gain enhancement technology and based on a conventional low-noise amplifier, thereby improving the sensitivity of a chip. Meanwhile, the high-gain, self-bias and no-inductor low-noise amplifier of the present invention selects a self-bias structure and adopts the no-inductor design, so that the layout area is reduced while the circuit design is simplified, and accordingly, the cost of the chip is reduced.

Description

A kind of noninductive low-noise amplifier of high-gain automatic biasing
Technical field
The present invention relates to low-noise amplifier technical field, specifically a kind of noninductive low-noise amplifier of high-gain automatic biasing.
Background technology
Receiver circuit is the Key Circuit that reception processes radiofrequency signal, and it is widely used in the fields such as wireless telecommunications, satellite navigation. The low-power consumption of receiver chip, high sensitivity and miniaturization are industrial quarters and the direction of academia research and development, and low noise amplification Device, as the first order circuit of receiver link, assume responsibility for important effect, and input small-signal is amplified by low-noise amplifier The noise overcoming receiver link subsequent conditioning circuit to produce, is the Important Circuit directly affecting receiver channel sensitivity.Low noise The noise of amplifier can reduce by increasing electric current, but the low-power consumption of receiver chip have to realize, therefore in dimension Hold low-power consumption constant in the case of, reduce noise, simplify structure and reduce chip area, be that of low-noise amplifier sends out Exhibition direction.
Traditional low-noise amplifier, can effectively realize in the case of introducing relatively low noise, be amplified input signal Process.But for highly sensitive application, in the case of maintaining low-power consumption constant, need to reduce to greatest extent amplification The noise introduced in processing procedure.
Summary of the invention
It is an object of the invention to provide a kind of noninductive low-noise amplifier of high-gain automatic biasing, it is therefore an objective to based on tradition low noise Acoustic amplifier, in the case of keeping power consumption constant, reduces noise, simplifies circuit structure and reduce chip area, thus carrying The sensitivity of high chip also reduces the cost of chip.
The purpose of the present invention is achieved through the following technical solutions:
A kind of noninductive low-noise amplifier of high-gain automatic biasing, the input signal of described low-noise amplifier is VIN, output letter Number it is Vout；Described low-noise amplifier includes the first electric capacity C1, the second electric capacity C2, the first resistance R1, the second resistance R2, the 3rd Resistance R3, the first P-type transistor MP1, the first N-type transistor MN1, wherein:
First electric capacity C1Positive input terminal and negative input end respectively with input signal VINWith the first N-type transistor MN1Grid be connected；
Second electric capacity C2Positive input terminal and negative input end respectively with input signal VINWith the first P-type transistor MP1Grid be connected；
First resistance R1Positive input terminal and negative input end respectively with the first N-type transistor MN1Grid and DC offset voltage VB It is connected；
Second resistance R2Positive input terminal and negative input end respectively with the first P-type transistor MP1Grid and output signal VoutIt is connected；
3rd resistance R3Positive input terminal and negative input end respectively with the first P-type transistor MP1Grid be connected to the ground；
First N-type transistor MN1Source electrode be connected to the ground, the first P-type transistor MP1Source electrode be connected with power supply, the first N-type Transistor MN1Drain electrode and the first P-type transistor MP1Drain electrode all with output signal VoutIt is connected.
Beneficial effects of the present invention:
(1) the noninductive low-noise amplifier of high-gain automatic biasing of the present invention is in the case of keeping power consumption constant, passes through gain Enhancement techniques, it is achieved that relatively low noise coefficient.
(2) the noninductive low-noise amplifier of high-gain automatic biasing of the present invention, realizes automatic biasing by resistance pressure-dividing network, from And simplify circuit structure.
(3) the noninductive low-noise amplifier of high-gain automatic biasing of the present invention eliminates inductive load, thus effectively reduces domain Area.
Accompanying drawing explanation
Fig. 1 is the amplifier circuit in low noise figure of invention；
Fig. 2 is the noise coefficient Bode diagram of the low-noise amplifier of invention.
Detailed description of the invention
Below in conjunction with specific embodiment, the invention will be further described.
A kind of noninductive low-noise amplifier of high-gain automatic biasing of the present invention includes that one is born by common source amplifier stage and source follower Carry the amplifier circuit in low noise of level composition, and an automatic biasing feedforward network being made up of direct current biasing resistance and feed-forward capacitance.
Concrete, as it is shown in figure 1, the input signal of low-noise amplifier is VIN, output signal is Vout；Described low noise amplification Device includes the first electric capacity C1, the second electric capacity C2, the first resistance R1, the second resistance R2, the 3rd resistance R3, the first P-type transistor MP1, the first N-type transistor MN1, wherein: the first electric capacity C1Positive input terminal and negative input end respectively with input signal VINWith One N-type transistor MN1Grid be connected；Second electric capacity C2Positive input terminal and negative input end respectively with input signal VINWith first P-type transistor MP1Grid be connected；First resistance R1Positive input terminal and negative input end respectively with the first N-type transistor MN1's Grid and DC offset voltage VBIt is connected；Second resistance R2Positive input terminal and negative input end respectively with the first P-type transistor MP1 Grid and output signal VoutIt is connected；3rd resistance R3Positive input terminal and negative input end respectively with the first P-type transistor MP1 Grid be connected to the ground；First N-type transistor MN1Source electrode be connected to the ground, the first P-type transistor MP1Source electrode and power supply phase Even, the first N-type transistor MN1Drain electrode and the first P-type transistor MP1Drain electrode all with output signal VoutIt is connected.
Principle analysis:
The enhancing of gain is by the first P-type transistor MP1With the second electric capacity C2Realize, custom low noise amplifier, signal Only through the first electric capacity C1And by the first N-type transistor MN1Being amplified, gain only has gM, MN1*(ron,MN1//ron,MP1), wherein gM, MN1It it is the first N-type transistor MN1Mutual conductance, ron,MN1It it is the first N-type transistor MN1Output impedance, ron,MP1It is a P Transistor npn npn MP1Output impedance；And the noninductive low-noise amplifier of high-gain automatic biasing of the present invention, signal is respectively through One electric capacity C1With the second electric capacity C2, and respectively by the first N-type transistor MN1With the first P-type transistor MP1It is amplified, increases Benefit increases to (gm,MN1+gm,MP1)*(ron,MN1//ron,MP1), wherein gM, MN1It it is the first N-type transistor MN1Mutual conductance, gm,MP1It is a P Transistor npn npn MP1Mutual conductance, ron,MN1It it is the first N-type transistor MN1Output impedance, ron,MP1It is the first P-type transistor MP1's Output impedance；The increase of gain directly reduces input reference noise so that the noise coefficient of low-noise amplifier is keeping power consumption Being improved in the case of constant, the noise coefficient Bode diagram after improvement is as shown in Figure 2.
Automatic biasing is by the second resistance R2With the 3rd resistance R3Realize, the second resistance R2With the 3rd resistance R3The dividing potential drop net formed Network, by the first P-type transistor MP1The DC voltage of drain electrode and grid clamp down on respectively at Vout,DCWith (Vout,DC*R3)/(R2+R3), from And realize automatic biasing, save outer for bias voltage, simplify circuit.
Above example is merely to illustrate technical scheme, rather than limiting the scope of the invention, although with reference to relatively The present invention has been made to explain by good embodiment, it will be understood by those within the art that, can be to the technology of the present invention Scheme is modified or equivalent, without deviating from the spirit and scope of technical solution of the present invention.

Claims (1)

1. the noninductive low-noise amplifier of high-gain automatic biasing, it is characterised in that the input signal of described low-noise amplifier is VIN, output signal is Vout；Described low-noise amplifier includes the first electric capacity C1, the second electric capacity C2, the first resistance R1, second electricity Resistance R2, the 3rd resistance R3, the first P-type transistor MP1, the first N-type transistor MN1, wherein:
First electric capacity C1Positive input terminal and negative input end respectively with input signal VINWith the first N-type transistor MN1Grid be connected；
Second electric capacity C2Positive input terminal and negative input end respectively with input signal VINWith the first P-type transistor MP1Grid be connected；
First resistance R1Positive input terminal and negative input end respectively with the first N-type transistor MN1Grid and DC offset voltage VB It is connected；
Second resistance R2Positive input terminal and negative input end respectively with the first P-type transistor MP1Grid and output signal VoutIt is connected；
3rd resistance R3Positive input terminal and negative input end respectively with the first P-type transistor MP1Grid be connected to the ground；
First N-type transistor MN1Source electrode be connected to the ground, the first P-type transistor MP1Source electrode be connected with power supply, the first N-type Transistor MN1Drain electrode and the first P-type transistor MP1Drain electrode all with output signal VoutIt is connected.
CN201610211871.7A 2016-04-06 2016-04-06 A kind of noninductive low-noise amplifier of high-gain automatic biasing Active CN105897208B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112352405A (en) * 2018-05-30 2021-02-09 Macom技术解决方案控股公司 AC coupling topology based on integrated circuit
CN117134725A (en) * 2023-10-26 2023-11-28 爱科微半导体(上海)有限公司 Broadband single-ended to differential low-noise amplifier and radio frequency receiver

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040075494A1 (en) * 2002-10-17 2004-04-22 Armin Klomsdorf Power amplification circuit and method for supplying power at a plurality of desired power output levels
CN101911476A (en) * 2007-11-29 2010-12-08 高通股份有限公司 High-linearity complementary amplifier
CN103633947A (en) * 2013-12-03 2014-03-12 天津大学 Noninductive and high-gain CMOS (Complementary Metal Oxide Semiconductor) broadband low-noise amplifier
CN105375890A (en) * 2014-08-20 2016-03-02 中芯国际集成电路制造(上海)有限公司 Low-noise amplifier
CN205566238U (en) * 2016-04-06 2016-09-07 江苏星宇芯联电子科技有限公司 High -gain auto bias does not have low -noise amplifier of inductance

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040075494A1 (en) * 2002-10-17 2004-04-22 Armin Klomsdorf Power amplification circuit and method for supplying power at a plurality of desired power output levels
CN101911476A (en) * 2007-11-29 2010-12-08 高通股份有限公司 High-linearity complementary amplifier
CN103633947A (en) * 2013-12-03 2014-03-12 天津大学 Noninductive and high-gain CMOS (Complementary Metal Oxide Semiconductor) broadband low-noise amplifier
CN105375890A (en) * 2014-08-20 2016-03-02 中芯国际集成电路制造(上海)有限公司 Low-noise amplifier
CN205566238U (en) * 2016-04-06 2016-09-07 江苏星宇芯联电子科技有限公司 High -gain auto bias does not have low -noise amplifier of inductance

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112352405A (en) * 2018-05-30 2021-02-09 Macom技术解决方案控股公司 AC coupling topology based on integrated circuit
CN117134725A (en) * 2023-10-26 2023-11-28 爱科微半导体(上海)有限公司 Broadband single-ended to differential low-noise amplifier and radio frequency receiver

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Denomination of invention: A high gain self biased inductance free low noise amplifier

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