CN105845618A - Method for preventing copper oxidation diffusion - Google Patents
Method for preventing copper oxidation diffusion Download PDFInfo
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- CN105845618A CN105845618A CN201510016588.4A CN201510016588A CN105845618A CN 105845618 A CN105845618 A CN 105845618A CN 201510016588 A CN201510016588 A CN 201510016588A CN 105845618 A CN105845618 A CN 105845618A
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- semiconductor device
- diffused
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- glue
- polysilicon
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Abstract
The invention provides a method for preventing copper oxidation diffusion, and the method comprises the steps: firstly providing a semiconductor device which at least comprises a substrate and a copper metal layer manufactured on the surface of the substrate, and washing the surface of the semiconductor device; secondly dripping acetone onto the surface of the semiconductor device, laying polycrystalline silicon glue on the surface of acetone, enabling the polycrystalline silicon glue to be closely attached to the copper metal layer through the acetone, enabling the copper metal layer to be isolated from the atmosphere, and preventing the copper oxidation diffusion. According to the invention, the polycrystalline silicon glue can be closely attached to the surface of the copper metal layer through the acetone, thereby effectively preventing the oxidation diffusion of copper. Moreover, there is no need to consider the Q-time impact in a technological process, thereby guaranteeing the high-efficiency utilization of a machine platform and manpower. The method cannot introduce foreign matters, does not cause pollution, is simple and convenient for operation, and is suitable for industrial production.
Description
Technical field
The present invention relates to semiconductor process technique field, particularly relate to a kind of method preventing copper oxide-diffused.
Background technology
Along with individual devices becomes more and more less, the speed of service of integrated circuit is more and more higher.Under the speed of hundreds of megahertz,
Signal just must can prevent program to be delayed with sufficiently fast speed by metal system.The delay of metal connecting line to be improved can use
The relatively low metal of resistance value is as plain conductor or reduces the parasitic capacitance of dielectric layer between plain conductor.Copper wiring is a solution
Postponing the feasible program of effect, compared with the resistance of aluminum 3.1m Ω/cm, the resistance of copper only has 1.7m Ω/cm, and electric conductivity is more excellent than aluminum
Good, copper itself has deelectric transferred ability simultaneously, and can be deposited at low temperatures.
It is well known that, copper the most easily aoxidizes, and the copper after oxidation has the strongest diffusibility, after copper diffusion, can make
Becoming the fracture of metal, and the bridge joint of metal, thus cause the inefficacy of chip, yield significantly reduces.In order to prevent copper from aoxidizing
Diffusion, either in chip manufacturing process or during the failure analysis of chip, all can extreme care, general use quickening to process
The mode carried out, reduces the method for copper open-assembly time in atmosphere as far as possible and solves.Technical process such as can strictly control copper
Chemically mechanical polishing (CMP) and stop-layer (Stop layer) deposit waiting time between twice technique (Queue time,
Q-time), must ensure within 2 hours；Chip failure analysis then can be after being ground to copper lines, at once by sample
Preventing from observing in SEM or FIB instrument, the midfeather time was not over 3 minutes.If beyond the time limit, will produce
The pig copper spreads, and causes wafer loss or copper defect to be destroyed, it is impossible to reason finding chip failure etc..
Due to the restriction of time interval in technique and operating process, some inconvenience can be produced, cause manpower and the board cannot be efficient
Be utilized, add that interval time needs artificial control, once neglect, will result in serious problem.
Therefore it provides a kind of practicable method being used for preventing copper oxide-diffused is the class that those skilled in the art need to solve
Topic.
Summary of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of method preventing copper oxide-diffused, uses
It is susceptible to the problem that oxide-diffused causes chip failure in solving copper in prior art.
For achieving the above object and other relevant purposes, the present invention provides a kind of method preventing copper oxide-diffused, and described method is extremely
Comprise the following steps less:
1) providing semiconductor device, described semiconductor device at least includes substrate and is produced on the copper metal layer of described substrate surface,
Clean the surface of described semiconductor device；
2) drip acetone at described semiconductor device surface, and stick glue at acetone surface tiling polysilicon, will by described acetone
Polysilicon sticks glue to be close to copper metal layer, makes copper metal layer and atmospheric isolation, prevents copper oxide-diffused.
Prevent the scheme of a kind of optimization of the method for copper oxide-diffused, described step 1 as the present invention) in cleaning process be:
First carry out deionized water rinsing, then use deionized water to carry out supersonic oscillations, finally by nitrogen gun by semiconductor device surface
Dry up.
Prevent the scheme of a kind of optimization of the method for copper oxide-diffused as the present invention, when cleaning described semiconductor device, ultrasound wave shakes
The time swung is 1～2 minute.
Prevent the scheme of a kind of optimization of the method for copper oxide-diffused, described step 2 as the present invention) in dropping acetone after, use
Nitrogen gun blows acetone, prevents the bubble in acetone from resting on the follow-up polysilicon spread and sticks in glue.
Prevent the scheme of a kind of optimization of the method for copper oxide-diffused as the present invention, described polysilicon sticks the thickness range of glue and is
0.09～0.12mm.
Prevent the scheme of a kind of optimization of the method for copper oxide-diffused as the present invention, described polysilicon sticks glue and extends quasiconductor
The distance on surface 1～3cm.
The scheme of a kind of optimization of the method for copper oxide-diffused is prevented, when described semiconductor device needs to carry out next as the present invention
When step process or operation, described polysilicon being sticked glue and is separately from the semiconductor device, the process of separation is: use Infrared irradiation
Described semiconductor device, makes acetone volatilize by the heat effect of infrared light, and polysilicon sticks glue and comes off from semiconductor device surface.
The temperature range of described Infrared irradiation is 40 DEG C～80 DEG C, and the time range of irradiation is 4～6 minutes.
Prevent the scheme of a kind of optimization of the method for copper oxide-diffused as the present invention, described substrate is silicon substrate or SOI.
As it has been described above, the method preventing copper oxide-diffused of the present invention, described method includes step: first, it is provided that semiconductor device
Part, described semiconductor device at least includes substrate and is produced on the copper metal layer of described substrate surface, cleaning described semiconductor device
Surface；Then drip acetone at described semiconductor device surface, and stick glue, by described at acetone surface tiling polysilicon
Polysilicon is sticked glue by acetone to be close to copper metal layer, makes copper metal layer and atmospheric isolation, prevents copper oxide-diffused.The present invention is led to
Cross acetone polysilicon can stick glue closely stick in copper metal layer surface, effectively prevent copper generation oxide-diffused, thus in work
The impact of Q-time need not be considered, it is ensured that board and the efficient utilization of manpower during skill.The method will not introduce impurity, without dirty
Dye, and simple to operation, it is adaptable to industrialized production.
Accompanying drawing explanation
The semiconductor device structure schematic diagram that Fig. 1 provides for the present invention.
Fig. 2 is the structural representation that the present invention drips acetone on the semiconductor device.
Fig. 3 present invention sticks the structural representation of glue at semiconductor device surface tiling polysilicon.
Fig. 4 is the initial pattern micrograph of copper metal layer.
Fig. 5 is that any micrograph processed after placing two hours is not made on copper metal layer surface.
Fig. 6 is through the micrograph of five days after the disposal methods copper metal layer using the present invention.
Element numbers explanation
1 substrate
2 copper metal layers
3 acetone
4 polysilicons stick glue
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art can be by disclosed by this specification
Content understand other advantages and effect of the present invention easily.The present invention can also be added by the most different detailed description of the invention
To implement or application, the every details in this specification can also be based on different viewpoints and application, in the essence without departing from the present invention
Various modification or change is carried out under god.
Refer to accompanying drawing.It should be noted that the diagram provided in the present embodiment illustrates that the present invention's is basic the most in a schematic way
Conception, the most graphic in component count, shape and size time only display with relevant assembly in the present invention rather than is implemented according to reality
Drawing, during its actual enforcement, the kenel of each assembly, quantity and ratio can be a kind of random change, and its assembly layout kenel is also
It is likely more complexity.
The present invention provides a kind of method preventing copper oxide-diffused, and the method at least includes following two steps:
First, as shown in Figure 1, it is provided that semiconductor device, described semiconductor device at least includes substrate 1 and is produced on described lining
The pending copper metal layer 2 on surface, the end 1, cleans the surface of described semiconductor device.
Described substrate 1 can be silicon substrate or SOI, does not limits at this.In the present embodiment, described substrate is chosen as silicon substrate.
It should be noted that described copper metal layer 2 is more metal layers, need to carry out processing is copper metal layer 2 table of top layer
Face, includes passivation layer and device layer between substrate 1 and copper metal layer 2, between copper metal layer 2.
Damage in order to avoid the follow-up polysilicon being sticked is sticked glue by the particulate matter of semiconductor device surface, semiconductor device
The cleanliness factor on surface wants height, and the cleaning way typically used is: first uses deionized water irrigation instrument, then surpasses with deionized water
Sonication cleans, and the surface of semiconductor device is dried up by last nitrogen gun.Supersonic oscillations time general control was at 1～2 minute
In the range of.Clean surface can ensure that to stick in the middle of after polysilicon sticks glue and remains without air.
Refer to Fig. 2 and Fig. 3, behind cleaned pending copper metal layer 2 surface, drip third at described semiconductor device surface
Ketone 3, and stick glue 4 at acetone 3 surface tiling polysilicon, by described acetone 3, polysilicon sticked glue 4 and copper metal layer 2
It is close to, makes copper metal layer 2 and atmospheric isolation, prevent copper oxide-diffused.
It should be noted that when dripping acetone 3, need, by the weak gas flow of nitrogen gun, the bubble in acetone to be blown away, prevents
These bubbles are stayed the follow-up polysilicon spread and are sticked in glue 4, cause copper metal layer 2 to aoxidize.Acetone is liquid, as long as just
Cover device surface, it is not necessary to the thickest, otherwise can destroy the structure to polycrystalline silica gel.
Also, it should be noted when pasting described polysilicon and sticking glue 4, glue can be sticked by certain dynamics pressure, it is ensured that polysilicon
Stick glue 4 surfacing, it is to avoid fold, prevent gas leakage.Polysilicon sticks the thickness of glue and is about 0.1mm.Shearing can be used
Mode first polysilicon sticked glue be cut into suitable shape, general polysilicon sticks after glue 4 is attached to device surface, can extend
Go out semiconductor device surface about 1～the distance of 3cm.In the present embodiment, polysilicon sticks glue and stretches out device edge 2cm, it is simple to many
Crystal silicon glue paste operation.
It itself is colorless and odorless transparent solid that polysilicon sticks glue 4, and stability is high, it is easy to preserve, and consistency is high, and insulating is good,
Waterproof airtight, but polysilicon sticks glue itself and does not has stickiness, if adding acetone 3, then can merge with acetone 3,
It is changed into sticky glue, polysilicon can be made to stick glue 4 by means of stickiness and attach to the surface of samples devices, and polysilicon sticks
Glue 4 merges completely with acetone 3, it is ensured that polysilicon sticks glue 4 and closely binds with device surface, prevents air from entering, copper
Metal cannot aoxidize and spread, even if device is put in air for a long time, also can retain its complete pattern.And acetone
3 the best cleaning agent, will not react with copper metal layer 2, will not damage device and pollute.
When we need observing samples, it is judged that when whether sample lost efficacy, need that sample is sticked with polysilicon glue 4 and separate.Separate
Mode be: semiconductor device sample to be separated is placed under infrared light and irradiates about 5 minutes, by the heat effect of infrared light
Making acetone 3 volatilize, polysilicon sticks glue 4 and comes off from semiconductor device surface.
Infrared light can generate heat, and temperature controls at 40 DEG C～80 DEG C, and this temperature be enough to make acetone volatilize, but will not destroy sample
The character of material own, and the penetrance of infrared light is poor, will not penetrate copper metal layer and damage the device of bottom, safety
Feasible, effect is notable.After being separated by infrared light, sample surfaces does not have acetone or polysilicon sticks the residual of glue,
Ensure the clean free from admixture of sample surfaces, can directly be observed.
It is illustrated in figure 4 the initial pattern of the copper metal layer of acquisition, it can be seen that the copper metal layer of acquisition is placed directly on scanning
Observe under ultramicroscope (SEM), do not occur copper to spread.Fig. 5 is to be left intact by the copper metal layer initially obtained
Place microscopic appearance figure after two hours in atmosphere, it is found that sample is simply placed in air two hours, and copper is
Serious diffusion occurs, and the white particle on surface is the copper of oxide-diffused.Fig. 6 be through the method for the present invention process after five days micro-
See shape appearance figure, it can be seen that although sample has been placed five days, but copper shows no sign of occurring the sign of diffusion, as excellent as before.
The processing method of the present invention can not only be effectively used in the Sample Preparation Procedure of failure analysis (FA), method is simple,
Cheap, it is also possible in the technique preparation process of device, such as, after per pass copper CMP technique, use polysilicon
Stick glue to tile device surface, before depositing to lower one stop-layer (stop layer), make polysilicon stick with Infrared irradiation
Glue and device isolation, so can control Q-time again, it is possible to efficiently utilizes board and manpower, promotes output capacity, increases
Interest rate.
In sum, the present invention provides a kind of method preventing copper oxide-diffused, and described method includes step: first, it is provided that half
Conductor device, described semiconductor device at least includes substrate and be produced on the copper metal layer of described substrate surface, cleans and described partly leads
The surface of body device；Then drip acetone at described semiconductor device surface, and stick glue at acetone surface tiling polysilicon, logical
Cross described acetone polysilicon is sticked glue to be close to copper metal layer, make copper metal layer and atmospheric isolation, prevent copper oxide-diffused.This
Polysilicon can be sticked glue by acetone and closely stick in copper metal layer surface by invention, effectively prevents copper generation oxide-diffused, from
And the impact of Q-time need not be considered in technical process, it is ensured that board and the efficient utilization of manpower.The method will not introduce impurity,
Pollution-free and simple to operation, it is adaptable to industrialized production.
So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.Any it is familiar with this skill
Above-described embodiment all can be modified under the spirit and the scope of the present invention or change by the personage of art.Therefore, such as
All that in art, tool usually intellectual is completed under without departing from disclosed spirit and technological thought etc.
Effect is modified or changes, and must be contained by the claim of the present invention.
Claims (9)
1. the method preventing copper oxide-diffused, it is characterised in that described method at least includes step:
1) providing semiconductor device, described semiconductor device at least includes substrate and is produced on the copper metal of described substrate surface
Layer, cleans the surface of described semiconductor device；
2) drip acetone at described semiconductor device surface, and stick glue, by described third at acetone surface tiling polysilicon
Polysilicon is sticked glue by ketone to be close to copper metal layer, makes copper metal layer and atmospheric isolation, prevents copper oxide-diffused.
The method preventing copper oxide-diffused the most according to claim 1, it is characterised in that: described step 1) in cleaning process
For: first carry out deionized water rinsing, then use deionized water to carry out supersonic oscillations, finally by nitrogen gun by semiconductor device
Part surface dries up.
The method preventing copper oxide-diffused the most according to claim 2, it is characterised in that: clean during described semiconductor device ultrasonic
The time of ripple vibration is 1～2 minute.
The method preventing copper oxide-diffused the most according to claim 1, it is characterised in that: described step 2) in dropping acetone after,
Blow acetone by nitrogen gun, prevent the bubble in acetone from resting on the follow-up polysilicon spread and stick in glue.
The method preventing copper oxide-diffused the most according to claim 1, it is characterised in that: described polysilicon sticks the thickness model of glue
Enclose is 0.09～0.12mm.
The method preventing copper oxide-diffused the most according to claim 1, it is characterised in that: described polysilicon sticks glue and extends half
The distance of conductive surface 1～3cm.
The method preventing copper oxide-diffused the most according to claim 1, it is characterised in that: when described semiconductor device needs to carry out
When next step technique or operation, described polysilicon being sticked glue and is separately from the semiconductor device, the process of separation is: use infrared
Light irradiates described semiconductor device, makes acetone volatilize by the heat effect of infrared light, and polysilicon sticks glue from semiconductor device table
Emaciated face falls.
The method preventing copper oxide-diffused the most according to claim 7, it is characterised in that: the temperature range of described Infrared irradiation
Being 40 DEG C～80 DEG C, the time range of irradiation is 4～6 minutes.
The method preventing copper oxide-diffused the most according to claim 1, it is characterised in that: described substrate is silicon substrate or SOI.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510016588.4A CN105845618B (en) | 2015-01-13 | 2015-01-13 | A method of preventing copper oxidized diffusion |
Applications Claiming Priority (1)
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|---|---|---|---|
| CN201510016588.4A CN105845618B (en) | 2015-01-13 | 2015-01-13 | A method of preventing copper oxidized diffusion |
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| CN105845618A true CN105845618A (en) | 2016-08-10 |
| CN105845618B CN105845618B (en) | 2019-07-19 |
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2015
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| CN1767179A (en) * | 2004-09-14 | 2006-05-03 | 株式会社半导体能源研究所 | Wireless chip and manufacturing method of the same |
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| CN102741983A (en) * | 2010-08-06 | 2012-10-17 | 日东电工株式会社 | Electronic component manufacturing method |
| CN103779255A (en) * | 2012-10-25 | 2014-05-07 | 罗门哈斯电子材料有限公司 | Temporary wafer bonding |
| CN103776668A (en) * | 2012-10-26 | 2014-05-07 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of active region failure analysis sample of semiconductor device |
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