CN105829916A - Radiation detection apparatus, radiation detection system, and radiation detection apparatus manufacturing method - Google Patents
Radiation detection apparatus, radiation detection system, and radiation detection apparatus manufacturing method Download PDFInfo
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- CN105829916A CN105829916A CN201480068223.XA CN201480068223A CN105829916A CN 105829916 A CN105829916 A CN 105829916A CN 201480068223 A CN201480068223 A CN 201480068223A CN 105829916 A CN105829916 A CN 105829916A
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- 230000005855 radiation Effects 0.000 title claims abstract description 69
- 238000001514 detection method Methods 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 12
- 239000002585 base Substances 0.000 description 98
- 239000000463 material Substances 0.000 description 15
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005992 thermoplastic resin Polymers 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
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- 239000006260 foam Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- -1 such as Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NELOASAWODGZEB-UHFFFAOYSA-N [Gd].[Tb].O=S Chemical compound [Gd].[Tb].O=S NELOASAWODGZEB-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- 230000005250 beta ray Effects 0.000 description 1
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
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- 229920005680 ethylene-methyl methacrylate copolymer Polymers 0.000 description 1
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- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20185—Coupling means between the photodiode and the scintillator, e.g. optical couplings using adhesives with wavelength-shifting fibres
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
- A61B6/46—Arrangements for interfacing with the operator or the patient
- A61B6/461—Displaying means of special interest
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
- A61B6/48—Diagnostic techniques
- A61B6/486—Diagnostic techniques involving generating temporal series of image data
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2002—Optical details, e.g. reflecting or diffusing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
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Abstract
Provided is a radiation detection apparatus wherein a bonding failure between end portions of a plurality of sensor substrates and a bonding member is suppressed. This radiation detection apparatus has: a plurality of sensor substrates, which are disposed adjacent to each other, and each of which has a side surface that connects a first surface and a second surface facing the first surface, said first surface having a plurality of photoelectric conversion elements disposed thereon in an array; a scintillator that is disposed on the first surface side of the sensor substrates; and a sheet-like bonding member for bonding the sensor substrates and the scintillator to each other. Between the sensor substrates, the bonding member is bonded to at least a part of the first surface and a part of the side surface such that the bonding member is continuously bonded over at least a part of the side surface from the first surface.
Description
Technical field
The present invention relates to the radiation detecting apparatus of detection radiation, use the radiation detection system of radiation detecting apparatus and for the method manufacturing radiation detecting apparatus.
Background technology
For radiation detecting apparatus, can use so-called indirect conversion radiation detecting apparatus, it includes array being provided with the sensor base of multiple photo-electric conversion element and converting radiation into the scintillator of the light that can be detected by photo-electric conversion element.
Having large-area radiation detecting apparatus to provide, PTL1 discloses a kind of radiation detecting apparatus, and plurality of sensor base is adjacent to arrange each other, and scintillator is arranged to extend above in the plurality of sensor base.PTL1 discloses a kind of radiation detecting apparatus, and wherein said multiple sensor base and scintillator are adhered to each other by bonding part.
Reference listing
Patent documentation
PTL1: Japanese Patent Publication No.2012-007948
Summary of the invention
Technical problem
But, in the radiation detecting apparatus described in PTL1, still there is space to consider the bonding strength of the bonding part being positioned between the plurality of sensor base.When the bonding part being positioned between the plurality of sensor base peels off from the plurality of sensor base due to such as variations in temperature and vibration, between the end section of bonding part and the plurality of sensor base, it is likely to be formed gap.Light is occurred to travel to the state difference of sensor base from scintillator in gap and bonding part.These differences may cause producing artifact from the image that the plurality of sensor base obtains.
The solution of problem
Therefore, the present invention provides a kind of radiation detecting apparatus, and wherein the defect bonding between the end section of bonding part and multiple sensor base reduces.
Radiation detecting apparatus according to the present invention includes: be adjacent to the multiple sensor base arranged each other, and each sensor base includes array is provided with the first surface of the multiple photo-electric conversion element second surface relative with first surface and side surface first surface and second surface being connected to each other；It is arranged in the scintillator at the first surface side of the plurality of sensor base；And for the plurality of sensor base and scintillator being adhered to lamellar bonding part each other, wherein, between the plurality of sensor base, lamellar bonding part is adhered at least some of of first surface and side surface so that lamellar bonding part extend from first surface and be adhered to continuously side surface described at least partially.
The method being used for manufacturing radiation detecting apparatus according to the present invention includes: scintillator is arranged in the deposition step at the first surface side of multiple sensor base, lamellar bonding part is between scintillator and first surface side, the plurality of sensor base is adjacent to arrange each other, and each sensor base includes array being provided with the first surface of the multiple photo-electric conversion element second surface relative with first surface and first surface and second surface being connected to side surface each other；With
By from the region corresponding with the region between the plurality of sensor base in contrast to the side of the plurality of sensor base extruding scintillator so that at least one of adhesion step of side surface that lamellar bonding part extends from first surface and is adhered to continuously between the plurality of sensor base.
Accompanying drawing explanation
Fig. 1 is for describing the schematic plan view of radiation detecting apparatus, schematic cross sectional views and amplifying schematic cross sectional views.
Fig. 2 is the schematic cross sectional views for describing the method for manufacturing radiation detecting apparatus.
Fig. 3 is the schematic cross sectional views for describing the radiation detecting apparatus according to different embodiments.
Fig. 4 is for describing the schematic cross sectional views of the radiation detecting apparatus according to different embodiments and amplifying schematic cross sectional views.
Fig. 5 is the schematic cross sectional views of the radiation detecting apparatus according to different embodiments.
Fig. 6 is the concept map of the exemplary application of the radiation detection system using radiation detecting apparatus.
Detailed description of the invention
Describe in detail according to the embodiment of the present invention below with reference to view.In various embodiments, corresponding component is given identical reference, and will not provide the explanation identical to it.In the present invention, light includes visible ray and infrared light, and radiation includes X-ray, alpha ray, β ray and gamma-rays.
First, by utilizing Fig. 1 (a) to describe the exemplary overall structure of the radiation detecting apparatus 100 according to an embodiment to 1 (c).Fig. 1 (a) is the schematic plan view for describing radiation detecting apparatus 100.Fig. 1 (b) is the schematic cross sectional views of the cross section structure at the part of the A-A' being described in along Fig. 1 (a).Fig. 1 (c) is the amplification schematic cross sectional views of the region B in Fig. 1 (b).
As shown in Fig. 1 (a) to 1 (c), include multiple sensor base 112, scintillator 120 and bonding part 130 according to the radiation detecting apparatus 100 of embodiment.Each including in the plurality of sensor base 112 is provided with the second surface 112b relative with first surface 112a for first surface 112a of multiple photo-electric conversion element 115 with array and first surface 112a and second surface 112b is connected to side surface 112c each other.The plurality of sensor base 112 is adjacent to arrange each other.Scintillator 120 is arranged at the first surface side of the plurality of sensor base 112.The plurality of sensor base 112 and scintillator 120 are adhered to each other at the first surface side of the plurality of sensor base 112 by bonding part 130.At this, between the plurality of sensor base 112, lamellar bonding part 130 is adhered at least some of of side surface 112c and first surface 112a, so that lamellar bonding part 130 extends from first surface 112a and is adhered at least some of of side surface 112c continuously.In other words, the plurality of sensor base 112 and scintillator 120 are adhered to each other by bonding part 130, and are arranged to extend to side surface 112c at least some of of sensor base 112 from first surface 112a.By this bonding, even if changing due to temperature load and oscillatory load in bonding part 130, bonding part 130 bonds relative to the defect of the plurality of sensor base 112 and also reduces.Additionally, the appearance in the gap between bonding part 130 and the plurality of sensor base 112 reduces, thus the appearance of the image artifacts thus caused reduces.
At each sensor base 112, the plurality of photo-electric conversion element 115 is arranged at first surface 112a with array.In embodiments, for each sensor base 112, using the monocrystal silicon substrate manufactured from silicon single crystal wafer, photodiode is used as each photo-electric conversion element 115.The multiple switching device (not shown) corresponding with the plurality of photo-electric conversion element 115 may be provided at each sensor base 112.It is not only restricted to substrate described above according to sensor of the invention substrate 112.Can use and be provided with TFT pixel and MIS sensor or the sensor base of PIN sensor, described sensor utilizes and is such as deposited on the non-crystalline silicon on insulation board.Other CCD or SOI (silicon-on-insulator) sensor can be used.Each sensor base 112 according to embodiment also includes retaining ring 118, passivating film 116 and overcoat 117.Retaining ring 118 is the conductor being provided for preventing the electrostatic damage to photo-electric conversion element 115.Each retaining ring 118 along the plurality of photo-electric conversion element 115 periphery be arranged in corresponding first surface 112a at least some of on.Each passivating film 116 is the dielectric film covering photo-electric conversion element 115.For each passivating film 116, it is adapted in use to inorganic insulating membrane, such as, silicon oxide film or silicon nitride film.Each passivating film 116 covers a part and the plurality of photo-electric conversion element 115 of retaining ring 118.Each overcoat 117 is for protecting photo-electric conversion element 115 and corresponding passivating film 116 thereof not by the layer of such as external impact.For each overcoat 117, it is suitably used organic insulator, such as, polyimide layer.Each overcoat 117 covers its corresponding passivating film 116, in addition to the end section of its corresponding passivating film 116.
X-ray is converted into the light with the wavelength that can be detected by the photo-electric conversion element 115 of sensor base 112 by scintillator 120, and described X-ray is the radiation ray transmitted through test object.Scintillator 120 according to embodiment includes basic material 121, scintillator layers 122 and scintillator overcoat 123.Although such as a-C, Al or resin can be used for basic material 121, but the Al that rigidity is lower than a-C can be suitably used.Scintillator layers 122 is that X-ray is converted into the layer of light, and described light has the wavelength that can be detected by photo-electric conversion element 115.For scintillator layers 122, GOS or CsI:Tl can be used.GOS is Gd2O2S:Tb (mixes terbium gadolinium oxysulfide), and is granule scintillator material.CsI:Tl has the feature of scintillator based on alkali halide, and is cesium iodide,crystal, and includes the scintillator material including column crystal.Scintillator overcoat 123 is that protection scintillator layers 122 is not by external humidification and the layer of external impact.For scintillator overcoat 123, organic resin, such as, Parylene resin or thermoplastic resin can be suitably used.In order to simplify Fig. 1 (b), not shown overcoat 123.
The plurality of sensor base 112 and scintillator 120 are adhered to each other at the first surface side of the plurality of sensor base 112 by bonding part 130.Here, between the plurality of sensor base 112, bonding part 130 is adhered at least some of of side surface 112c and first surface 112a, so that bonding part 130 extends from first surface 112a and is adhered at least some of of side surface 112c continuously.In embodiments, between the plurality of sensor base 112, bonding part 130 overcoat 117, passivating film 116, retaining ring 118, the first surface 112a of sensor base 112 and sensor base 112 side surface 112c at least some of on extend and bond continuously.By this way, by making lamellar bonding part 130 extend in the structure have step-like surface and bond continuously, bonding part 130 is more suitably adhered to sensor base 112.For bonding part 130, it is suitably used the material with the high light transmittance relative to the light changed by scintillator 122.Such as, sheet component, such as, acrylic resin sheet, silicone sheet or thermoplastic resin sheet can be suitably used.Desirably, bonding part 130 comprises organic resin, when the peeling angle being consistent with JISZ0237 is 180 degree, organic resin is 10N/25mm or bigger relative to the bonding strength of glass, organic resin is 90% or bigger relative to the transmittance of the maximum emission wavelength of scintillator, and the thickness of organic resin is to 50 μm from 1 μm.
Base portion 111 is the parts of the plurality of sensor base of mechanical support 112.For base portion 111, being suitably used such as substrate of glass or the base portion of SUS substrate, described base portion has rigidity more higher than the rigidity of basic material 121 and scintillator layers 122.Fixed component 113 is the sticking parts of tool for the plurality of sensor base 112 is fixed to base portion 111.For fixed component 113, the material identical with the material for bonding part 130 can be used.Patch panel 114 is the patch panel for transmitting signal between external circuit (not shown) and sensor base 112.For patch panel 114, flexible printed circuit board can be used.
It follows that by utilize Fig. 2 (a) to 2 (c) describe according to this embodiment for the method manufacturing radiation detecting apparatus 100.Fig. 2 (a) is the schematic cross sectional views for being described in the cross section structure before the adhesion step at the part corresponding with the part of the A-A' along Fig. 1 (a).Fig. 2 (b) is the schematic cross sectional views describing Exemplary adhesive step.Fig. 2 (c) is the schematic cross sectional views for describing another exemplary adhesion step.In order to simplify Fig. 2 (a) to 2 (c), not shown overcoat 123.
First, as shown in Fig. 2 (a), utilizing fixed component 113 that the second surface 112b of the plurality of sensor base 112 is fixed to the fixing step of base portion 111 by execution, the plurality of sensor base 112 is arranged on base portion 111.By the scintillator 120 including the scintillator layers 122 being arranged on basic material 121 is arranged in the deposition step (bonding part 130 is between scintillator and first surface side) at the first surface side of the plurality of sensor base 112, scintillator layers 122 is arranged on the surface 112a of the plurality of sensor base 112.
It follows that as shown in Fig. 2 (b), the region corresponding with the region between the plurality of sensor base 112 of scintillator 120 is extruded from contrast to the side of the plurality of sensor base 112.In method shown in Fig. 2 (b), rotational roller 150 is from the side linear extrusion bonding part 130 opposed with sensor base 112 in contrast to the edge, side of the plurality of sensor base 112.By this way, by extruding the region corresponding with the region between the plurality of sensor base 112 of scintillator 120, the region of the part being positioned between the plurality of sensor base 112 of bonding part 130 is also adhered to the region of the part of the side surface 112c of sensor base 112.It is desirable that, the pressure produced by roller 150 is more than or equal to 0.4MPa.
As shown in Fig. 2 (c), when thermoplastic resin is used as bonding part 130, the region corresponding with the region between the plurality of sensor base 112 of scintillator 120 can be extruded from contrast to the described side of the plurality of sensor base 112 by utilizing the adjustable pressure texture of temperature 151.When thermoplastic resin is heated to the temperature more than or equal to fusion temperature by pressure texture 151, and when being extruded under the pressure more than or equal to 0.4MPa, the region of the part being positioned between the plurality of sensor base 112 of bonding part 130 is also adhered to the region of the part of the side surface 112c of sensor base 112.
The side surface 112c of the plurality of sensor base 112 can have the various structures of the bonding strength for increasing bonding part 130.Figure 3 illustrates for increasing the example arrangement of the bonding strength of bonding part 130.Fig. 3 is the schematic cross sectional views for describing the example arrangement amplifying the bonding strength increasing bonding part 130 in cross section structure for the region B in Fig. 1 (b).In the example shown in fig. 3, the turning of the surface 112a and side surface 112c that can form sensor base 112 is removed, so that the 3rd surface 112d being not parallel to first surface 112a and side surface 112c is arranged between the first surface 112a of sensor base 112 and side surface 112c.Bonding part 130 extends from first surface 112a between the plurality of sensor base 112 and is adhered at least some of of side surface 112c and the 3rd surface 112d continuously.Due to this structure, bonding part 130 can cover the part until side surface 112c the most continuously.By increasing bond area, the bonding strength of bonding part 130 also increases.
Fig. 4 (a) and 4 (b) all illustrate the different example arrangement of the bonding strength for increasing bonding part 130.Fig. 4 (a) is the schematic cross sectional views of the cross section structure of the different example arrangement for describing the bonding strength increasing bonding part 130 at the part at the A-A' along Fig. 1 (a).Fig. 4 (b) is the amplification schematic cross sectional views of the region C in Fig. 4 (a).In order to simplify Fig. 4 (a), not shown overcoat 123.In the different example arrangement shown in Fig. 4 (a) and 4 (b), the plurality of sensor base 112 at least one side surface 112c tilt.Tilt the inner side towards sensor base 112 and be at an angle of D extension towards second surface 112b relative to the vertical line being perpendicular to first surface 112a from first surface 112a.Arranging the structure tilted with described angle D between the plurality of sensor base 112 so that this structure is such structure, wherein bonding part 130 is not easy at least some of peeling from side surface 112c compared with the structure in Fig. 1 (c).It is desirable that, angle D is from 0.2 degree to 5 degree.
It is desirable that, the rigidity of fixed component 113 is less than the rigidity of bonding part 130.By utilizing Fig. 5 (a) and 5 (b), the radiation detecting apparatus utilizing more preferably fixed component 113 is described.Fig. 5 (a) is schematic cross sectional views, for describing the cross section structure utilizing the more preferably radiation detecting apparatus of fixed component 113.Fig. 5 (b) is schematic cross sectional views, is used for describing more preferably fixed component 113.As shown in Fig. 5 (a), owing to the rigidity of fixed component 113 is less than the rigidity of bonding part 130, even if producing the stress caused by the difference between variations in temperature and thermal coefficient of expansion, fixed component 113 also absorbs this stress.Therefore, the stress being applied to bonding part 130 reduces, and the bubble invading bonding part 130 owing to bonding part 130 peels off from the first surface 112a of the plurality of sensor base 112 reduces.As preferable fixed component 113, as shown in Fig. 5 (b), available lamellar fixed component 113, it includes the telescopic material 161 clamped by bonding part 160.The polyolefin-based foam of lamellar is used as telescopic material 161, and bubble 162 is comprised in telescopic material 161.As bonding part 160, such as, use lamellar acrylic acid bonding part or the silica-based bonding part of lamellar.
Radiation detecting apparatus described above may be used on the radiation detection system that figure 6 illustrates.Fig. 6 illustrates that embodiment as described above utilizes the exemplary application of the removable radiation detection system of radiation detecting apparatus.
Fig. 6 is the concept map of the radiation detection system utilizing the transportable radiation detecting apparatus that can shoot movement/rest image.In figure 6, reference 115 represents the display that can show the picture signal obtained from the radiation detecting apparatus 100 according to embodiment, and reference 903 represents the bed for placing test object 904.Reference 902 represents the car allowing radiation generator 110, radiation detecting apparatus 100 and C-arm 901 to move；Reference 905 represents removable control device, and it has the permission controlled structure of apparatus above.C-arm 901 keeps radiation generator 110 and radiation detecting apparatus 100.Control device 905 to include controlling computer 108, control panel 114 and irradiation controller 109.The picture signal obtained by radiation detecting apparatus 100 can be by image procossing and be transferred to such as display equipment 115.The view data produced by image procossing by controlling device 905 can be sent to a distant place by the conveyer of such as telephone wire.This can carry out diagnostic image based on the view data of transmission for doctor in the distance.The data image of transmission can be recorded on film or on the memorizer of such as CD, store the data image of transmission.However, it is possible to be formed as radiation detecting apparatus 100 can be removed from C-arm 901, and the radiation generator different from radiation generator 110 is used to shoot at C-arm 901.
The example utilizing certain material is below described.For example, the result of durability test described below is good.Durability test is for confirming the test of image by radiation being applied to radiation detecting apparatus after vibrating with preset frequency and acceleration of gravity 2G at the scintillator 120 arranged that faces down.
(example 1)
For each sensor base 112, using monocrystal silicon substrate, it has the thickness of 500 μm and is provided with the multiple photodiodes arranged with array on first surface 112a.Scintillator 120 includes having the Al base portion 121 of 300 μ m thick, have the CsI:Tl scintillator layers 122 of 800 μ m thick and have the Parylene scintillator overcoat 123 of 25 μ m thick.Each sensor base 112 is fixed to base portion 11 by the fixed component 113 utilizing telescopic material 161, and described base portion is the substrate of glass with 1.8mm thickness, and telescopic material is the polyolefin-based foam with 1.5mm thickness.There are 25 μ m thick and utilize the bonding part 130 of acrylic resin to be arranged between the first surface 112a of scintillator 120 and the plurality of sensor base 112.As shown in Fig. 2 (b), by utilizing rotational roller 150 with the pressure extrusion bonding part 130 of 0.4MPa, bonding part 130 bonding is until with first surface 112a side at a distance of the position of 5 μm on the side surface 112c of sensor base 112.
(example 2)
Use sensor base 112, scintillator 120 and the fixed component 113 being similar to according to example 1.Having 25 μ m thick and utilize the bonding part 130 of thermoplastic resin to be arranged between the first surface 112a of scintillator 120 and the plurality of sensor base 112, the main component of thermoplastic resin is ethylenemethylmethacrylate copolymer.As shown in Fig. 2 (c), the pressure texture 151 of 100 to 120 DEG C of temperature it is heated to by utilization, bonding part 130 is extruded under the pressure of 0.4MPa so that bonding part 130 bonding is until with first surface 112a side at a distance of the position of 50 μm on the side surface 112c of sensor base 112.
(example 3)
Use scintillator 120, bonding part 130 and the fixed component 113 being similar to according to example 1.As shown in Figure 3, sensor base 112 is identical with the sensor base 112 according to example 1, simply sensor base 112 has the 3rd surface 112d, and the 3rd surface is formed by by removing 5 μm in the end of corresponding first surface and removing the turning of first surface.As example 1, by utilizing rotational roller 150, bonding part 130 is extruded with the pressure of 0.4MPa so that bonding part 130 bonding is until with first surface 112a side at a distance of the position of 7 μm on the side surface 112c of sensor base 112.
(example 4)
Use scintillator 120, bonding part 130 and the fixed component 113 being similar to according to example 1.As shown in Fig. 4 (b), sensor base 112 is identical with the sensor base 112 according to example 1, and simply sensor base 112 tilts towards the inner side of sensor base 112 with angle D of 1 degree.As example 1, by utilizing rotational roller 150, bonding part 130 is extruded with the pressure of 0.4MPa so that bonding part 130 bonding is until with first surface 112a side at a distance of the position of 4 μm on the side surface 112c of sensor base 112.
The present invention is not only restricted to embodiment described above.Various changes and modifications can be made in the case of without departing from the spirit and scope of the present invention.Therefore, for the open additional following claims of the scope of the present invention.
The application based on and require the priority of the Japanese patent application No.2013-258139 submitted to for 13rd at December in 2013, entire contents is incorporated herein by reference.
Claims (12)
1. a radiation detecting apparatus, including:
Being adjacent to the multiple sensor base arranged each other, each sensor base includes array being provided with the first surface of the multiple photo-electric conversion element second surface relative with first surface and first surface and second surface being connected to side surface each other；
It is arranged in the scintillator at the first surface side of the plurality of sensor base；And
For the plurality of sensor base and scintillator being adhered to lamellar bonding part each other,
Wherein, between the plurality of sensor base, lamellar bonding part is adhered at least some of of first surface and side surface so that lamellar bonding part extend from first surface and be adhered to continuously side surface described at least partially.
Radiation detecting apparatus the most according to claim 1, wherein, between the plurality of sensor base, the plurality of sensor base at least one include being not parallel to first surface and side surface and the 3rd surface being arranged between first surface and side surface, and
Wherein, between the plurality of sensor base, lamellar bonding part extends from first surface and is adhered at least some of of side surface and the 3rd surface continuously.
Radiation detecting apparatus the most according to claim 1 and 2, wherein, between the plurality of sensor base, the plurality of sensor base at least one side surface tilt towards second surface relative to the vertical line being perpendicular to first surface towards the inner side at least one described in sensor base from first surface.
4., according to the arbitrary described radiation detecting apparatus of claims 1 to 3, also include:
Support the base portion of the plurality of sensor base；With
For the plurality of sensor base being fixed to the fixed component of base portion,
Wherein, the rigidity of fixed component is less than the rigidity of bonding part.
5. according to the arbitrary described radiation detecting apparatus of Claims 1-4, wherein, each in the plurality of sensor base also include along the periphery of the plurality of photo-electric conversion element be arranged in first surface at least some of on retaining ring, the part covering retaining ring and the passivating film of the plurality of photo-electric conversion element and the overcoat in addition to the end section of passivating film, passivating film covered, and
Wherein, between the plurality of sensor base, lamellar bonding part overcoat, passivating film, retaining ring, first surface and side surface described at least some of on extend and bond continuously.
6. a radiation detection system, including:
According to the arbitrary described radiation detecting apparatus of claim 1 to 5；With
Display equipment, it is based on the signal display image obtained by radiation detecting apparatus.
7. for the method manufacturing radiation detecting apparatus, including:
The deposition step of scintillator is arranged at the first surface side of multiple sensor base, wherein lamellar bonding part is between first surface side and scintillator, the plurality of sensor base is adjacent to arrange each other, and each sensor base includes array is provided with the first surface of the multiple photo-electric conversion element second surface relative with first surface and side surface first surface and second surface being connected to each other；And
Adhesion step, wherein by from the region corresponding with the region between the plurality of sensor base in contrast to the side of the plurality of sensor base extruding scintillator so that lamellar bonding part extends from first surface and the side surface that is adhered to continuously between the plurality of sensor base at least some of.
Method for manufacturing radiation detecting apparatus the most according to claim 7, wherein, between the plurality of sensor base, the plurality of sensor base at least one include being not parallel to first surface and side surface and the 3rd surface being arranged between first surface and side surface, and
Wherein, adhesion step include extending from first surface so that lamellar bonding part and be adhered to continuously the 3rd surface and the side surface between the plurality of sensor base described at least partially.
9. according to the method being used for manufacturing radiation detecting apparatus described in claim 7 or 8, wherein, between the plurality of sensor base, the plurality of sensor base at least one side surface tilt towards second surface relative to the vertical line being perpendicular to first surface towards the inner side at least one described in sensor base from first surface.
10., according to the arbitrary described method being used for manufacturing radiation detecting apparatus of claim 7 to 9, also include:
By utilizing fixed component that the plurality of sensor base is fixed to the fixing step of base portion,
Wherein, the rigidity of fixed component is less than the rigidity of lamellar bonding part.
11. according to the arbitrary described method being used for manufacturing radiation detecting apparatus of claim 7 to 10, wherein, each in the plurality of sensor base also include along the periphery of the plurality of photo-electric conversion element be arranged in first surface at least some of on retaining ring, the part covering retaining ring and the passivating film of the plurality of photo-electric conversion element and in addition to the end section of passivating film, cover the overcoat of passivating film, and
Wherein, adhesion step include so that lamellar bonding part overcoat, passivating film, retaining ring, first surface and the side surface between the plurality of sensor base described at least some of on extend and bond continuously.
12. according to the arbitrary described method being used for manufacturing radiation detecting apparatus of claim 7 to 11, wherein, adhesion step includes: by utilizing roller from the region corresponding with the region between the plurality of sensor base in contrast to the extruding of the side of the plurality of sensor base.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910219458.9A CN110045410B (en) | 2013-12-13 | 2014-10-30 | Radiation detection device, method of manufacturing the same, and radiation detection system |
| CN201811096760.1A CN109239761B (en) | 2013-12-13 | 2014-10-30 | Radiation detection device, radiation detection system, and method for manufacturing radiation detection device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-258139 | 2013-12-13 | ||
| JP2013258139A JP6270450B2 (en) | 2013-12-13 | 2013-12-13 | Radiation detection apparatus, radiation detection system, and method of manufacturing radiation detection apparatus |
| PCT/JP2014/078874 WO2015087636A1 (en) | 2013-12-13 | 2014-10-30 | Radiation detection apparatus, radiation detection system, and radiation detection apparatus manufacturing method |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811096760.1A Division CN109239761B (en) | 2013-12-13 | 2014-10-30 | Radiation detection device, radiation detection system, and method for manufacturing radiation detection device |
| CN201910219458.9A Division CN110045410B (en) | 2013-12-13 | 2014-10-30 | Radiation detection device, method of manufacturing the same, and radiation detection system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105829916A true CN105829916A (en) | 2016-08-03 |
| CN105829916B CN105829916B (en) | 2019-04-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910219458.9A Active CN110045410B (en) | 2013-12-13 | 2014-10-30 | Radiation detection device, method of manufacturing the same, and radiation detection system |
| CN201480068223.XA Active CN105829916B (en) | 2013-12-13 | 2014-10-30 | Radiation detecting apparatus, radiation detection system and the method for manufacturing radiation detecting apparatus |
| CN201811096760.1A Active CN109239761B (en) | 2013-12-13 | 2014-10-30 | Radiation detection device, radiation detection system, and method for manufacturing radiation detection device |
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| CN201910219458.9A Active CN110045410B (en) | 2013-12-13 | 2014-10-30 | Radiation detection device, method of manufacturing the same, and radiation detection system |
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| CN201811096760.1A Active CN109239761B (en) | 2013-12-13 | 2014-10-30 | Radiation detection device, radiation detection system, and method for manufacturing radiation detection device |
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|---|---|
| US (2) | US20160291172A1 (en) |
| JP (1) | JP6270450B2 (en) |
| KR (1) | KR101818874B1 (en) |
| CN (3) | CN110045410B (en) |
| DE (1) | DE112014005663T5 (en) |
| GB (1) | GB2536394B (en) |
| WO (1) | WO2015087636A1 (en) |
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| JP6877289B2 (en) * | 2017-07-31 | 2021-05-26 | キヤノン株式会社 | Manufacturing method of radiation detection device, radiation detection system, and radiation emission device |
| JP6601825B2 (en) | 2018-04-06 | 2019-11-06 | 株式会社ＥｍｂｏｄｙＭｅ | Image processing apparatus and two-dimensional image generation program |
| JP6659182B2 (en) | 2018-07-23 | 2020-03-04 | キヤノン株式会社 | Radiation imaging apparatus, manufacturing method thereof, and radiation imaging system |
| EP4039193A4 (en) * | 2019-09-30 | 2022-11-23 | FUJIFILM Corporation | Radiation imaging device and radiation imaging device control method |
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Also Published As
| Publication number | Publication date |
|---|---|
| US20160291172A1 (en) | 2016-10-06 |
| US11226419B2 (en) | 2022-01-18 |
| CN109239761B (en) | 2023-01-10 |
| KR101818874B1 (en) | 2018-01-15 |
| KR20160094438A (en) | 2016-08-09 |
| GB201612140D0 (en) | 2016-08-24 |
| GB2536394A (en) | 2016-09-14 |
| CN109239761A (en) | 2019-01-18 |
| CN110045410B (en) | 2023-01-03 |
| CN105829916B (en) | 2019-04-02 |
| US20200183022A1 (en) | 2020-06-11 |
| JP2015114268A (en) | 2015-06-22 |
| CN110045410A (en) | 2019-07-23 |
| WO2015087636A1 (en) | 2015-06-18 |
| DE112014005663T5 (en) | 2016-09-15 |
| JP6270450B2 (en) | 2018-01-31 |
| GB2536394B (en) | 2020-12-09 |
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