CN105789363A - Tunable absorption-type sensor structure and applications thereof based on graphene super surface structure - Google Patents
Tunable absorption-type sensor structure and applications thereof based on graphene super surface structure Download PDFInfo
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- CN105789363A CN105789363A CN201610256610.7A CN201610256610A CN105789363A CN 105789363 A CN105789363 A CN 105789363A CN 201610256610 A CN201610256610 A CN 201610256610A CN 105789363 A CN105789363 A CN 105789363A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 54
- 239000000463 material Substances 0.000 claims abstract description 61
- 238000010521 absorption reaction Methods 0.000 claims abstract description 39
- 239000011159 matrix material Substances 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 239000004020 conductor Substances 0.000 claims abstract description 13
- 238000002835 absorbance Methods 0.000 claims description 22
- 238000010276 construction Methods 0.000 claims description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Chemical compound [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000004408 titanium dioxide Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract description 2
- 230000007613 environmental effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 33
- 238000005516 engineering process Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- -1 polarity matrix 3 Chemical compound 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000011176 pooling Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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Abstract
The invention discloses a tunable absorption-type sensor structure based on a graphene super surface structure, which is characterized by comprising a hollow polar matrix (3); the upper and the lower of the polar matrix (3) are opened; the hollow part of the polar matrix (3) is sequentially filled with a conductor material layer (1) and a semiconductor material layer (2) from bottom to top; the semiconductor material layer (2) is filled to be flush with the upper surface of the outer edge of the opening of the matrix; and strip-shaped graphene material layers (4) coat at intervals the surface formed by the semiconductor material layer and the upper surface of the outer edge of the opening of the polar matrix. The graphene super surface absorption structure has electric tuning features, that is, when voltage is loaded to the structure, the absorption frequency band changes along with changes of the voltage; both independent tuning and combined tuning can be realized; the positions and the number of absorption frequency points regulated by voltage can be realized through the graphene surface structure; the feature that an environmental dielectric constant can tune the absorption rate is provided, and the structure can be used for material detection.
Description
Technical field
The present invention relates to a kind of tunable absorption-type sensor construction based on the super surface texture of Graphene, be the single-frequency/double frequency absorption plant of a kind of middle-infrared band.
Background technology
Infrared band (Infrared) refers to wavelength electromagnetic wave between microwave and visible ray, wavelength between 760 nanometers (nm) to 1 millimeter (mm), the non-visible light longer than HONGGUANG.Infrared waves have the features such as penetrance is strong, have been widely used in communication, detection, medical treatment, military affairs etc..
Super surface is a kind of ultra-thin two-dimension array plane constructed by metamaterial structure unit, it may be achieved the flexible Effective Regulation to characteristics such as electromagnetic wave phase place, polarization mode, communication modes.Within 2011, realize unusual EM transmis-sion and reflection by super surface, thus expanding tradition being operated in after the U.S.'s " science " magazine is delivered and namely cause pay close attention to widely of refraction of electromagnetic wave law, negative refraction, negative reflection, polarized rotation can be realized by super surface, pooling as novel physics effects such as, complicated wave beam, propagation wave direction surface wave conversions.Super surface is enriched unique physical characteristic and makes it have important application prospect at stealth technology, antenna technology, microwave and the numerous areas such as THz devices, opto-electronic device electromagnetic flexible modulation ability.
Graphene (Graphene) has cellular two dimensional crystal structure semi-metallic as one, and its special characteristic is quickly paid close attention to by people.Result of study shows, the absorbance of visible ray is 2.3% by single-layer graphene, and absorbance is had obvious impact by the Graphene number of plies.The superior electrical characteristics of Graphene make it have very powerful potential application in printing opacity conductor, photovoltaic device, luminaire etc..
Summary of the invention
It is an object of the invention to provide a kind of tunable absorption-type sensor construction based on the super surface texture of Graphene, this structure has electric tuning performance, is provided simultaneously with the characteristic of the tunable absorption of environment dielectric constant, it is possible to for sensors such as material tests.
To achieve these goals, present invention employs following technical scheme:
A kind of tunable absorption-type sensor construction based on the super surface texture of Graphene, including the polarity matrix of lower open mouth in hollow, the hollow bulb of described polarity matrix has been sequentially filled conductor material layer and semiconductor material layer from the bottom to top, described semiconductor material layer fill to matrix oral area outer rim upper surface flush, described semiconductor material layer, polarity matrix oral area outer rim upper surface on the surface formed, interval is coated with strip grapheme material layer.
Further, the thickness of described conductor material layer is 1um, and described semi-conducting material layer thickness is 2um, and the thickness of described polarity matrix is 3um, and the thickness of described grapheme material layer is 1nm.
The wall thickness W of described polarity matrix2For 0.5um.
The bar number of described strip grapheme material layer is 3, the width d of every Graphene material layer1For 1um, the spacing d of adjacent strip grapheme material layer2For 1um.
Described polarity basic material is barium nitrate (Ba (NO3)2) or other dielectric constants be the material of 5.
Described conductor material layer is gold or silver or copper or other metal material.
Described semiconductor material layer material is titanium dioxide.
A kind of method tuning the super Surface absorption structure absorption frequency of Graphene described above, the method is: to each strip grapheme material layer on-load voltage, loaded voltage respectively u1、u2、u3；
It is: during u1=u2=u3=0.3eV that the super Surface absorption structure of described Graphene absorbs frequency respectively 29THz, 38THz, 45THz and 48.5THz when selecting voltage；Absorbance respectively 40%, 10%, 100%, 26%.
When selecting voltage it is: u1=u3=0.8eV, u2During=0.3eV, the super Surface absorption structure of described Graphene absorbs frequency respectively 36THz and 45THz；Two absorbances absorbing frequency are 100%.
The present invention provides another kind of and tunes the method that the super Surface absorption structure of Graphene described above absorbs frequency, and the method is: select different background environments,
It is air, i.e. ε when selecting background environmentBGWhen=1, the super Surface absorption structure of described Graphene absorbs frequency respectively 29THz, 37THz, 45THz and 48.5THz.
It is water, i.e. ε when selecting background environmentBGWhen=1.312, the super Surface absorption structure of described Graphene absorbs frequency respectively 28.9THz, 37THz, 43.6THz and 50THz.
When the DIELECTRIC CONSTANT ε selecting background environmentBGWhen=1.44, the super Surface absorption structure of described Graphene absorbs frequency respectively 28.7THz, 37THz, 43THz and 48.7THz.
The application in environment measuring of a kind of Graphene described above super Surface absorption structure.
Compared with the prior art, the present invention has the beneficial effect that:
1, the super Surface absorption structure of Graphene of the present invention has electric tuning characteristic, namely on this structure on-load voltage time, absorb frequency range can change with change in voltage；Both can individually tune, it is possible to realize joint debugging.Realize regulating and controlling voltage by graphenic surface structure and absorb position and the number of frequency.
2, Graphene of the present invention super Surface absorption structure possesses the characteristic of the tunable absorbance of environment dielectric constant, can be used as material tests etc..
Accompanying drawing explanation
Fig. 1 is absorbing structure unit front view and the dimensional parameters of the present invention；
Fig. 2 is absorbing structure cell side view and the dimensional parameters of the present invention；
Fig. 3 is the absorbing structure of present invention simulation result to electro-magnetic wave absorption under different background environment；
Fig. 4 is absorbing structure of the present invention tuning characteristic of single pair of electro-magnetic wave absorption under different voltages；
Accompanying drawing labelling: 1 conductor material layer, 2 semiconductor material layers, 3 polarity matrixes, 4 strip grapheme material layers.
Detailed description of the invention
By detailed description of the invention, technical solution of the present invention is further explained explanation below in conjunction with accompanying drawing.
As shown in Figure 1, 2, a kind of tunable absorption-type sensor construction based on the super surface texture of Graphene, including polarity matrix 3, this polarity matrix three is cube structure, its center is provided with a square through hole, being sequentially filled conductor material layer 1 and semiconductor material layer 2 in square through hole from the bottom to top, semiconductor material layer 2 is filled to flushing with body upper surface, semiconductor material layer, polarity body upper surface coating strip grapheme material layer 4 in interval on the surface formed.
In the present embodiment, the thickness of conductor material layer 1 is 1um, and semi-conducting material layer thickness is 2um, and the thickness of polarity matrix 3 is 3um, and the thickness of grapheme material layer 4 is 1nm；The wall thickness W of polarity matrix (3)2For 0.5um, total length and width respectively 5um, 5um.
In the present embodiment, the bar number of strip grapheme material layer 4 is 3, the width d of every Graphene material layer 41For 1um, the spacing d of adjacent strip grapheme material layer2For 1um.
In the present embodiment, polarity matrix 3 material is barium nitrate (Ba (NO3)2) or other dielectric constants be the material of 5；Conductor material layer is gold or silver or copper or other metal material；Semiconductor material layer material is titanium dioxide.
Below with polarity matrix 3 for barium nitrate (Ba (NO3)2), conductor material layer be gold, semiconductor material layer be titanium dioxide make the super Surface absorption structure of Graphene be example, absorption frequency and absorbance to this absorbing structure are described further.
Embodiment 1
As shown in Figure 4, on-load voltage, loaded voltage respectively u are divided to each strip grapheme material layer in Graphene super Surface absorption structure1、u2、u3；
When selecting voltage it is: u1=u2=u3During=0.3eV, the super Surface absorption structure of Graphene absorbs frequency respectively 29THz, 38THz, 45THz and 48.5THz, absorbance respectively 40%, and 10%, 100%, 26%；
When selecting voltage it is: u1=u2=u3During=0.8eV, the super Surface absorption structure of Graphene absorbs frequency respectively 37THz and 39THz；Absorbance is about 40%；
When selecting voltage it is: u1=u3=0.3eV, u2During=0.8eV, the super Surface absorption structure of Graphene absorbs frequency respectively 30THz, 38THz and 48THz, absorbance respectively about 37%, 62% and 45%.
When selecting voltage it is: u1=u3=0.8eV, u2During=0.3eV, the super Surface absorption structure of Graphene absorbs frequency respectively 36THz and 45THz；Absorbance is all close to 100%.
Therefore, in the present embodiment, it is possible to by changing the applied voltage of graphene nano bar, it is achieved absorbing structure tuning absorbs position and the number of frequency, it is achieved single tuning and multiple-tuned absorb.
Embodiment 2
Super for Graphene Surface absorption structure is placed in different background environments.
As it is shown on figure 3, be air, i.e. ε when selecting background environmentBGWhen=1, working frequency range select 20-50THz, the super Surface absorption structure of Graphene low-frequency range occur two absorb frequency, respectively 29THz, 37THz, absorbance 40%, about 10%, high band occur one absorption frequency, frequency is 45THz, absorbance nearly 100%；
It is water, i.e. ε when selecting background environmentBGWhen=1.312, the super Surface absorption structure of Graphene absorbs frequency and moves to left, create traversing phenomenon, concrete condition is: two of low-frequency range absorb frequency range 28.9, the absorbance of 37THz is 35%, about 25%, high band occurs that 2 absorb frequency, frequency is 43.6THz and 50THz respectively, absorbance 98.8% and 99%.
DIELECTRIC CONSTANT ε is selected when selecting background environmentBG=1.44 oily time, the super Surface absorption structure of Graphene absorbs frequency and divides and continue to be moved to the left, and first absorbs frequency 28.7THz, and absorbance is 35%, and frequency change is less.Second absorbs frequency 37THz place, and absorbance is 33%, and absorbance relatively above two kinds of environment slightly increase.3rd absorbs frequency 43THz, and absorbance is 97%, absorbs frequency and moves to left, and absorbance slightly reduces.4th absorbs frequency 48.7THz, absorbance nearly 99%.
Therefore, in the present embodiment, it is possible to absorbed the change of frequency by absorbing structure under obstructed background environment, can be used for environment (including liquid environment, such as water, wet goods) detection；Reach tuning also by the working background environment changing absorbing structure and absorb the purpose of frequency.
Claims (10)
1. the tunable absorption-type sensor construction based on the super surface texture of Graphene, it is characterized in that, including the polarity matrix (3) of lower open mouth in hollow, the hollow bulb of described polarity matrix (3) has been sequentially filled conductor material layer (1) and semiconductor material layer (2) from the bottom to top, described semiconductor material layer (2) fill to matrix oral area outer rim upper surface flush, described semiconductor material layer, polarity matrix oral area outer rim upper surface on the surface formed, interval is coated with strip grapheme material layer (4).
2. a kind of tunable absorption-type sensor construction based on the super surface texture of Graphene according to claim 1, it is characterized in that, the thickness of described conductor material layer (1) is 1um, described semi-conducting material layer thickness is 2um, the thickness of described polarity matrix (3) is 3um, and the thickness of described grapheme material layer (4) is 1nm.
3. a kind of tunable absorption-type sensor construction based on the super surface texture of Graphene according to claim 2, it is characterised in that the wall thickness W of described polarity matrix (3)2For 0.5um.
4. a kind of tunable absorption-type sensor construction based on the super surface texture of Graphene according to claim 1 or 3, it is characterized in that, the bar number of described strip grapheme material layer (4) is 3, the width d of every Graphene material layer (4)1For 1um, the spacing d of adjacent strip grapheme material layer2For 1um.
5. a kind of tunable absorption-type sensor construction based on the super surface texture of Graphene according to claim 4, it is characterised in that described polarity matrix (3) material is barium nitrate (Ba (NO3)2) or other dielectric constants be the material of 5.
6. a kind of tunable absorption-type sensor construction based on the super surface texture of Graphene according to claim 5, it is characterised in that described conductor material layer is gold or silver or copper or other metal material.
7. a kind of tunable absorption-type sensor construction based on the super surface texture of Graphene according to claim 6, it is characterised in that described semiconductor material layer material is titanium dioxide.
8. one kind tunes the method that the super Surface absorption structure of Graphene described in claim 7 absorbs frequency, it is characterised in that to each strip grapheme material layer on-load voltage, loaded voltage respectively u1、u2、u3；
When selecting voltage it is: u1=u2=u3During=0.3eV, the super Surface absorption structure of described Graphene absorbs frequency respectively 29THz, 38THz and 45THz；Absorbance respectively 40%, 10%, 100%.
When selecting voltage it is: u1=u3=0.8eV, u2During=0.3eV, the super Surface absorption structure of described Graphene absorbs frequency respectively 36THz and 45THz；Two absorbances absorbing frequency are 100%.
9. one kind tunes the method that the super Surface absorption structure of Graphene described in claim 7 absorbs frequency, it is characterised in that select different background environments:
It is air, i.e. ε when selecting background environmentBGWhen=1, the super Surface absorption structure of described Graphene absorbs frequency respectively 29THz, 37THz, 45THz and 48.5THz；
It is water, i.e. ε when selecting background environmentBGWhen=1.312, the super Surface absorption structure of described Graphene absorbs frequency respectively；28.9THz, 37THz, 43.6THz and 50THz；
When the DIELECTRIC CONSTANT ε selecting background environmentBGWhen=1.44, the super Surface absorption structure of described Graphene absorbs frequency respectively 28.7THz, 37THz, 43THz and 48.7THz.
10. Graphene super Surface absorption structure application in environment measuring described in a claim 8.
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| CN107732375A (en) * | 2017-09-29 | 2018-02-23 | 西安电子科技大学 | A kind of super surface of Arbitrary 3 D curved surface graphene for the regulation and control of electromagnetic wave phase |
| CN107799906A (en) * | 2017-11-03 | 2018-03-13 | 哈尔滨理工大学 | A kind of tunable Terahertz graphene meta-material absorber |
| CN111883935A (en) * | 2020-09-03 | 2020-11-03 | 浙江科技学院 | Terahertz wave absorber based on graphene metamaterial |
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