CN105789250B - Pixel circuit and its driving method and organic light emitting display - Google Patents
Pixel circuit and its driving method and organic light emitting display Download PDFInfo
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- CN105789250B CN105789250B CN201410830671.0A CN201410830671A CN105789250B CN 105789250 B CN105789250 B CN 105789250B CN 201410830671 A CN201410830671 A CN 201410830671A CN 105789250 B CN105789250 B CN 105789250B
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Abstract
In pixel circuit provided by the invention and its driving method and organic light emitting display,The pixel circuit initializes the anode of Organic Light Emitting Diode by first film transistor and the second thin film transistor (TFT),The grid and drain electrode of being used as the 6th thin film transistor (TFT) of driving element are initialized by first film transistor and third thin film transistor (TFT),The overshoot current in initialization procedure is eliminated by the 7th thin film transistor (TFT) simultaneously,Thereby increase the service life of the Organic Light Emitting Diode and the 6th thin film transistor (TFT),And,The electric current that the 6th thin film transistor (TFT) as driving element is exported is unrelated with the threshold voltage of the 6th thin film transistor (TFT) and the impedance of power supply cabling,Therefore the brightness disproportionation caused by impedance difference of the threshold voltage deviation by thin film transistor (TFT) with power supply cabling can be avoided,And then improve the display quality of organic light emitting display.
Description
Technical field
The present invention relates to technical field of flat panel display, more particularly to a kind of pixel circuit and its driving method and organic light emission
Display.
Background technology
Organic light emitting display (full name in English Organic Lighting Emitting Display, abbreviation OLED) energy
Enough self-luminescences, unlike Thin Film Transistor-LCD (full name in English Thin Film Transistor liquid
Crystal display, abbreviation TFT-LCD) need back light system (backlight system) that can just light, therefore visibility
It is and more frivolous with the equal higher of brightness.Currently, organic light emitting display is known as that Thin Film Transistor-LCD can be replaced
Display of new generation.
Referring to FIG. 1, its circuit diagram for the pixel of the organic light emitting display of the prior art.As shown in Figure 1, organic hair
Each pixel of optical display unit includes pixel circuit 10 and Organic Light Emitting Diode OLED, the pixel circuit 10 and data line Dm
It is connected with scan line Sn, and controls shining for the Organic Light Emitting Diode OLED, wherein the pixel circuit 10 includes switch
The grid of thin film transistor (TFT) M1, driving transistor M2 and storage capacitance Cst, the switching thin-film transistor M1 connect with scan line Sn
It connects, the source electrode of the switching thin-film transistor M1 is connect with data line Dm, grid and the switch of the driving transistor M2
The drain electrode of thin film transistor (TFT) M1 connects, and the source electrode of the driving transistor M2 passes through the first power supply cabling (not shown) and the
The drain electrode of one power supply ELVDD connections, the driving transistor M2 is connect with the anode of the Organic Light Emitting Diode OLED, described
The cathode of Organic Light Emitting Diode OLED is connect by second source cabling (not shown) with second source ELVSS, described
Organic Light Emitting Diode OLED shines according to the electric current that the pixel circuit 10 provides, and the storage capacitance Cst is connected to institute
Between the grid and source electrode of stating driving transistor M2, the switching thin-film transistor is arrived for maintaining to provide during the scheduled time
The threshold voltage of the data voltage of the grid of M1 and the driving transistor M2.
However, the deviation meeting of manufacturing process and cause the threshold voltage of thin film transistor (TFT) difference occur.And as driving member
The deviation of the thin film transistor (TFT) of part, threshold voltage can cause the Organic Light Emitting Diode OLED for the data of same brightness
Signal still launches the light of different brightness, causes brightness disproportionation, influences display effect.
Moreover, because the power supply cabling of connection the first power supply ELVDD and pixel circuit 10 is there are certain impedance, when
When having electric current to flow through, power supply cabling can influence the power supply positive pressure VDD for being actually reached the pixel circuit 10, lead to each pixel electricity
The power supply positive pressure VDD that road 10 receives is inconsistent, and then aggravates brightness disproportionation phenomenon.If driving transistor M2 is thoroughly led
It is logical, generate overshoot current, it will shorten the service life of the driving transistor M2 and Organic Light Emitting Diode OLED.
Invention content
The purpose of the present invention is to provide a kind of pixel circuit and its driving method and organic light emitting displays, existing to solve
The problem of some organic light emitting display brightness disproportionations.
To solve the above problems, the present invention provides a kind of pixel circuit, the pixel circuit includes:
First film transistor is connected between third node and third power supply, and grid is connected to third scan line;
Second thin film transistor (TFT) is connected between third node and the anode of Organic Light Emitting Diode, and grid is connected to
First scan line;
Third thin film transistor (TFT) is connected between second node and third node, and grid is connected to the second scan line;
4th thin film transistor (TFT), is connected between data line and first node;
5th thin film transistor (TFT) is connected between first node and third power supply, and grid is connected to the first scan line;
6th thin film transistor (TFT) is connected between the drain electrode and third node of the 7th thin film transistor (TFT), and grid is connected to
Second node;
7th thin film transistor (TFT) is connected between the first power supply and the source electrode of the 6th thin film transistor (TFT);
First capacitance, is connected between first node and second node, for storing signal.
Optionally, further include the second capacitance in the pixel circuit, second capacitance connection second node with
Between second scan line, for responding scanning signal that second scan line is provided with to the voltage at the second node
It boosts.
Optionally, in the pixel circuit, first power supply and second source are used as the organic light-emitting diodes
The driving power of pipe, the third power supply are used to be the grid of the 6th thin film transistor (TFT), the 6th thin film transistor (TFT)
The anode of drain electrode and the Organic Light Emitting Diode provides initialization level.
Optionally, in the pixel circuit, it includes the first stage to drive the scan period of the pixel circuit
Five stages;
The anode of the Organic Light Emitting Diode is initialized in the first stage between the phase III, and described
The grid of six thin film transistor (TFT)s and drain electrode are initialized in the second stage, the threshold voltage of the 6th thin film transistor (TFT)
It is sampled in the fourth stage;The grid voltage of 6th thin film transistor (TFT) passes through second capacitance in the 5th stage
It boosts.
Optionally, in the pixel circuit, the 7th thin film transistor (TFT) is constantly in the first stage and cuts
Only state.
Optionally, in the pixel circuit, the 6th thin film transistor (TFT) is provided to the Organic Light Emitting Diode
The data voltage that is provided by the data line of electric current and the initialization voltage that provides of the third power supply determine, and with described the
The threshold voltage for the supply voltage and the 6th thin film transistor (TFT) that one power supply and second source provide is unrelated.
Correspondingly, the present invention also provides a kind of driving method of pixel circuit, the driving method packet of the pixel circuit
It includes:
Scan period is divided into first stage, second stage, phase III, fourth stage and the 5th stage, wherein
In the first stage, the scanning signal that the first scan line provides keeps low level, the second scan line and the 4th scan line
The scanning signal of offer keeps high level, the scanning signal that third scan line provides to become low level, the 5th scanning from high level
The scanning signal that line provides becomes high level by low level, and the first film transistor becomes being connected from ending, and the described 7th
Thin film transistor (TFT) becomes ending from being connected, by the first film transistor and the second thin film transistor (TFT) to the organic light emission
The anode of diode is initialized;
In second stage, the scanning signal that the first scan line and third scan line provide keeps low level, the 4th scan line
High level, the scanning signal that the second scan line provides is kept to become low electricity from high level with the scanning signal that the 5th scan line provides
Flat, the third thin film transistor (TFT) becomes being connected from ending, and passes through the first film transistor and third thin film transistor (TFT) pair
The grid of 6th thin film transistor (TFT) and drain electrode are initialized;
In the phase III, the scanning signal that the second scan line and third scan line provide keeps low level, the 5th scan line
The scanning signal of offer keeps high level, the scanning signal that the first scan line provides to become high level, the 4th scanning from low level
The scanning signal that line provides becomes low level from high level, and second thin film transistor (TFT) and the 5th thin film transistor (TFT) are by conducting
Become ending, the 4th thin film transistor (TFT) conducting, stops the initialization to the Organic Light Emitting Diode anode and by data
Voltage is transmitted to one end of the first capacitance;
In fourth stage, the scanning signal that the first scan line provides keeps high level, the second scan line and the 4th scan line
The scanning signal of offer keeps low level, the scanning signal that third scan line provides to become high level, the 5th scanning from low level
The scanning signal that line provides becomes low level from high level, and the first film transistor becomes ending from being connected, and the described 7th
Thin film transistor (TFT) becomes to be connected by ending, and stops the initialization to the 6th thin film transistor (TFT) and starts to the 6th film
The threshold voltage of transistor is sampled;
In the 5th stage, the scanning signal that the second scan line provides becomes high level, third thin film transistor (TFT) from low level
Become ending from conducting, second capacitance boosts to the second node at this time;After the cut-off of third thin film transistor (TFT),
The scanning signal that first scan line provides becomes low level from high level, while the scanning signal that the 4th scan line provides is by low electricity
Flat to become high level, second thin film transistor (TFT) and the 5th thin film transistor (TFT) are become being connected from cut-off, the 4th film
Transistor becomes ending from being connected, and the 6th thin film transistor (TFT) conducting, output current is to drive the Organic Light Emitting Diode
It shines.
Optionally, in the driving method of the pixel circuit, in the first stage, by the 7th film crystal
Pipe remains cut-off state.
Optionally, in the driving method of the pixel circuit, when the first film transistor and the second film are brilliant
When body pipe is connected jointly, the anode of the Organic Light Emitting Diode is initialized by the third power supply;
When the first film transistor and third thin film transistor (TFT) are connected jointly, by the third power supply to described
The grid of six thin film transistor (TFT)s and drain electrode are initialized.
Correspondingly, the present invention also provides a kind of organic light emitting display, the organic light emitting display includes institute as above
The pixel circuit stated.
In pixel circuit provided by the invention and its driving method and organic light emitting display, the pixel circuit passes through
The first film transistor and the second thin film transistor (TFT) initialize the anode of the Organic Light Emitting Diode, pass through institute
State first film transistor and third thin film transistor (TFT) to the grid of the 6th thin film transistor (TFT) as driving element and drain into
Row initialization, while the overshoot current in initialization procedure is eliminated by the 7th thin film transistor (TFT), it thereby increases described
The service life of Organic Light Emitting Diode and the 6th thin film transistor (TFT), moreover, the 6th thin film transistor (TFT) institute as driving element
The electric current of output is unrelated with the threshold voltage of the 6th thin film transistor (TFT) and the impedance of power supply cabling, therefore can avoid by film crystalline substance
Brightness disproportionation caused by impedance difference of the threshold voltage deviation of body pipe with power supply cabling, and then improve organic light emitting display
Display quality.
Description of the drawings
Fig. 1 is the circuit diagram of the pixel of the organic light emitting display of the prior art;
Fig. 2 is the circuit diagram of the pixel circuit of the embodiment of the present invention one;
Fig. 3 is the sequence diagram of the driving method of the pixel circuit of the embodiment of the present invention one;
Fig. 4 is the circuit diagram of the pixel circuit of the embodiment of the present invention two;
Fig. 5 is the sequence diagram of the driving method of the pixel circuit of the embodiment of the present invention two;
Fig. 6 is the circuit diagram of the pixel circuit of the embodiment of the present invention three;
Fig. 7 is the sequence diagram of the driving method of the pixel circuit of the embodiment of the present invention three.
Specific implementation mode
Below in conjunction with the drawings and specific embodiments to a kind of pixel circuit proposed by the present invention and its driving method and organic
Active display is described in further detail.According to following explanation and claims, advantages and features of the invention will be more clear
Chu.It should be noted that attached drawing is all made of very simplified form and uses non-accurate ratio, only to conveniently, lucidly
Aid in illustrating the purpose of the embodiment of the present invention.
【Embodiment one】
Referring to FIG. 2, its structural schematic diagram for the pixel circuit of the embodiment of the present invention one.As shown in Fig. 2, the pixel
Circuit 20 includes:First film transistor M1 is connected between third node N3 and third power supply VREF, and grid is connected to
Three scan line S3;Second thin film transistor (TFT) M2, is connected between third node N3 and the anode of Organic Light Emitting Diode, grid
It is connected to the first scan line S1;Third thin film transistor (TFT) M3 is connected between second node N2 and third node N3, and grid connects
It is connected to the second scan line S2;4th thin film transistor (TFT) M4 is connected between data line DATA and first node N1;5th film is brilliant
Body pipe M5 is connected between first node N1 and third power supply VREF, and grid is connected to the first scan line S1;6th film is brilliant
Body pipe M6, is connected between the drain electrode of the 7th thin film transistor (TFT) M7 and third node N3, and grid is connected to second node N2;The
Seven thin film transistor (TFT) M7 are connected between the first power supply ELVDD and the source electrode of the 6th thin film transistor (TFT) M6;First capacitance C1, even
It is connected between first node N1 and second node N2, for storing signal.
Specifically, the pixel circuit 20 passes through power supply cabling and external power supply, including the first power supply ELVDD, the second electricity
Source ELVSS is connected with third power supply VREF.Wherein, the first power supply ELVDD and second source ELVSS is used as organic light emission two
The driving power of pole pipe OLED, the third power supply VREF is for providing initialization voltage.What the first power supply ELVDD was provided
First supply voltage is generally high level, and the second source voltage that the second source ELVSS is provided is generally low-voltage, described
The initialization voltage that third power supply VREF is provided is generally negative pressure or the low-voltage close to 0V.
As shown in Fig. 2, the anode of the Organic Light Emitting Diode OLED is connect with the pixel circuit 20, organic hair
The cathode of optical diode OLED is connected to the second source ELVSS by second source cabling (not shown), described
In pixel circuit 20, the source electrode of the 7th thin film transistor (TFT) M7 is connected to described by the first power supply cabling (not shown)
First power supply ELVDD, the source electrode of the 6th thin film transistor (TFT) M6 is connect with the drain electrode of the 7th thin film transistor (TFT) M7, described
The grid of 6th thin film transistor (TFT) M6 is connect with the source electrode of third thin film transistor (TFT) M3, the leakage of the 6th thin film transistor (TFT) M6
Pole, the drain electrode of third thin film transistor (TFT) M3, the source electrode of first film transistor M1 and the second thin film transistor (TFT) M2 source electrode connect
The drain electrode for being connected to third node N3, the second thin film transistor (TFT) M2 is connect with the anode of the Organic Light Emitting Diode OLED.
Wherein, the 6th thin film transistor (TFT) M6 provides electricity as driving transistor for the Organic Light Emitting Diode OLED
Stream, the Organic Light Emitting Diode OLED response currents and shine.
With continued reference to FIG. 2, the drain electrode of the first film transistor M1 and the drain electrode of the 5th thin film transistor (TFT) M5
Connect with the third power supply VREF, the drain electrode of the 4th thin film transistor (TFT) M4, the source electrode of the 5th thin film transistor (TFT) M5 with
And first capacitance C1 one end be connected to the other end of first node N1, the first capacitance C1, the second capacitance C2 it is another
The source electrode of end and third thin film transistor (TFT) M3 are connected to second node N2, the second thin film transistor (TFT) M2 and the 5th film is brilliant
The grid of body pipe M5 is connect with the first scan line S1, and the 5th thin film transistor (TFT) M5 is in response to the first scan line S1 institutes
The reference voltage provided from third power supply VREF is supplied to the first node N1 by the scanning signal of offer, and described first
The grid of thin film transistor (TFT) M1 is connect with third scan line S3, and the first film transistor M1 is in response to the third scan line
The reference voltage provided from third power supply VREF is supplied to the third node N3 by the scanning signal that S3 is provided, described
One end of second capacitance C2 is connect with the second scan line S2 with the grid of third thin film transistor (TFT) M3, the third film crystal
The scanning signal that pipe M3 is provided in response to the second scan line S2, the initialization voltage that will be provided from third power supply VREF
It is supplied to the second node N2.
As shown in Fig. 2, the initialization voltage Vref is applied to first segment when the 5th thin film transistor (TFT) M5 is connected
Point N1, when the first film transistor M1 is connected, the initialization voltage Vref is applied to third node N3, when described
One thin film transistor (TFT) M1 and third thin film transistor (TFT) M3 when simultaneously turning on the initialization voltage Vref be applied to second node N2
With third node N3.
With continued reference to FIG. 2, the grid of the 4th thin film transistor (TFT) M4 is connect with the 4th scan line S4, the described 4th is thin
The source electrode of film transistor M4 is connect with data line DATA, and the data voltage Vdata of driving chip (not shown) output passes through
The data line DATA is transmitted, the 4th thin film transistor (TFT) M4 drain electrode respectively with one end of the first capacitance C1 and
The source electrode of the 5th thin film transistor (TFT) M5 connects, and the 4th thin film transistor (TFT) M4 is carried in response to the 4th scan line S4
The data voltage Vdata transmitted via data line DATA is supplied to the first node N1 by the scanning signal of confession.
The pixel circuit 20 further includes the second capacitance C2, and the second capacitance C2 is connected to second node N2 and is swept with second
Between retouching line S2, for the scanning signal provided in response to the second scan line S2, to the electricity at the second node N2
Pressure is boosted.As shown in Fig. 2, drain electrode and fiveth of the one end of the first capacitance C1 with the 4th thin film transistor (TFT) M4 are thin
The source electrode of film transistor M5 connects, the other end of the first capacitance C1 and the grid of the 6th thin film transistor (TFT) M6, third
One end of the source electrode of thin film transistor (TFT) M3 and the second capacitance C2 connect, and the other end of the second capacitance C2 is connected to the second scanning
Line S2.
Wherein, the first capacitance C1 is as storage capacitance, for storing signal.As the second node N2 and described
The potential difference of one node N1 is charged to the first capacitance C1, thus the first capacitance C1 keeps voltage signal.Second electricity
Hold C2 as boost capacitor, in response to scanning signal that the second scan line S2 is provided to the second node N2 at
Voltage boosts.When the scanning signal that the second scan line S2 is provided jumps to high level from low level, the voltage of saltus step
The grid of the 6th thin film transistor (TFT) M6 will be increased to so that the grid voltage Vg6 of the 6th thin film transistor (TFT) M6 is increased, from
And the leakage current of the 6th thin film transistor (TFT) M6 is reduced, and then improve and display contrast.
In the present embodiment, the pixel circuit 20 is a kind of 7T2C types circuit structure, including 7 thin film transistor (TFT)s and 2
Capacitance, 7 thin film transistor (TFT)s are P-type TFT (TFT).The pixel circuit 20 connects with 5 scan lines respectively
It connects.Wherein, the first scan line S1 is connected with the grid of the second thin film transistor (TFT) M2 and the 5th thin film transistor (TFT) M5, uses
In control initialization and stablize capacitance.The second scan line S2 is connected with the grid of the third thin film transistor (TFT) M3, is used for
Control the sampling of the threshold voltage of driving transistor.The grid phase of the third scan line S3 and the first film transistor M1
Even, the initialization for controlling the Organic Light Emitting Diode OLED anodes.The 4th scan line S4 and the 4th film
The grid of transistor M4 is connected, the write-in for controlling data voltage Vdata.The 5th scan line S5 and the 7th film
The grid of transistor M7 is connected, the overshoot current for controlling driving transistor during initialization.
Compared with without the pixel circuit of the 7T1C structures of the second capacitance C2, the picture of the 7T2C structures with the second capacitance C2
The voltage of second node N2 can be increased in plain circuit, the leakage current smaller of driving transistor, therefore the contrast higher shown.
Correspondingly, the present invention also provides a kind of driving methods of pixel circuit.Incorporated by reference to referring to figs. 2 and 3, the picture
The driving method of plain circuit includes:
Scan period is divided into first stage T1, second stage T2, phase III T3, fourth stage T4 and the 5th stage T5,
Wherein,
T1 in the first stage, the scanning signal that the first scan line S1 is provided keep low level, the second scan line S2 and the 4th
The scanning signal that scan line S4 is provided keeps high level, the scanning signal that third scan line S3 is provided to become low electricity from high level
Flat, the scanning signal that the 5th scan line S5 is provided becomes high level by low level, and the first film transistor M1 is become by cut-off
For conducting, the 7th thin film transistor (TFT) M7 becomes ending from being connected, and passes through the first film transistor M1 and the second film
Transistor M2 initializes the anode of the Organic Light Emitting Diode OLED;
In second stage T2, the scanning signal holding low level that the first scan line S1 and third scan line S3 are provided, the 4th
The scanning signal that scan line S4 and the 5th scan line S5 are provided keeps high level, and the scanning signal that the second scan line S2 is provided is by height
Level becomes low level, and the third thin film transistor (TFT) M3 becomes being connected from ending, by the first film transistor M1 and
Third thin film transistor (TFT) M3 initializes the grid of the 6th thin film transistor (TFT) M6 and drain electrode;
In phase III T3, the scanning signal holding low level that the second scan line S2 and third scan line S3 are provided, the 5th
The scanning signal that scan line S5 is provided keeps high level, the scanning signal that the first scan line S1 is provided to become high electricity from low level
Flat, the scanning signal that the 4th scan line S4 is provided becomes low level from high level, and the second thin film transistor (TFT) M2 and the 5th is thin
Film transistor M5 is become ending from conducting, and the 4th thin film transistor (TFT) M4 conductings stop to the Organic Light Emitting Diode
The initialization of OLED anodes and one end that data voltage Vdata is transmitted to the first capacitance C1;
In fourth stage T4, the scanning signal that the first scan line S1 is provided keeps high level, the second scan line S2 and the 4th
The scanning signal that scan line S4 is provided keeps low level, the scanning signal that third scan line S3 is provided to become high electricity from low level
Flat, the scanning signal that the 5th scan line S5 is provided becomes low level from high level, and the first film transistor M1 is become by conducting
For cut-off, the 7th thin film transistor (TFT) M7 becomes to be connected by ending, and stops the initialization to the 6th thin film transistor (TFT) M6
And start to sample the threshold voltage of the 6th thin film transistor (TFT) M6;
In the 5th stage T5, the scanning signal that the second scan line S2 is provided becomes high level from low level, and the third is thin
Film transistor M3 becomes ending from being connected, and is boosted to the second node N2 by the second capacitance C2;The third
After thin film transistor (TFT) M3 cut-offs, the scanning signal that the first scan line S1 is provided becomes low level from high level, while the 4th sweeps
Retouch the scanning signal that line S4 is provided becomes high level, the second thin film transistor (TFT) M2 and the 5th thin film transistor (TFT) M5 from low level
Becoming being connected from cut-off, the 4th thin film transistor (TFT) M4 becomes ending from being connected, the 6th thin film transistor (TFT) M6 conductings,
Output current is to drive the Organic Light Emitting Diode OLED to shine.
Specifically, T1 in the first stage, since the third scan line S3 scanning signals provided become low level from high level,
The first film transistor M1 becomes being connected from ending, since the 5th scan line S5 scanning signals provided are become by low level
High level, the 7th thin film transistor (TFT) M7 become ending from being connected, the initialization electricity that the third power supply VREF is provided at this time
Pressure Vref is applied to the Organic Light Emitting Diode OLED via the first film transistor M1 and the second thin film transistor (TFT) M2
Anode, to being initialized to the anode of the Organic Light Emitting Diode OLED, i.e., by the Organic Light Emitting Diode
The anode voltage of OLED is set to low level.
In the process, the anode of the Organic Light Emitting Diode OLED is carried out by the third power supply VREF initial
Change, to increase the service life of the Organic Light Emitting Diode OLED, moreover, because the 7th thin film transistor (TFT) M7 mono-
It is directly in cut-off state, the electric current that the first power supply ELVDD is generated can not be by the 7th thin film transistor (TFT) M7, to eliminate
Overshoot current.
In second stage T2, the scanning signal that is provided due to the second scan line S2 becomes low level from high level, and described the
Three thin film transistor (TFT) M3 become being connected from ending, and the initialization voltage Vref that third power supply VREF is provided at this time is via described first
Thin film transistor (TFT) M1 and third thin film transistor (TFT) M3 is applied separately to grid and the drain electrode of the 6th thin film transistor (TFT) M6, to
The grid and drain electrode of the 6th thin film transistor (TFT) M6 are initialized.
In the process, by the third power supply VREF to being used as the grid of the 6th thin film transistor (TFT) M6 of driving element
It is initialized with drain electrode, to increase the service life of driving transistor, while also being prepared for the sampling of threshold voltage.
In phase III T3, the scanning signal that is provided due to the first scan line S1 becomes high level from low level, and described the
Two thin film transistor (TFT) M2 and the 5th thin film transistor (TFT) M5 are become ending from conducting, are stopped to the Organic Light Emitting Diode OLED
The initialization of anode, since the 4th scan line S4 scanning signals provided become low level from high level, the 4th film is brilliant
Data voltage Vdata is transmitted to one end of the first capacitance C1 by the M4 conductings of body pipe, data line DATA.
In fourth stage T4, the scanning signal that is provided due to third scan line S3 becomes high level from low level, and described the
One thin film transistor (TFT) M1 becomes ending from being connected, and stops the initialization to the 6th thin film transistor (TFT) M6, due to the 5th scanning
The scanning signal that line S5 is provided becomes low level from high level, and the 7th thin film transistor (TFT) M7 becomes to be connected by ending, and first
The first supply voltage VDD that power supply ELVDD is provided is transmitted to the source electrode of the 6th thin film transistor (TFT) M6, the second node N2
Via the 6th thin film transistor (TFT) M6 and the 7th thin film transistor (TFT) M7, first that the first power supply ELVDD is provided
The potential difference of the threshold voltage of supply voltage VDD and the 6th thin film transistor (TFT) M6 is sampled, and by the first supply voltage
The potential difference VDD-Vth of VDD and threshold voltage is provided to second node N2.Wherein, Vth is the 6th thin film transistor (TFT) M6
The absolute value of threshold voltage.
In the process, data voltage Vdata can be to the first capacitance C1 chargings, until second node N2 is i.e. described when the 6th
The grid voltage Vg6 of thin film transistor (TFT) M6 reaches VDD-Vth, and the first capacitance C1 stops charging, to complete to the 6th film crystalline substance
The sampling of the threshold voltage of body pipe M6.
In the 5th stage T5, since the second scan line S2 scanning signals provided are jumped in the 5th stage T5 from low level
To high level, the second capacitance C2 is according to the variable quantity of the second scan line S2 scanning signals provided and described at this time
The combination ratio { Cb/ (Cb+Cst) } of one capacitance C1 and the second capacitance C2 boosts to the second node N2 so that described
The grid voltage Vg6 of the voltage of second node N2, that is, the 6th thin film transistor (TFT) M6 is increased, to reduce the 6th film crystalline substance
The leakage current of body pipe M6, and then improve and display contrast.On the other hand, the scanning signal provided due to the first scan line S1 by
High level becomes low level, and the scanning signal that the 4th scan line S4 is provided becomes high level from low level, therefore described second thin
Film transistor M2 and the 5th thin film transistor (TFT) M5 are become being connected from cut-off, while the 4th thin film transistor (TFT) M4 is become by conducting
For cut-off, the voltage of the first node N1 becomes initialization voltage Vref from data voltage Vdata at this time.Due to described first
The voltage of capacitance C1 will not be mutated, so the grid voltage Vg6 of the 6th thin film transistor (TFT) M6 will follow the first node N1
Voltage change and change.
It can be seen from the above, the voltage variety of the first node N1 is Vdata-Vref.Therefore, the 6th film is brilliant
The grid voltage Vg6 of body pipe M6 is calculated by following formula:
Vg6=VDD-Vth- (Vdata-Vref) formula 1;
Wherein, Vth is the absolute value of the threshold voltage of the 6th thin film transistor (TFT) M6, and VDD is first power supply
The first supply voltage that ELVDD is provided, Vdata are the data voltage that the data line DATA is provided, and Vref is third electricity
The initialization voltage that source provides.
Since the source voltage of the 6th thin film transistor (TFT) M6 at this time is equal to first that the first power supply ELVDD is provided
Supply voltage VDD, therefore the gate source voltage Vsg6 of the 6th thin film transistor (TFT) M6, i.e., the grid of the described 6th thin film transistor (TFT) M6
Voltage difference between pole and source electrode can be calculated by following formula:
Vsg6=VDD- (VDD-Vth- (Vdata-Vref)) formula 2;
It can be obtained by formula 1 and formula 2:
Vsg6-Vth=Vdata-Vref formulas 3;
In the process, the 6th thin film transistor (TFT) M6 conductings and output current, drive the Organic Light Emitting Diode
OLED shines, and the Organic Light Emitting Diode OLED sends out the light proportional to the electric current provided.Flow through the organic light emission two
The calculation formula of the electric current Ion of pole pipe OLED is:
Ion=K × (Vsg6-Vth)2Formula 4;
Wherein, K is electron mobility, breadth length ratio, the product of unit-area capacitance three of thin film transistor (TFT).
It can be obtained by formula 3 and formula 4:
Ion=K × (Vdata-Vref))2
Expression formula based on above-mentioned formula is it is found that flow through the electric current and power supply electricity of the Organic Light Emitting Diode OLED
Pressure and the 6th thin film transistor (TFT) M6 threshold voltage it is all not related, only with data voltage Vdata, initialization voltage Vref and
Constant K is related.Even if the threshold voltage of the 6th thin film transistor (TFT) M6, there are deviation, power supply cabling impedance influences are actually reached picture
The supply voltage of plain circuit will not impact the electric current Ion for flowing through the Organic Light Emitting Diode OLED.Therefore, it uses
The pixel circuit 20 and its driving method can avoid bright caused by due to threshold voltage deviation and power supply walk line impedence completely
Spend uneven phenomenon.Meanwhile overshoot current is eliminated, increase the Organic Light Emitting Diode OLED and as the of driving element
The service life of six thin film transistor (TFT) M6.
【Embodiment two】
Referring to FIG. 4, its structural schematic diagram for the pixel circuit of the embodiment of the present invention two.As shown in figure 4, the pixel
Circuit 30 includes:First film transistor M1 is connected between third node N3 and third power supply VREF, and grid is connected to
Three scan line S3;Second thin film transistor (TFT) M2, is connected between third node N3 and the anode of Organic Light Emitting Diode, grid
It is connected to the first scan line S1;Third thin film transistor (TFT) M3 is connected between second node N2 and third node N3, and grid connects
It is connected to the second scan line S2;4th thin film transistor (TFT) M4 is connected between data line DATA and first node N1;5th film is brilliant
Body pipe M5 is connected between first node N1 and third power supply VREF, and grid is connected to the first scan line S1;6th film is brilliant
Body pipe M6, is connected between the drain electrode of the 7th thin film transistor (TFT) M7 and third node N3, and grid is connected to second node N2;The
Seven thin film transistor (TFT) M7 are connected between the first power supply ELVDD and the source electrode of the 6th thin film transistor (TFT) M6;First capacitance C1, even
It is connected between first node N1 and second node N2, for storing signal.
Specifically, the pixel circuit 30 includes all features of pixel circuit 20 described in embodiment one, the present embodiment
Difference lies in the pixel circuit 30 is only connect with 4 scan lines with embodiment one.Wherein, the 4th thin film transistor (TFT)
The grid of M4 is not connect with the 4th scan line S4, is connect with the second scan line S2, the second scan line S2 for
Write-in while control threshold voltage sample for controlling data voltage Vdata;The grid of the 7th thin film transistor (TFT) M7
It does not connect with the 5th scan line S5, is connect with the 4th scan line S4, the 4th scan line S4 is used in initialization
The overshoot current of driving transistor is controlled in the process.
Incorporated by reference to reference to figure 3 and Fig. 5, the first scan line S1, the second scan line S2 and third scan line in the present embodiment
The timing requirements for the scanning signal that S3 is provided and the first scan line S1, the second scan line S2 and the third scan line in embodiment one
The timing requirements for the scanning signal that S3 is provided are identical, and this is no longer going to repeat them, and particular content refers to pixel in embodiment one
The scanning signal that the first stage T1 to the 5th stage T5 of the driving method of circuit, the 4th scan line S4 of the present embodiment are provided
Timing requirements it is identical as the timing requirements of scanning signal that the 5th scan line S5 in embodiment one is provided.
In the present embodiment, the 4th thin film transistor (TFT) M4 and third thin film transistor (TFT) M3 shares the second scan line
S2, often row pixel only need 4 scan lines, be accordingly used in provide scanning signal scan line can reduce.The picture of the present embodiment
Plain circuit 30 is suitable for high-resolution product.
【Embodiment three】
Referring to FIG. 6, its structural schematic diagram for the pixel circuit of the embodiment of the present invention three.As shown in fig. 6, the pixel
Circuit 40 includes:First film transistor M1 is connected between third node N3 and third power supply VREF, and grid is connected to
Three scan line S3;Second thin film transistor (TFT) M2, is connected between third node N3 and the anode of Organic Light Emitting Diode, grid
It is connected to the first scan line S1;Third thin film transistor (TFT) M3 is connected between second node N2 and third node N3, and grid connects
It is connected to the second scan line S2;4th thin film transistor (TFT) M4 is connected between data line DATA and first node N1;5th film is brilliant
Body pipe M5 is connected between first node N1 and third power supply VREF, and grid is connected to the first scan line S1;6th film is brilliant
Body pipe M6, is connected between the drain electrode of the 7th thin film transistor (TFT) M7 and third node N3, and grid is connected to second node N2;The
Seven thin film transistor (TFT) M7 are connected between the first power supply ELVDD and the source electrode of the 6th thin film transistor (TFT) M6;First capacitance C1, even
It is connected between first node N1 and second node N2, for storing signal.
Specifically, the pixel circuit 40 includes all features of pixel circuit 20 described in embodiment one, the present embodiment
Difference lies in the 4th thin film transistor (TFT) M4 and the 7th thin film transistor (TFT) M7 is that N-type film is brilliant with embodiment one
Body pipe (TFT), the pixel circuit 40 are only connect with 3 scan lines.Wherein, the grid of the 4th thin film transistor (TFT) M4 is not
It connect with the 4th scan line S4, but is connect with the first scan line S1, the first scan line S1 is for controlling initialization
Write-in for controlling data voltage Vdata simultaneously;The grid of the 7th thin film transistor (TFT) M7 is not and the 5th scan line S5
Connection, but connect with third scan line S3, the third scan line S3 is for controlling the Organic Light Emitting Diode OLED
While the initialization of anode for control initialization during driving transistor overshoot current.
Incorporated by reference to reference to figure 3 and Fig. 7, the first scan line S1, the second scan line S2 and third scan line in the present embodiment
The timing requirements for the scanning signal that S3 is provided and the first scan line S1, the second scan line S2 and the third scan line in embodiment one
The timing requirements for the scanning signal that S3 is provided are identical, and this is no longer going to repeat them, and particular content refers to pixel in embodiment one
The first stage T1 to the 5th stage T5 of the driving method of circuit.
In the present embodiment, the 4th thin film transistor (TFT) M4 and the 7th thin film transistor (TFT) M7 is N-type film crystal
It manages (TFT), therefore the 4th thin film transistor (TFT) M4 can be total with the second thin film transistor (TFT) M2 and the 5th thin film transistor (TFT) M5
With the first scan line S1, often row pixel only needs 3 scan lines, and the scan line for being consequently for providing scanning signal can be greatly
It reduces.Therefore the pixel circuit 40 of the present embodiment is suitable for the product of higher resolution.
It should be noted that each embodiment is described by the way of progressive in this specification, each embodiment emphasis is said
Bright is all difference from other examples, and just to refer each other for identical similar portion between each embodiment.For reality
For applying pixel circuit disclosed in example, due to corresponding with the driving method of pixel circuit disclosed in embodiment, so description
Fairly simple, reference may be made to the description of the method.
Correspondingly, the present invention also provides a kind of organic light emitting display, the organic light emitting display includes institute as above
The pixel circuit stated.Specific to please refer to above, details are not described herein again.
To sum up, in pixel circuit provided by the invention and its driving method and organic light emitting display, the pixel electricity
Road initializes the anode of the Organic Light Emitting Diode by the first film transistor and the second thin film transistor (TFT),
By the first film transistor and third thin film transistor (TFT) to be used as the 6th thin film transistor (TFT) of driving element grid and
Drain electrode is initialized, while eliminating the overshoot current in initialization procedure by the 7th thin film transistor (TFT), is thus increased
The service life of the Organic Light Emitting Diode and the 6th thin film transistor (TFT), moreover, the 6th film as driving element is brilliant
The electric current that body pipe is exported is unrelated with the threshold voltage of the 6th thin film transistor (TFT) and the impedance of power supply cabling, thus can avoid by
Brightness disproportionation caused by impedance difference of the threshold voltage deviation of thin film transistor (TFT) with power supply cabling, and then improve display
Show quality.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (10)
1. a kind of pixel circuit, which is characterized in that including:
First film transistor is connected between third node and third power supply, and grid is connected to third scan line;
Second thin film transistor (TFT) is connected between third node and the anode of Organic Light Emitting Diode, and grid is connected to first
Scan line;
Third thin film transistor (TFT) is connected between second node and third node, and grid is connected to the second scan line;
4th thin film transistor (TFT), is connected between data line and first node;
5th thin film transistor (TFT) is connected between first node and third power supply, and grid is connected to the first scan line;
6th thin film transistor (TFT) is connected between the drain electrode and third node of the 7th thin film transistor (TFT), and grid is connected to second
Node;
7th thin film transistor (TFT) is connected between the first power supply and the source electrode of the 6th thin film transistor (TFT);
First capacitance, is connected between first node and second node, for storing signal.
2. pixel circuit as described in claim 1, which is characterized in that further include the second capacitance, second capacitance connection exists
Between second node and the second scan line, for responding the scanning signal that second scan line is provided with to second section
Voltage at point boosts.
3. pixel circuit as described in claim 1, which is characterized in that first power supply and second source are as described organic
The driving power of light emitting diode, the third power supply are used for grid, the 6th film for the 6th thin film transistor (TFT)
The anode of the drain electrode of transistor and the Organic Light Emitting Diode provides initialization level.
4. pixel circuit as claimed in claim 2, which is characterized in that it includes first to drive the scan period of the pixel circuit
Stage to the 5th stage;
The anode of the Organic Light Emitting Diode is initialized in the first stage between the phase III, and the described 6th is thin
The grid of film transistor and drain electrode are initialized in the second stage, and the threshold voltage of the 6th thin film transistor (TFT) is in institute
Fourth stage is stated to be sampled;The grid voltage of 6th thin film transistor (TFT) is carried out in the 5th stage by second capacitance
Boosting.
5. pixel circuit as claimed in claim 4, which is characterized in that the 7th thin film transistor (TFT) is in the first stage one
Directly it is in cut-off state.
6. pixel circuit as described in claim 1, which is characterized in that the 6th thin film transistor (TFT) is provided to organic hair
The initialization voltage that data voltage that the electric current of optical diode is provided by the data line and the third power supply provide determines, and
It is unrelated with the supply voltage and the threshold voltage of the 6th thin film transistor (TFT) that first power supply and second source provide.
7. a kind of driving method of pixel circuit as described in any one of claim 2 to 6, which is characterized in that the scan period
It is divided into first stage, second stage, phase III, fourth stage and the 5th stage, wherein
In the first stage, the scanning signal that the first scan line provides keeps low level, the second scan line and the 4th scan line to provide
Scanning signal keep high level, third scan line provide scanning signal low level is become from high level, the 5th scan line carries
The scanning signal of confession becomes high level by low level, and the first film transistor becomes being connected from ending, the 7th film
Transistor becomes ending from being connected, by the first film transistor and the second thin film transistor (TFT) to the organic light-emitting diodes
The anode of pipe is initialized;
In second stage, scanning signal that the first scan line and third scan line provide keeps low level, the 4th scan line and the
The scanning signal that five scan lines provide keeps high level, the scanning signal that the second scan line provides to become low level from high level,
The third thin film transistor (TFT) becomes being connected from ending, by the first film transistor and third thin film transistor (TFT) to described
The grid of 6th thin film transistor (TFT) and drain electrode are initialized;
In the phase III, the scanning signal that the second scan line and third scan line provide keeps low level, the 5th scan line to provide
Scanning signal keep high level, the first scan line provide scanning signal high level is become from low level, the 4th scan line carries
The scanning signal of confession becomes low level from high level, and second thin film transistor (TFT) and the 5th thin film transistor (TFT) are become from conducting
Cut-off, the 4th thin film transistor (TFT) conducting stop the initialization to the Organic Light Emitting Diode anode and by data voltage
It is transmitted to one end of the first capacitance;
In fourth stage, the scanning signal that the first scan line provides keeps high level, the second scan line and the 4th scan line to provide
Scanning signal keep low level, third scan line provide scanning signal high level is become from low level, the 5th scan line carries
The scanning signal of confession becomes low level from high level, and the first film transistor becomes ending from being connected, the 7th film
Transistor becomes to be connected by ending, and stops the initialization to the 6th thin film transistor (TFT) and starts to the 6th film crystal
The threshold voltage of pipe is sampled;
In the 5th stage, the scanning signal that the second scan line provides becomes high level from low level, and third thin film transistor (TFT) is by leading
Logical to become ending, second capacitance boosts to the second node at this time;After the cut-off of third thin film transistor (TFT), first
The scanning signal that scan line provides becomes low level from high level, while the scanning signal that the 4th scan line provides is become by low level
For high level, second thin film transistor (TFT) and the 5th thin film transistor (TFT) are become being connected from cut-off, the 4th film crystal
Pipe becomes ending from being connected, and the 6th thin film transistor (TFT) conducting, output current is to drive the organic light-emitting diode.
8. the driving method of pixel circuit as claimed in claim 7, which is characterized in that in the first stage, by described
Seven thin film transistor (TFT)s remain cut-off state.
9. the driving method of pixel circuit as claimed in claim 7, which is characterized in that when the first film transistor and
When two thin film transistor (TFT)s are connected jointly, the anode of the Organic Light Emitting Diode is initialized by the third power supply;
It is thin to the described 6th by the third power supply when the first film transistor and third thin film transistor (TFT) are connected jointly
The grid of film transistor and drain electrode are initialized.
10. a kind of organic light emitting display, which is characterized in that including:Such as pixel according to any one of claims 1 to 6 electricity
Road.
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CN106652903B (en) | 2017-03-03 | 2018-10-23 | 京东方科技集团股份有限公司 | A kind of OLED pixel circuit and its driving method, display device |
CN106652904B (en) | 2017-03-17 | 2019-01-18 | 京东方科技集团股份有限公司 | Pixel-driving circuit and its driving method, display device |
CN107358920B (en) | 2017-09-08 | 2019-09-24 | 京东方科技集团股份有限公司 | Pixel-driving circuit and its driving method and display device |
CN107516489A (en) * | 2017-10-24 | 2017-12-26 | 深圳市华星光电半导体显示技术有限公司 | OLED pixel drive circuit and its driving method |
US10460665B2 (en) | 2017-10-24 | 2019-10-29 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | OLED pixel driving circuit and driving method thereof |
CN109872692B (en) * | 2017-12-04 | 2021-02-19 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof and display device |
CN107871471B (en) * | 2017-12-08 | 2020-04-10 | 京东方科技集团股份有限公司 | Pixel driving circuit, driving method thereof and display device |
CN108735152B (en) * | 2018-05-28 | 2019-12-24 | 昆山国显光电有限公司 | Driving circuit, pixel circuit, driving method thereof and display device |
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CN109166522B (en) | 2018-09-28 | 2022-10-18 | 昆山国显光电有限公司 | Pixel circuit, driving method thereof and display device |
CN112309332B (en) * | 2019-07-31 | 2022-01-18 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof, display substrate and display panel |
CN110767163B (en) * | 2019-11-08 | 2021-01-26 | 京东方科技集团股份有限公司 | Pixel circuit and display panel |
US20220335880A1 (en) * | 2019-12-19 | 2022-10-20 | Chongqing Konka Photoelectric Technology Research Institute Co., Ltd. | Electroluminescence Display, Pixel Compensating Circuit and Voltage Compensating Method Based on Pixel Compensating Circuit |
EP4131233A4 (en) * | 2020-03-25 | 2023-05-24 | BOE Technology Group Co., Ltd. | Display panel and display device |
CN113593466B (en) * | 2021-05-18 | 2024-02-09 | 昆山国显光电有限公司 | Display panel driving method, display device and storage medium |
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