CN105762138A - Integrated millimeter wave chip package structure - Google Patents
Integrated millimeter wave chip package structure Download PDFInfo
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- CN105762138A CN105762138A CN201410778230.0A CN201410778230A CN105762138A CN 105762138 A CN105762138 A CN 105762138A CN 201410778230 A CN201410778230 A CN 201410778230A CN 105762138 A CN105762138 A CN 105762138A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15182—Fan-in arrangement of the internal vias
- H01L2924/15184—Fan-in arrangement of the internal vias in different layers of the multilayer substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
- H01L2924/15321—Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The present invention discloses an integrated millimeter wave chip package structure which comprises a middleware layer structure, a millimeter wave chip, and a substrate. The middleware layer structure comprises at least one antenna pattern and at least one plated through hole structure which goes through the middleware layer structure and is connected to the antenna pattern. The millimeter wave chip is electrically connected to an above or below antenna pattern through the plated through hole structure.
Description
Technical field
The present invention relates to a kind of encapsulating structure, relate to a kind of integrated millimeter wave chip-packaging structure.
Background technology
Being applied in the consumer electronics show of the Jin Liangnian U.S. of wireless receiver becomes focus, declares the epoch arriving of wireless gigabit alliance (WirelessGigabitAlliance, WiGi) and the application of wireless high image quality (WirelessHD) standard.Domestic and international educational circles and big factory also develop the chip of millimeter wave frequency band successively；But, the encapsulation of this frequency range chip but not yet has total solution.
General routing (Wire-bond) encapsulation is not suitable for radio frequency chip encapsulation, and use low temperature co-fired multi-layer ceramics (Low-TemperatureCo-firedCeramics, and flip-chip packaged LTCC), then because technological process causes substrate to shrink and processing technology usefulness is not enough, too small plus institute's chip pad size for package and spacing, cause assembling yield too low.Therefore, current pole need to provide a kind of encapsulating structure that can effectively integrate radio frequency chip and antenna.
Summary of the invention
It is an object of the invention to provide a kind of encapsulating structure that can effectively integrate radio frequency chip and antenna, the encapsulation of vertical integration antenna and rfic chip, the antenna that design is positioned at different layers is vertical corresponding up and down with the position of radio frequency chip, transmission range between the two is minimized, reduces the high-frequency signal loss that between antenna and radio frequency chip, transmission path is caused.
For reaching above-mentioned purpose, the present invention can provide a kind of integrated millimeter wave chip-packaging structure, at least includes intermediary layer structure, chip and substrate.This intermediary layer structure includes the first metal layer, the second metal level, insulation support layer between this first, second metal level, and this intermediary layer structure includes at least one first electroplating ventilating hole structure, this the first electroplating ventilating hole structure runs through this first metal layer, this insulation support layer and this second metal level, and electrically connects this first metal layer and this second metal level.This chip is linked to this intermediary layer structure, and this chip has active face and is positioned at the engagement pad on this active face.This substrate is linked to this intermediary layer structure.This substrate at least includes an insulating barrier and the 3rd metal level being positioned on insulating barrier, 3rd metal level is positioned at this substrate side towards this intermediary layer structure, this the first metal layer of this intermediary layer structure at least includes an antenna pattern, this antenna pattern is positioned at the top of this chip, and this chip electrically connects this antenna pattern by this first electroplating ventilating hole structure of this intermediary layer structure.In another embodiment, this antenna pattern may be provided at lower section.
In one embodiment of this invention, above-mentioned this substrate in integrated millimeter wave chip-packaging structure has a up concave type bug hole, this chip buried-in in this up concave type bug hole this active face of this chip towards this second metal level of this intermediary layer structure, this chip is linked to this intermediary layer structure by the projection physical property between this engagement pad and this second metal level, and this chip electrically connects this antenna pattern by this projection and this first electroplating ventilating hole structure.
In another embodiment of the invention, above-mentioned this substrate in integrated millimeter wave chip-packaging structure has an opening and exposes this chip, this active face of this chip is towards this second metal level of this intermediary layer structure, this chip is linked to this intermediary layer structure by the projection physical property between this engagement pad and this second metal level, and this chip electrically connects this antenna pattern by this projection and this first electroplating ventilating hole structure.
In one embodiment of this invention, above-mentioned this substrate in integrated millimeter wave chip-packaging structure also includes the 4th metal level and the second electroplating ventilating hole structure, 4th metal level is positioned at this insulating barrier another side relative to the 3rd metal level, and this second electroplating ventilating hole structure runs through this substrate and connects the 3rd metal level of these insulating barrier both sides and the 4th metal level.
In one embodiment of this invention, above-mentioned integrated millimeter wave chip-packaging structure also includes another substrate and is linked to this substrate, this another substrate includes the soldered ball being placed between this substrate and this another substrate, and this another substrate makes this substrate link with this another substrate physical property and be electrical connected by this soldered ball.
In one embodiment of this invention, above-mentioned this intermediary layer structure in integrated millimeter wave chip-packaging structure also includes one layer or more wiring layer, among this insulation support layer and between this antenna pattern and this second metal level.
In one embodiment of this invention, the above-mentioned chip in integrated millimeter wave chip-packaging structure is radio frequency chip.
Based on above-mentioned, antenna pattern is arranged in above or below chip by the present invention, in recycling, buried via hole electrically connects antenna and chip with via, and then can the encapsulation of integral antenna and chip by this vertical encapsulation architecture, and reduce the signal transmission distance between antenna and chip, reach to reduce the purpose of signal transmission attenuation.
For the features described above of the present invention and advantage can be become apparent, special embodiment below, and coordinate appended accompanying drawing to be described in detail below.
Accompanying drawing explanation
Fig. 1 is the generalized section of a kind of integrated millimeter wave chip-packaging structure of one embodiment of the invention；
Fig. 2 is the generalized section of a kind of integrated millimeter wave chip-packaging structure of another embodiment of the present invention；
Fig. 3 is the generalized section of a kind of integrated millimeter wave chip-packaging structure of another embodiment of the present invention；
Fig. 4 is the generalized section of a kind of integrated millimeter wave chip-packaging structure of another embodiment of the present invention；
Fig. 5 is the generalized section of a kind of integrated millimeter wave chip-packaging structure of another embodiment of the present invention；
Fig. 6 is the generalized section of a kind of integrated millimeter wave chip-packaging structure of another embodiment of the present invention；
Fig. 7 is the partial top schematic diagram of a kind of integrated millimeter wave chip-packaging structure of one embodiment of the invention；
Fig. 8 is the partial top schematic diagram of another kind of millimeter wave chip-packaging structure；
Fig. 9 is millimeter wave antenna gain guide wavelength (GuideWavelength) figure to via length；
Figure 10 is millimeter wave antenna radiation efficiency frequency response chart.
Symbol description
10,20,30,40,50,60: encapsulating structure
100,400: intermediary layer structure
102: the first metal layer
104: the second metal levels
106,406: insulation support layer
108,408: wiring layer
109,409: metal filling perforation structure
110,110A: antenna pattern
112,114,214,218,302: weld pad
120,220,420: electroplating ventilating hole structure
140: mucigel
150: millimeter wave chip
150a: active face
152: engagement pad
160,230: projection
180: wiring
200,200A, 200B, 300: substrate
202: up concave type bug hole
203: opening
210: insulating barrier
212: the three metal levels
216: the four metal levels
310: soldered ball
402: upper metal level
404: lower metal layer
Detailed description of the invention
Millimeter wave refers to the electric wave that wavelength is 1～10 millimeter of scope, if being converted into frequency, about 30G～300GHz scope；Therefore, millimeter wave chip namely refers to the wavelength rf chip in millimeter wave scope.In following embodiment, similar or similar elements, part or structure will represent it with identical label.Order or upper inferior description in its literary composition are to be not limited to its relative position or scope in order to conveniently to understand.
Fig. 1 is the generalized section of a kind of integrated millimeter wave chip-packaging structure according to one embodiment of the invention.
With reference to Fig. 1, integrated millimeter wave chip-packaging structure 10, including intermediary layer structure 100, millimeter wave chip 150 and substrate 200.Intermediary layer structure 100 includes the first metal layer the 102, second metal level 104, an insulation support layer 106 between this first, second metal level 102/104 and at least one electroplating ventilating hole structure (platedthroughhole) 120.This electroplating ventilating hole structure 120 runs through this intermediary layer structure 100 (running through this first metal layer 102, this insulation support layer 106 and this second metal level 104), electrically connects this first metal layer 102 and this second metal level 104.This first metal layer 102 at least includes an antenna pattern 110.And this second metal level 104 can be a line layer include multiple weld pads 112 and weld pad 114.The generation type of electroplating ventilating hole structure 120 includes first etching or laser drill forms through hole re-plating and forms electroplating ventilating hole structure to reach.
Being compared to encapsulating structure utilizes wire or wiring to connect antenna pattern, the available electroplating ventilating hole structure (that is via) of the integrated millimeter wave chip-packaging structure of the present invention electrically connects antenna pattern, namely connects in the way of via and signal is fed into antenna.
Referring to Fig. 1, this intermediary layer structure 100 also includes wiring layer 108 and a metal filling perforation structure 109, this wiring layer 108 is among this insulation support layer 106 and between this antenna pattern 110 and the second metal level 104, and this metal filling perforation structure 109 electrically connects this wiring layer 108 and this weld pad 114 between this wiring layer 108 with this weld pad 114.Wherein this wiring layer 108 is not connected with this electroplating ventilating hole structure 120.This wiring layer 108 can as ground plane, ground plane also can shielded function, be subject to too much electromagnetic interference (EMI) protecting millimeter wave chip 150 to avoid, and affect the operation of the integrated millimeter wave chip-packaging structure of the present invention undeservedly.It can be multi-layer configuration that the present invention does not limit wiring layer as monolayer, by the configuration of more multi-layered wiring layer, it is possible to help this encapsulating structure integrate more multicomponent or make the wiring of encapsulating structure more flexible.
This substrate 200 at least includes an insulating barrier 210 and the 3rd metal level 212 being positioned on insulating barrier 210, and the 3rd metal level 212 is positioned at this substrate 200 side towards this second metal level 104 and includes multiple weld pad 214.This substrate 200 has a up concave type bug hole 202, and is embedded in this up concave type bug hole 202 in this millimeter wave chip 150 to be adhesively secured in the depression of this substrate 200 by a mucigel 140 or mucigel 140 replaces with air.This millimeter wave chip 150 has an active face 150a and the engagement pad 152 being positioned on active face 150a, and it is embedded in this up concave type bug hole 202 in this millimeter wave chip 150, but its active face 150a is towards the second metal level 104 of this intermediary layer structure 100, this millimeter wave chip 150, by the projection 160 between the second metal level 104 and engagement pad 152 or stannum ball or gold goal, is electrically connected engagement pad 152 and this second metal level 104 (weld pad 112) of this chip.Additionally, this antenna pattern 110 is by this electroplating ventilating hole structure 120 and projection 160 (weld pad 112 and engagement pad 152), and electrically connect this antenna pattern 110 and this millimeter wave chip 150.Herein, this substrate 200 is such as a printed circuit board (PCB) or ceramic substrate.
With reference to Fig. 1, this antenna pattern 110 can be located at the top of this millimeter wave chip 150.Herein, whether top or lower section described in literary composition, look closely the placement direction of this encapsulating structure and determine, but and do not interfere with the understanding of this field person, mainly the position of this antenna pattern need to the aligned in position of chip configuration, substantially the pattern distributed areas of this antenna pattern 110 should equal to or more than the size of its lower chip, but both positions are corresponding wholly or in part.
With reference to Fig. 1, this intermediary layer structure 100 coincides on this substrate 200, this intermediary layer structure 100 is by being positioned at projection 230 between the second metal level 104 (weld pad 114) and the 3rd metal level 212 (weld pad 214) or stannum ball or gold goal, and electrically connects the second metal level 104 and the 3rd metal level 212.Can also include a primer layer 130 between this intermediary layer structure 100 and this substrate 200, help the set between both and projection.It is to say, millimeter wave chip 150 reaches to electrically connect by the projection 160 between the weld pad 114 and chip of the second metal level 104 and the projection 230 between the second metal level 104 and the 3rd metal level 212 with substrate 200.
Therefore, antenna pattern 110 is configured at the top of millimeter wave chip 150 by the integrated millimeter wave chip-packaging structure 10 shown in Fig. 1, and this antenna pattern 110 and this millimeter wave chip 150 is electrically connected by electroplating ventilating hole structure 120, and vertical integration formula millimeter wave chip-packaging structure 10, when without routing, it is greatly shortened signal transmission distance between antenna pattern 110 and this millimeter wave chip 150.
Fig. 2 is the generalized section of a kind of integrated millimeter wave chip-packaging structure according to another embodiment of the present invention.Referring to Fig. 2, integrated millimeter wave chip-packaging structure 20, including intermediary layer structure 100, millimeter wave chip 150, substrate 200A and substrate 300.Herein, except identical intermediary layer structure 100, the substrate 200 of this substrate 200A and Fig. 1 of Fig. 2 is quite similar, but substrate 200A includes insulating barrier 210 and divides the 3rd metal level 212 and the 4th metal level 216 being positioned at insulating barrier 210 two sides.3rd metal level 212 includes multiple weld pad 214, and the 4th metal level 216 includes multiple weld pad 218.Run through this substrate 200A additionally, substrate 200A also includes electroplating ventilating hole structure 220 and connect the 3rd metal level 212 and the 4th metal level 216 of insulating barrier 210 both sides.
This substrate 300 includes the soldered ball 310 being arranged on weld pad 302, and this substrate 300 passes through the weld pad 218 of soldered ball 310 and this substrate 200A being arranged on weld pad 302, and makes this substrate 200A link with this substrate 300 physical property and be electrical connected.Herein, this substrate 200A is such as a bearing substrate, and this substrate 300 is a printed circuit board (PCB), therefore millimeter wave chip 150 can be made further to be electrically connected to printed circuit board (PCB) by projection 160,230 and soldered ball 310.
Fig. 3 is the generalized section of a kind of integrated millimeter wave chip-packaging structure according to another embodiment of the present invention.Referring to Fig. 3, integrated millimeter wave chip-packaging structure 30, including intermediary layer structure 100, millimeter wave chip 150, substrate 200B and substrate 300.Herein, the substrate 200A of this substrate 200B and Fig. 2 is quite similar, although substrate 200A has a up concave type bug hole, but substrate 200B then has an opening 203 exposes this millimeter wave chip 150, this millimeter wave chip 150 is by the projection 160 between the second metal level 104 and chip contact pad 152, and reaches physical bonds with intermediary layer structure 100.Antenna pattern 110 is configured at the top of millimeter wave chip 150 by integrated millimeter wave chip-packaging structure 30, and this antenna pattern 110 and this millimeter wave chip 150 is electrically connected by electroplating ventilating hole structure 120, and vertical integration formula millimeter wave chip-packaging structure 30, shorten signal transmission distance between antenna pattern 110 and this millimeter wave chip 150.
Fig. 4 is the generalized section of a kind of integrated millimeter wave chip-packaging structure according to another embodiment of the present invention.Referring to Fig. 4, integrated millimeter wave chip-packaging structure 40, including intermediary layer structure 100, millimeter wave chip 150, substrate 200 and another intermediary layer structure 400.Herein, except the intermediary layer structure 100 identical with Fig. 1 and substrate 200, the millimeter wave chip-packaging structure 40 of Fig. 4 includes another intermediary layer structure 400 between this substrate 200 and this intermediary layer structure 100, and this intermediary layer structure 400 also links with this intermediary layer structure 100 with this substrate 200 that projection 160,230 is upper and lower with it.This intermediary layer structure 400 is quite similar with this intermediary layer structure 100 of Fig. 1, this intermediary layer structure 400 include metal level 402, lower metal layer 404, between insulation support layer 406, wiring layer 408, metal filling perforation structure 409 and at least one electroplating ventilating hole structure 420.The upper metal level 402 of this intermediary layer structure 400 can be line layer, but can also also include an antenna pattern, looks closely product design and determines.And lower metal layer 404 can be a line layer includes multiple weld pad.This intermediary layer structure 400 electrically connects intermediary layer structure 100, millimeter wave chip 150 and substrate 200 by projection 160,230.Collocation projection 160 and metal filling perforation structure 409, antenna pattern 110 is electrical connected with millimeter wave chip 150 by electroplating ventilating hole structure 120,420.The millimeter wave chip-packaging structure 40 of Fig. 4 include another intermediary layer structure 400 can integrated passive element or antenna pattern or matching network to encapsulating structure.
Fig. 5 is the generalized section of a kind of integrated millimeter wave chip-packaging structure according to another embodiment of the present invention.Referring to Fig. 5, integrated millimeter wave chip-packaging structure 50, including intermediary layer structure 100, millimeter wave chip 150, substrate 200A, substrate 300 and another intermediary layer structure 400.Herein, integrated millimeter wave chip-packaging structure 50 is rather similar with integrated millimeter wave chip-packaging structure 20, except integrated millimeter wave chip-packaging structure 50 includes another intermediary layer structure 400 between this substrate 200A and this intermediary layer structure 100, this intermediary layer structure 400 also links with this intermediary layer structure 100 with this substrate 200A that projection 160,230 is upper and lower with it.Similarly, this substrate 300 is by being arranged in the soldered ball 310 on weld pad 302, and makes this substrate 200A link with this substrate 300 physical property and be electrical connected.Herein, this substrate 200A is such as a bearing substrate, and this substrate 300 is a printed circuit board (PCB), therefore millimeter wave chip 150 can be made further to be electrically connected to printed circuit board (PCB) by projection 160,230 and soldered ball 310.
Fig. 6 is the generalized section of a kind of integrated millimeter wave chip-packaging structure according to another embodiment of the present invention.Referring to Fig. 6, integrated millimeter wave chip-packaging structure 60, including intermediary layer structure 100, millimeter wave chip 150, substrate 200B, substrate 300 and another intermediary layer structure 400.Herein, integrated millimeter wave chip-packaging structure 60 is rather similar with integrated millimeter wave chip-packaging structure 50, although but the substrate 200A of millimeter wave chip-packaging structure 50 has a up concave type bug hole, but the substrate 200B of millimeter wave chip-packaging structure 60 has an opening 203 exposes this millimeter wave chip 150, and this millimeter wave chip 150 reaches physical bonds by projection 160 with intermediary layer structure 400.Antenna pattern 110 is configured at the top of millimeter wave chip 150 by integrated millimeter wave chip-packaging structure 60, collocation projection 160 and electroplating ventilating hole structure 120,420 and electrically connect this antenna pattern 110 and this millimeter wave chip 150, therefore vertical integration formula millimeter wave chip-packaging structure 60.
The integrated millimeter wave chip-packaging structure of Fig. 7 can be considered as the partial top schematic diagram of the antenna pattern 110 for Fig. 1 or Fig. 3.Referring to Fig. 7, antenna pattern 110 and electroplating ventilating hole structure 120 are directly connected to, and adopt vertical feed-in mode, therefore needed for forming antenna pattern, layout area is less.
Fig. 8 is the schematic top plan view of another kind of millimeter wave chip-packaging structure.Antenna pattern 110 relative to Fig. 7 is directly connected to electroplating ventilating hole structure 120, the antenna pattern 110A of Fig. 8, it is possible to still collocation uses wiring 180 to reach electrical connection from lateral feed-in.
In the foregoing embodiments of the present invention, although only show a chip or single antenna pattern, but the scope of the present invention is not limited to this, integrated encapsulating structure can configure multiple chip or multiple antenna pattern.And in those embodiments, millimeter wave chip 150 can be radio frequency chip, first, second, third or the 4th the material such as metal level can include for aluminum, copper, nickel, gold and or the metal such as silver.This antenna pattern can be radio-frequency antenna pattern, for instance be microstrip-type antenna (patchantenna), it is advantageous to for the antenna pattern of 60GHz frequency band.
In the embodiment of the present invention, integrated millimeter wave chip-packaging structure utilizes the intermediary layer structure with electroplating ventilating hole structure, and make antenna pattern on it electrically connect with chip, therefore, wiring or wire feed-in mode is used to connect antenna pattern without collocation, and layout area is less needed for making to form antenna pattern, reach to save the purpose of layout area.
In sum, the present invention can use the mode of electroplating ventilating hole structure (via) to electrically connect and FD feed to antenna.Compared to utilizing wire or wiring to connect antenna pattern, the embodiment of the present invention uses the mode of electroplating ventilating hole structure (via) to electrically connect and FD feed to antenna, and therefore the area of substrate shared by antenna is less.Fig. 9 is the millimeter wave 60GHz microstrip-type antenna gain effective wavelength figure to via length, and the via length of antenna is between 1/8th guide wavelengths to 1/16th guide wavelength.According to the structure of the embodiment of the present invention, when the length of via is about 1/11st guide wavelength, antenna gain is 6.3dBi, and benefit is preferably.Figure 10 is millimeter wave antenna radiation efficiency frequency response chart.The chip used according to collocation and product design electrical requirements, with guide wavelength for D, the length of via may be designed as 1st/11st of collocation guide wavelength D that is D/11.As shown in Figure 10, when 60GHz, the antenna gain using conduction band line feed-in mode is 6.1dBi, antenna radiation efficiency 80% (shown in dotted line)；And using the antenna gain of via feed-in mode (length of via is about D/11) is 6.3dBi, radiation efficiency 83% (shown in solid), really improve antenna performance.
The present invention by chip buried-in in up concave type or ostiolate substrate, can reduce the integral thickness of encapsulating structure.Additionally, relative to the encapsulating structure adopting wire or wire laying mode to connect antenna, this case chip collocation perforation conducting structure connects antenna pattern, area needed for antenna arrangement can be reduced, do not undermine and even strengthen antenna performance, really integrating radio frequency chip and antenna pattern, in encapsulating structure, reach to reduce millimeter wave power consume, promote package module usefulness the present invention effectively.Due in this case embodiment by antenna pattern is configured at above or below chip allocation position, and electrically connect antenna pattern and chip by electroplating through-hole structure, and the minimizing high-frequency signal loss that shortened by signal transmission path.
Although disclosing the present invention in conjunction with above example; but it is not limited to the present invention; any art has usually intellectual; without departing from the spirit and scope of the present invention; a little change and retouching can be done, therefore protection scope of the present invention should with being as the criterion that the claim enclosed defines.
Claims (15)
1. an integrated millimeter wave chip-packaging structure, including:
Intermediary layer structure, wherein this intermediary layer structure includes the first metal layer, the second metal level, insulation support layer between this first, second metal level, and this intermediary layer structure includes at least one first electroplating ventilating hole structure, run through this first metal layer, this insulation support layer and this second metal level, and electrically connect this first metal layer and this second metal level；
At least one chip, is linked to this intermediary layer structure, and wherein this chip has active face and is positioned at the engagement pad on this active face；And
Substrate, is linked to this intermediary layer structure, and wherein this substrate at least includes an insulating barrier and the 3rd metal level being positioned on insulating barrier, and the 3rd metal level is positioned at this substrate side towards this intermediary layer structure；This first metal layer of this intermediary layer structure at least includes an antenna pattern, and this antenna pattern is positioned at above or below this chip, and this chip electrically connects this antenna pattern by this first electroplating ventilating hole structure of this intermediary layer structure.
2. integrated millimeter wave chip-packaging structure as claimed in claim 1, wherein this substrate has up concave type bug hole, this chip buried-in in this up concave type bug hole this active face of this chip towards this second metal level of this intermediary layer structure, this chip is linked to this intermediary layer structure by the projection physical property between this engagement pad and this second metal level, and this chip electrically connects this antenna pattern by this projection and this first electroplating ventilating hole structure.
3. integrated millimeter wave chip-packaging structure as claimed in claim 1, wherein this substrate has opening, expose this chip, this active face of this chip is towards this second metal level of this intermediary layer structure, this chip is linked to this intermediary layer structure by the projection physical property between this engagement pad and this second metal level, and this chip electrically connects this antenna pattern by this projection and this first electroplating ventilating hole structure.
4. integrated millimeter wave chip-packaging structure as claimed in claim 2, wherein this substrate of this integrated millimeter wave chip-packaging structure also includes the 4th metal level and the second electroplating ventilating hole structure, 4th metal level is positioned at this insulating barrier another side relative to the 3rd metal level, and this second electroplating ventilating hole structure runs through this substrate and connects the 3rd metal level of these insulating barrier both sides and the 4th metal level.
5. integrated millimeter wave chip-packaging structure as claimed in claim 3, wherein this substrate of this integrated millimeter wave chip-packaging structure also includes the 4th metal level and the second electroplating ventilating hole structure, 4th metal level is positioned at this insulating barrier another side relative to the 3rd metal level, and this second electroplating ventilating hole structure runs through this substrate and connects the 3rd metal level of these insulating barrier both sides and the 4th metal level.
6. integrated millimeter wave chip-packaging structure as claimed in claim 4, wherein this integrated millimeter wave chip-packaging structure also includes another substrate and is linked to this substrate, this another substrate includes the soldered ball being placed between this substrate and this another substrate, and this another substrate makes this substrate link with this another substrate physical property and be electrical connected by this soldered ball.
7. integrated millimeter wave chip-packaging structure as claimed in claim 5, wherein this integrated millimeter wave chip-packaging structure also includes another substrate and is linked to this substrate, this another substrate includes the soldered ball being placed between this substrate and this another substrate, and this another substrate makes this substrate link with this another substrate physical property and be electrical connected by this soldered ball.
8. integrated millimeter wave chip-packaging structure as claimed in claim 2, wherein this integrated millimeter wave chip-packaging structure also includes another intermediary layer structure and multiple projections, this another intermediary layer structure includes at least one 3rd electroplating ventilating hole structure and runs through this another intermediary layer structure, this another intermediary layer structure is between this chip and this intermediary layer structure, and this chip is linked to this another intermediary layer structure by those projections, this another intermediary layer structure is linked to this intermediary layer structure again through those projections, by those projections with this first, 3rd electroplating ventilating hole structure makes this chip, this intermediary layer structure links with this another intermediary layer works rationality and is electrical connected.
9. integrated millimeter wave chip-packaging structure as claimed in claim 3, wherein this integrated millimeter wave chip-packaging structure also includes another intermediary layer structure and multiple projections, this another intermediary layer structure includes at least one 3rd electroplating ventilating hole structure and runs through this another intermediary layer structure, this another intermediary layer structure is between this chip and this intermediary layer structure, and this chip is linked to this another intermediary layer structure by those projections, this another intermediary layer structure is linked to this intermediary layer structure again through those projections, by those projections with this first, 3rd electroplating ventilating hole structure makes this chip, this intermediary layer structure links with this another intermediary layer works rationality and is electrical connected.
10. integrated millimeter wave chip-packaging structure as claimed in claim 8, wherein this substrate of this integrated millimeter wave chip-packaging structure also includes the 4th metal level and the second electroplating ventilating hole structure, 4th metal level is positioned at this insulating barrier another side relative to the 3rd metal level, and this electroplating ventilating hole structure runs through this substrate and connects the 3rd metal level of these insulating barrier both sides and the 4th metal level.
11. integrated millimeter wave chip-packaging structure as claimed in claim 9, wherein this substrate of this integrated millimeter wave chip-packaging structure also includes the 4th metal level and the second electroplating ventilating hole structure, 4th metal level is positioned at this insulating barrier another side relative to the 3rd metal level, and this electroplating ventilating hole structure runs through this substrate and connects the 3rd metal level of these insulating barrier both sides and the 4th metal level.
12. integrated millimeter wave chip-packaging structure as claimed in claim 10, wherein this integrated millimeter wave chip-packaging structure also includes another substrate and is linked to this substrate, this another substrate includes the soldered ball being arranged between this substrate and this another substrate, and this another substrate makes this substrate link with this another substrate physical property and be electrical connected by this soldered ball.
13. integrated millimeter wave chip-packaging structure as claimed in claim 11, wherein this integrated millimeter wave chip-packaging structure also includes another substrate and is linked to this substrate, this another substrate includes the soldered ball being arranged between this substrate and this another substrate, and this another substrate makes this substrate link with this another substrate physical property and be electrical connected by this soldered ball.
14. integrated millimeter wave chip-packaging structure as claimed in claim 1, wherein this intermediary layer structure also includes a wiring layer, and among this insulation support layer and between this antenna pattern and this second metal level, this wiring layer is ground plane.
15. integrated millimeter wave chip-packaging structure as claimed in claim 1, wherein this chip is radio frequency chip.
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| CN201410778230.0A CN105762138B (en) | 2014-12-15 | 2014-12-15 | Integrated millimeter wave chip-packaging structure |
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| CN201410778230.0A CN105762138B (en) | 2014-12-15 | 2014-12-15 | Integrated millimeter wave chip-packaging structure |
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| CN109888454B (en) * | 2018-12-29 | 2021-06-11 | 瑞声精密制造科技(常州)有限公司 | Packaged antenna module and electronic equipment |
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