CN105703736B - A kind of bulk acoustic wave device and integrated morphology - Google Patents
A kind of bulk acoustic wave device and integrated morphology Download PDFInfo
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- 229910052732 germanium Inorganic materials 0.000 claims description 5
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- 239000004020 conductor Substances 0.000 claims 1
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- 239000010453 quartz Substances 0.000 description 1
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- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
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- 239000010937 tungsten Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
This application discloses a kind of bulk acoustic wave devices, using the substrate comprising insulating layer, have cavity in the semiconductor material of insulating layer side, successively have hearth electrode, piezoelectric membrane and top electrode on the cavity of this layer of semiconductor material.The bulk acoustic wave device of the application is again based on the substrate comprising insulating layer, but structure is the simplest, and does not have to the existing bulk acoustic wave device manufacturing process based on body silicon substrate of change and can be realized.
Description
Technical field
This application involves a kind of bulk acoustic wave (BAW, bulk acoustic wave) devices.
Background technique
Thin film bulk acoustic wave resonator (FBAR or TFBAR, Thin-film bulk acoustic resonator) is a kind of
Typical bulk acoustic wave device and a kind of MEMS (micro-electro-mechanical systems, MEMS) device
Part, the main piezoelectric material for including upper layer and lower layer metal electrode and being clipped among two electrodes, three constitute sandwich structure.
FBAR is usually used in making the radio-frequency filter in the mobile terminals such as mobile phone, and the filter is made of one group of FBAR, for example, by using
Half trapezoidal (half-ladder), complete trapezoidal (full-ladder), lattice (lattice), topological structures such as (stack) are stacked,
For filtering out unwanted frequency while specific frequency being allowed to pass through.FBAR is also used to make duplexer, partially to replace the table of early stage
Face sound wave (SAW, surface acoustic wave) device, it is advantageous that size is small, technique is advanced, improved efficiency.This
Outside, FBAR is also used to make microwave oscillator, sensor, power amplifier, low-noise amplifier etc..
Radio-frequency filter based on FBAR generallys use the body silicon (bulk silicon) of high impedance as substrate, in body silicon
After manufacture is completed radio-frequency filter and is packaged on wafer (wafer), or pass through SMT (surface-mount
Technology, surface mounting technique) mode weld on a printed circuit, or with other radio-frequency devices (such as power
Amplifier, RF switch) carry out secondary encapsulation welded again on a printed circuit after radio-frequency module with being formed.
Referring to Fig. 1, this is a kind of existing FBAR based on body silicon substrate.The top of body silicon substrate 100 from lower and
On be respectively provided with hearth electrode 201, piezoelectric membrane 202 and top electrode 203.The body silicon substrate 100 can also be changed to sapphire, arsenic
The substrate materials such as gallium, gallium nitride, silicon carbide, quartz, glass.The hearth electrode 201, top electrode 203 are, for example, aluminium, gold, aluminum bronze
The metal materials such as alloy, alusil alloy, Al-Si-Cu alloy, tungsten, titanium, titanium tungsten compound, molybdenum, platinum.The piezoelectric membrane 202 is for example
For piezoelectric materials such as zinc oxide, PZT (Lead zirconate titanate, lead zirconate titanate), aluminium nitride.100 He of body silicon substrate
There is the cavity 104 from the upper surface of body silicon substrate 100 to lower recess between hearth electrode 201.
Referring to Fig. 2, the manufacturing method of FBAR shown in FIG. 1 includes the following steps:
Step S101 goes out a pit in the surface etch of body silicon substrate 100, for example, by using lithography and etching technique.It is recessed
The shape in hole is exactly the summation of the sacrificial layer release channel at cavity 104 and its edge.
Step S102 deposits one layer of sacrificial layer on body silicon substrate 100, at least fills the pit full.The sacrifice
Layer is, for example, silica, aluminium, magnesium, germanium etc..
Sacrificial layer is ground to and body silicon substrate 100 by step S103 using flatening process such as chemical mechanical grindings (CMP)
Upper surface flush.
Step S104 first grows one layer of metal on body silicon substrate 100 and sacrificial layer, then by this layer of metal etch at
Hearth electrode 201, for example, by using sputtering, lithography and etching technique.Hearth electrode 201 substantially covers the position of the pit, but exposure
The position of sacrificial layer release channel out.
Step S105 first deposits a layer of piezo-electric material on body silicon substrate 100, sacrificial layer and hearth electrode 201, then will
The layer of piezo-electric material is etched into piezoelectric membrane 202.Piezoelectric membrane 202 completely covers pit, but exposes the extraction of hearth electrode 201
End.
Step S106 first grows one layer of gold on body silicon substrate 100, sacrificial layer, hearth electrode 201 and piezoelectric membrane 202
Belong to, then by this layer of metal etch at top electrode 203, for example, by using deposit, lithography and etching technique.
Step S107, etching piezoelectric membrane 202 is to expose the position of sacrificial layer release channel, then by the sacrifice
The whole sacrificial layer of layer release channel removal, for example, by using photoetching, etching, wet corrosion technique.Originally it is sacrificed what layer occupied
Part just becomes cavity 104, between body silicon substrate 100 and hearth electrode 201.
Also there is FBAR using SOI (silicon on insulator, silicon-on-insulator, also referred to as silicon on insulating layer) as lining
Bottom.SOI is that a layer insulating is added in body silicon, and insulating layer is all silicon up and down.The thickness of top layer silicon above insulating layer
Usually micron level, the device based on SOI substrate production is usually all in top layer silicon.(claim with the device based on body silicon substrate
For body silicon device) it compares, the device (referred to as SOI device) based on SOI substrate has the property that.The mobility of SOI device
Height, mutual conductance is big, parasitic capacitance is small, this makes SOI device have high speed characteristics.The leakage current of SOI device is small, quiescent dissipation
With dynamic power consumption all very little, junction area be minimum, junction capacity and the equal very little of wire capacitances, therefore have extraordinary anti-soft failure,
Transient irradiation and single-particle inversion ability.SOI device uses Fully dielectric isolation, thoroughly eliminates the latch-up in body silicon circuit,
It is not necessary to prepare the complicated isolation structure such as trap (well) of Bulk CMOS circuit.The minimum interval of SOI device is only dependent upon light
Carve the limitation with lithographic technique.For SOI device other than SOI substrate material cost is higher than body silicon device, other costs are below body
Silicon device.The manufacturing process of SOI device 3 mask plates at least fewer than body silicon device, the process for reducing 13~20%.
Publication No. CN101499784A, publication date are that the Chinese invention patent application on the 5th of August in 2009 discloses one kind
FBAR based on SOI substrate.The FBAR includes the sandwich structure being made of hearth electrode, piezoelectric membrane, top electrode, the Sanming City
Structure is controlled to be located on the top layer silicon of SOI substrate.Insulating layer in the SOI substrate below the sandwich structure be removed and
Form cavity.
The Chinese invention patent application that application publication number is CN102122940A, data of publication of application is on July 13rd, 2011
Disclose a kind of FBAR based on SOI substrate.The FBAR includes forming sandwich knot by hearth electrode, piezoelectric membrane, top electrode
The energy converter of structure, the energy converter are located on the SOI substrate of a default cavity type.In one embodiment, the SOI substrate
Cavity run through top layer silicon and insulating layer, cavity bottom is in bottom silicon.In another embodiment, the sky of the SOI substrate
Chamber runs through top layer silicon and insulating layer, and cavity bottom is in the upper surface of bottom silicon.
Open number is TW201411810A, the Taiwan description of the invention that publication date is on March 16th, 2014 discloses this public affairs
A kind of FBAR based on SOI substrate is opened.The FBAR includes the electrode by aln layer (as piezoelectric material) and its two sides
The sandwich structure of composition, the sandwich structure have borrowed the insulating layer (i.e. aln layer) in SOI substrate as piezoelectric material.
The upper surface of bottom silicon in the SOI substrate below the sandwich structure is partially removed and forms cavity.
The above-mentioned FBAR based on SOI substrate, not only structure is complicated, but also manufacturing process is cumbersome, and manufacturing cost is higher.
Summary of the invention
The technical problem to be solved by the application is to provide a kind of bulk acoustic wave devices, and structure is simple, and compatibility is existing
Bulk acoustic wave device manufacturing process based on body silicon substrate.The application also provides a kind of integrated morphology comprising bulk acoustic wave device,
Area is saved, reduces cost, and radio-frequency performance can be promoted.
In order to solve the above technical problems, the bulk acoustic wave device of the application uses the substrate comprising insulating layer, in insulating layer one
In the semiconductor material of side have cavity, on the cavity of this layer of semiconductor material successively have hearth electrode, piezoelectric membrane and
Top electrode.The bulk acoustic wave device includes FBAR device etc..The substrate comprising insulating layer includes SOI substrate, SSOI
(strained silicon on insulator, strained-silicon-on-insulator) substrate, GOI (germanium on
Insulator, germanium on insulator) substrate etc..
The existing FBAR based on SOI substrate perhaps through the top layer silicon and insulating layer of SOI substrate or incites somebody to action cavity
The insulating layer part of SOI substrate removes and forms cavity, or forms cavity close to the one side of insulating layer in bottom silicon, not only ties
Structure is complicated, and can not be compatible with the manufacturing process of the existing FBAR based on body silicon substrate completely.The bulk acoustic wave device of the application
It is again based on the substrate comprising insulating materials, but structure is the simplest, and not having to the existing manufacturing process of change can be real
It is existing.
The integrated morphology comprising bulk acoustic wave device of the application includes bulk acoustic wave device and other one or more RF devices
Part has cavity using the substrate comprising insulating layer in the semiconductor material of insulating layer side, in this layer of semiconductor material
Successively have hearth electrode, piezoelectric membrane and top electrode as bulk acoustic wave device on cavity.The bulk acoustic wave device includes FBAR
Device etc..Other radio-frequency devices are perhaps produced on bulk acoustic wave device on same layer semiconductor material or and bulk acoustic wave device
It is produced on the other side semiconductor material of the substrate comprising insulating layer.Other described radio-frequency devices include that radio-frequency power is put
Big device, RF switch etc..
Rarely have at present and bulk acoustic wave device and other radio-frequency devices are integrated in together on the substrate comprising insulating layer, the application
Integrated morphology realize this point, to realize the Single-Chip Integration of radio frequency front-end devices.This not only solves RF device
Part accounts for the problem that plate suqare is big, at high cost, and integrates and will greatly reduce the length of transmission line of radio-frequency devices, reduces
The loss of transmission line, this will also promote the performance of radio-frequency devices and complete machine significantly.
Detailed description of the invention
Fig. 1 is the schematic diagram of the section structure of existing FBAR based on body silicon substrate a kind of.
Fig. 2 is the manufacturing process flow diagram of FBAR shown in Fig. 1.
Fig. 3~Fig. 4 is the schematic diagram of the section structure of two embodiments of the bulk acoustic wave device of the application.
Fig. 5~Fig. 8 is the cross-section structure signal of four embodiments of the integrated morphology comprising bulk acoustic wave device of the application
Figure.
Description of symbols in figure: 101 be bottom silicon；102 be insulating layer；103 be top layer silicon；104 be cavity；201 are
Hearth electrode；202 be piezoelectric membrane；203 be top electrode；301 be power amplifier；302 be RF switch.
Specific embodiment
Referring to Fig. 3, this is the embodiment one of the bulk acoustic wave device of the application, bulk acoustic wave device includes by taking FBAR as an example
The substrate of insulating layer is by taking SOI substrate as an example.Bottom silicon 101, top layer silicon 103 and the insulating layer 102 among the two constitute
SOI substrate.Top layer silicon 103 is such as defined as to the front of SOI substrate, then it is SOI substrate is face-up, in the upper of top layer silicon 103
Side is respectively provided with hearth electrode 201, piezoelectric membrane 202 and top electrode 203 from bottom to top.Have one in the upper surface of top layer silicon 103
A pit, the lower section which is at least partially disposed at hearth electrode 201 constitute cavity 104.Cavity 104, hearth electrode 201, piezoelectricity are thin
Film 202 and top electrode 203 just constitute the FBAR based on SOI substrate.
Referring to Fig. 4, this is the embodiment two of the bulk acoustic wave device of the application, bulk acoustic wave device is still by taking FBAR as an example, packet
Substrate containing insulating layer is still by taking SOI substrate as an example.Bottom silicon 101, top layer silicon 103 and 102 structure of insulating layer among the two
At SOI substrate.Bottom silicon 101 is such as defined as to the back side of SOI substrate, then upward by the SOI substrate back side, in bottom silicon 101
Top be respectively provided with hearth electrode 201, piezoelectric membrane 202 and top electrode 203 from bottom to top.Have in the upper surface of bottom silicon 101
There is a pit, the lower section which is at least partially disposed at hearth electrode 201 constitutes cavity 104.Cavity 104, hearth electrode 201, pressure
Conductive film 202 and top electrode 203 just constitute the FBAR based on SOI substrate.
Obviously, the difference of above-mentioned two embodiment is only that FBAR or is manufactured in front (the i.e. top layer silicon of SOI substrate
On 103), or it is manufactured in the back side (i.e. on bottom silicon 101) of SOI substrate, both structures have no device performance
It influences.
Compared with the existing FBAR based on SOI substrate, the application is again based on the FBAR of SOI substrate, but has most
For simple structure --- and only form pit in the top layer silicon of SOI substrate or bottom silicon upper surface, hearth electrode is covered on recessed
Hole top forms the cavity structure of FBAR, this can be achieved under conditions of not changing existing manufacturing process.
In the above two embodiments, SOI substrate is replaced by SSOI substrate, GOI substrate etc. other includes insulating layer
Substrate.
Compared with the existing FBAR based on SOI substrate, the application simplifies device architecture.The application is only in SOI substrate
The semiconductor material of side forms pit not in contact with the one side of insulating layer, forms cavity between the pit and hearth electrode.This can be with
Using the manufacturing process of the existing FBAR based on body silicon substrate, thus improvement cost is extremely low.
Currently, radio-frequency filter, power amplifier, RF switch are all that manufacture and encapsulation are completed on individual wafer,
It refills and is fitted on printed circuit board.The summation of multiple devices occupies great cloth plate suqare, it is also desirable to longer transmission line connection,
Thereby reduce the radio-frequency performance of device.Such as more transmission loss are brought, to reduce the output of power amplifier
Power.The separately fabricated manufacturing process of each device is mutually indepedent, and manufacturing cost is very expensive.
Referring to Fig. 5, this is the embodiment one of integrated morphology of the application comprising bulk acoustic wave device.Bottom silicon 101, top layer
Silicon 103 and the insulating layer 102 among the two constitute SOI substrate.Top layer silicon 103 is such as defined as to the front of SOI substrate,
It is then that SOI substrate is face-up, it is respectively provided with hearth electrode 201,202 and of piezoelectric membrane from bottom to top in the top of top layer silicon 103
Top electrode 203.There is a pit in the upper surface of top layer silicon 103, which is at least partially disposed at the lower section structure of hearth electrode 201
At cavity 104.Cavity 104, hearth electrode 201, piezoelectric membrane 202 and top electrode 203 just constitute the FBAR based on SOI substrate.
Also making in the upper front of SOI substrate has one or more radio-frequency devices, such as power amplifier 301, RF switch 302
Deng.These radio-frequency devices and FBAR constitute integrated morphology, they make together, thus identical processing step can be given
Merge.
Referring to Fig. 6, this is the embodiment two of integrated morphology of the application comprising bulk acoustic wave device.Itself and embodiment one
Difference is only that: integrated morphology includes FBAR and other radio-frequency devices, and all devices are all changed to be manufactured in the back side of SOI substrate
(i.e. on bottom silicon 101).
Referring to Fig. 7, this is the embodiment three of integrated morphology of the application comprising bulk acoustic wave device.Itself and embodiment one
Difference is only that: the integrated morphology of FBAR includes FBAR and other radio-frequency devices, and FBAR is still manufactured in the front of SOI substrate (i.e.
On top layer silicon 103), other radio-frequency devices are changed to be manufactured in the back side of SOI substrate (i.e. on bottom silicon 101).
Referring to Fig. 8, this is the example IV of integrated morphology of the application comprising bulk acoustic wave device.Itself and embodiment one
Difference is only that: the integrated morphology of FBAR includes FBAR and other radio-frequency devices, other radio-frequency devices are still manufactured in SOI substrate
Positive (i.e. on top layer silicon 103), FBAR are changed to be manufactured in the back side (i.e. on bottom silicon 101) of SOI substrate, this is to device
Influence can be had no.
The radio-frequency devices such as power amplifier, RF switch are made on SOI substrate at present, but are rarely had and FBAR
Integrated morphology together.Present applicant proposes the integrated morphologies based on SOI substrate, FBAR and other radio-frequency devices can be integrated
It is manufactured in same wafer, so that the single-chip (SoC, System on Chip) for realizing radio frequency front-end devices is integrated.This is not only
Dramatically save cloth plate suqare of the radio-frequency devices in the products such as mobile terminal, reduce also significantly the manufacture of chip at
This.Since transmission line is greatly reduced, transmission loss can be also reduced, to promote the radio-frequency performance of device.
In aforementioned four embodiment, SOI substrate is replaced by SSOI substrate, GOI substrate etc., and other include insulating layer
Substrate.
The above is only preferred embodiment of the present application, it is not used to limit the application.Come for those skilled in the art
It says, various changes and changes are possible in this application.Within the spirit and principles of this application, made any modification, equivalent
Replacement, improvement etc., should be included within the scope of protection of this application.
Claims (9)
1. a kind of bulk acoustic wave device, characterized in that substrate of the use comprising insulating layer, two of the substrate comprising insulating layer
Side is semiconductor material, and centre has insulating layer；There is cavity in the semiconductor material of insulating layer side, in the layer half
Successively there is hearth electrode, piezoelectric membrane and top electrode on the cavity of conductor material.
2. bulk acoustic wave device according to claim 1, characterized in that the substrate face comprising insulating layer or back side court
On, square semiconductor material upper surface has cavity on the insulating layer.
3. bulk acoustic wave device according to claim 1, characterized in that the bulk acoustic wave device includes film bulk acoustic resonator
Device.
4. bulk acoustic wave device according to claim 1, characterized in that the substrate comprising insulating layer includes on insulator
Silicon, strained-silicon-on-insulator, germanium on insulator.
5. a kind of integrated morphology comprising bulk acoustic wave device, characterized in that penetrated including bulk acoustic wave device and one or more other
Frequency device, using the substrate comprising insulating layer, two sides of the substrate comprising insulating layer are semiconductor material, intermediate
With insulating layer；There is cavity in the semiconductor material of insulating layer side, on the cavity of this layer of semiconductor material successively
With hearth electrode, piezoelectric membrane and top electrode as bulk acoustic wave device；
Other radio-frequency devices are perhaps produced on same layer semiconductor material with bulk acoustic wave device or distinguish with bulk acoustic wave device
It is produced on the two sides semiconductor material of the substrate comprising insulating layer.
6. the integrated morphology according to claim 5 comprising bulk acoustic wave device, characterized in that the lining comprising insulating layer
Upward, square semiconductor material upper surface has cavity on the insulating layer for bottom front or the back side.
7. the integrated morphology according to claim 5 comprising bulk acoustic wave device, characterized in that the bulk acoustic wave device includes
Thin film bulk acoustic wave resonator.
8. the integrated morphology according to claim 5 comprising bulk acoustic wave device, characterized in that the lining comprising insulating layer
Bottom includes silicon-on-insulator, strained-silicon-on-insulator, germanium on insulator.
9. the integrated morphology according to claim 5 comprising bulk acoustic wave device, characterized in that other described radio-frequency devices packets
Include radio-frequency power amplifier, RF switch.
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| CN111371429B (en) * | 2018-12-26 | 2022-07-12 | 中芯集成电路（宁波）有限公司上海分公司 | Method and structure for integrating control circuit and acoustic wave filter |
| CN109802645A (en) * | 2018-12-26 | 2019-05-24 | 天津大学 | A kind of heterogeneous integrated approach of air-gap type piezoelectric sound wave device and the device |
| CN110113022B (en) * | 2019-05-13 | 2023-09-26 | 南方科技大学 | Film bulk acoustic resonator and manufacturing method thereof |
| CN110380702B (en) * | 2019-07-25 | 2020-04-10 | 深圳市汇芯通信技术有限公司 | Integrated device manufacturing method and related product |
| CN110931433B (en) * | 2019-10-22 | 2022-06-28 | 深圳市汇芯通信技术有限公司 | Integrated device manufacturing method and related product |
| CN111628747B (en) * | 2020-04-26 | 2023-01-17 | 深圳市信维通信股份有限公司 | Filtering device, radio frequency front-end device and wireless communication device |
| US11606080B2 (en) | 2020-04-26 | 2023-03-14 | Shenzhen Sunway Communication Co., Ltd. | Filter device, RF front-end device and wireless communication device |
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| CN1450719A (en) * | 2002-04-11 | 2003-10-22 | 三星电机株式会社 | Film bulk acoustic resonator and method of forming the same |
| CN102830161A (en) * | 2003-12-30 | 2012-12-19 | 英特尔公司 | Biosensor utilizing a resonator having a functionalized surface |
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| KR100506729B1 (en) * | 2002-05-21 | 2005-08-08 | 삼성전기주식회사 | Film bulk acoustic resonator and method for fabrication thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1450719A (en) * | 2002-04-11 | 2003-10-22 | 三星电机株式会社 | Film bulk acoustic resonator and method of forming the same |
| CN102830161A (en) * | 2003-12-30 | 2012-12-19 | 英特尔公司 | Biosensor utilizing a resonator having a functionalized surface |
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