CN105633191A - Two-dimensional transition metal chalcogenide homojunction photoelectric detector with perpendicular growth structure and preparation method therefor - Google Patents
Two-dimensional transition metal chalcogenide homojunction photoelectric detector with perpendicular growth structure and preparation method therefor Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 229910052723 transition metal Inorganic materials 0.000 title claims abstract description 11
- -1 transition metal chalcogenide Chemical class 0.000 title claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 65
- 239000004065 semiconductor Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000007747 plating Methods 0.000 claims description 14
- 238000004549 pulsed laser deposition Methods 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910021389 graphene Inorganic materials 0.000 claims description 8
- 229910052961 molybdenite Inorganic materials 0.000 claims description 7
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 5
- 241000931526 Acer campestre Species 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 2
- 229910000510 noble metal Inorganic materials 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 230000001012 protector Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 description 14
- 238000009413 insulation Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 229910016001 MoSe Inorganic materials 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000002086 nanomaterial Substances 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 238000010025 steaming Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000002127 nanobelt Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract
The invention discloses a two-dimensional transition metal chalcogenide homojunction photoelectric detector with a perpendicular growth structure and a preparation method therefor. The protector is provided with a bottom electrode and a mask layer on the upper surface of an insulating substrate in sequence, wherein a through hole communicated with the bottom electrode is formed in the center of the mask layer; an N type semiconductor material perpendicular to the upper surface of the bottom electrode is growing in the through hole; a P type semiconductor material is growing on the N type semiconductor material; the N type semiconductor material and the P type semiconductor material are growing along a direction perpendicular to the bottom surface to form a PN homojunction; a top electrode is arranged above the mask layer; and the bottom electrode is in ohmic contact with the N type semiconductor material, the top electrode and the P type semiconductor material separately. The protector provided by the invention has the advantages of high response speed, high sensitivity, simple preparation, high repeatability, and the like.
Description
One, technical field
The present invention relates to a kind of two-dimentional transition metal chalcogenide homojunction photodetector and its preparation method with vertical-growth structure, belong to semiconductor photoelectric device technical field.
Two, background technology
Photodetector is one of important devices in opto-electronic device, extensively for various fields such as optical communication, industrial detection and quantum communications. In recent years, along with developing rapidly of science and technology, it is that the detector of representative receives much concern because having the excellent specific properties such as responsive height taking nano photodetectors. Currently, the report retrieved mainly concentrates on monodimension nanometer material and two-dimension nano materials. Such as, n type doped zinc sulphide (ZnS) nano belt/line gain of light is up to 107, but its longer carrier lifetime limits the response speed [YongqiangYu, JianshengJie, PengJiang, et.al.J.Mater.Chem.2011,21,12632.] of device. Wherein two dimension MoS2Optical responsivity is up to 880AW-1, response speed is tens millisecond of-tens microsecond) and [O.Lopez-Sanchez, D.Lembke, et.al.Nat.Nanotechnol.2013,8,497; YanZhang, YongqiangYu, et.al.Small2016,12,1062.]. The many devices more than reported still are difficult to meet real world applications requirement due to characteristics such as device size are minimum, response speed is low, how to prepare more excellent photodetector and serve very important status for the development of electron trade.
On the whole, the development of nano photoelectric device is limited to the controlledly synthesis of material and the preparation technology of device. With regard to two-dimension nano materials, current preparation method has based on the top-to-bottom method of mechanically peel and chemical stripping with taking CVD, PVD as the bottom-to-top method of representative. Nanometer sheet is by destroying the surface tissue of material unavoidably and introduce extra interface pollution in the process of mechanically peel and chemical stripping transfer. Although the nano material crystal mass prepared by this kind of method is higher, but it is difficult to separate the nanometer sheet of big area size. It is the general a kind of technology of current Application comparison that CVD synthesizes two-dimensional material, it is possible to be used for synthesis big area, large-sized nanometer sheet, but this kind of method is but subject to the restriction of substrate. Therefore, how to prepare high-performance, low value, large-sized two-dimensional material are the key realizing preparation high-performance photodetector.
Three, summary of the invention
The shortcoming existed for above-mentioned prior art and deficiency, there is two-dimentional transition metal chalcogenide homojunction photodetector and its preparation method of vertical structure it is desirable to provide a kind of, technical problem to be solved is the method construct homojunction by pulsed laser deposition, realizes response speed height simultaneously, prepares simply, is easy to characteristics such as repeating.
Technical solution problem of the present invention, adopts following technical scheme:
The present invention has the two-dimentional transition metal chalcogenide homojunction photodetector of vertical-growth structure, its feature is: described homojunction photoelectric detector is that the upper surface of insulating substrate is provided with bottom electrode, and the upper surface at described bottom electrode is provided with mask layer; Described mask layer is insulating material, is provided with a through hole being connected with described bottom electrode at the center of described mask layer; Be perpendicular to described bottom electrode upper surface, growth has the N-type semiconductor material in array structure to be positioned at described through hole, on described N-type semiconductor material, growth has the P-type semiconductor material in array structure, and described N-type semiconductor material and described P-type semiconductor material form PN homojunction; Being provided with upper current conducting cap above described mask layer, described upper current conducting cap does not exceed the border of mask layer and covers through hole completely; Described bottom electrode and described N-type semiconductor material, described upper current conducting cap and described P-type semiconductor material all form ohmic contact. Described semiconductor material is MoSe2Or MoS2, the semiconductor material of two kinds of different conduction-types can grow along the direction being perpendicular to bottom electrode in process of growth and form PN homojunction;
The present invention has the two-dimentional transition metal chalcogenide homojunction near infrared photodetector of vertical-growth structure, and its feature is also: described bottom electrode is Au electrode, Ti/Au electrode or Ag electrode; The thickness of described bottom electrode is 20nm-300nm. Described Ti/Au electrode deposits the Au that thickness is 30-60nm on the Ti that thickness is 10-50nm.
Described upper current conducting cap is Graphene electrodes or noble metal electrode.
The preparation method of the above-mentioned two-dimentional transition metal chalcogenide homojunction photodetector with vertical-growth structure, comprises the steps:
A, insulating substrate upper surface steam plating bottom electrode;
B, steam plating mask layer at the upper surface of described bottom electrode, and at the center of mask layer a reserved through hole being connected with described bottom electrode;
C, employing pulsed laser deposition or magnetron sputtering steam plating two dimension N-type semiconductor material in through hole, and N-type semiconductor material is that array structure is perpendicular to bottom electrode growth, and bottom electrode and N-type semiconductor material form ohmic contact; And then adopting pulsed laser deposition or magnetron sputtering extension P-type semiconductor material on described N-type semiconductor material, N-type semiconductor material and P-type semiconductor material form PN homojunction;
D, being arranged on mask layer by upper current conducting cap, make upper current conducting cap not exceed the border of mask layer and cover through hole completely, upper current conducting cap and P-type semiconductor material form ohmic contact, namely complete the preparation of homojunction near infrared photodetector.
The processing condition being prepared N-type semiconductor material or P-type semiconductor material by pulsed laser deposition are: laser power to be 40��500mJ, optical maser wavelength be 248nm, pulse-repetition are 1��20Hz, air pressure is 0.1��10-5Pa��
Comparing with prior art, the useful effect of the present invention is embodied in:
A kind of two-dimentional transition metal chalcogenide homojunction photodetector with vertical-growth structure of inventive design, the different semiconductor material of the same race of two kinds of conduction types can effectively form PN homojunction in process of growth, and electrode materials and semi-conductor form good ohmic contact simultaneously; Owing to the distinctive vertical structure of its material and good device architecture make the detector of the present invention have the strong advantage of response speed height, sensitivity; Also have simultaneously preparation simple, the advantages such as strong can be repeated.
Four, accompanying drawing explanation
Fig. 1 is the floor map of homojunction photoelectric detector of the present invention;
Fig. 2 is the XPS picture of homojunction Mo and Se in photodetector prepared by embodiment 1;
Fig. 3 be photoelectric detector prepared by embodiment 1 have light and unglazed under I-V curve;
Fig. 4 is curve time response of photoelectric detector prepared by embodiment 1;
Fig. 5 is the photoresponse curve of photodetector prepared by embodiment 1 under 1MHz;
Fig. 6 is the frequency response characteristic curve of photodetector prepared by embodiment 1;
Fig. 7 be photoelectric detector prepared by embodiment 2 have light and unglazed under I-V curve;
Fig. 8 is the photoresponse curve of photodetector prepared by embodiment 2 under 2MHz;
Fig. 9 is the frequency response characteristic curve of photodetector prepared by embodiment 2;
Number in the figure: 1 is insulating substrate; 2 is bottom electrode; 3 is mask layer; 4 is N-type semiconductor material; 5 is P-type semiconductor material; 6 is upper current conducting cap.
Five, embodiment
Embodiment 1
As shown in Figure 1, it is that the upper surface of insulating substrate 1 is provided with bottom electrode 2 that the present embodiment has the homojunction photodetector of vertical-growth structure, and the upper surface at bottom electrode 2 is provided with mask layer 3; A through hole being connected with bottom electrode 2 it is provided with at the center of mask layer 3; Be perpendicular to bottom electrode 2 upper surface, growth has the N-type semiconductor material 4 in array structure to be positioned at through hole, and on N-type semiconductor material 4, growth has the P-type semiconductor material 5 in array structure, and N-type semiconductor material 4 and P-type semiconductor material 5 form PN homojunction; Being provided with upper current conducting cap 6 above mask layer 3, upper current conducting cap 6 does not exceed the border of mask layer 3 and covers through hole completely; Bottom electrode 2 all forms ohmic contact with N-type semiconductor material 4, upper current conducting cap 6 with P-type semiconductor material 5.
Concrete, insulating substrate 1 selects surface to grow the silicon chip having thickness to be 300nm silicon oxide; Bottom electrode 2 is the Au electrode that about 50nm is thick; Mask layer 3 is about the Al of 200nm for thickness2O3Insulation layer; Semiconductor material is MoSe2��
The homojunction photodetector of the present embodiment is prepared as follows:
After a, the silicon chip that surface length has thickness be 300nm silicon oxide are clean by ultrasonic cleaning, plate the thick Au electrode of one layer of about 50nm by the mode of electron beam in its surface steaming.
B, by pulsed laser deposition steam on Au electrode plating one layer of Al2O3Insulation layer is as mask layer, and makes Al2O3Through hole that a diameter is 6cm is left as MoSe in the central position of insulation layer2Sedimentary province; The area of mask layer is about the 4/5 of Au electrode, and thickness is about about 200nm.
C, on the silicon chip steaming plating Au electrode and insulation layer, round-meshed mask is stayed in attached one layer of centre, and circular hole position is corresponding to the position of mask layer through hole; In through hole, the N-type MoSe that plating a layer thickness is about 100nm is steamed by impulse laser deposition system2Film, N-type MoSe2Film is that array structure is perpendicular to Au electrode growth; Subsequently at N-type MoSe2Film steams P type MoSe that the thickness that plating one layer is array structure equally is about 100nm again2Film; The processing condition of pulsed laser deposition are: laser power 120mJ, optical maser wavelength are 248nm, pulse-repetition 3Hz, and air pressure is 10-5Pa, heats up 400 DEG C, and the time is 25min.
D, by long have the Copper Foil of Graphene revolve be coated with polymethylmethacrylate (PMMA) after put in etching liquid (copper sulfate: hydrochloric acid: water=1:5:5) about etching half hour, remove Copper Foil substrate, taking-up Graphene is also fully clean with deionized water, by wet method transfer, Graphene is transferred on mask layer, namely obtain homojunction near infrared photodetector.
Fig. 2 is the XPS figure of the present embodiment gained homojunction, by compared with the XPS peak position of standard element, it is possible to showing that the valency state of Mo is for+4 valencys, the valency state of Se is+2 valencys. This material is MoSe just2, show that plated film is successful.
Utilizing KEITHLEY4200-SCS to test the current voltage characteristic of the present embodiment obtained device, result is as shown in Figure 3. Can finding out that when there is no light irradiation, device shows relatively good rectification characteristic, the dark current of device when reverse biased 0.5V is 0.02mA. Under the illumination condition of wavelength 808nm, light intensity 0.73mW, due to photoproduction minority carrier, reverse photoelectric current rapidly increases to 0.35mA.
In order to observe the reliability of device further, KEITHLEY42000-SCS is utilized to measure the device photoelectric stream situation over time shown in Fig. 4. It may be seen that without, under bias condition, photoelectric current is 0.045mA, dark current is 2 �� 10-4MA, on-off ratio is up to 225.
Response device speed weighs an important indicator of photodetector, it is assembled into quick photoresponse test macro with light source, oscilloscope and signal generator, the present embodiment obtained device is tested, obtain curve as shown in Figure 5, depict the response curve (as shown in Figure 6) of photoelectric current under high frequency characteristics simultaneously. By analytic curve it may be seen that the response speed of device can reach nanosecond rank, its rise time and fall time are respectively 110ns and 321ns, and the three dB bandwidth of device is 600kHz; This kind of device performance has exceeded most photodetector at present. Excellent device performance key factor be this kind of material in process of growth can vertical-growth, current carrier decreases scattering in transmitting procedure so that the mobility of current carrier improves greatly, and then has very fast response speed and good high frequency characteristics.
Embodiment 2:
The homojunction photodetector of the present embodiment has the structure identical with embodiment 1, and difference is only that semiconductor material is MoS2. Its preparation method is as follows:
After a, the silicon chip that surface length has thickness be 300nm silicon oxide are clean by ultrasonic cleaning, plate the thick Au electrode of one layer of about 50nm by the mode of electron beam in its surface steaming.
B, by pulsed laser deposition steam on Au electrode plating one layer of Al2O3Insulation layer is as mask layer, and makes Al2O3The central position of insulation layer leave a diameter be 6cm by as MoS2Sedimentary province; The area of mask layer is about the 4/5 of Au electrode, and thickness is about about 200nm.
C, on the silicon chip steaming plating Au electrode and insulation layer, round-meshed mask is stayed in attached one layer of centre, and circular hole position is corresponding to the position of mask layer through hole; In through hole, the N-type MoS that plating a layer thickness is about 100nm is steamed by impulse laser deposition system2Film, N-type MoS2Film is that array structure is perpendicular to Au electrode growth; Subsequently at N-type MoS2Film steams P type MoS that the thickness that plating one layer is array structure equally is about 100nm again2Film; The processing condition of pulsed laser deposition are: laser power 120mJ, and optical maser wavelength is 248nm, pulse-repetition 3Hz, and air pressure is 10-5Pa, heats up 400 DEG C, and the time is 25min.
D, by long have the Copper Foil of Graphene revolve be coated with polymethylmethacrylate (PMMA) after put in etching liquid (copper sulfate: hydrochloric acid: water=1:5:5) about etching half hour, remove Copper Foil substrate, taking-up Graphene is also fully clean with deionized water, by wet method transfer, Graphene is transferred on mask layer, namely obtain homojunction near infrared photodetector.
Utilizing KEITHLEY4200-SCS to test the current voltage characteristic of the present embodiment obtained device, result is as shown in Figure 7. Can finding out that when there is no light irradiation, device shows relatively good rectification characteristic, the dark current of device when reverse biased 1V is 0.075mA. Under the illumination condition of wavelength 630nm, due to photoproduction minority carrier, reverse photoelectric current rapidly increases to 0.14mA.
With quick photoresponse test macro, the present embodiment obtained device is tested, obtain curve as shown in Figure 8, depict the response curve (as shown in Figure 9) of photoelectric current under high frequency characteristics simultaneously. By analytic curve it may be seen that the response speed of device can reach nanosecond rank, when 2MHz, its rise time and fall time are respectively 45ns and 79ns, and the three dB bandwidth of device is up to 900kHz; This kind of device performance has exceeded the photodetector of most two-dimension nano materials at present. Excellent device performance key factor be this kind of material in process of growth can vertical-growth, current carrier decreases scattering in transmitting procedure so that the mobility of current carrier improves greatly, and then has very fast response speed and good high frequency characteristics.
Claims (6)
1. one kind has the two-dimentional transition metal chalcogenide homojunction photodetector of vertical-growth structure, it is characterized in that: described homojunction photoelectric detector is that the upper surface of insulating substrate (1) is provided with bottom electrode (2), and the upper surface at described bottom electrode (2) is provided with mask layer (3); Described mask layer (3) is insulating material, is provided with a through hole being connected with described bottom electrode (2) at the center of described mask layer (3); Be perpendicular to described bottom electrode (2) upper surface, growth has the N-type semiconductor material (4) in array structure to be positioned at described through hole, having the P-type semiconductor material (5) in array structure in the upper growth of described N-type semiconductor material (4), described N-type semiconductor material (4) forms PN homojunction with described P-type semiconductor material (5); Described mask layer (3) top is provided with upper current conducting cap (6), and described upper current conducting cap (6) does not exceed the border of mask layer (3) and covers through hole completely; Described bottom electrode (2) all forms ohmic contact with described N-type semiconductor material (4), described upper current conducting cap (6) with described P-type semiconductor material (5); Described semiconductor material is MoSe2Or MoS2��
2. homojunction photodetector according to claim 1, it is characterised in that: described bottom electrode (2) is Au electrode, Ti/Au electrode or Ag electrode; The thickness of described bottom electrode (2) is 20nm-300nm.
3. homojunction near infrared photodetector according to claim 2, it is characterised in that: described Ti/Au electrode deposits the Au that thickness is 30-60nm on the Ti that thickness is 10-50nm.
4. homojunction photodetector according to claim 1, it is characterised in that: described upper current conducting cap (6) is Graphene electrodes or noble metal electrode.
5. in a Claims 1 to 4 described in any one two dimension transition metal chalcogenide homojunction photodetector preparation method, it is characterised in that comprise the steps:
A, insulating substrate upper surface steam plating bottom electrode;
B, steam plating mask layer at the upper surface of described bottom electrode, and at the center of mask layer a reserved through hole being connected with described bottom electrode;
C, employing pulsed laser deposition or magnetron sputtering steam plating two dimension N-type semiconductor material in through hole, and N-type semiconductor material is that array structure is perpendicular to bottom electrode growth, and bottom electrode and N-type semiconductor material form ohmic contact; And then adopting pulsed laser deposition or magnetron sputtering extension P-type semiconductor material on described N-type semiconductor material, N-type semiconductor material and P-type semiconductor material form PN homojunction;
D, being arranged on mask layer by upper current conducting cap, make upper current conducting cap not exceed the border of mask layer and cover through hole completely, upper current conducting cap and P-type semiconductor material form ohmic contact, namely complete the preparation of homojunction near infrared photodetector.
6. preparation method according to claim 5, it is characterised in that: the processing condition being prepared N-type semiconductor material or P-type semiconductor material by pulsed laser deposition are: laser power to be 40��500mJ, optical maser wavelength be 248nm, pulse-repetition are 1��20Hz, air pressure is 0.1��10-5Pa��
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