CN105514622A - Four-frequency microstrip reflective array antenna - Google Patents
Four-frequency microstrip reflective array antenna Download PDFInfo
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- CN105514622A CN105514622A CN201511001077.1A CN201511001077A CN105514622A CN 105514622 A CN105514622 A CN 105514622A CN 201511001077 A CN201511001077 A CN 201511001077A CN 105514622 A CN105514622 A CN 105514622A
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- cross oscillator
- reflection array
- rectangular patch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
- H01Q21/061—Two dimensional planar arrays
- H01Q21/064—Two dimensional planar arrays using horn or slot aerials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
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- Waveguide Aerials (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
The invention relates to a four-frequency microstrip reflective array antenna which comprises a feed source and a microstrip reflective array. The feed source is a pyramidal horn antenna. The microstrip reflective array comprises a plurality of uniformly arranged single-layer cross-shaped oscillator units and double-layer rectangular plaster units, wherein the plurality of single-layer cross-shaped oscillator units are arranged in lines in the transverse direction and are arranged in rows in the longitudinal direction. Four double-layer rectangular plaster units are distributed at the periphery of each single-layer cross-shaped oscillator unit. The distances between the center of each single-layer cross-shaped oscillator unit and the four adjacent double-layer rectangular plaster units are same. The working frequencies of the four-frequency microstrip reflective array antenna are 9GHz, 13.58GHz, 24GHz and 30GHz. The single-layer cross-shaped oscillator units operate in 9GHz and 13.58GHz through two directions which are crossed with each other. The double-layer rectangular plaster units operate in 24GHz and 30GHz through two directions which are crossed with each other.
Description
Technical field
The invention belongs to antenna technical field, particularly a kind of four frequency microstrip reflection array antennas.
Background technology
Parabolic antenna and array antenna are applied widely as traditional satellite antenna.Although parabolic antenna gain is high, working band is wide, it has, and volume is large, weight large, install the shortcomings such as difficulty, processing difficulties, especially when high frequency.Although array antenna volume is little, scan mode is flexible and scope is comparatively large, and its efficiency is low, feeding network is complicated, loss is large, the active device of loading is expensive.These shortcomings limit above-mentioned two kinds of antenna application in radar, satellite communication etc. to a certain extent.
Microstrip reflectarray antenna is carried out combining and a kind of antenna form formed some advantages of parabolic antenna and array antenna, it is made up of feed and reflective array, undertaken designing by each unit in being poised for battle and make it that scattering phase place of feed radiated wave is carried out certain adjustment, make on array actinal surface, to form through the field of reflective array reflection the PHASE DISTRIBUTION wanted, thus give off the wave beam of setting.Compared with above-mentioned two kinds of high-gain aerials, microstrip reflectarray antenna tool has the following advantages: volume is little, lightweight, processing simple and cost is low, efficiency is higher, easily realize beam scanning, easily and carrier conformal etc.These advantages make reflective array antenna all have very high using value in military and civilian field.The major defect of microstrip reflectarray antenna is narrow bandwidth, limits its application to a certain extent.Along with the fast development of the communication technology, more and more higher to the requirement of antenna, the research of broadband and multifrequency reflective array is more and more urgent, and has very strong practical value.In existing document, most multifrequency is all confined to double frequency, for three frequency ranges and above design less.In the design of multifrequency microstrip reflective array, common are individual layer and double-deck two kinds of versions.Single layer structure is the version be all placed in by the unit of different frequency range on same layer dielectric substrate, and this is higher to the substantive requirements of form of unit.Double-decker can be divided into two kinds of different forms: low frequency front is placed on high frequency front and high frequency front is placed on low frequency front.
Summary of the invention
The object of the invention is to overcome the technical problem that the microstrip reflectarray antenna adopted in prior art is difficult to realize four band operation, thus a kind of four microstrip reflection array antennas are frequently provided, for microstrip reflection array antenna realize multifrequency or bore multiplexing there is important reference value.
To achieve these goals, the invention provides a kind of four frequency microstrip reflection array antennas, comprise: feed and microstrip reflection array, described feed is pyramidal horn antenna, and described microstrip reflection array comprises multiple evenly distributed individual layer cross oscillator unit and double-deck rectangular patch unit; Wherein,
Multiple individual layer cross oscillator unit is transversely arranged embarks on journey, and longitudinal arrangement is in column; The surrounding of each individual layer cross oscillator unit is distributed with four double-deck rectangular patch unit, and the center of four double-deck rectangular patch unit that the center of described cross oscillator unit is adjacent has identical distance; The operating frequency of this four frequencies microstrip reflection array antenna is respectively 9GHz, 13.58GHz, 24GHz and 30GHz, described individual layer cross oscillator unit works in 9GHz and 13.58GHz respectively by two crossing directions, and described double-deck rectangular patch unit works in 24GHz and 30GHz respectively by two crossing directions.
In technique scheme, determine the cell size size of described individual layer cross oscillator unit or double-deck rectangular patch unit in the following way:
First the required phase value compensated in microstrip reflection array unit position, following formulae discovery each frequency place is adopted:
Wherein, k
0the propagation constant in vacuum, the propagation constant difference that different frequencies is corresponding; (x
i, y
i) be the centre coordinate of i-th unit; d
irepresent the distance between feed phase center and i-th unit;
for radiation beam direction; Φ
r(x
i, y
i) be exactly the required phase place compensated of i-th unit;
After obtaining the phase value compensated needed for the unit of each position of microstrip reflection array, in conjunction with the reflected phase will curve at each frequency place, obtained the size of unit by linear difference algorithm.
In technique scheme, described individual layer cross oscillator unit comprises: cross oscillator, dielectric substrate, metal floor; Described cross oscillator is attached to the surface of described dielectric substrate, and the lower surface of described dielectric substrate is attached on described metal floor; Described cross oscillator adopts metal material to make.
In technique scheme, the grid cycle p of described individual layer cross oscillator unit is 13mm, and dielectric constant is 2.2, and cross oscillator is 1mm at the width w in x direction and y direction, and dielectric substrate thickness h is 1.5mm.
In technique scheme, when incident wave is y polarization, described individual layer cross oscillator unit is operated in 9GHz, and when incident wave is x polarization, described individual layer cross oscillator unit is operated in 13.58GHz.
In technique scheme, described double-deck rectangular patch unit comprises upper strata paster, lower floor's paster, and two layer medium substrate, metal floor; Described upper strata paster is attached to the upper surface of top dielectric substrate, and described lower floor paster is attached to the upper surface of layer dielectric substrate, and described layer dielectric substrate is attached on described metal floor; Described rectangular patch is made up of metal material.
In technique scheme, the grid cycle q of described double-deck rectangular patch unit is the half of individual layer cross oscillator unit grid cycle; The gross thickness of double-deck rectangular patch unit is identical with the thickness of individual layer cross oscillator unit; Dielectric constant is 2.2; The length of side of upper strata paster is k times of lower floor's paster length of side.
In technique scheme, the value of k is 0.65.
In technique scheme, when incident wave is y polarization, described double-deck rectangular patch cell operation is at 24GHz; When incident wave is x polarization, described double-deck rectangular patch cell operation is at 30GHz.
The invention has the advantages that:
Four frequency microstrip reflection array antennas of the present invention pass through the individual layer cross oscillator unit of setting and double-deck rectangular patch unit, and take into full account the mutual coupling between different frequency unit, make this antenna can be operated in 9GHz, 13.58GHz, 24GHz and 30GHz tetra-frequency places, thus it is multiplexing fully that the bore of reflectarray antenna is obtained simultaneously; Microstrip reflection array antenna of the present invention has four good radio-frequency radiation performances, is easy to Project Realization, and its structure is relatively simple, has higher engineer applied and is worth.
Accompanying drawing explanation
Fig. 1 is the vertical view of the microstrip reflection array in four frequency microstrip reflection array antennas of the present invention;
Fig. 2 is the structural representation of individual layer cross oscillator unit of the present invention;
Fig. 3 is the structural representation of double-deck rectangular patch unit of the present invention;
Fig. 4 be when double-deck rectangular patch unit exists cross oscillator unit at the reflected phase will curve at 9GHz place;
Fig. 5 be when double-deck rectangular patch unit exists cross oscillator unit at the reflected phase will curve at 13.58GHz place;
Fig. 6 is the reflected phase will curve of double-deck rectangular patch unit at 24GHz place when cross oscillator unit exists;
Fig. 7 is the reflected phase will curve of double-deck rectangular patch unit at 30GHz place when cross oscillator unit exists;
Fig. 8 is the structural representation of four frequency microstrip reflection array antennas of the present invention;
Fig. 9 is of the present invention four antenna patterns when frequently microstrip reflection array antennas are operated in 9GHz;
Figure 10 is of the present invention four antenna patterns when frequently microstrip reflection array antennas are operated in 13.58GHz;
Figure 11 is of the present invention four antenna patterns when frequently microstrip reflection array antennas are operated in 24GHz;
Figure 12 is of the present invention four antenna patterns when frequently microstrip reflection array antennas are operated in 30GHz.
Embodiment
Now the invention will be further described by reference to the accompanying drawings.
As shown in Figure 8, a kind of four frequency microstrip reflection array antennas of the present invention, comprise: feed and microstrip reflection array, described feed is pyramidal horn antenna, and described microstrip reflection array comprises multiple evenly distributed individual layer cross oscillator unit and double-deck rectangular patch unit.Wherein, multiple individual layer cross oscillator unit is transversely arranged embarks on journey, and longitudinal arrangement is in column; The surrounding of each individual layer cross oscillator unit is distributed with four double-deck rectangular patch unit, and the center of four double-deck rectangular patch unit that the center of described cross oscillator unit is adjacent has identical distance.The operating frequency of this antenna is respectively 9GHz, 13.58GHz, 24GHz and 30GHz, described individual layer cross oscillator unit works in 9GHz and 13.58GHz respectively by two crossing directions, and described double-deck rectangular patch unit works in 24GHz and 30GHz respectively by two crossing directions.
Below the various piece in this four frequencies microstrip reflection array antenna is described further.
Fig. 1 is the structural representation of microstrip reflection array surface.As shown in Figure 1, at the diverse location place of microstrip reflection array, the size of each unit there are differences that (wherein, the size of individual layer cross oscillator unit comprises the length of cross oscillator, as the L in Fig. 2
1, L
2; The size of double-deck rectangular patch unit comprises the size of double-layer paster contained by it, as a in Fig. 3
1, b
1, a
2, b
2), this is because the distance of diverse location place unit is different on feed to microstrip reflection array, cause the ripple sent from feed to arrive microstrip reflection array surface unit and produce phase difference, and reflectarray antenna realize focus beam requirement through microstrip reflection array unit reflection after ripple there is identical phase place, therefore carry out by the size of regulon the phase difference that compensatory reflex battle array unit brings due to range difference, microstrip reflective array is arranged and realizes in-phase stacking in particular directions.
When determining the size of diverse location place unit, first adopt the required phase value compensated in microstrip reflection array unit position, following formulae discovery each frequency place:
Wherein, k
0the propagation constant in vacuum, the propagation constant difference that different frequencies is corresponding; (x
i, y
i) be the centre coordinate of i-th unit; d
irepresent the distance between feed phase center and i-th unit;
for radiation beam direction; Φ
r(x
i, y
i) be exactly the required phase place compensated of i-th unit.
After obtaining the phase value compensated needed for the unit of each position of microstrip reflection array, in conjunction with the reflected phase will curve at each frequency place, just can be obtained the size of each unit by linear difference algorithm.
Fig. 2 is the structural representation of individual layer cross oscillator unit, and this unit comprises a cross oscillator, and a dielectric substrate, metal floor; Described cross oscillator is attached to the surface of described dielectric substrate.The lower surface of described dielectric substrate is close on metal floor.Described cross oscillator adopts metal material to make.Due to individual layer cross oscillator unit x direction and y direction separate, so size (the i.e. L of individual layer cross oscillator unit both direction can be regulated respectively
1or L
2), allow the change in size in an one direction realize the phase compensation of a frequency, the change in size in another direction realizes the phase compensation of another frequency, thus utilizes a unit to realize two different operating frequencies in different polarised directions.This unit is adopted to realize 9GHz and 13.58GHz two operating frequencies two different polarised directions in the present invention, wherein when incident wave is y polarization, individual layer cross oscillator unit is operated in 9GHz, and when incident wave is x polarization, individual layer cross oscillator unit is operated in 13.58GHz.The grid cycle p of this individual layer cross oscillator unit is 13mm, and dielectric constant is 2.2, the size (L of unit
1, L
2) determine according to described method above; The cross oscillator width w of individual layer cross oscillator unit, dielectric substrate thickness h obtain by the mode optimized at the frequency place of operating frequency, and it is better that the object of described optimization is to make the reflection characteristic of individual layer cross oscillator unit.As in an example, cross oscillator is all designed to 1mm at the width w of both direction, and dielectric thickness h is designed to 1.5mm.If grid cycle or dielectric constant change, generally also can there is respective change in the width w of cross oscillator and the value of dielectric thickness h, and occurrence needs to determine through optimization.
Fig. 3 is the structural representation of double-deck rectangular patch unit, and as shown in the figure, this unit comprises two-layer rectangular patch, i.e. upper strata paster, lower floor's paster, and dielectric substrate, metal floor.Described upper strata paster is attached to the upper surface of top dielectric substrate, and lower floor's paster is attached to the upper surface of layer dielectric substrate, and the lower surface of described layer dielectric substrate is close on metal floor.Described rectangular patch is made up of metal material.Due to double-deck rectangular patch unit x direction and y direction separate, so the size (a of rectangular patch unit both direction can be regulated respectively
1, b
1, a
2, b
2), allow the change in size in an one direction realize the phase compensation of a frequency, the change in size in another direction realizes the phase compensation of another frequency, thus utilizes a unit to realize two different operating frequencies in different polarised directions.This unit is adopted to realize 24GHz and 30GHz two operating frequencies two different polarised directions in the present invention, wherein when incident wave is y polarization, double-deck rectangular patch cell operation is at 24GHz, and when incident wave is x polarization, double-deck rectangular patch cell operation is at 30GHz.The grid cycle q of this double-deck rectangular patch unit is the half of individual layer cross oscillator unit grid cycle, i.e. q=6.5mm, the gross thickness (the thickness sum of top dielectric substrate and layer dielectric substrate) of double-deck rectangular patch unit is necessary for the thickness of above-mentioned individual layer cross oscillator unit, i.e. h=h
1+ h
2=1.5mm, in one embodiment, the every a layer thickness of double-deck rectangular patch unit is all designed to 0.75mm, i.e. h1=h2=0.75mm, and dielectric constant is 2.2; The length of side of upper strata paster is k times of lower floor's paster length of side.I.e. a
2=k*a
1, b
2=k*b
1, wherein a
1and b
1be respectively the length in x direction and y direction of lower floor's paster.A
2and b
2be respectively the length in x direction and y direction of upper strata paster.In order to make unit reflected phase will curve comparatively level and smooth and reflected phase will scope is comparatively large, show that the value of k is 0.65 through parameter sweep analysis.
In high-frequency electromagnetic simulation software HFSS, the reflection characteristic of above-mentioned two kinds of unit is analyzed, during analysis, consider the mutual coupling between cross oscillator unit and double-deck rectangular patch unit.Fig. 4 to give when double-deck rectangular patch unit exists cross oscillator unit at the reflected phase will curve at 9GHz place; Fig. 5 to give when double-deck rectangular patch unit exists cross oscillator unit at the reflected phase will curve at 13.58GHz place; Fig. 6 gives the reflected phase will curve of double-deck rectangular patch unit at 24GHz place when cross oscillator unit exists; Fig. 7 gives the reflected phase will curve of double-deck rectangular patch unit at 30GHz place when cross oscillator unit exists.These reflected phase will curves, can in the hope of the size of unit in conjunction with the required phase value compensated of unit of each position of microstrip reflection array.
As shown in Figure 9, for of the present invention four frequently microstrip reflection array antennas work in 9GHz time antenna pattern, in the present invention, when reflective array works in 9GHz, the polarization mode of its work is the linear polarization in y direction.As can be seen from the figure, when reflectarray antenna is operated in 9GHz, its radiation gain is 17.82dB.
As shown in Figure 10, for of the present invention four frequently microstrip reflection array antennas work in 13.58GHz time antenna pattern, in the present invention, when reflective array works in 13.58GHz, the polarization mode of its work is the linear polarization in x direction.As can be seen from the figure, when reflectarray antenna is operated in 13.58GHz, its radiation gain is 20.15dB.
As shown in figure 11, for of the present invention four frequently microstrip reflection array antennas work in 24GHz time antenna pattern, in the present invention, when reflective array works in 24GHz, the polarization mode of its work is the linear polarization in y direction.As can be seen from the figure, when reflectarray antenna is operated in 24GHz, its radiation gain is 26.47dB.
As shown in figure 12, for of the present invention four frequently microstrip reflection array antennas work in 30GHz time antenna pattern, in the present invention, when reflective array works in 30GHz, the polarization mode of its work is the linear polarization in x direction.As can be seen from the figure, when reflectarray antenna is operated in 30GHz, its radiation gain is 27.85dB.
Can be drawn by Fig. 9, Figure 10, Figure 11 and Figure 12, four frequency microstrip reflection array antennas of the present invention all have good radiance at 9GHz, 13.58GHz, 24GHz and 30GHz place.
It should be noted last that, above embodiment is only in order to illustrate technical scheme of the present invention and unrestricted.Although with reference to embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that, modify to technical scheme of the present invention or equivalent replacement, do not depart from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of right of the present invention.
Claims (9)
1. four frequency microstrip reflection array antennas, it is characterized in that, comprising: feed and microstrip reflection array, described feed is pyramidal horn antenna, and described microstrip reflection array comprises multiple evenly distributed individual layer cross oscillator unit and double-deck rectangular patch unit; Wherein,
Multiple individual layer cross oscillator unit is transversely arranged embarks on journey, and longitudinal arrangement is in column; The surrounding of each individual layer cross oscillator unit is distributed with four double-deck rectangular patch unit, and the center of four double-deck rectangular patch unit that the center of described cross oscillator unit is adjacent has identical distance; The operating frequency of this four frequencies microstrip reflection array antenna is respectively 9GHz, 13.58GHz, 24GHz and 30GHz, described individual layer cross oscillator unit works in 9GHz and 13.58GHz respectively by two crossing directions, and described double-deck rectangular patch unit works in 24GHz and 30GHz respectively by two crossing directions.
2. four frequency microstrip reflection array antennas according to claim 1, is characterized in that, determine the cell size size of described individual layer cross oscillator unit or double-deck rectangular patch unit in the following way:
First the required phase value compensated in microstrip reflection array unit position, following formulae discovery each frequency place is adopted:
Wherein, k
0the propagation constant in vacuum, the propagation constant difference that different frequencies is corresponding; (x
i, y
i) be the centre coordinate of i-th unit; d
irepresent the distance between feed phase center and i-th unit;
for radiation beam direction; Φ
r(x
i, y
i) be exactly the required phase place compensated of i-th unit;
After obtaining the phase value compensated needed for the unit of each position of microstrip reflection array, in conjunction with the reflected phase will curve at each frequency place, obtained the size of unit by linear difference algorithm.
3. four frequency microstrip reflection array antennas according to claim 1, it is characterized in that, described individual layer cross oscillator unit comprises: cross oscillator, dielectric substrate, metal floor; Described cross oscillator is attached to the surface of described dielectric substrate, and the lower surface of described dielectric substrate is attached on described metal floor; Described cross oscillator adopts metal material to make.
4. four frequency microstrip reflection array antennas according to claim 3, it is characterized in that, the grid cycle p of described individual layer cross oscillator unit is 13mm, and dielectric constant is 2.2, cross oscillator is 1mm at the width w in x direction and y direction, and dielectric substrate thickness h is 1.5mm.
5. four frequency microstrip reflection array antennas according to claim 1, it is characterized in that, when incident wave is y polarization, described individual layer cross oscillator unit is operated in 9GHz, when incident wave is x polarization, described individual layer cross oscillator unit is operated in 13.58GHz.
6. four frequency microstrip reflection array antennas according to claim 1, it is characterized in that, described double-deck rectangular patch unit comprises upper strata paster, lower floor's paster, and two layer medium substrate, metal floor; Described upper strata paster is attached to the upper surface of top dielectric substrate, and described lower floor paster is attached to the upper surface of layer dielectric substrate, and described layer dielectric substrate is attached on described metal floor; Described rectangular patch is made up of metal material.
7. four frequency microstrip reflection array antennas according to claim 6, it is characterized in that, the grid cycle q of described double-deck rectangular patch unit is the half of individual layer cross oscillator unit grid cycle; The gross thickness of double-deck rectangular patch unit is identical with the thickness of individual layer cross oscillator unit; Dielectric constant is 2.2; The length of side of upper strata paster is k times of lower floor's paster length of side.
8. four frequency microstrip reflection array antennas according to claim 7, it is characterized in that, the value of k is 0.65.
9. four frequency microstrip reflection array antennas according to claim 1, it is characterized in that, when incident wave is y polarization, described double-deck rectangular patch cell operation is at 24GHz; When incident wave is x polarization, described double-deck rectangular patch cell operation is at 30GHz.
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| CN201511001077.1A CN105514622B (en) | 2015-12-28 | 2015-12-28 | A kind of four frequency microstrip reflection array antennas |
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| CN105514622B CN105514622B (en) | 2018-11-13 |
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|---|---|---|---|---|
| CN106356626A (en) * | 2016-08-24 | 2017-01-25 | 江苏省东方世纪网络信息有限公司 | Array antenna |
| CN106911001A (en) * | 2017-02-09 | 2017-06-30 | 南京邮电大学 | A kind of dynamic multi-frequency multi-beam space arbitrary scan reflective array |
| CN108180820A (en) * | 2017-12-30 | 2018-06-19 | 北京工业大学 | A kind of omnidirectional's strain detecting method based on Circular microstrip patch antenna |
| CN108711679A (en) * | 2018-04-13 | 2018-10-26 | 南京邮电大学 | A kind of tunable fluid level reflectarray antenna |
| CN109560373A (en) * | 2018-11-22 | 2019-04-02 | 中国人民解放军空军工程大学 | A kind of reflective array antenna with low RCS characteristic |
| CN111786090A (en) * | 2020-07-06 | 2020-10-16 | 电子科技大学 | Planar broadband transmission array antenna based on liquid crystal adjustable material |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106911001A (en) * | 2017-02-09 | 2017-06-30 | 南京邮电大学 | A kind of dynamic multi-frequency multi-beam space arbitrary scan reflective array |
| CN106911001B (en) * | 2017-02-09 | 2019-10-22 | 南京邮电大学 | A kind of dynamic multi-frequency multi-beam space arbitrary scan reflective array |
| CN108180820A (en) * | 2017-12-30 | 2018-06-19 | 北京工业大学 | A kind of omnidirectional's strain detecting method based on Circular microstrip patch antenna |
| CN108711679A (en) * | 2018-04-13 | 2018-10-26 | 南京邮电大学 | A kind of tunable fluid level reflectarray antenna |
| CN108711679B (en) * | 2018-04-13 | 2020-05-12 | 南京邮电大学 | Tunable liquid plane reflection array antenna |
| CN109560373A (en) * | 2018-11-22 | 2019-04-02 | 中国人民解放军空军工程大学 | A kind of reflective array antenna with low RCS characteristic |
| CN109560373B (en) * | 2018-11-22 | 2020-11-03 | 中国人民解放军空军工程大学 | Reflective array antenna with low RCS characteristic |
| CN111786090A (en) * | 2020-07-06 | 2020-10-16 | 电子科技大学 | Planar broadband transmission array antenna based on liquid crystal adjustable material |
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|---|---|
| CN105514622B (en) | 2018-11-13 |
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