CN105448765B - Thickness of metal film measuring method - Google Patents
Thickness of metal film measuring method Download PDFInfo
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- CN105448765B CN105448765B CN201510894224.6A CN201510894224A CN105448765B CN 105448765 B CN105448765 B CN 105448765B CN 201510894224 A CN201510894224 A CN 201510894224A CN 105448765 B CN105448765 B CN 105448765B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
A kind of measuring method of thickness of metal film, methods described include：The product wafer of multiple online productions is provided；The metallic film of different-thickness is formed on different product wafer；Measure the radius of curvature value that each product wafer is formed after metallic film；Calculate the depth of camber value of each product wafer；Thickness of metal film on multiple product wafers and its each self-corresponding depth of camber value are subjected to data fitting, obtain thickness of metal film and the relational expression of depth of camber value；Product wafer to be measured is provided, metallic film to be measured is formed in product crystal column surface to be measured；The radius of curvature of product wafer is measured, obtains radius of curvature value to be measured；Depth of camber value to be measured is calculated by radius of curvature value to be measured；Depth of camber to be measured is substituted into thickness of metal film and the relational expression of depth of camber value, obtains thickness of metal film value to be measured.Methods described can avoid that product wafer is caused to damage, and realize the on-line measurement of thickness of metal film.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of thickness of metal film measuring method.
Background technology
In the manufacturing process of semiconductor devices, it usually needs metallic film is formed on wafer, to form metal interconnection
Layer, metal thin film resistor etc., the thickness of metallic film have as important parameter, the performance of the semiconductor devices for ultimately forming
There is important influence.So pair being particularly important with the measurement of thickness of metal film.
At present, existing THIN FILM THICKNESS MEASUREMENT TECHNIQUES mainly has light path measurement, Square resistance measurement and X-ray measurement.Light
The main refraction effect by film to light of drive test amount, by measuring incident light and emergent light angle, film thickness is obtained, but
It is due to that metallic film has an opaque attribute, light path measurement can not correct measurement its thickness；Square resistance measurement method is then
It is the square resistance by measuring film, obtains the thickness of film, it is necessary to apply voltage using probe, obtain resistance value, easily
Metallic film and wafer are caused to damage；X-ray measurement, using X ray as measurement means, because the energy of X ray is higher,
Also easily metallic film and wafer are caused to damage, when on wafer formed with device, easily device made using the above method
Into damage, product failure is caused.So in the fabrication processing of semiconductor devices, the above method can not realize to
The measurement of the thickness of metal film of line product.
So a kind of measuring method of thickness of metal film is needed badly, to realize that the thickness of metal film of online product measures.
The content of the invention
It is of the invention to solve the problems, such as to be to provide a kind of thickness of metal film measuring method, realize the online of thickness of metal film
Measurement.
To solve the above problems, the present invention provides a kind of thickness of metal film measuring method, including：There is provided multiple online raw
The product wafer of production；Form the metallic film of different-thickness respectively on different product wafer；Each product wafer is measured respectively
The radius of curvature formed after metallic film, obtain radius of curvature value；By the radius of curvature value, each product wafer is calculated
Depth of camber, respectively obtains the depth of camber value that each product wafer is formed after metallic film, and the depth of camber refers to wafer
The distance between horizontal plane at upper warpage and where crystal round fringes；By the thickness of metal film on multiple product wafers and its each
Corresponding depth of camber value carries out data fitting, obtains thickness of metal film and the relational expression of depth of camber value；There is provided to be measured
Product wafer, metallic film to be measured is formed in the product crystal column surface to be measured；Measure the formation metal foil to be measured
The radius of curvature of product wafer after film, obtain radius of curvature value to be measured；Calculated by the radius of curvature value to be measured
To depth of camber value to be measured；The depth of camber to be measured is substituted into thickness of metal film and the relational expression of depth of camber value
It is interior, obtain thickness of metal film value to be measured.
Optionally, the quantity of the product wafer of the online production is two or more.
Optionally, in addition to：Multiple test wafers are provided, different-thickness is formed respectively on the multiple test wafer surface
Test metallic film, by metering system measurement under line obtain it is each test metallic film thickness value；The test wafer
Quantity it is identical with the quantity of product wafer.
Optionally, each product wafer and test wafer are corresponded, using with forming test gold on the test die
Belong to film identical technique and technological parameter, metallic film is being formed on product wafer corresponding to the test wafer so that production
Metallic film on product wafer has identical thickness with the test metallic film on corresponding test wafer.
Optionally, corresponding to sedimentation rate, sedimentation time and the product wafer that metallic film is formed on product wafer
Test wafer on to form the test sedimentation rate of metallic film, sedimentation time identical.
Optionally, metering system includes under the line：X-ray measurement, Square resistance measurement.
Optionally, the thickness of the metallic film is more than 0.
Optionally, there is provided a product wafer, now with the first thickness of metal film, first thickness of metal film
For 0, measurement obtains the radius of curvature of the product wafer, obtains first curvature radius value；Pass through the first curvature radius value meter
The depth of camber of product wafer is calculated, obtains the first depth of camber value；Metallic film, the gold are formed in the product crystal column surface
Category film has the second thickness of metal film；The radius of curvature for the product wafer that measurement surface is formed after metallic film, obtains the
Two radius of curvature values；The depth of camber of the product wafer formed by the second curvature radius value gauging surface after metallic film,
Obtain the second depth of camber value；The first thickness of metal film, the first warpage height product crystal column surface formed before metallic film
Angle value carries out data plan with the second thickness of metal film after product crystal column surface formation metallic film, the second depth of camber value
Close, obtain thickness of metal film and the relational expression of depth of camber value.
Optionally, the radius of curvature that product wafer is formed after metallic film be R, sticking up after product wafer formation metallic film
Bent height value is H, and H=R-R × cos (ARC/2R), ARC are brilliant diameter of a circle.
Optionally, the thickness of metallic film and depth of camber value are linear.
Compared with prior art, technical scheme has advantages below：
Technical scheme, the pass of the thickness of the metallic film and the depth of camber value of product wafer is obtained in advance
System's formula, then when the thickness of metal film to be measured formed on to same product wafer measures, it is only necessary to pass through measurement
The radius of curvature value to be measured of the product wafer formed with metallic film to be measured, by calculating, obtaining should be formed with to be measured
The depth of camber value to be measured of the product wafer of metallic film, substitutes into the thickness of metallic film and the depth of camber value of product wafer
Relational expression, the thickness value with regard to metallic film to be measured can be obtained.So as to be changed into the measurement of thickness of metal film to product
The measurement of wafer radius of curvature.Because the measurement to product wafer radius of curvature easily enters on line to measure, and will not be to production
Product wafer causes to damage, so, on-line measurement can not be realized by overcoming when prior art measures to thickness of metal film, with
And the problem of damage is easily caused to product wafer.
Brief description of the drawings
Fig. 1 is the product wafer schematic diagram provided in embodiments of the invention；
Fig. 2 is the schematic diagram after product crystal column surface forms metallic film in embodiments of the invention；
Fig. 3 is in embodiments of the invention, and using W film thicknesses as abscissa, depth of camber is the fitting obtained by ordinate
Curve synoptic diagram.
Embodiment
As described in the background art, current several measured film thickness methods can not complete the metal foil of online product
The measurement of film thickness.
In embodiments of the invention, pass through the measurement to wafer radius of curvature, thus it is speculated that the thickness of metallic film, measuring method
Simply, and damage will not be produced to wafer.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
It refer to Fig. 1, there is provided the product wafer 100 of multiple online productions.
The product wafer of online production refers to the wafer that device is already formed with by multiple tracks technological process.Due to being surveyed under line
Amount method, easily wafer is caused to damage, cause the device on product wafer to be destroyed, so that the product ultimately formed
Failure.
The quantity of the product wafer 100 of the online production can be more than one or two.The multiple product is brilliant
Circle is using same technique, the product wafer formed with identical material layer, identity unit.In the present embodiment, one is only provided
Individual product wafer 100.
Each device, the material that the product wafer 100 is formed due to self gravitation and on the product wafer 100
The stress of layer, the product wafer 100 can occur warpage, have certain curvature.
The radius of curvature of the product wafer 100 can be measured, obtain the product by stress measurement board
The radius of curvature value R1 of wafer 100.In other embodiments of the invention, product wafer can also be measured by other method
Radius of curvature.Now, the surface of product wafer 100 is formed without metallic film, it is believed that the surface of product wafer 100
Metallic film there is the first thickness of metal film, and first thickness of metal film is 0.So now, measure the song of acquisition
Rate radius R1 is radius of curvature when thickness of metal film is 0.
By the radius of curvature R 1, the depth of camber of the product wafer 100 can be calculated.The depth of camber is
Refer to the distance between at warpage and product wafer frontside edge place horizontal plane on product wafer 100.The product wafer 100
Depth of camber value H1 and the relation of radius of curvature R 1 are：H1=R1-R1 × cos (ARC/2R1), wherein, ARC is that the product is brilliant
The diameter of circle 100, is known numeric value.In the present embodiment, a diameter of 200mm of the product wafer 100, so H1=R1-R1
×cos(0.2/2R1)。
In the present embodiment, by measuring the radius of curvature of the product wafer 100, when obtaining thickness of metal film h1=0,
Radius of curvature value R1, the depth of camber value H1 of product wafer 100.
Fig. 2 is refer to, metallic film 101 is formed on the surface of product wafer 100, the metallic film 101 has the
Two thickness of metal film h2.
Due to the surface of product wafer 100 formed metallic film 101 after, due to metallic film 101 gravity with
And stress, the warpage degree of the product wafer 100 change.
By stress measurement board, the radius of curvature of the product wafer 100 formed with metallic film 101 is entered again
Row measurement, obtain the radius of curvature value R2 of now product wafer 100.Now, the metallic film on the surface of product wafer 100
Thickness is h2.So now, the radius of curvature value R2 for measuring acquisition corresponds to radius of curvature when thickness of metal film is h2.
By the radius of curvature R 2, the warpage that can calculate the product wafer 100 formed with metallic film 101 is high
Degree.The depth of camber value H2 and the relation of radius of curvature R 2 of the product wafer 100 be：H2=R2-R2 × cos (ARC/2R2),
Wherein, ARC is the diameter of the product wafer 100, is known numeric value.In the present embodiment, the product wafer 100 it is a diameter of
200mm, so H2=R2-R2 × cos (0.2/2R2).
And the measurement of the thickness of metal film h2 can then use measuring method under line to carry out.In the present embodiment, in order to
Avoid measuring method under line from causing to damage to product wafer 100, obtain thickness of metal film value h2 in the following way：There is provided and survey
Wafer is tried, the test wafer can be the common wafer for being formed without device；Formed on the test wafer certain thick
The test metallic film of degree, the thickness of the test metallic film is then measured by measuring method under line, obtains the test
The thickness value of metallic film；When forming metallic film 101 on the product wafer 100, using with forming the test metal
Film identical depositing operation, technological parameter form the metallic film 101, so that the metallic film 101 formed is with surveying
The thickness for trying metallic film is identical.Specifically, during metallic film 101 is formed, have with forming test metallic film
Identical sedimentation rate and sedimentation time.The method measured under the line includes：X-ray measurement, Square resistance measurement.
In the present embodiment, the radius of curvature of the product wafer 100 formed by measurement after metallic film 101, metal is obtained
When film thickness is h2, radius of curvature value R2, the depth of camber value H2 of product wafer 100.
Finally, by the first thickness of metal film h1 before the surface of product wafer 100 formation metallic film 101, the first warpage
Height value H1 and the second thickness of metal film h2 after the surface of product wafer 100 formation metallic film 101, the second depth of camber value
H2 carries out data fitting, obtains thickness of metal film h and depth of camber value H relational expression.
Specifically, the first thickness of metal film h1, the first depth of camber value H1 form data point (h1, H1), described
Second thickness of metal film h2, the second depth of camber value H2 form data point (h2, H2).Inventor had found by test of many times,
The depth of camber value of the thickness of metallic film and product wafer is linear, and according to 2 points decision straight line principles,
The thickness h and the warpage height of product wafer of metallic film can be just obtained by above-mentioned two data point (h1, H1), (h2, H2)
Angle value H relational expression：H=[(H2-H1)/(h2-h1)] × (h-h1)+H1.
In the present embodiment, the h1=0, H=[(H2-H1)/h2] × h+H1.
After obtaining the thickness h of the metallic film and the depth of camber value H of product wafer relational expression, subsequently to same
Product wafer on the thickness of metal film to be measured that is formed when measuring, it is only necessary to measure this formed with metallic film to be measured
The radius of curvature to be measured of product wafer, by calculating, obtain the to be measured of the product wafer formed with metallic film to be measured
Depth of camber value H ', substitute into above-mentioned relation formula, the thickness value h ' with regard to metallic film to be measured can be obtained.So that will be to metal foil thickness
The measurement of degree is changed into the measurement to product wafer radius of curvature.Because line is easily entered in the measurement to product wafer radius of curvature
Upper measurement, and will not causing to damage to product wafer, so, when overcoming prior art thickness of metal film being measured
The problem of on-line measurement can not be realized, and damage is easily caused to product wafer.
In other embodiments of the invention, in the thickness h and the depth of camber value H of product wafer for obtaining metallic film
During relational expression, multiple product wafers can also be provided, the quantity of the product wafer is more than or equal to two.
In one embodiment of the invention, the quantity of the product wafer is n, and shape is distinguished on different product wafer
Into the metallic film of different-thickness, the thickness of the metallic film is more than or equal to 0, respectively hI (i=1,2 ..., n)；Then distinguish
The radius of curvature that each product wafer is formed after metallic film is measured, obtains the radius of curvature value of each product wafer
RI (i=1,2 ..., n)；Pass through each radius of curvature value RI (i=1,2 ..., n), the depth of camber of each product wafer is calculated, is distinguished
Obtain the depth of camber value H that each product wafer is formed after metallic filmI (i=1,2 ..., n).Metal on the n product wafer
Film thickness hI (i=1,2 ..., n)And its each self-corresponding depth of camber value HI (i=1,2 ..., n)Form n data point (h1, H1)、(h2,
H2)、……、(hn, Hn), above-mentioned data are subjected to data fitting, obtain thickness of metal film h and depth of camber value H relation
Formula.
Wherein, the thickness of metal film h on each product waferI (i=1,2 ..., n)It can be obtained by way of being measured under line
, specific method includes：N test wafer is provided, the quantity of the test wafer is consistent with product wafer number；In the n
Individual test wafer surface forms the test metallic film of different-thickness respectively, and each test is obtained by metering system measurement under line
The thickness value h ' of metallic filmI (i=1,2 ..., n)；Then by n product wafer and n test wafer one-to-one corresponding, using with
Test metallic film identical technique and technological parameter are formed on test wafer, it is brilliant in each self-corresponding product of the test wafer
Metallic film is formed on circle so that the metallic film on product wafer has with the test metallic film on corresponding test wafer
Identical thickness h 'I (i=1,2 ..., n), i.e. hI (i=1,2 ..., n)=h 'I (i=1,2 ..., n).Specifically, form metal foil on product wafer
Deposition speed of the sedimentation rate, sedimentation time of film with forming test metallic film on the test wafer corresponding to the product wafer
Rate, sedimentation time are identical.
When the thickness of metal film to be measured formed on to same product wafer measures, it is only necessary to measurement formed with
The radius of curvature R to be measured of the product wafer of metallic film to be measured ', by calculating, obtain the warpage to be measured of the product wafer
Height value H ', thickness of metal film h and depth of camber value H relational expression, the thickness value h ' with regard to metallic film to be measured can be obtained.
In the embodiment, using multiple data point (h1, H1)、(h2, H2)、……、(hn, Hn) be fitted, obtain metal
Film thickness h and depth of camber value H relational expression, can reduce thickness of metal film hI (i=1,2 ..., n)、RI (i=1,2 ..., n)Number
According to the influence of measurement error, the accuracy of the thickness of metal film h and depth of camber value H of formation relational expression is improved, so as to carry
The high accuracy to thickness of metal film to be measured measurement.
Preferably, the quantity of the product wafer is optimal when being 3~5, measurement error can be reduced, and can, which improves, to be obtained
Thickness of metal film h and depth of camber value H relational expression efficiency, save process costs.
In one particular embodiment of the present invention, there is provided 6 identical product wafers, a diameter of 200mm, producing respectively
After forming the W films of different-thickness on product wafer, the radius of curvature of each product wafer is measured, and calculates and obtains each product wafer
Depth of camber value, obtain following data：
Above-mentioned radius of curvature is the data that measurement obtains when the scanning angle of stress measurement board is 0 °, so, all
It is the radius of curvature at the same position of different product wafer.
Fig. 3 is refer to, according to above-mentioned data, using W film thicknesses as abscissa, depth of camber is the fitting obtained by ordinate
Curve synoptic diagram.Above-mentioned data point is fitted to obtain linear relationship.It is computed, the relational expression of the linearity curve is H=
0.004h-10.56, wherein H are depth of camber value, and h is the thickness of W films.
After W films being formed subsequently on same product wafer to be measured, it is only necessary to measure the song of the product wafer to be measured
Rate radius, set-back height H is calculated, substitutes into above-mentioned relation formula, the thickness with regard to the W films can be obtained.
In other embodiments of the invention, the thickness of metal film that will can also be formed on multiple product wafers
hI (i=1,2 ..., n), radius of curvature value RI (i=1,2 ..., n)And depth of camber HI (i=1,2 ..., n)Data, database is formed, is being treated
When thickness of metal film to be measured on measurement product wafer measures, it is only necessary to measure its radius of curvature, correspondence database
In identical data, it is possible to thickness of metal film and depth of camber value corresponding to obtaining.Now, the quantity of product wafer needs
It is as far as possible more, to establish the database of working majority evidence, to improve the accuracy of measurement.
In the production technological process of reality, during the product crystal column surface formation metal film of online production,
Often occur in the product that reports an error, such as deposition process, for example reaction cavity temperature, gas flow generation exception etc. cause flow
Interrupt, now metallic film does not deposit completion also, now it should be understood that the thickness of established metallic film, is subsequently with decision
No needs are done over again.Now if entering under line to measure to the thickness of metal film on the product wafer, easily wafer is caused to cause
Damage, causes product failure.In embodiments of the invention, it is only necessary to for the product wafer, using the above method, obtain the production
The set-back height of product wafer and the relational expression between the thickness of metal film that its surface is formed, then be actually formed metallic film
During, once there is the abnormal product of alarm, it is only necessary to measure the radius of curvature of the product wafer, it is possible to which reckoning has been formed
Metallic film thickness, method is simple, quick, and product wafer will not be caused to damage.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, this is not being departed from
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (9)
- A kind of 1. measuring method of thickness of metal film, it is characterised in that including：The product wafer of multiple online productions is provided；Form the metallic film of different-thickness respectively on different product wafer；The radius of curvature that each product wafer is formed after metallic film is measured respectively, obtains radius of curvature value；By the radius of curvature value, the depth of camber of each product wafer is calculated, each product wafer is respectively obtained and forms gold Belong to the depth of camber value after film, the depth of camber refer on wafer at warpage between horizontal plane where crystal round fringes away from From；Thickness of metal film on multiple product wafers and its each self-corresponding depth of camber value are subjected to data fitting, obtain gold Belong to film thickness and the relational expression of depth of camber value；Product wafer to be measured is provided, metallic film to be measured is formed in the product crystal column surface to be measured；The radius of curvature of the product wafer after the formation metallic film to be measured is measured, obtains radius of curvature value to be measured；Depth of camber value to be measured is calculated by the radius of curvature value to be measured；The depth of camber to be measured is substituted into thickness of metal film with the relational expression of depth of camber value, obtaining metal to be measured Film thickness value；Wherein, the radius of curvature that product wafer is formed after metallic film be R, the depth of camber after product wafer formation metallic film It is brilliant diameter of a circle to be worth for H, H=R-R × cos (ARC/2R), ARC.
- 2. the measuring method of thickness of metal film according to claim 1, it is characterised in that the product of the online production The quantity of wafer is two or more.
- 3. the measuring method of thickness of metal film according to claim 1, it is characterised in that also include：Multiple surveys are provided Wafer is tried, the test metallic film of different-thickness is formed respectively on the multiple test wafer surface, passes through metering system under line Measurement obtains the thickness value of each test metallic film；The quantity of the test wafer is identical with the quantity of product wafer.
- 4. the measuring method of thickness of metal film according to claim 3, it is characterised in that by each product wafer with surveying Try wafer to correspond, metallic film identical technique and technological parameter are tested using with being formed on the test die, described Metallic film is formed on product wafer so that metallic film and corresponding test wafer on product wafer corresponding to test wafer On test metallic film there is identical thickness.
- 5. the measuring method of thickness of metal film according to claim 3, it is characterised in that form metal on product wafer Deposition of the sedimentation rate, sedimentation time of film with forming test metallic film on the test wafer corresponding to the product wafer Speed, sedimentation time are identical.
- 6. the measuring method of thickness of metal film according to claim 3, it is characterised in that metering system bag under the line Include：X-ray measurement, Square resistance measurement.
- 7. the measuring method of thickness of metal film according to claim 1, it is characterised in that the thickness of the metallic film More than 0.
- 8. the measuring method of thickness of metal film according to claim 1, it is characterised in that a product wafer is provided, Now there is the first thickness of metal film, first thickness of metal film is 0, and measurement obtains the curvature half of the product wafer Footpath, obtain first curvature radius value；The depth of camber of product wafer is calculated by the first curvature radius value, obtains the first warpage Height value；Metallic film is formed in the product crystal column surface, the metallic film has the second thickness of metal film；Measurement table The radius of curvature of product wafer after face formation metallic film, obtains second curvature radius value；Pass through the second curvature radius value The depth of camber of product wafer after gauging surface formation metallic film, obtains the second depth of camber value；By product crystal column surface After forming the first thickness of metal film before metallic film, the first depth of camber value and product crystal column surface formation metallic film Second thickness of metal film, the second depth of camber value carry out data fitting, obtain thickness of metal film and the pass of depth of camber value It is formula.
- 9. the measuring method of thickness of metal film according to claim 1, it is characterised in that the thickness of metallic film is with sticking up Bent height value is linear.
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| CN107623051B (en) * | 2017-08-30 | 2020-11-13 | 平煤隆基新能源科技有限公司 | Treatment process of film-coated film thickness bias slice in PECVD procedure |
| CN107478171B (en) * | 2017-08-31 | 2019-10-18 | 长江存储科技有限责任公司 | A kind of monitoring method and monitoring device of buckling deformations |
| WO2023108530A1 (en) * | 2021-12-16 | 2023-06-22 | Yangtze Memory Technologies Co., Ltd. | Prediction of wafer flatness |
| CN114858065B (en) * | 2022-04-26 | 2024-02-20 | 兰州空间技术物理研究所 | Method for detecting thickness of flexible siloxane film |
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| CN1605851A (en) * | 2004-11-19 | 2005-04-13 | 东南大学 | Method for measuring multilayer film stress on silicon slice |
| CN104089582A (en) * | 2014-07-07 | 2014-10-08 | 深圳市华星光电技术有限公司 | Metal film optical detection device and detection method |
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| JPH1032233A (en) * | 1996-07-15 | 1998-02-03 | Seiko Epson Corp | Silicon wafer, glass wafer and measurement of stress using them |
| JPH10311709A (en) * | 1997-05-09 | 1998-11-24 | Denso Corp | Method for measuring thickness of wafer where thin film is formed |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1605851A (en) * | 2004-11-19 | 2005-04-13 | 东南大学 | Method for measuring multilayer film stress on silicon slice |
| CN104089582A (en) * | 2014-07-07 | 2014-10-08 | 深圳市华星光电技术有限公司 | Metal film optical detection device and detection method |
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