CN105439080B - Mems device and forming method thereof - Google Patents
Mems device and forming method thereof Download PDFInfo
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- CN105439080B CN105439080B CN201410432240.9A CN201410432240A CN105439080B CN 105439080 B CN105439080 B CN 105439080B CN 201410432240 A CN201410432240 A CN 201410432240A CN 105439080 B CN105439080 B CN 105439080B
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Abstract
A kind of mems device of present invention offer and forming method thereof, the forming method of the mems device, including：First Semiconductor substrate is provided；Form the sacrifice layer positioned at the first semiconductor substrate surface；The float electrode structure through the sacrifice layer is formed, the float electrode structure includes the supporting construction and the electrode structure in supporting construction positioned at the first semiconductor substrate surface；Formed and be located in sacrifice layer and positioned at the limiting structure of the first semiconductor substrate surface；The sacrifice layer is removed, float electrode structure, limiting structure and the semiconductor substrate surface of part first is exposed；The second Semiconductor substrate is provided, second Semiconductor substrate is connected to the first semiconductor substrate surface and forms closed cavity, float electrode structure and limiting structure are located inside the closed cavity.Limiting structure limits the maximum activity distance of electrode structure, it is to avoid overload breakage occurs for supporting construction to cause component failure.
Description
Technical field
The present invention relates to semiconductor applications, more particularly to a kind of mems device and forming method thereof.
Background technology
MEMS (Micro Electro Mechanical System, MEMS) refers to collection microsensor, performed
Device and signal transacting and control circuit, interface circuit, communication and power supply are in the Micro Electro Mechanical System of one.It is with semiconductor system
Make and grow up based on technology, its manufacturing process is compatible with integrated circuit technique, is widely used the light in semiconductor technology
A series of prior art and the materials such as quarter, burn into film, but MEMS is more focused on ultraprecise machining, its mesh
Mark is by being miniaturized of system, integrated explored with new principle, the element of New function and system.Mems device
The characteristics of with miniaturization, intelligent, multi-functional, high integration and suitable for producing in enormous quantities.
Existing class mems device is by components such as the mechanical movable parts, electronic circuit, sensor of miniaturization
It is integrated on one block of silicon plate, is widely used in the various microcomputers such as speed, pressure, acceleration, gas, magnetic, light, sound, biology, chemistry
Electric inductor.Due to the characteristic size of mems device micron dimension so that these inductors can complete some tradition
The irrealizable function of mechanical pick-up device institute, for example, use in the place in narrow place or inclement condition, and due to machinery
Movable part quality is small so that its high-speed motion is possibly realized.This kind of mems device is because size is small, application function is special
Very, while being limited by manufacturing process, system component especially mechanical movable part easily under extreme operating conditions failure and
Function can not be recovered.
The content of the invention
The problem of present invention is solved is the protection activity by being distributed to form some limiting structures in float electrode structure peripheral
Electrode structure will not be because movable displacement is excessive and makes the supporting construction hair of the support electrode structure motion in electrode structure
Raw expendable overload breakage, so as to reduce the failure probability of mems device, extends the service life of device.
To solve the above problems, the invention provides a kind of forming method of mems device, including：There is provided first
Semiconductor substrate；Form the sacrifice layer positioned at the first semiconductor substrate surface；Form the float electrode knot through the sacrifice layer
Structure, the float electrode structure includes the supporting construction and the electrode in supporting construction positioned at the first semiconductor substrate surface
Structure；Formed and be located in sacrifice layer and positioned at the limiting structure of the first semiconductor substrate surface；The sacrifice layer is removed, is exposed
Float electrode structure, limiting structure and the semiconductor substrate surface of part first；There is provided the second Semiconductor substrate, described the second half lead
Body substrate is connected to the first semiconductor substrate surface and forms closed cavity, and float electrode structure and limiting structure are positioned at described close
Close cavity inside.
Optionally, the limiting structure is located at float electrode structure peripheral, and limiting structure is suitable to protection float electrode structure
In supporting construction.
Optionally, the number of the limiting structure is at least 2, and the limiting structure is at least along float electrode structure
Activity direction is distributed in float electrode structure both sides.
Optionally, the clearance distance between the limiting structure and float electrode structure is
Optionally, the material of the limiting structure is insulating material silicon oxide, silicon nitride, silicon oxynitride or oxidation of coal
Silicon.
Optionally, the float electrode structure includes the first float electrode structure and the second float electrode structure, and first lives
Moving electrode structure and the second float electrode structure are adjacent but do not contact with each other, the first float electrode structure and the second float electrode knot
The clearance distance of structure is
Such as optional, first supporting construction of the first float electrode structure including being located at the first semiconductor substrate surface
With the first electrode structure in the first supporting construction, the second float electrode structure includes being located at the first Semiconductor substrate
Second supporting construction on surface and the second electrode structure in the second supporting construction.
Optionally, the material of first supporting construction and the second supporting construction is silicon, germanium or germanium silicon, first electricity
The material of pole structure and second electrode structure is silicon, germanium or germanium silicon.
Optionally, the second electrode of the first electrode structure of the first float electrode structure and the second float electrode structure
The activity direction of structure is parallel to the first semiconductor substrate surface.
Optionally, drive circuit, float electrode structure and the drive circuit are formed with first Semiconductor substrate
Electrical connection.
Optionally, the technique for removing sacrifice layer is ashing.
Present invention also offers a kind of mems device, including：First Semiconductor substrate；Led positioned at described the first half
The float electrode structure of body substrate surface, the float electrode structure includes the supporting construction positioned at the first semiconductor substrate surface
With the electrode structure in supporting construction；Positioned at the limiting structure of first semiconductor substrate surface；Positioned at described first
Second Semiconductor substrate of semiconductor substrate surface, second Semiconductor substrate is formed with confined air with the first Semiconductor substrate
Chamber, float electrode structure and limiting structure are located inside the closed cavity.
Optionally, the limiting structure is located at float electrode structure peripheral, and limiting structure is suitable to protection float electrode structure
In supporting construction.
Optionally, the number of the limiting structure is at least 2, and the limiting structure is at least along float electrode structure
Activity direction is distributed in float electrode structure both sides.
Optionally, the clearance distance between the limiting structure and float electrode structure is
Optionally, the material of the limiting structure is insulating material silicon oxide, silicon nitride, silicon oxynitride or oxidation of coal
Silicon.
Optionally, the float electrode structure includes the first float electrode structure and the second float electrode structure, and first lives
Moving electrode structure and the second float electrode structure are adjacent but do not contact with each other, the first float electrode structure and the second float electrode knot
The clearance distance of structure is
Optionally, the first float electrode structure include positioned at the first semiconductor substrate surface the first supporting construction and
First electrode structure in the first supporting construction, the second float electrode structure includes being located at the first Semiconductor substrate table
Second supporting construction in face and the second electrode structure in the second supporting construction.
Optionally, the material of first supporting construction and the second supporting construction is silicon, germanium or germanium silicon, first electricity
The material of pole structure and second electrode structure is silicon, germanium or germanium silicon.
Optionally, drive circuit, float electrode structure and the drive circuit are formed with first Semiconductor substrate
Electrical connection.
Compared with prior art, technical scheme has advantages below：
The present invention provides a kind of forming method embodiment of mems device, by formed float electrode structure it
Afterwards, some limiting structures are formed in its periphery distribution, limits the maximum activity distance of electrode structure in float electrode structure, keep away
The expendable damage of float electrode structure that supporting construction is broken due to overload and thus brought is exempted from, so as to reduce
The failure probability of mems device, extends the service life of device.
Further, the material of limiting structure is ensured for insulating materials and with the first Semiconductor substrate without electrically connecting with this
When the electrode structure displacement in float electrode structure is excessive touches limiting structure, the electric charge and electric capacity of float electrode structure
It is unaffected Deng electrical parameter, so as to not result in device transient failure.
Mems device provided in an embodiment of the present invention, comprising float electrode structure and be distributed in its periphery it is some
Limiting structure.The limiting structure limits the maximum activity distance of electrode structure in float electrode structure, it is to avoid support knot
The expendable damage of float electrode structure that structure is broken due to overload and thus brought.
Brief description of the drawings
Fig. 1 is the mems device structural representation of one embodiment of the invention；
Fig. 2 to Figure 11 is the mems device forming process schematic diagram of another embodiment of the present invention；
Figure 12 is the mems device structural representation of further embodiment of this invention；
Figure 13 is the mems device structural representation of yet another embodiment of the invention；
Figure 14 is the mems device structural representation of yet another embodiment of the invention.
Embodiment
From background technology, in the prior art, mems device is because size is small, application function is special, together
When limited by manufacturing process, mems device component especially mechanical movable part easily under extreme operating conditions be damaged
Failure and it can not recover function.
In order to further illustrate, the invention provides the embodiment of a mems device.
It refer to Fig. 1, the mems device of the present embodiment, including：
First Semiconductor substrate 11, first Semiconductor substrate 11 is suitable for mems device and provides carrying platform
And workbench；
Drive circuit 12 in the first Semiconductor substrate 11, the drive circuit 12 is suitable to driving and the driving electricity
The float electrode that road 12 is electrically connected；
The first float electrode structure 13 and the second float electrode structure 14 positioned at the surface of drive circuit 12, wherein, first
Float electrode structure 13 includes：The the first supporting construction 13b electrically connected with drive circuit 12, on the first supporting construction 13b
First electrode structure 13a；Second float electrode structure 14 includes：The the second supporting construction 14b electrically connected with drive circuit 12,
Second electrode structure 14a on the second supporting construction 14b；
The second of closed cavity 16 is constituted positioned at the surface of the first Semiconductor substrate 11 and with the first Semiconductor substrate 11
Semiconductor substrate 15, the first float electrode structure 13 and the second float electrode structure 14 are located in the closed cavity 16
Portion.
When 12 pairs of the drive circuit the first float electrode structure 13 and the second float electrode structure 14 apply necessarily
During voltage, second in first electrode structure 13a and the second float electrode structure 14 in the first float electrode structure 13
Electrode structure 14a is moved at a predetermined frequency along the x-axis direction, and the first float electrode structure 13 and the second float electrode knot
Structure 14 constitutes electric capacity, and the working condition of device is may determine that by the change of capacitance.
Research discovery is carried out to above-described embodiment, when device is under some non-normal conditions or extreme condition, the
The first supporting construction 13b and the second supporting construction 14b in one float electrode structure 13 and the second float electrode structure 14 have very
Expendable overload breakage occurs for big probability, so as to cause component failure and can not recover function.With the first float electrode knot
Structure 13 does exemplary illustrated, when proper device operation, and first electrode structure 13a can move horizontally generation one along the x-axis direction
Determine displacement, and the first supporting construction 13b is then fixedly connected on the surface of the first Semiconductor substrate 11 and is first electrode structure 13a
Restoring force is provided, drive is returned to initial position, and the displacement is more big, and the restoring force needed is also bigger.When first electrode knot
When structure 13a displacement reaches some critical value, the pole that the restoring force of generation will can be provided more than the first supporting construction 13b
Limit so that the first supporting construction 13b has very big probability to occur overload breakage, causes the first float electrode structure 13 to be lost completely
Effect.Therefore when device be in it is some in particular cases when, float electrode structure has very big probability failure and can not recover work(
Energy.
To solve the above problems, the invention provides a kind of forming method embodiment of MEMS, by being formed
After float electrode structure, some limiting structures are formed in its periphery distribution, electrode structure in float electrode structure is limited
Maximum activity distance, it is to avoid the float electrode structure that supporting construction is broken and thus brought due to overload is expendable
Damage, so as to reduce the failure probability of mems device, extends the service life of device.
It is understandable to enable the above-mentioned purpose of this method, feature and advantage to become apparent, below in conjunction with the accompanying drawings to this method
Embodiment be described in detail.When the embodiment of the present invention is described in detail, for purposes of illustration only, schematic diagram can disobey general ratio
Example makees partial enlargement, and the schematic diagram is example, and it should not be limited the scope of the invention herein.In addition, in reality
Border should include the three-dimensional space of length, width and depth in making.
With reference to Fig. 2, there is provided the first Semiconductor substrate 101.
Wherein, first Semiconductor substrate 101 is N-type substrate, P type substrate or SOI substrate, first semiconductor
Metal-oxide-semiconductor, passive device, active device etc. can also be formed with substrate 101.
It should be noted that drive circuit 102 is formed with first Semiconductor substrate 101, the drive circuit 102
Electric signal is provided for follow-up float electrode structure and receives the feedback signal of float electrode structure.
With reference to Fig. 3, the sacrifice layer 105 positioned at the surface of the first Semiconductor substrate 101 is formed.
The material of sacrifice layer 105 is amorphous carbon, and thickness isThe sacrifice layer is act as
It is removed in subsequent technique so as to exposure float electrode structure and limiting structure.
In the present embodiment, the sacrifice layer 105 is multilayer lamination structure.
Fig. 3 please be still referred to, the float electrode structure through the sacrifice layer 105, the float electrode structure bag is formed
Include the supporting construction and the electrode structure in supporting construction positioned at the surface of the first Semiconductor substrate 101.
The float electrode structure is electrically connected with the first Semiconductor substrate 101, in the present embodiment, float electrode structure with
Drive circuit 102 in first Semiconductor substrate 101 is electrically connected.
When the float electrode structure is applied in certain voltage by drive circuit 102, in the float electrode structure
Electrode structure move at a predetermined frequency along the x-axis direction, the supporting construction is suitable to the mobile support of electrode structure and carried
For restoring force.
In the present embodiment, the float electrode structure includes the first float electrode structure 103 and the second float electrode knot
Structure 104, the first float electrode structure 103 includes the first supporting construction 103b positioned at the surface of the first Semiconductor substrate 101
With the first electrode structure 103a on the first supporting construction 103b, the second float electrode structure 104 includes being located at the
The second supporting construction 104b and the second electrode structure on the second supporting construction 104b on the surface of semi-conductive substrate 101
104a。
The first float electrode structure 103 and the second float electrode structure 104 also constitute electric capacity, pass through the change of capacitance
Change the working condition that may determine that device.
The clearance distance of first float electrode structure 103 and the second float electrode structure 104 is d, and d scope is
In the present embodiment, the specific forming step of the sacrifice layer 105 and the float electrode structure refer to Fig. 4 extremely
Fig. 7.
Fig. 4 is refer to, the first sacrifice layer 105a is formed on the surface of the first Semiconductor substrate 101.
The material of the first sacrifice layer 105a is amorphous carbon, and thickness isFormation process is change
Vapour deposition or physical vapour deposition (PVD) are learned, the first sacrifice layer 105a's act as being removed in subsequent technique so that sudden and violent
Reveal float electrode structure and limiting structure.
Fig. 5 is refer to, the first supporting construction 103b and the second supporting construction are formed in the first sacrifice layer 105a
104b, and the first supporting construction 103b and the second supporting construction 104b electrically connect with drive circuit 102.
First supporting construction 103b and the second supporting construction 104b material are all silicon, germanium or germanium silicon, and formation process is
Physical vapour deposition (PVD) or chemical vapor deposition.
First supporting construction 103b and the second supporting construction 104b thickness are equal with the first sacrifice layer 105a thickness to beTheir effect is to provide support for the first electrode structure and second electrode structure being subsequently formed, and
And provide restoring force when first electrode structure and second electrode structure move for it.
The step of formation first supporting construction 103b and the second supporting construction 104b, includes：In first sacrifice layer
The first supporting construction groove and the second supporting construction groove, the full first supporting construction groove and second of filling are formed in 105a
Supporting construction groove simultaneously forms the first supporting construction 103b and the second supporting construction 104b.
The first supporting construction groove and the technique of the second supporting construction groove of being formed is dry etching, is used as a reality
Example is applied, the etching gas of the dry etching include CF4、CHF3、CH2F2、CH3F、SF6、NF3、Cl2、SO2、O2、N2, in Ar and He
One or more, the flow of etching gas marks every point of condition milliliter for 50 mark conditions milliliters every point~500, biases as 100V~600V,
Power is 100W~600W, and temperature is 30 DEG C~70 DEG C.
Fig. 6 is refer to, covering the first supporting construction 103b and second is formed on the first sacrifice layer 105a surfaces
Supporting construction 104b the second sacrifice layer 105b.
The material of the second sacrifice layer 105b is amorphous carbon, and thickness isFormation process is change
Vapour deposition, physical vapour deposition (PVD) or ald are learned, the effect of the second sacrifice layer 105b is also for follow-up
It is removed in technique so as to exposure float electrode structure and limiting structure.
Fig. 7 is refer to, first electrode structure 103a and second electrode structure are formed in the second sacrifice layer 105b
104a。
First electrode structure 103a and second electrode structure 104a is flushed with the second sacrifice layer 105b top surfaces.
First electrode structure 103a and second electrode structure 104a material are all silicon, germanium or germanium silicon, and formation process is
Physical vapour deposition (PVD), chemical vapor deposition or ald.First electrode structure 103a's and second electrode structure 104a
Thickness is equal with the second sacrifice layer 105b thickness to be
The step of formation first electrode structure 103a and second electrode structure 104a, includes：In second sacrifice layer
First electrode structured channel and second electrode structured channel, the full first electrode structured channel and second of filling are formed in 105b
Electrode structure groove simultaneously forms first electrode structure 103a and second electrode structure 104a.
First electrode structure 103a and second electrode structure 104a sectional width are respectively greater than the first supporting construction 103b
With the second supporting construction 104b sectional width.Meanwhile, first electrode structure 103a and second electrode structure 104a along parallel to
The area of the surface direction of first Semiconductor substrate 101 is respectively greater than the first supporting construction 103b and the second supporting construction 104b along flat
Row is in the area of the surface direction of the first Semiconductor substrate 101.
The first electrode structured channel and the technique of second electrode structured channel of being formed is dry etching, is used as a reality
Example is applied, the etching gas of the dry etching include CF4、CHF3、CH2F2、CH3F、SF6、NF3、Cl2、SO2、O2、N2, in Ar and He
One or more, the flow of etching gas marks every point of condition milliliter for 50 mark conditions milliliters every point~500, biases as 100V~600V,
Power is 100W~600W, and temperature is 30 DEG C~70 DEG C.
With reference to Fig. 8, formed and be located in sacrifice layer 105 and positioned at the limiting structure 106 on the surface of the first Semiconductor substrate 101.
The number of the limiting structure is at least 2, and is at least distributed in activity along the activity direction of float electrode structure
Electrode structure both sides.With reference to Fig. 8, in the present embodiment, first is distributed in the number 2 of limiting structure 106 and along the x-axis direction
Do exemplary illustrated exemplified by the float electrode structure peripheral of the float electrode structure 104 of float electrode structure 103 and second composition.
The material of the limiting structure 106 is insulating material silicon oxide, silicon nitride, silicon oxynitride or silicon oxide carbide, shape
It is physical vapour deposition (PVD), chemical vapor deposition or ald into technique.
The top dimension of the section shape of limiting structure 106 can be more than, less than or equal to bottom size.It is used as a reality
Example is applied, the trapezoidal or top dimension that the section shape of limiting structure 106 can be more than bottom size for rectangle, top dimension is small
In the trapezoidal etc. of bottom size.
The clearance distance of the float electrode structure 103 of limiting structure 106 and first and the second float electrode structure 104 is s, s
Scope be
The limiting structure 106 act as limitation the first float electrode structure 103 and edge of the second float electrode structure 104
The maximum activity distance in x-axis direction, protection the first supporting construction 103b and the second supporting construction 104b is not broken；Limiting structure
106 material be insulating materials, subsequently remove sacrifice layer 105 after, the float electrode structure 103 of limiting structure 106 and first or
When the second float electrode of person structure 104 is contacted, the first float electrode structure 103 or the second float electrode structure are not interfered with
The parameters such as 104 electric charge and electric capacity.
The step of forming limiting structure 106 includes：The first Semiconductor substrate 101 of exposure is formed in sacrifice layer 105
The limiting structure groove of part surface；The full limiting structure groove of filling simultaneously forms limiting structure 106.
The technique for forming limiting structure groove is dry etching, is used as one embodiment, the quarter of the dry etching
Lose gas and include CF4、CHF3、CH2F2、CH3F、SF6、NF3、Cl2、SO2、O2、N2, it is one or more of in Ar and He, etching gas
Flow is that 50 mark conditions milliliters every point~500 mark every point of condition milliliter, is biased as 100V~600V, power is 100W~600W, temperature
For 30 DEG C~70 DEG C.
With reference to Fig. 9, the sacrifice layer is removed, float electrode structure, limiting structure 106 and the semiconductor of part first is exposed
The surface of substrate 101.
The technique for removing sacrifice layer is ashing, using N2And H2Mixed gas, the flow of mixed gas is 500 marks
Condition milliliter every point~3000 marks every point of condition milliliter, and power is 1000W~5000W, and temperature is 50 DEG C~400 DEG C.
The technique of the ashing all has higher to float electrode structure, the Semiconductor substrate 101 of limiting structure 106 and first
Selection ratio, the selection compares more than 20, therefore the cineration technics will not be to float electrode knot while sacrifice layer is removed
Structure, the Semiconductor substrate 101 of limiting structure 106 and first cause damage.
On limiting structure 106 the first supporting construction 103b and the second supporting construction 104b can be protected not to be broken this to ask
Topic, next does exemplary illustrated in the first float electrode structure 103.When device works, the first float electrode structure 103
In first electrode structure 103a along the x-axis direction horizontal displacement produce certain displacement amount, and the first supporting construction 103b fix connect
It is connected on the surface of the first Semiconductor substrate 101 and provides restoring force drive for first electrode structure 103a and is returned to initial position, institute
State the more big then required restoring force of displacement also bigger.In some non-normal working situations or extreme condition, first electrode
Structure 103a horizontal displacement can be dramatically increased, if first electrode structure 103a horizontal displacement has reached that some is critical
Value, the limit that restoring force will can be provided more than the first supporting construction 103b so that the first supporting construction 103b has very big several
Overload breakage occurs for rate.In the present embodiment, limiting structure 106 limits the maximum activity model of the first float electrode structure 103
Enclose, that is, limit first electrode structure 103a horizontal displacement, when first electrode structure 103a horizontal displacement will surpass
When crossing critical value, limiting structure 106 will stop its displacement, and pressure stops it, so as to protect the first supporting construction 103b not
Meeting overload breakage, therefore the failure probability of device is greatly reduced, improve the service life of device.
In addition, limiting structure 106 employs insulating material silicon oxide, silicon nitride, silicon oxynitride or silicon oxide carbide, with this
Ensure when float electrode displacement structure amount is excessive touch limiting structure when, the electricity such as electric charge and electric capacity of float electrode structure ginseng
Number is unaffected, so as to not result in device transient failure.
With reference to Figure 10 and Figure 11, Figure 11 is the top view of the MEMS, and Figure 10 is Figure 11 along line of cut AA ' directions
Cross-sectional view there is provided the second Semiconductor substrate 107, second Semiconductor substrate 107 is connected to the first semiconductor
The surface of substrate 101 simultaneously forms closed cavity 108, and float electrode structure and limiting structure 106 are located in the closed cavity 108
Portion.
The closed cavity 108 is vacuum environment.
The step of forming closed cavity 108 includes：In the lower surface formation groove of the second Semiconductor substrate 107；In vacuum
The second Semiconductor substrate 107 and the first Semiconductor substrate 101 are connected under environment.
It is dry etching in the technique of the lower surface of the second Semiconductor substrate 107 formation groove, it is described as one embodiment
The etching gas of dry etching include CF4、CHF3、SF6、NF3、Cl2、HBr、O2、N2, it is one or more of in Ar and He, etch gas
The flow of body is that 50 mark conditions milliliters every point~500 mark every point of condition milliliter, is biased as 300V~700V, power is 300W~400W,
Temperature is 30 DEG C~70 DEG C.
Based on the forming method shown in Fig. 2 to Figure 11, the embodiment of the present invention additionally provides a kind of mems device, ginseng
Figure 10 and Figure 11 are examined, including：
First Semiconductor substrate 101, first Semiconductor substrate 101 is covered in top view 11 by the second semiconductor 107
Lid and it is invisible；
Float electrode structure positioned at the surface of the first Semiconductor substrate 101, the float electrode structure includes being located at
The supporting construction and the electrode structure in supporting construction on the surface of the first Semiconductor substrate 101；
In the present embodiment, the float electrode structure includes the first float electrode structure 103 and the second float electrode knot
Structure 104, the first float electrode structure 103 includes the first supporting construction 103b positioned at the surface of the first Semiconductor substrate 101
With the first electrode structure 103a on the first supporting construction 103b, the second float electrode structure 104 includes being located at the
The second supporting construction 104b and the second electrode structure on the second supporting construction 104b on the surface of semi-conductive substrate 101
104a.The first float electrode structure 103 and the second float electrode structure 104 are in top view 11 by the second Semiconductor substrate
107 coverings and it is invisible, therefore be represented by dotted lines in fig. 11.
Limiting structure 106 positioned at the surface of the first Semiconductor substrate 101, the quilt in top view 11 of limiting structure 106
Second Semiconductor substrate 107 is covered and invisible, therefore is represented by dotted lines in fig. 11；
The second Semiconductor substrate 107 positioned at the surface of the first Semiconductor substrate 101, second Semiconductor substrate
107 and first Semiconductor substrate 101 be formed with closed cavity 108, float electrode structure and limiting structure 106 are located at described closed
In cavity, the closed cavity 108 is covered and invisible in top view 11 by the second Semiconductor substrate 107, therefore in Figure 11
In be represented by dotted lines.
It should be noted that drive circuit 102 is formed with first Semiconductor substrate 101, the drive circuit 102
Electrically connected with the first float electrode structure 103 and the second float electrode structure 104, be the first float electrode structure 103 and second
Float electrode structure 104 provides electric signal and receives feedback electric signal.The drive circuit is not shown in top view 11.
The clearance distance of first float electrode structure 103 and the second float electrode structure 104 is d, with reference to Figure 11, d model
Enclose for
The clearance distance of the float electrode structure 103 of limiting structure 106 and first and the second float electrode structure 104 is s, ginseng
Figure 11 is examined, s scope is
First supporting construction 103b and the second supporting construction 104b material are identical, are silicon, germanium or germanium silicon, the first support
Structure 103b and the second supporting construction 104b thickness is
First electrode structure 103a is identical with second electrode structure 104a material, is silicon, germanium or germanium silicon, first electrode
Structure 103a and second electrode structure 104a thickness is
The activity direction of first float electrode structure 103 and the second float electrode structure 104 is served as a contrast parallel to the first semiconductor
The surface of bottom 101, along the x-axis direction.
First electrode structure 103a and second electrode structure 104a sectional width are respectively greater than the first supporting construction 103b
With the second supporting construction 104b sectional width.Meanwhile, first electrode structure 103a and second electrode structure 104a along parallel to
The area of the surface direction of first Semiconductor substrate 101 is respectively greater than the first supporting construction 103b and the second supporting construction 104b along flat
Row is in the area of the surface direction of the first Semiconductor substrate 101.
The material of limiting structure 106 is insulating material silicon oxide, silicon nitride, silicon oxynitride or silicon oxide carbide, limiting structure
The top dimension of 106 section shapes can be more than, less than or equal to bottom size.It is used as one embodiment, limiting structure 106
Section shape can for rectangle, top dimension be more than bottom size trapezoidal or top dimension be less than bottom size it is trapezoidal
Deng.
Closed cavity 108 is vacuum environment.
The limiting structure 106 act as limitation the first float electrode structure 103 and edge of the second float electrode structure 104
The maximum activity distance in x-axis direction, protection the first supporting construction 103b and the second supporting construction 104b is not broken；Limiting structure
106 material is insulating materials, will not when being contacted with the first float electrode structure 103 or the second float electrode structure 104
Influence the parameters such as the electric charge and electric capacity of the first float electrode structure 103 or the second float electrode structure 104.
The limiting structure is distributed in float electrode structure peripheral, and the number of limiting structure is 2, is distributed along the x-axis direction
The float electrode structure both sides constituted in the first float electrode structure 103 and the second float electrode structure 104, x-axis direction is the
The activity direction of one float electrode structure 103 and the second float electrode structure 104.2 limiting structures 106 are in top view 11
In on line of cut AA ' axial symmetry.
The embodiment of the present invention additionally provides another mems device, with reference to Figure 12.The micro-electro-mechanical systems of the present embodiment
System device architecture and Figure 11 embodiment are essentially identical, and different places is the distributing position of limiting structure 106.In the present embodiment
In, the number of limiting structure 106 is 2, and the first float electrode structure 103 and the second float electrode knot are distributed in along the x-axis direction
The float electrode structure both sides that structure 104 is constituted, x-axis direction is the first float electrode structure 103 and the second float electrode structure 104
Activity direction.2 limiting structures 106 are asymmetric on line of cut BB ' in top view 12.
The effect of limiting structure 106 is to limit the first float electrode structure 103 and the second float electrode structure 104 along x-axis
The maximum activity distance in direction, the location mode of the present embodiment can equally play restriction effect, it is not limited on cutting
The axisymmetric situations of line BB '.
The embodiment of the present invention additionally provides another mems device, with reference to Figure 13.The micro-electro-mechanical systems of the present embodiment
System device architecture and Figure 11 embodiment are essentially identical, and different places is the number and distributing position of limiting structure 106.
In the present embodiment, the number of limiting structure 106 is 3, is distributed along the x-axis direction, wherein 2 are distributed in float electrode structure the
The one side periphery of one float electrode structure 103, remaining 1 is distributed in the second float electrode structure 104 1 in float electrode structure
Side periphery, x-axis direction is the activity direction of the first float electrode structure 103 and the second float electrode structure 104.
The effect of limiting structure 106 is to limit the first float electrode structure 103 and the second float electrode structure 104 along x-axis
The maximum activity distance in direction, the method for the present embodiment can equally play restriction effect, it is not limited to float electrode structure
Both sides are distributed the situation of equal numbers of limiting structure 106.
The embodiment of the present invention additionally provides another mems device, the mems device structure of the present embodiment
Embodiment with Figure 11 is essentially identical, and different places is the number and distributing position of limiting structure 106.In the present embodiment
In, the number of limiting structure is m, is distributed along the x-axis direction, wherein n (n<M) it is distributed in the first activity in float electrode structure
The one side periphery of electrode structure 103, remaining m-n are distributed in float electrode structure outside the side of the second float electrode structure 104
Enclose, x-axis direction is the activity direction of the first float electrode structure 103 and the second float electrode structure 104, and the m and n are big
In 2 natural numbers, the present embodiment does not make schematic diagram.
The embodiment of the present invention additionally provides another mems device, with reference to Figure 14, the micro-electro-mechanical systems of the present embodiment
System device architecture and Figure 11 embodiment are essentially identical, and different places is the number and distributing position of limiting structure 106.
In the present embodiment, the number of limiting structure 106 is 4, wherein 2 are distributed in float electrode structure both sides along the x-axis direction, remaining
2 are distributed in float electrode structure both sides along the y-axis direction.Direction of motion when x-axis direction is float electrode structure normal work,
Direction of motion when y-axis direction is float electrode structure non-normal working.
In the present embodiment, the limiting structure 106 is simultaneously along x-axis and y-axis directional spreding, the limit being distributed along the y-axis direction
Structure processed plays auxiliary restriction effect, although the activity direction of float electrode structure is along x-axis side when working under normal operation
To, but under some non-normal conditions or extreme condition, the activity direction of float electrode structure is likely to occur change and arrives y
Direction and maximum activity distance exceed critical value, also result in component failure.
The embodiment of the present invention additionally provides another mems device, the mems device structure of the present embodiment
Embodiment with Figure 11 is essentially identical, and different places is the number and distributing position of limiting structure 106.In the present embodiment
In, the number of limiting structure is the natural number more than 4, along the x-axis direction with y-axis directional spreding in float electrode structure peripheral, its
In 1 limiting structure is at least distributed with each direction, on the outside of float electrode structure.X-axis direction is float electrode structure
Direction of motion during normal work, direction of motion when y-axis direction is float electrode structure non-normal working, the present embodiment is not made
Go out schematic diagram.
To sum up, the forming method of MEMS provided in an embodiment of the present invention, by formed float electrode structure it
Afterwards, some limiting structures are formed in its periphery distribution, limits the maximum activity distance of electrode structure in float electrode structure, keep away
The expendable damage of float electrode structure that supporting construction is broken due to overload and thus brought is exempted from, so as to reduce
The failure probability of mems device, extends the service life of device.
MEMS provided in an embodiment of the present invention, comprising float electrode structure and is distributed in some of its outer peripheral areas
Limiting structure.The limiting structure limits the maximum activity distance of electrode structure in float electrode structure, it is to avoid support knot
The expendable damage of float electrode structure that structure is broken due to overload and thus brought.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, are not departing from this
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (11)
1. a kind of forming method of mems device, it is characterised in that including：
First Semiconductor substrate is provided；
Form the sacrifice layer positioned at the first semiconductor substrate surface；
The float electrode structure through the sacrifice layer is formed, the float electrode structure includes being located at the first Semiconductor substrate table
The supporting construction in face and the electrode structure in supporting construction；
Formed and be located in sacrifice layer and positioned at the limiting structure of the first semiconductor substrate surface；
The sacrifice layer is removed, float electrode structure, limiting structure and the semiconductor substrate surface of part first is exposed；
The second Semiconductor substrate is provided, second Semiconductor substrate is connected to the first semiconductor substrate surface and forms confined air
Chamber, float electrode structure and limiting structure are located inside the closed cavity.
2. the forming method of mems device as claimed in claim 1, it is characterised in that the limiting structure, which is located at, lives
Moving electrode structure peripheral, limiting structure is suitable to the supporting construction in protection float electrode structure.
3. the forming method of mems device as claimed in claim 2, it is characterised in that the number of the limiting structure
At least 2, and the limiting structure is at least distributed in float electrode structure both sides along the activity direction of float electrode structure.
4. the forming method of mems device as claimed in claim 2, it is characterised in that the limiting structure and activity
Clearance distance between electrode structure is
5. the forming method of mems device as claimed in claim 2, it is characterised in that the material of the limiting structure
For insulating material silicon oxide, silicon nitride, silicon oxynitride or silicon oxide carbide.
6. the forming method of mems device as claimed in claim 1, it is characterised in that the float electrode structure bag
Include the first float electrode structure and the second float electrode structure, the first float electrode structure and the second float electrode structure it is adjacent but
Do not contact with each other, the clearance distance of the first float electrode structure and the second float electrode structure is
7. the forming method of mems device as claimed in claim 6, it is characterised in that the first float electrode knot
Structure includes the first supporting construction and the first electrode structure in the first supporting construction positioned at the first semiconductor substrate surface,
The second float electrode structure is included positioned at the second supporting construction of the first semiconductor substrate surface and positioned at the second support knot
Second electrode structure on structure.
8. the forming method of mems device as claimed in claim 6, it is characterised in that first supporting construction and
The material of second supporting construction is silicon, germanium or germanium silicon, and the material of the first electrode structure and second electrode structure is silicon, germanium
Or germanium silicon.
9. the forming method of mems device as claimed in claim 6, it is characterised in that the first float electrode knot
The activity direction of the second electrode structure of the first electrode structure of structure and the second float electrode structure is served as a contrast parallel to the first semiconductor
Basal surface.
10. the forming method of mems device as claimed in claim 1, it is characterised in that the first semiconductor lining
Drive circuit is formed with bottom, float electrode structure is electrically connected with the drive circuit.
11. the forming method of mems device as claimed in claim 1, it is characterised in that the removal sacrifice layer
Technique is ashing.
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