CN105374667B - Method for permanent engagement chip - Google Patents
Method for permanent engagement chip Download PDFInfo
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- CN105374667B CN105374667B CN201510911760.2A CN201510911760A CN105374667B CN 105374667 B CN105374667 B CN 105374667B CN 201510911760 A CN201510911760 A CN 201510911760A CN 105374667 B CN105374667 B CN 105374667B
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- Prior art keywords
- contact surface
- hopper
- starting material
- engagement
- substrate
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000007858 starting material Substances 0.000 claims abstract description 41
- 238000006243 chemical reaction Methods 0.000 claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 230000002427 irreversible effect Effects 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000007795 chemical reaction product Substances 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 230000003014 reinforcing effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 43
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
- 229910001868 water Inorganic materials 0.000 description 19
- 239000007789 gas Substances 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 9
- 239000011148 porous material Substances 0.000 description 8
- 238000003851 corona treatment Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910002808 Si–O–Si Inorganic materials 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000007836 KH2PO4 Substances 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- SZVJSHCCFOBDDC-UHFFFAOYSA-N ferrosoferric oxide Chemical compound O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- -1 hydroxyl compound Chemical class 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 229910000402 monopotassium phosphate Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- GNSKLFRGEWLPPA-UHFFFAOYSA-M potassium dihydrogen phosphate Chemical compound [K+].OP(O)([O-])=O GNSKLFRGEWLPPA-UHFFFAOYSA-M 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 241001270131 Agaricus moelleri Species 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910018069 Cu3N Inorganic materials 0.000 description 1
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- 208000013668 Facial cleft Diseases 0.000 description 1
- 229910017356 Fe2C Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910005987 Ge3N4 Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- 229910020056 Mg3N2 Inorganic materials 0.000 description 1
- 229910019762 Nb4C3 Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 229910018162 SeO2 Inorganic materials 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910008062 Si-SiO2 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004286 SiNxOy Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 229910006403 Si—SiO2 Inorganic materials 0.000 description 1
- 229910004472 Ta4C3 Inorganic materials 0.000 description 1
- 229910003069 TeO2 Inorganic materials 0.000 description 1
- 229910004273 TeO3 Inorganic materials 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910001567 cementite Inorganic materials 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(II,III) oxide Inorganic materials [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- HRKQOINLCJTGBK-UHFFFAOYSA-N dihydroxidosulfur Chemical compound OSO HRKQOINLCJTGBK-UHFFFAOYSA-N 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910000471 manganese heptoxide Inorganic materials 0.000 description 1
- AMWRITDGCCNYAT-UHFFFAOYSA-L manganese oxide Inorganic materials [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 1
- GEYXPJBPASPPLI-UHFFFAOYSA-N manganese(III) oxide Inorganic materials O=[Mn]O[Mn]=O GEYXPJBPASPPLI-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 235000019796 monopotassium phosphate Nutrition 0.000 description 1
- GNMQOUGYKPVJRR-UHFFFAOYSA-N nickel(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Ni+3].[Ni+3] GNMQOUGYKPVJRR-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- PZFKDUMHDHEBLD-UHFFFAOYSA-N oxo(oxonickeliooxy)nickel Chemical compound O=[Ni]O[Ni]=O PZFKDUMHDHEBLD-UHFFFAOYSA-N 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000005373 siloxane group Chemical group [SiH2](O*)* 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910003470 tongbaite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000010148 water-pollination Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910006592 α-Sn Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention relates to the methods for permanent engagement chip.Specifically, a kind of method that the present invention discloses the second contact surface (4) that the first contact surface (3) of first substrate (1) is bonded to the second substrate (2), the method includes the steps of, especially include following sequence :-hopper (5) are formed in the superficial layer (6) of the first contact surface (3), the hopper (5) is at least partly filled using the first starting material or first group of starting material, the first contact surface (3) is contacted with the second contact surface (4) to form pre- engagement connection, in first and second contact surface (3, 4) permanent engagement is formed between, at least partly strengthen the permanent engagement by reacting the second starting material contained in the first starting material and the conversion zone (7) of the second substrate.
Description
The application is the divisional application of the patent application application No. is 201180065964.9.
Technical field
The present invention relates to a kind of as described in claim 1 for the first contact surface of first substrate to be bonded to second
The method of second contact surface of substrate.
Background technique
The purpose of the permanent or irreversible engagement of substrate is, generates between two contact surfaces of substrate as strong as possible
And especially irreversible connection, i.e., strong engaging force.There is various measures and manufacturing method in the prior art thus.
Well known manufacturing method and the measure used till today frequently result in cannot reproduce or reproducibility difference and it is special
It is the result that can hardly be applied to the condition of change.Manufacturing method especially used at present usually uses high temperature, especially >
400 DEG C of high temperature, to guarantee repeatable result.
01/61743 A of WO describes a kind of low temperature joint method.In 2003/0089950 A1, Us 2002/ of US
0048900 200,8/0,006,369 5 451 547 0 584 778 5 427 638 and of A2, US of A, EP of A1, US of A1, US
Other joint methods are described in 5 166690 A of JP.
If high energy consumption and the technical issues of may damaging existing structure on substrate are by so far for high bonding force institute
It is much higher than caused by 300 DEG C to the high-temperature part needed.
Others require to be:
Front end of line compatibility.
It is defined as the technical process compatibility during manufacturing electrically active component.Therefore it must design and engage in this way
Journey: so that the live components being already present on structured wafer such as transistor neither affect adversely during the process nor
It is damaged.Compatibility standard mainly include the purity (mainly in CMOS structure) of certain chemical elements, machinery can load,
It can load especially by machinery caused by thermal stress.
Low pollution
Not applied force.
Engaging force, which reduces, leads to more handling with caution and thus causing to break due to caused by direct mechanical load for structured wafer
Bad probability reduces.
Summary of the invention
It is a kind of for carefully producing permanently connecing with high bonding force as far as possible therefore, the purpose of the present invention is to design
The method of conjunction.
This purpose is to utilize the feature of claim 1 and obtain.Advantageous hair of the invention is given in dependent claims
Exhibition.Whole combinations of at least two features provided in specification, claims and/or attached drawing also fall into frame of the invention
It is interior.In given numberical range, the numerical value in prescribed limit also will be disclosed and can be required with any combination as boundary value
Protection.
The basic idea of the invention is that a kind of be arranged at least one of substrate is used to receive the first starting material (Edukt)
Hopper, first starting material contact between the substrate or generated between the substrate after interim engagement be present in
The second starting material in another substrate reacts and thus forms irreversible or permanent engagement between the substrate.It is this
It is formed before or after hopper in a superficial layer in first contact surface, usually especially by rinsing step to the base
Plate or two substrates are cleaned.This cleaning should usually can ensure that there is no will lead to the micro- of non-junction on the surface
Grain.A kind of engineering feasibility is formed by the starting material contained in the hopper and the hopper to generate interim or reversible connect
Induce the reaction strengthened the permanent engagement and increase engaging speed after closing in a controlled manner directly in the contact surface, especially
It is to deform at least one of described contact surface by the reaction, preferably the contact surface opposite with the hopper.
For for generating the interim or pre- engagement step of reversible engagement between the substrates, for connecing in the substrate
It touches and generates weak interaction between surface and there are various possibilities.Pre- bond strength is lower than permanent engagement intensity at least 2 to 3
Times, especially 5 times, more preferably 15 times, more preferable 25 times.There to be substantially 100 mJ/m2The hydrophilic pure silicon of disactivation and have
Substantially 200 to 300 mJ/m2Plasma-activated hydrophilic pure silicon pre- bond strength as standard.Molecule soaks substrate
Between pre- engagement be mainly due between the molecule of different chips side Van der Waals force interaction.Therefore there is permanent dipole
The molecule of square is adapted to carry out the pre- engagement between chip.Property for example and not limitation using following compound as interconnection agent
(Verbindungsmittel)
Water
Thio-alcohol
- AP3000
Silanes and/or
Silanol.
Suitable substrate according to the present invention be its material can be reacted as starting material and with the starting material of another supply with
It forms the product with higher molal volume and thus forms those of grown layers substrate on the substrate.Combining below especially has
Benefit, wherein the arrow left side is starting material, is then the product on the right of arrow, without indicating the confession reacted with starting material in detail
The starting material or by-product answered:
- Si→SiO2、Si3N4、SiNxOy
- Ge→GeO2、Ge3N4
- α-Sn→SnO2
- B→B2O3、BN
- Se→SeO2
- Te→TeO2、TeO3
- Mg→MgO、Mg3N2
- Al→Al2O3、AlN
- Ti→TiO2、TiN
- V→V2O5
- Mn→MnO、MnO2、Mn2O3、Mn2O7、Mn3O4
- Fe→FeO、Fe2O3、Fe3O4
- Co→CoO、Co3O4
- Ni→NiO、Ni2O3
- Cu→CuO、Cu2O、Cu3N
- Zn→ZnO
- Cr→CrN、Cr23C6、Cr3C、Cr7C3、Cr3C2
- Mo→Mo3C2
- Ti→TiC
- Nb→Nb4C3
- Ta→Ta4C3
- Zr→ZrC
- Hf→HfC
- V→V4C3、VC
- W→W2C、WC
- Fe→Fe3C、Fe7C3、Fe2C。
It is also contemplated that using the semiconductor of following mixed form as substrate:
- III-V:GaP, GaAs, InP, InSb, InAs, GaSb, GaN, AlN, InN, AlxGaI-xAs、InxGaI-xN
- IV-IV:SiC, SiGe
- III-IV:InAlP
Device for non-linear optical: LiNbO3、LiTaO3、KDP (KH2PO4)
Solar battery: CdS, CdSe, CdTe, CuInSe2、CuInGaSe2、CuInS2、CuInGaS2
Conductive oxide: In2-xSnxO3-y。
According to the present invention, directly there are a reservoirs in respective contact surface at least one of chip and more precisely
The starting material of slot, a certain amount of at least one supply for volume expansion reaction can be stored in wherein.Therefore, starting material can be
(for example) O2、O3、H2O、N2、NH3、H2O2Etc..It due to expansion, is especially expanded as caused by oxide growth, based on reaction ginseng
The trend for reducing system capacity with object minimizes possible gap between contact surface, hole and cavity and by making these areas
The distance between substrate in domain narrows and correspondingly increases engaging force.In the far more likely case, existing gap, hole and cavity
It is closed completely so that entire engagement surface increases and correspondingly increases engaging force thus according to the present invention.
Contact surface usually shows the secondary roughness (R with 0.2nmq) roughness.This corresponds within the scope of 1nm
Surface peak to peak (peak-to-peak) value.These empirical values are measured using atomic force microscope (AFM).
Reaction is suitable for the routine wafer of the Circular wafer for the diameter with 200 to 300mm as described in the present invention
Surface allows grown layers growth 0.1 to 0.3nm using the water of 1 monolayer (ML).
Therefore, according to the present invention, specifically provide at least 2 ML, preferably at least 5 ML, even more desirably at least 10 ML
Fluid, especially water is stored in hopper.
It is especially preferred by being exposed to formation hopper in plasma, this is because in addition plasma exposure is drawn
Play that contact surface is smooth and hydrophiling as synergistic effect.Make the smooth surface mainly by this by plasma-activated
The viscous flow of the material of superficial layer is implemented.Hydrophilic enhancing is in particular according to following reaction particularly by the increasing of silicone hydroxyl compound
Add, the Si-O compound such as Si-O-Si being preferably present on the surface by cracking occurs:
Si-O-Si+H2O↔2SiOH。
Another side effect (especially because above-mentioned effect) is that pre- bond strength especially enhances 2 to 3 times.
The hopper in superficial layer in first contact surface of the first substrate has for example been applied by plasma-activated
It is covered with the first substrate of thermal oxide and is formed.The gas ions activation carries out so as to adjust the ion in a vacuum chamber
Condition needed for body.According to the present invention, use ion energy in the range of 0 to 2000 eV plasma release
N2Gas, O2Thus gas or argon gas generate hopper, the depth on the surface (in this case, first contact surface) of the wherein processing
Degree is up to 20nm, preferably up to 15nm, more preferably up to 10nm, most preferably up to 5nm.According to the present invention, it can be used and be suitble to
Generate each particle type (atom and/or molecule) of the hopper.Preferably, there is the hopper of required property using generation
Those of atom and/or molecule.Relevant nature is mainly pore size, pore size distribution and hole density.Alternatively, according to the present invention, can make
With admixture of gas, all such as (e.g.) air or by 95% Ar and 5% H2The formation gas of composition.According to used gas,
Following ion: N+, N is particularly present in the hopper during corona treatment2+、O+、O2+,Ar+.First starting material
It can be contained in the free space not occupied.
The hopper is based on considered below and is formed: pore size is less than 10nm, preferably smaller than 5nm, more preferably less than
1nm, even more preferably less than 0.5nm, more preferably less than 0.2nm.
Hole density is more preferably directly directly proportional to the density for the particle for generating hole by effect of impact, most preferably even can be with
The partial pressure of rammer and change, and the processing time of plasma system used in particularly depending on and parameter.
Preferably, by changing the parameter in these several regions being overlapped in preferred flat-top shape region (see Fig. 7),
Pore size distribution has at least one maximum hole concentrated area in the lower face.The pore size distribution increases with thickness and reduces and tend to
Zero.During shock, the region near the surface has the hole density no better than the hole density near the surface.In plasma
After processing terminate, the hole density on the surface can reduce body due to stress relaxation mechanism.The pore size distribution phase of through-thickness
There is side that is relatively flat but continuing to decline with steep sides and relative to whole for the surface (see Fig. 7).
For pore size, pore size distribution and hole density, similar consideration is suitable for the whole side that non-used plasma generates
Method.
The hopper can design and pointedly using with combined process parameter.Fig. 7 is shown to be infused by plasma
Entering the concentration of nitrogen-atoms and penetrating into the depth of silicon oxide layer is in the diagram of functional relation.It can produce two by changing physical parameter
A curve.First curve 11 is generated and the atom of higher acceleration is deeper into silica, on the contrary, curve 12 is more
Change technological parameter to generate compared with low-density.The superposition of two curves generates the master curve 13 that the characteristic of hopper is presented.Injection
Relationship between the concentration of atom and/or molecule class is apparent.Higher concentration instruction has the region of higher defect sturcture, by
There are the more spaces for accommodating subsequent starting material in this.In the technological parameter that plasma-activated period is controlled in a manner of specific aim
Lasting change make it obtain introduce ion in depth with distribution as uniform as possible hopper.
As hopper, substitute the hopper generated by plasma, it is contemplated that in a substrate at least one (at least the
One substrate) on use TEOS (tetraethyl orthosilicate) oxide skin(coating).The usual density of this oxide is less than thermal oxide, thus basis
Present invention compression is advantageous.Compression is occurred by heat treatment to set the porosity of the determination of the hopper.
An embodiment according to the present invention, is filled out by the way that the hopper to be applied on the first substrate with coating form
It fills the hopper and occurs simultaneously especially advantageous with the hopper is formed, wherein the coating has included first starting material.
It is contemplated that hopper be with porosity be in porous layer in nanometer range or as with channel density
Less than containing for 10nm, more preferably less than 5nm, even more preferably less than 2nm, more preferably less than 1nm, more preferably less than 0.5nm
The layer in channel.
For the step of filling the hopper using the first starting material or the first starting material group, according to the present invention, it is contemplated that
Following embodiments and their combination:
The hopper is exposed in ambiance,
Especially rinsed with deionized water,
With containing starting material or the fluid flushing being made of starting material, especially H2O、H2O2、NH4OH,
The hopper is exposed in any gas atmosphere, especially atomic gas, molecular gas, admixture of gas,
The hopper is exposed in the atmosphere containing vapor or hydrogen peroxide vapor, and
Deposition has been filled with superficial layer of the hopper as the first substrate of starting material.
Following compound can be starting material: O2、O3、N2、NH3、H2O、H2O2And/or NH4OH。
The more preferably scheme in addition to using water is regarded as using hydrogen peroxide vapor listed above.Hydrogen peroxide into
One step, which is gathered around, has the advantage that its oxygen is higher to the ratio of hydrogen.In addition, hydrogen peroxide is in the case where being higher than specific temperature and/or via using
High frequency field in MHz range can be dissociated into hydrogen and oxygen.
A Favourable implementations according to the present invention, the reinforcing of formation and the irreversible engagement of grown layers pass through by this
One starting material diffuses in the conversion zone and occurs.
Another Favourable implementations according to the present invention, irreversible engagement be formed in usually less than 300 DEG C, it is advantageously small
In 200 DEG C, more preferably less than 150 DEG C, even more preferably less than 100 DEG C, most preferably room temperature at a temperature of especially most 12
It, occur during more preferably up to 1 day, even more preferably at most 1 hour, most preferably up to 15 minutes.
Herein, if the irreversible engagement, which has, is greater than 1.5 J/m2, especially greater than 2 J/m2, more preferably greater than 2.5 J/m2
Bond strength, then its is especially advantageous.
Bond strength can especially advantageously enhance, this is by during reaction, according to the present invention in the conversion zone
The molal volume that being formed has is greater than the product of the molal volume of the second starting material.Realize by this method in the second substrate at
It is long, it is possible thereby to be closed the gap between the contact surface by chemical reaction according to the present invention.It is connect described in reducing as a result,
The distance between touching surface is average distance and invalidates space-minimized.
As long as the formation of hopper is occurred by plasma-activated, especially between 10 and 600 kHz
Activate frequency and/or between 0.075 and 0.2 watt/cm2Between power density and/or using between 0.1 and 0.6 millibar it
Between pressure carry out pressure-loaded, it can be achieved that the additive effect such as contact surface smoothing and the contact surface it is hydrophilic
Property significantly increases.
Alternatively, according to the present invention, the formation of hopper can be by using being especially compressed to a certain porosity in a controlled manner
Tetraethoxy-silicane alkoxide layer as superficial layer occur.
Another Favourable implementations according to the present invention, provide superficial layer mainly by, especially substantially completely by especially
It is unbodied by thermal oxidation generate silica form, and conversion zone by oxidizable material, especially mainly by, preferably
Substantially completely it is made of Si, Ge, InP, GaP or GaN.The especially stable reaction for being particularly effectively closed existing gap is to pass through
Oxidation is realized.
Herein, if the growth especially mainly formed by native silicon dioxide is arranged between the second contact surface and conversion zone
Layer, then its is especially advantageous according to the present invention.Grown layers are subjected to growth caused by reaction according to the present invention.Pass through amorphous Si O2
It is new formed and thus caused by the deformations of the grown layers especially swell, especially on the interface to the conversion zone and especially
In gap area between the first and second contact surfaces, the growth is by Si-SiO2Transformation (7) takes place.Cause in this way
The reduction of the distance between two contact surfaces or idle space reduce, and thus the bond strength between two substrates increases.Between
Between 200 DEG C and 400 DEG C, preferably be generally between 200 DEG C and 150 DEG C, the temperature that is more preferably between 150 DEG C and 100 DEG C
It spends, is most preferably especially advantageous between 100 DEG C of temperature between room temperature.
Herein, if grown layers have the average thickness A between 0.1nm and 5nm before the irreversible engagement of formation,
Its is especially advantageous.Grown layers are thinner, then the reaction occurred between first and second starting material by the grown layers is faster and more holds
Easily, especially the first starting material diffuses to the reaction of conversion zone by the grown layers.
An embodiment according to the present invention advantageously provides the formation for carrying out hopper in a vacuum.As a result, may be used
It is polluted to avoid hopper by unwanted material or compound.
In another embodiment of the present invention, it advantageously provides in the step of filling of hopper is by being set forth below
One or more carry out:
First contact surface is exposed in atmosphere to fill the storage using the oxygen contained in atmospheric humidity and/or air
Liquid bath,
By the first contact surface be exposed to especially mainly by, preferably almost by especially deionized H2O and/or
H2O2The fluid of composition,
First contact surface is exposed to the N especially with the ion energy within the scope of 0 to 200 eV2Gas and/
Or O2Gas and/or Ar gas and/or especially by 95% Ar and 5% H2The formation gas of composition,
Vapor deposition with using it is any it is already indicated that starting material fill the hopper.
If hopper preferably between 0.1nm and 25nm, be more preferably between 0.1nm and 15nm, even more excellent
Thickness R of the selected introductions between 0.1nm and 10nm, most preferably between 0.1nm and 5nm is formed, then is especially had to treatment progress
Effect.In addition, according to an embodiment of the invention, if just before forming the irreversible engagement between the hopper and the conversion zone
Average distance B between 0.1nm and 15nm, especially between 0.5nm and 5nm, be more preferably between 0.5nm with
It is advantageous between 3nm.
A kind of apparatus for carrying out the method is formed according to the present invention, have be used to form the hopper chamber and
For filling the chamber of the hopper being especially separately provided and being used to form the chamber of pre- engagement being especially separately provided, own
Chamber is all connected to each other directly via vacuum system.
In another embodiment, the filling of hopper can also be directly via atmosphere, i.e., in the chamber that can be opened to atmosphere
In or simply do not have collet but can it is semi-automatic and/or completely automatically handle chip structure on carry out.
From the description of following preferred exemplary embodiment and attached drawing is utilized, further advantage of the invention, feature and thin
Section will become obvious.
Detailed description of the invention
Fig. 1 show immediately in make first substrate contacted with the second substrate after as the method for the present invention first step,
Fig. 2 a and Fig. 2 b show be used to form more high bond strength as the method for the present invention other steps,
Fig. 3 is shown according to the other step after the step of Fig. 1, Fig. 2 a and Fig. 2 b such as method of the invention, wherein base
Plate contact surface contacts with each other,
Fig. 4 show for formed between the substrates irreversible/permanent engagement such as step of the invention,
Fig. 5 is shown according to the chemical/physical process carried out during the step of Fig. 3 and Fig. 4 in two contact surfaces
Enlarged drawing,
Fig. 6 be shown according to the chemistry carried out on the interface during the step of Fig. 3 and Fig. 4 between two contact surfaces/
Another enlarged drawing of physical process, and
Fig. 7 shows the schematic diagram of hopper produced according to the invention.
Specific embodiment
The identical reference numerals of identical or feature with phase same-action in figure.
The first contact surface 3 and the second of the second substrate 2 of first substrate 1 is merely displayed in situation shown in Fig. 1
The section of processing chemical reaction is carried out during pre- engagement step between contact surface 4 or immediately after.The surface has pole
Property OH base terminal therefore be hydrophilic.First substrate 1 and the second substrate 2 are by the OH base and H that are present on the surface2O molecule it
Between and only H2The attraction of water bridge between O molecule is fixed.At least the hydrophily of first contact surface 3 is in previous steps
Increased by the corona treatment of first contact surface 3.
Hopper 5 is formed by corona treatment according to the present invention in the superficial layer 6 being made of thermal silicon dioxide.It utilizes
O of the ion energy within the scope of 0 and 2000 eV2Ion carries out the average thickness of hopper 5 caused by corona treatment
R substantially 15nm, the ion form channel or hole in the superficial layer 6.
Similarly, H is used before step shown in Fig. 1 and after corona treatment2O is filled out as the first starting material
Fill the hopper 5.The reduction type of ion present in corona treatment may be alternatively located in the hopper, especially O2、N2、
H2、Ar。
Therefore, contact surface 3,4 still has relatively wide spacing, particularly depends on existing between the contact surface 3,4
Water.Therefore, existing bond strength is relatively small and is generally between 100 mJ/cm2With 300 mJ/cm2Between, especially greater than
200 mJ/cm2.In this regard, it is previous it is plasma-activated play a decisive role, be particularly due to through plasma-activated
The first contact surface 3 increased hydrophilicity and by the gas ions activate caused by smoothing effect.
Shown in Fig. 1 and be referred to as the method that engages in advance preferably can in environment temperature or it is 50 DEG C maximum at carry out.Fig. 2 a and
Fig. 2 b shows hydrophilic engagement, and wherein Si-O-Si bridge is formed by-OH sealing end facial cleft solution water outlet.Method in Fig. 2 a and Fig. 2 b
Continue substantially 300 hours at room temperature, substantially 60 hours at 50 DEG C.State in Fig. 2 b do not betide instruction at a temperature of and not
Generate the hopper.
H is formed between contact surface 3,42O molecule and at least partly provide H2O molecule is further to fill the reservoir
Slot 5, as long as there is also free spaces.Other H2O molecule is removed.In the step of according to Fig. 1,3 to 5 are substantially existed
Single OH base or H2O layers and from according to the step of Fig. 1 to a according to fig. 2 the step of, remove 1 to 3 single layer H2O is accommodated
In the hopper 5.
In step shown in fig. 2 a, hydrogen bridge band is formed directly between siloxane group now, is thus generated bigger
Engaging force.The distance between attract contact surface 3,4 more strongly each other and reduce the contact surface 3,4.
There is only 1 to 2 single OH bases between the contact surface 1,2 as a result,.
In step shown in figure 2b, successively according to the Reaction Separation H being hereafter inserted into2O molecule, in the contact table
The covalent bond in silanol form is formed between face 3,4, is led to stronger engaging force and is required smaller space, so that
The distance between described contact surface 3,4 further decreases, and meets directly with one another and last until based on the contact surface 3,4
Reach minimum range shown in Fig. 3:
Si-OH+HO-Si↔Si-O-Si+H2O。
Until in the stage 3, be particularly due to the formation of the hopper 5, without exceedingly increasing temperature, even if on the contrary in room
Also it may be allowed its progress under temperature.By this method, the processing step such as Fig. 1 to Fig. 3 quite can carefully be carried out.
In the method and step shown in Fig. 4, temperature be preferably increased to maximum 500 DEG C, more preferably up to 300 DEG C, even
More preferably up to 200 DEG C, 100 DEG C most preferably maximum, most preferably no more than room temperature, so as between the first and second contact surfaces
Form irreversible or permanent engagement.Relatively low temperature is only possible compared with the prior art for these, because of the reservoir
Slot 5 includes the first starting material for reaction shown in Fig. 5 and Fig. 6:
Si+2H2O→SiO2+2H2。
It is aforementioned be slightly increased at a temperature of, H2O molecule diffuses to conversion zone 7 from hopper 5 as the first starting material.This
Diffusion can directly contact with grown layers 8 via the superficial layer 6 formed as oxide layer or exist via between the oxide layer
Gap 9 and occur.Therefore, silica is the compound with the molal volume greater than pure silicon, as the anti-of above-mentioned reaction
Product 10 is answered to be formed by the conversion zone 7.The silica grows up on interface of the conversion zone 7 with grown layers 8 and thus makes to be formed
For native oxide grown layers 8 layer along gap 9 Direction distortion.Herein, it is also desirable to the H from hopper2O molecule.
Due to there is the gap in nanometer range, so a possibility that there are the protuberances of native oxide layer 8, therefore can
Reduce the stress in the contact surface 3,4.The distance between described contact surface 3,4 reduces by this method, thus further
It increases effective contact surface and thus further increases bond strength.It formed by this method, be closed all holes and in entire
The unwelded product in middle part can fundamentally promote the enhancing of engaging force to the welded connecting formed on chip compared with the prior art.
The bond types between two amorphous silicon faces being welded to one another are covalent and ionic portions mixed forms.
First starting material (H2O) with the previous reaction of the second starting material (Si) especially quickly or at alap temperature
Occur in the conversion zone, as long as the average distance B between first contact surface 3 and the conversion zone 7 is as small as possible.
Therefore, the pretreatment of first substrate 1 and the second substrate 2 are (by pasc reaction layer 7 and conduct grown layers 8 as thin as possible
Natural oxide layer composition) selection be conclusive.According to the present invention provided native oxide layer it is as thin as possible for
Two reasons.The grown layers 8 are very thin so that it since (superficial layer is as oxide skin(coating) for the superficial layer 6 towards opposing substrate 1
Formed) it can be swelled in the reaction product 10 being newly formed in the conversion zone 7, and mainly in the region of nano gap 9.In addition, the phase
Hope diffusion path as short as possible to obtain required effect fastly and at alap temperature as far as possible.Similarly, first substrate 1
It is made of silicon layer and being formed thereon as the oxide skin(coating) of superficial layer 6 (hopper 5 is at least partially or fully formed in wherein).
The first starting material for needing to be closed the amount of nano gap 9 is correspondingly at least filled in hopper 5 according to the present invention,
So that the grown layers 8 can occur most preferably growth and be received in the shortest possible time or being closed this at alap temperature
Rice gap 9.
Reference signs list
1 first substrate
2 the second substrates
3 first contact surfaces
4 second contact surfaces
5 hoppers
6 superficial layers
7 conversion zones
8 grown layers
9 nano gaps
10 reaction products
11 first curves
12 second curves
13 master curves
A average thickness
B average distance
R average thickness.
Claims (13)
1. the method that the first contact surface of first substrate is bonded to the second contact surface of the second substrate, this method have with
Lower step:
Hopper is formed in the superficial layer of the first contact surface,
The hopper is at least partly filled with the first starting material or first group of starting material,
The first contact surface is contacted with the second contact surface to form pre- engagement connection, and
Permanent engagement is formed between first and second contact surface, passes through the first for making to be filled in the hopper
The second starting material contained in beginning object or first group of starting material and the conversion zone of the second substrate reacts at least partly to strengthen this forever
Engagement long.
2. method as claimed in claim 1, wherein the formation of the permanent engagement and/or reinforcing are by diffusing to instead the first starting material
It answers in layer and carries out.
3. the method for claim 1 wherein the formation of the permanent engagement occur between room temperature with 200 DEG C at a temperature of between most
During more 1 hours.
4. the method for claim 1 wherein the permanent engagement is that have to be greater than 1.5 J/m2The irreversible of bond strength connect
It closes.
5. forming molal volume in a reactive layer the method for claim 1 wherein during the reaction and being greater than the second starting material
The reaction product of molal volume.
6. the method for claim 1 wherein superficial layers to be made of unbodied material, and conversion zone is made of oxidizable material.
7. the method for claim 1 wherein exist mainly to be formed by native silicon dioxide between the second contact surface and conversion zone
Grown layers.
8. method for claim 7, wherein grown layers have flat between 10nm between 1 angstrom before forming permanent engagement
Equal thickness (A).
9. the method for claim 1 wherein hopper is to be formed under vacuum.
10. the method for claim 1 wherein the one or more fillings in the step of hopper is by being set forth below:
First contact surface is exposed to comprising deionized H2O and/or H2O2Fluid, and
First contact surface is exposed to N2Gas and/or O2Gas and/or Ar gas and/or include 95% Ar and 5% H2Formation
Gas.
11. the method for claim 1 wherein the hopper is formed with the average thickness (R) between 0.1nm and 25nm
's.
12. the method for claim 1 wherein the average distances just before forming permanent engagement between hopper and conversion zone
(B) between 0.1nm and 15nm.
13. the method for any one of preceding claims, wherein the permanent engagement is with the engagement for 2 times of pre- bond strength
The irreversible engagement of intensity.
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| CN201510911760.2A CN105374667B (en) | 2011-01-25 | 2011-01-25 | Method for permanent engagement chip |
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| CN201180065964.9A CN103329247B (en) | 2011-01-25 | 2011-01-25 | Method for permanent engagement chip |
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| WO2001061743A1 (en) * | 2000-02-16 | 2001-08-23 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
| CN101138071A (en) * | 2005-04-22 | 2008-03-05 | 硅绝缘体技术有限公司 | A method of bonding two wafers made out of materials selected from semiconductor materials |
| JP2008513975A (en) * | 2004-08-13 | 2008-05-01 | ヒューレット−パッカード デベロップメント カンパニー エル．ピー． | System and method for low temperature plasma bonding |
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|---|---|---|---|---|
| US5427638A (en) * | 1992-06-04 | 1995-06-27 | Alliedsignal Inc. | Low temperature reaction bonding |
| WO2001061743A1 (en) * | 2000-02-16 | 2001-08-23 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
| JP2008513975A (en) * | 2004-08-13 | 2008-05-01 | ヒューレット−パッカード デベロップメント カンパニー エル．ピー． | System and method for low temperature plasma bonding |
| CN101138071A (en) * | 2005-04-22 | 2008-03-05 | 硅绝缘体技术有限公司 | A method of bonding two wafers made out of materials selected from semiconductor materials |
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