CN105355529A - Multi-layer surface conduction electron emission source structure and preparation method thereof - Google Patents
Multi-layer surface conduction electron emission source structure and preparation method thereof Download PDFInfo
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- CN105355529A CN105355529A CN201510808436.8A CN201510808436A CN105355529A CN 105355529 A CN105355529 A CN 105355529A CN 201510808436 A CN201510808436 A CN 201510808436A CN 105355529 A CN105355529 A CN 105355529A
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- electron emission
- surface conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
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- Manufacturing & Machinery (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
The invention discloses a multi-layer surface conduction electron emission source structure and a preparation method thereof. The multi-layer surface conduction electron emission source structure comprises a substrate, wherein the substrate is provided with a lower electrode, an electron emission film is deposited on the lower electrode, an insulation medium layer and an upper electrode are sequentially arranged from down to up between the lower electrode and the electron emission film, length of the upper electrode is smaller than length of the insulation medium layer, the electron emission film is provided with two nanometer cracks, the two nanometer cracks are arranged at two sides of the upper electrode, the two nanometer cracks are arranged on the insulation medium layer, and the upper electrode and the lower electrode are respectively connected with an anode and a cathode of a power source. The multi-layer surface conduction electron emission source structure has properties of relatively high current density and electron emission efficiency.
Description
Technical field
The invention belongs to flat-panel monitor manufacturing technology field, relate to a kind of multiple-level surface conduction electron emission source structure and preparation method thereof.
Background technology
The surface conduction electron emission displaying part (Surface-conductionElectron-emitterDisplay, SED) that CANON proposes, as the one of FED, its display effect very outstanding in current flat-panel display device.
The video picture principle of SED and traditional cathode-ray picture tube (CathodeRayTube, CRT) similar, what be different from CRT is, SED will scribble the glass plate of fluorescent material and be covered with the glass film plates laid parallel of exhibiting high surface conduction electron emission source, such structure the thickness of SED can be done quite thin, be easy to panelized, maximization; Meanwhile, the energy consumption of SED is also lower.During SED work, the device electrode of minus plate applies the voltage of one tens volts, then produce high field at the crack place of conducting film strong, due to tunnel effect, tunelling electrons flies to the other end from the one end in crack, thus produces surface conductive electric current.The a part of impact fluorescence powder in the electronics of cathode emission can be attracted after the anode of positive plate applies high pressure luminous.
The core of surface-conduction-electron emission display is surface-conduction electron emission source, and the technological difficulties preparing this emission source are on conductive film, how to form unified nanoscale crack, realizes tunelling electrons and launches.Canon Inc. develops through years of researches, by carrying out " adding electric forming " technique (electro-formingprocess) to film and " activation " technique (activationprocess) obtains nanoscale gap.But, the general principle that the technique that " adds electric forming " is formed utilizes the Joule heat powering up generation to heat " blowing " electron emission film, its position and width have randomness, consistency between each electron emission unit is poor, have impact on the performance of electron emission source, make the current density of surface-conduction electron emission source and electronic transmitting efficiency lower.
Summary of the invention
The object of the invention is to the shortcoming overcoming above-mentioned prior art, provide a kind of multiple-level surface conduction electron emission source structure and preparation method thereof, current density and the electronic transmitting efficiency of this structure are higher, and are convenient to preparation.
For achieving the above object, multiple-level surface conduction electron emission source structure of the present invention, it is characterized in that, comprise substrate, substrate is provided with bottom electrode, electron emission film is deposited on bottom electrode, and be provided with insulating medium layer and top electrode successively from bottom to top between bottom electrode and electron emission film, wherein, the length of top electrode is less than the length of insulating medium layer, electron emission film offers two nanometer cracks, two nanometer cracks are positioned at the both sides of top electrode, two nanometer cracks are positioned on insulating medium layer, top electrode and bottom electrode are connected with the positive pole of power supply and negative pole respectively.
The thickness of described bottom electrode is 20 ~ 200nm, and bottom electrode and top electrode are prepared from by gold, platinum, copper, silver, nickel or chromium.
Bottom electrode is ito glass plate.
The thickness of electron emission film is 30 ~ 100nm, and electron emission film is made up of palladium oxide or zinc oxide.
The thickness of described insulating medium layer is 50 ~ 200nm, and insulating medium layer adopts magnesium dioxide, silicon dioxide, aluminium dioxide or hafnium oxide material to make.
Electron emission film is provided with projection, and protruding middle part is provided with gap vertically, and the under-filled of gap has protruding medium, and the top in gap is as nanometer crack.
The width of protruding medium is 1 ~ 5 μm, and thickness is 20 ~ 200nm.
The manufacture method of multiple-level surface conduction electron emission source structure of the present invention comprises the following steps:
1) on substrate, bottom electrode is made;
2) magnetron sputtering method is adopted to prepare insulating medium layer on the bottom electrode;
3) magnetron sputtering method is adopted to prepare top electrode at insulating medium layer;
4) magnetron sputtering method is adopted to prepare electron emission film on insulating medium layer, top electrode and bottom electrode;
5) electric forming technology is added to electron emission film employing and obtain nanometer crack, obtain multiple-level surface conduction electron emission source structure.
The present invention has following beneficial effect:
Multiple-level surface conduction electron emission source structure of the present invention and method comprise substrate, substrate is provided with bottom electrode, electron emission film is deposited on bottom electrode, and be provided with insulating medium layer and top electrode successively from bottom to top between bottom electrode and electron emission film, the otherness of the feature of the difference in thickness of electron emission film between multi-layered electrode and the electron emission film covered on top electrode and other parts of electron emission film is utilized to make the electron emission film covered on top electrode produce more Joule heat when " adding electric forming ", nanometer crack can be formed at insulating medium layer, realize the controlled making of nanometer crack location, and then by filling the padded electron emission film of insulating medium layer between top electrode and bottom electrode, shorten the distance between electron emission film and positive plate, make electron tunneling launch after easier scattering and attract by anode, effectively increase the ratio of tunelling electrons directive anode, thus improve field emission electron efficiency and current density, structure is simple, display pixel point integrated level is high, and the nanometer crack stability that the method is formed is strong, be easy to control and preparation, be applicable to large-scale production.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of SED;
Fig. 2 is structural representation of the present invention;
Fig. 3 is profile of the present invention;
Fig. 4 is the vertical view of Fig. 3;
Fig. 5 is profile when having protruding filled media in the present invention;
Fig. 6 is the vertical view of Fig. 5.
Wherein, 100 be substrate, 150 be bottom electrode, 160 be top electrode, 250 be electron emission film, 260 be nanometer crack, 300 be insulating medium layer, 310 for protruding medium.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail:
With reference to figure 2, Fig. 3 and Fig. 4, multiple-level surface conduction electron emission source structure of the present invention comprises substrate 100, substrate 100 is provided with bottom electrode 150, electron emission film 250 is deposited on bottom electrode 150, and be provided with insulating medium layer 300 and top electrode 160 from bottom to top successively between bottom electrode 150 and electron emission film 250, wherein, the length of top electrode 160 is less than the length of insulating medium layer 300, electron emission film 250 offers two nanometer cracks 260, two nanometer cracks 260 are positioned at the both sides of top electrode 160, two nanometer cracks 260 are positioned on insulating medium layer 300, top electrode 160 and bottom electrode 150 are connected with the positive pole of power supply and negative pole respectively.
It should be noted that, the thickness of described bottom electrode 150 is 20 ~ 200nm, and bottom electrode 150 and top electrode 160 are prepared from by gold, platinum, copper, silver, nickel or chromium; Bottom electrode 150 is ito glass plate; The thickness of electron emission film 250 is 30 ~ 100nm, and electron emission film 250 is made up of palladium oxide or zinc oxide; The thickness of described insulating medium layer 300 is 50 ~ 200nm, and insulating medium layer 300 adopts magnesium dioxide, silicon dioxide, aluminium dioxide or hafnium oxide material to make.
With reference to figure 5 and Fig. 6, in addition, electron emission film 250 is provided with projection, protruding middle part is provided with gap vertically, and the under-filled of gap has protruding medium 310, and the top in gap is as nanometer crack 260, the width of protruding medium 310 is 1 ~ 5 μm, and thickness is 20 ~ 200nm.
The manufacture method of multiple-level surface conduction electron emission source structure of the present invention comprises the following steps:
1) bottom electrode 150 is made on the substrate 100;
2) magnetron sputtering method is adopted to prepare insulating medium layer 300 on bottom electrode 150;
3) magnetron sputtering method is adopted to prepare top electrode 160 at insulating medium layer 300;
4) magnetron sputtering method is adopted to prepare electron emission film 250 on insulating medium layer 300, top electrode 160 and bottom electrode 150;
5) electric forming technology is added to electron emission film 250 employing and obtain nanometer crack 260, obtain multiple-level surface conduction electron emission source structure.
With reference to figure 1, SED principle is: the structure of a SED display pixel, SED contains infrabasal plate 100 and upper substrate, each pixel cell comprises RGB three sub-pixels, multiple-level surface conduction electron emission source structure fabrication also comprises a high voltage anode and cathode device voltage at substrate 100, the SED display device of glass material.When applying direct voltage on bottom electrode 150, electron emission film 250 meeting electron emission, under the voltage of high voltage anode accelerates, electronics impact fluorescence powder is luminous.
Claims (8)
1. a multiple-level surface conduction electron emission source structure, it is characterized in that, comprise substrate (100), substrate (100) is provided with bottom electrode (150), electron emission film (250) is deposited on bottom electrode (150), and between bottom electrode (150) and electron emission film (250), be provided with insulating medium layer (300) and top electrode (160) from bottom to top successively, wherein, the length of top electrode (160) is less than the length of insulating medium layer (300), electron emission film (250) offers two nanometer cracks (260), two nanometer cracks (260) are positioned at the both sides of top electrode (160), two nanometer cracks (260) are positioned on insulating medium layer (300), top electrode (160) and bottom electrode (150) are connected with the positive pole of power supply and negative pole respectively.
2. multiple-level surface conduction electron emission source structure according to claim 1, it is characterized in that, the thickness of described bottom electrode (150) is 20 ~ 200nm, and bottom electrode (150) and top electrode (160) are prepared from by gold, platinum, copper, silver, nickel or chromium.
3. multiple-level surface conduction electron emission source structure according to claim 1, is characterized in that, bottom electrode (150) is ito glass plate.
4. multiple-level surface conduction electron emission source structure according to claim 1, is characterized in that, the thickness of electron emission film (250) is 30 ~ 100nm, and electron emission film (250) is made up of palladium oxide or zinc oxide.
5. multiple-level surface conduction electron emission source structure according to claim 1, it is characterized in that, the thickness of described insulating medium layer (300) is 50 ~ 200nm, and insulating medium layer (300) adopts magnesium dioxide, silicon dioxide, aluminium dioxide or hafnium oxide material to make.
6. multiple-level surface conduction electron emission source structure according to claim 1, it is characterized in that, electron emission film (250) is provided with projection, protruding middle part is provided with gap vertically, the under-filled of gap has protruding medium (310), and the top in gap is as nanometer crack (260).
7. multiple-level surface conduction electron emission source structure according to claim 1, is characterized in that, the width of protruding medium (310) is 1 ~ 5 μm, and thickness is 20 ~ 200nm.
8. a manufacture method for multiple-level surface conduction electron emission source structure as claimed in claim 1, is characterized in that, comprise the following steps:
1) on substrate (100), bottom electrode (150) is made;
2) magnetron sputtering method is adopted to prepare insulating medium layer (300) on bottom electrode (150);
3) magnetron sputtering method is adopted to prepare top electrode (160) at insulating medium layer (300);
4) magnetron sputtering method is adopted to prepare electron emission film (250) on insulating medium layer (300), top electrode (160) and bottom electrode (150);
5) electric forming technology is added to electron emission film (250) employing and obtain nanometer crack (260), obtain multiple-level surface conduction electron emission source structure.
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| CN201510808436.8A CN105355529A (en) | 2015-11-19 | 2015-11-19 | Multi-layer surface conduction electron emission source structure and preparation method thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1167059A (en) * | 1997-08-19 | 1999-03-09 | Shinko Electric Ind Co Ltd | Cold cathode electron source, and its manufacture |
| CN1335999A (en) * | 1999-01-19 | 2002-02-13 | 佳能株式会社 | Method and apparatus for manufacturing electron beam device, and image creating device manufactured by these manufacturing methods and apparatus method and apparatus for manufacturing electron source |
| CN102262991A (en) * | 2011-07-11 | 2011-11-30 | 西安交通大学 | Preparation method of electron emission source nano seam array of surface conduction electron emitter display (SED) |
| CN104576267A (en) * | 2015-01-23 | 2015-04-29 | 西安交通大学 | Surface conduction electron emission source structure and manufacturing method of surface conduction electron emission source structure |
-
2015
- 2015-11-19 CN CN201510808436.8A patent/CN105355529A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1167059A (en) * | 1997-08-19 | 1999-03-09 | Shinko Electric Ind Co Ltd | Cold cathode electron source, and its manufacture |
| CN1335999A (en) * | 1999-01-19 | 2002-02-13 | 佳能株式会社 | Method and apparatus for manufacturing electron beam device, and image creating device manufactured by these manufacturing methods and apparatus method and apparatus for manufacturing electron source |
| CN102262991A (en) * | 2011-07-11 | 2011-11-30 | 西安交通大学 | Preparation method of electron emission source nano seam array of surface conduction electron emitter display (SED) |
| CN104576267A (en) * | 2015-01-23 | 2015-04-29 | 西安交通大学 | Surface conduction electron emission source structure and manufacturing method of surface conduction electron emission source structure |
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