CN105355528A - Dual-electron-beam terahertz wave radiation source in overmode cascading high frequency structure - Google Patents
Dual-electron-beam terahertz wave radiation source in overmode cascading high frequency structure Download PDFInfo
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- CN105355528A CN105355528A CN201510707076.2A CN201510707076A CN105355528A CN 105355528 A CN105355528 A CN 105355528A CN 201510707076 A CN201510707076 A CN 201510707076A CN 105355528 A CN105355528 A CN 105355528A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
- H01J25/34—Travelling-wave tubes; Tubes in which a travelling wave is simulated at spaced gaps
- H01J25/42—Tubes in which an electron stream interacts with a wave travelling along a delay line or equivalent sequence of impedance elements, and with a magnet system producing an H-field crossing the E-field
- H01J25/44—Tubes in which an electron stream interacts with a wave travelling along a delay line or equivalent sequence of impedance elements, and with a magnet system producing an H-field crossing the E-field the forward travelling wave being utilised
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/02—Electrodes; Magnetic control means; Screens
- H01J23/04—Cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/02—Electrodes; Magnetic control means; Screens
- H01J23/06—Electron or ion guns
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Abstract
The invention provides a dual-electron-beam terahertz wave radiation source. The terahertz wave radiation source adopts an overmode cascading folded waveguide traveling-wave amplified high frequency structure, so that the length of a single-section folded waveguide slow-wave structure can be dramatically shortened, and the demand on the magnetic field is reduced. The terahertz wave radiation source adopts the dual-electron beam excitation mode, so that the output power can be improved, and the demand on the negative electrode current emitting density is reduced as well; the input signal adopts a higher mode TE20 mode, so that the dimension of the slow-wave structure can be enlarged, and the processing of the slow-wave structure can be performed conveniently; within the same terahertz wave radiation source, the high power terahertz wave output is realized, and the design and the processing of the terahertz wave radiation source are facilitated; and therefore, the applications of the terahertz wave radiation source in the anti-interference, harmful substance detection, ultra wide band radar long-distance detection and high-resolution imaging radar and the like are promoted.
Description
Technical field
The present invention relates to vacuum electron device technical field, particularly relate to a kind of bielectron note terahertz radiation source crossing mould cascade high-frequency structure.
Background technology
Terahertz (Terahertz) ripple is that frequency is in 0.1THz-10THz (1THz=10
12hz) electromagnetic wave between, between the microwave and millimeter wave and far infrared light wave of development relative maturity, the wavelength characteristic of its uniqueness makes this wave band be with a wide range of applications in fields such as measuring the optical properties of material substance, biomedical imaging, surface chemistry and the research of high field condensed state matter, also there is important application prospect in the radar detection of military field, secure communication simultaneously.THz wave in significant application value that is military and civil area, causes national governments' particularly the showing great attention to and drop into a large amount of resources for developing THz wave science and technology of the military.THz wave has market potential prospect in dual-use field, why can't obtain and apply widely particularly in national defence? the most also be wherein most the underlying cause be lack high power, compact adjustable room temperature terahertz radiation source, it becomes one of Terahertz Technology bottleneck pushing extensive use to.Therefore seek effective ways, exploring new mechanism, to develop high performance terahertz radiation source be very necessary, and to the application of promotion THz wave in military and civilian two, there is important strategic importance.
Multiple method is had to produce terahertz radiation.As: semiconductor terahertz radiation source (as THz-QCL etc.); Based on the Terahertz generator of photonic propulsion; Utilize the terahertz radiation source of free electron (comprising Terahertz vacuum device, electronic cyclotron maser and free-electron laser); Based on the terahertz emission source etc. of high energy acclerator.THz-QCL radiation source becomes the barrier of its extensive use due to the restriction being subject to extremely low temperature, the power exported based on the THz source of photonic propulsion is lower, and based on the terahertz emission source of high energy acclerator owing to needing large accelerator, the application that its extensive use is included in military field is also greatly limited.In terahertz emission source, based on the folded waveguide travelling-wave amplifier (FoldedWaveguideTraveling-WaveTube of vacuum electronics, be called for short FW-TWT) owing to taking into account the advantage of helix TWT and coupled-cavity TWT simultaneously, there is high-gain and wide band feature, high power, broadband, compact terahertz emission source can be developed into, the particularly application of folded waveguide travelling-wave amplifier on Terahertz radar, thus receives showing great attention to of scholars and the military.
Relatively similar vacuum electronics device, its lamps structure is firm, thermal diffusivity good, dispersion flattene, high-frequency transmission loss are little, coupling matching easily, with the advantage such as MEMS technology is compatible, therefore folded waveguide travelling wave tube solves the high-power and wide band contradiction that THz devices fails to overcome for a long time preferably.Result of study shows, folded waveguide travelling wave tube is the extremely potential wideband high-power device of millimeter wave and submillimeter region.It becomes a hot research field in vacuum electronics terahertz emission source.
Fig. 1 is the schematic diagram of Terahertz unistage type list note folded waveguide travelling-wave amplifier in prior art.Travelling-wave amplifier passes through input signal port one 01 by input signal RF
inbe input in row ripple high-frequency structure 107, the row ripple electron beam 105 produced with gun cathode 102 in high-frequency structure interacts, the THz wave RF be exaggerated
outexport from output port 104, the electron beam after effect is collected pole 106 and collects.This structure is common travelling-wave tube amplifier, has the characteristic of power amplification and band spread.
Realizing in process of the present invention, applicant finds that prior art THz wave radiation source has following technical problem:
(1) coupling impedance of folded waveguide structure itself is low, and interaction efficiency is not high, and power output is little, makes it be greatly limited in application aspect such as ULTRA-WIDEBAND RADAR long-range detection, high-resolution imaging radars.
(2) due to the restriction of physical dimension, in Terahertz frequency range processing difficulties, processing precision direct influence is to the service behaviour of amplifier.Therefore process technology limits the realization of its high-power folded waveguide travelling-wave amplifier.
Summary of the invention
(1) technical problem that will solve
In view of above-mentioned technical problem, the invention provides a kind of bielectron note terahertz emission source crossing mould cascade folded waveguide travelling-wave amplifier.
(2) technical scheme
According to an aspect of the present invention, the bielectron note terahertz emission source that mould folded waveguide travelling-wave amplifier is crossed in a kind of cascade is provided.The bielectron note terahertz emission source that mould folded waveguide travelling-wave amplifier is crossed in this cascade comprises: first paragraph bielectron note electron gun, second segment bielectron note electron gun, first paragraph electron beam collector, second segment electron beam collector, magnetic field generation section part, first paragraph folded waveguide high-frequency structure, second segment folded waveguide high-frequency structure.Wherein: first paragraph bielectron note electron gun, comprising: the first negative electrode of first paragraph and the second negative electrode, wherein, the first negative electrode and the second cathode emission electron beam laid out in parallel in the horizontal direction, the direction of propagation is parallel to each other.Second segment bielectron note electron gun, comprising: the first negative electrode of second segment and the second negative electrode, wherein, the first negative electrode and the second cathode emission electron beam laid out in parallel in the horizontal direction, the direction of propagation is parallel to each other.
First paragraph electron beam collector, be arranged at the negative electrode of first paragraph bielectron note electron gun just to position, form first paragraph Beam and wave interaction district between the bielectron of first paragraph note negative electrode and first paragraph electron beam collector.Second segment electron beam collector, be arranged at the negative electrode of second segment bielectron note electron gun just to position, form second segment section Beam and wave interaction district between the bielectron of second segment note negative electrode and second segment electron beam collector.
Magnetic field generation section part, is arranged at the both sides in first paragraph Beam and wave interaction district and second segment Beam and wave interaction district, for generation of the magnetic field being parallel to first paragraph bielectron note and the transmission direction of second segment bielectron note.Cascade high-frequency structure, comprising: first paragraph high-frequency structure, is arranged at first paragraph Beam and wave interaction district; Second segment high-frequency structure, is arranged at second segment Beam and wave interaction district, and its ripple entrance is connected to the outlet of first paragraph high-frequency structure by cascade structure.
Higher modes TE
20the THz wave of mould is by the incident first paragraph high-frequency structure of input signal port, note with the bielectron of first paragraph in first paragraph high-frequency structure and interact, THz wave obtains power amplification and frequency bandspread, and the bielectron note after the effect of first paragraph high-frequency structure is collected by first paragraph electron beam collector; THz wave is by the incident second segment high-frequency structure of cascade structure; The bielectron that the negative electrode of second segment bielectron note electron gun produces is noted, interact with THz wave in second segment high-frequency structure, power amplification and frequency bandspread are carried out to THz wave, bielectron note after the effect of second segment high-frequency structure is collected by second segment electron beam collector, and the THz wave after power amplification and frequency bandspread is exported by the ripple of second segment high-frequency structure and exports.
(3) beneficial effect
As can be seen from technique scheme, the bielectron note terahertz emission source that mould folded waveguide travelling-wave amplifier is crossed in cascade of the present invention has following beneficial effect:
(1) bielectron note is adopted to interact with THz wave, compared with noting with single electron, the requirement of target emission current densities can be reduced, be conducive to the useful life increasing device, and introduce bielectron note and can shorten saturation length, shorten the length of homogeneous tube, reduce device to the requirement in magnetic field;
(2) laid out in parallel two electron beams in the horizontal direction, adopt higher modes TE
20mould and bielectron are noted and are interacted, and the bielectron of horizontal direction laid out in parallel is noted and is just in TE
20the most strength of electric field of mould, can make interaction efficiency reach maximum;
(3) adopt cascade structure, the power of ripple can be made further to be amplified, achieve the high-power output in Terahertz frequency range by the cascade of multisection type folded waveguide.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of Terahertz folded waveguide travelling-wave amplifier in prior art;
Fig. 2 is the bielectron note terahertz emission source structure schematic diagram crossing mould cascade high-frequency structure in the embodiment of the present invention;
Fig. 3 is the dispersion curve figure that embodiment of the present invention cascade crosses the bielectron note terahertz emission source of mould folded waveguide travelling-wave amplifier.
[main element symbol description of the present invention]
201-first paragraph first negative electrode; 202-first paragraph second negative electrode
Bottom 203-bielectron note electron gun; 204-second segment first negative electrode
205-second segment second negative electrode; 206-export structure
207-focusing magnetic field; 208-second segment second electron beam;
209-second segment first electron beam; 210-second segment electron beam collector;
211-second segment high-frequency structure; 212-first paragraph high-frequency structure;
213-first paragraph electron beam collector; 214-first paragraph second electron beam;
215-first paragraph first electron beam; 216-input structure;
217-focusing magnetic field;
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
It should be noted that, in accompanying drawing or specification describe, similar or identical part all uses identical figure number.The implementation not illustrating in accompanying drawing or describe is form known to a person of ordinary skill in the art in art.In addition, although herein can providing package containing the demonstration of the parameter of particular value, should be appreciated that, parameter without the need to definitely equaling corresponding value, but can be similar to corresponding value in acceptable error margin or design constraint.In addition, the direction term mentioned in following examples, such as " on ", D score, "front", "rear", "left", "right" etc., be only the direction with reference to accompanying drawing.Therefore, the direction term of use is used to illustrate and is not used for limiting the present invention.
The invention provides a kind of mould cascade high-frequency structure bielectron of crossing and note terahertz emission source.In this bielectron note terahertz emission source, higher modes TE
20first the THz wave of mould is noted with the bielectron of first paragraph and mutual effect is occurred under the effect of first paragraph high-frequency structure, and THz wave obtains power amplification and frequency bandspread, then by the incident second segment high-frequency structure of cascade structure; Under the effect of second segment high-frequency structure, THz wave continues to note with second segment bielectron to interact, and THz wave obtains power amplification and frequency bandspread further.
In one exemplary embodiment of the present invention, provide a kind of bielectron note terahertz emission source.Fig. 2 is the structural representation of bielectron note terahertz radiation source in the embodiment of the present invention.
Please refer to Fig. 2, the present embodiment is crossed mould cascade high-frequency structure bielectron note terahertz emission source and is comprised: bielectron note electron gun, cascade high-frequency structure, magnetic field generation section part.Wherein, cascade high-frequency structure comprises: first paragraph high-frequency structure 212 in the same plane and second segment high-frequency structure 211.The THz wave outlet of first paragraph high-frequency structure 212 is connected to the entrance of second segment high-frequency structure 211.
Below respectively to the present embodiment cross mould cascade high-frequency structure bielectron note terahertz emission source each part be described in detail.
Bielectron note electron gun comprises first paragraph bielectron note electron gun and second segment bielectron note electron gun; Described first paragraph bielectron note electron gun comprises: first paragraph first negative electrode 201, first paragraph second negative electrode 202, first paragraph electron beam collector 213, described first paragraph electron beam collector 213 is just arranged the negative electrode of first paragraph bielectron note electron gun, forms first paragraph Beam and wave interaction district between the two; .
Described second segment bielectron note electron gun comprises: second segment first negative electrode 204, second segment second negative electrode 205, second segment electron beam collector 210.Described second segment electron beam collector 210 is just arranged the negative electrode of second segment bielectron note electron gun, forms second segment Beam and wave interaction district between the two.
Wherein the bielectron note of first paragraph bielectron note electron gun is horizontal alignment arrangement, and the bielectron note of second segment bielectron note electron gun is also horizontal alignment arrangement.The direction of propagation of the bielectron note of first paragraph and second segment bielectron note electron gun is parallel to each other.First paragraph is all identical with the bielectron note voltage of second segment bielectron note electron gun, and their voltage value is between 10kV-25kV.Wherein, bielectron note electron gun can be the twin cathode electron gun be made up of any one cathode shapes such as circle, ellipse, ribbon beam and carbon nano pipe array negative electrodes.
Described magnetic field generation section part comprises the first magnetic field generation section part 207 and the second magnetic field generation section part 217, be arranged at the both sides in first paragraph Beam and wave interaction district and second segment Beam and wave interaction district respectively, for generation of the magnetic field perpendicular to described first paragraph bielectron note and the transmission direction of second segment bielectron note; Described magnetic field generation section part is the wherein a kind of of following form: permanent magnet, periodically permanent magnet focusing system, electromagnetic focusing system and electrostatic focusing system.In the present embodiment, the first and second magnetic field generation section parts 207 and 217 are preferably circular permanent magnet, are arranged at the both sides in first paragraph Beam and wave interaction district and second segment Beam and wave interaction district, and it produces the magnetic field perpendicular to electron beam transmission direction.
Under this introduction by magnetic field, noted the bielectron note 214 and 215 of two cathode emissions of electron gun by first paragraph bielectron, interact in first paragraph high-frequency structure 212 with the THz wave of input, then collected by first paragraph electron beam collector; The bielectron note 208 and 209 launched by two negative electrodes 204 and 205 of second segment, with THz wave generation mutual effect in second segment high-frequency structure 211, is then collected by second segment electron beam collector 210.
In addition, in the present invention, magnetic field generation section part can also adopt the forms such as periodicity permanent magnet focusing system, electromagnetic focusing system and electrostatic focusing system.
Described cascade high-frequency structure comprises first paragraph high-frequency structure 212 and second segment high-frequency structure 211; The delivery outlet of described first paragraph high-frequency structure 212 is connected to the input port of second segment high-frequency structure 211 by cascade structure, described cascade structure is: directly syndeton, gradual change shape structure or step structure.
First paragraph high-frequency structure 212 is periodic structure, the first paragraph Beam and wave interaction district between two negative electrodes 201,202 and first paragraph electron beam collector 213 of first paragraph bielectron note electron gun.In first paragraph high-frequency structure 212, the bielectron note 214,215 that two negative electrodes that the THz wave of input and first paragraph bielectron note electron gun produce interacts, THz wave obtains power amplification and frequency bandspread, and the bielectron note 214,215 after first paragraph Beam and wave interaction is captured by first paragraph electron beam collector 213.
First paragraph high-frequency structure 212 comprises two-stage structure, its input port receives input terahertz signal, delivery outlet is connected to second segment high frequency interfaces 211, wherein: first paragraph is clustering section, under the effect of the terahertz signal of input, for noting negative electrode 201 to from first paragraph bielectron, the 202 bielectron notes 214 produced, 215 carry out clustering produces clustering electron beam group, second segment is mutual effect section, described THz wave is rolled into a ball interacted by itself and the clustering electron beam produced, make THz wave power amplification and frequency bandspread, THz wave after amplification outputs to second segment high-frequency structure 211.
First paragraph in first paragraph high-frequency structure 212 and second segment high-frequency structure are folded waveguide slow wave structure, also can be periodicity grating, coupling cavity, helix etc.
Second segment high-frequency structure 211 is periodic structure, the second segment Beam and wave interaction district between two negative electrodes 204,205 and second segment electron beam collector 210 of second segment.In second segment high-frequency structure 211, the THz wave of input and the bielectron note 208,209 of second segment interact, THz wave obtains power amplification and frequency bandspread further, and the bielectron note 208,209 after second segment Beam and wave interaction is captured by second segment electron beam collector 210.
Second segment high-frequency structure 211 comprises two-stage structure, its input port is connected to first paragraph high-frequency structure 212, delivery outlet is for exporting terahertz signal, wherein: first paragraph is clustering section, under the effect of the terahertz signal of input, for noting negative electrode 204 to from second segment bielectron, the 205 bielectron notes 208 produced, 209 carry out clustering produces clustering electron beam group, second segment is mutual effect section, described THz wave and clustering electron beam are rolled into a ball and are interacted in the second segment of second segment high-frequency structure 211, make the further power amplification of THz wave and frequency bandspread, terahertz signal exports from ripple outlet.
First paragraph in the high-frequency structure 211 of second segment Beam and wave interaction and second segment high-frequency structure are folded waveguide slow wave structure, also can be periodicity grating, coupling cavity, helix etc.Described second segment high-frequency structure is taked with one of them output of under type: evenly export, grading structure exports or antenna exports.
Connected by straight wave guide section between first paragraph high-frequency structure 211 and second segment high-frequency structure 212, described straight wave guide section fills attenuating material, the THz wave power of clustering section is absorbed, prevent end reflection ripple from entering into clustering section simultaneously and cause backward wave oscillation.
Fig. 3 is the TE in the embodiment of the present invention
20the dispersion curve figure of mould bielectron note folded waveguide.As seen from Figure 3, achieve in this device and introduce bielectron note in folded waveguide, and input higher modes TE
20mould, realizes amplifying output.
The bielectron note terahertz emission source that mould folded waveguide travelling-wave amplifier is crossed in the present embodiment cascade achieves output that is high-power, broadband terahertz signal, and be convenient to processing, thus be conducive to realizing the densification of miniature Terahertz vacuum electron device and integrated, and, by cascade high-frequency structure, shorten Beam and wave interaction distance, reduce the development difficulty of electron-optical system, alleviate magnetic field weight.
So far, by reference to the accompanying drawings the present embodiment has been described in detail.Describe according to above, those skilled in the art should have terahertz radiation source of the present invention and have clearly been familiar with.
In addition, the above-mentioned definition to each element is not limited in the various concrete structure or shape mentioned in execution mode, and those of ordinary skill in the art can replace it with knowing simply.
In sum, the invention provides the bielectron note terahertz emission source that mould folded waveguide travelling-wave amplifier is crossed in a kind of cascade.This terahertz radiation source adopts bielectron note to drive, input higher modes TE
20mould carries out mutual effect, and adopts the form of cascade amplifier, and THz wave is exaggerated further.In same THz source, achieve output that is high-power, broadband terahertz signal, and be convenient to processing, be conducive to the application of terahertz radiation source in anti-interference, harmful substance detection, ULTRA-WIDEBAND RADAR long-range detection and high-resolution imaging radar etc.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a bielectron note terahertz emission source for mode structure is crossed in cascade, it is characterized in that, comprising:
Bielectron note electron gun, comprising: first paragraph bielectron note electron gun and second segment bielectron note electron gun, produce the first bielectron note and the second bielectron note respectively; Described first paragraph bielectron note electron gun comprises: first paragraph first negative electrode, first paragraph second negative electrode, first paragraph electron beam collector, described first paragraph electron beam collector is just arranged described first paragraph first negative electrode and first paragraph second negative electrode, forms first paragraph Beam and wave interaction district; Described second segment bielectron note electron gun comprises: second segment first negative electrode, second segment second negative electrode, second segment electron beam collector; Described second segment electron beam collector is just arranged second segment first negative electrode and the second negative electrode, forms second segment Beam and wave interaction district; Wherein, described first paragraph Beam and wave interaction district and second segment Beam and wave interaction district are arranged side by side;
Magnetic field generation section part, comprising: the first magnetic field generation section part and the second magnetic field generation section part, is arranged at the both sides in first paragraph Beam and wave interaction district and the second segment Beam and wave interaction district be arranged side by side, for generation of the magnetic field perpendicular to electron beam transmission direction;
Cascade high-frequency structure, comprising: first paragraph high-frequency structure and second segment high-frequency structure, lays respectively at described first paragraph Beam and wave interaction district and second segment Beam and wave interaction district; Under the magnetic fields that the terahertz signal of input produces at described magnetic field generation section part, note with described first bielectron in described first paragraph high-frequency structure and interact, the terahertz signal after effect exports second segment high-frequency structure to; The terahertz signal inputing to second segment high-frequency structure, under the effect in described magnetic field, after noting and interact, exports from second segment high-frequency structure with described second bielectron.
2. bielectron note terahertz emission source according to claim 1, it is characterized in that, the delivery outlet of described first paragraph high-frequency structure is connected to second segment high-frequency structure by cascade structure, and described cascade structure is: directly syndeton, gradual change shape structure or step structure.
3. bielectron note terahertz emission source according to claim 1, it is characterized in that, described first paragraph high-frequency structure comprises: clustering section and mutual effect section; Under the effect of THz wave, described clustering section is used for carrying out clustering to the first bielectron note and produces clustering electron beam group; Described clustering electron beam group interacts with described THz wave in mutual effect section, exports after carrying out power amplification to described THz wave.
4. bielectron note terahertz emission source according to claim 3, is characterized in that:
Described first high-frequency structure is connected to the second high-frequency structure by straight wave guide section, and described straight wave guide section is filled with attenuating material, for absorbing the THz wave power of clustering section, preventing end reflection ripple from entering into clustering section simultaneously and causing clustering disorderly.
5. the bielectron note terahertz emission source of mould folded waveguide travelling-wave amplifier is crossed in cascade according to claim 1, and it is characterized in that, described second segment high-frequency structure comprises: clustering section and mutual effect section; Under the effect of THz wave, described clustering section is used for carrying out clustering to the second bielectron note and produces clustering electron beam group; Described clustering electron beam group interacts with described THz wave in mutual effect section, exports after carrying out power amplification to described THz wave.
6. bielectron note terahertz emission source according to claim 5, is characterized in that, described second segment high-frequency structure is taked with one of them output of under type: evenly export, grading structure exports or antenna exports.
7. bielectron note terahertz emission source according to any one of claim 1 to 6, it is characterized in that, the cathode shape of described first paragraph first negative electrode, first paragraph second negative electrode, second segment first negative electrode and second segment second negative electrode is any one in following shape: circular, oval, ribbon beam and carbon nano pipe array negative electrode.
8. bielectron note terahertz emission source according to any one of claim 1 to 6, is characterized in that, described magnetic field generation section part is the wherein a kind of of following form: permanent magnet, periodically permanent magnet focusing system, electromagnetic focusing system and electrostatic focusing system.
9. bielectron note terahertz emission source according to any one of claim 1 to 6, is characterized in that, the operating voltage of described first bielectron note and the second bielectron note is between 10kV-25kV.
10. the bielectron note terahertz emission source as described in any one of claim 1 to 6, it is characterized in that, described first electron beam is parallel with the direction of propagation of the second electron beam.
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| CN105938972A (en) * | 2016-07-01 | 2016-09-14 | 中国科学技术大学 | Double-electron-beam double-grating based terahertz free electron laser source |
| CN106935456A (en) * | 2017-04-25 | 2017-07-07 | 中国电子科技集团公司第十二研究所 | A kind of helix TWT based on segmentation tandem slow wave system |
| CN108335958A (en) * | 2018-02-07 | 2018-07-27 | 电子科技大学 | A kind of double note slow-wave structures of winding waveguide of photonic crystal load |
| CN109599316A (en) * | 2017-09-30 | 2019-04-09 | 中国人民解放军国防科技大学 | X-waveband high-gain high-efficiency triaxial relativistic klystron amplifier |
| CN109887820A (en) * | 2019-03-15 | 2019-06-14 | 电子科技大学 | A kind of folded waveguide forward-wave-backward wave reaction type terahertz emission source |
| CN110416041A (en) * | 2019-06-21 | 2019-11-05 | 中国科学院电子学研究所 | A kind of Embedded Double electronics note Terahertz backward wave oscillator |
| CN110491752A (en) * | 2019-07-23 | 2019-11-22 | 电子科技大学 | A kind of DIFFRACTION RADIATION OSCILLATOR of multi electron beam |
| CN113035672A (en) * | 2021-03-05 | 2021-06-25 | 电子科技大学 | Double-electron-beam expansion interaction circuit based on gap high-order mode |
| CN113889390A (en) * | 2020-07-02 | 2022-01-04 | 中国科学院空天信息创新研究院 | Double-injection plane terahertz gyrotron |
| CN114823252A (en) * | 2022-04-29 | 2022-07-29 | 电子科技大学 | Cold cathode-based bidirectional multi-beam traveling wave cascade amplifier |
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| CN105938972A (en) * | 2016-07-01 | 2016-09-14 | 中国科学技术大学 | Double-electron-beam double-grating based terahertz free electron laser source |
| CN105938972B (en) * | 2016-07-01 | 2019-04-26 | 中国科学技术大学 | A kind of Terahertz free-electron laser source based on bielectron note double grating |
| CN106935456A (en) * | 2017-04-25 | 2017-07-07 | 中国电子科技集团公司第十二研究所 | A kind of helix TWT based on segmentation tandem slow wave system |
| CN106935456B (en) * | 2017-04-25 | 2019-01-15 | 中国电子科技集团公司第十二研究所 | A kind of helix TWT based on segmentation tandem slow wave system |
| CN109599316A (en) * | 2017-09-30 | 2019-04-09 | 中国人民解放军国防科技大学 | X-waveband high-gain high-efficiency triaxial relativistic klystron amplifier |
| CN108335958A (en) * | 2018-02-07 | 2018-07-27 | 电子科技大学 | A kind of double note slow-wave structures of winding waveguide of photonic crystal load |
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| CN110416041A (en) * | 2019-06-21 | 2019-11-05 | 中国科学院电子学研究所 | A kind of Embedded Double electronics note Terahertz backward wave oscillator |
| CN110416041B (en) * | 2019-06-21 | 2020-11-20 | 中国科学院电子学研究所 | Embedded double-electron-beam terahertz backward wave oscillator |
| CN110491752A (en) * | 2019-07-23 | 2019-11-22 | 电子科技大学 | A kind of DIFFRACTION RADIATION OSCILLATOR of multi electron beam |
| CN110491752B (en) * | 2019-07-23 | 2021-01-26 | 电子科技大学 | Multi-electron-beam diffraction radiation oscillator |
| CN113889390A (en) * | 2020-07-02 | 2022-01-04 | 中国科学院空天信息创新研究院 | Double-injection plane terahertz gyrotron |
| CN113035672A (en) * | 2021-03-05 | 2021-06-25 | 电子科技大学 | Double-electron-beam expansion interaction circuit based on gap high-order mode |
| CN114823252A (en) * | 2022-04-29 | 2022-07-29 | 电子科技大学 | Cold cathode-based bidirectional multi-beam traveling wave cascade amplifier |
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