CN105319400B - Vertical probe carb and its process - Google Patents
Vertical probe carb and its process Download PDFInfo
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- CN105319400B CN105319400B CN201410365751.3A CN201410365751A CN105319400B CN 105319400 B CN105319400 B CN 105319400B CN 201410365751 A CN201410365751 A CN 201410365751A CN 105319400 B CN105319400 B CN 105319400B
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Abstract
The invention discloses a kind of vertical probe carb and its process.The vertical probe carb includes a substrate, a top substrate, a Wiring module, multiple first conducting polymer contacts, multiple second conducting polymer contacts, one first anisotropy conductive film, and one second anisotropy conductive film.Wiring module is arranged between substrate and top substrate.First conducting polymer contact, is the engagement pad relative to Wiring module, is arranged on the lower surface of substrate.Second conducting polymer contact, is the engagement pad relative to Wiring module, is arranged on the upper surface of top substrate.The configuration of first conducting polymer contact, different from the configuration of the second conducting polymer contact.First anisotropy conductive film is arranged between substrate and Wiring module, and substrate is electrical connected with Wiring module.Second anisotropy conductive film is arranged between Wiring module and top substrate, and Wiring module is connected with top electrical property of substrate.
Description
Technical field
The present invention is on a kind of vertical probe carb, and its process.
Background technology
Integrated circuit on chip after finalization of the manufacture, can be tested, to by defective products (Bad Die) before packaging
Rejecting is given, avoids bad chip from entering encapsulation, causes unnecessary cost to increase.
Usual chip to be measured, is in 80~150 DEG C of hot environment, and (thermal coefficient of expansion (CTE) is 12 inch silicon wafers
Exemplified by 2.8ppm/K), to outer most edge at center wafer, just there is the lateral expansion amount of 23~44 (μm), and with FR-4 materials (CTE
For 18ppm/K) it is pin measuring card made by base material, have the lateral expansion amount of 150~283 (μm).This temperature effect can be serious
Influence pin measuring card probe, the alignment precision with chip aluminium pad (Al pad) to be measured.
In addition, the probe of existing pin measuring card, using hard metal material, easy scratch chip bonding pads to be measured (Pads),
Or the metal level positioned at underbump.
The content of the invention
In view of above mentioned problem, all embodiments of this patent, new vertical probe carb, and its process are disclosed respectively.
The vertical probe carb of one embodiment of the invention, include a substrate, a top substrate, a Wiring module, Duo Ge
One conducting polymer contact, multiple second conducting polymer contacts, one first anisotropy conductive film, and one second anisotropy are led
Conductive film.Wiring module is arranged on substrate, between the substrate of top.Multiple first conducting polymer contacts are arranged on substrate
Lower surface, the engagement pad being respectively connecting to below Wiring module opposing channel.Multiple second conducting polymer contacts are arranged on top
The upper surface of substrate, the wherein engagement pad being respectively connecting to above Wiring module opposing channel, those first conducting polymers connect
The layout of point, different from the configuration of those the second conducting polymer contacts.Wiring module makes each first conducting polymer contact, electricity
Property be connected in corresponding to the second conducting polymer contact.First anisotropy conductive film, be arranged on substrate and Wiring module it
Between, and substrate is electrical connected with Wiring module.Second anisotropy conductive film, be arranged on Wiring module with top substrate it
Between, and Wiring module is connected with top electrical property of substrate.
In at least some embodiments, substrate, Wiring module or top substrate, include silicon, or quartz, or glass, or pottery
Porcelain.
In at least some embodiments, Wiring module includes multiple vertically through silicon, or quartz, or glass, or ceramic base
The passage of plate.
In at least some embodiments, respectively copper is included vertically through silicon, or quartz, or glass, or the passage of ceramics.
In at least some embodiments, top substrate includes a chip.In at least some embodiments, chip includes at least one
Cutting.
In at least some embodiments, the thickness of Wiring module, between 50 to 100 μm (but the present invention is not with this
It is limited).
In at least some embodiments, vertical probe carb also includes an impedance matching circuit, is couple to least a portion of be somebody's turn to do
A little second conducting polymer contacts.In at least some embodiments, impedance matching circuit can include：Such as high input impedance/low defeated
Go out the source electrode following device of impedance, or operational amplification circuit, or magnifier (but the present invention is not limited thereto).
The process of the vertical probe carb of one embodiment of the invention, comprising：One first anisotropy conductive film is set
Put in the upper surface of a substrate；One Wiring module is arranged on to the upper surface of the first anisotropy conductive film；Heating pressurization
In the substrate, the first anisotropy conductive film and the Wiring module, combine three；One second anisotropy is led
Conductive film is arranged on the upper surface of the Wiring module；One top substrate is arranged on to the upper surface of the second anisotropy conductive film；
Stress on the substrate, the first anisotropy conductive film, the Wiring module, the second anisotropy conductive film and the top
Substrate, combine it；And led respectively at the lower surface of the substrate and the upper surface of the top substrate, sprayed coating or coating
Electric high polymer material.In at least some embodiments, process is contained on the top substrate and forms impedance matching circuit.
The vertical probe carb advantage of the embodiment of the present invention, it is because having the first (or second) anisotropy conductive film and the
The buoyancy effect of one (or second) conducting polymer contact, therefore scratch chip bonding pads to be measured can be avoided, or chip underbump
The surface of metal level, and absorbable probe or the weld pad of wafer surface to be measured or chip to be measured, in vertical direction may
There is uneven effect, and still keep electrically conducting for each contact point；Or when can reduce environment temperature change, caused strain
And the damage effect such as stress.
Brief description of the drawings
Fig. 1 is the upper schematic diagram of the vertical probe carb of one embodiment of the invention.
Fig. 2 is the sectional view along Fig. 1 face lines 1000-1000.
Fig. 3 is the schematic cross-sectional view of the vertical probe carb of another embodiment of the present invention.
Fig. 4 is the upper schematic diagram of wafer scale (Wafer Level) vertical probe carb of another embodiment of the present invention.
Fig. 5 is the upper schematic diagram of the wafer-level vertical formula probe card of another embodiment of the present invention.
Fig. 6 is the upper schematic diagram of the wafer-level vertical formula probe card of another embodiment of the present invention.
Fig. 7 A to 7D are the sectional view that each layer of one embodiment of the invention decomposes, and it illustrates a kind of technique of vertical probe carb
The step of method.
Wherein, description of reference numerals is as follows：
1st, 1a, 1b, 1c vertical probe carb
The internal conductive paths of 10 Wiring module upper or lower surfaces
11 substrates
12 first anisotropy conductive films
13 Wiring modules
14 second anisotropy conductive films
15 top substrates
16 the first conducting polymer contacts being connected with base board channel lower contact pad
17 the second conducting polymer contacts being connected with top substrate channel upper contact pad
36 impedance matching circuits
There is the conductive particle that engagement pad is expressed to by or below in 101 anisotropy conductive films
111 vertically through substrate passage
The welded gasket of 112 substrate lower surface interface channels and the first conducting polymer contact
The welded gasket of 113 substrate upper surface interface channels and anisotropy conductive particle
The conductive particle that engagement pad is expressed to not by or below in 121 anisotropy conductive films
131 Wiring modules vertically through passage
The welded gasket of 132 Wiring module lower surface interface channels and anisotropy conductive particle
The welded gasket of 133 Wiring module upper surface interface channels and anisotropy conductive particle
The internal conductive paths of 134 Wiring module upper or lower surfaces
There is the conductive particle that engagement pad is expressed to by or below in 141 anisotropy conductive films
151 vertically through the passage for pushing up substrate
The welded gasket of 152 top base lower surface interface channels and anisotropy conductive particle
The welded gasket of 153 top upper surface of base plate interface channels and the second conducting polymer contact
154 cuttings
Embodiment
Shown in reference picture 1 and Fig. 2, the vertical probe carb 1 of an at least embodiment includes：One substrate 11, one first is different
Tropism conductive film 12, a Wiring module (Interposer) 13, one second anisotropy conductive film 14, one top substrate 15, more
Individual first conducting polymer contact (Conductive Polymer Contacts) 16, and multiple second conducting polymer contacts
17.Substrate 11, the first anisotropy conductive film 12, Wiring module 13, the second anisotropy conductive film 14 and top substrate 15, it is
Stack and form in vertical direction.Multiple first conducting polymer contacts 16 and multiple second conducting polymer contacts 17, respectively
The upper and lower surface of vertical probe carb 1 is arranged at, thereby allows vertical probe carb 1, can electrically, connecting test board
With chip to be measured or chip, or display pannel (but the present invention is not limited thereto).Substrate 11, Wiring module 13 and top base
Circuit in the modules such as plate 15, the first anisotropy conductive film 12 and the second anisotropy conductive film 14 can be coordinated, in distribution mould
The upper or lower surface of block 13, internal conductive paths 10 are formed, make each first conducting polymer contact 16, can be electrically connected at least one
Corresponding second conducting polymer contact 17.The configuration of multiple first conducting polymer contacts 16, it is conductive different from multiple second
The configuration of macromolecule contact 17.To be different configurations in response to both, at least part of first conducting polymer contact 16, and its it is right
Between the second conducting polymer contact 17 answered, it can be done horizontal-extending with progress with the internal conductive paths 10 on Wiring module 13
Pairing connection.
Shown in reference picture 1 and Fig. 2, Wiring module 13 is arranged between substrate 11 and top substrate 15.Multiple first is conductive
Macromolecule contact 16 is arranged on the lower surface of substrate 11 relative to Wiring module 13.Multiple second conducting polymer contacts 17
Relative to Wiring module 13, the upper surface for pushing up substrate 15 is arranged on.Wiring module 13 can make at least portion in vertical probe carb 1
Point interior layout conductive path 10 (or 134) is allowed and the first conducting polymer contact 16 and its corresponding second led horizontal-extending
Electric macromolecule contact 17 is electrical connected.First anisotropy conductive film 12 is arranged between substrate 11 and Wiring module 13, and
Make between substrate 11 and Wiring module (Interposer) 13, led in the position that there is engagement pad over and under part simultaneously
It is logical.Second anisotropy conductive film 14 is arranged between Wiring module 13 and top substrate 15, and makes Wiring module 13 and top substrate
Between 15, the position for having engagement pad over and under simultaneously in part turns on.
Shown in reference picture 1 and Fig. 2, formed with multiple vertically through passage (Through Hole) 111 on substrate 11
(but the present invention is not limited thereto).It is multiple vertically through passage 111 run through substrate 11.Multiple shapes of welded gasket 112 and 113
Into the opposed bottom face in substrate 11 and upper surface, and passage 111 corresponding to being electrically connected with.Multiple first conducting polymers connect
The corresponding multiple passages 111 of point 16.Multiple first conducting polymer contacts 16 are correspondingly formed the welded gasket in position on the lower surface
112.Multiple first conducting polymer contacts 16 are correspondingly arranged in the welded gasket on element under test, or are correspondingly arranged in member to be measured
Underbump metallization layer (Under-Bumped-Metal, abbreviation UBM) on part.In certain embodiments, multiple Hes of welded gasket 112
Multiple welded gaskets 113 are alignment in vertical direction.In certain embodiments, the corresponding welded gasket 113 of part welded gasket 112
Non-alignment in vertical direction.In addition, in certain embodiments, substrate 11 includes silicon.In certain embodiments, substrate 11
Include quartz.In certain embodiments, substrate 11 includes glass.In certain embodiments, substrate 11 includes ceramics.One
In a little embodiments, passage 111 includes copper.Due to the first (or second) anisotropy conductive film 12 (or 14), and first (or
Two) conducting polymer contact 16 (or 17) is more flexible, therefore in test, gold under the weld pad or projection on element under test
It is not easily damaged to belong to layer.
Shown in reference picture 1 and Fig. 2, Wiring module 13 includes：Multiple passages 131, position are more the lower surface of Wiring module 13
Individual welded gasket 132, position are in multiple welded gaskets 133 of the upper surface of Wiring module 13, an and at least wire 134.Multiple passages 131 are right
Answer multiple welded gaskets 132.The corresponding multiple connection pads 133 of multiple passages 131.Each passage 131 is electrically connected with corresponding welded gasket 132,
With corresponding welded gasket 133.In certain embodiments, an at least passage 131, to extend on the upper surface of Wiring module 13
One wire 134, welded gasket 133 corresponding to connection.In certain embodiments, at least a passage 131 is with Wiring module 13
The wire 134 extended on surface, welded gasket 132 corresponding to connection.In certain embodiments, Wiring module 13 includes silicon.
In some embodiments, Wiring module 13 includes quartz.In certain embodiments, Wiring module 13 includes glass.In some implementations
In example, Wiring module 13 includes ceramics.In certain embodiments, passage 131 includes copper.In certain embodiments, Wiring module
13 thickness between 50 to 100 microns (μm) (but the present invention is not limited thereto).
Shown in reference picture 1 and Fig. 2, the first anisotropy conductive film 12 includes multiple conductive particles 121.Multiple welded gaskets
Multiple welded gaskets 113 on 132 corresponding substrates 11 are set.When pressurized, heated is for a period of time in substrate 11, the first anisotropy
After conductive film 12, and the combination of the grade three of Wiring module 13, between each welded gasket 132 and corresponding welded gasket 113, meeting
There is at least one extruded conductive particle 101 so that each connection pad 132 and corresponding connection pad 113 are electrical connected.In some realities
Apply in example, the deformation rate for the conductive particle 101 that is squeezed between each welded gasket 132 and corresponding welded gasket 113, between 20%~
Between 80% (but the present invention is not limited thereto), to obtain good Elastic Contact, when hot operation, still it can reach
Good electric connection.
Shown in reference picture 1 and Fig. 2, top substrate 15 include multiple passages 151, the welded gasket 152 for corresponding to those passages 151 and
The welded gasket 153 of those corresponding passages 151, wherein each passage 151 is electrically connected with corresponding welded gasket 152 and corresponding welded gasket
153.In certain embodiments, multiple welded gaskets 152 and multiple welded gaskets 153, it is alignment in vertical direction.In some implementations
In example, the welded gasket 152 of part and corresponding welded gasket 153, do not line up in vertical direction.In some embodiments
In, top substrate 15 includes silicon.In certain embodiments, push up substrate 15 and include quartz.In certain embodiments, top substrate 15 includes
Glass.In certain embodiments, push up substrate 15 and include ceramics.In certain embodiments, passage 151 includes copper.
The welded gasket 133 of Wiring module 13, it is to be correspondingly arranged in position in the top lower surface of substrate 15 shown in reference picture 1 and Fig. 2
Welded gasket 152.Second anisotropy conductive film 14 includes multiple conductive particles 141.Each welded gasket 133 and corresponding welded gasket
152, it is electrical connected by least one extruded conductive particle 141.In certain embodiments, be squeezed conductive particle 141
Deformation rate, between 20%~80% (but the present invention is not limited thereto), to obtain good Elastic Contact, even in height
During temperature work, good electric connection still can reach.
The setting of multiple welded gaskets 153 on the substrate 15 of top, it is on corresponding tester table shown in reference picture 1 and Fig. 2
Contact.Multiple second conducting polymer contacts 17, set respectively and correspondingly in multiple welded gaskets 153 of top substrate 15 so that more
Individual second conducting polymer contact 17, can correspond to the contact on engaged test board.
Shown in reference picture 4, in certain embodiments, top substrate 15 includes a chip (or display pannel).It is real one
Apply in example, chip (or display pannel) there can be an at least cutting 154.Cutting 154 can be used for alignment spliced distribution module
13 are used.
In certain embodiments, vertical probe carb 1 pushes up the upper surface of substrate 15, or the lower surface of substrate 11, placement
Single or multiple impedance matching circuit 36 (Impedance Match Circuit).Impedance matching circuit as tester table, with
Between vertical probe carb 1, impedance is used when having mismatch.Impedance matching circuit 36 may be coupled to least a portion of single or multiple
Second conducting polymer contact 17.In certain embodiments, impedance matching circuit 36 includes：High input impedance/low output impedance
Penetrate with amplifier (Emitter Follower), or voltage follower device (Voltage Follower), or source electrode following device
(Source Follower), or operational amplification circuit (Operational Amplifier), or instrument amplifier
(Instrumentation Amolifier).In certain embodiments, push up substrate or substrate (15 or 11) be chip (or
Display pannel), and impedance matching circuit 36 can be placed in upper (under the or) surface of top (or bottom) substrate 15 (or 11).
Shown in reference picture 3, in further embodiments, vertical probe carb 1a is included：Substrate 11, multiple Wiring modules
(13a to 13c), multiple anisotropy conductive films 31, top substrate 15, multiple first conducting polymer contacts 16, and multiple second
Conducting polymer contact 17.Substrate 11, multiple Wiring modules (13a to 13c), multiple anisotropy conductive films 31 and top substrate
15, it is to stack in vertical direction.Substrate 15 is pushed up with substrate 11 respectively in outermost.Multiple first conducting polymer contacts
16, it is arranged on the lower surface of substrate 11.Multiple second conducting polymer contacts 17, it is arranged on the upper surface of top substrate 15.Respectively
Anisotropy conductive film 31, include multiple conductive particles.Substrate 11 and Wiring module 13a, with an anisotropy conductive film 31
Mutually fix and be mutually electrically connected with.Wiring module 13a and Wiring module 13b, fixed with the phase of an anisotropy conductive film 31 and mutually electric
Property connection.Wiring module 13b and Wiring module 13c, is fixed with the phase of an anisotropy conductive film 31 and is mutually electrically connected with.Distribution mould
Block 13c and top substrate 15, are fixed with the phase of an anisotropy conductive film 31 and are mutually electrically connected with.Multiple first conducting polymer contacts
16 with multiple second conducting polymer contacts 17, there is different layout to configure.In substrate 11, multiple Wiring modules, (13a is extremely
13c), in multiple anisotropy conductive films 31 and top substrate 15, multiple first conducting polymer contacts 16 and multiple are connected respectively
The internal conductive paths 10 and 134 of second conducting polymer contact 17, mainly do level on Wiring module (13a to 13c)
Extension.In certain embodiments, internal conductive paths part can do water in substrate 11, and the upper or lower surface of top substrate 15
Flat extension.
Shown in reference picture 5 and Fig. 6, vertical probe carb 1b multiple second conducting polymer contacts 17, it can be formed multigroup
2.Accordingly, multiple first conducting polymer contacts 16, can be formed multigroup.First conducting polymer contact 16 and second of each group
Conducting polymer contact 17, for detecting an element under test.In certain embodiments, the first multigroup conducting polymer contact 16
With the second multigroup conducting polymer contact 17, it is arranged in a row, as shown in Figure 5.In certain embodiments, vertical probe carb
1c the first multigroup conducting polymer contact 16, with the second multigroup conducting polymer contact 17, is arranged in several rows.At some
In embodiment, the first multigroup conducting polymer contact 16, or the second multigroup conducting polymer contact 17, share an anisotropy
Conductive film.In certain embodiments, the first conducting polymer contact 16 of each group, or the second conducting polymer contact of each group
17, respectively using single anisotropy conductive film.In certain embodiments, the first multigroup conducting polymer contact 16, or it is more
Second conducting polymer contact 17 of group, share a Wiring module.In certain embodiments, the first conducting polymer of each group connects
Point 16, or the second conducting polymer contact 17 of each group, respectively using single Wiring module.
The embodiment of the present invention discloses a kind of process of vertical probe carb.Shown in reference picture 7A, on a base material 71
Photoresistance (Photo Resist) is coated with, is then dried.With first piece of light shield (Mask) and gold-tinted technique (Photolithography
Process), the formation perforate of upper and lower perforation (Through Hole) place is being formed.Then use existing deep formula ion(ic) etching
(Deep Reactive Ion Etch, DRIE), or inductance type electric paste etching (Inductive-Coupled Plasma, ICP),
Or the technique such as Bosch deep reactive ion etch, etch the hole 73 of 50-100 μm of (present invention is not limited thereto) depth.Secondly
Photoresistance is removed.Again with second piece of light shield (Mask) and gold-tinted technique (Photolithography Process), exposing to plate
The part of copper.Sputtering machine (Sputter) is finally used, plates last layer copper atom, the kind crystal layer (Seed as follow-up electro-coppering
Layer)72.In certain embodiments, base material 71 includes silicon (Silicon), or quartzy (Quartz), or glass, or ceramics.
In some embodiments, photoresistance includes SU-8.Shown in reference picture 7B, the then electro-coppering on base material 71, hole 73 is filled up and in table
The layers of copper 74 of 10-50 μm (present invention is not limited thereto) is formed on face, then removes photoresistance.
Shown in reference picture 7C, with chemical and mechanical grinding method (Chemical Mechanical Polishing, CMP)
The back side of base material 71 is ground, until the copper in hole 73 exposes.
Another process is to take a substrate 71, and its thickness is about slightly less than twice of (such as 100- of each deep etch depth
200 μm (present invention is not limited thereto)), 0028 same technique can be used, the hole of 50-100 μm of depth is first gone out in front-side etch
Hole.Then directly at the back side of the hole of counterpart substrate 71, then another secondary 50-100 μm of deep etch process is carried out, until upper and lower
Hole (depth such as 100-200 μm) is completely through untill.Thus go to grind base material without 0029 chemical and mechanical grinding method
71 back side, until the copper in hole 73 exposes.This practice can save baseplate material, and needed for related abrasion technique etc.
Material.
Shown in reference picture 7D, last layer photoresistance is applied at the back side of base material 71, with the 3rd piece of light shield and gold-tinted technique, is exposed
Will be with copper-plated part on the back side of base material 71.Sputtering machine is used again, plates last layer copper atom, the kind as follow-up electro-coppering
Crystal layer (Seed Layer).Finally with the layers of copper 75 of galvanoplastic plating one (thickness is 1-30 μm) (present invention not as
Limit), so far complete a Wiring module, substrate or top substrate.
Shown in reference picture 2, Wiring module 13 is placed on substrate 11, centre folder is with anisotropy conductive film 12.So
Afterwards, pressurized, heated for a period of time, makes conductive particle deform 20%~80% (present invention is not limited thereto).Then substrate will be pushed up
15 are placed on Wiring module 13, and centre folder is with anisotropy conductive film 14.Afterwards, pressurized, heated for a period of time, makes conductive particle
Deformation 20%~80%.
The lower surface of substrate 11 and the upper surface of top substrate 15 are gold-plated, to prevent the oxidation of layers of copper, and lift follow-up weldering
Connect the wetability (Wetability) of technique.Then, with ink-jet (or piezoelectricity) formula ink-jet table printing machine, sprayed coating conducting polymer material
Material, or with wire mark mode (Screen Printing) applying conductive high polymer material, the welded gasket 112 in the lower section of substrate 11,
Then baking makes its solidification, the elastic contact 16 as contact measured chip (or display pannel).Similarly, on the substrate 15 of top
The welded gasket 153 of side, sprayed coating conducting polymer composite, or with wire mark mode (Screen Printing) applying conductive macromolecule
Material, on welded gasket 153, then baking makes its solidification, the elastic contact 17 as engaged test board.
In at least some embodiments, vertical probe carb is very high with insulating properties that thermal coefficient of expansion is again very small, heat
Conduction effect also good silicon wafer (Silicon), or quartzy (Quartz), or glass, or ceramics are base material, therefore can reduce
Chip (or display pannel) it is burned test (Burn-In Test) when, the influence of temperature lateral expansion effect.At least some
In embodiment, by conducting polymer probe, the rectilinear benefit for being placed in the upper and lower surface of base material is adopted：First, scratch can be avoided to treat
The weld pad (Pads) surveyed on chip (or display pannel), or Underbump metallization layer (Under-Bumped-Metal, referred to as
UBM surface), therefore do not interfere with the follow-up structure dress technique such as long projection (Bumps) or routing of crystal grain (or display pannel)；Second,
Good contact can be kept with tester table.In at least some embodiments, between the Wiring module of vertical probe carb, or match somebody with somebody
Between wire module and top/substrate, be with flexible anisotropy conductive film (Anisotropic Conductive Film,
ACF interlayer) is used as, its absorbable probe or chip to be measured (or display pannel) surface or chip to be measured (or display face
Plate) weld pad, may have uneven effect in vertical direction, or when environment temperature changes, caused strain and stress.
During chip (or display pannel) to be measured test, can direct weighting in vertical probe card backside, pass through conducting polymer probe
And the double elastic layer of anisotropy conductive film, by force distribution to every probe, contact measured chip (or display face
Plate) aluminium pad on surface, or the alloy bump above it is covered, keep good ohmic contact (Ohmic Contact).Therefore
This structure can be used for electrical testing (the Wafer Level of more formula crystal grain and the pin measuring card of wafer scale (or display pannel)
Chip Probing Test), and burn-in testing (Burn-In Test) use.Another aspect vertical probe carb uses vertical
The passage of insertion, signaling path can be shortened, be adapted to high-frequency test and high density, more formula crystal grain of thin space, with chip
The test request trend of level (or display pannel).
The technology contents and technical characterstic of the present invention have revealed that as above, but those skilled in the art are still potentially based on this hair
Bright teaching and announcement and make a variety of replacements and modification without departing substantially from spirit of the present invention.Therefore, protection scope of the present invention should not
It is limited to implement example those disclosed herein, and various replacements and modification without departing substantially from the present invention should be included, and is right institute
Cover.
Claims (11)
1. a kind of vertical probe carb, comprising：
One substrate；
One top substrate；
One Wiring module, it is arranged between the substrate and the top substrate；
Multiple first conducting polymer contacts, are arranged on the substrate relative to the Wiring module；
Multiple second conducting polymer contacts, it is arranged on relative to the Wiring module on the top substrate, wherein the plurality of first leads
Electric macromolecule contact is different from the configuration of the plurality of second conducting polymer contact, and the Wiring module makes respectively first conduction
Macromolecule contact is electrical connected with the corresponding second conducting polymer contact；
One first anisotropy conductive film, is arranged between the substrate and the Wiring module, and makes the substrate and the distribution
Module is electrical connected；And
One second anisotropy conductive film, it is arranged between the Wiring module and the top substrate, and makes the Wiring module and the top
Electrical property of substrate is connected.
2. vertical probe carb according to claim 1, the wherein substrate, the Wiring module, or the top substrate, comprising
Silicon, or quartz, or glass, or ceramics.
3. vertical probe carb according to claim 1, the wherein Wiring module include it is multiple vertically through passage.
4. vertical probe carb according to claim 3, wherein respectively should vertically through passage include copper.
5. vertical probe carb according to claim 1, wherein the top substrate or substrate, include a chip or display
Panel.
6. vertical probe carb according to claim 5, the wherein chip or display pannel include an at least cutting.
7. the thickness of vertical probe carb according to claim 1, the wherein Wiring module is between 50 to 200 μm.
8. vertical probe carb according to claim 1, an at least impedance matching circuit is also included, wherein at least one resistance
Anti- match circuit is placed in the upper surface of the top substrate or the lower surface of substrate, and it is more that an at least impedance matching circuit couples this
One of individual second conducting polymer contact.
9. vertical probe carb according to claim 8, the wherein impedance matching circuit include high input impedance/low output
Impedance is penetrated with amplifier, or voltage follower device, or source electrode following device, or operational amplification circuit, or instrument amplifier.
10. a kind of process of vertical probe carb, comprising：
One first anisotropy conductive film is arranged on a substrate；
One Wiring module is arranged on the first anisotropy conductive film；
The substrate, the first anisotropy conductive film are stressed on, with the Wiring module, combines three；
One second anisotropy conductive film is arranged on the Wiring module；
One top substrate is arranged on the second anisotropy conductive film；
The substrate, the first anisotropy conductive film, the Wiring module, the second anisotropy conductive film are stressed on,
With the top substrate, five are made to combine；And
Sprayed coating or applying conductive high polymer material respectively, in the lower surface of the substrate and the upper surface of the top substrate.
11. process according to claim 10, also it is contained in the upper surface of the top substrate, or the following table of the substrate
Face first disposes impedance matching circuit, then sprayed coating or the conducting polymer composite is coated with respectively again, in the following table of the substrate
Face and the upper surface of the top substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410365751.3A CN105319400B (en) | 2014-07-29 | 2014-07-29 | Vertical probe carb and its process |
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| CN201410365751.3A CN105319400B (en) | 2014-07-29 | 2014-07-29 | Vertical probe carb and its process |
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| CN105319400A CN105319400A (en) | 2016-02-10 |
| CN105319400B true CN105319400B (en) | 2018-03-23 |
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| JP5426494B2 (en) * | 2010-07-20 | 2014-02-26 | 日本電子材料株式会社 | Probe card manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1912634A (en) * | 2005-08-10 | 2007-02-14 | 采钰科技股份有限公司 | Vertical probe card |
| CN101526553A (en) * | 2008-03-07 | 2009-09-09 | 旺矽科技股份有限公司 | Probe card |
| CN201302583Y (en) * | 2008-10-28 | 2009-09-02 | 旺矽科技股份有限公司 | Vertical probe card provided with reinforcing device |
| CN103091520A (en) * | 2011-11-07 | 2013-05-08 | 日本麦可罗尼克斯股份有限公司 | Probe block, probe card and probe apparatus both having the probe block |
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| CN105319400A (en) | 2016-02-10 |
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