CN105304719B - Flexible thin film transistor and method of manufacturing the same - Google Patents
Flexible thin film transistor and method of manufacturing the same Download PDFInfo
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- CN105304719B CN105304719B CN201410345617.7A CN201410345617A CN105304719B CN 105304719 B CN105304719 B CN 105304719B CN 201410345617 A CN201410345617 A CN 201410345617A CN 105304719 B CN105304719 B CN 105304719B
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Abstract
The present invention provides a flexible thin film transistor and a method of manufacturing the same, the flexible thin film transistor including: a flexible substrate; the grid is arranged on the flexible substrate; an inorganic insulating layer disposed on the gate electrode; an organic conductive layer disposed on the inorganic insulating layer; and a source/drain electrode disposed on the organic conductive layer. The flexible thin film transistor can enhance the protection capability of the inorganic insulating layer, the organic conducting layer can effectively play a role in buffering, abnormal conduction between the grid electrode and the source/drain electrode is avoided, the short circuit problem is improved, and therefore the stability of the flexible thin film transistor is improved.
Description
Technical Field
The present disclosure relates to thin film transistors, and particularly to a flexible thin film transistor and a method for fabricating the same.
Background
The TFT-LCD is widely used in various large, medium and small-sized products due to its advantages of thin size, light weight, excellent picture quality, low power consumption, long life, digitalization and no radiation, and almost covers the major electronic products of the current information society, such as televisions, computers (desktop and notebook), mobile phones, PDAs, GPS, vehicle-mounted displays, instruments, public displays and illusion displays. Due to the large amount of manpower, material resources and financial resources invested in the world, huge market scale is formed at present.
The thin film transistor is formed by depositing a layer of semiconductor film on a substrate, manufacturing a source electrode, a drain electrode, a grid electrode and a tube body by technologies such as photoetching and etching, and the thin film transistor consists of a grid insulating layer, an active layer, the grid electrode and the source/drain electrode, wherein the grid insulating layer is usually an inorganic insulating layer and is arranged between the grid electrode and the source/drain electrode. The flexible thin film transistor is a thin film transistor using a flexible substrate, which is bent, deformed, and rolled into a cylinder having a diameter of several centimeters without affecting and deteriorating display performance thereof. The flexible thin film transistor has a wide range of applications, such as mobile phones, notebook computers, electronic books, automobile instruments, electronic posters, personal digital assistants, RF identification systems, and sensors.
In the existing flexible thin film transistor, the flexible substrate such as a polyimide substrate is soft in texture, and after the array manufacturing treatment, the inorganic insulating layer is easily damaged by external mechanical pressure such as probe scratching, finger pressing and the like, so that abnormal conduction between the grid and the source/drain electrode and even a short circuit problem occur, and the stability of the flexible thin film transistor is affected.
Disclosure of Invention
Aiming at the defects of the existing flexible thin film transistor, through long-term deep research, the inventor adds an organic conducting layer on the existing inorganic insulating layer to play an effective buffering role, thereby increasing the protective capability of the insulating layer and reducing the risk of damage of the inorganic insulating layer caused by external pressure.
In one aspect, the present invention provides a flexible thin film transistor, including:
a flexible substrate;
the grid is arranged on the flexible substrate;
an inorganic insulating layer disposed on the gate electrode;
an organic conductive layer disposed on the inorganic insulating layer; and
and a source/drain electrode disposed on the organic conductive layer.
In one embodiment of the flexible thin film transistor of the present invention, the gate electrode includes at least one material selected from the group consisting of aluminum, yttrium, zinc, hafnium, tantalum, titanium, chromium, and alloys thereof.
In another embodiment of the flexible thin film transistor of the present invention, the inorganic insulating layer includes at least one material selected from the group consisting of a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer.
In another embodiment of the flexible thin film transistor of the present invention, the organic conductive layer is a polymer conductive layer or a nano silver wire glue material.
In another embodiment of the flexible thin film transistor of the present invention, the organic conductive layer has a thickness of
。
In another embodiment of the flexible thin film transistor of the present invention, the flexible thin film transistor further comprises an active semiconductor layer disposed between the inorganic insulating layer and the organic conductive layer.
In another aspect, the present invention further provides a method for manufacturing a flexible thin film transistor, including the steps of:
providing a flexible substrate;
forming a gate electrode on the flexible substrate;
forming an inorganic insulating layer on the gate electrode;
forming an organic conductive layer on the inorganic insulating layer; and
and forming source/drain electrodes on the organic conductive layer.
In one embodiment of the method of manufacturing of the present invention, the step of forming the inorganic insulating layer further includes forming an active semiconductor layer on the inorganic insulating layer.
In another embodiment of the manufacturing method of the present invention, the organic conductive layer is formed using a first mask, and the source/drain electrodes are formed using a second mask, the first mask and the second mask having the same pattern.
In still another aspect, the present invention also provides a flexible thin film transistor, including:
a flexible substrate;
the buffer layer is arranged on the flexible substrate;
the grid is arranged on the buffer layer;
an inorganic insulating layer disposed on the gate electrode;
an active semiconductor layer disposed on the inorganic insulating layer;
the etching barrier layer is arranged on the active semiconductor layer;
the organic conducting layer is arranged on the etching barrier layer;
a source/drain electrode disposed over the organic conductive layer;
the passivation layer is arranged on the etching barrier layer and covers the source/drain electrode;
an organic planarization layer disposed on the passivation layer;
the reflecting layer is arranged on the organic flat layer and is connected with the source/drain electrode through a contact hole; and
and the pixel defining layer is arranged on the organic flat layer and partially covers the reflecting layer.
In one embodiment of the flexible thin film transistor of the present invention, the gate electrode includes at least one material selected from the group consisting of aluminum, yttrium, zinc, hafnium, tantalum, titanium, chromium, and alloys thereof.
In another embodiment of the flexible thin film transistor of the present invention, the inorganic insulating layer includes at least one material selected from the group consisting of a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer.
In another embodiment of the flexible thin film transistor of the present invention, the organic conductive layer is a polymer conductive layer or a nano silver wire glue material.
In another embodiment of the flexible thin film transistor of the present invention, the organic conductive layer has a thickness of
。
In another embodiment of the flexible thin film transistor of the present invention, the source/drain electrodes and the organic conductive layer have the same shape.
The flexible thin film transistor can enhance the protection capability of the inorganic insulating layer, the organic conducting layer can effectively play a role in buffering, abnormal conduction between the grid electrode and the source/drain electrode is avoided, the short circuit problem is improved, and therefore the stability of the flexible thin film transistor is improved.
Drawings
FIG. 1 is a schematic structural diagram of a flexible thin film transistor according to the present invention;
fig. 2 is a schematic structural diagram of a flexible thin film transistor according to an embodiment of the present invention.
Wherein the reference numerals are as follows:
101 flexible substrate 102 gate
103 inorganic insulating layer 104 organic insulating layer
105 source/drain electrodes
201 glass substrate 202 Flexible substrate
203 buffer layer 204 gate insulating layer
205 gate 206 etch stop layer
207 active semiconductor layer 208 passivation layer
209 source/drain electrode 210 organic planarization layer
211 pixel definition layer 212 reflective layer
301 organic conductive layer
Detailed Description
The technical solution of the present invention is further explained below according to specific embodiments. The scope of protection of the invention is not limited to the following examples, which are set forth for illustrative purposes only and are not intended to limit the invention in any way.
Fig. 1 is a schematic structural diagram of a flexible thin film transistor according to the present invention, and as shown in fig. 1, the flexible thin film transistor includes: a flexible substrate 101; a gate electrode 102 disposed on the flexible substrate 101; an inorganic insulating layer 103 disposed on the gate electrode 102; an organic conductive layer 104 disposed on the inorganic insulating layer 103; and a source/drain electrode 105 disposed on the organic conductive layer 104. However, the flexible thin film transistor of the present invention is not limited to the above structure, and may include other layers of a known thin film transistor such as an active semiconductor layer and the like.
Fig. 2 shows a preferred embodiment of the flexible thin film transistor of the present invention, and as shown in fig. 2, the flexible thin film transistor has a glass substrate 201 and a flexible substrate 202, and the flexible substrate 202 may be a flexible material such as plastic, preferably a polyimide substrate.
The buffer layer 203 is formed on the flexible substrate 202, and the buffer layer 203 is mainly used for isolating moisture and air, and also can optimize the surface roughness of the substrate, and by controlling the deposition conditions, the stress of the device can be optimized. The buffer layer 203 may be a buffer layer material commonly used in the art, including but not limited to a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer, and the like.
A gate electrode 205 is formed on the buffer layer 203, and the gate electrode 205 includes at least one material selected from the group consisting of aluminum, yttrium, zinc, hafnium, tantalum, titanium, chromium, and an alloy thereof, which may be one of MoW, AlNd, AlCu, AuTi, and AuCr.
A gate insulating layer 204 is formed on the gate 205, and the gate insulating layer 204 is an inorganic insulating layer including, but not limited to, silicon oxide, silicon nitride, and silicon oxynitride.
An active semiconductor layer 207 is formed on the gate insulating layer 204, and the active semiconductor layer 207 is positioned between the gate insulating layer 204 and the organic conductive layer 301 which is formed later, which may be an IGZO layer, but is not limited thereto.
An etch barrier layer 206 is formed on the active semiconductor layer 207 to protect a subsequently formed source/drain electrode 209 from moisture introduced from the outside or the substrate. Etch stop layer 206 may be a stop layer material commonly used in the art including, but not limited to, silicon oxide and silicon nitride.
Forming an organic conductive layer 301 on the etching stop layer 206, wherein the organic conductive layer 301 is a polymer conductive layer or a nano silver wire adhesive material with a thickness of
For example, is
。
Source/drain electrodes 209 are formed on the organic conductive layer 301, and the source/drain electrodes 209 may be formed of a metal including, but not limited to, chromium, titanium, copper, aluminum, molybdenum, tungsten, nickel, platinum, and the like. The source/drain electrode 209 may have the same shape as the organic conductive layer 301 and communicate with the active semiconductor layer 207 through a contact hole.
A passivation layer 208 is formed on the etch stopper 206, and the passivation layer 208 may cover the source/drain electrode 209 for protecting the source/drain electrode 209, which may be a passivation layer material commonly used in the art, including but not limited to silicon oxide and silicon nitride.
An organic planarization layer 210 is formed on the passivation layer 208, the organic planarization layer 210 can be formed by, for example, spin coating, and the material of the organic planarization layer 210 is, for example, a photoresist material or spin-on glass.
A pixel defining layer 211 is formed on the organic planarization layer 210, and a material of the pixel defining layer 211 is, for example, silicon oxide, silicon nitride, silicon oxynitride, an organic non-conductive polymer, or a combination thereof, and may be formed by a manufacturing method such as a physical vapor deposition method, a chemical vapor deposition method, and spin coating.
A reflective layer 212 is formed on the organic planarization layer 210 and communicates with the source/drain electrodes 209 through contact holes, and a pixel defining layer 211 partially covers the reflective layer 212. The reflective layer 212 is typically an ITO/metal/ITO structure, wherein the metal can be a highly reflective metal, such as Ag.
The invention also provides a method for manufacturing the flexible thin film transistor, which comprises the following steps:
providing a flexible substrate; forming a gate electrode on a flexible substrate; forming an inorganic insulating layer on the gate electrode; forming an organic conductive layer on the inorganic insulating layer; and forming source/drain electrodes on the organic conductive layer.
According to the method of the present invention, after the step of forming the inorganic insulating layer, an active semiconductor layer is further formed on the inorganic insulating layer.
According to the method, the organic conducting layer is formed by using a first mask, the source/drain electrode is formed by using a second mask, and the first mask and the second mask have the same pattern, so that the formed source/drain electrode and the organic conducting layer have the same shape, and the organic conducting layer can better protect the source/drain electrode.
In summary, the flexible thin film transistor of the present invention can enhance the protection capability of the inorganic insulating layer, the organic conductive layer can effectively play a role in buffering, prevent abnormal conduction between the gate and the source/drain electrodes, and improve the short circuit problem, thereby improving the stability of the flexible thin film transistor.
It should be noted by those skilled in the art that the described embodiments of the present invention are merely exemplary and that various other substitutions, alterations, and modifications may be made within the scope of the present invention. Accordingly, the present invention is not limited to the above-described embodiments, but is only limited by the claims.
Claims (11)
1. A flexible thin film transistor, comprising:
a flexible substrate;
the grid is arranged on the flexible substrate;
an inorganic insulating layer disposed on the gate electrode;
an organic conductive layer disposed on the inorganic insulating layer; and
a source/drain electrode disposed over the organic conductive layer;
wherein the organic conductive layer has a thickness of
The organic conducting layer is made of nano silver wire glue.
2. The flexible thin film transistor of claim 1, wherein the gate electrode comprises at least one material selected from the group consisting of aluminum, yttrium, zinc, hafnium, tantalum, titanium, chromium, and alloys thereof.
3. The flexible thin film transistor according to claim 1, wherein the inorganic insulating layer comprises at least one material selected from the group consisting of a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer.
4. The flexible thin film transistor according to any one of claims 1 to 3, wherein the flexible thin film transistor further comprises an active semiconductor layer disposed between the inorganic insulating layer and the organic conductive layer.
5. A method of manufacturing a flexible thin film transistor, comprising the steps of:
providing a flexible substrate;
forming a gate electrode on the flexible substrate;
forming an inorganic insulating layer on the gate electrode;
forming an organic conductive layer on the inorganic insulating layer; and
forming source/drain electrodes on the organic conductive layer;
wherein the organic conductive layer has a thickness of
The organic conducting layer is made of nano silver wire glue.
6. The manufacturing method according to claim 5, further comprising forming an active semiconductor layer on the inorganic insulating layer after the step of forming the inorganic insulating layer.
7. The manufacturing method according to claim 6, wherein the organic conductive layer is formed using a first mask, and the source/drain electrode is formed using a second mask, the first mask and the second mask having the same pattern.
8. A flexible thin film transistor includes
A flexible substrate;
the buffer layer is arranged on the flexible substrate;
the grid is arranged on the buffer layer;
an inorganic insulating layer disposed on the gate electrode;
an active semiconductor layer disposed on the inorganic insulating layer;
the etching barrier layer is arranged on the active semiconductor layer;
the organic conducting layer is arranged on the etching barrier layer;
a source/drain electrode disposed over the organic conductive layer;
the passivation layer is arranged on the etching barrier layer and covers the source/drain electrode;
an organic planarization layer disposed on the passivation layer;
the reflecting layer is arranged on the organic flat layer and is connected with the source/drain electrode through a contact hole; and
the pixel definition layer is arranged on the organic flat layer and partially covers the reflecting layer;
wherein the organic conductive layer has a thickness of
The organic conducting layer is made of nano silver wire glue.
9. The flexible thin film transistor of claim 8, wherein the gate electrode comprises at least one material selected from the group consisting of aluminum, yttrium, zinc, hafnium, tantalum, titanium, chromium, and alloys thereof.
10. The flexible thin film transistor according to claim 8, wherein the inorganic insulating layer comprises at least one material selected from the group consisting of a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer.
11. A flexible thin film transistor according to any one of claims 8 to 10, wherein the source/drain electrodes and the organic conductive layer are the same shape.
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| US10651312B2 (en) | 2017-05-16 | 2020-05-12 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Flexible thin film transistor and method for fabricating the same |
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| CN102655118A (en) * | 2012-01-10 | 2012-09-05 | 京东方科技集团股份有限公司 | AMOLED (active matrix/organic light-emitting diode) device and production method |
| CN103219463A (en) * | 2013-04-08 | 2013-07-24 | 上海和辉光电有限公司 | Organic electronic luminescent device and manufacturing method thereof |
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| CN102655118A (en) * | 2012-01-10 | 2012-09-05 | 京东方科技集团股份有限公司 | AMOLED (active matrix/organic light-emitting diode) device and production method |
| CN103219463A (en) * | 2013-04-08 | 2013-07-24 | 上海和辉光电有限公司 | Organic electronic luminescent device and manufacturing method thereof |
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Address after: 201506, No. nine, No. 1568, Jinshan Industrial Zone, Shanghai, Jinshan District Patentee after: Shanghai Hehui optoelectronic Co., Ltd Address before: 201500, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee before: EverDisplay Optronics (Shanghai) Ltd. |
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