CN105280541A - Temporary bonding method and bonding-removing method for ultrathin semiconductor wafer - Google Patents
Temporary bonding method and bonding-removing method for ultrathin semiconductor wafer Download PDFInfo
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- CN105280541A CN105280541A CN201510591118.0A CN201510591118A CN105280541A CN 105280541 A CN105280541 A CN 105280541A CN 201510591118 A CN201510591118 A CN 201510591118A CN 105280541 A CN105280541 A CN 105280541A
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- semiconductor wafer
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- pellet
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Abstract
The invention discloses a temporary bonding method and bonding-removing method for an ultrathin semiconductor wafer. Through the cooperative use of a first bonding agent and a first organic reagent, and a second bonding agent and a second organic reagent, the cracking rate of the ultrathin semiconductor wafer during the back side process can be effectively reduced, and the chip yield is high. High-temperature dissolved wax is not needed for the separation process of the semiconductor wafer and a carrier sheet, the problem of binding strength decreasing caused by different expansion and shrinkage coefficients between semiconductor materials and back-side metal can be prevented, the separation of the wafer and the carrier sheet is free of immersing a reagent de-bonding agent for a long time, the wafer separation efficiency is high, and the wafer can be produced in batch.
Description
Technical field
The present invention relates to a kind of interim bonding method for ultra-thin semiconductor disk and remove bonding method.
Background technology
Along with constantly riseing of semiconductor device frequency, chip thickness produces material impact to device performance.Thin chip has raising radiating efficiency, mechanical performance and electrical property, and reduce encapsulation volume, the advantages such as weight reduction, have larger market application foreground.The back process of semiconductor device generally comprises the steps such as substrate thinning, via etch, back face metalization, chip cutting-up.Because the thinning rear mechanical strength of semiconductor wafer is more weak, and easily occur curling due to the reason of stress, cause disk frangible, cannot operate; When the substrate thinning of semiconductor wafer is even more as thin as 20um to 40um, the sliver probability of disk increases progressively in geometry multiple with the thickness minimizing of semi-conducting material.
Therefore semiconductor wafer needs to attach the good carrier-pellet of mechanical strength to control sliver problem in technical process overleaf, the wafer bonding method adopted in current industry is generally applying bonding wax between two pieces of wafers, and then adopt bonder by two pieces of wafer bondings together, be rely on to carry out subsequent technique making with temporary carrier, the intensity of ultra-thin wafers can be promoted.
Wafer for above-mentioned interim bonding carries out being separated generally following two kinds of methods: the first, bonding wax when utilizing solvent to dissolve bonding from the edge of two pieces of wafers of bonding, the second adopts heating power to shear exactly and is separated.First method, lytic agent slowly dissolves bonding wax from crystal round fringes, and the time that lytic agent arrives crystal circle center is oversize, and separative efficiency is too low; Second method, when hot shears is pasted semi-conducting material and metal material coefficient of thermal expansion and contraction inconsistent, cause disk be separated after metal adhesion decline, and shear time easily damage wafer, rate of finished products is lower.
When Semiconductor substrate be thinned to 40um even thinner time, above-mentioned 2 kinds of separation methods disk be separated after disk transfer process in, there is high sliver rate, be not suitable for the production of ultra-thin chip.And disk also needs processing step such as experience cleaning, cutting-up etc. after being separated with carrier, in this technical process, cause sliver rate to be the difficult problem of industry all the time, serious obstruction ultra-thin chip is in the application of semicon industry.
Summary of the invention
Goal of the invention: the object of this invention is to provide and a kind ofly can reduce the interim bonding method for ultra-thin semiconductor disk of the sliver rate of ultra-thin semiconductor disk in technical process and remove bonding method.
Technical scheme: for reaching this object, the present invention by the following technical solutions:
Interim bonding method for ultra-thin semiconductor disk of the present invention and remove bonding method, wherein:
Described bonding method comprises the following steps:
S1: the surface of cleaning semiconductor wafer and the first carrier-pellet;
S2: by front surface coated first bonding agent of semiconductor wafer and the first carrier-pellet, and carry out heat and dry solidification;
S3: by semiconductor wafer and the first carrier-pellet vis-a-vis, by the first bonding agent bonding, forms the preliminary bonding body of semiconductor wafer and the first carrier-pellet;
S4: be immersed in the first organic reagent by the bonding body of semiconductor wafer and the first carrier-pellet, removes first bonding agent at semiconductor wafer edge, forms gap;
S5: semiconductor wafer backside coating second bonding agent obtained in step S4, the gap formed with filling step S4, and be cured, form the final bonding body of semiconductor wafer and the first carrier-pellet;
The described bonding method that goes comprises the following steps:
S6: be immersed in the second organic reagent by the final bonding body of semiconductor wafer and the first carrier-pellet, removes second bonding agent at semiconductor wafer edge, to expose gap;
S7: the semiconductor wafer obtained by step S6 is fixing on a second carrier, and Second support is placed on can applies on the platform of external force;
S8: realize being separated of semiconductor wafer and the first carrier-pellet by external force;
S9: use the semiconductor wafer that the first organic reagent cleaning step S8 obtains, removes first bonding agent on semiconductor wafer surface, obtains the semiconductor wafer after bonding.
Further, the material of described semiconductor wafer is any one in silicon, GaAs, indium phosphide or carborundum.
Further, described first carrier-pellet not with the first bonding agent, the second bonding agent generation physical-chemical reaction, and the first carrier-pellet adopts reusable material; Described first bonding agent, the second bonding agent do not react with semiconductor wafer.
Further, the size of described first carrier-pellet is larger than the size of semiconductor wafer.
Further, the model of described first bonding agent is SPACELIQUIDTR2-50482.
Further, the model of described second bonding agent is waferbondHT10.10.
Further, described first organic reagent is the special remover of the first bonding agent.
Further, described second organic reagent is the special remover of the second bonding agent.
Further, described Second support adopts smooth, can to fix semiconductor wafer material.
Beneficial effect: the interim bonding method for ultra-thin semiconductor disk provided by the invention and remove bonding method, can reduce the sliver rate of ultra-thin semiconductor disk in technical process, chip yield is high; The separation process of semiconductor wafer requires no high temperature solution wax, there is not the problem that the different adhesion caused of coefficient of thermal expansion and contraction declines between semi-conducting material from back metal; The separation process of semiconductor wafer requires no soaks lytic agent for a long time, and disk separative efficiency is high, is applicable to volume production; For ultra-thin chip establishes good Process ba-sis in the popularization of semicon industry.
Accompanying drawing explanation
Fig. 1 is the structural representation of the semiconductor wafer that step S4 of the present invention obtains;
Fig. 2 is the structural representation of the final bonding body of the semiconductor wafer that obtains of step S5 of the present invention and the first carrier-pellet;
Fig. 3 is the structural representation of final bonding body after Wafer Thinning, backside through vias and back face metalization of semiconductor wafer of the present invention and the first carrier-pellet;
Fig. 4 is the structural representation of the semiconductor wafer be fixed together and the Second support obtained in step S7 of the present invention;
Fig. 5 is the structural representation of the semiconductor wafer after the separation that obtains of step S8 of the present invention;
Fig. 6 is the structural representation of semiconductor wafer after scribing gone after bonding that step S9 of the present invention obtains.
Embodiment
Interim bonding method for ultra-thin semiconductor disk 1 provided by the invention and remove bonding method, wherein:
Bonding method comprises the following steps:
S1: the surface of cleaning semiconductor wafer 1 and the first carrier-pellet 4;
S2: by front surface coated first bonding agent 2 of semiconductor wafer 1 and the first carrier-pellet 4, and carry out heat and dry solidification;
S3: by semiconductor wafer 1 and the first carrier-pellet 4 vis-a-vis, by the first bonding agent 2 bonding, forms the preliminary bonding body of semiconductor wafer 1 and the first carrier-pellet 4;
S4: be immersed in the first organic reagent by the bonding body of semiconductor wafer 1 and the first carrier-pellet 4, removes first bonding agent 2 at semiconductor wafer 1 edge, forms gap 3;
S5: semiconductor wafer 1 backside coating second bonding agent 5 obtained in step S4, the gap 3 formed with filling step S4, and be cured, form the final bonding body of semiconductor wafer 1 and the first carrier-pellet 4;
Bonding method is gone to comprise the following steps:
S6: be immersed in the second organic reagent by the final bonding body of semiconductor wafer 1 and the first carrier-pellet 4, removes second bonding agent 5 at semiconductor wafer 1 edge, to expose gap 3;
S7: the semiconductor wafer 1 obtained by step S6 is fixed on Second support 7, and Second support 7 is placed on can applies on the platform of external force;
S8: realize being separated of semiconductor wafer 1 and the first carrier-pellet 4 by external force;
S9: use the semiconductor wafer 1 that the first organic reagent cleaning step S8 obtains, removes first bonding agent 2 on semiconductor wafer 1 surface, obtains the semiconductor wafer after bonding 1.
The material of semiconductor wafer 1 can be any one in silicon, GaAs, indium phosphide or carborundum, is GaAs in the present embodiment.
The material of the first carrier-pellet 4 is that the mechanical strength such as sapphire or sheet glass is good, physical-chemical reaction does not occur, reusable material with the first bonding agent 2, second bonding agent 5.It is sapphire in the present embodiment.
Operate for convenience of follow-up bonding technology of going, the size of the first carrier-pellet 4 is larger than the size of semiconductor wafer 1.In the present embodiment, sapphire diameter 4mm-10mm larger than GaAs disk.
First bonding agent 2 should mechanical strength weak, viscosity is moderate, easy cleaning, do not react with semiconductor wafer 1 and the first carrier-pellet 4.In the present embodiment, the model of the first bonding agent 2 is the SPACELIQUIDTR2-50482 that daily use chemicals Seiko is produced.
Second bonding agent 5 should strong, the good airproof performance of viscosity, does not commonly use chemical reagent, semiconductor wafer 1 reacts with back process, effectively can increase the firmness after semiconductor wafer 1 and carrier-pellet bonding, and protect the first bonding agent 2.In the present embodiment, the model of the second bonding agent 5 is waferbondHT10.10.
First organic reagent is the special remover of the first bonding agent 2, does not react with semiconductor wafer 1 and carrier-pellet.In the present embodiment, the first organic reagent can be any one in isopropyl alcohol, acetone or alcohol, but preferred isopropyl alcohol, the processing time is 60-300 second, and corrosion depth is 1-5mm.Isopropyl alcohol, acetone.If the first bonding agent changes, proprietary remover also correspondingly adjusts.
The material of Second support 7 adopt smooth, semiconductor wafer 1 can be fixed and facilitate later processing operation, such as adopt UV film, blue film or vacuum cup etc.In the present embodiment, Second support 7 is UV film.
Second organic reagent is the scavenger specially of the second bonding agent 5, in the present embodiment, the second organic reagent can be n-dodecane, toluene any one, but preferential n-dodecane, processing time 120-900 second.
In step S8, for semiconductor wafer 1 is separated and apply usually to adsorb the first carrier-pellet 4 with vacuum cup in the process of external force, control dynamics by mechanical device or manual operations, wedge shape hard object also can be used to embed up-stripping first carrier-pellet 4 in the first bonding agent 2.In the present embodiment, wedge shape hard object is single-edge blade 8.
With a specific embodiment, technical scheme of the present invention is further introduced below.
Bonding method comprises the following steps:
Step 1: the surface cleaning semiconductor wafer 1 and the first carrier-pellet 4 with acetone;
Step 2: distinguish spin coating first bonding agent 2 as interim bonding bonding agent, rotating speed 1000rpm, 60 seconds time in the front of semiconductor wafer 1 and the first carrier-pellet 4.Then, hot plate toasts with the temperature of 115 DEG C and within 90 seconds, is cured, the thickness of individual layer TR2-50482 is about 14um;
Step 3: after semiconductor wafer 1 and the first carrier-pellet 4 at room temperature cool naturally, by the vis-a-vis of semiconductor wafer 1 and the first carrier-pellet 4, temperature be 120 DEG C, vacuum degree is less than 5mbar, pressure carries out bonding 120 seconds under being greater than 2 atmospheric conditions, forms the preliminary bonding body of semiconductor wafer 1 and the first carrier-pellet 4;
Step 4: the preliminary bonding body of semiconductor wafer 1 and the first carrier-pellet 4 to be immersed in the first organic reagent 75 seconds, remove semiconductor wafer 1 edge toward dark annular first bonding agent 2 of Rio 2mm, form gap 3, thus form the final bonding body of semiconductor wafer 1 and the first carrier-pellet 4, as shown in Figure 1;
Step 5: at semiconductor wafer 1 backside coating second bonding agent 5, with the finedraw 3 formed in filling step 4, is used for protection first bonding agent 2 and increase the viscosity of semiconductor wafer 1 and the first carrier-pellet 4, rotating speed 1500rpm, 30 seconds time.Then, hot plate toasts with the temperature of 155 DEG C and within 120 seconds, is cured, as shown in Figure 2;
Step 6: complete the techniques such as backside through vias, back face metalization and back side scribe line corrosion successively after the final bonding body of semiconductor wafer 1 and the first carrier-pellet 4 is thinned to 40um, as shown in Figure 3.
Bonding method is gone to comprise the following steps:
Step 7: the final bonding body of the semiconductor wafer 1 completing back process obtained in step 6 and the first carrier-pellet 4 to be immersed in the second organic reagent 10 minutes, to remove the second bonding agent 5, expose gap 3;
Step 8: semiconductor wafer 1 back side step 7 obtained is attached on the Second support 7 that fixes, Second support 7 is gently pressed to make it fully to contact with semiconductor wafer 1 with instrument, and single-edge blade 8 is embedded between Second support 7 and the first carrier-pellet 4, then lie on perforated platform 9, as shown in Figure 4, Figure 5;
Step 9: open vacuum and downward suction is produced to Second support 7, pull of vacuum is converted into the downward pulling force of semiconductor wafer 1, and single-edge blade 8 stops the first carrier-pellet 4 to sink, to the first carrier-pellet 4 resistance upwards, when resistance upwards and downward pulling force exceed the elastic range of the first bonding agent 2, first bonding agent 2 ftractures, and the first carrier-pellet 4 is separated with semiconductor wafer 1, as shown in Figure 5;
Step 10: the semiconductor wafer 1 of separator well is fixed on rinsing table, with the first organic reagent cleaning removal first bonding agent 2, semiconductor wafer 1 after cleaning forms cutting-up finedraw 11 through cutting-up, thus semiconductor wafer 1 is divided into independently tube core, as shown in Figure 6.
Realize the interim bonding of ultra-thin semiconductor disk 1 through above step and remove bonding, the method can effectively reduce ultra-thin semiconductor disk 1 overleaf in technical process particularly disk be separated, sliver rate in the step such as cleaning and chip cutting-up, chip yield is high; The separation process of semiconductor wafer 1 requires no high temperature solution wax, there is not the problem that the different adhesion caused of coefficient of thermal expansion and contraction declines between semi-conducting material from back metal 6.
Claims (9)
1. for ultra-thin semiconductor disk interim bonding method and remove a bonding method, it is characterized in that:
Described bonding method comprises the following steps:
S1: the surface of cleaning semiconductor wafer (1) and the first carrier-pellet (4);
S2: by front surface coated first bonding agent (2) of semiconductor wafer (1) and the first carrier-pellet (4), and carry out heat and dry solidification;
S3: by semiconductor wafer (1) and the first carrier-pellet (4) vis-a-vis, by the first bonding agent (2) bonding, forms the preliminary bonding body of semiconductor wafer (1) and the first carrier-pellet (4);
S4: be immersed in the first organic reagent by semiconductor wafer (1) and the bonding body of the first carrier-pellet (4), removes first bonding agent (2) at semiconductor wafer (1) edge, forms gap (3);
S5: semiconductor wafer (1) backside coating second bonding agent (5) obtained in step S4, with the gap (3) that filling step S4 is formed, and be cured, form the final bonding body of semiconductor wafer (1) and the first carrier-pellet (4);
The described bonding method that goes comprises the following steps:
S6: semiconductor wafer (1) and the final bonding body of the first carrier-pellet (4) are immersed in the second organic reagent, remove second bonding agent (5) at semiconductor wafer (1) edge, to expose gap (3);
S7: the semiconductor wafer (1) obtained by step S6 is fixed on Second support (7), and Second support (7) is placed on can applies on the platform of external force;
S8: realize being separated of semiconductor wafer (1) and the first carrier-pellet (4) by external force;
S9: use the semiconductor wafer (1) that the first organic reagent cleaning step S8 obtains, removes first bonding agent (2) on semiconductor wafer (1) surface, obtains the semiconductor wafer after bonding (1).
2. the interim bonding method for ultra-thin semiconductor disk according to claim 1 and remove bonding method, is characterized in that: the material of described semiconductor wafer (1) is any one in silicon, GaAs, indium phosphide or carborundum.
3. the interim bonding method for ultra-thin semiconductor disk according to claim 1 and remove bonding method, it is characterized in that: described first carrier-pellet (4) with the first bonding agent (2), the second bonding agent (5), physical-chemical reaction does not occur, and the first carrier-pellet (4) adopts reusable material; Described first bonding agent (2), the second bonding agent (5) are not reacted with semiconductor wafer (1).
4. the interim bonding method for ultra-thin semiconductor disk according to claim 1 and remove bonding method, is characterized in that: the size of described first carrier-pellet (4) is larger than the size of semiconductor wafer (1).
5. the interim bonding method for ultra-thin semiconductor disk according to claim 1 and remove bonding method, is characterized in that: the model of described first bonding agent (2) is SPACELIQUIDTR2-50482.
6. the interim bonding method for ultra-thin semiconductor disk according to claim 1 and remove bonding method, is characterized in that: the model of described second bonding agent (5) is waferbondHT10.10.
7. the interim bonding method for ultra-thin semiconductor disk according to claim 1 and remove bonding method, is characterized in that: described first organic reagent is the special remover of the first bonding agent (2).
8. removing bonding method temporarily and removing bonding method for ultra-thin semiconductor disk according to claim 1, is characterized in that: described second organic reagent is the special remover of the second bonding agent (5).
9. removing bonding method temporarily and removing bonding method for ultra-thin semiconductor disk according to claim 1, is characterized in that: described Second support (7) adopts smooth, can to fix semiconductor wafer (1) material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510591118.0A CN105280541A (en) | 2015-09-16 | 2015-09-16 | Temporary bonding method and bonding-removing method for ultrathin semiconductor wafer |
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| CN201510591118.0A CN105280541A (en) | 2015-09-16 | 2015-09-16 | Temporary bonding method and bonding-removing method for ultrathin semiconductor wafer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449505A (en) * | 2016-08-22 | 2017-02-22 | 中国电子科技集团公司第五十五研究所 | Back technique for semiconductor ultrathin device |
| CN109494182A (en) * | 2018-11-26 | 2019-03-19 | 南京中电芯谷高频器件产业技术研究院有限公司 | A kind of holding method for ultra-thin semiconductor wafer in semiconductor integrated technique |
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| CN101925996A (en) * | 2008-01-24 | 2010-12-22 | 布鲁尔科技公司 | Device wafer reversibly is installed in method on the carrier substrate |
| CN102326227A (en) * | 2009-02-26 | 2012-01-18 | 信越半导体股份有限公司 | The manufacturing approach of SOI wafer |
| CN102388431A (en) * | 2009-03-18 | 2012-03-21 | Ev集团有限责任公司 | Device and method for detaching a wafer from a carrier |
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| CN109494182A (en) * | 2018-11-26 | 2019-03-19 | 南京中电芯谷高频器件产业技术研究院有限公司 | A kind of holding method for ultra-thin semiconductor wafer in semiconductor integrated technique |
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Application publication date: 20160127 |