CN105261662A - Solar battery chip having diffused junction bypass diode - Google Patents
Solar battery chip having diffused junction bypass diode Download PDFInfo
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- CN105261662A CN105261662A CN201510691326.8A CN201510691326A CN105261662A CN 105261662 A CN105261662 A CN 105261662A CN 201510691326 A CN201510691326 A CN 201510691326A CN 105261662 A CN105261662 A CN 105261662A
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- solar cell
- bypass diode
- diffusion junctions
- diffusion
- chip
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- 238000009792 diffusion process Methods 0.000 claims abstract description 77
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 27
- 150000001875 compounds Chemical class 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 2
- 238000005286 illumination Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000002427 irreversible effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/142—Energy conversion devices
- H01L27/1421—Energy conversion devices comprising bypass diodes integrated or directly associated with the device, e.g. bypass diode integrated or formed in or on the same substrate as the solar cell
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
Abstract
The invention discloses a solar battery chip having a diffused junction bypass diode. The solar battery chip consists from top to bottom of a front electrode, a solar battery photoelectric conversion layer comprising a emitter region and a base region, and first and second back electrodes isolated from each other. The lower surface of the base region is provided with a local region diffused junction. The diffused junction is located at one side of the battery chip. The first back electrode covers but does not exceed the portion, that is not subjected to surface diffusion, of the base region. The second back electrode covers but does not exceed the surface of the diffused junction. The bypass diode designed in the invention is used for protecting adjacent battery pieces in a battery string, the chip is simple in process and does not require repeated diffusion and etching for the formation of the bypass diode mechanically isolated from the battery photoelectric conversion layer, the bypass diode is located on the back of the battery pieces without occupying an illumination area of the battery surface, the base region is used as positive (or negative) electrode for both the photoelectric conversion layer and the bypass diode, and therefore the power loss is reduced.
Description
Technical field
The present invention relates to a kind of solar cell chip with diffusion junctions bypass diode, belong to semiconductor photoelectronic device and technical field.
Background technology
Solar cell is one of important clean energy resource, due to the dispersiveness of solar energy, the power-supply system of formation scale all must adopt a large amount of solar cell piece to carry out connection in series-parallel, the problem brought thus is, once wherein a slice cell piece inefficacy in series-parallel network, decline to a great extent causing the generated output of whole network; Meanwhile, the cell piece of inefficacy is equivalent to a load, forms so-called hot spot, and this dead battery sheet will be caused under long-time load to be subject to irreversible breaking, and namely whole network is subject to the decay of irreversible efficiency, even whole network failure.Therefore, can be all every sheet cell piece backward diode in parallel usually, claim bypass diode, under normal operating conditions, bypass diode, because reversal connection is in cell piece, be equivalent to open circuit; And when a certain cell piece lost efficacy, be in off position, bypass diode is in forward and is series at adjacent cell sheet, conducting under comparatively low pressure drop, ensure that the normal operation of whole network.But, add bypass diode, on the one hand, add the complexity of cost and packaging technology, on the other hand, for non-concentrating battery system, as space application battery, due to battery close-packed arrays, bypass diode will take larger a part of area, reduce the utilization of sunlight, and for concentrator cell system, need equally in the battery system of solid matter at some, as electric heating coproduction battery system, then cannot realize every sheet cell piece and configure a bypass diode.At present, in some solar cells, bypass diode is integrated on cell piece, namely in cell piece, isolate a part of area make diode, simplify battery packaging technology, also reduce the illuminating area that bypass diode takies to a certain extent simultaneously, but, this method still fails to avoid completely the waste of illuminating area, and it is prior, when this method is only applicable to less photogenerated current, because bypass diode allows the electric current passed through to be directly proportional to its p-n junction area, photogenerated current is larger, require that bypass diode area is also larger, as in concentrator cell, bypass diode will take more than 30% illuminating area, obviously be inapplicable.
Summary of the invention
For the problems referred to above, the present invention discloses a kind of solar cell chip with diffusion junctions bypass diode, described solar cell chip comprises from top to bottom: front electrode, the solar cell photoelectric conversion layer comprising emitter region and base and the first mutually isolated backplate, the second backplate, described base lower surface has a regional area diffusion junctions, described diffusion junctions is positioned at the side of battery chip, described first backplate covers but does not exceed the part that base does not carry out diffusion into the surface, and described second backplate covers but do not exceed described diffusion junctions surface.
Preferably, described front electrode and sensitive surface electrode, it is metal electrode of the grating or transparency conducting layer, comprises at least one connecting band pad;
Preferably, provide a solar cell substrate, form emitter region at this solar cell substrate upper surface by diffusion technology, the part be not diffused below described emitter region is as base;
Preferably, described regional area diffusion junctions is positioned at base lower surface, with described emitter region with once diffuseing to form;
Preferably, described solar cell chip is multijunction compound battery, comprises an epitaxial substrate, and adopts MOCVD or MBE at extension Grown photoelectric conversion layer;
Preferably, described regional area diffusion junctions is positioned at described multijunction compound solar cell epitaxial substrate lower surface, and described epitaxial substrate only can serve as substrate, also can be multijunction cell bottommost one knot battery, and described epitaxial substrate polarity is identical with base;
Preferably, described regional area diffusion junctions area is determined according to photogenerated current size, preferably, is not more than 70mA/mm by diffusion junctions current density
2;
Preferably, described first backplate covers but does not exceed the base without diffusion;
Preferably, described second backplate is positioned at described regional area diffusion junctions central area, and does not exceed diffusion junctions scope.
The bypass diode of the present invention's design is for the protection of cell piece adjacent in battery strings, and its advantage comprises:
(1) for silion cell, bypass diode diffusion junctions and emitter region are formed via One Diffusion Process; For compound multijunction cell, One Diffusion Process is only needed to form bypass diode, and in the bypass diode manufacturing process of above-mentioned two kinds of solar cells, all without the need to experiencing etch process, therefore, structure and the manufacture craft of a kind of solar cell chip of the present invention's proposition are simple, without the need to the bypass diode through repeatedly spreading, etching formation and cell photoelectric conversion layer mechanical isolation;
(2) base is simultaneously as the positive pole (or negative pole) of photoelectric conversion layer and bypass diode, and by-pass current directly enters bypass diode from base, decreases power loss;
(3) bypass diode of the present invention is positioned at the cell piece back side, does not take battery surface illuminating area.
Accompanying drawing explanation
Fig. 1 illustrates provides a silicon solar cell substrate or a multijunction compound solar cell epitaxial wafer.
Fig. 2 illustrates by One Diffusion Process, forms emitter region at solar cell substrate upper surface, forms diffused junction diode at solar cell substrate lower surface regional area.
Fig. 3 is the back side vertical view of Fig. 2.
Fig. 4 illustrates first, second backplate of deposition.
Fig. 5 is the back side vertical view of Fig. 4.
Fig. 6 illustrates at emitter region surface deposition front electrode.
Fig. 7 is the front plan view of Fig. 6.
Fig. 8 illustrates the connected mode that a kind of solar cell chip with diffusion junctions bypass diode forms battery strings, and it is profile.
Fig. 9 illustrates the connected mode that a kind of solar cell chip with diffusion junctions bypass diode forms battery strings, and it is front plan view.
Figure 10 illustrates the connected mode that a kind of solar cell chip with diffusion junctions bypass diode forms battery strings, and it is back side vertical view.
In figure: 001: solar cell substrate; 001a: emitter region; 001b: base; 002: diffusion junctions bypass diode; 003: the first backplate; 004: the second backplate; 005: front electrode.
Embodiment
Below in conjunction with embodiment, the invention will be further described, but should not limit the scope of the invention with this.
embodiment 1
(1) as shown in Figure 1, provide a silicon solar cell substrate 001, it is p-type;
(2) as shown in Figures 2 and 3, phosphorus is spread at the lower surface of silicon solar cell substrate 001 upper surface and local, form the emitter region 001a of N-shaped and the diffusion junctions bypass diode 002 of back side regional area respectively, the positive pole (p-type layer) of this diffusion junctions bypass diode is simultaneously as base 001b, described emitter region 001a and base 001b forms solar cell photoelectric conversion layer, the n-layer diffuseed to form is the negative pole of diffusion junctions bypass diode 002, be positioned at the side of battery chip, its area is determined according to solar cell chip photogenerated current size, make to be no more than 70mA/mm by the current density size of diffusion junctions bypass diode 002
2,
(3) as shown in Figures 4 and 5, deposit the first backplate 003, second backplate 004, wherein the first backplate 003 covers but does not exceed the part that base 001b does not carry out diffusion into the surface, as battery chip positive pole, second backplate 004 covers but does not exceed described diffusion junctions bypass diode 002 surface, as the negative pole of diffusion junctions bypass diode 002;
(4) as shown in Figures 6 and 7, prepare front electrode 005, it at least comprises a connecting band pad, and some gate line electrodes, obtained solar cell chip;
(5) as shown in Fig. 8 ~ Fig. 9; aforementioned solar cell chip is connected by connecting band; then described diffusion junctions bypass diode 002 negative pole is connected with the positive pole 003 of adjacent battery chip; when wherein a slice cell piece lost efficacy; the diffusion junctions bypass diode 002 of the upper a slice chip via chip failing is flowed directly into chip failing positive pole 003 by the electric current in battery strings, thus reaches the object of shielding failure chip.
embodiment 2
(1) as shown in Figure 1, provide a silicon solar cell substrate 001, it is N-shaped;
(2) as shown in Figures 2 and 3, in silicon solar cell substrate upper surface and lower surface diffused with boron locally, form the emitter region 001a of p-type and the diffusion junctions bypass diode 002 of back side regional area respectively, the negative pole (n-layer) of this diffusion junctions bypass diode 002 is simultaneously as base 001b, described emitter region 001a and base 001b forms solar cell photoelectric conversion layer, the p-type layer diffuseed to form is the positive pole of diffusion junctions bypass diode 002, be positioned at the side of battery chip, its area is determined according to solar cell chip photogenerated current size, make to be no more than 70mA/mm by the current density size of diffusion junctions bypass diode 002
2,
(3) as shown in Figures 4 and 5, deposit the first mutually isolated backplate 003, second backplate 004, wherein the first backplate 003 covers but does not exceed the part that base 001b does not carry out diffusion into the surface, as battery chip negative pole, second backplate 004 covers but does not exceed described diffusion junctions bypass diode 002 surface, as the positive pole of diffusion junctions bypass diode 002;
(4) as shown in Figures 6 and 7, prepare front electrode 005, it at least comprises a connecting band pad, and some gate line electrodes, obtained solar cell chip.
embodiment 3
(1) as shown in Figure 1, one compound solar cell epitaxial wafer is provided, its photoelectric conversion layer is GaInP/InGaAs/Ge tri-junction battery, each sub-battery base is p-type, emitter region is N-shaped, wherein Ge is as the epitaxial substrate of compound solar cell, simultaneously again as the 3rd sub-battery, Ge substrate is p-type;
(2) as shown in Figures 2 and 3, at Ge substrate back regional area diffusion phosphorus, form p/n diffusion junctions, as diffusion junctions bypass diode 002, be positioned at the side of battery chip, described diffusion junctions area is determined according to solar cell chip photogenerated current size, makes to be no more than 70mA/mm by the current density size of diffusion junctions bypass diode 002
2;
(3) as shown in Figures 4 and 5, deposit the first mutually isolated backplate, the second backplate, wherein the first backplate covers but does not exceed the part that base does not carry out diffusion into the surface, as battery chip positive pole, second backplate covers but does not exceed described diffusion junctions bypass diode 002 surface, as the negative pole of diffusion junctions bypass diode 002;
(4) as shown in Figures 6 and 7, prepare front electrode, it at least comprises a connecting band pad, and some gate line electrodes.
embodiment 4
(1) as shown in Figure 1, provide a GaInP/InGaAs/GaAs Double Junction Tandem Solar Cells epitaxial wafer, its photoelectric conversion layer is GaInP/InGaAs binode battery, and individual sub-battery base is p-type, emitter region is N-shaped, and wherein GaAs is only as epitaxial substrate, is p-type;
(2) as shown in Figures 2 and 3, p/n diffusion junctions is diffuseed to form at GaAs substrate back regional area, as diffusion junctions bypass diode 002, be positioned at the side of battery chip, described diffusion junctions area is determined according to solar cell chip photogenerated current size, makes to be no more than 70mA/mm by the current density size of diffusion junctions bypass diode 002
2;
(3) as shown in Figures 4 and 5, deposit the first mutually isolated backplate, the second backplate, wherein the first backplate covers but does not exceed the part that base does not carry out diffusion into the surface, as battery chip positive pole, second backplate covers but does not exceed described diffusion junctions bypass diode 002 surface, as the negative pole of diffusion junctions bypass diode 002;
(4) as shown in Figures 6 and 7, prepare front electrode, it at least comprises a connecting band pad, and some gate line electrodes.
Claims (9)
1. the present invention discloses a kind of solar cell chip with diffusion junctions bypass diode, described solar cell chip comprises from top to bottom: front electrode, the solar cell photoelectric conversion layer comprising emitter region and base and the first mutually isolated backplate, the second backplate, described base lower surface has a regional area diffusion junctions, described diffusion junctions is positioned at the side of battery chip, described first backplate covers but does not exceed the part that base does not carry out diffusion into the surface, and described second backplate covers but do not exceed described diffusion junctions surface.
2. a kind of solar cell chip with diffusion junctions bypass diode according to claim 1, it is characterized in that: described front electrode and sensitive surface electrode, it is metal electrode of the grating or transparency conducting layer, comprises at least one connecting band pad.
3. a kind of solar cell chip with diffusion junctions bypass diode according to claim 1, it is characterized in that: a solar cell substrate is provided, form emitter region at this solar cell substrate upper surface by diffusion technology, the part be not diffused below described emitter region is as base.
4. a kind of solar cell chip with diffusion junctions bypass diode according to claim 3, is characterized in that: described regional area diffusion junctions is positioned at base lower surface, with described emitter region with once diffuseing to form.
5. a kind of solar cell chip with diffusion junctions bypass diode according to claim 1, it is characterized in that: described solar cell chip is multijunction compound solar cell, comprise an epitaxial substrate, and adopt MOCVD or MBE at extension Grown photoelectric conversion layer.
6. a kind of solar cell chip with diffusion junctions bypass diode according to claim 5, it is characterized in that: described regional area diffusion junctions is positioned at described multijunction compound solar cell epitaxial substrate lower surface, described epitaxial substrate only serves as substrate, or as multijunction cell bottommost one knot battery, and described epitaxial substrate polarity is identical with base.
7. a kind of solar cell chip with diffusion junctions bypass diode according to claim 1, is characterized in that: described regional area diffusion junctions area is determined according to photogenerated current size, is not more than 70mA/mm by diffusion junctions current density
2.
8. a kind of solar cell chip with diffusion junctions bypass diode according to claim 1, is characterized in that: described first backplate covers but do not exceed the base without diffusion.
9. a kind of solar cell chip with diffusion junctions bypass diode according to claim 1, is characterized in that: described second backplate is positioned at described regional area diffusion junctions central area, and does not exceed diffusion junctions scope.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510691326.8A CN105261662B (en) | 2015-10-23 | 2015-10-23 | A kind of solar cell chip with diffusion junctions bypass diode |
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| CN201510691326.8A CN105261662B (en) | 2015-10-23 | 2015-10-23 | A kind of solar cell chip with diffusion junctions bypass diode |
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| CN105261662A true CN105261662A (en) | 2016-01-20 |
| CN105261662B CN105261662B (en) | 2017-07-07 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105679864A (en) * | 2016-03-21 | 2016-06-15 | 中国科学院半导体研究所 | Solar cell module integrated from silicon cell and chip-type backward diode and production method of solar cell module |
| CN109686799A (en) * | 2019-01-24 | 2019-04-26 | 中国科学院半导体研究所 | Solar cell module |
| CN112289877A (en) * | 2020-10-30 | 2021-01-29 | 中国电子科技集团公司第十八研究所 | Bypass diode module for flexible thin film solar cell module |
| CN113964227A (en) * | 2020-07-21 | 2022-01-21 | 苏州阿特斯阳光电力科技有限公司 | Photovoltaic module |
| CN114122173A (en) * | 2020-08-27 | 2022-03-01 | 中国科学院半导体研究所 | Integrated structure of graphene bypass diode and crystalline silicon solar cell and preparation method |
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| US6452086B1 (en) * | 1998-10-05 | 2002-09-17 | Astrium Gmbh | Solar cell comprising a bypass diode |
| CN201345367Y (en) * | 2008-12-30 | 2009-11-11 | 上海交大泰阳绿色能源有限公司 | Battery plate for avoiding generating warm spot |
| CN101950772A (en) * | 2010-08-05 | 2011-01-19 | 中山大学 | Preparation method of crystalline silicon solar cell with bypass diode |
-
2015
- 2015-10-23 CN CN201510691326.8A patent/CN105261662B/en active Active
Patent Citations (4)
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| CN1120245A (en) * | 1994-04-28 | 1996-04-10 | 夏普株式会社 | Solar cell and a method of manufacturing thereof |
| US6452086B1 (en) * | 1998-10-05 | 2002-09-17 | Astrium Gmbh | Solar cell comprising a bypass diode |
| CN201345367Y (en) * | 2008-12-30 | 2009-11-11 | 上海交大泰阳绿色能源有限公司 | Battery plate for avoiding generating warm spot |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105679864A (en) * | 2016-03-21 | 2016-06-15 | 中国科学院半导体研究所 | Solar cell module integrated from silicon cell and chip-type backward diode and production method of solar cell module |
| CN109686799A (en) * | 2019-01-24 | 2019-04-26 | 中国科学院半导体研究所 | Solar cell module |
| CN113964227A (en) * | 2020-07-21 | 2022-01-21 | 苏州阿特斯阳光电力科技有限公司 | Photovoltaic module |
| CN114122173A (en) * | 2020-08-27 | 2022-03-01 | 中国科学院半导体研究所 | Integrated structure of graphene bypass diode and crystalline silicon solar cell and preparation method |
| CN114122173B (en) * | 2020-08-27 | 2022-11-11 | 中国科学院半导体研究所 | Integrated structure of graphene bypass diode and crystalline silicon solar cell and preparation method |
| CN112289877A (en) * | 2020-10-30 | 2021-01-29 | 中国电子科技集团公司第十八研究所 | Bypass diode module for flexible thin film solar cell module |
| CN112289877B (en) * | 2020-10-30 | 2022-06-07 | 中国电子科技集团公司第十八研究所 | Bypass diode module for flexible thin film solar cell module |
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