CN105186289A - Integrated laser chip - Google Patents
Integrated laser chip Download PDFInfo
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- CN105186289A CN105186289A CN201510631406.4A CN201510631406A CN105186289A CN 105186289 A CN105186289 A CN 105186289A CN 201510631406 A CN201510631406 A CN 201510631406A CN 105186289 A CN105186289 A CN 105186289A
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- Prior art keywords
- laser chip
- semiconductor laser
- chip
- light
- integrated
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
- H01S5/405—Two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
Abstract
The invention relates to the technical field of semiconductor laser arrays, in particular to an integrated laser chip. The integrated laser chip comprises a frame-shaped housing; a medium substrate is arranged in the opening position at the lower end of the housing; a transparent output window is formed in the opening position at the upper end of the housing; the medium substrate is distributed with a connection line; semiconductor laser chips are arranged above the medium substrate in an array manner, wherein the semiconductor laser chips are connected with the connection line, and the light-emitting surfaces of the semiconductor laser chips directly face to the output window; pins are led out of the medium substrate; and the pins are used for supplying power to the semiconductor laser chips through the connection line. The integrated laser chip can integrate the laser in one chip, so that the microminiaturization of laser devices also can be realized; and the integrated laser chip is higher in reliability, so that the degree of standardization of the laser chip is greatly improved.
Description
Technical field
The present invention relates to semiconductor laser array technical field, specifically, relate to a kind of integrated laser chip.
Background technology
Existing laser display and lighting field visible light lasers light source used mainly contain diode pumped solid state laser and semiconductor laser two kinds.Along with semiconductor laser power constantly promotes, the laser speckle existing for diode pumped solid state laser is high, operating environment requirements is harsh, high in cost of production shortcoming more highlights, therefore the development trend of lasing light emitter more and more trends towards semiconductor laser.
At present, semiconductor laser packaged type mainly contains single tube LD, Bar bar and semiconductor laser array three kinds of forms.Wherein, single tube LD light power is lower, thus needs by quantity to make up the under powered shortcoming of monomer, but quantity also makes heat dissipation problem highlight while increasing; Bar bar packaged type, power is relatively high, but along with display and lighting require brightness more and more higher, Bar bar encapsulation light power still can not meet practical application preferably; Semiconductor laser array can in very little volume integrated dozens of luminescence chip, the Laser output of tens of watts can be formed preferably, use very convenient, thus use comparatively wide in range.But; above-mentioned three kinds of packaged types are the mode that single colored chip encapsulates separately; because semiconductor laser is when for showing field; often can run into the occasion that needs three look laser exports simultaneously; thus carry out closing the problem of light to three not homochromy laser arrays with regard to having related to; and complicated beam shaping conjunction light optical system in this process, can be used, very inconvenient.On the other hand, existing semiconductor laser array adopts rectanglar arrangement mode mostly, although the packaging technology of rectanglar arrangement mode is simple, circuit board arrangement is succinct, but, due to all semiconductor laser chips fast axle all in one direction, therefore just inevitably need to use cylindrical lens in later stage shaping, thus add the complexity of shaping light path, make subsequent treatment cost be difficult to reduce.
In addition, although along with scientific and technological progress, semiconductor laser technology becomes better and approaching perfection day by day, but semiconductor laser is difficult to breakthrough bottleneck all the time on the direction that miniaturized, densification are applied, tracing it to its cause, should be that the array way that existing semiconductor laser array adopts can not bring preferably job stability for integrated laser chip.
Apart from the above, at semiconductor laser embody rule as in field of projector, use LASER Light Source time all need to carry out dodging to it, to obtain a uniform given shape hot spot of light distribution, thus imager chip can be irradiated uniformly.Existing dodging mainly contains fly's-eye lens group technique and even light pipe technology, and wherein, fly's-eye lens group technique needs larger collimated incident hot spot, therefore this light-uniforming technology of LASER Light Source does not have advantage; And even light pipe technology is divided into solid light pipe and hollow light pipe two class, they respectively have pluses and minuses.Because existing semiconductor laser exists above-mentioned various defects, thus need when causing even light pipe to mate with LASER Light Source to carry out the operation such as shaping, incident angle adjustment to LASER Light Source, therefore need specially to join a set of shaping, angular adjustment apparatus, not only complicated operation and cost is higher.
Summary of the invention
In order to the problem of existing laser array later stage shaping complexity can be overcome, the invention provides a kind of circle asymmetric semiconductor laser array.
According to round asymmetric semiconductor laser array of the present invention, it comprises base, base is configured with the ridge structure of at least one ring-type, and at least one ridge structure described has same central shaft; The side of arbitrary ridge structure is all symmetrically provided with semiconductor laser chip.
In round asymmetric semiconductor laser array of the present invention, can by being symmetrically provided with the mode of semiconductor laser chip, the output beam of laser array is made can preferably to present round symmetry characteristic, the cylindrical lens that follow-up shaping adopts can be saved, thus assembly technology is greatly simplified, manufacturing cost greatly reduces.The present invention has broken the thinking set of traditional rectangular arrangement, can be undertaken justifying symmetric arrays by adopting such as cos semiconductor laser chip, although it is different to make single luminescence chip also maintain XY directional divergence angular difference, but array Integral luminous mode shows as round symmetric mode, thus make later stage shaping light path greatly succinct.
In addition, semiconductor laser chip can be arranged on base by multiple ridge structures of concentric circles, and multiple semiconductor laser chips that each ridge structure is arranged all can centered by symmetrical arrangement, thus preferably make the laser beam parameter after arranging symmetrical in all directions.
As preferably, chassis interior is provided with temperature sensor, and temperature sensor is for gathering the working temperature of semiconductor laser chip and correspondingly producing temperature signal.
In round asymmetric semiconductor laser array of the present invention, can at chassis interior set temperature transducer, thus preferably can detect the working temperature of semiconductor laser chip in real time, thus can the be real-time operating state of laser array be adjusted, ensure that its job stability preferably.
As preferably, base position is provided with electric interfaces, and electric interfaces comprises the power supply interface for powering to semiconductor laser chip, and for reading the data-interface of temperature signal.
In round asymmetric semiconductor laser array of the present invention, power supply interface can have multiple, and multiple semiconductor laser chip the quantity of corresponding power supply interface can be divided into many groups, wherein semiconductor laser chip of each group all can connected in series or in parallelly connect from different power supply interfaces afterwards, thus make it possible to by powering to different power supply interfaces, and make laser array of the present invention can carry out work with different states, and then can apply in actual production more neatly.
As preferably, can being provided with in base such as the substrate of fixing ridge structure, inside substrate, being provided with the circuit board for settling semiconductor laser chip.
In round asymmetric semiconductor laser array of the present invention; a laminar substrate can be just set on circuit boards; substrate be arranged so that ridge structure can preferably be fixed on base; and the semiconductor laser chip that can preferably buffer circuit plate and circuit be arranged, thus preferably protective effect can be played.
As preferably, semiconductor laser chip welds with substrate eutectic.
In round asymmetric semiconductor laser array of the present invention, semiconductor laser chip can weld with substrate eutectic, thus preferably to semiconductor laser chip, can ensure that the job stability of semiconductor laser chip.
As preferably, semiconductor laser chip is connected with circuit board gold thread.
In round asymmetric semiconductor laser array of the present invention, semiconductor laser chip can be connected with circuit board gold thread, thus semiconductor laser chip can be preferably electrically connected with circuit board.
As preferably, the spacing between arbitrary neighborhood semiconductor laser chip is 2 ~ 5mm.
In round asymmetric semiconductor laser array of the present invention, spacing between arbitrary neighborhood semiconductor laser chip can be 2 ~ 5mm, this set, while can obtaining better light intensity, better reduction base volume, preferably can also solve the interference problem between adjacent semiconductor laser chip and heat dissipation problem.
As preferably, arbitrary ridge structure is all configured to centrosymmetric polygon.
In round asymmetric semiconductor laser array of the present invention, ridge structure can be configured to centrosymmetric polygon, thus make ridge structure side every day all preferably can arrange one or more semiconductor laser chip according to demand, thus preferably simplify assembly technology.
As preferably, corresponding semiconductor laser chip is arranged at the outside of corresponding ridge structure.
In round asymmetric semiconductor laser array of the present invention, semiconductor laser chip can be located at the outside of ridge structure, thus the semiconductor laser chip on each ridge structure can preferably be isolated, and ensure that the stability of work.
In round asymmetric semiconductor laser array of the present invention, by adopting the ridge structure of concentric annular, semiconductor laser chip is supported, while making semiconductor laser chip be convenient to install, also make it possible to the number of rings by adjusting ridge structure and overall power is preferably adjusted.
Close the problem of light, shaping complexity in order to the existing laser array later stage can be overcome, present invention also offers a kind of white semiconductor laser array.
According to white semiconductor laser array of the present invention, it comprises base, base is configured with the ridge structure of at least one ring-type, and at least one ridge structure described has same central shaft; The side of arbitrary ridge structure is all symmetrically provided with semiconductor laser chip, and semiconductor laser chip comprises red light semiconductor laser chip, Green-emitting semiconductor laser chip, and blue-light semiconductor laser chip.
In white semiconductor laser array of the present invention, can by encapsulating redgreenblue semiconductor laser chip according to certain power proportions in an array simultaneously, make a semiconductor laser array can simultaneously or timesharing export RGB laser, the white light source being applicable to show or throw light on preferably can be obtained through simple even photosystem, avoid complicated shaping combined optical system, assembly technology is greatly simplified.
In addition, the arrangement mode of redgreenblue semiconductor laser chip can adopt the arrangement structure of any one circle asymmetric semiconductor laser array above-mentioned, thus can bring identical technique effect.
As preferably, chassis interior is provided with temperature sensor, and temperature sensor is for gathering the working temperature of semiconductor laser chip and correspondingly producing temperature signal.
In white semiconductor laser array of the present invention, can at chassis interior set temperature transducer, thus preferably can detect the working temperature of semiconductor laser chip in real time, thus can the be real-time operating state of laser array be adjusted, ensure that its job stability preferably.
As preferably, base position is provided with electric interfaces, and electric interfaces comprises the power supply interface for powering to semiconductor laser chip, and for reading the data-interface of temperature signal.
As preferably, red light semiconductor laser chip, Green-emitting semiconductor laser chip and blue-light semiconductor laser chip adopt different power supply interfaces to power separately respectively.
In white semiconductor laser array of the present invention, power supply interface can have multiple, and semiconductor laser chip can correspond to the quantity of power supply interface and be divided into many groups, wherein, semiconductor laser chip in arbitrary group can be the semiconductor laser chip of same color, thus by powering to different power supply interfaces, and can preferably obtain different laser.
As preferably, in base, being provided with the substrate for fixing ridge structure, inside substrate, being provided with the circuit board for settling semiconductor laser chip.
As preferably, semiconductor laser chip welds with substrate eutectic.
As preferably, semiconductor laser chip is connected with circuit board gold thread.
As preferably, the spacing between arbitrary neighborhood semiconductor laser chip is 2 ~ 5mm.
As preferably, the number ratio of red light semiconductor laser chip, Green-emitting semiconductor laser chip and blue-light semiconductor laser chip is 1:0.86:0.52.
In white semiconductor laser array of the present invention, the power ratio of red light semiconductor laser chip, Green-emitting semiconductor laser chip and blue-light semiconductor laser chip is preferably 1:0.86:0.52, this kind of power ratio makes it possess preferably while heat dispersion, also makes it can obtain white laser compared with Jia Sewen when co-operation.
White semiconductor laser array of the present invention, break the thinking set of single colored chip encapsulation, the mode of encapsulation can be loaded in mixture by adopting such as three look COS chips, reach laser array simultaneously or timesharing export the ability of redgreenblue laser, eliminate follow-up shaping combined optical system, structure simplifies greatly.When carrying out chip package, encapsulation three look laser chip that can be alternate, the quantity of RGB chip can adopt different ratio according to required white light colour temperature difference.When white semiconductor laser array of the present invention directly applies to projection light machine, closing bundle without the need to carrying out shaping, directly entering even light path, greatly simplify light channel structure.
In addition, in white semiconductor laser array of the present invention, all semiconductor laser chips can also adopt the modes such as such as existing rectangular package array, butterfly array of packages, TO encapsulation to encapsulate.
In order to existing laser array can be overcome for needing the problem of complicated orthopedic systems during even light pipe, present invention also offers the even light pipe of a kind of self-luminous laser.
According to the even light pipe of self-luminous laser of the present invention, it comprises the even light pipe body and array laser that are connected as one by connection bracket, array laser comprises base, the nearly even light pipe base side of base is configured with the ridge structure of at least one ring-type, at least one ridge structure described has same central shaft, the side of arbitrary ridge structure is all symmetrically provided with semiconductor laser chip, and semiconductor laser chip comprises red light semiconductor laser chip, Green-emitting semiconductor laser chip and blue-light semiconductor laser chip.
In the even light pipe of self-luminous laser of the present invention, its array laser can adopt any one white semiconductor laser array above-mentioned, and can bring corresponding technique effect.Meanwhile, be also because array laser adopts the structure of any one white semiconductor laser array above-mentioned, make defeated laser without the need to carrying out complicated conjunction light, shaping, thus can directly enter in even light pipe, realize dodging.Thus the adjustment apparatus for shaping that can preferably save between array laser and even light pipe, thus preferably simplify whole projecting light path.
As preferably, chassis interior is provided with temperature sensor, and temperature sensor is for gathering the working temperature of semiconductor laser chip and correspondingly producing temperature signal.
As preferably, base position is provided with electric interfaces, and electric interfaces comprises the power supply interface for powering to semiconductor laser chip.
As preferably, red light semiconductor laser chip, Green-emitting semiconductor laser chip and blue-light semiconductor laser chip adopt different power supply interfaces to power separately respectively.
In the even light pipe of self-luminous laser of the present invention, the semiconductor laser chip of each color all can be divided into many groups and power supply separately, thus preferably can obtain the white light of different-colour.
As preferably, electric interfaces also comprises the data-interface for reading temperature signal.
As preferably, in base, being provided with the substrate for fixing ridge structure, inside substrate, being provided with the circuit board for settling semiconductor laser chip.
As preferably, semiconductor laser chip welds with substrate eutectic, and semiconductor laser chip is connected with circuit board gold thread.
As preferably, the power ratio of red light semiconductor laser chip, Green-emitting semiconductor laser chip and blue-light semiconductor laser chip is 1:0.86:0.52.
As preferably, the spacing between arbitrary neighborhood semiconductor laser chip is 2 ~ 5mm.
In the even light pipe of self-luminous laser of the present invention, spacing between arbitrary neighborhood semiconductor laser chip can be 2 ~ 5mm, this set, while can obtaining better light intensity, better reduction base volume, preferably can also solve the interference problem between adjacent semiconductor laser chip and heat dissipation problem.
In the even light pipe of self-luminous laser of the present invention, even light pipe body can be designed to hollow light pipe or solid light pipe according to real needs, and it is different according to the dimension scale of projection chip, the exiting surface of even light pipe body can be designed as 4:3 and 16:9 two kinds of ratios, the arrangement that array laser also can carry out adapting according to light pipe 4:3 and 16:9 simultaneously encapsulates, thus preferably can ensure the better optical uniformity of the output light of even light pipe.
Comparatively large and be unfavorable for the problems such as optical element standardization, miniaturization in order to existing laser array volume can be overcome, present invention also offers a kind of integrated laser chip.
According to integrated laser chip of the present invention, it comprises the housing being configured to frame-shaped, and housing lower ending opening place is provided with dielectric substrate, and housing upper end open place is provided with transparent output window; Dielectric substrate place is laid with connection line, on dielectric substrate square array have be connected with connection line and light-emitting area just to the semiconductor laser chip of output window; Dielectric substrate place also leads to pin, and pin is used for being powered to semiconductor laser chip by connection line.
In integrated laser chip of the present invention, multiple semiconductor laser chip can be integrated in a chip, thus preferably achieve the microminaturization of Laser Devices, possess preferably reliability simultaneously, the standardization level of laser chip is preferably promoted.By integrated laser chip of the present invention, make laser chip can as integrated circuit (IC) chip, as the optical element of standard, optical engineer can as Electronics Engineer, required integrated laser chip is selected from Standard-part Database's, directly be inserted in special PCB and use, thus greatly advance the standardized development of optical element.
In integrated laser chip of the present invention, dielectric substrate can adopt the material possessing good heat radiating ability and insulating capacity to make, thus can its job stability of better lifting.
As preferably, above dielectric substrate, be provided with the supporting construction for support semiconductor chip of laser.
As preferably, supporting construction comprises the ridge structure of at least one ring-type, and at least one ridge structure described has same central shaft, and the side of arbitrary ridge structure is all symmetrically provided with semiconductor laser chip.
In integrated laser chip of the present invention, its supporting construction can adopt the ridge structure of any one concentric annular above-mentioned, thus corresponding technique effect can be brought, and semiconductor laser chip can adopt centrosymmetric mode to arrange, thus the laser possessing better round symmetry characteristic can be obtained, and then complicated light path orthopedic systems can be saved, reduce its manufacture difficulty, obtain less volume.
As preferably, the material of output window is glass or high light-passing plastic material.
In integrated laser chip of the present invention, the material of output window can be such as glass or high light-passing plastic material, thus laser can preferably be exported.
As preferably, the material of output window is flat glass or the surface glass through binary optical process.
In integrated laser chip of the present invention, the material of output window can be flat glass or the surface glass through binary optical process, thus laser can preferably be exported.
As preferably, semiconductor laser chip comprises red light semiconductor laser chip, Green-emitting semiconductor laser chip and blue-light semiconductor laser chip.
In integrated laser chip of the present invention, semiconductor laser chip can comprise red light semiconductor laser chip, Green-emitting semiconductor laser chip and blue-light semiconductor laser chip, thus can preferably simultaneously or timesharing export different laser, make its range of application more extensive.
As preferably, red light semiconductor laser chip, Green-emitting semiconductor laser chip and blue-light semiconductor laser chip adopt different pins to power separately respectively.
As preferably, the power ratio of red light semiconductor laser chip, Green-emitting semiconductor laser chip and blue-light semiconductor laser chip is 1:0.86:0.52.
In integrated laser chip of the present invention, the power ratio of red light semiconductor laser chip, Green-emitting semiconductor laser chip and blue-light semiconductor laser chip is preferably 1:0.86:0.52, this kind of power ratio makes it possess preferably while heat dispersion, also makes it can obtain white laser compared with Jia Sewen when co-operation.
In integrated laser chip of the present invention, dielectric substrate place can also be encapsulated into protective circuit, thus can preferably protect by noise spectra of semiconductor lasers chip.And package casing can be the various ways such as circle shell-type, flat or dual inline type.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of circle asymmetric semiconductor laser array in embodiment 1;
Fig. 2 is the schematic diagram of white semiconductor laser array in embodiment 3;
Fig. 3 is the schematic diagram of the even light pipe of self-luminous laser in embodiment 4;
Fig. 4 is the schematic diagram of integrated laser chip in embodiment 5;
Fig. 5 be Fig. 4 bow to schematic diagram;
Fig. 6 is that the perpendicular of Fig. 4 cuts open schematic diagram.
Embodiment
For understanding content of the present invention further, the present invention is described in detail in conjunction with the accompanying drawings and embodiments.Should be understood that, embodiment is only to make an explanation to the present invention and and non-limiting.
Embodiment 1
As shown in Figure 1, present embodiments provide a kind of circle asymmetric semiconductor laser array, it comprises base 110.Wherein, base 110 is configured with the ridge structure 150 of multiple ring-type, the central shaft of any two ridge structures 150 all overlaps; The side of arbitrary ridge structure 150 is all symmetrically provided with semiconductor laser chip.
In the present embodiment, in base 110, being provided with the substrate 120 for fixing ridge structure 150, inside substrate 120, being provided with the circuit board for settling semiconductor laser chip.Semiconductor laser chip welds with substrate 120 eutectic, and semiconductor laser chip is connected with circuit board gold thread.What base 110 inside contacted with substrate 120 is provided with temperature sensor, and the temperature sensor in the present embodiment adopts thermocouple temperature sensor, and temperature sensor is for gathering the working temperature also corresponding generation temperature signal of semiconductor laser chip.
In addition, base 110 place is also provided with electric interfaces 140, and electric interfaces 140 comprises the power supply interface for powering to semiconductor laser chip be connected with circuit board, and for reading the data-interface of temperature signal.In the present embodiment, power supply interface is provided with multiple, different power supply interfaces is corresponding respectively powers to all semiconductor laser chips be located on different ridge structure 150, thus the semiconductor laser chip achieved being located on ridge structure 150 is powered separately, and then can preferably adjust the luminous power of the laser array in the present embodiment.
In the present embodiment, the ridge structure 150 of innermost layer is configured to column, because the size of innermost layer ridge structure 150 is less, is configured to column and can saves manufacturing cost on the contrary, and is convenient to assembling.Although it should be noted that in the accompanying drawing (Fig. 1) of the present embodiment and illustrate only the ridge structure 150 that 3 are configured to concentric ring, in actual production, the quantity of ridge structure 150 should be shown power demand and determine.
In the present embodiment, innermost layer ridge structure 150 is configured to centrosymmetric right prism, and all the other ridge structures 150 are all configured to centrosymmetric polygon, and the spacing of arbitrary neighborhood ridge structure 150 is equal.Wherein, semiconductor laser chip is located in the outer side edges of ridge structure 150, and the spacing between arbitrary neighborhood semiconductor laser chip can be arbitrary numerical value in 2 ~ 5mm (being 2.5mm in the present embodiment).
Embodiment 2
A kind of white semiconductor laser array is provided in the present embodiment, the difference of itself and embodiment 1 is: semiconductor laser chip comprises red light semiconductor laser chip 131, Green-emitting semiconductor laser chip 132, and blue-light semiconductor laser chip 133, and same ridge structure 150 is arranged the semiconductor laser chip of same color.
In addition, in the present embodiment, the power ratio of red light semiconductor laser chip 131, Green-emitting semiconductor laser chip 132 and blue-light semiconductor laser chip 133 is 1:0.86:0.52.
Embodiment 3
As shown in Figure 2, the difference that the present embodiment also provides a kind of white semiconductor laser array itself and embodiment 2 is: the rectangular shape of semiconductor laser chip is arranged, and ridge structure 150 comprises the orthogonal multiple rectangular blocks of array.
In addition, in the present embodiment, red light semiconductor laser chip 131, Green-emitting semiconductor laser chip 132 and blue-light semiconductor laser chip 133 interphase distribution.
Embodiment 4
As shown in Figure 3, present embodiments provide the even light pipe of a kind of self-luminous laser, it comprises the even light pipe body and array laser that are connected as one by connection bracket.
Array laser in the present embodiment can adopt the laser array in embodiment 1 or in embodiment 2.The integrally constructed tubulose of connection bracket in the present embodiment, and comprise the first connecting portion be connected with even light pipe body and the second connecting portion be connected with array laser, first connection part structure becomes the channel-shaped corresponding with even light pipe body junction gabarit, and the second connection part structure becomes the channel-shaped corresponding with array laser junction gabarit.
Embodiment 5
As shown in Fig. 4, Fig. 5, Fig. 6, present embodiments provide a kind of integrated laser chip, it comprises the housing 310 being configured to frame-shaped.Wherein, housing 310 lower ending opening place is provided with dielectric substrate 320, and housing 310 upper end open place is provided with transparent output window 350; Dielectric substrate 320 place is laid with connection line, on dielectric substrate 320 square array have be connected with connection line and light-emitting area just to the semiconductor laser chip 340 of output window 350; Dielectric substrate 320 place also leads to pin 360, and pin 360 is for powering to semiconductor laser chip 340 by connection line.
In the present embodiment, the supporting construction 330 for support semiconductor chip of laser 340 is provided with above dielectric substrate 320, supporting construction 330 is configured to the straight quadrangular shape being positioned at dielectric substrate 320 center, and the side of straight quadrangular shape is evenly equipped with multiple semiconductor laser chip 340.
In the present embodiment, housing 310 upper end open place is configured with step groove, thus makes output window 350 preferably can embed housing 310 upper end open place.In addition, the material of output window 350 is flat glass material.
Embodiment 6
A kind of integrated laser chip is also provided in the present embodiment, the difference of itself and embodiment 5 is: supporting construction 330 adopts the ridge structure 150 of the multiple ring-types in embodiment 2, and the kind of semiconductor laser chip 340 and all identical with embodiment 2 with ridge structure 150 connected mode of multiple ring-type.
In addition, in the present embodiment, the material of output window 350 is high light-passing plastic material.
Embodiment 7
Also provide a kind of integrated laser chip in the present embodiment, the difference of itself and embodiment 6 is: the material of output window 350 is the glass material of surface through binary optical process.
Below be schematically described the present invention and execution mode thereof, this description does not have restricted, and shown in accompanying drawing is also one of embodiments of the present invention, and actual structure is not limited thereto.So, if those of ordinary skill in the art enlightens by it, when not departing from the invention aim, without creatively designing the frame mode similar to this technical scheme and embodiment, all should protection scope of the present invention be belonged to.
Claims (8)
1. integrated laser chip, it is characterized in that: comprise the housing (310) being configured to frame-shaped, housing (310) lower ending opening place is provided with dielectric substrate (320), and housing (310) upper end open place is provided with transparent output window (350); Dielectric substrate (320) place is laid with connection line, the upper square array of dielectric substrate (320) have be connected with connection line and light-emitting area just to the semiconductor laser chip (340) of output window (350); Dielectric substrate (320) place also leads to pin (360), and pin (360) is for powering to semiconductor laser chip (340) by connection line.
2. integrated laser chip according to claim 1, is characterized in that: dielectric substrate (320) top is provided with the supporting construction (330) for support semiconductor chip of laser (340).
3. integrated laser chip according to claim 2, is characterized in that: supporting construction (330) comprises the ridge structure of at least one ring-type, and the side of arbitrary ridge structure (150) is all symmetrically provided with semiconductor laser chip.
4. integrated laser chip according to claim 1, is characterized in that: the material of output window (350) is glass or high light-passing plastic material.
5. integrated laser chip according to claim 1, is characterized in that: the material of output window (350) is flat glass or the surface glass through binary optical process.
6., according to described integrated laser chip arbitrary in Claims 1 to 5, it is characterized in that: semiconductor laser chip comprises red light semiconductor laser chip, Green-emitting semiconductor laser chip and blue-light semiconductor laser chip.
7. integrated laser chip according to claim 6, is characterized in that: red light semiconductor laser chip, Green-emitting semiconductor laser chip and blue-light semiconductor laser chip adopt different pins (360) to power separately respectively.
8. integrated laser chip according to claim 7, is characterized in that: the power ratio of red light semiconductor laser chip, Green-emitting semiconductor laser chip and blue-light semiconductor laser chip is 1:0.86:0.52.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510631406.4A CN105186289A (en) | 2015-09-29 | 2015-09-29 | Integrated laser chip |
| CN201610455175.0A CN106558834A (en) | 2015-09-29 | 2016-06-21 | Integrated laser chip |
| CN201620620341.3U CN205724368U (en) | 2015-09-29 | 2016-06-21 | Integrated laser chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510631406.4A CN105186289A (en) | 2015-09-29 | 2015-09-29 | Integrated laser chip |
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| CN105186289A true CN105186289A (en) | 2015-12-23 |
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| CN201510631406.4A Withdrawn CN105186289A (en) | 2015-09-29 | 2015-09-29 | Integrated laser chip |
| CN201620620341.3U Expired - Fee Related CN205724368U (en) | 2015-09-29 | 2016-06-21 | Integrated laser chip |
| CN201610455175.0A Pending CN106558834A (en) | 2015-09-29 | 2016-06-21 | Integrated laser chip |
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| CN201620620341.3U Expired - Fee Related CN205724368U (en) | 2015-09-29 | 2016-06-21 | Integrated laser chip |
| CN201610455175.0A Pending CN106558834A (en) | 2015-09-29 | 2016-06-21 | Integrated laser chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113056851A (en) * | 2018-11-27 | 2021-06-29 | 索尼半导体解决方案公司 | Driving device and light emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105186289A (en) * | 2015-09-29 | 2015-12-23 | 北京为世联合科技有限公司 | Integrated laser chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1760849A4 (en) * | 2004-06-02 | 2010-08-25 | Panasonic Corp | Semiconductor laser device and method for fabricating same |
| JP2009194101A (en) * | 2008-02-13 | 2009-08-27 | Fuji Xerox Co Ltd | Plane emission-type semiconductor laser device and laser therapy equipment using the same |
| CN101755300B (en) * | 2008-05-21 | 2014-02-05 | 松下电器产业株式会社 | Projector |
| CN105186289A (en) * | 2015-09-29 | 2015-12-23 | 北京为世联合科技有限公司 | Integrated laser chip |
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2015
- 2015-09-29 CN CN201510631406.4A patent/CN105186289A/en not_active Withdrawn
-
2016
- 2016-06-21 CN CN201620620341.3U patent/CN205724368U/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113056851A (en) * | 2018-11-27 | 2021-06-29 | 索尼半导体解决方案公司 | Driving device and light emitting device |
| CN113056851B (en) * | 2018-11-27 | 2024-02-13 | 索尼半导体解决方案公司 | Driving device and light emitting device |
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| Publication number | Publication date |
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| CN106558834A (en) | 2017-04-05 |
| CN205724368U (en) | 2016-11-23 |
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