CN105070647B - Epitaxial wafer, extension piece preparation method and semiconductor devices - Google Patents
Epitaxial wafer, extension piece preparation method and semiconductor devices Download PDFInfo
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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Abstract
The invention discloses a kind of epitaxial wafers, which is characterized in that including substrate and epitaxial layer；The substrate is different with the doping type of the epitaxial layer；The substrate adulterates for p-type, and the epitaxial layer is n-type doping；Alternatively, the substrate is n-type doping, the epitaxial layer adulterates for p-type.The epitaxial wafer of the present invention, the production requirement of road device after warped degree meets effectively avoid integrated circuit suppliers exposure processing from defocusing, improve the yields and product quality of rear road device.Preferably meet rigors of the products such as Mobile Communications, information household appliances for extension product.
Description
Technical field
The present invention relates to a kind of epitaxial wafer and preparation method thereof and a kind of semiconductor devices including this kind of epitaxial wafer.
Background technology
On substrate grow one layer have certain requirements, single crystalline layer identical with Substrate orientation (i.e. epitaxial layer), like original
The crystal come has extended outwardly one section, therefore claims epitaxial growth.For semiconductor devices, the epitaxial layer of epitaxial wafer is needed to have
Perfect crystal structure, and the thickness to epitaxial layer, conduction type, resistivity and resistance homogeneity etc. have it is certain
It is required that.In addition to this, requirement of more and more products to epitaxial wafer geometric parameter is higher and higher, because of epitaxial wafer geometric parameter
Directly influence the processing of later product.Such as：The warped degree of epitaxial wafer is higher than 60 μm, and integrated circuit suppliers exposure can be caused to add
Work defocuses, and yield is low, and the warped degree of epitaxial wafer is bigger, defocuses more serious, and production yield is lower.The meter of the warped degree of epitaxial wafer
It is as follows to calculate formula：Warped degree=(a-b)/2.As shown in Figure 1, distance reference face 02 is farthest in 01 intermediate interface 011 of epitaxial wafer
The distance between point and the plane of reference 02 are a.As shown in Fig. 2, the epitaxial wafer 01 in Fig. 1 is overturn, 01 intermediate interface of epitaxial wafer
The distance between the nearest point in distance reference face 02 and the plane of reference 02 are b on 011.
The application of road device determines afterwards, and more and more circuits need to complete in extension on piece with electronic component,
Such as Power MOSFET, NMOS, CMOS and Super junction etc..As IC design is towards light, thin, short, small
And the development trend of power saving, the products such as Mobile Communications, information household appliances are effected the greatest economy energy consumption invariably, and extension product is wanted
Ask also constantly harsh.Therefore, improve epitaxial wafer geometric parameter, make epitaxial wafer be more applicable for more Hou Dao IC factories be processed into order to
The main problem that epitaxial wafer makes.
Epitaxial wafer is made of the main body of substrate and epitaxial layer, and element is identical, is silicon.Existing epitaxial wafer, is usually adopted
With incorporation foreign atom to improve electric conductivity, but substrate is identical as the doping type palpus of epitaxial layer, that is, is all p-type doping or same
For n-type doping.Because if as shown in figure 3, the doping type of substrate 1 and epitaxial layer 2 is different, adulterated in substrate and epitaxial layer
Atom is of different sizes, and dislocation is will produce on interface 3, and this dislocation, which will produce pulling force, causes epitaxial wafer to deform, and is formed as shown in Figure 4
Epitaxial wafer 01.In Fig. 4, the edge of epitaxial wafer 01 tilts, and presents bowl-shape when serious, and warped degree is up to 80 μm, causes integrated electricity
The exposure processing of road manufacturer seriously defocuses, and yield is extremely low.Therefore, the existing satisfactory epitaxial wafer of warped degree is substrate and outer
It is all the epitaxial wafer that n-type doping was adulterated or be all to p-type to prolong layer.
Invention content
Purpose of the invention is to overcome the shortcomings in the prior art, provides a kind of epitaxial wafer of low warped degree.
In order to achieve the above object, the invention is realized by the following technical scheme：
Epitaxial wafer, which is characterized in that including substrate and epitaxial layer；The doping type of the substrate and the epitaxial layer is not
Together；The substrate adulterates for p-type, and the epitaxial layer is n-type doping；Alternatively, the substrate is n-type doping, the epitaxial layer is P
Type adulterates.
Preferably, it is boron atom that the p-type, which adulterates adulterated atom,.
Preferably, the doping type of the boron atom is mixed to be overweight, doping concentration 9*1018~1*1020A/cm3。
Preferably, a concentration of 4.5*10 of the boron atom19~5.5*1019A/cm3。
Preferably, the foreign atom of the n-type doping is phosphorus atoms, arsenic atom, one kind in antimony atoms or arbitrary several
Kind.
Preferably, the doping type of the phosphorus atoms is heavily doped, doping concentration 8*1016~2*1017A/cm3。
Preferably, the thickness of the epitaxial layer is 1.5~150 μm.
Preferably, the thickness of the epitaxial layer is 18~50 μm.
Preferably, thickness is 645~675 μm or 745~775 μm.
The second object of the present invention is in order to overcome deficiency in the prior art, provide a kind of making side of above-mentioned epitaxial wafer
Method.
In order to achieve the above object, the invention is realized by the following technical scheme：
The production method of above-mentioned epitaxial wafer, which is characterized in that include the following steps:
A., one substrate is provided；Processing is doped to substrate, the substrate is made to form p-type doping or n-type doping；
B. grown epitaxial layer over the substrate；Processing is doped to the epitaxial layer, the epitaxial layer is made to form p-type
Doping or n-type doping；
C. after the completion of adulterating, high-temperature baking is carried out to the substrate and the epitaxial layer, baking temperature is 1100~1120
DEG C, baking time is 20~50s.
Preferably, the substrate is made using CZ methods.
Preferably, the grown epitaxial layer in the step B carries out in one chip epitaxial furnace；The one chip epitaxial furnace
Interior is normal pressure.
Preferably, in the step B, the epitaxial layer is grown using the method for chemical vapor deposition；Chemical vapor deposition
Product includes the following steps：It is reacted, is made on the substrate under 1040~1200 DEG C of hot environment using trichlorosilane and hydrogen
Generate the epitaxial layer.
Preferably, in the step B, trichlorosilane and hydrogen reaction are so that epitaxial layer described in the Grown
Meanwhile processing is doped to the epitaxial layer.
Preferably, after the completion of the step B, the temperature in the one chip epitaxial furnace is risen to 1100~1200 DEG C,
The step C is carried out in one chip epitaxial furnace, and high-temperature baking is carried out to the substrate and the epitaxial layer.
Preferably, in the step C, while high-temperature baking, it is passed through the hydrogen that flow is 50-150SLM.
The third object of the present invention is to provide a kind of semiconductor devices to overcome deficiency in the prior art.
In order to achieve the above object, the invention is realized by the following technical scheme：
Semiconductor devices, which is characterized in that including above-mentioned epitaxial wafer.
The epitaxial wafer of the present invention, the production requirement of road device, effectively avoids integrated circuit suppliers from exposing after warped degree meets
Processing defocuses, and improves the yields and product quality of rear road device.Preferably meet the products pair such as Mobile Communications, information household appliances
In the rigors of extension product.
The semiconductor devices that epitaxial wafer using the present invention makes, yields and product quality are high, preferably meet integrated
Circuit design is towards light, thin, short, small and power saving development trend.
Using epitaxial wafer production method provided by the invention, the epitaxial wafer that warped degree is less than 30 μm can be made, effectively reduce
Because epitaxial wafer substrate with epitaxial layer doping type difference caused by warped degree, to keep substrate and epitaxial layer doping type different
Epitaxial wafer warped degree meet after road device production requirement, effectively avoid integrated circuit suppliers exposure processing defocus, improve
The yields of the roads Liao Hou device.Meanwhile using epitaxial wafer production method provided by the invention, substrate and epitaxial layer can also be adulterated
The shape of the identical epitaxial wafer of type is modified, and further decreases the song of substrate and the identical epitaxial wafer of epitaxial layer doping type
Set-back makes substrate and the identical epitaxial wafer of epitaxial layer doping type better adapt to rear road device production, road device after raising
Quality.
Description of the drawings
Fig. 1 is the schematic diagram for measuring epitaxial wafer warped degree；
Fig. 2 is another schematic diagram for measuring epitaxial wafer warped degree；
Fig. 3 is the atomic diagram of the substrate epitaxial wafer different with epitaxial layer doping type；
Fig. 4 is the structural schematic diagram of traditional substrate epitaxial wafer different with epitaxial layer doping type；
Fig. 5 is the structural schematic diagram of the epitaxial wafer in embodiment 1.
Specific implementation mode
The present invention is described in detail below in conjunction with the accompanying drawings：
Embodiment 1
The production method of epitaxial wafer, which is characterized in that include the following steps:
A. use CZ methods that a substrate 1 is made.Processing is doped to substrate 1, substrate 1 is made to form p-type doping, p-type doping
Foreign atom be boron atom, the doping concentration of boron atom is 9*1018A/cm3。
B. substrate 1 is put into the one chip epitaxial furnace of model ASM E2000, makes to keep normal in one chip epitaxial furnace
Pressure.Then using in one chip epitaxial furnace trichlorosilane and hydrogen issue biochemical vapor deposition at 1040 DEG C, in substrate 1
On grow epitaxial layer 2 of the thickness at 1.5-150 μm, and control the overall thickness of epitaxial layer 2 and substrate 1 at 645-675 μm or
In the range of 745-775 μm.The thickness of the present embodiment preferred embodiment, epitaxial layer 2 is 18 μm, the overall thickness of epitaxial layer 2 and substrate 1
It is 675 μm.The epitaxial layer made of the one chip epitaxial furnace of model ASM E2000, the extension made compared with other epitaxial furnaces
Layer quality is high, has castering action to parameters such as the resistance value of epitaxial layer, thickness, resistance value uniformity, thickness evenness.To epitaxial layer
It is doped processing, so that epitaxial layer 2 is formed n-type doping, the foreign atom of n-type doping is phosphorus atoms, the doping concentration of phosphorus atoms
For 1*1017A/cm3.The doping treatment of the step in above-mentioned one chip epitaxial furnace with the grown epitaxial layer 2 in step A simultaneously
It carries out.
C. after the completion of adulterating, the temperature in one chip epitaxial furnace is increased to 1130 DEG C, and it is 100SLM's to be passed through flow
Hydrogen carries out substrate 1 and epitaxial layer 2 high-temperature baking of 50s, finally obtained epitaxial wafer 01 (as shown in Figure 5).
During the high-temperature baking of step C, respectively when being baked to 0s, 20s, 30s, 45s, 50s by epitaxial wafer 01
It is taken out out of one chip epitaxial furnace, and using epitaxial wafer after company warped degree=(a+b)/2 calculating bakings 20s, 30s, 45s, 50s
01 warped degree, concrete numerical value are as shown in table 1.
Embodiment 2
The production method of epitaxial wafer, which is characterized in that include the following steps:
A. use CZ methods that a substrate 1 is made.Processing is doped to substrate 1, substrate 1 is made to form p-type doping, p-type doping
Foreign atom be boron atom, the doping concentration of boron atom is 1*1020A/cm3。
B. substrate 1 is put into one chip epitaxial furnace, makes to keep normal pressure in one chip epitaxial furnace.Then it utilizes outside one chip
The trichlorosilane and hydrogen prolonged in stove issues biochemical vapor deposition at 1200 DEG C, to grow thickness in 1.5- on substrate 1
150 μm of epitaxial layer 2, and the overall thickness of control epitaxial layer 2 and substrate 1 is in the range of 645-675 μm or 745-775 μm.This
The thickness of embodiment preferred embodiment, epitaxial layer 2 is 50 μm, and the overall thickness of epitaxial layer 2 and substrate 1 is 745 μm.To epitaxial layer 2 into
Row doping treatment makes epitaxial layer 2 form n-type doping, and the foreign atom of n-type doping is arsenic atom, and the doping concentration of arsenic atom is
8*1016A/cm3.The doping treatment of the step in above-mentioned one chip epitaxial furnace with the grown epitaxial layer 2 in step A simultaneously into
Row.
C. after the completion of adulterating, the temperature in one chip epitaxial furnace is adjusted to 1100 DEG C, and is passed through the hydrogen that flow is 50SLM
Gas carries out substrate 1 and epitaxial layer 2 high-temperature baking of 50s, finally obtained epitaxial wafer 01.
During the high-temperature baking of step C, respectively when being baked to 0s, 20s, 30s, 45s, 50s by epitaxial wafer 01
It is taken out out of one chip epitaxial furnace, and using epitaxial wafer after company warped degree=(a+b)/2 calculating bakings 20s, 30s, 45s, 50s
01 warped degree, concrete numerical value are as shown in table 1.
Embodiment 3
The production method of epitaxial wafer, which is characterized in that include the following steps:
A. use CZ methods that a substrate 1 is made.Processing is doped to substrate 1, substrate 1 is made to form p-type doping, p-type doping
Foreign atom be boron atom, the doping concentration of boron atom is 4.5*1019A/cm3。
B. substrate 1 is put into one chip epitaxial furnace, makes to keep normal pressure in one chip epitaxial furnace.Then it utilizes outside one chip
The trichlorosilane and hydrogen prolonged in stove issues biochemical vapor deposition in 1130 DEG C of environment, is existed with growing thickness on substrate 1
1.5-150 μm of epitaxial layer 2, and control range of the overall thickness of epitaxial layer 2 and substrate 1 at 645-675 μm or 745-775 μm
It is interior.The thickness of the present embodiment preferred embodiment, epitaxial layer 2 is 1.5 μm, and the overall thickness of epitaxial layer 2 and substrate 1 is 775 μm.To extension
Layer 2 is doped processing, so that epitaxial layer 2 is formed n-type doping, the foreign atom of n-type doping is antimony atoms, and the doping of antimony atoms is dense
Degree is 2*1017A/cm3.The doping treatment of the step is same with the grown epitaxial layer 2 in step A in above-mentioned one chip epitaxial furnace
Shi Jinhang.
C. after the completion of adulterating, the temperature in one chip epitaxial furnace is increased to 1150 DEG C, and it is 150SLM's to be passed through flow
Hydrogen carries out substrate 1 and epitaxial layer 2 high-temperature baking of 50s, finally obtained epitaxial wafer 01.
During the high-temperature baking of step C, respectively when being baked to 0s, 20s, 30s, 45s, 50s by epitaxial wafer 01
It is taken out out of one chip epitaxial furnace, and using epitaxial wafer after company warped degree=(a+b)/2 calculating bakings 20s, 30s, 45s, 50s
01 warped degree, concrete numerical value are as shown in table 1.
Embodiment 4
The production method of epitaxial wafer, which is characterized in that include the following steps:
A. use CZ methods that a substrate 1 is made.Processing is doped to substrate 1, substrate 1 is made to form p-type doping, p-type doping
Foreign atom be boron atom, the doping concentration of boron atom is 5.5*1020A/cm3。
B. substrate 1 is put into one chip epitaxial furnace, makes to keep normal pressure in one chip epitaxial furnace.Then it utilizes outside one chip
The trichlorosilane and hydrogen prolonged in stove issues biochemical vapor deposition at 1150 DEG C, to grow thickness in 1.5- on substrate 1
150 μm of epitaxial layer 2, and the overall thickness of control epitaxial layer 2 and substrate 1 is in the range of 645-675 μm or 745-775 μm.This
The thickness of embodiment preferred embodiment, epitaxial layer 2 is 150 μm, and the overall thickness of epitaxial layer 2 and substrate 1 is 650 μm.To epitaxial layer 2 into
Row doping treatment.Epitaxial layer 2 is set to form n-type doping, the foreign atom of n-type doping is antimony atoms and phosphorus atoms, antimony atoms and phosphorus
It is 1*10 that the doping concentration of atom, which neutralizes,17A/cm3.The doping treatment of the step in above-mentioned one chip epitaxial furnace in step A
Grown epitaxial layer 2 be carried out at the same time.
C. after the completion of adulterating, the temperature in one chip epitaxial furnace is adjusted to 1130 DEG C, and it is 120SLM's to be passed through flow
Hydrogen carries out substrate 1 and epitaxial layer 2 high-temperature baking of 50s, finally obtained epitaxial wafer 01.
During the high-temperature baking of step C, respectively when being baked to 0s, 20s, 30s, 45s, 50s by epitaxial wafer 01
It is taken out out of one chip epitaxial furnace, and using epitaxial wafer after company warped degree=(a+b)/2 calculating bakings 20s, 30s, 45s, 50s
01 warped degree, concrete numerical value are as shown in table 1.
Embodiment 5
The production method of epitaxial wafer, which is characterized in that include the following steps:
A. use CZ methods that a substrate 1 is made.Processing is doped to substrate 1, substrate 1 is made to form n-type doping, n-type doping
Foreign atom be phosphorus atoms, the doping concentrations of phosphorus atoms is 5*1019A/cm3。
B. substrate 1 is put into one chip epitaxial furnace, makes to keep normal pressure in one chip epitaxial furnace.Then it utilizes outside one chip
The trichlorosilane and hydrogen prolonged in stove issues biochemical vapor deposition in 1050 DEG C of environment, is existed with growing thickness on substrate 1
1.5-150 μm of epitaxial layer 2, and control range of the overall thickness of epitaxial layer 2 and substrate 1 at 645-675 μm or 745-775 μm
It is interior.The thickness of the present embodiment preferred embodiment, epitaxial layer 2 is 38 μm, and the overall thickness of epitaxial layer 2 and substrate 1 is 645 μm.It is mixed
Live together reason.Epitaxial layer 2 is set to form p-type doping, the foreign atom of p-type doping is boron atom, and the doping concentration of boron atom is 1.5*
1017A/cm3.The doping treatment of the step is carried out at the same time in above-mentioned one chip epitaxial furnace with the grown epitaxial layer 2 in step A.
C. after the completion of adulterating, the temperature in one chip epitaxial furnace is increased to 1120 DEG C, and it is 110SLM's to be passed through flow
Hydrogen carries out substrate 1 and epitaxial layer 2 high-temperature baking of 50s, finally obtained epitaxial wafer 01.
During the high-temperature baking of step C, respectively when being baked to 0s, 20s, 30s, 45s, 50s by epitaxial wafer 01
It is taken out out of one chip epitaxial furnace, and using epitaxial wafer after company warped degree=(a+b)/2 calculating bakings 20s, 30s, 45s, 50s
01 warped degree, concrete numerical value are as shown in table 1.
Table 1
As shown in Table 1, it is whether p-type doping, the epitaxial wafer (embodiment 1-4) that epitaxial layer is n-type doping to substrate, goes back
It is the epitaxial wafer (embodiment 5) that substrate is n-type doping, epitaxial layer is p-type doping, through high-temperature baking under hydrogen environment, treated
The warped degree for the epitaxial wafer that the warped degree of epitaxial wafer does not toast reduces.Epitaxial wafer is being connected with hydrogen after being doped processing
30s is toasted under 1100~1200 DEG C of hot environment, warped degree is maintained in 14~18 μ ms；45s is toasted, warped degree is kept
In 8~12 μ ms；50s is toasted, warped degree is maintained at less than in 7 μ ms.I.e. in the baking time of 50s, when baking
Between it is longer, the value that the warped degree of epitaxial wafer reduces is bigger.
It can be seen that using epitaxial wafer production method provided by the invention, can effectively reduce because of the substrate of epitaxial wafer and outer
Prolong warped degree caused by layer doping type difference, the warped degree of the epitaxial wafer to keep substrate different with epitaxial layer doping type is full
The production requirement of the roads Zu Hou device effectively avoids integrated circuit suppliers exposure processing from defocusing, improves the yields of rear road device.
It, also can be to substrate and the identical epitaxial wafer of epitaxial layer doping type meanwhile using epitaxial wafer production method provided by the invention
Shape is modified, and is further decreased the warped degree of substrate and the identical epitaxial wafer of epitaxial layer doping type, is made substrate and extension
The identical epitaxial wafer of layer doping type better adapts to rear road device production, the quality of road device after raising.
Embodiment in the present invention is only used for that the present invention will be described, and is not construed as limiting the scope of claims limitation,
Other substantially equivalent replacements that those skilled in that art are contemplated that, all fall in the scope of protection of the present invention.
Claims (4)
1. a kind of production method of epitaxial wafer, which is characterized in that include the following steps:
A., one substrate is provided；Processing is doped to substrate, the substrate is made to form p-type doping or n-type doping；
B. grown epitaxial layer over the substrate；Processing is doped to the epitaxial layer, the epitaxial layer is made to form p-type doping
Or n-type doping；
C. after the completion of adulterating, high-temperature baking is carried out to the substrate and the epitaxial layer, baking temperature is 1100~1120 DEG C, is dried
The roasting time is 20~50s；
In the step C, while high-temperature baking, it is passed through the hydrogen that flow is 50-150SLM.
2. the production method of epitaxial wafer according to claim 1, which is characterized in that the foreign atom of the n-type doping
For one kind in phosphorus atoms, arsenic atom, antimony atoms or arbitrary several；The doping type of the phosphorus atoms is heavily doped, doping concentration
For 8*1016~2*1017A/cm3。
3. the production method of epitaxial wafer according to claim 1, which is characterized in that the p-type adulterates adulterated original
Son is boron atom, and the doping type of boron atom is mixed to be overweight, doping concentration 9*1018~1*1020A/cm3。
4. semiconductor devices, which is characterized in that the epitaxial wafer prepared including claim 1-3 any one of them methods.
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| CN109003884A (en) * | 2018-07-04 | 2018-12-14 | 上海晶盟硅材料有限公司 | Preparation method, epitaxial wafer and the semiconductor devices of epitaxial wafer without back side silicon single crystal |
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| US5261999A (en) * | 1991-05-08 | 1993-11-16 | North American Philips Corporation | Process for making strain-compensated bonded silicon-on-insulator material free of dislocations |
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