CN105040092A - Device for drawing monocrystalline silicon downward and drawing method - Google Patents
Device for drawing monocrystalline silicon downward and drawing method Download PDFInfo
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- CN105040092A CN105040092A CN201510528359.0A CN201510528359A CN105040092A CN 105040092 A CN105040092 A CN 105040092A CN 201510528359 A CN201510528359 A CN 201510528359A CN 105040092 A CN105040092 A CN 105040092A
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Abstract
The invention relates to a device for drawing monocrystalline silicon downward and a drawing method. The device is formed by a silicon melting device, heaters, a crystallizer, a crystal supporting device, and the like. The drawing method is characterized in that continuously fed molten silicon is continuously crystallized in the crystallizer, and continuously generated crystal bars are continuously led out downward under the support of the crystal supporting device. The device is low in price. The monocrystalline silicon prepared by the method has the advantages of good quality, low power consumption and low cost and can be used for preparing square crystal bars.
Description
Technical field
The present invention relates to a kind of device and drawing of downward drawn monocrystalline silicon
Background technology
Present multiplex vertical pulling method drawn monocrystalline silicon: after silicon raw material is melted in crucible by polysilicon, molten silicon turns the condition turned with crucible at crystalline substance under, one side crystallization one side upwards lift becomes single crystal rod.
Above-mentioned pulling of silicon single crystal power consumption is large, and cost is higher
Two-step approach is melted in CN1095505C vertical pulling-district, first pulls out single crystal rod, and the method that Zai Yong district melts founds single crystal rod, and this monocrystalline is used as solar cell, allegedly its photoelectric transformation efficiency high (be about 24-26%, theoretical limit is 28%).
Melt silicon single crystal prepared by two-step approach with above-mentioned vertical pulling-district, its device is expensive, and production cost is higher, and technological process is also wayward.
Summary of the invention
The object of the invention is to find a kind of light-optoelectronic conversion ratio is higher, device is cheap, production cost the is lower device preparing silicon single crystal and preparation method.
The present invention need not aforesaid vertical pulling or two-step approach combinations rod, employing is different from zone melting and melts the type of heating of silicon but be similar to zone melting method crystallization principle, direct polysilicon grain is raw material, molten silicon is in crystallizer above crystal bar after crystallization, ask brilliant device to support lower extraction by below, namely a step makes the crystal bar being similar to zone melting method effect.
Drawing of the present invention is: the molten silicon of continuous feeding, and--continuous crystallisation in crystallizer--its crystal bar generated continuously--is drawn continuously downwards under the brilliant device supporting of holder.
Device of the present invention forms by melting the brilliant device of silicon device, well heater, crystallizer and holder etc.
The step of this drawing is:
1) the single crystal seed sheet base, in primary heater heating crystalline device, on the brilliant dish of holder;
2), silicon grain is melt into liquid silicon in molten silicon device;
3), liquid silicon starts to continuously flow in crystallizer;
4), the mode of well heater continuation radiation heat transfer controls the temperature of liquid silicon accurately;
5) heat shield under crystal seed, is shifted out;
6), liquid silicon recrystallize on crystal seed sheet base;
7) crystal bar that, crystallization generates is drawn downwards continuously by the brilliant device of the holder below crystallizer.
This molten silicon device a kind ofly tungsten filament is embedded in the plate-like containing thermal insulation layer in nitride ceramics or cup-shaped electricity heating container.
This calorifier is that tungsten filament is embedded in nitride or oxide ceramics by one, containing the tabular electricity heat object of thermal insulation layer.
This crystallizer, be a kind ofly to be made up of zirconium white or nitride ceramics, to become horn-like downwards, the object of the annular or square frame-shaped in garden.
This crystallization device one has the brilliant dish of holder, under have the lifting device of hoisting appliance.
Whether the center of this well heater, is provided with one and supplies in turn: 1), for infrared imager observe crystal seed sheet upper surface and melt; 2), molten silicon face temperature is tested for infrared temperature instrument; 3), for the molten silicon face position of laser ranger test; The hole that three shares.
Advantage of the present invention:
1, crystallizer of the present invention:
1), material more better than the anti-molten silicon wetting property of silicon nitride is adopted, as zirconium white or aluminium nitride or boron nitride or their complex phase ceramic make crystallizer.Because molten silicon is nonwettable to them, therefore the silicon crystal after crystallization is easily separated with crystallizer.
2), the internal surface of this crystallizer is up-small and down-big tubaeform, is beneficial to downward seeding.
3), adopt ceramic crystallizer, during high temperature, Strong degree is large and without softening temperature, be out of shape little, and the erosion of molten silicon is very micro-in addition, and this can realize continuous crystal-pulling.
2, thermal field of the present invention:
1), molten silicon is arranged on the top of crystal bar, the temperature in molten silicon is that upper height bends down, the thermal convection under now supreme in molten silicon;
2), the temperature of molten silicon upper surface is controlled in the temperature a little more than silicon fusing point, having a narrow range of temperature in its horizontal plane, this measure except slightly can energy-conservation except, the system that is beneficial to presses down the convection current in molten silicon inner horizontal.
Above 2 points, can create the crystallization condition be bordering on without convection current, be beneficial to the monocrystalline growing high-quality.
3) even if the crystal bar of bottom has rotation, but crystallizer and crystal bar synchronous axial system, in molten silicon, there is no the shearing force that the relative movement such as molten silicon internal cause crystalline substance in vertical pulling method or zone melting method turns cause.
Therefore the crystallization condition of this law is likely no less than vertical pulling method and zone melting method.
3, the present invention does not need to use quartz crucible again, fundamentally can eliminate use quartz crucible+carbonaceous thermal field component and cause oxygen contamination to silicon single crystal.
4, becoming in the process of silicon single crystal by silicon material, requisite energy consumption is that silicon is raised to the change of the heat content before fusing point and the latent heat of fusion by normal temperature.The two is added, and amounts to into electric energy and is about 1.9kwh/kg,
The actual hear rate of existing monocrystalline is many at 30-40kwh/kg or more.
Photovoltaic industry entry criteria requires that the energy consumption of monocrystalline is less than: 45kwh/kg.
Crystal pulling hear rate of the present invention can be less than 5.0kwh/kg.
This hear rate can not higher than the ingot casting method of on-monocrystalline.
5, the present invention adopts potette to make crystallizer, and its Sidewall Height is less, and hot-forming ceramic plate can be adopted shaping with drawing division.Existing profile, cannot with hot-forming as the ceramic crucible of quartz crucible.
Hot-forming pottery is all best in a lot of performance.
6, the shift in position of crystal plane of the present invention in thermal field is very little, and its crystallization condition is highly stable, is highly advantageous to and controls to grow stable monocrystalline.
7, the present invention can start crystal pulling after only needing melting several kilograms of silicon material.The molten silicon time in existing operation can be reduced; .
8, because melting without the large temperature difference in silicon, therefore need not turn with contrary crucible by crystalline substance turn, can square crystal rod be grown.
9, this law produce crystal bar, without stub bar and be bordering on without expect tail.
10, the long brilliant speed of zone melting method can reach 2mm/min, and the long brilliant speed of this law can be not less than zone melting method, and existing vertical pulling method rarely exceeds 1mm/min; The brilliant speed of length of this law also can higher than ingot casting method.
11, the price of this device is lower than existing single crystal growing furnace, and farther is the zone melting furnace of single crystal growing furnace four times lower than import price.
12, the crystal bar prepared of present method, its composition can be accomplished very even in axis and radial direction.
13, the present invention is by directly observing the melted state at the sheet injustice place of seed surface with video camera, foretells its surface temperature of monitoring with infrared thermometer simultaneously, intuitively objectively again can judge seed surface whether melting accordingly.
14, the cross dimensions of crystal bar can close to ingot casting method.And the crystal bar that size is large, the edge effect of thermal field is less.
15, crystal seed sheet can Reusability.
This law is better than vertical pulling method, zone melting method and ingot casting method, and vertical pulling method, zone melting method and ingot casting method can be replaced to prepare silicon single crystal.
Accompanying drawing explanation
Accompanying drawing 1 is the schematic diagram of this device
In figure: (1) is primary heater; (2) be molten silicon well heater; (3) be molten silicon device; (4) be silicon grain and the silicon melted; (5) spy hole of molten silicon to be crystallized; (6), crystallizer; (7) molten silicon, to be crystallized; (8) crystal bar, after crystallization; (9), crystal seed; (10), auxiliary calorifier; (11) brilliant plate and the brilliant device of holder, is held in the palm;
Concrete enforcement
Device of the present invention forms by melting silicon device (2+6), primary heater (1), crystallizer (4) and crystallization device (11) etc.
Drawing of the present invention is: the molten silicon of continuous feeding, and--continuous crystallisation in crystallizer--its crystal bar generated continuously--is drawn continuously downwards under the brilliant device supporting of holder.
Solid state si is melt into liquid silicon (4) in molten silicon device, until after single crystal seed sheet base (9) the upper surface melting in crystallizer (6), on the brilliant dish (11) of holder, liquid silicon flows in crystallizer (6), the mode of primary heater (1) continuation radiation heat transfer controls the temperature of liquid silicon (7) accurately, liquid silicon is at the upper recrystallize of crystal seed sheet base (9), and the crystal bar (8) of generation is drawn downwards continuously by the brilliant device (11) of the holder below crystallizer.
The step of this drawing is:
1) the single crystal seed sheet base, in primary heater heating crystalline device, on the brilliant dish of holder;
2), silicon grain is melt into liquid silicon in molten silicon device;
3), liquid silicon starts to continuously flow in crystallizer;
4), the mode of well heater continuation radiation heat transfer controls the temperature of liquid silicon accurately;
5) heat shield under crystal seed, is shifted out;
6), liquid silicon recrystallize on crystal seed sheet base;
7) crystal bar that, crystallization generates is drawn downwards continuously by the brilliant device of the holder below crystallizer.
This molten silicon device a kind ofly tungsten filament is embedded in the plate-like containing thermal insulation layer in nitride ceramics or cup-shaped electricity heating container.
This calorifier is that tungsten filament is embedded in nitride or oxide ceramics by one, containing the tabular electricity heat object of thermal insulation layer.
This crystallizer, be a kind ofly to be made up of zirconium white or nitride ceramics, to become horn-like downwards, the object of the annular or square frame-shaped in garden.
This crystallization device one has the brilliant dish of holder, under have the lifting device of hoisting appliance.
Whether the center of this primary heater, is provided with one and supplies in turn: 1), for infrared imager observe crystal seed sheet upper surface and melt; 2), molten silicon face temperature is tested for infrared temperature instrument; 3), for the molten silicon face position of laser ranger test; The hole (5) that three shares.
Claims (7)
1. the device of downward drawn monocrystalline silicon and a drawing, is characterized in that:
This drawing is: the molten silicon of continuous feeding, and--continuous crystallisation in crystallizer--its crystal bar generated continuously--is drawn continuously downwards under the brilliant device supporting of holder;
This device forms by melting the brilliant device of silicon device, well heater, crystallizer and holder etc.;
The step of this drawing crystal pulling is:
1) the single crystal seed sheet base, in primary heater heating crystalline device, on the brilliant dish of holder;
2), silicon grain is melt into liquid silicon in molten silicon device;
3), the upper surface melting of single crystal seed sheet base time, liquid silicon starts to continuously flow in crystallizer;
4), the mode of well heater continuation radiation heat transfer controls the temperature of liquid silicon accurately;
5) heat shield under crystal seed, is shifted out;
6), liquid silicon recrystallize on crystal seed sheet base;
7) crystal bar that, crystallization generates is drawn downwards continuously by the brilliant device of the holder below crystallizer.
2., according to device and the drawing of a claim 1 downward drawn monocrystalline silicon, it is characterized in that:
1), this well heater maintains static dynamic; And the brilliant device of crystallizer and holder can synchronous axial system; Hold in the palm brilliant device in addition to being rotatable, also move up and down;
2), the present invention also can be the brilliant device of holder be fixing, and well heater, molten silicon device synchronously move up together with crystallizer.
3. according to device and the drawing of a claim 1 downward drawn monocrystalline silicon, it is characterized in that: this molten silicon device, is a kind ofly tungsten filament is embedded in the plate-like containing thermal insulation layer in nitride ceramics or cup-shaped electricity heating container.
4. according to device and the drawing of a claim 1 downward drawn monocrystalline silicon, it is characterized in that: this calorifier, is that tungsten filament is embedded in nitride ceramics by one, containing the tabular electricity heat object of thermal insulation layer.
5., according to device and the drawing of a claim 1 downward drawn monocrystalline silicon, it is characterized in that: this crystallizer, be a kind ofly to be made up of zirconium white or nitride ceramics, inner surface in downwards horn-like, garden is annular or shaped as frame object square in square frame-shaped or outer garden.
6. according to device and the drawing of a claim 1 downward drawn monocrystalline silicon, it is characterized in that: crystallization device of the present invention, is one has the brilliant dish of holder, under have the lifting device of hoisting appliance.
7. according to device and the drawing of a claim 1 downward drawn monocrystalline silicon, it is characterized in that: at the center of well heater, be provided with one and supply in turn: 1), whether infrared imager observe crystal seed sheet upper surface and melt; 2), molten silicon face temperature tested by infrared temperature instrument; 3), the molten silicon face position of laser ranger test; The hole that three shares.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510528359.0A CN105040092A (en) | 2015-08-19 | 2015-08-19 | Device for drawing monocrystalline silicon downward and drawing method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510528359.0A CN105040092A (en) | 2015-08-19 | 2015-08-19 | Device for drawing monocrystalline silicon downward and drawing method |
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| CN105040092A true CN105040092A (en) | 2015-11-11 |
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| CN201510528359.0A Pending CN105040092A (en) | 2015-08-19 | 2015-08-19 | Device for drawing monocrystalline silicon downward and drawing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117385447A (en) * | 2023-12-11 | 2024-01-12 | 内蒙古沐邦新材料有限公司 | Suspension zone-melting directional solidification device and method thereof |
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2015
- 2015-08-19 CN CN201510528359.0A patent/CN105040092A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117385447A (en) * | 2023-12-11 | 2024-01-12 | 内蒙古沐邦新材料有限公司 | Suspension zone-melting directional solidification device and method thereof |
| CN117385447B (en) * | 2023-12-11 | 2024-02-23 | 内蒙古沐邦新材料有限公司 | Suspension zone-melting directional solidification device and method thereof |
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Application publication date: 20151111 |