CN105022441B - A kind of temperature independent integrated circuit current reference source - Google Patents
A kind of temperature independent integrated circuit current reference source Download PDFInfo
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- CN105022441B CN105022441B CN201410182801.4A CN201410182801A CN105022441B CN 105022441 B CN105022441 B CN 105022441B CN 201410182801 A CN201410182801 A CN 201410182801A CN 105022441 B CN105022441 B CN 105022441B
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Abstract
The present invention proposes a kind of temperature independent integrated circuit current reference source, and described integrated circuit current reference source comprises: the first current generating circuit, the second current generating circuit and electric current summing circuit；First current generating circuit, is used for producing negative temperature parameter current；Second current generating circuit, is used for producing positive temperature coefficient electric current；The outfan of the first current generating circuit is connected with an input of electric current summing circuit, the outfan of the second current generating circuit is connected with another input of electric current summing circuit, this electric current summing circuit sets ratio superposition for the electric current the first current generating circuit and the second current generating circuit each exported in one, and the output electric current that it produces is temperature independent integrated circuit current reference output electric current.
Description
Technical field
The present invention relates to analogue layout field, relate more specifically to a kind of employing electric current superimposing technique and realize
Temperature independent integrated circuit current reference source.
Background technology
Current reference source is a conventional module in Analogous Integrated Electronic Circuits, be widely used in various Analogous Integrated Electronic Circuits and
In analog/mixed signal integrated circuit, including data converter, switched-capacitor circuit, monolithic image sensor, micro-
Mechatronic Systems (MEMS) interface circuit etc..
Traditional temperature independent current reference source is all to be converted to defeated by a resistance on the basis of voltage source
Going out electric current, Fig. 1 is a kind of traditional temperature independent current reference source.This circuit by operational amplifier and
The output voltage V independent of temperature that resistance produces bandgap voltage referenceREFBe converted to reference current.Although band
Gap reference voltage VREFThere is the advantage independent of technique, voltage and temperature, but output electric current the most also to be amplified
Device imbalance and the impact of resistance-temperature characteristic, so the reference current that this structure produces cannot meet low-temperature coefficient
Characteristic.In the thermally sensitive Application of integrated circuit that some is high-end, these conventional current a reference sources cannot expire
Its demand of foot.
Summary of the invention
It is an object of the invention to, for solving the technical problem that above-mentioned conventional current a reference source temperature coefficient is difficult to reduce,
Electric current summation technology is used to produce temperature independent current reference.
For achieving the above object, the invention provides a kind of temperature independent integrated circuit current reference source, described
Integrated circuit current reference source comprises: first current generating circuit the 301, second current generating circuit 302 and electric current
Summing circuit 303；
Described first current generating circuit 301, raises and the electric current that reduces with temperature for producing, and is i.e. used for producing negative
Temperature coefficient current；
Described second current generating circuit 302, for producing the electric current raised and raise with temperature, i.e. for just producing
Temperature coefficient current；
The outfan of described first current generating circuit 301 and an input phase of described electric current summing circuit 303
Even, the outfan of described second current generating circuit 302 and another input of described electric current summing circuit 303
Being connected, this electric current summing circuit 303 is for by the first current generating circuit 301 and the second current generating circuit 302
Each the electric current of output sets ratio superposition in one, and the outfan of described electric current summing circuit 303 is and temperature
The outfan of unrelated integrated circuit current reference source.
Optionally, above-mentioned first current generating circuit 301 comprises: the first p-type current mirror, the first N-type current mirror,
Resistance R1 and the first PNP type triode；
Described first p-type current mirror loads each other with described first N-type current mirror, thus forms automatic biasing structure；
Between source class and the negative supply of the outlet tube that described resistance R1 is connected to described first N-type current mirror；
The emitter stage of described first PNP type triode is connected to the source class of the input pipe of described first N-type current mirror,
And the base stage of this first PNP type triode and colelctor electrode connect described negative supply；
Wherein, described first PNP type triode uses NPN type triode or diode in place.
Optionally, above-mentioned second current generating circuit 302 comprises: the second p-type current mirror, the second N-type current mirror,
Resistance R2, the second PNP type triode and the 3rd PNP type triode；
Described second p-type current mirror and the second N-type current mirror load each other, thus form automatic biasing structure；
Described resistance R2 is connected to source class and second PNP type triode of the outlet tube of described second N-type current mirror
Emitter stage between, base stage and the colelctor electrode of the second PNP type triode connect negative supply；3rd PNP type triode
Emitting stage is connected to the source class of the input pipe of described second N-type current mirror, the colelctor electrode of the 3rd PNP type triode
It is connected to negative supply with base stage；
Wherein, described second PNP type triode and the 3rd PNP type triode are all or one of them uses NPN
Type audion or diode in place.
Optionally, above-mentioned first p-type current mirror and the first N-type current mirror use cascode structure；
Described second p-type current mirror and the second N-type current mirror use cascode structure.
Optionally, above-mentioned electric current summing circuit 303 comprises: two p-type metal-oxide-semiconductors, said two p-type MOS
The grid of pipe is connected with described first p-type current mirror and the second p-type current mirror respectively, and said two p-type MOS
The drain electrode short circuit of pipe forms the outfan of electric current summing circuit.
Optional, above-mentioned first p-type current mirror and the second p-type current-mirror structure are identical.
Optionally, above-mentioned first p-type current mirror comprises: the first pmos type transistor and the second pmos type crystal
Pipe；Described first N-type current mirror comprises: the first nmos type transistor and the second nmos type transistor；
The source class of the first PMOS transistor connects positive supply vdd, the grid of this first PMOS transistor and drain electrode
It is connected in A node；The grid of the second PMOS transistor is connected with described node A, the 2nd PMOS crystal
The source class of pipe is connected to described positive supply vdd；
The drain electrode of the first nmos pass transistor connects the drain electrode of described first PMOS transistor, a NMOS
The grid of transistor connects the grid of the second nmos pass transistor, and the source class of the first nmos pass transistor connects described electricity
One end of resistance R1；
The grid of the second nmos pass transistor and drain electrode are connected in node B, the drain electrode of described second PMOS transistor
Being connected with described node B, the source class of this second nmos pass transistor connects the emitter stage of PNP type triode Q1,
Base stage and the colelctor electrode of this PNP type triode Q1 connect negative supply.
Optionally, above-mentioned first current generating circuit 301 uses negative temperature based on operational amplifier imaginary short characteristic
Coefficient current produces circuit；Described second current generating circuit 302 uses based on operational amplifier imaginary short characteristic
Positive temperature coefficient current generating circuit.
Compared with prior art, the present invention's it is a technical advantage that:
The present invention by by negative temperature parameter current and the superposition generation by a certain percentage of positive temperature coefficient electric current and temperature without
The reference current closed.The present invention uses the CMOS integrated circuit technology of main flow and bipolar integrated circuit technique to obtain
Current reference independent of technique, voltage and temperature.
Accompanying drawing explanation
Fig. 1 is the current reference source circuit schematic diagram of prior art；
Fig. 2 is the current reference source structural representation that the electric current summation type of the present invention is temperature independent；
Fig. 3 is the circuit diagram of the specific embodiment be given based on temperature independent current reference source structural representation；
Fig. 4-a produces circuit by a kind of negative temperature parameter current that the embodiment of the present invention is used, and (that is, the first electric current produces
Raw circuit) circuit diagram；
(that is, the second electric current produces a kind of positive temperature coefficient current generating circuit that Fig. 4-b is used by the embodiment of the present invention
Raw circuit) circuit diagram.
Detailed description of the invention
Below by accompanying drawing embodiment, technical scheme is described in further detail.
In the examples below the first named negative temperature parameter current of current generating circuit is produced circuit, by second
Current generating circuit named positive temperature coefficient current generating circuit.
The temperature independent current reference source that the present invention provides is as in figure 2 it is shown, include: negative temperature parameter current is produced
Raw circuit ICTAT, positive temperature coefficient current generating circuit IPTATAnd electric current summing circuit ITOTAL, and each circuit
Annexation such as Fig. 2.
As it is shown on figure 3, current reference source circuit temperature independent in the present embodiment includes: negative temperature parameter current
Produce circuit 301, positive temperature coefficient current generating circuit 302 and electric current summing circuit 303.
Negative temperature parameter current produces circuit 301 and farther includes as depicted in fig. 4-a: two PMOS MP1 and
MP2 (composition p-type current mirror 401), two NMOS tube MN1 and MN2 (composition N-type current mirror 402),
One resistance R1 and PNP type triode Q1.The annexation of each device is as follows: PMOS MP1
Source class be connected to positive supply vdd, grid be connected to its drain electrode and be connected with the grid of PMOS MP2, MP2
Source class be connected to vdd, MP1 and MP2 and define p-type current mirror, the drain electrode of NMOS tube MN1 connects PMOS
The drain electrode of pipe MP1, the grid of MN1 connects the grid of MN2, and the source class of MN1 connects one end of resistance R1,
Another termination negative supply vss of R1, the grid of NMOS tube MN2 connects its drain electrode and PMOS MP2
Drain electrode is connected, and the source class of MN2 connects the emitter stage of PNP type triode Q2, and base stage and the colelctor electrode of Q2 meet vss,
MN1 and MN2 defines N-type current mirror, N-type current mirror and p-type current mirror and connects into automatic biasing structure.MP1
The p-type mirror currents ratio constituted with MP2 is the N-type mirror currents ratio that 1:1, MN1 and MN2 are constituted
It is 1:1.
Positive temperature coefficient current generating circuit 302 as shown in Fig. 4-b farther includes: two PMOS MP4
With MP5 (composition p-type current mirror 401), two NMOS tube MN3 and MN4 (composition N-type current mirror 402),
One resistance R2 and two PNP type triode Q2, Q3.The annexation of each device is as follows: PMOS
The source class of MP4 is connected to vdd, and grid connects its drain electrode and is connected with the grid of PMOS MP5, the source of MP5
Level is connected to vdd, MP4 and MP5 and defines p-type current mirror, and the drain electrode of NMOS tube MN3 connects MP4's
Drain electrode, the grid of MN3 connects the grid of NMOS tube MN4, and the source class of MN3 connects one end of resistance R2,
The other end of R2 connects the emitter stage of PNP type triode Q2, and the base stage of Q2 and colelctor electrode connect vss, NMOS tube
The grid of MN4 connects its drain electrode and is connected with the drain electrode of MP5, and the source class of MN4 connects PNP type triode Q3
Emitter stage, the base stage of Q3 and colelctor electrode meet vss, MN3 and MN4 and define N-type current mirror, N-type electric current
Mirror and p-type current mirror connect into automatic biasing structure.The p-type mirror currents ratio that MP4 and MP5 is constituted is 1:1,
The N-type mirror currents ratio that MN3 and MN4 is constituted is 1:1.The emitter junction area design of Q2 is Q3 emitter junction
N times of area, the span of n is: the positive integer more than 1.In technique scheme, p-type current mirror 401
P-type cascode structure current mirror or the current mirror using PNP type triode to constitute can also be used；N-type electric current
Mirror 402 can also use N-type cascode structure current mirror or the current mirror using NPN type triode to constitute.
Above-mentioned negative temperature parameter current produces circuit 301 and the concrete structure of positive temperature coefficient current generating circuit 302
The negative temperature parameter current utilizing operational amplifier imaginary short characteristic can also be used to produce circuit and utilize operation amplifier
The positive temperature coefficient current generating circuit of device imaginary short characteristic.
Electric current summing circuit 303 farther includes: two PMOS MP3, MP6 and two NMOS tube MN5,
MN6.The annexation of each device is as follows: the grid of PMOS MP3 connects negative temperature parameter current and produces electricity
The grid of PMOS MP1 in road, the source class of MP3 meets vdd, and the grid of PMOS MP6 connects positive temperature
Coefficient current produces the grid of PMOS MP4 in circuit, and the source class of MP6 connects the leakage of vdd, MP3 and MP6
The most connected, the drain electrode of NMOS tube MN5 is connected to the drain electrode of MP3 and MP6, the drain electrode of MN5 the most also and
Its grid connects, and the source class of MN5 meets vss, and the grid of NMOS tube MN6 connects the grid of MN5, MN6's
Source class connects the output that the drain electrode of vss, MN6 is electric current summing circuit.Positive temperature coefficient electric current and negative temperature coefficient electricity
Flowing and sued for peace by MP3 and MP6, the effect of the N-type current mirror that MN5 and MN6 is constituted is by anti-for electric current of suing for peace
To.
The temperature independent current reference source principle of the present embodiment is as follows: negative temperature parameter current produces the P in circuit
Type current mirror and N-type current mirror form automatic biasing structure, owing to two mirror currents ratio is for 1:1, NMOS tube
The source voltage of MN1 and MN2 is of substantially equal, then the voltage at resistance R1 two ends reduces to PNP type triode Q1
Emitter junction voltage, shown in negative temperature parameter current such as formula (1):
P-type current mirror and N-type current mirror in positive temperature coefficient current generating circuit form automatic biasing structure, due to
Two mirror currents are more of substantially equal than the source voltage for 1:1, NMOS tube MN3 and MN4, then resistance
The voltage at R2 two ends reduce to PNP type triode Q3 and Q2 emitter junction voltage difference, positive temperature coefficient electric current is such as
Shown in formula (2):
In electric current summing circuit, the ratio of the breadth length ratio of PMOS MP3 and MP6 is L:K (L and K herein
Ratio set according to the ratio of two-way input current absolute value temperature coefficient, so that total current temperature coefficient is 0),
Then the electric current after summation is:
ITOTAL=L ICTAT+K·IPTAT (3)
Rationally select the ratio of L Yu K, the ratio of R1 and R2, output current IO UT can be adjusted to zero temperature
Degree coefficient.
It should be noted last that, above example is only in order to illustrate technical scheme and unrestricted.Although
With reference to embodiment, the present invention is described in detail, it will be understood by those within the art that, to the present invention
Technical scheme modify or equivalent, without departure from the spirit and scope of technical solution of the present invention, it is equal
Should contain in the middle of scope of the presently claimed invention.
Claims (7)
1. a temperature independent integrated circuit current reference source, it is characterized in that, described integrated circuit current reference source comprises: the first current generating circuit (301), the second current generating circuit (302) and electric current summing circuit (303)；
Described first current generating circuit (301), for producing the electric current raised and reduce with temperature, is i.e. used for producing negative temperature parameter current；
Described second current generating circuit (302), for producing the electric current raised and raise with temperature, is i.e. used for producing positive temperature coefficient electric current；
The outfan of described first current generating circuit (301) is connected with an input of described electric current summing circuit (303), the outfan of described second current generating circuit (302) is connected with another input of described electric current summing circuit (303), this electric current summing circuit (303) is for setting ratio superposition by the electric current of the first current generating circuit (301) and the second current generating circuit (302) each output in one, and the outfan of described electric current summing circuit (303) is the outfan of temperature independent integrated circuit current reference source；
Described first current generating circuit (301) comprises: the first p-type current mirror, the first N-type current mirror, resistance R1 and the first PNP type triode；
Described first p-type current mirror loads each other with described first N-type current mirror, thus forms automatic biasing structure；
Between source class and the negative supply of the outlet tube that described resistance R1 is connected to described first N-type current mirror；
The emitter stage of described first PNP type triode is connected to the source class of the input pipe of described first N-type current mirror, and the base stage of this first PNP type triode and colelctor electrode connect described negative supply；
Wherein, described first PNP type triode uses NPN type triode or diode in place.
Temperature independent integrated circuit current reference source the most according to claim 1, it is characterized in that, described second current generating circuit (302) comprises: the second p-type current mirror, the second N-type current mirror, resistance R2, the second PNP type triode and the 3rd PNP type triode；
Described second p-type current mirror and the second N-type current mirror load each other, thus form automatic biasing structure；
Between source class and the emitter stage of the second PNP type triode of the outlet tube that described resistance R2 is connected to described second N-type current mirror, base stage and the colelctor electrode of the second PNP type triode connect negative supply；The emitting stage of the 3rd PNP type triode is connected to the source class of the input pipe of described second N-type current mirror, and colelctor electrode and the base stage of the 3rd PNP type triode are connected to negative supply；
Wherein, described second PNP type triode and the 3rd PNP type triode are all or one of them uses NPN type triode or diode in place.
Temperature independent integrated circuit current reference source the most according to claim 2, it is characterised in that described first p-type current mirror and the first N-type current mirror use cascode structure；
Described second p-type current mirror and the second N-type current mirror use cascode structure.
Temperature independent integrated circuit current reference source the most according to claim 2, it is characterized in that, described electric current summing circuit (303) comprises: two p-type metal-oxide-semiconductors, the grid of said two p-type metal-oxide-semiconductor is connected with described first p-type current mirror and the second p-type current mirror respectively, and the drain electrode short circuit of said two p-type metal-oxide-semiconductor forms the outfan of electric current summing circuit.
Temperature independent integrated circuit current reference source the most according to claim 2, it is characterised in that described first p-type current mirror and the second p-type current-mirror structure are identical.
Temperature independent integrated circuit current reference source the most according to claim 2, it is characterised in that
Described first p-type current mirror comprises: the first pmos type transistor and the second pmos type transistor；Described first N-type current mirror comprises: the first nmos type transistor and the second nmos type transistor；
The source class of the first PMOS transistor connects positive supply vdd, and the grid of this first PMOS transistor and drain electrode are connected in A node；The grid of the second PMOS transistor is connected with described node A, and the source class of this second PMOS transistor is connected to described positive supply vdd；
The drain electrode of the first nmos pass transistor connects the drain electrode of described first PMOS transistor, and the grid of this first nmos pass transistor connects the grid of the second nmos pass transistor, and the source class of the first nmos pass transistor connects one end of described resistance R1；
The grid of the second nmos pass transistor and drain electrode are connected in node B, the drain electrode of described second PMOS transistor is connected with described node B, the source class of this second nmos pass transistor connects the emitter stage of PNP type triode Q1, and base stage and the colelctor electrode of this PNP type triode Q1 connect negative supply.
Temperature independent integrated circuit current reference source the most according to claim 1, it is characterised in that
Described first current generating circuit (301) uses negative temperature parameter current based on operational amplifier imaginary short characteristic to produce circuit；
Described second current generating circuit (302) uses positive temperature coefficient current generating circuit based on operational amplifier imaginary short characteristic.
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| CN105022441B true CN105022441B (en) | 2016-09-14 |
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| CN105425891A (en) * | 2015-11-19 | 2016-03-23 | 苏州市职业大学 | Zero-temperature coefficient adjustable voltage reference source |
| CN105824345A (en) * | 2016-03-16 | 2016-08-03 | 中国电子科技集团公司第五十八研究所 | Reference current source circuit based on self-bias structure |
| CN105867517B (en) * | 2016-04-18 | 2018-01-05 | 中国电子科技集团公司第五十八研究所 | A kind of high accuracy, the adjustable generating circuit from reference voltage of output voltage |
| CN105955388A (en) * | 2016-05-26 | 2016-09-21 | 京东方科技集团股份有限公司 | A reference circuit |
| CN106406410B (en) * | 2016-06-21 | 2018-08-28 | 西安电子科技大学 | Band-gap reference source circuit with self-biased structure |
| CN108664070A (en) * | 2017-04-01 | 2018-10-16 | 华大半导体有限公司 | Low-power consumption temperature compensated current source circuit |
| CN108664071A (en) * | 2017-04-01 | 2018-10-16 | 华大半导体有限公司 | A kind of low-power consumption temperature compensated current source circuit for electronic tag |
| CN108549454A (en) * | 2018-05-22 | 2018-09-18 | 淮阴师范学院 | A kind of low-power consumption, high-precision reference voltage source |
| CN108646846B (en) * | 2018-06-29 | 2023-11-10 | 苏州锴威特半导体股份有限公司 | Zero temperature drift current bias circuit |
| CN109343641B (en) * | 2018-11-23 | 2023-09-22 | 天津三源兴泰微电子技术有限公司 | High-precision current reference circuit |
| CN109976425B (en) * | 2019-04-25 | 2020-10-27 | 湖南品腾电子科技有限公司 | Low-temperature coefficient reference source circuit |
| CN110888485B (en) * | 2019-10-09 | 2022-01-18 | 芯创智（北京）微电子有限公司 | Self-biased band gap reference circuit |
| CN111880600B (en) * | 2020-09-28 | 2021-01-08 | 深圳英集芯科技有限公司 | Constant-temperature current source, chip and electronic equipment |
| CN112882527B (en) * | 2021-01-25 | 2022-10-21 | 合肥艾创微电子科技有限公司 | Constant current generation circuit for optical coupling isolation amplifier and current precision adjustment method |
| CN113566997A (en) * | 2021-07-26 | 2021-10-29 | 深圳青铜剑技术有限公司 | Temperature sensing circuit |
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