CN104988582B - The sensor monocrystalline silicon etching device of equipment operating efficiency can be improved - Google Patents
The sensor monocrystalline silicon etching device of equipment operating efficiency can be improved Download PDFInfo
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- CN104988582B CN104988582B CN201510399725.7A CN201510399725A CN104988582B CN 104988582 B CN104988582 B CN 104988582B CN 201510399725 A CN201510399725 A CN 201510399725A CN 104988582 B CN104988582 B CN 104988582B
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CN201510399725.7A CN104988582B (en) | 2015-07-09 | 2015-07-09 | The sensor monocrystalline silicon etching device of equipment operating efficiency can be improved |
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CN201510399725.7A CN104988582B (en) | 2015-07-09 | 2015-07-09 | The sensor monocrystalline silicon etching device of equipment operating efficiency can be improved |
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CN104988582A CN104988582A (en) | 2015-10-21 |
CN104988582B true CN104988582B (en) | 2017-08-11 |
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Families Citing this family (2)
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CN108998834A (en) * | 2018-07-26 | 2018-12-14 | 芜湖凯兴汽车电子有限公司 | A kind of sensor monocrystalline silicon etching device |
CN109494177B (en) * | 2018-09-13 | 2021-07-02 | 蚌埠市龙子湖区金力传感器厂 | Sensor monocrystalline silicon etching device |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0223616A (en) * | 1988-07-12 | 1990-01-25 | Seiko Epson Corp | Dry etching device and manufacture of semiconductor device |
US6392187B1 (en) * | 1997-10-15 | 2002-05-21 | Tokyo Electron Limited | Apparatus and method for utilizing a plasma density gradient to produce a flow of particles |
JP4273016B2 (en) * | 2004-02-10 | 2009-06-03 | キヤノン株式会社 | Method for manufacturing liquid discharge head |
JP5091258B2 (en) * | 2007-02-26 | 2012-12-05 | ビーコ・インスツルメンツ・インコーポレーテッド | Ion source and method of operating an ion source electromagnet |
US8419960B2 (en) * | 2008-07-11 | 2013-04-16 | Tokyo Electron Limited | Plasma processing apparatus and method |
CN101820720A (en) * | 2010-03-24 | 2010-09-01 | 中国地质大学(北京) | Soft magnetic-shell strong-electromagnetic field reinforced-inductive coupling plasma generator |
KR101226266B1 (en) * | 2010-09-13 | 2013-01-25 | (주)세미머티리얼즈 | Plasma Reactor FOR TEXTURING OF SOLAR CELL |
KR101251880B1 (en) * | 2011-12-29 | 2013-04-08 | 로체 시스템즈(주) | Apparatus for etching of wafer and wafer etching method using the same |
CN103227090B (en) * | 2013-02-04 | 2016-04-06 | 深圳市劲拓自动化设备股份有限公司 | A kind of linear plasma source |
CN204825137U (en) * | 2015-07-09 | 2015-12-02 | 江苏德尔森传感器科技有限公司 | Can improve equipment work efficiency's sensor monocrystalline silicon etching device |
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Effective date of registration: 20160303 Address after: 215600, Jiangsu Suzhou Zhangjiagang Free Trade Zone, Hong Kong and Macao Road 15 sensor industry park Applicant after: Mou Heng Address before: 215600 Jiangsu, Suzhou, Zhangjiagang Free Trade Zone, Hong Kong and Macao road sensor industry park Applicant before: The gloomy sensor Science and Technology Ltd. of Jiangsu Dare |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160322 Address after: 400714 Chongqing District of Beibei city and high-tech Industrial Park Road No. 5, No. 317 of the Milky way Applicant after: Chongqing Adelson Sensor Technology Co., Ltd. Address before: 215600, Jiangsu Suzhou Zhangjiagang Free Trade Zone, Hong Kong and Macao Road 15 sensor industry park Applicant before: Mou Heng |
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Effective date of registration: 20210416 Address after: 210000 Zhongguancun Software Park, 7 Yingcui Road, Jiangjun Avenue, Jiangning Development Zone, Nanjing City, Jiangsu Province Patentee after: JIANGSU DER SENSOR HOLDINGS Ltd. Address before: 400714 Chongqing District of Beibei city and high-tech Industrial Park Road No. 5, No. 317 of the Milky way Patentee before: Chongqing Adelson Sensor Technology Co.,Ltd. |
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