CN104978996A - Three-dimensional-structure storer based on memristor - Google Patents
Three-dimensional-structure storer based on memristor Download PDFInfo
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- CN104978996A CN104978996A CN201510440583.4A CN201510440583A CN104978996A CN 104978996 A CN104978996 A CN 104978996A CN 201510440583 A CN201510440583 A CN 201510440583A CN 104978996 A CN104978996 A CN 104978996A
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Abstract
The invention relates to the technical field of storers and discloses a three-dimensional-structure storer based on a memristor. The three-dimensional-structure storer comprises a storer base body, a control circuit and an address buffering device, wherein the control circuit is arranged in the storer base body; the address buffering device is electrically connected with the control circuit; the storer also comprises an address decoding device and an array storing device which is electrically connected with the address decoding device; the address decoding device is electrically connected with the address buffering device; and the array storing device is also connected with an amplifying circuit which is connected with an output buffer. According to the three-dimensional-structure storer, the memristor is used as a storage medium; by using the stacking characteristic of the memristor, the large-capacity storing is realized; as the energy consumption of the memristor is low, the energy consumption of the whole storer is greatly reduced; and the storer also has the advantage of being simple in structure.
Description
Technical field
The present invention relates to memory construction technical field, particularly relate to a kind of three-D structure memory based on memristor.
Background technology
Moore's Law shows that the quantity of transistor integrated on semi-conductor chip can be doubled for every 18 months.But along with transistor size integrated in unit area gets more and more, the size of transistor is more and more less, close to physics limit, in addition, the transistor that integrated quantity is more, its thermal value is larger, easily causes chip normally to work, and these problems make Moore's Law be faced with huge challenge.More and more scientist thinks, along with the transistor of more how integrated quantity, " Moore's Law " that witness semi-conductor industry spans half a century will welcome the test of physics limit.Therefore adopt traditional C OMS device as Memory Logic Unit and adopt the storer of crossbar array designs will be subject to great restriction significantly improving in memory capacity further, in view of this, a kind of three-D structure memory based on memristor is inventors herein proposed.
Summary of the invention
The object of the invention is to for the deficiencies in the prior art, provide a kind of three-D structure memory based on memristor, it has the advantage that structure is simple, memory capacity is large and energy consumption is low.
For achieving the above object, a kind of three-D structure memory based on memristor of the present invention, comprise storer matrix, control circuit and address buffer device, described control circuit is arranged in storer matrix, described address buffer device and control circuit are electrically connected, the array memory also comprising address decoding device and be electrically connected with address decoding device, described address decoding device and address buffer device are electrically connected, described array memory is also connected with amplifying circuit, and described amplifying circuit is connected with output buffer.
Further, described array memory comprises several three-dimensional memory features, and several three-dimensional memory features described are with matrix series winding or in parallel, and described three-dimensional memory feature comprises several memristor storage unit, and several memristor storage unit are with three-dimensional stack construction.
Further, described memristor storage unit is of a size of 30nm x 30nm.
Further, described address buffer device comprises X to address buffer, Y-direction address buffer and Z-direction address buffer, and described X is electrically connected with control circuit respectively to address buffer, Y-direction address buffer and Z-direction address buffer.
Preferably, described address decoding device comprises X to code translator, Y-direction code translator and Z-direction code translator, described X is electrically connected to code translator and X to address buffer, described Y-direction code translator and Y-direction address buffer are electrically connected, described Z-direction code translator and Z-direction address buffer are electrically connected, and X is electrically connected with control circuit respectively to code translator, Y-direction code translator and Z-direction code translator.
Further, described memristor storage unit comprises the top electrode, storage medium layer, bottom electrode and the bottom electrode guide layer for being guided out bottom electrode that set gradually from top to bottom.
Preferably, described storage medium layer comprises the n type semiconductor layer and p type semiconductor layer that superpose successively from top to bottom, described n type semiconductor layer is electrically connected with top electrode by Pt metal nano wire, and described p type semiconductor layer is electrically connected with bottom electrode by Pt metal nano wire.
Further, any one material that described n type semiconductor layer, p type semiconductor layer can be in Ag, Ti, Cu, Ta, W, Pt, Au, TiW and graphene oxide is respectively made.
Preferably, the thickness of described n type semiconductor layer, p type semiconductor layer is between 60 ~ 300nm.
Beneficial effect of the present invention: compared with prior art, a kind of three-D structure memory based on memristor of the present invention, comprise storer matrix, control circuit and address buffer device, described control circuit is arranged in storer matrix, described address buffer device and control circuit are electrically connected, the array memory also comprising address decoding device and be electrically connected with address decoding device, described address decoding device and address buffer device are electrically connected, described array memory is also connected with amplifying circuit, and described amplifying circuit is connected with output buffer; This three-D structure memory adopts memristor as storage medium, utilizes the storehouse characteristic of memristor, realizes jumbo storage, and because the energy consumption of memristor is low, overall storer energy consumption is declined to a great extent, and this storer also has the simple advantage of structure.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is one of reaction mechanism schematic diagram of memristor of the present invention.
Fig. 3 is the reaction mechanism schematic diagram two of memristor of the present invention.
Fig. 4 is current/voltage (IV) curve synoptic diagram of memristor of the present invention.
Reference numeral comprises:
Top electrode-1, storage medium layer-2, bottom electrode-3, bottom electrode guide layer-4..
Embodiment
Below in conjunction with accompanying drawing, the present invention will be described in detail.
See Fig. 1 to Fig. 4, a kind of three-D structure memory based on memristor, comprise storer matrix, control circuit and address buffer device, described control circuit is arranged in storer matrix, described address buffer device and control circuit are electrically connected, the array memory also comprising address decoding device and be electrically connected with address decoding device, described address decoding device and address buffer device are electrically connected, described array memory is also connected with amplifying circuit, and described amplifying circuit is connected with output buffer; The principle of work of this storer is: data input to address buffer device, under the control of control circuit, the transmission speed of address buffer device to data is changed, then by address decoding device, decoding is carried out to data, send data to array memory by control circuit after data decoding and store; When needing to read the data stored, control circuit sends reading command, and address decoding device carries out addressing according to instruction, then the data of corresponding stored in array memory is taken out, data transfer to amplifying circuit, finally export output buffer to and are exported by corresponding port.Because this three-D structure memory adopts memristor as storage medium, utilize the storehouse characteristic of memristor, realize jumbo storage, memristor can provide mass storage capacity, and its memory capacity of memristor equipment being 10nm for half pitch can up to 110GB/cm
2, and because the energy consumption of memristor is low, below unit consumption of energy value 1pJ/bit, overall storer energy consumption is declined to a great extent, and this storer also has the simple advantage of structure.
In the technical program, described array memory comprises several three-dimensional memory features, several three-dimensional memory features described are with matrix series winding or in parallel, and described three-dimensional memory feature comprises several memristor storage unit, and several memristor storage unit are with three-dimensional stack construction.That is by several memristors with three-dimensional architecture storehouse, like this, when data write, data are stored to three-dimensional memory feature in the mode of three-dimensional; After three-dimensional memory feature data as current are filled with, under the effect of control circuit, data continue to write in another three-dimensional memory feature.
The up-to-date making technology of existing transistor is at 45nm x 45nm, and in the technical program, described memristor storage unit is of a size of 30nm x 30nm; This is of a size of plane length and width size, and this memristor storage unit has higher integrated level relative to transistor.
Further, described address buffer device comprises X to address buffer, Y-direction address buffer and Z-direction address buffer, and described X is electrically connected with control circuit respectively to address buffer, Y-direction address buffer and Z-direction address buffer.When there being data to write, control circuit sends instruction and data is distributed to respectively X to address buffer, Y-direction address buffer and Z-direction address buffer so that control circuit with corresponding speed by data stored in three-dimensional memory feature.
In the technical program, described address decoding device comprises X to code translator, Y-direction code translator and Z-direction code translator, described X is electrically connected to code translator and X to address buffer, described Y-direction code translator and Y-direction address buffer are electrically connected, described Z-direction code translator and Z-direction address buffer are electrically connected, and X is electrically connected with control circuit respectively to code translator, Y-direction code translator and Z-direction code translator.When data write to address buffer, Y-direction address buffer and Z-direction address buffer through X, its corresponding data need to compile the address in three-dimensional memory feature, now, described X provides memory address to code translator, Y-direction code translator and Z-direction code translator, and data write according to memory address by control circuit; Meanwhile, when reading the data, control circuit sends reading command, and described X carries out addressing to code translator, Y-direction code translator and Z-direction code translator according to instruction, and control circuit takes out data according to memory address again.
Data are when storing, normally be converted to binary code to store, representation concrete is in storage " 1 " and " 0 ", in the technical program, described memristor storage unit comprises the top electrode 1, storage medium layer 2, bottom electrode 3 and the bottom electrode guide layer 4 for being guided out bottom electrode 3 that set gradually from top to bottom.During the work of this memristor, after loading current or voltage, the high low resistance state of storage medium layer 2 inside changes; Further definition high value, low resistance correspondence " 1 ", " 0 ", thus realize data storage.
As further improvement, described storage medium layer 2 comprises the n type semiconductor layer and p type semiconductor layer that superpose successively from top to bottom, described n type semiconductor layer is electrically connected with top electrode 1 by Pt metal nano wire, and described p type semiconductor layer is electrically connected with bottom electrode 3 by Pt metal nano wire.
Further, any one material that described n type semiconductor layer, p type semiconductor layer can be in Ag, Ti, Cu, Ta, W, Pt, Au, TiW and graphene oxide is respectively made, certainly, as preferably, for graphene oxide, (English is described storage medium layer 2: graphene oxide, be called for short GO), namely described top electrode 1, storage medium layer 2, bottom electrode 3 are respectively AL, GO, AL; Through many experiments find, utilize AL/ITO(metal oxide) or AL/Pt be top electrode 1, bottom electrode 3 combination time, resistive characteristic is more stable; Because its band gap of graphene oxide is adjustable, can process at ambient temperature, can widely in this storer, specifically, the change of graphene oxide band gap makes it can by insulator to semiconductor transition, and the impact of temperature on graphene oxide is little, larger Fermi velocity and low contact resistance then contribute to reducing the response device time further, and the operation response characteristic of ultra-high frequency makes its reading and writing data speed faster.
In the technical program, the thickness of described n type semiconductor layer, p type semiconductor layer is between 60 ~ 300nm.Certainly, in actual applications, described n type semiconductor layer is 70 ± 5nm, and described p type semiconductor layer is 80nm ± 5 is the best, in this value range, better can ensure the continuous extraction of film, but also can ensure that thickness is moderate.
Above content is only preferred embodiment of the present invention, and for those of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, this description should not be construed as limitation of the present invention.
Claims (9)
1. the three-D structure memory based on memristor, comprise storer matrix, control circuit and address buffer device, described control circuit is arranged in storer matrix, described address buffer device and control circuit are electrically connected, it is characterized in that: the array memory also comprising address decoding device and be electrically connected with address decoding device, described address decoding device and address buffer device are electrically connected, described array memory is also connected with amplifying circuit, and described amplifying circuit is connected with output buffer.
2. a kind of three-D structure memory based on memristor according to claim 1, it is characterized in that: described array memory comprises several three-dimensional memory features, several three-dimensional memory features described are with matrix series winding or in parallel, described three-dimensional memory feature comprises several memristor storage unit, and several memristor storage unit are with three-dimensional stack construction.
3. a kind of three-D structure memory based on memristor according to claim 2, is characterized in that: described memristor storage unit is of a size of 30nm x 30nm.
4. a kind of three-D structure memory based on memristor according to claim 1, it is characterized in that: described address buffer device comprises X to address buffer, Y-direction address buffer and Z-direction address buffer, and described X is electrically connected with control circuit respectively to address buffer, Y-direction address buffer and Z-direction address buffer.
5. a kind of three-D structure memory based on memristor according to claim 4, it is characterized in that: described address decoding device comprises X to code translator, Y-direction code translator and Z-direction code translator, described X is electrically connected to code translator and X to address buffer, described Y-direction code translator and Y-direction address buffer are electrically connected, described Z-direction code translator and Z-direction address buffer are electrically connected, and X is electrically connected with control circuit respectively to code translator, Y-direction code translator and Z-direction code translator.
6. a kind of three-D structure memory based on memristor according to claim 2, is characterized in that: described memristor storage unit comprises the top electrode (1), storage medium layer (2), bottom electrode (3) and the bottom electrode guide layer (4) for being guided out bottom electrode (3) that set gradually from top to bottom.
7. a kind of three-D structure memory based on memristor according to claim 6, it is characterized in that: described storage medium layer (2) comprises the n type semiconductor layer and p type semiconductor layer that superpose successively from top to bottom, described n type semiconductor layer is electrically connected with top electrode (1) by Pt metal nano wire, and described p type semiconductor layer is electrically connected with bottom electrode (3) by Pt metal nano wire.
8. a kind of three-D structure memory based on memristor according to claim 7, is characterized in that: any one material that described n type semiconductor layer, p type semiconductor layer can be in Ag, Ti, Cu, Ta, W, Pt, Au, TiW and graphene oxide is respectively made.
9. a kind of three-D structure memory based on memristor according to claim 7, is characterized in that: the thickness of described n type semiconductor layer, p type semiconductor layer is between 60 ~ 300nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108536422A (en) * | 2017-03-03 | 2018-09-14 | 慧与发展有限责任合伙企业 | analog multiplier-accumulator |
| CN113707200A (en) * | 2021-09-08 | 2021-11-26 | 上海集成电路装备材料产业创新中心有限公司 | Memory and reading, writing and erasing method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101635162A (en) * | 2008-07-25 | 2010-01-27 | 三星电子株式会社 | Stacked memory module and system |
| US7982504B1 (en) * | 2010-01-29 | 2011-07-19 | Hewlett Packard Development Company, L.P. | Interconnection architecture for multilayer circuits |
| CN103247756A (en) * | 2013-04-10 | 2013-08-14 | 华中科技大学 | Memristor and manufacture method thereof |
| CN103871464A (en) * | 2012-12-07 | 2014-06-18 | 庄建祥 | Programmable resistive device and memory using diode as selector |
| CN104051545A (en) * | 2014-02-26 | 2014-09-17 | 东北师范大学 | Memristor based on pn heterostructure and manufacturing method thereof |
| CN204760039U (en) * | 2015-07-24 | 2015-11-11 | 广东科技学院 | Three dimensional structure memory based on recall and hinder ware |
-
2015
- 2015-07-24 CN CN201510440583.4A patent/CN104978996A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101635162A (en) * | 2008-07-25 | 2010-01-27 | 三星电子株式会社 | Stacked memory module and system |
| US7982504B1 (en) * | 2010-01-29 | 2011-07-19 | Hewlett Packard Development Company, L.P. | Interconnection architecture for multilayer circuits |
| CN103871464A (en) * | 2012-12-07 | 2014-06-18 | 庄建祥 | Programmable resistive device and memory using diode as selector |
| CN103247756A (en) * | 2013-04-10 | 2013-08-14 | 华中科技大学 | Memristor and manufacture method thereof |
| CN104051545A (en) * | 2014-02-26 | 2014-09-17 | 东北师范大学 | Memristor based on pn heterostructure and manufacturing method thereof |
| CN204760039U (en) * | 2015-07-24 | 2015-11-11 | 广东科技学院 | Three dimensional structure memory based on recall and hinder ware |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108536422A (en) * | 2017-03-03 | 2018-09-14 | 慧与发展有限责任合伙企业 | analog multiplier-accumulator |
| US11315009B2 (en) | 2017-03-03 | 2022-04-26 | Hewlett Packard Enterprise Development Lp | Analog multiplier-accumulators |
| CN113707200A (en) * | 2021-09-08 | 2021-11-26 | 上海集成电路装备材料产业创新中心有限公司 | Memory and reading, writing and erasing method thereof |
| CN113707200B (en) * | 2021-09-08 | 2024-03-15 | 上海集成电路装备材料产业创新中心有限公司 | Memory and reading, writing and erasing method thereof |
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Application publication date: 20151014 |