CN104916020A - Novel phase-shifting type image processing system based on common source amplifying circuit - Google Patents
Novel phase-shifting type image processing system based on common source amplifying circuit Download PDFInfo
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- CN104916020A CN104916020A CN201510317287.5A CN201510317287A CN104916020A CN 104916020 A CN104916020 A CN 104916020A CN 201510317287 A CN201510317287 A CN 201510317287A CN 104916020 A CN104916020 A CN 104916020A
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Abstract
The invention discloses a novel phase-shifting type image processing system based on a common source amplifying circuit. The system comprises a boosted circuit, a drive circuit, a processing circuit, a two-stage low-pass filtering amplifying circuit, and a phase-shifting processing circuit, wherein the drive circuit is connected with the boosted circuit; the processing circuit is connected with the boosted circuit and the drive circuit; the two-stage low-pass filtering amplifying circuit is connected with the output end of the processing circuit; and the phase-shifting processing circuit is connected with the two-stage low-pass filtering amplifying circuit. The system is characterized in that a common source amplifying circuit is connected in series between the two-stage low-pass filtering amplifying circuit and the phase-shifting processing circuit. According to the system disclosed by the invention, an image signal is amplified by adopting the common source amplifying circuit, so that the signal is undistorted when the image signal is amplified. The novel phase-shifting type image processing system disclosed by the invention is applied to a face recognition system, the recognition reliability and stability can be greatly improved, and the safety of people is guaranteed.
Description
Technical field
The present invention relates to electronic applications, specifically refer to a kind of phase shift New Image disposal system based on common source amplifying circuit.
Background technology
In current social frequent occur crack a crib, plunder, the continuous generation of the case such as to hurt sb.'s feelings, Given this plant reason, antitheft door starts to come into huge numbers of families, brings peacefulness to family.Along with the development of society, the progress of technology, the acceleration of rhythm of life, the raising of the level of consumption, people are also more and more higher for the expectation of household, also more and more urgent to requiring easily, so people have invented present face recognition door control system.
But the image procossing precision in current face identification system is not high thus cause the accuracy of identification of face identification system not high, often there will be the existing picture of wrong identification, brought very large potential safety hazard.
Summary of the invention
The object of the invention is to overcome the defect that the processing accuracy of current image processing system is not high, a kind of phase shift New Image disposal system based on common source amplifying circuit is provided.
The following technical scheme of object of the present invention realizes: a kind of phase shift New Image disposal system based on common source amplifying circuit, it comprises booster circuit, the driving circuit be connected with booster circuit, the treatment circuit be simultaneously connected with driving circuit with booster circuit, the two-stage low-pass filtering amplifying circuit be connected with treatment circuit output terminal, the phase shift treatment circuit be connected with two-stage low-pass filtering amplifying circuit, and be serially connected in the common source amplifying circuit between two-stage low-pass filtering amplifying circuit and phase shift treatment circuit.
Further, described common source amplifying circuit is by field effect transistor K1, field effect transistor K2, triode VT6, negative pole is connected with the grid of field effect transistor K1, the polar capacitor C12 that positive pole is then connected with two-stage low-pass filtering amplifying circuit, N pole is connected with the grid of field effect transistor K1, the diode D6 that P pole is then connected with the base stage of triode VT6, one end is connected with the drain electrode of field effect transistor K1, the resistance R19 of other end ground connection after resistance R20, one end is connected with the source electrode of field effect transistor K1, the other end then meets the resistance R18 of 12V voltage after resistance R17, positive pole is connected with the tie point of resistance R18 with resistance R17, the polar capacitor C13 that negative pole is then connected with the drain electrode of field effect transistor K2, N pole is connected with the negative pole of polar capacitor C13, the diode D7 that P pole is then connected with the grid of field effect transistor K2, and one end is connected with the collector of triode VT6, the resistance R21 that the other end is then connected with the source electrode of field effect transistor K2 forms, the base stage of described triode VT6 is connected with the tie point of resistance R20 with resistance R19, its emitter is then connected with the grid of field effect transistor K2, the source electrode of described field effect transistor K2 is connected with the base stage of triode VT6 and phase shift treatment circuit respectively.
Described phase shift treatment circuit is by phase shift chip U1, triode VT4, triode VT5, one end is connected with the VCC+ pin of phase shift chip U1, the resistance R14 that the other end is connected with the IN1 pin of phase shift chip U1, negative pole is connected with the IN1 pin of phase shift chip U1 after resistance R13, the polar capacitor C9 that positive pole is connected with the IN2 pin of phase shift chip U1, positive pole is connected with the NC pin of phase shift chip U1 after resistance R15, the polar capacitor C11 that negative pole is connected with the collector of triode VT4, positive pole is connected with the OUT pin of phase shift chip U1, the polar capacitor C10 of minus earth, one end is connected with the OUT pin of phase shift chip U1, the other end is as the potentiometer R16 of an output terminal of system, P pole is connected with the OFF1 pin of phase shift chip U1, the diode D4 that N pole is connected with the base stage of triode VT4, and P pole is connected with the OFF2 pin of phase shift chip U1, the diode D5 that N pole is connected with the emitter of triode VT5 forms, the VCC+ pin of described phase shift chip U1 is connected with two-stage low-pass filtering amplifying circuit, VCC-pin ground connection, OUT pin are connected with the sliding end of potentiometer R16, the emitter of triode VT4 is connected with the base stage of triode VT5, the collector of triode VT5 is as another output terminal of system, and the negative pole of electric capacity C9 is connected with the source electrode of field effect transistor K2.
Described booster circuit is by transformer T1, be arranged on the telefault L1 on the former limit of transformer T1, be arranged on the telefault L2 of transformer T1 secondary, the diode D1 that N pole is connected with driving circuit, P pole is connected with driving circuit with the Same Name of Ends of telefault L2 respectively after polar capacitor C1, and N pole is connected with the P pole of diode D1, the thyristor D2 of P pole ground connection forms; The Same Name of Ends of described telefault L1 is connected with circuit of output terminal, the non-same polarity ground connection of telefault L2; The non-same polarity of described telefault L1 together with the N pole of diode D1 as the input end of this system.
Described driving circuit is by driving chip U, the resistance R1 that one end is connected with the Same Name of Ends of telefault L2, the other end is connected with the COM pin of driving chip U, the electric capacity C2 that positive pole is connected with the RT pin of driving chip U, negative pole is connected with two-stage low-pass filtering amplifying circuit, and one end forms with the resistance R3 that VREF pin is connected, the other end is connected with treatment circuit of driving chip U; The VCC pin of described driving chip U is connected with the N pole of diode D1, INV pin is connected with treatment circuit, GND pin ground connection, PWM pin are connected with treatment circuit.
Described treatment circuit comprises: triode VT1, resistance R4, resistance R5, resistance R2 and diode D3, the P pole of described diode D3 is connected with the Same Name of Ends of telefault L1 and the collector of triode VT1 respectively, its N pole is in turn through resistance R2, be connected with the emitter of triode VT1 after resistance R5 and resistance R4, the base stage of described triode VT1 is connected with the VREF pin of driving chip U after resistance R3, emitter is connected with the PWM pin of driving chip U, the tie point of resistance R4 and resistance R5 is connected with the INV pin of driving chip U and two-stage low-pass filtering amplifying circuit simultaneously, the N pole of diode D3 is also connected with two-stage low-pass filtering amplifying circuit, the tie point of resistance R2 and resistance R5 is connected with the negative pole of polar capacitor C2 and two-stage low-pass filtering amplifying circuit simultaneously.
Described two-stage low-pass filtering amplifying circuit is by amplifier P1, amplifier P2, triode VT2, triode VT3, positive pole is connected with the tie point of resistance R5 with resistance R2, the polar capacitor C4 of minus earth, one end is connected with the normal phase input end of amplifier P1, the resistance R6 that the other end is connected with the positive pole of polar capacitor C4, positive pole is connected with amplifier P1 inverting input after resistance R7, the polar capacitor C3 that negative pole is connected with the negative pole of polar capacitor C4, be serially connected in the polar capacitor C5 between the output terminal of amplifier P1 and inverting input, negative pole is connected with the output terminal of amplifier P1, the polar capacitor C6 that positive pole is connected with the base stage of triode VT2, one end is connected with the collector of triode VT2, the resistance R8 that the other end is connected with the emitter of triode VT3, positive pole is connected with the base stage of triode VT3 after resistance R9, the electric capacity C7 that negative pole is connected with the output terminal of amplifier P1 and the VCC+ pin of phase shift chip U1 simultaneously, one end is connected with the positive pole of polar capacitor C7, the resistance R10 that the other end is connected with the inverting input of amplifier P2, the resistance R11 be in parallel with resistance R10, be serially connected in the polar capacitor C8 between the output terminal of amplifier P2 and inverting input, and the resistance R12 be serially connected between the normal phase input end of amplifier P2 and output terminal forms, the emitter of described triode VT2 is connected with the negative pole of polar capacitor C7, and the collector of triode VT3 is connected with the normal phase input end of amplifier P2, and the output terminal of amplifier P2 is connected with the positive pole of polar capacitor C12.
In order to reach better result of use, the driving chip U described in this is preferably UC384X integrated chip, and this phase shift chip U1 is preferably LM741 integrated chip to realize.
The present invention compared with prior art, has the following advantages and beneficial effect:
(1) the present invention adopts common source amplifying circuit to amplify picture signal, thus guarantees that the present invention makes signal undistorted while enlarged image signal.
(2) the present invention is applied to the reliability and stability that face identification system can improve identification greatly, has ensured the safety of people.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of face image processing system of the present invention.
Fig. 2 is common source amplification circuit structure schematic diagram of the present invention.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment
As shown in Figure 1, the present invention includes booster circuit, the driving circuit be connected with booster circuit, the treatment circuit be simultaneously connected with driving circuit with booster circuit, the two-stage low-pass filtering amplifying circuit be connected with treatment circuit output terminal, the phase shift treatment circuit be connected with two-stage low-pass filtering amplifying circuit, and be serially connected in the common source amplifying circuit between two-stage low-pass filtering amplifying circuit and phase shift treatment circuit.
Described phase shift treatment circuit is by phase shift chip U1, triode VT4, triode VT5, one end is connected with the VCC+ pin of phase shift chip U1, the resistance R14 that the other end is connected with the IN1 pin of phase shift chip U1, negative pole is connected with the IN1 pin of phase shift chip U1 after resistance R13, the polar capacitor C9 that positive pole is connected with the IN2 pin of phase shift chip U1, positive pole is connected with the NC pin of phase shift chip U1 after resistance R15, the polar capacitor C11 that negative pole is connected with the collector of triode VT4, positive pole is connected with the OUT pin of phase shift chip U1, the polar capacitor C10 of minus earth, one end is connected with the OUT pin of phase shift chip U1, the other end is as the potentiometer R16 of an output terminal of system, P pole is connected with the OFF1 pin of phase shift chip U1, the diode D4 that N pole is connected with the base stage of triode VT4, and P pole is connected with the OFF2 pin of phase shift chip U1, the diode D5 that N pole is connected with the emitter of triode VT5 forms.
During connection, the VCC+ pin of described phase shift chip U1 is connected with two-stage low-pass filtering amplifying circuit, VCC-pin ground connection, OUT pin are connected with the sliding end of potentiometer R16, the emitter of triode VT4 is connected with the base stage of triode VT5, the collector of triode VT5 is as another output terminal of system, and the negative pole of electric capacity C9 is connected with common source amplifying circuit.Phase shift treatment circuit, can process making the phase place of picture signal, thus make picture signal more stable.In order to ensure implementation result, described phase shift chip U1 is preferably LM741 integrated chip to realize.
Described booster circuit is by transformer T1, be arranged on the telefault L1 on the former limit of transformer T1, be arranged on the telefault L2 of transformer T1 secondary, the diode D1 that N pole is connected with driving circuit, P pole is connected with driving circuit with the Same Name of Ends of telefault L2 respectively after polar capacitor C1, and N pole is connected with the P pole of diode D1, the thyristor D2 of P pole ground connection forms.The Same Name of Ends of described telefault L1 is connected with circuit of output terminal, the non-same polarity ground connection of telefault L2.The non-same polarity of described telefault L1 together with the N pole of diode D1 as the input end of this system.
Described driving circuit is by driving chip U, the resistance R1 that one end is connected with the Same Name of Ends of telefault L2, the other end is connected with the COM pin of driving chip U, the electric capacity C2 that positive pole is connected with the RT pin of driving chip U, negative pole is connected with two-stage low-pass filtering amplifying circuit, and one end forms with the resistance R3 that VREF pin is connected, the other end is connected with treatment circuit of driving chip U.The VCC pin of described driving chip U is connected with the N pole of diode D1, INV pin is connected with treatment circuit, GND pin ground connection, PWM pin are connected with treatment circuit.In order to can better drive the present invention, this driving chip U preferentially adopts UC384X integrated chip to realize.
Described treatment circuit comprises triode VT1, resistance R4, resistance R5, resistance R2 and diode D3.It is when connecting, the P pole of this diode D3 is connected with the Same Name of Ends of telefault L1 and the collector of triode VT1 respectively, its N pole is in turn through resistance R2, be connected with the emitter of triode VT1 after resistance R5 and resistance R4, the base stage of described triode VT1 is connected with the VREF pin of driving chip U after resistance R3, emitter is connected with the PWM pin of driving chip U, the tie point of resistance R4 and resistance R5 is connected with the INV pin of driving chip U and two-stage low-pass filtering amplifying circuit simultaneously, the N pole of diode D3 is also connected with two-stage low-pass filtering amplifying circuit, the tie point of resistance R2 and resistance R5 is connected with the negative pole of polar capacitor C2 and two-stage low-pass filtering amplifying circuit simultaneously.
Described two-stage low-pass filtering amplifying circuit comprises amplifier P1, amplifier P2, triode VT2, triode VT3, positive pole is connected with the tie point of resistance R5 with resistance R2, the polar capacitor C4 of minus earth, one end is connected with the normal phase input end of amplifier P1, the resistance R6 that the other end is connected with the positive pole of polar capacitor C4, positive pole is connected with amplifier P1 inverting input after resistance R7, the polar capacitor C3 that negative pole is connected with the negative pole of polar capacitor C4, be serially connected in the polar capacitor C5 between the output terminal of amplifier P1 and inverting input, negative pole is connected with the output terminal of amplifier P1, the polar capacitor C6 that positive pole is connected with the base stage of triode VT2.
In order to make filtering more thorough, this two-stage low-pass filtering amplifying circuit also includes one end and is connected with the collector of triode VT2, the resistance R8 that the other end is connected with the emitter of triode VT3, positive pole is connected with the base stage of triode VT3 after resistance R9, the electric capacity C7 that negative pole is connected with the output terminal of amplifier P1 and the VCC+ pin of phase shift chip U1 simultaneously, one end is connected with the positive pole of polar capacitor C7, the resistance R10 that the other end is connected with the inverting input of amplifier P2, the resistance R11 be in parallel with resistance R10, be serially connected in the polar capacitor C8 between the output terminal of amplifier P2 and inverting input, and the resistance R12 be serially connected between the normal phase input end of amplifier P2 and output terminal.
Wherein, the emitter of this triode VT2 will be connected with the negative pole of polar capacitor C7, and the collector of triode VT3 is connected with the normal phase input end of amplifier P2, and the output terminal of amplifier P2 is connected with the negative pole of electric capacity C9.
As shown in Figure 2, this common source amplifying circuit is by field effect transistor K1, and field effect transistor K2, triode VT6, resistance R17, resistance R18, resistance R19, resistance R20, resistance R21, polar capacitor C12, polar capacitor C13, diode D6 and diode D7 form.
Connect into, the negative pole of this polar capacitor C12 is connected with the grid of field effect transistor K1, its positive pole is then connected with two-stage low-pass filtering amplifying circuit, the N pole of diode D6 is connected with the grid of field effect transistor K1, its P pole is then connected with the base stage of triode VT6, one end of resistance R19 is connected with the drain electrode of field effect transistor K1, its other end is ground connection after resistance R20, one end of resistance R18 is connected with the source electrode of field effect transistor K1, its other end then connects 12V voltage after resistance R17, the positive pole of polar capacitor C13 is connected with the tie point of resistance R18 with resistance R17, its negative pole is then connected with the drain electrode of field effect transistor K2, the N pole of diode D7 is connected with the negative pole of polar capacitor C13, its P pole is then connected with the grid of field effect transistor K2, one end of resistance R21 is connected with the collector of triode VT6, its other end is then connected with the source electrode of field effect transistor K2.Wherein, this field effect transistor K1, triode VT6, field effect transistor K2 and resistance R21 form a commonsource amplifier.
Meanwhile, the base stage of this triode VT6 is connected with the tie point of resistance R20 with resistance R19, its emitter is then connected with the grid of field effect transistor K2; The source electrode of described field effect transistor K2 is connected with the base stage of triode VT6 and phase shift treatment circuit respectively.By the amplification process of this common source amplifying circuit, the present invention distortionlessly can carry out amplification process to picture signal, thus improves the accuracy of image.
As mentioned above, just well the present invention can be realized.
Claims (8)
1. the phase shift New Image disposal system based on common source amplifying circuit, it comprises booster circuit, the driving circuit be connected with booster circuit, the treatment circuit be simultaneously connected with driving circuit with booster circuit, the two-stage low-pass filtering amplifying circuit be connected with treatment circuit output terminal, and the phase shift treatment circuit be connected with two-stage low-pass filtering amplifying circuit, it is characterized in that, between two-stage low-pass filtering amplifying circuit and phase shift treatment circuit, be also serially connected with common source amplifying circuit, described common source amplifying circuit is by field effect transistor K1, field effect transistor K2, triode VT6, negative pole is connected with the grid of field effect transistor K1, the polar capacitor C12 that positive pole is then connected with two-stage low-pass filtering amplifying circuit, N pole is connected with the grid of field effect transistor K1, the diode D6 that P pole is then connected with the base stage of triode VT6, one end is connected with the drain electrode of field effect transistor K1, the resistance R19 of other end ground connection after resistance R20, one end is connected with the source electrode of field effect transistor K1, the other end then meets the resistance R18 of 12V voltage after resistance R17, positive pole is connected with the tie point of resistance R18 with resistance R17, the polar capacitor C13 that negative pole is then connected with the drain electrode of field effect transistor K2, N pole is connected with the negative pole of polar capacitor C13, the diode D7 that P pole is then connected with the grid of field effect transistor K2, and one end is connected with the collector of triode VT6, the resistance R21 that the other end is then connected with the source electrode of field effect transistor K2 forms, the base stage of described triode VT6 is connected with the tie point of resistance R20 with resistance R19, its emitter is then connected with the grid of field effect transistor K2, the source electrode of described field effect transistor K2 is connected with the base stage of triode VT6 and phase shift treatment circuit respectively.
2. a kind of phase shift New Image disposal system based on common source amplifying circuit according to claim 1, it is characterized in that: described phase shift treatment circuit is by phase shift chip U1, triode VT4, triode VT5, one end is connected with the VCC+ pin of phase shift chip U1, the resistance R14 that the other end is connected with the IN1 pin of phase shift chip U1, negative pole is connected with the IN1 pin of phase shift chip U1 after resistance R13, the polar capacitor C9 that positive pole is connected with the IN2 pin of phase shift chip U1, positive pole is connected with the NC pin of phase shift chip U1 after resistance R15, the polar capacitor C11 that negative pole is connected with the collector of triode VT4, positive pole is connected with the OUT pin of phase shift chip U1, the polar capacitor C10 of minus earth, one end is connected with the OUT pin of phase shift chip U1, the other end is as the potentiometer R16 of an output terminal of system, P pole is connected with the OFF1 pin of phase shift chip U1, the diode D4 that N pole is connected with the base stage of triode VT4, and P pole is connected with the OFF2 pin of phase shift chip U1, the diode D5 that N pole is connected with the emitter of triode VT5 forms, the VCC+ pin of described phase shift chip U1 is connected with two-stage low-pass filtering amplifying circuit, VCC-pin ground connection, OUT pin are connected with the sliding end of potentiometer R16, the emitter of triode VT4 is connected with the base stage of triode VT5, the collector of triode VT5 is as another output terminal of system, and the negative pole of electric capacity C9 is connected with the source electrode of field effect transistor K2.
3. a kind of phase shift New Image disposal system based on common source amplifying circuit according to claim 2, it is characterized in that: described booster circuit is by transformer T1, be arranged on the telefault L1 on the former limit of transformer T1, be arranged on the telefault L2 of transformer T1 secondary, the diode D1 that N pole is connected with driving circuit, P pole is connected with driving circuit with the Same Name of Ends of telefault L2 respectively after polar capacitor C1, and N pole is connected with the P pole of diode D1, the thyristor D2 of P pole ground connection forms; The Same Name of Ends of described telefault L1 is connected with circuit of output terminal, the non-same polarity ground connection of telefault L2; The non-same polarity of described telefault L1 together with the N pole of diode D1 as the input end of this system.
4. a kind of phase shift New Image disposal system based on common source amplifying circuit according to claim 3, it is characterized in that: described driving circuit is by driving chip U, the resistance R1 that one end is connected with the Same Name of Ends of telefault L2, the other end is connected with the COM pin of driving chip U, the electric capacity C2 that positive pole is connected with the RT pin of driving chip U, negative pole is connected with two-stage low-pass filtering amplifying circuit, and one end forms with the resistance R3 that VREF pin is connected, the other end is connected with treatment circuit of driving chip U; The VCC pin of described driving chip U is connected with the N pole of diode D1, INV pin is connected with treatment circuit, GND pin ground connection, PWM pin are connected with treatment circuit.
5. a kind of phase shift New Image disposal system based on common source amplifying circuit according to claim 4, is characterized in that: described treatment circuit comprises: triode VT1, resistance R4, resistance R5, resistance R2 and diode D3, the P pole of described diode D3 is connected with the Same Name of Ends of telefault L1 and the collector of triode VT1 respectively, its N pole is in turn through resistance R2, be connected with the emitter of triode VT1 after resistance R5 and resistance R4, the base stage of described triode VT1 is connected with the VREF pin of driving chip U after resistance R3, emitter is connected with the PWM pin of driving chip U, the tie point of resistance R4 and resistance R5 is connected with the INV pin of driving chip U and two-stage low-pass filtering amplifying circuit simultaneously, the N pole of diode D3 is also connected with two-stage low-pass filtering amplifying circuit, the tie point of resistance R2 and resistance R5 is connected with the negative pole of polar capacitor C2 and two-stage low-pass filtering amplifying circuit simultaneously.
6. a kind of phase shift New Image disposal system based on common source amplifying circuit according to claim 5, it is characterized in that: described two-stage low-pass filtering amplifying circuit is by amplifier P1, amplifier P2, triode VT2, triode VT3, positive pole is connected with the tie point of resistance R5 with resistance R2, the polar capacitor C4 of minus earth, one end is connected with the normal phase input end of amplifier P1, the resistance R6 that the other end is connected with the positive pole of polar capacitor C4, positive pole is connected with amplifier P1 inverting input after resistance R7, the polar capacitor C3 that negative pole is connected with the negative pole of polar capacitor C4, be serially connected in the polar capacitor C5 between the output terminal of amplifier P1 and inverting input, negative pole is connected with the output terminal of amplifier P1, the polar capacitor C6 that positive pole is connected with the base stage of triode VT2, one end is connected with the collector of triode VT2, the resistance R8 that the other end is connected with the emitter of triode VT3, positive pole is connected with the base stage of triode VT3 after resistance R9, the electric capacity C7 that negative pole is connected with the output terminal of amplifier P1 and the VCC+ pin of phase shift chip U1 simultaneously, one end is connected with the positive pole of polar capacitor C7, the resistance R10 that the other end is connected with the inverting input of amplifier P2, the resistance R11 be in parallel with resistance R10, be serially connected in the polar capacitor C8 between the output terminal of amplifier P2 and inverting input, and the resistance R12 be serially connected between the normal phase input end of amplifier P2 and output terminal forms, the emitter of described triode VT2 is connected with the negative pole of polar capacitor C7, and the collector of triode VT3 is connected with the normal phase input end of amplifier P2, and the output terminal of amplifier P2 is connected with the positive pole of polar capacitor C12.
7. a kind of phase shift New Image disposal system based on common source amplifying circuit according to claim 6, is characterized in that: described driving chip U is UC384X integrated chip.
8. a kind of phase shift New Image disposal system based on common source amplifying circuit according to claim 6, is characterized in that: described phase shift chip U1 is LM741 integrated chip.
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| CN201510317287.5A CN104916020A (en) | 2014-11-26 | 2015-06-10 | Novel phase-shifting type image processing system based on common source amplifying circuit |
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| CN201510317287.5A CN104916020A (en) | 2014-11-26 | 2015-06-10 | Novel phase-shifting type image processing system based on common source amplifying circuit |
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| CN105507737A (en) * | 2015-12-22 | 2016-04-20 | 成都雷纳斯科技有限公司 | High-sensitivity intelligent anti-theft system |
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| CN104410770A (en) * | 2014-11-26 | 2015-03-11 | 成都创图科技有限公司 | Novel phase-shift image processing system |
| CN104683659A (en) * | 2015-03-31 | 2015-06-03 | 宁波摩米创新工场电子科技有限公司 | Audion common emitter amplifying circuit-based high-precision image processing system |
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