CN104911700A - Satellite dish for improving wavelength yield of MOCVD (metal organic chemical vapor deposition) epitaxial wafer - Google Patents
Satellite dish for improving wavelength yield of MOCVD (metal organic chemical vapor deposition) epitaxial wafer Download PDFInfo
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- CN104911700A CN104911700A CN201510292660.6A CN201510292660A CN104911700A CN 104911700 A CN104911700 A CN 104911700A CN 201510292660 A CN201510292660 A CN 201510292660A CN 104911700 A CN104911700 A CN 104911700A
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- satellite dish
- film trap
- epitaxial wafer
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Abstract
The invention provides a satellite dish for improving the wavelength yield of a MOCVD (metal organic chemical vapor deposition) epitaxial wafer. A fixed bolt supporting small hole is formed in the back center of a satellite dish body, a center film trap is arranged in the front center of the satellite dish body, and a plurality of edge film traps are arranged on the front surface of the satellite dish body by taking the center film trap as a symmetric center. The satellite dish is characterized in that an inner groove is formed in the bottom of the center film trap. The temperature of a center film is reduced by virtue of the difference between a graphite disc and void thermal conductivity, the wavelength of the center film is increased, and the wavelengths of the center film and an edge film are consistent, so that the wavelength yield of the production of the epitaxial wafer is improved.
Description
Technical field
The present invention relates to GaN base LED epitaxial growth field, particularly a kind of satellite dish structure-design technique field of improving MOCVD epitaxy sheet wavelength yield.
Background technology
Third generation semiconductor material GaN, owing to having the excellent properties not available for many silicon-based semiconductor material, has been widely used in display, optical storage, Laser Printing, illumination and medical treatment and the field such as military.Especially in field of semiconductor illumination, the scale operation of GaN base LED has entered a new stage.The comparision of production of GaN base LED is complicated, comprise multiple links such as substrate material, epitaxial wafer, chip, encapsulation and application, wherein, the production of epitaxial wafer is the important step in whole LED industry chain, and the development of production to whole LED industry of epitaxial wafer has vital role.
At present, the scale operation of GaN base LED mainly adopts three kinds of technology, and nearly coupling SHOWERHEAD reaction chamber technology, planetary reaction chamber technology and high speed rotating reaction chamber technology, these three kinds of technology account for world market share about 90%.
In planetary reaction chamber technology, the front of satellite dish is provided with a center film trap and is arranged in some edges film trap of center pocket periphery, and the bottom centre position of satellite dish has one to support aperture and gim peg, satellite dish is connected with deep bid with gim peg by supporting aperture.Due to the difference of thermal conductivity between gim peg and graphite, satellite dish is shown, and temperature distributing disproportionation is even, the heating temperature being positioned at the centre slice of center film trap is inconsistent with the heating temperature of the edge piece being positioned at edge film trap, cause the wavelength of the epitaxial wafer made at center film trap to there is larger difference with the wavelength of the epitaxial wafer made in edge piece, namely cause epitaxial growth medium wavelength yield low.
Summary of the invention
For the deficiency of more design method, the invention provides a kind of satellite dish that effectively can improve MOCVD epitaxy sheet wavelength yield.
The present invention includes satellite disk body, offer gim peg at the center, the back side of satellite disk body and support aperture, in the front center of satellite disk body, a center film trap is set, with described center film trap for symmetry centre, arrange some edges film trap in the front of satellite disk body, feature of the present invention is: offer inner groovy in the bottom of described center film trap.
The present invention adopts the mode offering inner groovy in the bottom of center film trap, the centre slice being positioned at center film trap is gone to the bottom and with the bottom of center film trap, there is certain space, this space can reduce the difference of the heating temperature of centre slice and the heating temperature of edge piece, thus increase the wavelength of centre slice, make the consistent wavelength of the centre slice after processing and edge piece, thus improve the wavelength yield of epitaxial wafer production.Structure of the present invention is simple, practical.
The degree of depth of described inner groovy is 10 ~ 1000 microns, and diameter is 0.1 ~ 50 millimeter.In order to reduce the temperature difference of being heated of centre slice and edge piece, the design of the degree of depth of the present invention and diameter can determine according to the actual temperature difference of centre slice and edge piece.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation that the present invention is engaged in the extension processing sets up that graphite plate is formed.
Embodiment
As shown in Figure 1, graphite plate 100 has the cylinder shape groove 101 for supporting satellite dish disk body 102 of the present invention, there is bottom groove 101 the annular wire casing 109 that satellite dish disk body 102 can be made to rotate, the bottom centre position of cylinder shape groove 101 has a cylindrical hole 108, to install gim peg 107.
The center, the back side of satellite dish disk body 102 offers gim peg and supports aperture 106, the upper end side of above gim peg 107 is inserted into this gim peg and supports in aperture 106, and satellite dish disk body 102 of the present invention is supported in the cylinder shape groove 101 of graphite plate 100 by gim peg 107.
The front center of satellite dish disk body 102 arranges a center film trap 105, with center film trap 105 for symmetry centre, arranges some edges film trap 103 in the front of satellite disk body 102.
Offer inner groovy 104 in the bottom of center film trap 105, the degree of depth h of inner groovy 104 is 10 ~ 1000 microns, and inner groovy 104 can be cross section is circular cylindricality, and the diameter d of inner groovy 104 is 0.1 ~ 50 millimeter.
The shape of inner groovy 104 is not limited to cylindrical, also can be prismatic other shape such as grade.
Claims (3)
1. one kind is improved the satellite dish of MOCVD epitaxy sheet wavelength yield, comprise satellite disk body, offer gim peg at the center, the back side of satellite disk body and support aperture, in the front center of satellite disk body, a center film trap is set, with described center film trap for symmetry centre, arrange some edges film trap in the front of satellite disk body, it is characterized in that: offer inner groovy in the bottom of described center film trap.
2. improve the satellite dish of MOCVD epitaxy sheet wavelength yield according to claim 1, it is characterized in that: the degree of depth of described inner groovy is 10 ~ 1000 microns.
3. according to claim 1 or 2, improve the satellite dish of MOCVD epitaxy sheet wavelength yield, it is characterized in that: described inner groovy is cross section is circular cylindricality, and the diameter of described inner groovy is 0.1 ~ 50 millimeter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510292660.6A CN104911700A (en) | 2015-06-02 | 2015-06-02 | Satellite dish for improving wavelength yield of MOCVD (metal organic chemical vapor deposition) epitaxial wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510292660.6A CN104911700A (en) | 2015-06-02 | 2015-06-02 | Satellite dish for improving wavelength yield of MOCVD (metal organic chemical vapor deposition) epitaxial wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104911700A true CN104911700A (en) | 2015-09-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510292660.6A Pending CN104911700A (en) | 2015-06-02 | 2015-06-02 | Satellite dish for improving wavelength yield of MOCVD (metal organic chemical vapor deposition) epitaxial wafer |
Country Status (1)
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| CN (1) | CN104911700A (en) |
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| CN202543389U (en) * | 2011-11-18 | 2012-11-21 | 上海蓝光科技有限公司 | Graphite plate for improving wavelength uniformity of 4-inch epitaxial wafer in metal organic chemical vapor deposition (MOCVD) cabinet |
| JP2014019596A (en) * | 2012-07-17 | 2014-02-03 | Mitsubishi Electric Corp | Epitaxial growth apparatus, silicon carbide epitaxial wafer, and manufacturing method for silicon carbide epitaxial wafer |
| CN103614707A (en) * | 2013-11-25 | 2014-03-05 | 扬州中科半导体照明有限公司 | Graphite plate for improving uniformity of MOCVD (Metal Organic Chemical Vapor Deposition) epitaxial wafer |
| CN203582971U (en) * | 2013-11-25 | 2014-05-07 | 扬州中科半导体照明有限公司 | Graphite plate for improving uniformity of MOCVD (Metal Organic Chemical Vapor Deposition) epitaxial wafer |
| CN203820925U (en) * | 2014-04-24 | 2014-09-10 | 扬州中科半导体照明有限公司 | MOCVD (Metal Organic Chemical Vapor Deposition) graphite tray |
| CN203820884U (en) * | 2014-04-24 | 2014-09-10 | 扬州中科半导体照明有限公司 | Graphite disc for improving uniformity of MOCVD (Metal Organic Chemical Vapor Deposition) epitaxial wafers |
| CN203820926U (en) * | 2014-04-24 | 2014-09-10 | 扬州中科半导体照明有限公司 | Practical graphite plate capable of improving uniformity of MOCVD epitaxial wafer |
| CN204714941U (en) * | 2015-06-02 | 2015-10-21 | 扬州中科半导体照明有限公司 | A kind of satellite dish improving MOCVD epitaxy sheet wavelength yield |
-
2015
- 2015-06-02 CN CN201510292660.6A patent/CN104911700A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1647244A (en) * | 2002-04-08 | 2005-07-27 | 克里公司 | Gas driven planetary rotation apparatus and methods for forming silicon carbide layers |
| CN1558001A (en) * | 2002-12-30 | 2004-12-29 | 奥斯兰姆奥普托半导体有限责任公司 | Substrate holder |
| CN202543389U (en) * | 2011-11-18 | 2012-11-21 | 上海蓝光科技有限公司 | Graphite plate for improving wavelength uniformity of 4-inch epitaxial wafer in metal organic chemical vapor deposition (MOCVD) cabinet |
| JP2014019596A (en) * | 2012-07-17 | 2014-02-03 | Mitsubishi Electric Corp | Epitaxial growth apparatus, silicon carbide epitaxial wafer, and manufacturing method for silicon carbide epitaxial wafer |
| CN103614707A (en) * | 2013-11-25 | 2014-03-05 | 扬州中科半导体照明有限公司 | Graphite plate for improving uniformity of MOCVD (Metal Organic Chemical Vapor Deposition) epitaxial wafer |
| CN203582971U (en) * | 2013-11-25 | 2014-05-07 | 扬州中科半导体照明有限公司 | Graphite plate for improving uniformity of MOCVD (Metal Organic Chemical Vapor Deposition) epitaxial wafer |
| CN203820925U (en) * | 2014-04-24 | 2014-09-10 | 扬州中科半导体照明有限公司 | MOCVD (Metal Organic Chemical Vapor Deposition) graphite tray |
| CN203820884U (en) * | 2014-04-24 | 2014-09-10 | 扬州中科半导体照明有限公司 | Graphite disc for improving uniformity of MOCVD (Metal Organic Chemical Vapor Deposition) epitaxial wafers |
| CN203820926U (en) * | 2014-04-24 | 2014-09-10 | 扬州中科半导体照明有限公司 | Practical graphite plate capable of improving uniformity of MOCVD epitaxial wafer |
| CN204714941U (en) * | 2015-06-02 | 2015-10-21 | 扬州中科半导体照明有限公司 | A kind of satellite dish improving MOCVD epitaxy sheet wavelength yield |
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Application publication date: 20150916 |
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| RJ01 | Rejection of invention patent application after publication |