CN104901635B - A kind of low noise PSSR amplifier circuits - Google Patents
A kind of low noise PSSR amplifier circuits Download PDFInfo
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- CN104901635B CN104901635B CN201510313431.8A CN201510313431A CN104901635B CN 104901635 B CN104901635 B CN 104901635B CN 201510313431 A CN201510313431 A CN 201510313431A CN 104901635 B CN104901635 B CN 104901635B
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Abstract
Present invention is disclosed a kind of low noise PSSR amplifier circuits, current source, the third stage amplifier to be connected by common source, which connects, to be formed, wherein current source is the cascode current source being made of field-effect tube P2, P3, P6, P7, N5, N6 and is equipped with load, first order amplifier has the differential pair tube being made of field-effect tube M1, M2, load is made of resistance R1, R2, a termination V of resistance R1SSPotential point, the other end of resistance R1 and the drain electrode of the source electrode of field-effect tube N5 and field-effect tube M1 mutually couple, a termination V of resistance R2SSPoint site, the other end of resistance R2 and the drain electrode of the source electrode of field-effect tube N6 and field-effect tube M2 mutually couple, and the common gate of field-effect tube N5, N6 is connected with the drain electrode of field-effect tube N5, and the drain electrode of two field-effect tube is respectively connected to the differential input end of second level amplifier.Beneficial effects of the present invention, load are improved Noise figure, have the characteristics that low noise, significantly improved the power supply rejection ratio of circuit, and of low cost using resistance in parallel.
Description
Technical field
The present invention relates to a kind of low noise PSSR amplifier circuits, belong to integrated electronic circuit design field.
Background technology
Low noise is always the difficult point designed in cmos amplifier design.Thermal noise is contained in cmos device and flicker is made an uproar
Sound, for high-gain, wide input common mode, commonly used Foldable cascade design, electric in this design in first order amplifier
It is very big to flow source noise accounting in noise list, increase its area and less mutual conductance be required for paying performance cost and improve into
This.
Invention content
In view of the problems of the above-mentioned prior art, the purpose of the present invention is to propose to a kind of low noise PSSR amplifiers electricity
Road.
In order to achieve the above object, the technical solution adopted in the present invention is：A kind of low noise PSSR amplifier circuits, by
Current source, first order amplifier, second level amplifier and the third level amplifier that common source connects connect composition, wherein the electric current
Source is made of field-effect tube P2, field-effect tube P3, field-effect tube P6, field-effect tube P7, field-effect tube N5, field-effect tube N6
Cascode current source and load is equipped with, the first order amplifier has what is be made of field-effect tube M1 and field-effect tube M2
Differential pair tube,
Particularly, the load is made of resistance R1 and resistance R2,
A termination V of the resistance R1SSPotential point, the other end of resistance R1 and the source electrode and field-effect tube of field-effect tube N5
The drain electrode of M2 mutually couples,
A termination V of the resistance R2SSPotential point, the other end of resistance R2 and the source electrode and field-effect tube of field-effect tube N6
The drain electrode of M1 mutually couples,
The common gate of the field-effect tube N5 and field-effect tube N6 is connected with the drain electrode of field-effect tube N5, and two field-effects
The drain electrode of pipe is respectively connected to the differential input end of second level amplifier.
Further, in the current source, field-effect tube P2 is connected with field-effect tube P3 cascades, field-effect tube P2's
It drains and is mutually coupled with the source electrode of field-effect tube P6, the drain electrode of field-effect tube P6 is mutually coupled with the drain electrode of field-effect tube N5, field-effect
The drain electrode of pipe P3 and the source electrode of field-effect tube P7 mutually couple, and the drain electrode of field-effect tube P7 is mutually coupled with the drain electrode of field-effect tube N6,
Field-effect tube P6 is total to grid with field-effect tube P7 and is connected, and field-effect tube N5 is total to grid with field-effect tube N6 and is connected.
Further, the first order amplifier further includes the drain electrode of field-effect tube P1, the field-effect tube P1 and field is imitated
Should pipe M1, field-effect tube M2 common source mutually couple.
Further, the second level amplifier includes field-effect tube P4, field-effect tube N7, field-effect tube N8, field-effect
The drain electrode of pipe M21 and field-effect tube M22, the field-effect tube P4 and field-effect tube M21, the common source phase coupling of field-effect tube M22
It connects, the common drain of the grid and field-effect tube P7, field-effect tube N6 of the field-effect tube M21 mutually couples, the leakage of field-effect tube M21
The common gate of the drain electrode of pole and field-effect tube N7, field-effect tube N7 and field-effect tube N8 mutually couples, the grid of the field-effect tube M22
Pole and the common gate of the common drain of field-effect tube P6 and field-effect tube N5, field-effect tube N5 and field-effect tube N6 mutually couple, field effect
Should the drain electrode of pipe M22 mutually coupled with the drain electrode of field-effect tube N8, the field-effect tube N7 connect V with the source electrode of field-effect tube N8SS
Potential point.
Further, the third level amplifier includes the field-effect tube P5 and field-effect tube M3 that leakage is connected altogether, the field
The grid of effect pipe M3 is mutually coupled with the common drain of field-effect tube M22 and field-effect tube N8, and the source electrode of field-effect tube M3 meets VSS
Potential point.
Beneficial effects of the present invention：Load uses resistance in parallel, improves Noise figure, has the characteristics that low noise,
The power supply rejection ratio of circuit is significantly improved, and of low cost.
Description of the drawings
Fig. 1 is a kind of schematic diagram of low noise PSSR amplifier circuits of the present invention.
Specific embodiment
As shown in Figure 1, a kind of low noise PSSR amplifier circuits, the current source to be connected by common source, first order amplifier,
Two-stage amplifier and third level amplifier connect composition, and wherein current source is by field-effect tube P2, field-effect tube P3, field-effect tube
P6, field-effect tube P7, field-effect tube N5, field-effect tube N6 composition cascode current source and be equipped with load, the first order is put
Big utensil is loaded and is made of resistance R1 and resistance R2 by the differential pair tube being made of field-effect tube M1 and field-effect tube M2, resistance
R1 and resistance R2 is parallel-connection structure, and the noise characteristic of resistance is better than MOS device, so load can realize low noise, resistance R1's
One termination VSSPotential point, the other end of resistance R1 and the drain electrode of the source electrode of field-effect tube N5 and field-effect tube M2 mutually couple, resistance
A termination V of R2SSPotential point, the other end of resistance R2 and the drain electrode of the source electrode of field-effect tube N6 and field-effect tube M1 mutually couple,
The common gate of field-effect tube N5 and field-effect tube N6 are connected with the drain electrode of field-effect tube N5, and the drain electrode difference of two field-effect tube
Access the differential input end of second level amplifier, the side that field-effect tube N5 is connected with the common gate of field-effect tube N6 using diode
Formula can eliminate power supply noise influence.
The current source of the present invention is refined, field-effect tube P2 is connected with field-effect tube P3 cascades, the leakage of field-effect tube P2
Pole and the source electrode of field-effect tube P6 mutually couple, and the drain electrode of field-effect tube P6 is mutually coupled with the drain electrode of field-effect tube N5, field-effect tube
The drain electrode of P3 and the source electrode of field-effect tube P7 mutually couple, and the drain electrode of field-effect tube P7 is mutually coupled with the drain electrode of field-effect tube N6, field
Effect pipe P6 is total to grid with field-effect tube P7 and is connected, and field-effect tube N5 is total to grid with field-effect tube N6 and is connected.
First order amplifier is optimized, first order amplifier further includes field-effect tube P1, the drain electrode of field-effect tube P1
It is mutually coupled with the common source of field-effect tube M1, field-effect tube M2.
Second level amplifier is optimized, second level amplifier includes field-effect tube P4, field-effect tube N7, field-effect tube
N8, field-effect tube M21 and field-effect tube M22, drain electrode and field-effect tube M21, the common source of field-effect tube M22 of field-effect tube P4
It mutually couples, the common drain of the grid and field-effect tube P7, field-effect tube N6 of field-effect tube M21 mutually couples, the leakage of field-effect tube M21
The common gate of the drain electrode of pole and field-effect tube N7, field-effect tube N7 and field-effect tube N8 mutually couples, the grid of field-effect tube M22 with
Field-effect tube P6 is mutually coupled with common drain, the field-effect tube N5 of field-effect tube N5 with the common gate of field-effect tube N6, field-effect tube
The drain electrode of M22 and the drain electrode of field-effect tube N8 mutually couple, and the field-effect tube N7 connect V with the source electrode of field-effect tube N8SSCurrent potential
Point.
Third level amplifier is optimized, third level amplifier includes the field-effect tube P5 and field-effect tube that leakage is connected altogether
The grid of M3, the field-effect tube M3 are mutually coupled with the common drain of field-effect tube M22 and field-effect tube N8, and field-effect tube M3
Source electrode meets VSSPotential point.
In addition to the implementation, the present invention can also have other embodiment, all to use equivalent substitution or equivalent transformation shape
Into technical solution, be all fallen within scope of the present invention.
Claims (5)
1. a kind of low noise PSSR amplifier circuits, the current source to be connected by common source, first order amplifier, second level amplifier and
Third level amplifier connects composition, wherein
The current source is to be imitated by field-effect tube P2, field-effect tube P3, field-effect tube P6, field-effect tube P7, field-effect tube N5, field
Should pipe N6 composition cascode current source and be equipped with load, the first order amplifier have by field-effect tube M1 and field effect
Should pipe M2 composition differential pair tube,
It is characterized in that：The load is made of resistance R1 and resistance R2,
A termination V of the resistance R1SSPotential point, the other end of resistance R1 and the source electrode of field-effect tube N5 and field-effect tube M2's
Drain electrode mutually couples,
A termination V of the resistance R2SSPotential point, the other end of resistance R2 and the source electrode of field-effect tube N6 and field-effect tube M1's
Drain electrode mutually couples,
The common gate of the field-effect tube N5 and field-effect tube N6 is connected with the drain electrode of field-effect tube N5, and two field-effect tube
Drain electrode is respectively connected to the differential input end of second level amplifier.
2. a kind of low noise PSSR amplifier circuits according to claim 1, it is characterised in that：In the current source, field
Effect pipe P2 is connected with field-effect tube P3 cascades, and the drain electrode of field-effect tube P2 is mutually coupled with the source electrode of field-effect tube P6, field
The drain electrode of effect pipe P6 is mutually coupled with the drain electrode of field-effect tube N5, the drain electrode of field-effect tube P3 and the source electrode phase coupling of field-effect tube P7
It connects, the drain electrode of field-effect tube P7 is mutually coupled with the drain electrode of field-effect tube N6, and field-effect tube P6 is total to grid with field-effect tube P7 and is connected, field
Effect pipe N5 is total to grid with field-effect tube N6 and is connected.
3. a kind of low noise PSSR amplifier circuits according to claim 1, it is characterised in that：The first order amplifier
The drain electrode and the common source of field-effect tube M1, field-effect tube M2 for further including field-effect tube P1, the field-effect tube P1 mutually couple.
4. a kind of low noise PSSR amplifier circuits according to claim 1, it is characterised in that：The second level amplifier
Including field-effect tube P4, field-effect tube N7, field-effect tube N8, field-effect tube M21 and field-effect tube M22, the field-effect tube P4
Drain electrode and the common source of field-effect tube M21, field-effect tube M22 mutually couple, the grid and field-effect tube of the field-effect tube M21
P7, field-effect tube N6 common drain mutually couple, the drain electrode of field-effect tube M21 and the drain electrode of field-effect tube N7, field-effect tube N7 and
The common gate of field-effect tube N8 mutually couples, the grid of the field-effect tube M22 and the common leakage of field-effect tube P6 and field-effect tube N5
Pole, field-effect tube N5 are mutually coupled with the common gate of field-effect tube N6, the drain electrode of field-effect tube M22 and the drain electrode phase of field-effect tube N8
Coupling, the field-effect tube N7 connect V with the source electrode of field-effect tube N8SSPotential point.
5. a kind of low noise PSSR amplifier circuits according to claim 1, it is characterised in that：The third level amplifier
Grid including the connected field-effect tube P5 of common leakage and field-effect tube M3, the field-effect tube M3 is imitated with field-effect tube M22 and field
Should the common drain of pipe N8 mutually couple, and the source electrode of field-effect tube M3 meets VSSPotential point.
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| CN201510313431.8A CN104901635B (en) | 2015-06-10 | 2015-06-10 | A kind of low noise PSSR amplifier circuits |
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| CN201510313431.8A CN104901635B (en) | 2015-06-10 | 2015-06-10 | A kind of low noise PSSR amplifier circuits |
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| CN104901635B true CN104901635B (en) | 2018-06-19 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104410942A (en) * | 2014-11-26 | 2015-03-11 | 成都创图科技有限公司 | Phase shift type audio processing system by low-pass filtering and amplification |
| CN107645280A (en) * | 2016-07-21 | 2018-01-30 | 成都锐成芯微科技股份有限公司 | High speed amplifying circuit |
| CN107332525A (en) * | 2017-08-01 | 2017-11-07 | 深圳市中移联半导体科技有限公司 | A kind of superelevation PSRR power amplification device |
| CN108683167B (en) * | 2018-07-03 | 2024-04-09 | 苏州锴威特半导体股份有限公司 | Anti-surge circuit of PD equipment |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102790593A (en) * | 2012-08-08 | 2012-11-21 | 江苏物联网研究发展中心 | Parallel-resistance feedback differential low-noise amplifier |
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| US7902923B2 (en) * | 2009-03-19 | 2011-03-08 | Qualcomm, Incorporated | Common-gate common-source amplifier |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102790593A (en) * | 2012-08-08 | 2012-11-21 | 江苏物联网研究发展中心 | Parallel-resistance feedback differential low-noise amplifier |
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Address after: Xinghu Street Industrial Park of Suzhou city in Jiangsu province 215123 No. 328 Creative Industry Park 2-B304-1 Applicant after: Scarlett Ruipu microelectronics technology (Suzhou) Limited by Share Ltd Address before: Xinghu Street Industrial Park of Suzhou city in Jiangsu province 215123 No. 328 Creative Industry Park 2-B304-1 Applicant before: Scarlett Ruipu microelectronics technology (Suzhou) Co., Ltd. |
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