CN104880678B - A kind of magnetic sensing device and its preparation process - Google Patents
A kind of magnetic sensing device and its preparation process Download PDFInfo
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- CN104880678B CN104880678B CN201410071699.0A CN201410071699A CN104880678B CN 104880678 B CN104880678 B CN 104880678B CN 201410071699 A CN201410071699 A CN 201410071699A CN 104880678 B CN104880678 B CN 104880678B
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Abstract
Present invention is disclosed a kind of magnetic sensing device and its preparation process, the magnetic sensing device includes third direction magnetic sensing element, and the third direction magnetic sensing element includes substrate, magnetic conduction unit, sensing unit.Substrate surface is provided with groove；Magnetic conduction unit includes at least two magnetic conduction subelements；The part of magnetic conduction unit is set in groove, and has part to expose groove, and dielectric material is equipped between adjacent two magnetic conduction subelements；The magnetic signal is output to sensing unit and measured by magnetic conduction unit to incude the magnetic signal of third direction；Sensing unit is set on the substrate surface, to measure the magnetic field of first direction or/and second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure the third direction magnetic field that first direction or/and second direction measurement are directed to by magnetic conduction unit.The present invention improves sensing capability and the sensitivity of magnetic sensing device by increasing the quantity of the magnetic material layer of Z axis magnetic conduction unit to increase the sensing capability of Z axis.
Description
Technical field
The invention belongs to semiconductor devices and technology fields, are related to a kind of magnetic sensing device more particularly to a kind of magnetic
The preparation process of sensing device.
Background technology
Magnetic Sensor can be divided into following a few classes according to its principle：Hall element, magnetodiode, anisotropic magnetic resistance
Element (AMR), tunnel knot magnetic resistance (TMR) element and giant magnetoresistance (GMR) element, induction coil, superconductive quantum interference magnetometer etc..
Electronic compass is one of important applied field of Magnetic Sensor, with the fast development of consumer electronics in recent years, is removed
Except navigation system, also more and more smart mobile phones and tablet computer also begin to standard configuration electronic compass, brought to user
Prodigious application facility, in recent years, the demand of Magnetic Sensor are also begun to from two axial three axis development.The Magnetic Sensor of two axis, i.e.,
Plane Magnetic Sensor can be used for measuring magnetic field intensity and the direction in plane, can be indicated with X and Y-axis both direction.
The operation principle of existing Magnetic Sensor introduced below.Magnetic Sensor uses anisotropic magnetoresistance
(Anisotropic Magneto-Resistance) material detects the size of magnetic induction intensity in space.It is this that there is crystal
The alloy material of structure is very sensitive to extraneous magnetic field, and the strong and weak variation in magnetic field can cause AMR self-resistance values to change.
In manufacture, application process, a high-intensity magnetic field, which is added on AMR units, makes it magnetize in one direction, establishes
A main magnetic domain is played, the axis vertical with main magnetic domain is referred to as the sensitive axes of the AMR, as shown in Figure 1.In order to make measurement result with line
Property mode change, the plain conductor on AMR material is in 45° angle oblique arrangement, and electric current is upper from these conducting wires and AMR material
It crosses, as shown in Figure 2；The main magnetic domain and sense of current set up on AMR material by initial high-intensity magnetic field have 45 ° of folder
Angle.
When there are external magnetic field Ha, main magnetic domain direction will change and no longer be initial direction on AMR units,
So the angle theta of magnetic direction M and electric current I can also change, as shown in Figure 3.For AMR material, the variation meeting at the angles θ
Cause the variation of AMR itself resistance values, as shown in Figure 4.
By the measurement changed to AMR cell resistances, external magnetic field can be obtained.In actual application, in order to improve
The sensitivity etc. of device, Magnetic Sensor can utilize the variation of Wheatstone bridge detection AMR resistance values, as shown in Figure 5.R1/R2/R3/
R4 is the identical AMR resistance of original state, and when detecting external magnetic field, R1/R2 resistance values increase Δ R and R3/R4 is reduced
ΔR.In this way in the case of no external magnetic field, the output of electric bridge is zero；And when there is external magnetic field, the output of electric bridge is one
A small voltage Δ V.
Current three-axis sensor be by a plane (two axis of X, Y) sensing element and the magnetic sensing element of Z-direction into
Row system in package is combined, with realize three axis sensing function (can refer to United States Patent (USP) US5247278,
US5952825、US6529114、US7126330、US7358722)；That is it needs plane sensing element and Z-direction magnetic
Sensing element is respectively arranged on two wafers or chip, is linked together finally by encapsulation.Currently, in single wafer/chip
On can not realize the manufacture of three-axis sensor simultaneously.
In order to allow magnetic sensor to be set on a wafer or chip, the applicant was on December 24th, 2012
Apply for a patent of invention, it is entitled《A kind of preparation process of magnetic sensing device》, Patent No. 201210563952.5；It should
In technique, magnetic conduction unit is set in groove, magnetic conduction unit is used to incude the magnetic field of Z-direction；Sensing unit is close to groove
Setting, can receive the signal of magnetic conduction unit, and go out the magnetic field of Z-direction according to the signal measurement.
However, the magnetic conduction unit usually in groove only includes one layer of magnetic texure so that the sensitivity of device is bad, spirit
It still needs further improvement for sensitivity and precision.
In view of this, nowadays there is an urgent need to design a kind of new magnetic sensing device preparation process, to overcome existing magnetic to pass
The drawbacks described above of induction device.
Invention content
The technical problem to be solved by the present invention is to：A kind of magnetic sensing device is provided, the induction of magnetic sensing device can be improved
Ability and sensitivity.
In addition, the present invention also provides a kind of preparation process of magnetic sensing device, the induction of obtained magnetic sensing device can be improved
Ability and sensitivity.
In order to solve the above technical problems, the present invention adopts the following technical scheme that：
A kind of magnetic sensing device, the magnetic sensing device include third direction magnetic sensing element, and the third direction magnetic passes
Feeling component includes：
Substrate, surface are provided with groove；
It is single to include at least the first magnetic conduction subelement, the second magnetic conduction for magnetic conduction unit, including at least two magnetic conduction subelements
Member, each magnetic conduction subelement are arranged in order along the depth direction of groove, and dielectric material is equipped between adjacent two magnetic conduction subelements；
The part of each magnetic conduction subelement is set in groove；The main part of the first magnetic conduction subelement is set in groove, and is had
Expose groove to substrate surface in part；The major part of the second magnetic conduction subelement is set in groove, and the second magnetic conduction is single
Member is set to the top of the first magnetic conduction subelement, and first medium material is equipped between the second magnetic conduction subelement and the first magnetic conduction subelement
Material；The magnetic signal is output to sensing unit and measured by the magnetic conduction unit to incude the magnetic signal of third direction；
Sensing unit exposes the part setting of groove close to magnetic conduction unit, is set between being connect with magnetic conduction unit or both
There is gap, to measure the magnetic field of first direction or/and second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, quilt can be measured
The third direction magnetic field that magnetic conduction unit is directed to first direction or/and second direction measures；First direction, second direction, third
Direction is mutually perpendicular to two-by-two；The sensing unit includes electrode layer and an inductor unit, and inductor unit is close to the top
Magnetic conduction subelement setting；The magnetic signal of each magnetic conduction subelement induction third direction, and the magnetic signal is output to inductor
Unit measures；The inductor unit measures the magnetic field of first direction or/and second direction, defeated in conjunction with each magnetic conduction subelement
The magnetic signal gone out can coordinate electrode layer to measure and be directed to first direction or/and the third direction of second direction by magnetic conduction subelement
Magnetic field.
A kind of magnetic sensing device, the magnetic sensing device include third direction magnetic sensing element, and the third direction magnetic passes
Feeling component includes：
Substrate, surface are provided with groove；
The depth of magnetic conduction unit, including at least two magnetic conduction subelements, which part or whole magnetic conduction subelements along groove
Direction is superposed；The part of magnetic conduction unit is set in groove, and has part to expose groove, adjacent two magnetic conduction subelements
Between be equipped with dielectric material；The magnetic signal is output to induction by the magnetic conduction unit to incude the magnetic signal of third direction
Unit measures；
Sensing unit exposes the part setting of groove close to magnetic conduction unit, to measure first direction or/and second direction
Magnetic field, in conjunction with magnetic conduction unit export magnetic signal, can measure by magnetic conduction unit be directed to first direction or/and second direction survey
The third direction magnetic field of amount；First direction, second direction, third direction are mutually perpendicular to two-by-two.
As a preferred embodiment of the present invention, the sensing unit includes electrode layer and more than one inductor unit,
Each inductor unit is arranged respectively close to corresponding magnetic conduction subelement；
The magnetic signal of each magnetic conduction subelement induction third direction, and the magnetic signal is output to corresponding inductor unit
It measures；Each inductor unit measures the magnetic field of first direction or/and second direction, is exported in conjunction with corresponding magnetic conduction subelement
Magnetic signal can coordinate electrode layer to measure the third direction magnetic field for being directed to first direction or/and second direction by magnetic conduction subelement；
The magnetic conduction unit includes several magnetic conduction subelements, the first magnetic conduction subelement, the second magnetic conduction subelement conduct
Two of which magnetic conduction subelement；
The main part of each magnetic conduction subelement is set in groove, the main part of magnetic conduction subelement and the folder of base plane
Angle is 45 °~90 °；It is separated by dielectric material between each magnetic conduction subelement.
As a preferred embodiment of the present invention, the magnetic conduction unit only includes two magnetic conduction subelements, i.e. the first magnetic conduction
Subelement, the second magnetic conduction subelement, the second magnetic conduction subelement are set to the top of the first magnetic conduction subelement；
The main part of the first magnetic conduction subelement is set in groove, and has part to expose groove to substrate surface；
The major part of the second magnetic conduction subelement is set in groove, and the second magnetic conduction subelement and the first magnetic conduction are single
First medium material is equipped between member, first medium material layer is set on the first magnetic conduction subelement；First medium material layer
Major part is located in groove.
As a preferred embodiment of the present invention, the second magnetic conduction subelement is set to the first medium material layer
The angle of side wall, the second magnetic conduction subelement main part and substrate panel plane is 45 °~90 °；
The magnetic conduction unit further includes second medium material layer；The second medium material layer consolidates the second magnetic conduction subelement
It is scheduled between the first medium material layer and second medium material layer.
As a preferred embodiment of the present invention, the sensing unit includes electrode layer and an inductor unit, induction
Magnetic conduction subelement of the subelement close to the top is arranged.
As a preferred embodiment of the present invention, the magnetic sensing device further includes first direction magnetic sensing element, second
Direction magnetic sensing element, be respectively intended to induction first direction, second direction magnetic field；The first direction, second direction, third
Direction is respectively X-axis, Y-axis, Z axis.
A kind of preparation process of magnetic sensing device, the preparation process include preparing the step of third direction magnetic sensing element
Suddenly, specifically comprise the following steps：
Step S1, groove is set on the surface of substrate；
Step S2, the first magnetic material is being deposited comprising fluted substrate surface, is forming one layer or more first magnetic material
The bed of material；
Step S3, first medium material is deposited, first medium material layer is formed, first medium material is insulating materials；
Step S4, the second magnetic material is deposited, the second magnetic material layer is formed；Second magnetic material layer is equipped with or does not set
Matcoveredn；
Step S5, second medium material is deposited, second medium material layer is formed, is located at first medium material layer to protect
Second magnetic material of side wall；
Step S7, photoresist is deposited, is exposed, development；
Step S8, etching forms sensor pattern, removes part magnetic material, removes photoresist；Shape is distinguished in substrate
At the magnetic material layer of sensing unit, magnetic conduction unit；The part of magnetic conduction unit is set in groove, and has part to expose groove；
Magnetic conduction unit includes that at least two magnetic conduction subelements, which part or whole magnetic conduction subelements are set along the depth direction superposition of groove
It sets, dielectric material is equipped between adjacent two magnetic conduction subelements；The magnetic conduction unit to incude the magnetic signal of third direction,
And the magnetic signal is output to sensing unit and is measured；Sensing unit positioned at the second magnetic material layer is formed in outside groove,
Sensing unit, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure quilt to measure the magnetic field of first direction or/and second direction
The third direction magnetic field that magnetic conduction unit is directed to first direction or/and second direction measures；First direction, second direction, third
Direction is mutually perpendicular to two-by-two；
Step S9, third dielectric material is deposited；
Step S10, contact window is formed by photoetching process and etching technics；
Step S11, deposited metal layer, and etch, form the electrode layer of sensing unit.
As a preferred embodiment of the present invention, the method further includes step S12, form subsequent insulating medium layer and
Metal layer and passivation layer.
As a preferred embodiment of the present invention, the step S5 and step S7 further includes step S6：Continue deposited magnetic
Material, dielectric material；So that magnetic conduction unit forms three layers or more of magnetic material layer.
As a preferred embodiment of the present invention, the preparation process includes the steps that preparing X-axis, Y-axis magnetic sensing element.
A kind of preparation process of magnetic sensing device, the preparation process include preparing the step of third direction magnetic sensing element
Suddenly, specifically comprise the following steps：
Groove is arranged on the surface of substrate in step 1；
Step 2 is depositing the first magnetic material comprising fluted substrate surface, forms the first magnetic material layer；Then
Deposit insulating dielectric materials layer；
One layer or more of magnetic material layer of step 3, depositing subsequent, deposition has dielectric on every layer of magnetic material layer
Material layer；
Step 4, deposition photoresist, expose, development；
Step 5, etching form sensor pattern, remove part magnetic material, remove photoresist；It is respectively formed in substrate
Magnetic material layer, the magnetic conduction unit of sensing unit；The part of magnetic conduction unit is set in groove, and has part to expose groove；It leads
Magnetic cell includes that at least two magnetic conduction subelements, which part or whole magnetic conduction subelements are set along the depth direction superposition of groove
It sets, dielectric material is equipped between adjacent two magnetic conduction subelements；The magnetic conduction unit to incude the magnetic signal of third direction,
And the magnetic signal is output to sensing unit and is measured；Sensing unit positioned at last layer of magnetic material layer is formed in groove
Outside, sensing unit, in conjunction with the magnetic signal that magnetic conduction unit exports, can be surveyed to measure the magnetic field of first direction or/and second direction
Amount is by the third direction magnetic field that magnetic conduction unit is directed to first direction or/and second direction measures；First direction, second direction,
Third direction is mutually perpendicular to two-by-two；
Step 6, deposition third dielectric material；
Step 7 forms contact window by photoetching process and etching technics；
Step 8, deposited metal layer, and etch, form the electrode layer of sensing unit.
The beneficial effects of the present invention are：Magnetic sensing device and its preparation process proposed by the present invention, by increasing Z axis
The quantity of the magnetic material layer of (magnetic conduction unit), to increase the sensing capability of Z axis.Therefore, magnetic sensing dress can be improved in the present invention
The sensing capability set and sensitivity.
Description of the drawings
Fig. 1 is the schematic diagram of the magnetic material of existing Magnetic Sensor.
Fig. 2 is the magnetic material of existing Magnetic Sensor and the structural schematic diagram of conducting wire.
Fig. 3 is the angle schematic diagram of magnetic direction and current direction.
Fig. 4 is the θ-R characteristic curve schematic diagrames of magnetic material.
Fig. 5 is the connection figure of Wheatstone bridge.
Fig. 6 is the schematic diagram after the step of preparation process S5 of magnetic sensing device.
Fig. 7 is the schematic diagram after the step of preparation process S7 of magnetic sensing device.
Fig. 8 is the structural schematic diagram of magnetic sensing device of the present invention.
Specific implementation mode
The preferred embodiment that the invention will now be described in detail with reference to the accompanying drawings.
Embodiment one
Referring to Fig. 8, present invention is disclosed a kind of magnetic sensing device, described device includes third direction magnetic sensing element (Z
Axle sensor), the third direction magnetic sensing element includes：Substrate 1, magnetic conduction unit, sensing unit.The surface of substrate 1 is provided with
The major part of groove 2, magnetic conduction unit is set in the groove 2.
Specifically, magnetic conduction unit includes the first magnetic conduction subelement 41, the second magnetic conduction subelement 42, and the first magnetic conduction is single
The main part of member 41 is set in groove 2, and has part to expose groove 2 to 1 surface of substrate；The second magnetic conduction subelement 42
Major part be set in groove 2, between the second magnetic conduction subelement 42 and the first magnetic conduction subelement 41 be equipped with first medium material
Material.The magnetic signal is output to sensing unit and measured by the magnetic conduction unit to incude the magnetic signal of third direction.
The first medium material layer 61 being equipped between the second magnetic conduction subelement 42 and the first magnetic conduction subelement 41, first
Layer of dielectric material 61 is set on the first magnetic conduction subelement 41；The major part of first medium material layer 61 is located in groove 2.Institute
State the side wall that the second magnetic conduction subelement 42 is set to the first medium material layer 61,42 main part of the second magnetic conduction subelement with
The angle of base plane is 45 °~90 °, such as above-mentioned angle can be 45 °, 75 °, 85 °, 90 °.The magnetic conduction unit further includes
Second medium material layer 62 (second medium material is identical material or different materials with first medium material)；Described second is situated between
Second magnetic conduction subelement 42 is fixed between the first medium material layer 61 and second medium material layer 62 by the material bed of material 62.
Through the above way by the second magnetic conduction subelement 42 and the first magnetic conduction subelement 41 along groove 2 depth direction (i.e. perpendicular to base
The direction of baseplane) it is superposed, entire magnetic conduction element thickness can be improved, to improve the spirit of third direction magnetic sensing element
Sensitivity.
Sensing unit is set on 1 surface of the substrate, to measure the magnetic field of first direction or/and second direction, knot
The magnetic signal for closing the output of magnetic conduction unit can measure the third that first direction or/and second direction measurement are directed to by magnetic conduction unit
Direction magnetic field；First direction, second direction, third direction are mutually perpendicular to two-by-two.In the present embodiment, the first direction, second
Direction, third direction are respectively X-axis, Y-axis, Z axis.Dielectric material etc. can also be set between sensing unit and substrate (at this point, should
Dielectric material can also be as a part for substrate), the part that sensing unit exposes groove close to magnetic conduction unit is arranged, and induction is single
It is equipped with gap between member and the connection of magnetic conduction unit, or both.
The sensing unit includes magnetic material layer, electrode layer；In the present embodiment, sensing unit includes two magnetic materials
Layer, respectively the first magnetic material layer, the second magnetic material layer are denoted as the first inductor unit 31, the second inductor list respectively
Member 32.The electrode layer is set on magnetic material layer 32.First inductor unit 31, the second inductor unit 32 respectively close to
First magnetic conduction subelement 41, the setting of the second magnetic conduction subelement 42, can between each inductor unit and corresponding magnetic conduction subelement
To be equipped with gap (gap can not also be set).
It is possible thereby to extend, magnetic conduction unit may include at least two magnetic conduction subelements；Each magnetic conduction subelement is along groove
Depth direction is arranged in order, and dielectric material is equipped between adjacent two magnetic conduction subelements；The part of each magnetic conduction subelement is arranged
In in groove.The sensing unit includes several inductor units, and each inductor unit is single respectively close to corresponding magnetic conduction
Member setting.The magnetic signal of each magnetic conduction subelement induction third direction, and the magnetic signal is output to corresponding inductor unit
It measures；Each inductor unit measures the magnetic field of first direction or/and second direction, is exported in conjunction with corresponding magnetic conduction subelement
Magnetic signal can coordinate electrode layer to measure the third direction magnetic field for being directed to first direction or/and second direction by magnetic conduction subelement.
Preferably, the sensing unit includes electrode layer and an inductor unit, and inductor unit is close to the top
Magnetic conduction subelement is arranged.That is, in addition to one layer of inductor unit topmost, other inductor units corresponding with magnetic conduction subelement pass through
Dielectric layer is isolated, no power.In this way can in the case where increasing magnetic conduction element thickness (increase magnetic conduction element thickness can improve
Induction sensitivity), do not increase the thickness of sensing unit (induction sensitivity can be improved by not increasing sensing unit thickness).
In addition, the magnetic sensing device can also include first direction magnetic sensing element, second direction magnetic sensing element, point
Yong Lai not incude first direction, second direction magnetic field.
The present invention discloses a kind of preparation process of magnetic sensing device, and the preparation process includes preparing third direction magnetic sensing
The step of component (Z axis sensor), specifically comprise the following steps：
【Step S1】On the surface of substrate 1, groove 2 is set.It is of course also possible to the deposits dielectric materials in substrate, in medium
Groove is set on material, at this point it is possible to by substrate together with the dielectric material as new substrate.
【Step S2】Referring to Fig. 6, including 1 surface of substrate the first magnetic material of deposition of groove 2, the first magnetic is formed
Property material layer 101；First flux material layer is one layer or multilayer, material AMR or GMR or TMR material.
【Step S3】Please continue to refer to Fig. 6, the first insulating dielectric materials are deposited on the first magnetic material layer 101, are formed
First medium material layer 102；
【Step S4】As shown in fig. 6, depositing the second magnetic material in first medium material layer 102, it is magnetic to form second
Material layer 103；Second magnetic material is AMR or GMR or TMR materials.
【Step S5】Please continue to refer to Fig. 6, second medium material is deposited, second medium material layer 104 is formed, to protect
Positioned at the second magnetic material of 102 side wall of first medium material layer；
【Step S7】Referring to Fig. 7, deposition photoresist, exposes, development；
【Step S8】Etching forms sensor pattern, removes part magnetic material, removes photoresist；Shape is distinguished in substrate
At the magnetic material layer of sensing unit, magnetic conduction unit.Sensing unit is worked using the second magnetic material layer.
The part of magnetic conduction unit is set in groove, and has part to expose groove；Magnetic conduction unit includes at least two magnetic conductions
Subelement, which part or whole magnetic conduction subelements are superposed along the depth direction of groove, adjacent two magnetic conduction subelements
Between be equipped with dielectric material；The magnetic signal is output to induction by the magnetic conduction unit to incude the magnetic signal of third direction
Unit measures.
The magnetic material layer of sensing unit is formed in outside groove, and sensing unit is measuring first direction or/and second party
To magnetic field, in conjunction with magnetic conduction unit export magnetic signal, can measure and first direction or/and second direction are directed to by magnetic conduction unit
The third direction magnetic field of measurement；First direction, second direction, third direction are mutually perpendicular to two-by-two.
【Step S9】Deposit third dielectric material；
【Step S10】Contact window is formed by photoetching process and etching technics；
【Step S11】Referring to Fig. 8, deposited metal layer, and etch, form the electrode layer of sensing unit.
Certainly, the above method can also include step S6 between step S5 and step S7：Continue to deposit magnetic as needed
Property material, dielectric material；So that magnetic conduction unit forms three layers or more of magnetic material layer, and in the case, sensing unit profit
It is worked with last layer of magnetic material.The layer of dielectric material of insulation is formed between adjacent two layers magnetic material layer.
In addition, the preparation process of magnetic sensing device of the present invention further includes the steps that preparing X-axis, Y-axis Magnetic Sensor, method can
To use prior art, do not repeat here.
Embodiment two
The difference between this embodiment and the first embodiment lies in the present embodiment, the magnetic conduction unit includes that several magnetic conduction are single
First (such as 3 or more), the first magnetic conduction subelement, the second magnetic conduction subelement are as two of which magnetic conduction subelement.Each magnetic conduction
The main part of subelement is set in groove, and the main part of magnetic conduction subelement and the angle of base plane are 45 °~90 °；
It is separated by dielectric material between each magnetic conduction subelement.
The quantity of inductor unit is identical as the quantity of magnetic conduction subelement in the sensing unit.Each magnetic conduction subelement sense
The magnetic signal of third direction is answered, and the magnetic signal is output to corresponding inductor unit and is measured；Each inductor unit is surveyed
The magnetic field for measuring first direction or/and second direction can coordinate electrode layer to measure in conjunction with the magnetic signal that corresponding magnetic conduction subelement exports
The third direction magnetic field of first direction or/and second direction is directed to by magnetic conduction subelement.
But preferably, in above-mentioned each inductor unit, only one layer or a small number of layer play effect (such as facilitate can be in order to prepare
It is first layer).The sensing unit includes electrode layer and an inductor unit, magnetic conduction of the inductor unit close to the top
Unit is arranged.That is, in addition to one layer of inductor unit topmost, other inductor units corresponding with magnetic conduction subelement pass through dielectric layer
Isolation, no power.In this way can in the case where increasing magnetic conduction element thickness (increase magnetic conduction element thickness can improve induction spirit
Sensitivity), do not increase the thickness of sensing unit (induction sensitivity can be improved by not increasing sensing unit thickness).
In conclusion magnetic sensing device proposed by the present invention and its preparation process, by the magnetic for increasing Z axis (magnetic conduction unit)
The quantity of property material layer, to increase the sensing capability of Z axis.Therefore, the present invention can be improved magnetic sensing device sensing capability and
Sensitivity.
Description and application of the invention herein are illustrative, is not wishing to limit the scope of the invention to above-described embodiment
In.The deformation and change of embodiments disclosed herein are possible, real for those skilled in the art
The replacement and equivalent various parts for applying example are well known.It should be appreciated by the person skilled in the art that not departing from the present invention
Spirit or essential characteristics in the case of, the present invention can in other forms, structure, arrangement, ratio, and with other components,
Material and component are realized.Without departing from the scope and spirit of the present invention, can to embodiments disclosed herein into
The other deformations of row and change.
Claims (12)
1. a kind of magnetic sensing device, which is characterized in that the magnetic sensing device includes third direction magnetic sensing element, the third
Direction magnetic sensing element includes：
Substrate, surface are provided with groove；
Magnetic conduction unit, including at least two magnetic conduction subelements include at least the first magnetic conduction subelement, the second magnetic conduction subelement,
Each magnetic conduction subelement is arranged in order along the depth direction of groove, and dielectric material is equipped between adjacent two magnetic conduction subelements；Respectively
The part of magnetic conduction subelement is set in groove；The main part of the first magnetic conduction subelement is set in groove, and has portion
Divide and exposes groove to substrate surface；The major part of the second magnetic conduction subelement is set in groove, the second magnetic conduction subelement
It is set to the top of the first magnetic conduction subelement, first medium material is equipped between the second magnetic conduction subelement and the first magnetic conduction subelement
Material；The magnetic signal is output to sensing unit and measured by the magnetic conduction unit to incude the magnetic signal of third direction；
Sensing unit exposes the part setting of groove close to magnetic conduction unit, between being equipped between being connect with magnetic conduction unit or both
Gap, in conjunction with the magnetic signal that magnetic conduction unit exports, can be measured by magnetic conduction to measure the magnetic field of first direction or/and second direction
The third direction magnetic field that unit is directed to first direction or/and second direction measures；First direction, second direction, third direction
It is mutually perpendicular to two-by-two；The sensing unit includes that electrode layer and an inductor unit, inductor unit are led close to the top
Magneton unit is arranged；The magnetic signal of each magnetic conduction subelement induction third direction, and the magnetic signal is output to inductor unit
It measures；The inductor unit measures the magnetic field of first direction or/and second direction, is exported in conjunction with each magnetic conduction subelement
Magnetic signal can coordinate electrode layer to measure the third direction magnetic field for being directed to first direction or/and second direction by magnetic conduction subelement.
2. a kind of magnetic sensing device, which is characterized in that the magnetic sensing device includes third direction magnetic sensing element, the third
Direction magnetic sensing element includes：
Substrate, surface are provided with groove；
The depth direction of magnetic conduction unit, including at least two magnetic conduction subelements, which part or whole magnetic conduction subelements along groove
It is superposed；The part of magnetic conduction unit is set in groove, and has part exposing groove, between adjacent two magnetic conduction subelements
Equipped with dielectric material；The magnetic signal is output to sensing unit by the magnetic conduction unit to incude the magnetic signal of third direction
It measures；
Sensing unit exposes the part setting of groove close to magnetic conduction unit, to measure the magnetic of first direction or/and second direction
, in conjunction with magnetic conduction unit export magnetic signal, can measure by magnetic conduction unit be directed to first direction or/and second direction measurement
Third direction magnetic field；First direction, second direction, third direction are mutually perpendicular to two-by-two.
3. magnetic sensing device according to claim 2, it is characterised in that：
The sensing unit includes electrode layer and more than one inductor unit, and each inductor unit respectively close to leading accordingly
Magneton unit is arranged；
The magnetic signal of each magnetic conduction subelement induction third direction, and the magnetic signal is output to corresponding inductor unit and is carried out
It measures；Each inductor unit measures the magnetic field of first direction or/and second direction, the magnetic letter exported in conjunction with corresponding magnetic conduction subelement
Number, electrode layer can be coordinated to measure the third direction magnetic field for being directed to first direction or/and second direction by magnetic conduction subelement；
The main part of each magnetic conduction subelement is set in groove, and the main part of magnetic conduction subelement and the angle of base plane are
45 °~90 °；It is separated by dielectric material between each magnetic conduction subelement.
4. magnetic sensing device according to claim 2, it is characterised in that：
The magnetic conduction unit only includes two magnetic conduction subelements, i.e. the first magnetic conduction subelement, the second magnetic conduction subelement, the second magnetic conduction
Subelement is set to the top of the first magnetic conduction subelement；
The main part of the first magnetic conduction subelement is set in groove, and has part to expose groove to substrate surface；
The major part of the second magnetic conduction subelement is set in groove, the second magnetic conduction subelement and the first magnetic conduction subelement it
Between be equipped with first medium material, first medium material layer is set on the first magnetic conduction subelement；First medium material layer it is main
Part is located in groove.
5. magnetic sensing device according to claim 4, it is characterised in that：
The second magnetic conduction subelement is set to the side wall of the first medium material layer, the second magnetic conduction subelement main part with
The angle of substrate panel plane is 45 °~90 °；
The magnetic conduction unit further includes second medium material layer；Second magnetic conduction subelement is fixed on by the second medium material layer
Between the first medium material layer and second medium material layer.
6. magnetic sensing device according to claim 2, it is characterised in that：
The sensing unit includes electrode layer and an inductor unit, and magnetic conduction subelement of the inductor unit close to the top is set
It sets.
7. magnetic sensing device according to claim 2, it is characterised in that：
The magnetic sensing device further includes first direction magnetic sensing element, second direction magnetic sensing element, is respectively intended to induction
One direction, second direction magnetic field；The first direction, second direction, third direction are respectively X-axis, Y-axis, Z axis.
8. a kind of preparation process of magnetic sensing device, which is characterized in that the preparation process includes preparing third direction magnetic sensing
The step of component, specifically comprises the following steps：
Step S1, groove is set on the surface of substrate；
Step S2, the first magnetic material is being deposited comprising fluted substrate surface, is forming the first magnetic material layer；
Step S3, first medium material is deposited, first medium material layer is formed, first medium material is insulating materials；
Step S4, the second magnetic material is deposited, the second magnetic material layer is formed；Guarantor is provided with or without on second magnetic material layer
Sheath；
Step S5, second medium material is deposited, second medium material layer is formed, is located at first medium material layer side wall to protect
The second magnetic material；
Step S7, photoresist is deposited, is exposed, development；
Step S8, etching forms sensor pattern, removes part magnetic material, removes photoresist；Sense is respectively formed in substrate
Answer magnetic material layer, the magnetic conduction unit of unit；The part of magnetic conduction unit is set in groove, and has part to expose groove；Magnetic conduction
Unit includes at least two magnetic conduction subelements, and which part or whole magnetic conduction subelements are superposed along the depth direction of groove,
Dielectric material is equipped between two adjacent magnetic conduction subelements；The magnetic conduction unit to incude the magnetic signal of third direction, and
The magnetic signal is output to sensing unit to measure；Sensing unit positioned at the second magnetic material layer is formed in outside groove, sense
Unit is answered to measure the magnetic field of first direction or/and second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be led
The third direction magnetic field that magnetic cell is directed to first direction or/and second direction measures；First direction, second direction, third party
To being mutually perpendicular to two-by-two；
Step S9, third dielectric material is deposited；
Step S10, contact window is formed by photoetching process and etching technics；
Step S11, deposited metal layer, and etch, form the electrode layer of sensing unit.
9. preparation process according to claim 8, it is characterised in that：
The preparation process further includes step S12, forms subsequent insulating medium layer and metal layer and passivation layer.
10. preparation process according to claim 8, it is characterised in that：
Further include step S6 between the step S5 and step S7：Continue deposition of magnetic material, dielectric material；Make magnetic conduction unit
Form three layers or more of magnetic material layer.
11. preparation process according to claim 8, it is characterised in that：
The preparation process includes the steps that preparing X-axis, Y-axis magnetic sensing element.
12. a kind of preparation process of magnetic sensing device, which is characterized in that the preparation process includes preparing third direction magnetic sensing
The step of component, specifically comprises the following steps：
Groove is arranged on the surface of substrate in step 1；
Step 2 is depositing the first magnetic material comprising fluted substrate surface, forms the first magnetic material layer；Then deposit
Insulating dielectric materials layer；
One layer or more of magnetic material layer of step 3, depositing subsequent, deposition has insulating dielectric materials on every layer of magnetic material layer
Layer；
Step 4, deposition photoresist, expose, development；
Step 5, etching form sensor pattern, remove part magnetic material, remove photoresist；Induction is respectively formed in substrate
Magnetic material layer, the magnetic conduction unit of unit；The part of magnetic conduction unit is set in groove, and has part to expose groove；Magnetic conduction list
Member includes at least two magnetic conduction subelements, and which part or whole magnetic conduction subelements are superposed along the depth direction of groove, phase
Dielectric material is equipped between two adjacent magnetic conduction subelements；The magnetic conduction unit is incited somebody to action to incude the magnetic signal of third direction
The magnetic signal is output to sensing unit and measures；Sensing unit positioned at last layer of magnetic material layer is formed in outside groove,
Sensing unit, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure quilt to measure the magnetic field of first direction or/and second direction
The third direction magnetic field that magnetic conduction unit is directed to first direction or/and second direction measures；First direction, second direction, third
Direction is mutually perpendicular to two-by-two；
Step 6 deposits insulating dielectric materials layer again；
Step 7 forms contact window by photoetching process and etching technics；
Step 8, deposited metal layer, and etch, form the electrode layer of sensing unit.
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