CN104753625B - TD LTE downstream signal interference units - Google Patents

TD LTE downstream signal interference units Download PDF

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Publication number
CN104753625B
CN104753625B CN201510157604.1A CN201510157604A CN104753625B CN 104753625 B CN104753625 B CN 104753625B CN 201510157604 A CN201510157604 A CN 201510157604A CN 104753625 B CN104753625 B CN 104753625B
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signal
module
lte
dds
electric capacity
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CN104753625A (en
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吴麓峰
胡颂辉
于平
蒋俊荣
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Industrial Science And Technology Ltd Of Shenzhen Tang Cheng
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Industrial Science And Technology Ltd Of Shenzhen Tang Cheng
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Abstract

The present invention relates to TD LTE downstream signal interference units, including TD LTE baseband synchronizations device, DDS signal generator, switch control unit and TD LTE power amplifiers;TD LTE baseband synchronization devices, for receiving time slot signal and sending time slot signal to switch control unit, while receive the frequency point data from DDS signal generator and obtain signal so as to which carrier frequency point data are sent to DDS signal generator;DDS signal generator is used to obtain output signal according to the carrier frequency point data processing, and the output signal is sent to switch control unit;Switch control unit, which is used to be realized according to the low and high level of the time slot signal, to be opened and closed, so as to be transmitted when time slot signal is high level to output signal to TD LTE power amplifiers;TD LTE power amplifiers are used to be exported after the output signal power amplification from switch control unit.The present invention obtains carrier signal, automatic accurate shielding and system carrier identical channel, only disturbed descending normal without influenceing base station communication according to current network information.

Description

TD-LTE downstream signal interference units
Technical field
The present invention relates to shielding device technical field, more particularly to TD-LTE downstream signal interference units.
Background technology
In the market TD-LTE signal interferences device be all VCO (voltage controlled oscillator) technology scanning broadband without synchronous interference, Its shortcoming is that VCO scanning technique frequency shift (FS)s are difficult to control, and sacrifices power assurance to ensure that shield effectiveness typically increases bandwidth Covering, does not identify TD-LTE network carrier channels and synchronizing signal function, although can so shield mobile phone signal, simultaneously Influence whether that base station is up, the non-precisely transmitting in broadband is ineffective under same radio frequency power, while it is clever to influence the base station collection of letters Sensitivity reduces, signal to noise ratio index declines, and directly affects mobile communication base station covering radius, damage is brought to operator and cellphone subscriber Lose.
The content of the invention
For problem of the prior art, it is an object of the invention to provide a kind of TD-LTE downstream signals interference unit, its energy Accurate interfering down path carrier channel simultaneously has Synchronization Control interference, and not up to base station produce is disturbed.
To achieve the above object, the present invention adopts the following technical scheme that:
TD-LTE downstream signal interference units, including TD-LTE baseband synchronizations device, DDS signal generator, switch control list Member and TD-LTE power amplifiers;The TD-LTE baseband synchronizations device, for receiving time slot signal and carrier signal, and by when Gap signal is sent to switch control unit, and carrier signal is sent to DDS signal generator, while is received and sent out from DDS signals The frequency point data of raw device obtains signal so as to send carrier frequency point data to DDS signal generator according to data acquisition signal; The DDS signal generator, for obtaining the output signal of corresponding frequency according to the carrier frequency point data processing, and this is exported Signal is sent to switch control unit;The switch control unit, it is opened and closed for being realized according to the low and high level of the time slot signal, So as to output signal is transmitted to TD-LTE power amplifiers when time slot signal is high level, when time slot signal is low electricity Usually output signal is intercepted;The TD-LTE power amplifiers, for by the output signal from switch control unit Exported after carrying out power amplification by antenna.
Further, the TD-LTE baseband synchronizations device includes interface module, level switch module, transceiver module and company Connect device module;The interface module, level switch module and transceiver module are sequentially connected, the DDS signal generator and transmitting-receiving Module is connected, and the switch control unit and level switch module are connected with connector modules.
Further, the interface module uses model MINIPCIE 52PIN interface chip;The level turns Change the mold the electrical level transferring chip that block uses model ADG3308;The transceiver module uses model SP3232ECA-L transmitting-receiving Chip;The connector modules use model 2.0BOX90 connector.
Further, the DDS signal generator include be sequentially connected MCU, DDS circuit module, frequency converter, low pass filtered Ripple module, frequency mixing module, High frequency filter module and amplification module;The MCU is also connected with TD-LTE baseband synchronization devices;It is described Amplification module is also connected with switch control unit.
Further, the model STM32F100RC of the MCU;The DDS circuit is using model AD9910's DDS chips;The model ADT1-1WT of the frequency converter;The amplification module uses model AG50 amplification chip.
Further, the low-pass filtering module includes inductance L1, inductance L2, inductance L3, electric capacity C1, electric capacity C2, electricity Hold C3 and electric capacity C4;One end of the inductance L1 and electric capacity C1 one end are connected with frequency converter;The other end of the inductance L1 It is connected with the one end of electric capacity C2 one end with inductance L2;The other end of the inductance L2 and electric capacity C3 one end with inductance L3 One end connection;The other end of the inductance L3 and electric capacity C4 one end are connected with frequency mixing module;The electric capacity C1's is another End, the electric capacity C2 other end, the electric capacity C3 other end, the electric capacity C4 other end are grounded.
Further, the TD-LTE power amplifiers include being sequentially connected attenuation module, the first amplifier, second put Big device, final amplifier and isolator;The attenuation module is also connected with switch control unit.
Further, the attenuation module uses model HSMP-3866 attenuator;The type of first amplifier Number it is AG50;The model MW7IC2725NBR1 of second amplifier;The model BLF7G27L- of the final amplifier 140;The model ISOLATER of the isolator.
Compared with prior art, the beneficial effects of the present invention are:
According to current network information, carrier signal, automatic accurate shielding and system carrier identical channel are obtained, is only disturbed It is descending normal without influenceing base station communication, lift interference distance.
Brief description of the drawings
Fig. 1 is the framework composition figure of the present invention;
Fig. 2 is the frame diagram of the TD-LTE baseband synchronization devices of the present invention;
Fig. 3 is the frame diagram of the DDS signal generator of the present invention;
Fig. 4 is the frame diagram of the TD-LTE power amplifiers of the present invention.
Wherein, 1, TD-LTE baseband synchronization devices;11st, interface module;12nd, level switch module;13rd, transceiver module;14、 Connector;2nd, DDS signal generator;21、MCU;22nd, DDS circuit module;23rd, frequency converter;24th, low-pass filtering module;25th, mix Frequency module;26th, High frequency filter module;27th, amplification module;3rd, switch control unit;31st, attenuation module;32nd, the first amplifier; 33rd, the second amplifier;34th, final amplifier;35th, isolator;4th, TD-LTE power amplifiers.
Embodiment
Below, it is new to the present invention to be described further with reference to accompanying drawing and embodiment:
Referring to Fig. 1 to Fig. 4, TD-LTE downstream signals interference unit provided by the invention mainly includes TD-LTE baseband synchronizations and filled Put 1, DDS signal generator 2, switch control unit 3 and TD-LTE power amplifiers 4;TD-TLE be based on OFDMA technologies, by The universal standard that 3GPP is organized to set up, including FDD and TDD both of which are used for paired spectrum and non-paired frequency spectrum, TD- LTE is Time Division Long Term Evolution (timesharing Long Term Evolution), is OFDM.DDS signals are sent out Raw device 2 uses direct digital synthesis technique (Direct Digital Synthesis, abbreviation DDS) technology, signal generator Frequency stability, the degree of accuracy provide and arrive horizontal with reference frequency identical, and can be carried out in frequency range quickly Fine frequency regulation, this signal source are operable with adjustment state, output level can be adjusted, also exportable various ripples Shape.
The TD-LTE baseband synchronizations device 1 of the present embodiment, for receiving time slot signal and carrier signal, and by time slot signal Send to switch control unit 3, carrier signal is sent to DDS signal generator 2, when TD-LTE baseband synchronizations device 1 obtains The technology of gap signal and carrier signal would know that by prior art, while receive the frequency point data letter from DDS signal generator 2 Number so that carrier frequency point data are sent to DDS signal generator 2 according to data acquisition signal;DDS signal generator 2, is used for The up output signal of corresponding frequency is obtained according to the carrier frequency point data processing, the output signal shields upward signal, And the output signal is sent to switch control unit 3;Switch control unit 3, realized according to the low and high level of the time slot signal Opening and closing, so as to be transmitted output signal to TD-LTE power amplifiers 4 when time slot signal is high level, works as time slot signal To be intercepted during low level to output signal;TD-LTE power amplifiers 4, for by the output from switch control unit 3 Signal power is exported after being amplified by antenna.The frequency point data of the present embodiment is carrier parameter, including physical area Address, descending frequency, up frequency, TD-LTE baseband synchronizations device 1 are received after data acquisition signal to DDS signal generator 2 send response, represent to send and order successfully, and frequency point data signal is sent to DDS signal generator 2.
TD-LTE baseband synchronizations device 1 is automatically performed cell searching and the wireless signaling processing of TD-TLE wireless networks, obtains To accurate TDD (Time Division Duplexing, i.e. time division duplex) uplink and downlink timeslot signal, uplink and downlink timeslot ratio etc. Information, by interface by uplink and downlink timeslot signal and carrier channel signal output.Time slot signal, can be with the case of high level Switch control unit 3 is turned on, when time slot signal is low level, switch control unit 3 is closed.Specifically, TD-LTE base band is same Step device 1 includes interface module 11, level switch module 12, transceiver module 13 and the module of connector 14;Interface module 11, level Modular converter 12, transceiver module 13 are sequentially connected, and DDS signal generator 2 is connected with transceiver module, switch control unit 3 It is connected with level switch module 12 with the module of connector 14.TD-LTE baseband synchronizations device 1 is believed by antenna pickup to time slot Number, down-going synchronous indication signal is exported by interface module 11, being sent to the progress of level switch module 12 level conversion afterwards is 3.3V level, then sent by connector 14 to switch control unit 3;TD-LTE baseband synchronizations device 1 passes through transceiver module 13, which receive the frequency point data from DDS signal generator 2, obtains signal, afterwards and passes sequentially through level switch module 12, receives and dispatches Module 13 sends the carrier frequency point data Jing Guo level conversion to DDS signal generator 2.The present embodiment is preferable, interface Module 11 uses model MINIPCIE 52PIN interface chip;Level switch module 12 uses model ADG3308 electricity Flat conversion chip;Transceiver module 13 uses model SP3232ECA-L transceiving chip;The module of connector 14 uses model 2.0BOX90 connector 14.
DDS signal generator 2 includes MCU 21, DDS circuit module 22, frequency converter 23, the LPF mould being sequentially connected Block 24, frequency mixing module 25, High frequency filter module 26 and amplification module 27;MCU 21 is also connected with TD-LTE baseband synchronizations device 1; Amplification module 27 is also connected with switch control unit 3.MCU 21 drives DDS circuit module 22 to work, and is responsible for initialization DDS electricity Road, control sends frequency point data and obtains signal to TD-LTE baseband synchronizations device 1, and receives and come from TD-LTE baseband synchronization devices 1 carrier signal and carrier frequency point data, so as to obtain the carrier channel signal of corresponding frequency, the carrier channel of the corresponding frequency Signal is changed into voltage output signal by frequency converter 23, due to its be low frequency signal, it is necessary to by frequency mixing module 25 mixing after The high-frequency signal that can be needed, High frequency filter is carried out by High frequency filter module 26 afterwards, frequency-doubled signal is obtained, finally passes through Amplification module 27 carries out signal and amplifies to obtain final output signal, then exports to switch control unit 3.
The present embodiment is preferable, MCU 21 model STM32F100RC;DDS circuit uses model AD9910 DDS Chip;The model ADT1-1WT of frequency converter 23;Amplification module 27 uses model AG50 amplification chip.
In addition, low-pass filtering module 24 in DDS signal generator 2 include inductance L1, inductance L2, inductance L3, electric capacity C1, Electric capacity C2, electric capacity C3 and electric capacity C4;Inductance L1 one end and electric capacity C1 one end are connected with frequency converter 23;Inductance L1's is another The one end of end and electric capacity C2 one end with inductance L2 is connected;The inductance L2 other end and electric capacity C3 one end are with inductance L3's One end connects;The inductance L3 other end and electric capacity C4 one end are connected with frequency mixing module 25;The electric capacity C1 other end, electric capacity C2 The other end, electric capacity the C3 other end, the electric capacity C4 other end be grounded.
TD-LTE power amplifiers 4 include two-stage driving amplifier and final amplifier 34, specifically, including being sequentially connected Attenuation module 31, the first amplifier 32, the second amplifier 33, final amplifier 34 and isolator 35;Attenuation module 31 also with Switch control unit 3 connects.Above-mentioned the first amplifier 32 and the second amplifier 33 is driving amplifier.From DDS signals The carrier channel signal of generator 2 reaches after TD-LTE power amplifiers 4 carry out a series of power amplification to meet the requirements Power, then exported after isolation.Attenuation module 31 uses model HSMP-3866 attenuator;First amplifier 32 model AG50;The model MW7IC2725NBR1 of second amplifier 33;The model of the final amplifier 34 BLF7G27L-140;The model ISOLATER of isolator 35.
The TD-LTE baseband synchronizations device 1 of the present invention obtains time slot signal and carrier channel letter using band processing techniques Number, synchronization accuracy is higher, and offer technical conditions are precisely shielded to system time gap arrowband, and DL synchronization shielding is up without influenceing, Not interference base station, interference source use DDS technologies, and frequency is accurate, obtains carrier mask automatically.
It will be apparent to those skilled in the art that technical scheme that can be as described above and design, make other various Corresponding change and deformation, and all these changes and deformation should all belong to the protection of the new claim of the present invention Within the scope of.

Claims (8)

1.TD-LTE downstream signal interference units, it is characterised in that including TD-LTE baseband synchronizations device, DDS signal generator, open Close control unit and TD-LTE power amplifiers;The TD-LTE baseband synchronizations device, for receiving time slot signal and carrier wave letter Number, and time slot signal is sent to switch control unit, carrier signal is sent to DDS signal generator, while receive and come from The frequency point data of DDS signal generator obtains signal and believed so as to be sent carrier frequency point data to DDS according to data acquisition signal Number generator;The DDS signal generator, for obtaining the output signal of corresponding frequency according to the carrier frequency point data processing, And the output signal is sent to switch control unit;The switch control unit, for the height electricity according to the time slot signal Plain existing opening and closing, so as to be transmitted when time slot signal is high level to output signal to TD-LTE power amplifiers, at that time Gap signal intercepts when being low level to output signal;The TD-LTE power amplifiers, it is single for switch control will to be come from The output signal of member is exported after carrying out power amplification by antenna.
2. TD-LTE downstream signals interference unit as claimed in claim 1, it is characterised in that the TD-LTE baseband synchronizations device Including interface module, level switch module, transceiver module and connector modules;The interface module, level switch module and receipts Hair module is sequentially connected, and the DDS signal generator is connected with transceiver module, the switch control unit and level switch module It is connected with connector modules.
3. TD-LTE downstream signals interference unit as claimed in claim 2, it is characterised in that the interface module uses model MINIPCIE 52PIN interface chip;The level switch module uses model ADG3308 electrical level transferring chip;It is described Transceiver module uses model SP3232ECA-L transceiving chip;The connector modules use model 2.0BOX90 company Connect device.
4. TD-LTE downstream signals interference unit as claimed in claim 1, it is characterised in that the DDS signal generator includes MCU, DDS circuit module, frequency converter, low-pass filtering module, frequency mixing module, High frequency filter module and the amplification mould being sequentially connected Block;The MCU is also connected with TD-LTE baseband synchronization devices;The amplification module is also connected with switch control unit.
5. TD-LTE downstream signals interference unit as claimed in claim 4, it is characterised in that the model of the MCU STM32F100RC;The DDS circuit uses model AD9910 DDS chips;The model ADT1-1WT of the frequency converter; The amplification module uses model AG50 amplification chip.
6. TD-LTE downstream signals interference unit as claimed in claim 4, it is characterised in that the low-pass filtering module includes electricity Feel L1, inductance L2, inductance L3, electric capacity C1, electric capacity C2, electric capacity C3 and electric capacity C4;One end of the inductance L1 and the one of electric capacity C1 End is connected with frequency converter;The one end of the other end of the inductance L1 and electric capacity C2 one end with inductance L2 is connected;The electricity The one end of the sense L2 other end and electric capacity C3 one end with inductance L3 is connected;The other end of the inductance L3 and the one of electric capacity C4 End is connected with frequency mixing module;The other end of the electric capacity C1, the electric capacity C2 other end, the electric capacity C3 other end, electric capacity C4 The other end is grounded.
7. TD-LTE downstream signals interference unit as claimed in claim 1, it is characterised in that the TD-LTE power amplifiers bag Include the attenuation module being sequentially connected, the first amplifier, the second amplifier, final amplifier and isolator;The attenuation module is also It is connected with switch control unit.
8. TD-LTE downstream signals interference unit as claimed in claim 7, it is characterised in that the attenuation module uses model HSMP-3866 attenuator;The model AG50 of first amplifier;The model of second amplifier MW7IC2725NBR1;The model BLF7G27L-140 of the final amplifier;The model ISOLATER of the isolator.
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CN107026725A (en) * 2017-06-21 2017-08-08 王静 TDD wireless signal networking sychronisations and system for shielding device
CN107171766A (en) * 2017-07-21 2017-09-15 中国电子科技集团公司第二十九研究所 A kind of LTE signal shielding methods and system based on system information
GB2585886B (en) * 2019-07-19 2023-10-18 Kirintec Ltd A signal generator
CN111711477B (en) * 2020-04-26 2022-05-10 四川润泽经伟信息技术有限公司 Carrier interference system, method and device based on satellite communication countermeasure system

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Address after: 518000 201, building 2, East, No. 240, Jinbi Road, Shahu community, biling street, Pingshan District, Shenzhen City, Guangdong Province

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