CN104752954B - Semiconductor laser made using zinc oxide quantum well mixing and preparation method thereof - Google Patents
Semiconductor laser made using zinc oxide quantum well mixing and preparation method thereof Download PDFInfo
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Abstract
The invention discloses the semiconductor laser made using zinc oxide quantum well mixing, including epitaxial wafer, bar shaped light-emitting zone is provided with epitaxial wafer, the upper surface growth of epitaxial wafer has zinc oxide film layer, zinc oxide films film layer is divided into two parts, wherein the sub- trap of Part I zinc oxide films film layer inducing amount forms non-absorbing window after mixing at the light extraction Cavity surface at laser both ends, the depth of non-absorbing window exceedes the active area in epitaxial wafer, the sub- trap of Part II zinc oxide films film layer inducing amount forms index optical waveguide region after mixing at the both ends of laser bar shaped light-emitting zone.The invention also discloses the preparation method of this kind of semiconductor laser.The present invention solves in the prior art the problem of using that after quantum well mixing fabrication techniques non-absorbing window, can not avoid leakage current outside luminous zone side optical confinement and luminous zone.
Description
Technical field
The invention belongs to semiconductor laser apparatus technical field, and in particular to one kind utilizes zinc oxide quantum well mixing system
The semiconductor laser of work, the invention further relates to the preparation method of this kind of laser.
Background technology
Semiconductor laser is so that its wavelength range of choice is wide, small volume, small power consumption, efficiency high, inheritance are good, cost is low etc.
Advantage turns into one of most important semiconductor photoelectronic device.Wherein high power semiconductor lasers show in laser storage, laser
Show, laser printing, material processing, laser marking, biomedicine, medicine equipment, the field extensive application such as space optical communication,
Simultaneously laser target shooting, laser guidance, laser night vision, laser radar, laser fuze, laser force are can also be applied in military field
Device, war simulation etc..High power semiconductor lasers technology covers nearly all optoelectronic areas, and it is high-power to develop high-performance
Laser is needed from the design of laser epitaxial chip architecture, Material growth, element manufacturing, Cavity surface optical coating, device encapsulation, light beam
Shaping with couple etc. it is many-sided coordinate to start with, but undoubtedly the making of semiconductor laser device epitaxial wafer and chip is most crucial skill
Art.
For practical high power semiconductor lasers, not only to ensure that threshold current is low, power output is high, device
Long lifespan, also require that semiconductor laser has preferable optical quality and light field pattern.But swashing with high power work
The Cavity surface catastrophic optical damage damage that occurs in light device power-current characteristic and voltage-current characteristic, kink of a curve, hot saturation, thermal shock
Wear, work in slow aging phenomena such as, the optical output power of laser, life and reliability are frequently subjected to limit.Wherein, light
Learn extensive concern of one of the main reason of catastrophe damage as limitation high power semiconductor lasers development by industry.
Catastrophic optical damage damage refers to when the optical power density of semiconductor laser exceedes some critical value so that device
Light output end face local temperature has reached the fusing point of semi-conducting material, so as to cause the Cavity surface of laser to be melted and quickly tie again
Crystalline substance, this influence to laser operating efficiency is moment, serious, completely destructive.Catastrophic optical damage damage belongs to can not
Restorative damage, once there is catastrophic optical damage damage, whole device all will be entirely ineffective, thus it is that limitation high-power half is led
The principal element of body laser power output and reliability.
For high power semiconductor lasers, mainly there is lower several method directly or indirectly to suppress catastrophic optical damage damage
Generation.First, Cavity surface nearby to reduce the carrier of Cavity surface vicinity inject by current blocking technology；Second, it is blunt by Cavity surface
Change technology, vacuum cleavage plated film etc. reduce the morphogenetic non-radiative recombination center density of surface state or interface at Cavity surface；3rd,
Pass through wide waveguide, Large optical cavity structure so that lighting area and hot spot increase, reduce the optical density at Cavity surface；4th, using
Strained quantum well structure, twin shaft internal stress Spontaneous release at Cavity surface, causes band gap broadening, reduces the light absorbs of Cavity surface；5th,
Using non-absorbing window technology so that the band gap of active layer is more than the energy of lasing photon at Cavity surface, to reduce the light at Cavity surface
Absorb, reach the purpose for improving catastrophic optical damage damage power.The making of non-absorbing window can use multiple epitaxy technology and quantum
Trap immingling technology.Multiple epitaxy technology is the new material that a kind of band gap of regrowth is bigger than Cavity surface material at Cavity surface, but due to material
Expect that growth technique is complicated, and the interfacial state control difficulty formed at new material and Cavity surface is very big, the program has not obtained persuasion
The practical function of power, thus using quantum well mixing technology come to make non-absorbing window be more preferably to select.
Although can be successfully in strip structure high-power semiconductor laser using various types of quantum well mixing technologies
Non-absorbing window is produced at the Cavity surface of device, power output is also can effectively improve after parameter optimization, but the technique newly added
Only non-absorbing window service, single effect, effective limitation can not be formed to light in luminous zone side.It is simultaneously non-in order to reduce
Electric current injection outside luminous zone, it usually needs silica dioxide medium film is remake, if the parameter such as deielectric-coating consistency is bad,
Laser will have certain leakage current, influence its operating efficiency.Proposed by the invention utilizes zinc oxide quantum well mixing
The strip structure high power semiconductor lasers of making, it is provided simultaneously with non-absorbing window and electric current injection Resistance.Non-absorbing window
The light absorbs at the nearly Cavity surface of laser are reduced at mouthful, the catastrophic optical damage damage threshold of laser is effectively improved, makes output work
Rate is significantly increased；Bar shaped light-emitting zone lateral side regions can reduce its refractive index caused by quantum well mixing with broadening,
The low energy gap refractive index waveguide limitation to laser resonator intracavitary is just formed, greatly increases out optical property；N-type aoxidizes
The PN of zinc film and laser forms NPN structures, greatly reduces current leakage, increases photoelectric transformation efficiency.
The content of the invention
It is an object of the invention to provide a kind of semiconductor laser made using zinc oxide quantum well mixing, solve existing
After using quantum well mixing fabrication techniques non-absorbing window in technology, it can not avoid outside luminous zone side optical confinement and luminous zone
The problem of leakage current.
It is a further object of the present invention to provide the preparation method of above-mentioned laser.
The technical solution adopted in the present invention is：
A kind of semiconductor laser made using zinc oxide quantum well mixing, including epitaxial wafer, it is provided with epitaxial wafer
Bar shaped light-emitting zone, the upper surface growth of epitaxial wafer have zinc oxide film layer, and zinc oxide films film layer is divided into two parts, wherein first
Non-absorbing window is formed at the light extraction Cavity surface at laser both ends after partial oxidation zinc film layer induction quantum well mixing, it is non-absorbing
The depth of window exceed epitaxial wafer in active area, the sub- trap of Part II zinc oxide films film layer inducing amount mix after in laser stripes
The both ends of shape light-emitting zone form index optical waveguide region.
The features of the present invention also resides in：
The concrete structure of epitaxial wafer set gradually from top to bottom for：Substrate, cushion, lower limit layer, lower waveguide layer, quantum
Trap and quantum build district's groups into active area, upper ducting layer, upper limiting layer and upper ohmic contact layer, bar shaped light-emitting zone is arranged on
At the longitudinal centre line of ohmic contact layer.
Zinc oxide films film layer is grown in the bar shaped light-emitting zone surrounding after eroding ohmic contact layer, zinc oxide films film layer
Thickness it is equal with the thickness of upper ohmic contact layer, Part I zinc oxide films film layer is zinc oxide films film layer a, Part II oxygen
It is zinc oxide films film layer b to change zinc film layer, and zinc oxide films film layer a abuts bar shaped light-emitting zone and indulged positioned at bar shaped light-emitting zone
To both ends at, zinc oxide films film layer b adjoining bar shaped light-emitting zones and at the horizontal both ends of bar shaped light-emitting zone.
The central area of non-absorbing window overlaps with the central area of bar shaped light-emitting zone, and the width of non-absorbing window is more than
Or the width equal to bar shaped light-emitting zone, the depth of non-absorbing window for sequentially pass through the upper ducting layer in part, whole SQW and
Quantum build district's groups into active area and part lower waveguide layer.
The bottom surface of substrate, which makes, N faces electrode, on bar shaped light-emitting zone, zinc oxide films film layer a and zinc oxide films film layer b
Making simultaneously has p side electrode, zinc oxide films film layer a and zinc oxide films film layer b n-type doping and upper limiting layer and substrate, delays
Rush layer, lower limit layer forms the NPN structures for stopping that electric current passes through.
The present invention another technical scheme be,
The preparation method of the semiconductor laser made using zinc oxide quantum well mixing, it is specifically real according to following steps
Apply：
Step 1, selected substrate；
Step 2, using Metalorganic Chemical Vapor Deposition on substrate grown buffer layer, lower limit layer, lower ripple successively
Conducting shell, SQW and quantum build area, upper ducting layer, upper limiting layer and upper ohmic contact layer, that is, form the epitaxial wafer of laser；
Step 3, the laser epitaxial piece superficial growth zinc oxide films film layer a formed in step 2 using sputtering method and
Zinc oxide films film layer b；
Step 4, make non-absorbing window and index optical waveguide region；
Step 5, p side electrode made using sputtering technology, after then carrying out attenuated polishing to substrate, then using evaporation technology
N faces electrode is made in the bottom surface of substrate, laser bar bar cleavage is then carried out again, finally laser is entered using evaporation technology again
Row cavity surface film coating, that is, complete the making of the semiconductor laser.
The characteristics of another technical scheme of the invention, also resides in,
Step 3 is specifically implemented according to following steps：
Step 3.1, laser epitaxial piece upper ohmic contact layer upper surface grow one layer of fine and close silica dioxide medium
Film；
Step 3.2, bar shaped light-emitting zone formed at the longitudinal centre line of upper ohmic contact layer using photoetching technique, then
With the silica dioxide medium film outside hydrofluoric acid solution corrosion bar shaped light-emitting zone；
Step 3.3, the upper ohmic contact layer for eroding using the method for wet etching bar shaped light-emitting zone surrounding, and control
Good corrosion depth ensures the thickness that it is upper ohmic contact layer；
Step 3.4, the laser epitaxial piece by above step processing is put into sputtering chamber, in argon gas and oxygen
Sputtering zinc oxide target under mixed atmosphere, in epitaxial wafer superficial growth zinc-oxide film, and control zinc oxide films film layer a and oxidation
Zinc film layer b thickness is equal to 200 nanometers of the thickness of upper ohmic contact layer；
Step 3.5, using photoresist protective layer is done, the oxygen that bar shaped light-emitting zone grows above is eroded using hydrochloric acid solution
Change zinc film, and retain zinc oxide films film layer a and zinc oxide films film layer b.
Step 4 is specifically implemented according to following steps：
Step 4.1, with hydrofluoric acid solution erode remaining silica dioxide medium film and cleaned extension on epitaxial wafer
Piece；
Step 4.2, the epitaxial wafer cleaned by step 4.1 is put into quick anneal oven be heat-treated, in heat
In processing procedure, after zinc oxide films film layer a induction quantum well mixings, after sequentially passing through ohmic contact layer, upper limiting layer, swashing
Non-absorbing window is formed at the light extraction Cavity surface at light device both ends；In laser after simultaneous oxidation zinc film layer b induction quantum well mixings
The both ends of bar shaped light-emitting zone form index optical waveguide region.
The temperature being heat-treated in step 4.2 is 600-850 degree, and the time is the 30-200 seconds.
P side electrode in step 5 makes simultaneously on bar shaped light-emitting zone, zinc oxide films film layer a and zinc oxide films film layer b
Form.
The invention has the advantages that
1) being distributed in the zinc-oxide film at laser cavity surface both ends can be formed the active area under it after quantum well mixing
The non-absorbing window of light, because the energy gap in non-absorbing window region broadens so that defeated inside the region relative laser device
Light extraction hardly picks up, and this will greatly increase the catastrophic optical damage damage threshold of laser, effectively improve the defeated of semiconductor laser
Go out power.
2) zinc-oxide film of laser diode bar shape light-emitting zone both sides growth is after quantum well mixing is carried out, under it
Active area band gap enters line broadening, and this causes the refractive index of light-emitting zone side to diminish, and can form the more preferable refractive index of guided wave effect
Waveguide, Optical confinement factor is improved, improve light field pattern, increase luminous efficiency.
3) because more Lacking oxygen be present in Zinc oxide film material so that N-type conduction type is presented in it, in semiconductor
The zinc-oxide film of laser luminous zone surrounding growth will form NPN knots with the P-type layer in laser epitaxial structure and N-type layer
Structure, in the additional forward voltage of device, electric current is mainly from the PN junction of luminous zone by the way that this greatly reduces leakage current, improves
The photoelectric transformation efficiency of device.
4) traditional stripe-geometry semiconductor laser is more thin as electrical pumping barrier layer, such medium using silica membrane
Film has the shortcomings that poor thermal conductivity, compactness is bad, thus can influence its heat dissipation channel often in the encapsulation of device flip chip bonding, uses
Its of a relatively high thermal conductivity can improve the temperature characterisitic of device behind zinc-oxide film replacement of silicon dioxide electrical pumping barrier layer, its
The leakage current of device when the high-compactness of material can also reduce hot operation.
5) zinc-oxide film can use the growth of the kinds of processes such as extension, sputtering, evaporation, and quantum well mixing is mainly by quick
Thermal annealing is realized, thus the strip structure high-power semiconductor laser made using zinc oxide quantum well mixing of the present invention
Device, manufacture craft is simple and easy, and existing process compatibility is good, and the Cavity surface plating of laser is nor affected on after making non-absorbing window
It membrane process, will not additionally increase cost, there is large-scale production feature.
Brief description of the drawings
Fig. 1 is that the 808nm strip structure high-power halfs made in the embodiment of the present invention 1 using zinc oxide quantum well mixing are led
The structural representation of body laser.
In figure, 1. substrates, 2. cushions, 3. lower limit layers, 4. lower waveguide layers, 5. SQWs and quantum build area, 6. upper ripples
Conducting shell, 7. upper limiting layers, ohmic contact layer on 8., 9. bar shaped light-emitting zones, 10. non-absorbing windows, 11. zinc-oxide film a,
12. zinc-oxide film b.
Embodiment
The present invention is described in further detail with embodiment below in conjunction with the accompanying drawings：
Embodiment 1 is the 808nm strip structure high power semiconductor lasers made using zinc oxide quantum well mixing, its
Structure as shown in figure 1, including epitaxial wafer, the concrete structure of epitaxial wafer set gradually from top to bottom for：Substrate 1, cushion 2, under
Limiting layer 3, lower waveguide layer 4, SQW and quantum build area 5, upper ducting layer 6, upper limiting layer 7 and upper ohmic contact layer 8.Upper ohm
Bar shaped light-emitting zone 9 is provided with the longitudinal centre line of contact layer 8, the surrounding of bar shaped light-emitting zone 9 is to erode Ohmic contact
The zinc oxide films film layer grown after layer 8, the thickness of zinc oxide films film layer is equal with the thickness of upper ohmic contact layer 8, zinc oxide films
Film layer is divided into zinc oxide films film layer a11 and zinc oxide films film layer b12, zinc oxide films film layer a11 adjoining bar shapeds light-emitting zone 9 and
At the both ends of the longitudinal direction of bar shaped light-emitting zone 9, zinc oxide films film layer b12 abuts bar shaped light-emitting zone 9 and sent out positioned at bar shaped
At the horizontal both ends in light region 9.Zinc oxide films film layer a11 induction quantum well mixing after, sequentially pass through ohmic contact layer 8, on
After limiting layer 7, non-absorbing window 10, the central area of non-absorbing window 10 and bar are formed at the light extraction Cavity surface at laser both ends
The central area of shape light-emitting zone 9 overlaps, and the width of non-absorbing window 10 is more than or equal to the width of bar shaped light-emitting zone 9, non-
The depth of absorbing window 10 builds area 5 and part lower waveguide layer to sequentially pass through part upper ducting layer 6, whole SQW and quantum
4.Refractive index light wave is formed at the both ends of laser bar shaped light-emitting zone 9 after zinc oxide films film layer b12 induction quantum well mixings
Region is led, being made in the bottom surface of substrate 1 has N faces electrode, in bar shaped light-emitting zone 9, zinc oxide films film layer a11 and zinc-oxide film
The n-type doping and upper limiting layer 7 for having p side electrode, zinc oxide films film layer a11 and zinc oxide films film layer b12 are made simultaneously on layer b12
And substrate 1, cushion 2, lower limit layer 3 form the NPN structures for stopping that electric current passes through.
The preparation method of the above-mentioned semiconductor laser made using zinc oxide quantum well mixing is specifically according to following steps
Implement：
Step 1, N-type GaAs is chosen as substrate 1；
Step 2, using Metalorganic Chemical Vapor Deposition on substrate 1 successively grown buffer layer 2, lower limit layer 3, under
Ducting layer 4, SQW and quantum build area 5, upper ducting layer 6, upper limiting layer 7 and upper ohmic contact layer 8, that is, form the outer of laser
Prolong chip architecture；
Step 3, utilize sputtering method growing zinc oxide film layer a11 and zinc oxide films film layer b12；
The step is specifically implemented according to following steps：
Step 3.1, laser epitaxial piece the upper surface of upper ohmic contact layer 8 grow one layer of fine and close silica dioxide medium
Film；
Step 3.2, bar shaped light-emitting zone 9 formed at the longitudinal centre line of upper ohmic contact layer 8 using photoetching technique, so
Corrode the silica dioxide medium film outside bar shaped light-emitting zone 9 with hydrofluoric acid solution afterwards；
Step 3.3, the upper ohmic contact layer 8 for eroding using the method for wet etching the surrounding of bar shaped light-emitting zone 9, and control
Make the thickness that corrosion depth ensures that it is upper ohmic contact layer 8；
Step 3.4, the laser epitaxial piece by above step processing is put into sputtering chamber, in argon gas and oxygen
Sputtering zinc oxide target under mixed atmosphere, in epitaxial wafer superficial growth zinc-oxide film, and control zinc oxide films film layer a11 and oxygen
The thickness for changing zinc film layer b12 is equal to 200 nanometers of the thickness of upper ohmic contact layer 8；
Step 3.5, using photoresist protective layer is done, erode what bar shaped light-emitting zone 9 grew above using hydrochloric acid solution
Zinc-oxide film, and retain zinc oxide films film layer a11 and zinc oxide films film layer b12；
Step 4, make non-absorbing window 10 and index optical waveguide region；
The step is specifically implemented according to following steps：
Step 4.1, with hydrofluoric acid solution erode remaining silica dioxide medium film and cleaned extension on epitaxial wafer
Piece；
Step 4.2, the epitaxial wafer cleaned by step 4.1 is put into quick anneal oven be heat-treated, in heat
In processing procedure, after zinc oxide films film layer a11 induction quantum well mixings, after sequentially passing through ohmic contact layer 8, upper limiting layer 7,
Non-absorbing window 10 is formed at the light extraction Cavity surface at laser both ends；After simultaneous oxidation zinc film layer b12 induction quantum well mixings
Index optical waveguide region is formed at the both ends of laser bar shaped light-emitting zone 9；
The temperature of above-mentioned heat treatment is 600-850 degree, and the time is the 30-200 seconds；
Step 5, using sputtering technology on bar shaped light-emitting zone 9, zinc oxide films film layer a11 and zinc oxide films film layer b12
P side electrode is made simultaneously, after carrying out attenuated polishing to substrate 1, N faces electrode is made in the bottom surface of substrate 1 using evaporation technology, and
And after making p side electrode, N faces electrode, zinc oxide films film layer a11, zinc oxide films film layer b12 n-type doping and upper limiting layer 7,
Substrate 1, cushion 2, lower limit layer 3 just form the NPN structures for stopping that electric current passes through；Then laser bar bar cleavage is carried out again,
Cavity surface film coating is finally carried out to laser using evaporation technology again, that is, completes the making of the semiconductor laser.
In the embodiment of the present invention 1, the width of whole semiconductor laser is 600 microns, a length of 1200 microns of chamber；Wherein,
It is the GaAs that thickness is 300 nanometers to grow obtained cushion 2, and lower limit layer 3 is the aluminum gallium arsenide that thickness is 1400 nanometers, under
Ducting layer 4 is the aluminum gallium arsenide that thickness is 70 nanometers, and it is that the aluminum gallium arsenide quantum that thickness is 10 nanometers builds area that SQW and quantum, which build area 5,
Active area with thickness for 9 nanometers of Al-Ga-In-As single quantum well composition, upper ducting layer 6 is the aluminum gallium arsenide that thickness is 70 nanometers,
Upper limiting layer 7 is the aluminum gallium arsenide that thickness is 1400 nanometers, and upper ohmic contact layer 8 is the GaAs that thickness is 200 nanometers.Bar shaped is sent out
The width in light region 9 is 100 microns, and the identical length of the non-absorbing window 10 at both ends is 50 microns.
The 808nm strip structure high power semi-conductors made using zinc oxide quantum well mixing in the embodiment of the present invention 1
Laser, zinc-oxide film are located at the surrounding of laser bar shaped light-emitting zone 9, and wherein zinc oxide films film layer a11 mixes in SQW
Non-absorbing window 10 is formed after miscellaneous at the Cavity surface of laser, non-absorbing window 10 is hardly inhaled to the output light inside laser
Receive, this just considerably increases the catastrophic optical damage damage threshold of laser, effectively increases the power output of semiconductor laser；Oxygen
Change zinc film layer b12 and form index optical waveguide region at the both ends of laser bar shaped light-emitting zone after quantum well mixing,
Optical confinement factor can be improved, improve light field pattern, increase luminous efficiency；The n-type doping of zinc-oxide film by with it
PN junction in laser structure forms the NPN structures for stopping that electric current passes through, and greatly reduces leakage current, improves the photoelectricity of device
Conversion efficiency.Its of a relatively high thermal conductivity can improve device behind simultaneous oxidation zinc film replacement of silicon dioxide electrical pumping barrier layer
Temperature characterisitic, the leakage current of device when the high-compactness of its material can also reduce hot operation.The strip structure of the present invention is big
Power semiconductor laser delicate structure, technique is simple, and existing process is compatible, is adapted to large-scale production.
The high power semiconductor lasers of above-described embodiment 1 are to grow to be made on gallium arsenide substrate material, and this is big
The material of power semiconductor laser can also select GaAs based material, indium phosphide based material, gallium nitride material or antimony
Gallium based material, and organic semiconductor, nano material or low-dimensional materials.
Claims (8)
1. the semiconductor laser made using zinc oxide quantum well mixing, it is characterised in that including epitaxial wafer, set on epitaxial wafer
Bar shaped light-emitting zone (9) is equipped with, the upper surface growth of epitaxial wafer has zinc oxide film layer, and zinc oxide films film layer is divided into two parts,
Wherein the sub- trap of Part I zinc oxide films film layer inducing amount forms non-absorbing window after mixing at the light extraction Cavity surface at laser both ends
Mouth (10), the depth of non-absorbing window (10) exceed the active area in epitaxial wafer, Part II zinc oxide films film layer inducing amount
Trap at the both ends of laser bar shaped light-emitting zone (9) forms index optical waveguide region after mixing；
The concrete structure of the epitaxial wafer set gradually from top to bottom for：Substrate (1), cushion (2), lower limit layer (3), lower ripple
Conducting shell (4), SQW and quantum build active area, upper ducting layer (6), upper limiting layer (7) and the upper ohmic contact layer of area (5) composition
(8), the bar shaped light-emitting zone (9) is arranged at the longitudinal centre line of ohmic contact layer (8)；
Described zinc oxide films film layer is grown in bar shaped light-emitting zone (9) surrounding after eroding ohmic contact layer (8), oxidation
The thickness of zinc film layer is equal with the thickness of upper ohmic contact layer (8), and described Part I zinc oxide films film layer is zinc oxide
Film layer a (11), described Part II zinc oxide films film layer are zinc oxide films film layer b (12), and zinc oxide films film layer a (11) is adjacent
Narrow bars shape light-emitting zone (9) and positioned at bar shaped light-emitting zone (9) longitudinal direction both ends at, zinc oxide films film layer b (12) adjacent strip
Shape light-emitting zone (9) and at the horizontal both ends of bar shaped light-emitting zone (9).
2. the semiconductor laser according to claim 1 made using zinc oxide quantum well mixing, it is characterised in that institute
The central area for the non-absorbing window (10) stated overlaps with the central area of bar shaped light-emitting zone (9), non-absorbing window (10)
Width is more than or equal to the width of bar shaped light-emitting zone (9), and the depth of non-absorbing window (10) is to sequentially pass through the upper waveguide in part
Floor (6), whole SQW and quantum build the active area and part lower waveguide layer (4) of area (5) composition.
3. the semiconductor laser according to claim 1 made using zinc oxide quantum well mixing, it is characterised in that institute
The bottom surface making for stating substrate (1) has N faces electrode, in bar shaped light-emitting zone (9), zinc oxide films film layer a (11) and zinc-oxide film
Being made simultaneously on layer b (12) has p side electrode, zinc oxide films film layer a (11) and zinc oxide films film layer b (12) n-type doping and upper
Limiting layer (7) and substrate (1), cushion (2), lower limit layer (3) form the NPN structures for stopping that electric current passes through.
4. the preparation method of the semiconductor laser made using zinc oxide quantum well mixing, it is characterised in that specifically according to
Lower step is implemented：
Step 1, selected substrate (1)；
Step 2, using Metalorganic Chemical Vapor Deposition on substrate (1) successively grown buffer layer (2), lower limit layer (3),
Lower waveguide layer (4), SQW and quantum build area (5), upper ducting layer (6), upper limiting layer (7) and upper ohmic contact layer (8), i.e. shape
Into the epitaxial wafer of laser；
Step 3, the laser epitaxial piece superficial growth zinc oxide films film layer a (11) formed in step 2 using sputtering method and
Zinc oxide films film layer b (12)；
Step 4, make non-absorbing window (10) and index optical waveguide region；
Step 5, p side electrode made using sputtering technology, after then carrying out attenuated polishing to substrate (1), then using evaporation technology
N faces electrode is made in the bottom surface of substrate (1), then carries out laser bar bar cleavage again, finally again using evaporation technology to laser
Device carries out cavity surface film coating, that is, completes the making of the semiconductor laser.
5. the preparation method of the semiconductor laser according to claim 4 made using zinc oxide quantum well mixing, its
It is characterised by, the step 3 is specifically implemented according to following steps：
Step 3.1, in upper ohmic contact layer (8) upper surface of laser epitaxial piece, one layer of fine and close silica dioxide medium of growth is thin
Film；
Step 3.2, bar shaped light-emitting zone (9) formed at the longitudinal centre line of upper ohmic contact layer (8) using photoetching technique, so
Corrode the silica dioxide medium film of bar shaped light-emitting zone (9) outside with hydrofluoric acid solution afterwards；
Step 3.3, the upper ohmic contact layer (8) for eroding using the method for wet etching bar shaped light-emitting zone (9) surrounding, and control
Make the thickness that corrosion depth ensures that it is upper ohmic contact layer (8)；
Step 3.4, by by above step processing laser epitaxial piece be put into sputtering chamber, in the mixing of argon gas and oxygen
Sputtering zinc oxide target under atmosphere, in epitaxial wafer superficial growth zinc-oxide film, and control zinc oxide films film layer a (11) and oxidation
Zinc film layer b (12) thickness is equal to 200 nanometers of the thickness of upper ohmic contact layer (8)；
Step 3.5, using photoresist protective layer is done, the oxygen that bar shaped light-emitting zone (9) grows above is eroded using hydrochloric acid solution
Change zinc film, and retain zinc oxide films film layer a (11) and zinc oxide films film layer b (12).
6. the preparation method of the semiconductor laser according to claim 4 made using zinc oxide quantum well mixing, its
It is characterised by, the step 4 is specifically implemented according to following steps：
Step 4.1, with hydrofluoric acid solution erode remaining silica dioxide medium film and cleaned epitaxial wafer on epitaxial wafer；
Step 4.2, the epitaxial wafer cleaned by step 4.1 is put into quick anneal oven be heat-treated, be heat-treated
During, after zinc oxide films film layer a (11) induction quantum well mixings, sequentially pass through ohmic contact layer (8), upper limiting layer (7)
Afterwards, non-absorbing window (10) is formed at the light extraction Cavity surface at laser both ends；Simultaneous oxidation zinc film layer b (12) induces SQW
After mixing index optical waveguide region is formed at the both ends of laser bar shaped light-emitting zone (9).
7. the preparation method of the semiconductor laser according to claim 6 made using zinc oxide quantum well mixing, its
It is characterised by, the temperature being heat-treated in the step 4.2 is 600-850 degree, and the time is the 30-200 seconds.
8. the preparation method of the semiconductor laser according to claim 4 made using zinc oxide quantum well mixing, its
It is characterised by, the p side electrode in the step 5 is in bar shaped light-emitting zone (9), zinc oxide films film layer a (11) and zinc-oxide film
It is made simultaneously on layer b (12).
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| CN108847575B (en) * | 2018-07-16 | 2020-02-21 | 中国科学院半导体研究所 | Preparation method of non-absorption window of semiconductor laser and semiconductor laser |
| CN109921277A (en) * | 2019-04-10 | 2019-06-21 | 苏州长光华芯光电技术有限公司 | Eliminate the method and semiconductor laser of semiconductor laser COMD |
| CN110061416B (en) * | 2019-04-12 | 2020-04-10 | 苏州长光华芯光电技术有限公司 | Non-absorption window of semiconductor laser, preparation method thereof and semiconductor laser |
| CN112615252A (en) * | 2020-12-03 | 2021-04-06 | 中国工程物理研究院应用电子学研究所 | Semiconductor laser and optical fiber coupling structure |
| CN113206448B (en) * | 2021-04-30 | 2023-04-07 | 中国科学院半导体研究所 | Laser with current barrier layer |
| CN114122914A (en) * | 2021-11-11 | 2022-03-01 | 中国科学院半导体研究所 | Laser and preparation method thereof |
| CN116417905B (en) * | 2023-06-08 | 2023-08-18 | 深圳市星汉激光科技股份有限公司 | Structure of laser with PN junction non-injection layer and preparation method thereof |
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| JP2002299765A (en) * | 2001-04-03 | 2002-10-11 | Sony Corp | Semiconductor laser element and method of manufacturing the same |
| CN1417908A (en) * | 2001-11-06 | 2003-05-14 | 中国科学院半导体研究所 | Method of forming non-absorbing window of gallium arsenide/potassium arsenic aluminate laser diode |
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| CN102891435B (en) * | 2012-09-25 | 2014-04-02 | 西安理工大学 | High-power semiconductor laser with non-absorbing windows |
| CN102916338B (en) * | 2012-10-10 | 2018-11-02 | 长春理工大学 | A method of making GaAs base semiconductor laser non-absorbing windows |
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