CN104576826B - Post-processing method of solar cell - Google Patents
Post-processing method of solar cell Download PDFInfo
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- CN104576826B CN104576826B CN201410783167.XA CN201410783167A CN104576826B CN 104576826 B CN104576826 B CN 104576826B CN 201410783167 A CN201410783167 A CN 201410783167A CN 104576826 B CN104576826 B CN 104576826B
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- void region
- sticking lining
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- solar battery
- battery sheet
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- 238000012805 post-processing Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000000137 annealing Methods 0.000 claims abstract description 7
- 238000009766 low-temperature sintering Methods 0.000 claims abstract description 6
- 239000011800 void material Substances 0.000 claims description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 238000013459 approach Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 229920006361 Polyflon Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000009719 polyimide resin Substances 0.000 claims description 3
- 229920002545 silicone oil Polymers 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 230000001788 irregular Effects 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000001035 drying Methods 0.000 abstract description 2
- 238000002161 passivation Methods 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 13
- 230000005611 electricity Effects 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 208000031481 Pathologic Constriction Diseases 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 210000001215 vagina Anatomy 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a post-processing method of a solar cell. The anti-subfissure capability of the solar cell and the subsequent solar module is greatly improved by adopting the non-stick coating; the low-temperature sintering can not only play a role in drying the non-stick coating, but also can effectively repair micro defects in the battery piece; meanwhile, the uniformity and compactness of the silicon nitride film can be effectively improved, and the passivation effect of the silicon nitride film is increased, so that the service life of minority carriers of the cell is prolonged to a certain extent; in addition, the battery piece subjected to high-temperature annealing can improve the PID resistance, has great production practice value and enhances the competitiveness of enterprises.
Description
Technical field
The present invention relates to solaode manufacture technology field, and in particular to a kind of post processing side of solar battery sheet
Method.
Background technology
With the continuous development in crystal silicon solar market, increasing quality problems are exposed, in the industry for light
Photovoltaic cell components quality understanding is also more and more deep.Hidden the splitting of photovoltaic module be just subject to more attention at present, that is, be encapsulated in photovoltaic group
There is the phenomenon of sliver in solar battery sheet in part.Due to presence and the viscosity of EVA of encapsulation, there is each portion of battery of sliver
Morcel.Too big change be can't see from outward appearance and output in short-term, be only capable of making
Use electroluminescent tester table（EL）Measure.But there is the effect of being expanded with heat and contract with cold between cell piece sliver in the long run thoroughly to be divided
From the hidden danger for affecting to generate electricity, serious possibility causes partial piece to be not turned on, and affects power, or even produces hot spot and catch fire danger
Danger.
Substantial amounts of power station is found that the visual condition of entitled " lightning stricture of vagina " in the recent period, becomes manufacturer, installs business and power station industry
Main concern and bone of contention.Through researching and analysing discovery, although lightning stricture of vagina not exclusively hidden splitting is caused, invariably accompany
The hidden appearance split and occur.Although current affect little to generated output.But outward appearance is affected, causes client's acceptance to be deteriorated, it is long
Phase may bring other performances and potential safety hazard.
Cause the hidden Producing reason that splits to have a lot, the production of photovoltaic module, packaging, transport, install and install after ring
Border stress：Wind, snow, hail and temperature change etc. are likely to cause hidden splitting.But return thorough investigation bottom, the self-strength of photovoltaic module is still
Need to improve.
Silicon nitride film directly affects electricity as traditional crystalline silicon solar cell inactivating antireflective film, the change of its performance
The transformation efficiency in pond.At present, no matter from producer or user, the polarity effect to crystalline silicon battery plate（PID）Concern
It is more and more.The article that the NREL of in July, 2011 is delivered at which《System Voltage Potential Induced
Degradation Mechanisms in PV Modules and Methods for Test》In PID has been carried out it is detailed
Explanation.PID phenomenons are understood by more people at present, and have increasing research institution and module manufacturer to carry out which
In-depth study and publish an article.PID Free by many component factories and Battery Plant as one of attraction, many photovoltaic modulies
User also begins to the component for only receiving PID Free.
The content of the invention
The purpose of the present invention is a kind of post-processing approach of the solar battery sheet provided for the problems referred to above, using the party
Method can not only greatly improve the anti-hidden ability of splitting of solar battery sheet and follow-up solar components, also effectively improve electricity
The electricity conversion in pond, increases the ability of the anti-PID of cell piece, is worth with great production practices, strengthens the competition of enterprise
Power.
The technical scheme that a kind of post-processing approach of solar battery sheet of the present invention is adopted is for by silicon chip through surface knot
Structure, making emitter stage, periphery etching, phosphorosilicate glass removal, silicon nitride film, silk-screen positive and negative electrode and back of the body aluminum, sintering step,
The solar battery sheet that sintering step is completed makes one layer of non-sticking lining in aluminum back surface field, then carries out low-temperature sintering.
Described low-temperature sintering is that the cell piece for having made non-sticking lining is put in annealing furnace, is passed through gas, keeps temperature
0-500 DEG C of degree, time 0-1500s.
Gas is passed through for hydrogen.
Described non-sticking lining is polyflon, silicone oil or polyimide resin.
Described non-sticking lining is by being screen-printed in cell piece aluminum back surface field.
Described non-sticking lining local hollow out, is shaped as grid or helical structure.
Described non-sticking lining thickness is 1-100 microns, and void region accounts for non-sticking lining gross area ratio for 20 ~ 80%.
When non-sticking lining is shaped as grid, described network void region is uniformly distributed, and void region is rule
Figure or irregular figure, network void region mean breadth are 0.1-50mm, and the non-void region of network is averagely wide
Spend for 0.1-50mm.
When non-sticking lining is shaped as helical structure, described helical structure is at least one, and helical structure is uniformly distributed,
Its helical structure void region mean breadth is 0.1-50mm, and the non-void region mean breadth of helical structure is 0.1-50mm.
The solar battery sheet can be the crystal-silicon battery slices such as monocrystalline, polycrystalline, class monocrystalline.
The invention has the beneficial effects as follows：Use intensity toughness of the present invention all compares high non-sticking lining to strengthen solar-electricity
The intensity and toughness of pond piece, can greatly improve the anti-hidden ability of splitting of solar battery sheet and follow-up solar components；It is low
Temperature sintering can not only play the drying effect to non-sticking lining, additionally it is possible to effectively repairing the microdefect in cell piece；Simultaneously
The uniformity and compactness of silicon nitride film can be effectively improved, the passivation effect of silicon nitride film is increased, so electricity
The minority carrier lifetime of pond piece has obtained certain raising；In addition, the cell piece through high annealing can improve its anti-PID's
Ability, is worth with great production practices, strengthens the competitiveness of enterprise.
Figure of description
Fig. 1 show the structure of 1 non-sticking lining of the embodiment of the present invention；
Fig. 2 show the structure of 2 non-sticking lining of the embodiment of the present invention.
Wherein, 1- void regions, the non-void regions of 2-.
Specific embodiment：
For a better understanding of the present invention, with reference to example illustrating technical scheme, but the present invention is simultaneously
It is not limited to this.
Embodiment 1：
Select polysilicon chip；1）By silicon chip entered surface structuration, make emitter stage, periphery etching, phosphorosilicate glass remove,
Silicon nitride film, silk-screen positive and negative electrode and back of the body aluminum, sintering；2）By a layer thickness is made in step 1 gained cell piece aluminum back surface field it is
20 microns of non-sticking linings, described non-sticking lining are polyflon；3）Step 2 gained cell piece is carried out being put into annealing
In stove, hydrogen gas, 300 DEG C of keeping temperature, time 220s are passed through.Non-sticking lining adopts network hollow out, and such as description is attached
Shown in figure Fig. 1, void region 1 is square, and 1 width of network void region is 0.8mm, the non-void region of network 2
Width is 1mm.
Embodiment 2：
Select monocrystalline silicon piece；1）By silicon chip entered surface structuration, make emitter stage, periphery etching, phosphorosilicate glass remove,
Silicon nitride film, silk-screen positive and negative electrode and back of the body aluminum, sintering；2）By a layer thickness is made in step 1 gained cell piece aluminum back surface field it is
30 microns of non-sticking linings, described non-sticking lining are polyimide resin；3）Step 2 gained cell piece is carried out being put into annealing furnace
In, it is passed through hydrogen gas, 200 DEG C of keeping temperature, time 500s.Non-sticking lining adopts helical structure hollow out, its helical structure to engrave
1 mean breadth of dummy section is 2mm, and non-2 mean breadth of void region of helical structure is 2mm.
Embodiment 3
Select monocrystalline silicon piece；1）By silicon chip entered surface structuration, make emitter stage, periphery etching, phosphorosilicate glass remove,
Silicon nitride film, silk-screen positive and negative electrode and back of the body aluminum, sintering；2）By a layer thickness is made in step 1 gained cell piece aluminum back surface field it is
50 microns of non-sticking linings, described non-sticking lining are silicone oil；3）Step 2 gained cell piece is carried out being put in annealing furnace, is passed through
Hydrogen gas, 260 DEG C of keeping temperature, time 400s.Non-sticking lining adopts network hollow out, as shown in Figure of description Fig. 1,
Void region 1 is ellipse, and 1 mean breadth of network void region is 1.5mm, and the non-void region of network 2 is average wide
Spend for 3mm.
Claims (4)
1. a kind of post-processing approach of solar battery sheet, by silicon chip through surface structuration, make emitter stage, periphery etching,
Phosphorosilicate glass removal, silicon nitride film, silk-screen positive and negative electrode and back of the body aluminum, sintering step, it is characterised in that sintering step is completed
Solar battery sheet one layer of non-sticking lining is made in aluminum back surface field, then carry out low-temperature sintering；
Described low-temperature sintering is that the cell piece for having made non-sticking lining is put in annealing furnace, is passed through hydrogen, keeping temperature
200-500 DEG C, time 220-1500s；
Described non-sticking lining is polyflon, silicone oil or polyimide resin；
Described non-sticking lining local hollow out, is shaped as grid or helical structure；
Described non-sticking lining thickness is 1-100 microns, and void region accounts for non-sticking lining gross area ratio for 20 ~ 80%.
2. a kind of post-processing approach of solar battery sheet according to claim 1, it is characterised in that described not snearing
Layer is by being screen-printed in cell piece aluminum back surface field.
3. a kind of post-processing approach of solar battery sheet according to claim 1, it is characterised in that described grid knot
Structure void region is uniformly distributed, and void region is regular figure or irregular figure, and network void region mean breadth is
0.1-50mm, the non-void region mean breadth of network are 0.1-50mm.
4. a kind of post-processing approach of solar battery sheet according to claim 1, it is characterised in that described spiral knot
Structure is at least one, and helical structure is uniformly distributed, and its helical structure void region mean breadth is 0.1-50mm, and helical structure is non-
Void region mean breadth is 0.1-50mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410783167.XA CN104576826B (en) | 2014-12-17 | 2014-12-17 | Post-processing method of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410783167.XA CN104576826B (en) | 2014-12-17 | 2014-12-17 | Post-processing method of solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN104576826A CN104576826A (en) | 2015-04-29 |
| CN104576826B true CN104576826B (en) | 2017-04-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410783167.XA Active CN104576826B (en) | 2014-12-17 | 2014-12-17 | Post-processing method of solar cell |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4019601A4 (en) | 2019-11-19 | 2023-12-13 | Hangzhou First Applied Material Co., Ltd. | Adhesive film, anti-pid encapsulation adhesive film, composition forming adhesive film, and photovoltaic module and laminated glass |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102017176A (en) * | 2008-03-25 | 2011-04-13 | 应用材料股份有限公司 | Surface cleaning and texturing process for crystalline solar cells |
| WO2011056948A3 (en) * | 2009-11-05 | 2011-08-25 | Advanced Technology Materials, Inc. | Methods of texturing surfaces for controlled reflection |
| CN102272947A (en) * | 2008-10-31 | 2011-12-07 | 陶氏康宁公司 | Photovoltaic cell module and method of forming |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8207442B2 (en) * | 2006-04-18 | 2012-06-26 | Itn Energy Systems, Inc. | Reinforcing structures for thin-film photovoltaic device substrates, and associated methods |
| TWI615367B (en) * | 2012-10-12 | 2018-02-21 | 康寧公司 | Articles having retained strength |
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- 2014-12-17 CN CN201410783167.XA patent/CN104576826B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102017176A (en) * | 2008-03-25 | 2011-04-13 | 应用材料股份有限公司 | Surface cleaning and texturing process for crystalline solar cells |
| CN102272947A (en) * | 2008-10-31 | 2011-12-07 | 陶氏康宁公司 | Photovoltaic cell module and method of forming |
| WO2011056948A3 (en) * | 2009-11-05 | 2011-08-25 | Advanced Technology Materials, Inc. | Methods of texturing surfaces for controlled reflection |
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| CN104576826A (en) | 2015-04-29 |
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