CN104576785A - Mutation relaxation buffer layer for InGaAs probe with high In component - Google Patents
Mutation relaxation buffer layer for InGaAs probe with high In component Download PDFInfo
- Publication number
- CN104576785A CN104576785A CN201410728282.7A CN201410728282A CN104576785A CN 104576785 A CN104576785 A CN 104576785A CN 201410728282 A CN201410728282 A CN 201410728282A CN 104576785 A CN104576785 A CN 104576785A
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- Prior art keywords
- ingaas
- component
- inas
- sudden change
- buffer layer
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title claims abstract description 44
- 230000035772 mutation Effects 0.000 title claims abstract description 10
- 239000000523 sample Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229910000673 Indium arsenide Inorganic materials 0.000 claims abstract description 31
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 230000008859 change Effects 0.000 claims description 27
- 239000004615 ingredient Substances 0.000 claims description 20
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 4
- 238000011160 research Methods 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
Abstract
The invention relates to a mutation relaxation buffer layer for an InGaAs probe with a high In component. An InAs mutation relaxation layer extends on a semiconductor substrate; an arsenide variation structural material of which the In component extends on the InAs mutation relaxation layer and gradually changes in a reversed direction is used as a buffer layer. According to a research method of the InGaAs infrared probe which is arranged on an expandable semiconductor substrate and is provided with the wavelength of more than 1.7 microns, the arsenide variation buffer layer structure of which the In component gradually changes in the reversed direction is adopted, the strain in a larger mismatch InGaAs material can be better released in an expected manner, so that the defect density in an InGaAs absorption layer is reduced, and the device performance is improved; the greater freedom degree is led into a structural designing method of the InGaAs infrared probe with the wavelength of more than 1.7 microns, and the mutation relaxation buffer layer has wide application prospect.
Description
Technical field
The invention belongs to Semiconductor Optoeletronic Materials and devices field, particularly a kind of sudden change relaxed buffer layers for high In ingredient InGaAs detector.
Background technology
Because InGaAs material is full constituent direct band gap material, by regulating In component, 0.8 ~ 3.5 mu m waveband can be covered.And the advantages such as highly sensitive, fast response time, radiation-resisting performance are good, working and room temperature that InGaAs detector has, therefore InGaAs is the ideal material preparing short infrared wave band detector.Such as, room temperature cut-off wavelength is the In of 1.7 μm
0.53ga
0.47as detector is applied widely in optical communication field, and material primary growth is in the InP substrate of mating with it, but along with In component continuation raising, between InGaAs material and InP substrate, mismatch can be increasing.When In component is 83%, In
0.83ga
0.17mismatch between As and InP substrate increases to+2.1%.Owing to lacking the substrate of Lattice Matching, the defect concentration in expansion wavelength InGaAs material for detector becomes and causes its device dark electric current comparatively large, restricts one of key factor of its application.In view of the restriction of the aspects such as InAs substrate band gap is narrower, preparation difficulty, apply its possibility as substrate growth high In ingredient InGaAs material and greatly reduce.As compared to the substrate such as InP with InAs, GaAs substrate has that mechanical strength is high, size is large and the excellent properties such as cheap, is one of good selection of development low-dark current density, large face battle array InGaAs infrared focal plane device.But, due to the mismatch between InAs and GaAs comparatively large (+6.7%), relative to substrates such as InP and InAs, high In ingredient In
xga
1-xthere is larger mismatch between As (0.53<x<1) and GaAs substrate, this will be unfavorable for high-quality material epitaxial growth.Therefore need the resilient coating growing a fixed structure between substrate and epitaxial loayer, to discharge larger compressive strain, blocking effect is produced to dislocation simultaneously, to reduce defect concentration in InGaAs absorbed layer, reduce device dark current.For the growth of larger mismatched material, the method of " virtual substrate " is constructed in usual employing, namely by the buffer layer structure at conventional commercial Grown lattice constant alternation, make it to mate from mating with substrate lattice to transit to gradually with device active region material lattice, reduce the mismatch between epitaxial loayer and substrate, the research of mismatch mutation system made of new structural material in mismatch substrate and device can be opened up by the method.But, when passing through varied buffer layer structure growth InGaAs material at present on the substrates such as InP and GaAs, substantially the InAlAs varied buffer layer structure all adopting In component to increase progressively gradually, namely In component is forward graded approach, mismatch lower feature when this is also relatively applicable to lower In component, and the growth of larger mismatch InGaAs material when being directed to high In ingredient, it is also conceivable to the buffer layer structure adopting In component reverse grading.
For GaAs substrate, when buffer layer structure according to component reverse grading prepares high In ingredient InGaAs panel detector structure material, because the mismatch between InAs and GaAs is up to 6.7%, therefore InAs critical thickness is on gaas substrates thinner, the easy InAs material obtaining height relaxation, if insert the strain compensation superlattice in suitable cycle at substrate and InAs interface layer place, be expected to away from obtaining the good InAs layer of crystalline quality near the top layer at interface; Now, then adopt conventional containing alas cpd as resilient coating time, can adopt the mode that In component is successively decreased gradually, namely In component is decremented to component needed for absorbed layer gradually by 100% in InAs.As adopted In
xal
1-xduring As resilient coating, then (y is In In component x to be reduced to y by 1
yga
1-yin component in As absorbed layer), and lattice constant between identical InAlAs and the InGaAs of In component is very close, thus realize lattice constant by the gradually transition of InAs to InGaAs.For growing the buffer layer structure of In component forward alternation on gaas substrates, on the one hand, because a large amount of misfit dislocations mainly produces between GaAs substrate and InAs layer, the threading dislocation grown in the InAlAs resilient coating on the InAs layer after height relaxation is expected to obtain and reduces; On the other hand, for the InGaAs material of growth high In ingredient, the mismatch between InGaAs and InAs is much smaller relative to GaAs, as In
0.8ga
0.2mismatch between As and GaAs is+5.73%, and and mismatch between InAs be only-1.34%.Therefore, adopt the buffer layer structure of In component reverse grading, under buffer layer thickness one stable condition, mismatch speed can be controlled little as much as possible, thus reduce the phenomenons such as the slippage that produces under larger effect of stress of dislocation, be conducive to that misfit dislocation is buried in oblivion not enter in absorbed layer in resilient coating, thus be expected to the InGaAs absorbed layer material obtaining crystalline quality raising, reduce device dark current density.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of sudden change relaxed buffer layers for high In ingredient InGaAs detector, this panel detector structure can expand the method for production that wavelength in Semiconductor substrate is greater than the InGaAs Infrared Detectors of 1.7 μm, what adopt In component reverse grading contains aluminum arsenide varied buffer layer structure, be expected to the strain better discharged in larger mismatch InGaAs material, reduce defect concentration in InGaAs absorbed layer, improve device performance.
A kind of sudden change relaxed buffer layers for high In ingredient InGaAs detector of the present invention, extension InAs sudden change relaxed layer obtains smooth material surface on a semiconductor substrate, suddenly change the arsenide mutation structural material of extension In component reverse grading in relaxed layer as resilient coating subsequently at InAs, grow the resilient coating of larger mismatch high In ingredient InGaAs detector, thus realize lattice constant by the gradually transition of InAs to InGaAs.
Described Semiconductor substrate is the common commercial substrate such as GaAs, InP, Si or Ge.
The thickness of described InAs sudden change relaxed layer is 50nm ~ 5 μm, to make its complete relaxation.
The In component of described InAs sudden change relaxed layer is 100%.
Described arsenide mutation structural material is InAlAs or InGaAs of ternary, or the InAlGaAs of quaternary.
In described resilient coating, In component is extremely identical with In component in absorbed layer InGaAs by 100% reverse grading in InAs.
Described reverse grading mode is continuous or gradient.
beneficial effect
(1) buffer layer structure provided by the invention is applicable to the InGaAs Infrared Detectors compared with high In ingredient prepared by Semiconductor substrate, is especially applicable to wavelength and is greater than 1.7 μm of In
xga
1-xthe preparation of As (x>0.53) detector, improves and prepares the degree of freedom of high In ingredient InGaAs detector on substrate is selected and the diversity in structure choice.
(2) compared with the substrates such as GaAs, due to high In ingredient In
xga
1-xthe mismatch that As (x>0.53) and InAs suddenlys change between relaxed layer is relatively low, epitaxial loayer critical thickness is made to obtain increase to a certain extent, when maintaining buffer layer thickness and being constant, during the mismatch speed ratio forward alternation of the buffer layer structure of In component reverse grading can be lower, threading dislocation density in absorbed layer can be reduced by the growth of low mismatch speed to buffer layer, be expected to the crystalline quality improving absorbed layer, improve device performance.
(3) sudden change relaxation component reverse grading resilient coating thought provided by the invention has reference equally for the growth of other larger mismatched material systems, has good versatility, reduces the constraint of mismatched material growth for substrate.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is the structural representation of embodiment 1;
Fig. 3 is the structural representation of embodiment 2.
Embodiment
Below in conjunction with specific embodiment, set forth the present invention further.Should be understood that these embodiments are only not used in for illustration of the present invention to limit the scope of the invention.In addition should be understood that those skilled in the art can make various changes or modifications the present invention, and these equivalent form of values fall within the application's appended claims limited range equally after the content of having read the present invention's instruction.
Embodiment 1
GaAs substrate is applicable to In
0.8ga
0.2the sudden change relaxation reverse grading resilient coating of As detector
(1) adopt the GaAs monocrystal material in [100] crystal orientation as substrate, adopt common molecular beam epitaxy method to be first about the InAs of 0.5 μm at Grown thickness as sudden change relaxed layer, obtain comparatively even curface;
(2) graded buffer layer of regrowth In component reverse grading, is respectively: the In that thickness is 0.4 μm
0.9al
0.1as layer, the In that thickness is 0.4 μm
0.85al
0.15as layer, the In that thickness is 0.4 μm
0.8al
0.2as layer, is required applicable In
0.8ga
0.2the sudden change relaxation reverse grading buffer layer structure of As detector.
Embodiment 2
InP substrate is applicable to In
0.8ga
0.2the sudden change relaxation reverse grading resilient coating of As detector
(1) adopt the InP monocrystal material in [100] crystal orientation as substrate, adopt common molecular beam epitaxy method to be first about the InAs of 1 μm at Grown thickness as sudden change relaxed layer, obtain comparatively even curface;
(2) In of then growth thickness 0.1 μm
0.95al
0.05as layer;
(3) In of the reverse alternation continuously of the In component of regrowth thickness 2 μm
xal
1-xas resilient coating, wherein x is by 0.95 reverse grading to 0.8, and its mismatch speed is about 0.67%/μm, this structure is in InP substrate and is applicable to In
0.8ga
0.2the sudden change relaxation reverse grading buffer layer structure of As detector.
Claims (7)
1. the sudden change relaxed buffer layers for high In ingredient InGaAs detector, it is characterized in that: extension InAs suddenlys change relaxed layer on a semiconductor substrate, suddenly change the arsenide mutation structural material of extension In component reverse grading in relaxed layer as resilient coating at InAs subsequently.
2. a kind of sudden change relaxed buffer layers for high In ingredient InGaAs detector according to claim 1, is characterized in that: described Semiconductor substrate is GaAs, InP, Si or Ge.
3. a kind of sudden change relaxed buffer layers for high In ingredient InGaAs detector according to claim 1, is characterized in that: the thickness of described InAs sudden change relaxed layer is 50nm ~ 5 μm.
4. a kind of sudden change relaxed buffer layers for high In ingredient InGaAs detector according to claim 1, is characterized in that: the In component of described InAs sudden change relaxed layer is 100%.
5. a kind of sudden change relaxed buffer layers for high In ingredient InGaAs detector according to claim 1, is characterized in that: described arsenide mutation structural material is InAlAs or InGaAs of ternary, or the InAlGaAs of quaternary.
6. a kind of sudden change relaxed buffer layers for high In ingredient InGaAs detector according to claim 1, is characterized in that: in described resilient coating, In component is extremely identical with In component in absorbed layer InGaAs by 100% reverse grading in InAs.
7. a kind of sudden change relaxed buffer layers for high In ingredient InGaAs detector according to claim 6, is characterized in that: described reverse grading mode is continuous or gradient.
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| CN201410728282.7A CN104576785B (en) | 2014-12-04 | 2014-12-04 | A kind of sudden change relaxed buffer layers for high In ingredient InGaAs detector |
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| CN201410728282.7A CN104576785B (en) | 2014-12-04 | 2014-12-04 | A kind of sudden change relaxed buffer layers for high In ingredient InGaAs detector |
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| CN104576785B CN104576785B (en) | 2016-08-17 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106856211A (en) * | 2016-11-28 | 2017-06-16 | 中国科学院上海微系统与信息技术研究所 | High In ingredient InGaAs detectors and preparation method thereof on a kind of Si (001) substrate |
| CN109196658A (en) * | 2016-05-31 | 2019-01-11 | 欧司朗光电半导体有限公司 | Method for detecting the device of UV radiation and for manufacturing device |
| CN109282330A (en) * | 2018-11-09 | 2019-01-29 | 杭州老板电器股份有限公司 | Infrared measurement of temperature electromagnetic stove |
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-
2014
- 2014-12-04 CN CN201410728282.7A patent/CN104576785B/en not_active Expired - Fee Related
Patent Citations (6)
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| US5518934A (en) * | 1994-07-21 | 1996-05-21 | Trustees Of Princeton University | Method of fabricating multiwavelength infrared focal plane array detector |
| US20030034491A1 (en) * | 2001-08-14 | 2003-02-20 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109196658A (en) * | 2016-05-31 | 2019-01-11 | 欧司朗光电半导体有限公司 | Method for detecting the device of UV radiation and for manufacturing device |
| CN109196658B (en) * | 2016-05-31 | 2022-03-01 | 欧司朗光电半导体有限公司 | Device for detecting UV radiation and method for producing a device |
| CN106856211A (en) * | 2016-11-28 | 2017-06-16 | 中国科学院上海微系统与信息技术研究所 | High In ingredient InGaAs detectors and preparation method thereof on a kind of Si (001) substrate |
| CN106856211B (en) * | 2016-11-28 | 2018-10-19 | 中国科学院上海微系统与信息技术研究所 | High In ingredient InGaAs detectors and preparation method thereof on a kind of Si (001) substrate |
| CN109282330A (en) * | 2018-11-09 | 2019-01-29 | 杭州老板电器股份有限公司 | Infrared measurement of temperature electromagnetic stove |
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