CN104575377A - Pixel circuit and driving method thereof as well as active matrix organic light emitting display - Google Patents
Pixel circuit and driving method thereof as well as active matrix organic light emitting display Download PDFInfo
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Abstract
The invention provides a pixel circuit and a driving method thereof as well as an active matrix organic light emitting display. By eliminating the current flowing through a third thin film transistor before threshold voltage compensation to prevent the lag effect of the third thin film transistor, and thus a response speed is increased; meanwhile, the current output by the third thin film transistor is determined by data voltage provided by a data wire and a first supply voltage provided by a first power supply, and is unrelated to the threshold voltage of the third thin film transistor, so that uneven brightness caused by threshold voltage deviation can be avoided. Accordingly, display problems caused by threshold voltage deviation and the lag effect of the driving transistor can be avoided by adopting the pixel circuit and the driving method thereof as well as the active matrix organic light emitting display and higher uniformity of luminance and the higher response speed are achieved.
Description
Technical field
The present invention relates to technical field of flat panel display, particularly a kind of image element circuit and driving method thereof and active matrix/organic light emitting display.
Background technology
Organic light emitting display utilizes Organic Light Emitting Diode (English full name Organic Lighting Emitting Diode, be called for short OLED) show image, it is a kind of display of active illuminating, its display mode and traditional Thin Film Transistor-LCD (English full name Thin Film Transistor liquid crystal display, be called for short TFT-LCD) display mode difference, without the need to backlight, and, have that contrast is high, fast response time, a plurality of advantages such as frivolous.Therefore, organic light emitting display is described as the display of a new generation that can replace Thin Film Transistor-LCD.
According to the difference of type of drive, organic light emitting display is divided into passive-matrix organic light emitting display (English full name Passive Matrix Organic Lighting Emitting Display, be called for short PMOLED) and active matrix organic light-emitting display (English full name Active Matrix Organic Lighting Emitting Display, be called for short AMOLED), active matrix organic light-emitting display is also referred to as active matrix/organic light emitting display.
Active matrix/organic light emitting display comprises the pel array that sweep trace, data line and described sweep trace and data line define, and each pixel of described pel array generally includes Organic Light Emitting Diode and for driving the image element circuit of described Organic Light Emitting Diode.Please refer to Fig. 1, it is the structural representation of the image element circuit of the active matrix/organic light emitting display of prior art.As shown in Figure 1, existing image element circuit 10 generally includes switching thin-film transistor T1, drive thin film transistor (TFT) T2 and memory capacitance Cs, the grid of described switching thin-film transistor T1 is connected with sweep trace Sn, the source electrode of described switching thin-film transistor T1 is connected with data line, the grid of described driving thin film transistor (TFT) T2 is connected with the drain electrode of described switching thin-film transistor T1, the source electrode of described driving thin film transistor (TFT) T2 is connected with the first power supply ELVDD by the first power supply cabling (not shown), the drain electrode of described driving thin film transistor (TFT) T2 is connected with the anode of described Organic Light Emitting Diode OLED, the negative electrode of described Organic Light Emitting Diode OLED is connected with second source ELVSS by second source cabling (not shown).
When opening described switching transistor T1 by sweep trace S (n), the data voltage Vdata that data line provides is stored into memory capacitance Cs via described switching transistor T1, thus control described driving transistors T2 generation current, to drive Organic Light Emitting Diode OLED luminous.Now, the computing formula flowing through the electric current I between described driving transistors T2 source electrode and drain electrode is:
Ion＝K×(Vgs-|Vth|)
2
Wherein, K is that the electron mobility of thin film transistor (TFT), breadth length ratio, unit-area capacitance three are long-pending, and Vgs is the gate source voltage of driving transistors T2, the voltage difference namely between grid and source electrode, and Vth is the threshold voltage of driving transistors T2.
Because the gate source voltage Vgs2 of driving transistors T2 equals ELVDD-Vdata, the electric current I on therefore flowed through between described driving transistors T2 source electrode and drain electrode can calculate according to following formula:
Ion＝K×(ELVDD-Vdata-|Vth|)
2
But, when described image element circuit 10 drives pixel, because drive current Ion flows continuously through driving transistors T2 to described Organic Light Emitting Diode OLED, described driving transistors T2 produces lag-effect (hysteresis) because continuing to bear voltage stress (voltage stress), and namely the family curve of driving transistors T2 is delayed.
Please refer to Fig. 2, it is that in the image element circuit of prior art, the family curve of driving transistors to off is schemed with characteristic contrast the from off on.As shown in Figure 2, the family curve A of driving transistors to off there are differences with the family curve B from off on, and namely change appears in transistor characteristor characteristic curve.In other words, when pixel show many frames black after display white time, may due to display black time period during driving transistors continue cut-off voltage, transistor characteristor characteristic curve is changed, then fully do not reach target brightness value in the initial time section of display white, therefore response speed is slack-off.And the response speed of pixel is slack-off, the sharpness of display frame can be caused to be deteriorated and the display problem such as image retention.
Base this, how to solve the problem that existing active matrix/organic light emitting display causes the response speed of pixel slack-off because of the delayed of driving transistors, the technical matters having become those skilled in the art urgently to be resolved hurrily.
Summary of the invention
The object of the present invention is to provide a kind of image element circuit and driving method thereof and active matrix/organic light emitting display, to solve the problem that existing active matrix/organic light emitting display causes the response speed of pixel slack-off because of the delayed of driving transistors.
For solving the problem, the invention provides a kind of image element circuit, described image element circuit comprises:
Organic Light Emitting Diode, is connected between the first power supply and second source;
The first film transistor, be connected between the first power supply and Section Point, its grid is connected to launch-control line;
Second thin film transistor (TFT), be connected to the 3rd between node and the anode of Organic Light Emitting Diode, its grid is connected to launch-control line;
3rd thin film transistor (TFT), be connected between Section Point and the 3rd node, its grid receives first node;
4th thin film transistor (TFT), be connected between first node and the 3rd node, its grid is connected to three scan line;
5th thin film transistor (TFT), be connected between first node and the 3rd power supply, its grid is connected to the second sweep trace;
6th thin film transistor (TFT), is connected between data line and Section Point, and its grid is connected to three scan line;
7th thin film transistor (TFT), be connected between the first power supply and first node, its grid is connected to the first sweep trace;
Memory capacitance, is connected between the first power supply and first node.
Optionally, in described image element circuit, described first power supply and second source are used as the driving power of described Organic Light Emitting Diode, and described 3rd power supply is used for providing reference voltage.
Optionally, in described image element circuit, described the first film transistor is P-type TFT to the 7th thin film transistor (TFT).
Optionally, in described image element circuit, described 3rd thin film transistor (TFT) is as driving transistors, the first supply voltage that the data voltage that the electric current that described 3rd thin film transistor (TFT) is provided to described Organic Light Emitting Diode is provided by described data line and the first power supply provide determines, and the threshold voltage of the second source voltage provided with described second source, reference voltage that the 3rd power supply provides and the 3rd thin film transistor (TFT) has nothing to do.
Optionally, described 7th thin film transistor (TFT) is controlled by the first sweep trace, and described 4th thin film transistor (TFT) and the 6th thin film transistor (TFT) are all controlled by three scan line, and described the first film transistor and the second thin film transistor (TFT) are all by emission control line traffic control.
Accordingly, present invention also offers a kind of driving method of image element circuit, the driving method of described image element circuit comprises: the scan period comprises first time period, the second time period, the 3rd time period and the 4th time period, wherein,
In first time period, the sweep signal that first sweep trace provides becomes low level from high level, the sweep signal that second sweep trace and three scan line provide is high level, the control signal that launch-control line provides is low level, open the first film transistor, the second thin film transistor (TFT) and the 7th thin film transistor (TFT), eliminate the electric current flowing through the 3rd thin film transistor (TFT);
In the second time period, the sweep signal that first sweep trace and three scan line provide and the control signal that launch-control line provides are high level, the sweep signal that second sweep trace provides becomes low level from high level, open the 5th thin film transistor (TFT), by the 3rd power supply, initialization is carried out to described first node.
In the 3rd time period, the sweep signal that first sweep trace and the second sweep trace provide and the control signal that launch-control line provides are high level, the sweep signal that three scan line provides becomes low level from high level, open the 4th thin film transistor (TFT) and the 6th thin film transistor (TFT), the threshold voltage of the 3rd thin film transistor (TFT) is compensated;
In the 4th time period, the sweep signal that first sweep trace and the second sweep trace provide is high level, the sweep signal that three scan line provides becomes high level from low level, the control signal that launch-control line provides becomes low level from high level, after closedown the 4th thin film transistor (TFT) and the 6th thin film transistor (TFT), open the first film transistor and the second thin film transistor (TFT), the 3rd thin film transistor (TFT) output current also drives described organic light-emitting diode.
Optionally, in the driving method of described image element circuit, the described scan period also comprised for the 5th time period, and described 5th time period is arranged between first time period and the second time period;
In the 5th time period, the sweep signal that first sweep trace provides keeps low level, the sweep signal that second sweep trace and three scan line provide all keeps high level, and the control signal that launch-control line provides becomes high level from low level, and described Organic Light Emitting Diode stops luminous.
Optionally, in the driving method of described image element circuit, the described scan period also comprised for the 6th time period; Described 6th time period is arranged between the second time period and the 3rd time period;
In the 6th time period, the sweep signal that first sweep trace and three scan line provide and the control signal that launch-control line provides all keep high level, the sweep signal that second sweep trace provides becomes high level from low level, closes the 5th thin film transistor (TFT), stops the initialization to first node.
Accordingly, present invention also offers a kind of active matrix/organic light emitting display, described active matrix/organic light emitting display comprises: display unit, scanner driver and data driver; Described display unit comprises multiple pixel, and described multiple pixel is arranged in the intersection region of sweep trace and data line in the matrix form, and each pixel is connected with sweep trace and data line, and described pixel comprises image element circuit as above.
In image element circuit provided by the invention and driving method and active matrix/organic light emitting display thereof, by eliminating the electric current flowing through the 3rd thin film transistor (TFT) before threshold voltage compensation, prevent the 3rd thin film transistor (TFT) from occurring lag-effect, thus raising response speed, simultaneously, the first supply voltage that the data voltage that the electric current that described 3rd thin film transistor (TFT) exports is provided by data line and the first power supply provide determines, and have nothing to do with the threshold voltage of described 3rd thin film transistor (TFT), therefore, it is possible to avoid the brightness disproportionation caused by threshold voltage deviation, thus, adopt the active square organic light emitting display of described image element circuit and driving method thereof can avoid the display problem caused by the threshold voltage deviation of driving transistors and lag-effect simultaneously, there is higher brightness uniformity and response speed faster.
Accompanying drawing explanation
Fig. 1 is the structural representation of the image element circuit of the active matrix/organic light emitting display of prior art;
Fig. 2 is that in the image element circuit of prior art, the family curve of driving transistors to off contrasts figure with characteristic from off on;
Fig. 3 is the structural representation of the image element circuit of the embodiment of the present invention;
Fig. 4 is the sequential chart of the driving method of the image element circuit of the embodiment of the present invention;
Fig. 5 is the structural representation of the active array organic light emitting display device of the embodiment of the present invention.
Embodiment
A kind of image element circuit proposed the present invention below in conjunction with the drawings and specific embodiments and driving method thereof and active matrix/organic light emitting display are described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Please refer to Fig. 3, it is the structural representation of the image element circuit of the embodiment of the present invention.As shown in Figure 3, described image element circuit 20 comprises: Organic Light Emitting Diode OLED, is connected between the first power supply and second source; The first film transistor M1, be connected between the first power supply and Section Point N2, its grid is connected to launch-control line EMn; Second thin film transistor (TFT) M2, be connected between the 3rd node N3 and the anode of Organic Light Emitting Diode OLED, its grid is connected to launch-control line EMn; 3rd thin film transistor (TFT) M3, be connected between Section Point N2 and the 3rd node N3, its grid receives first node N1; 4th thin film transistor (TFT) M4, be connected between first node N1 and the 3rd node N3, its grid is connected to three scan line Sn+1; 5th thin film transistor (TFT) M5, be connected between first node N1 and the 3rd power supply, its grid is connected to the second sweep trace Sn; 6th thin film transistor (TFT) M6, be connected between data line and Section Point N2, its grid is connected to three scan line Sn+1; 7th thin film transistor (TFT) M7, is connected between the first power supply and first node N1, and its grid is connected to the first sweep trace Sn-1; Memory capacitance Cst, is connected between the first power supply and first node N1.
Concrete, described image element circuit 20 and external power source, comprise the first power supply, and second source is connected with the 3rd power supply.Wherein, described first power supply and second source are used as the driving power of Organic Light Emitting Diode OLED.Described first power supply is high potential pixel power, for providing the first supply voltage VDD.Described second source is low potential pixel power, for providing second source voltage VSS.3rd power supply is generally low level voltage source, for providing reference voltage Vref.
In the present embodiment, the magnitude of voltage of described reference voltage Vref and the magnitude of voltage of described second source voltage VSS close.
Please continue to refer to Fig. 3, described image element circuit 20 is a kind of 7T1C type circuit structures, comprise 7 thin film transistor (TFT)s and 1 electric capacity, 7 thin film transistor (TFT)s are P-type TFT, the grid of the 3rd thin film transistor (TFT) M3, the drain electrode of the 4th thin film transistor (TFT) M4, the drain electrode of the 5th thin film transistor (TFT) M5, the source electrode of the 7th thin film transistor (TFT) M7 and the infrabasal plate of memory capacitance Cst are all connected to first node N1, the drain electrode of the 3rd thin film transistor (TFT) M3, the drain electrode of the first film transistor M1 and the source electrode of the 6th thin film transistor (TFT) M6 are all connected to Section Point N2, second thin film transistor (TFT) M2, the source electrode of the 3rd thin film transistor (TFT) M3 and the 4th thin film transistor (TFT) M4 is all connected to the 3rd node N3, the grid of described 7th thin film transistor (TFT) M7 is connected with the first sweep trace Sn-1, the grid of described 5th thin film transistor (TFT) M5 is connected with the second sweep trace Sn, described 4th thin film transistor (TFT) M4 is all connected with three scan line Sn+1 with the 6th thin film transistor (TFT) M6, described the first film transistor M1 is all connected with launch-control line EMn with the second thin film transistor (TFT) M2.
As shown in Figure 3, described image element circuit 20 controls the 7th thin film transistor (TFT) M7 by the first sweep trace Sn-1, the 5th thin film transistor (TFT) M5 is controlled by the second sweep trace Sn, control the 4th thin film transistor (TFT) M4 and the 6th thin film transistor (TFT) M6 by three scan line Sn+1, control the first film transistor M1 and the second thin film transistor (TFT) M2 by launch-control line EMn.
When the sweep signal that the first sweep trace Sn-1 provides transits to low level, the 7th thin film transistor (TFT) M7 conducting.When the sweep signal that the second sweep trace Sn provides transits to low level, the 5th thin film transistor (TFT) M5 conducting, the reference voltage Vref that the 3rd power supply provides is applied to first node N1 via the 5th thin film transistor (TFT) M5.When the sweep signal that three scan line Sn+1 provides transits to low level, 4th thin film transistor (TFT) M4 and the equal conducting of the 6th thin film transistor (TFT) M6, grid and the drain electrode of the 3rd thin film transistor (TFT) M3 realize short circuit by the 4th thin film transistor (TFT) M4, and the data voltage Vdata that data line provides simultaneously writes Section Point N2 via the 6th thin film transistor (TFT) M6.When the control signal that launch-control line EMn provides transits to low level, the first film transistor M1 and the equal conducting of the second thin film transistor (TFT) M2, drive current flows to second source along the first power supply through the path of the first film transistor M1, the 3rd thin film transistor (TFT) M3, the second thin film transistor (TFT) M2 and Organic Light Emitting Diode OLED, causes Organic Light Emitting Diode OLED to light luminescence.
In the present embodiment, 3rd thin film transistor (TFT) M3 is as the driving transistors of pixel, voltage corresponding to first node N1 controls the drive current being provided to described Organic Light Emitting Diode OLED, described Organic Light Emitting Diode OLED sends the light of corresponding brightness according to described drive current, thus display image.Wherein, the data voltage Vdata that the drive current that 3rd thin film transistor (TFT) M3 is provided to described Organic Light Emitting Diode OLED is provided by data line and the first supply voltage VDD that the first power supply provides determines, and the threshold voltage of the second source voltage VSS provided with second source, reference voltage Vref that the 3rd power supply provides and the 3rd thin film transistor (TFT) M3 has nothing to do.Therefore, adopt described image element circuit 20 can avoid the brightness disproportionation caused by the threshold voltage deviation of thin film transistor (TFT), and then improve the display quality of display.
Described image element circuit 20 not only has threshold voltage compensation function, and the electric current flowing through the 3rd thin film transistor (TFT) M3 can be eliminated before threshold voltage compensation, thus prevent the 3rd thin film transistor (TFT) M3 from occurring lag-effect, avoid causing response speed slack-off because of lag-effect.
Accordingly, present invention also offers a kind of driving method of image element circuit.Incorporated by reference to reference to figure 3 and Fig. 4, the driving method of described image element circuit comprises:
Scan period comprises first time period t1, the second time period t 2, the 3rd time period t 3 and the 4th time period t 4; Wherein,
At first time period t1, the sweep signal that first sweep trace Sn-1 provides becomes low level from high level, the sweep signal that second sweep trace Sn and three scan line Sn+1 provides is high level, the control signal that launch-control line EMn provides is low level, open the first film transistor M1, the second thin film transistor (TFT) M2 and the 7th thin film transistor (TFT) M7, to eliminate the electric current flowing through the 3rd thin film transistor (TFT) M3;
In the second time period t 2, the sweep signal that first sweep trace Sn-1 and three scan line Sn+1 provides and the control signal that launch-control line EMn provides are high level, the sweep signal that second sweep trace Sn provides becomes low level from high level, open the 5th thin film transistor (TFT) M5, by the 3rd power supply, initialization is carried out to described first node N1.
In the 3rd time period t 3, the sweep signal that first sweep trace Sn-1 and the second sweep trace Sn provides and the control signal that launch-control line EMn provides are high level, the sweep signal that three scan line Sn+1 provides becomes low level from high level, open the 4th thin film transistor (TFT) M4 and the 6th thin film transistor (TFT) M6, the threshold voltage of the 3rd thin film transistor (TFT) M3 is compensated;
In the 4th time period t 4, the sweep signal that first sweep trace Sn-1 and the second sweep trace Sn provides is high level, the sweep signal that three scan line Sn+1 provides becomes high level from low level, the control signal that launch-control line EMn provides becomes low level from high level, after closedown the 4th thin film transistor (TFT) M4 and the 6th thin film transistor (TFT) M6, open the first film transistor M1 and the second thin film transistor (TFT) M2, the 3rd thin film transistor (TFT) M3 output current also drives described Organic Light Emitting Diode OLED luminous.
Concrete, at first time period t1, the sweep signal provided due to the first sweep trace Sn-1 becomes low level from high level, the 7th thin film transistor (TFT) M7 controlled by the first sweep trace Sn-1 becomes conducting from cut-off, the control signal simultaneously provided due to launch-control line EMn is low level, the first film transistor M1 and the second thin film transistor (TFT) M2 is in conducting state, therefore no longer includes electric current and flows through the 3rd thin film transistor (TFT) M3.By eliminating the electric current flowing through the 3rd thin film transistor (TFT) M3, can prevent the 3rd thin film transistor (TFT) M3 from occurring lag-effect, thus improving the response time, improve response speed.
In the second time period t 2, the sweep signal provided due to the second sweep trace Sn becomes low level from high level, the 5th thin film transistor (TFT) M5 controlled by the second sweep trace Sn becomes conducting from cut-off, the reference voltage Vref that 3rd power supply provides is provided to first node N1 via the 5th thin film transistor (TFT) M5 and carries out initialization to first node N1, and after initialization, the voltage of described first node N1 equals reference voltage Vref.Because reference voltage Vref is close to second source voltage VSS, therefore next phase data can be written into.Now, the grid voltage of the 3rd thin film transistor (TFT) M3 equals reference voltage Vref.
In the 3rd time period t 3, the sweep signal provided due to three scan line Sn+1 becomes low level from high level, the 4th thin film transistor (TFT) M4 controlled by three scan line Sn+1 and the 6th thin film transistor (TFT) M6 becomes conducting by cut-off, make the grid of the 3rd thin film transistor (TFT) M3 due to the 4th thin film transistor (TFT) M4 conducting and drain by short circuit, simultaneously due to the 6th thin film transistor (TFT) M6 conducting, the data voltage Vdata that data line provides is provided to Section Point N2 via the 6th thin film transistor (TFT) M6, therefore the voltage of first node N1, namely the infrabasal plate voltage of memory capacitance Cst is Vdata-|Vth|.Wherein, Vth is the threshold voltage of the 3rd thin film transistor (TFT) M3.In other words, in the process the threshold voltage of the 3rd thin film transistor (TFT) M3 is stored in memory capacitance Cst, the threshold voltage of the 3rd thin film transistor (TFT) M3 is compensated.
In the 4th time period t 4, the sweep signal provided due to three scan line Sn+1 becomes high level from low level, the 4th thin film transistor (TFT) M4 controlled by three scan line Sn+1 and the 6th thin film transistor (TFT) M6 all has conducting to become cut-off, and the data voltage Vdata that data line provides stops write.Afterwards, the control signal provided due to launch-control line EMn becomes low level from high level, the first film transistor M1 controlled by launch-control line EMn and the second thin film transistor (TFT) M2 becomes conducting by cut-off, the drive current that 3rd thin film transistor (TFT) M3 exports flows to second source along the first power supply through the path of the first film transistor M1, the 3rd thin film transistor (TFT) M3, the second thin film transistor (TFT) M2 and Organic Light Emitting Diode OLED, causes Organic Light Emitting Diode OLED to light luminescence.
Due to the first film transistor M1 conducting, the first supply voltage VDD is provided to Section Point N2 by the first film transistor M1.Now, the voltage of Section Point N2 is the voltage of the first supply voltage VDD, first node N1 is Vdata-|Vth|.Grid voltage due to the 3rd thin film transistor (TFT) M3 equals the voltage of first node N1, i.e. Vdata-|Vth|, and the source voltage of the 3rd thin film transistor (TFT) M3 equals the voltage of Section Point N2, i.e. VDD.Therefore, the computing formula of the gate source voltage Vgs (voltage difference namely between the grid of described 3rd thin film transistor (TFT) M3 and source electrode) of the 3rd thin film transistor (TFT) M3 is:
Vgs=VDD-(Vdata-|Vth|) formula 1;
And the computing formula flowing through the electric current I on of described Organic Light Emitting Diode OLED is:
Ion=K × (Vgs-|Vth|)
2formula 2;
Wherein, K is that the electron mobility of thin film transistor (TFT), breadth length ratio, unit-area capacitance three are long-pending.
Can obtain according to formula 1 and formula 2:
Ion=K × (VDD-Vdata)
2formula 3;
Expression formula based on formula 3 is known, the electric current I on flowing through described Organic Light Emitting Diode OLED is only relevant with the first supply voltage VDD and constant K with data voltage Vdata, and all it doesn't matter with the threshold voltage vt h of second source voltage VSS, reference voltage Vref and the 3rd thin film transistor (TFT) M3.Even if deviation appears in the threshold voltage vt h of the 3rd thin film transistor (TFT) M3, also can not the electric current I on flowing through described Organic Light Emitting Diode OLED be impacted.Therefore, adopt described image element circuit 20 and driving method thereof can realize the compensation of threshold voltage, avoid causing brightness disproportionation phenomenon because of threshold voltage deviation.
Described image element circuit 20, mainly through the work of above four time periods, not only can realize the compensation of threshold voltage, and can prevent driving transistors from occurring lag-effect, thus the display problem that elimination lag-effect is brought.
Please continue to refer to Fig. 3, the scan period also comprises the 5th time period t 5 and the 6th time period t 6.Wherein, the 5th time period t 5 is arranged between first time period t1 and the second time period t 2, and the 6th time period t 6 is arranged between the second time period t 2 and the 3rd time period t 3.
In the 5th time period t 5, the sweep signal that first sweep trace Sn-1 provides keeps low level, the sweep signal that second sweep trace Sn and three scan line Sn+1 provides keeps high level, the control signal that launch-control line EMn provides becomes high level from low level, the control signal provided due to launch-control line EMn becomes high level from low level, the first film transistor M1 controlled by launch-control line EMn and the second thin film transistor (TFT) M2 becomes cut-off by conducting, and therefore described Organic Light Emitting Diode OLED stops luminous.
In the 6th time period t 6, the sweep signal that first sweep trace Sn-1 and three scan line Sn+1 provides and the control signal that launch-control line EMn provides all keep high level, the sweep signal that second sweep trace Sn provides becomes high level from low level, the sweep signal provided due to the second sweep trace Sn becomes high level from low level, the 5th thin film transistor (TFT) M5 controlled by the second sweep trace Sn becomes cut-off from conducting, because the 5th thin film transistor (TFT) M5 ends, 3rd power supply cannot provide reference voltage Vref to first node N1 via the 5th thin film transistor (TFT) M5, therefore the initialization to described first node N1 is stopped.
Repeat the course of work of first time period t1, the 5th time period t 5, second time period t 2, the 6th time period t 6, the 3rd time period t 3 and the 4th time period t 4, complete image display function.
Accordingly, present invention also offers a kind of active array organic light emitting display device.Please refer to Fig. 5, as shown in Figure 5, described active array organic light emitting display device comprises: display unit 100, scanner driver 200 and data driver 300; Described display unit 100 comprises multiple pixel 110, described multiple pixel 110 is arranged in the intersection region of sweep trace S1 to Sn and data line D1 to Dm in the matrix form, each pixel 110 is connected with sweep trace and data line, and described pixel 110 comprises image element circuit 20 as above.
Concrete, described display unit 100 receive provide from outside from the first power supply, second source and the 3rd power supply.Wherein, described first power supply is high potential pixel power, for providing the first supply voltage VDD.Described second source is low potential pixel power, for providing second source voltage VSS.3rd power supply is generally low level voltage source, for providing reference voltage Vref.
As shown in Figure 5, described display unit 100 comprises multiple pixel 110, and the array distribution of described multiple pixels 110 in m × n, wherein, m is the columns of pixel 110, and n is the line number of pixel 110, m >=1, n >=1.Each pixel 110 is connected to sweep trace, launch-control line EMn and data line (described data line is connected to a row pixel 110 at the place of pixel 110 own).Such as, the pixel 110 being positioned at the i-th row and jth row is connected to the i-th sweep trace Si, the i-th launch-control line EMi and jth data line Dj.
Wherein, sweep trace and launch-control line are all connected with scanner driver 200, and described scanner driver 200 results from outside and provides the corresponding sweep signal of the scan control signal of (such as, providing from timing control unit) and control signal.The sweep signal that described scanning monitor 200 produces sequentially is supplied to pixel 110 respectively by sweep trace S1 to Sn, and the control signal that described scanning monitor 200 produces sequentially is supplied to pixel 110 respectively by launch-control line EM1 to EMn.Data line is all connected with data driver 300, and described data driver 300 produces provides the data of (such as, providing from timing control unit) and the corresponding data-signal of data controlling signal with outside.The data-signal that described data driver 300 produces synchronously is supplied to pixel 110 by data line D1 to Dm with sweep signal.
Incorporated by reference to reference to figure 4 and Fig. 5, during first time period t1, improve the response time of pixel 110; During the second time period t 2, pixel 110 is initialised; During the 3rd time period t 3, described pixel 110 accepts the data-signal provided from data line, carries out the compensation of threshold voltage simultaneously; During the 4th time period t 4, after data-signal stops writing, pixel 110 transmitting has with the light of data-signal corresponding bright to show image.
To sum up, in image element circuit provided by the invention and driving method and active matrix/organic light emitting display thereof, by eliminating the electric current flowing through the 3rd thin film transistor (TFT) M3 before threshold voltage compensation, prevent the 3rd thin film transistor (TFT) M3 from occurring lag-effect, thus raising response speed, simultaneously, the data voltage that the electric current that described 3rd thin film transistor (TFT) M3 exports is provided by data line and the first supply voltage VDD that the first power supply provides determine, and have nothing to do with the threshold voltage of described 3rd thin film transistor (TFT) M3, therefore, it is possible to avoid the brightness disproportionation caused by threshold voltage deviation, thus, adopt the active square organic light emitting display of described image element circuit and driving method thereof can avoid the display problem caused by the threshold voltage deviation of driving transistors and lag-effect simultaneously, there is higher brightness uniformity and response speed faster.
Foregoing description is only the description to present pre-ferred embodiments, any restriction not to the scope of the invention, and any change that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, modification, all belong to the protection domain of claims.
Claims (9)
1. an image element circuit, is characterized in that, comprising:
Organic Light Emitting Diode, is connected between the first power supply and second source;
The first film transistor, be connected between the first power supply and Section Point, its grid is connected to launch-control line;
Second thin film transistor (TFT), be connected between the 3rd node and the anode of described Organic Light Emitting Diode, its grid is connected to launch-control line;
3rd thin film transistor (TFT), be connected between Section Point and the 3rd node, its grid receives first node;
4th thin film transistor (TFT), be connected between first node and the 3rd node, its grid is connected to three scan line;
5th thin film transistor (TFT), be connected between first node and the 3rd power supply, its grid is connected to the second sweep trace;
6th thin film transistor (TFT), is connected between data line and Section Point, and its grid is connected to three scan line;
7th thin film transistor (TFT), be connected between the first power supply and first node, its grid is connected to the first sweep trace; And
Memory capacitance, is connected between the first power supply and first node.
2. image element circuit as claimed in claim 1, is characterized in that, described first power supply and second source are used as the driving power of described Organic Light Emitting Diode, and described 3rd power supply is used for providing reference voltage.
3. image element circuit as claimed in claim 1, it is characterized in that, described the first film transistor is P-type TFT to the 7th thin film transistor (TFT).
4. image element circuit as claimed in claim 1, it is characterized in that, described 3rd thin film transistor (TFT) is as driving transistors, the first supply voltage that the data voltage that the electric current that described 3rd thin film transistor (TFT) is provided to described Organic Light Emitting Diode is provided by described data line and the first power supply provide determines, and the threshold voltage of the second source voltage provided with described second source, reference voltage that the 3rd power supply provides and the 3rd thin film transistor (TFT) has nothing to do.
5. image element circuit as claimed in claim 1, it is characterized in that, described 7th thin film transistor (TFT) is controlled by the first sweep trace, described 4th thin film transistor (TFT) and the 6th thin film transistor (TFT) are all controlled by three scan line, and described the first film transistor and the second thin film transistor (TFT) are all by emission control line traffic control.
6. a driving method for the image element circuit according to any one of claim 1 to 5, is characterized in that, the scan period comprises first time period, the second time period, the 3rd time period and the 4th time period, wherein,
In first time period, the sweep signal that first sweep trace provides becomes low level from high level, the sweep signal that second sweep trace and three scan line provide is high level, the control signal that launch-control line provides is low level, open the first film transistor, the second thin film transistor (TFT) and the 7th thin film transistor (TFT), eliminate the electric current flowing through the 3rd thin film transistor (TFT);
In the second time period, the sweep signal that first sweep trace and three scan line provide and the control signal that launch-control line provides are high level, the sweep signal that second sweep trace provides becomes low level from high level, open the 5th thin film transistor (TFT), by the 3rd power supply, initialization is carried out to described first node;
In the 3rd time period, the sweep signal that first sweep trace and the second sweep trace provide and the control signal that launch-control line provides are high level, the sweep signal that three scan line provides becomes low level from high level, open the 4th thin film transistor (TFT) and the 6th thin film transistor (TFT), the threshold voltage of the 3rd thin film transistor (TFT) is compensated;
In the 4th time period, the sweep signal that first sweep trace and the second sweep trace provide is high level, the sweep signal that three scan line provides becomes high level from low level, the control signal that launch-control line provides becomes low level from high level, after closedown the 4th thin film transistor (TFT) and the 6th thin film transistor (TFT), open the first film transistor and the second thin film transistor (TFT), the 3rd thin film transistor (TFT) output current also drives described organic light-emitting diode.
7. the driving method of image element circuit as claimed in claim 6, it is characterized in that, the described scan period also comprised for the 5th time period, and described 5th time period is arranged between first time period and the second time period;
In the 5th time period, the sweep signal that first sweep trace provides keeps low level, the sweep signal that second sweep trace and three scan line provide all keeps high level, and the control signal that launch-control line provides becomes high level from low level, and described Organic Light Emitting Diode stops luminous.
8. the driving method of image element circuit as claimed in claim 6, it is characterized in that, the described scan period also comprised for the 6th time period; Described 6th time period is arranged between the second time period and the 3rd time period;
In the 6th time period, the sweep signal that first sweep trace and three scan line provide and the control signal that launch-control line provides all keep high level, the sweep signal that second sweep trace provides becomes high level from low level, closes the 5th thin film transistor (TFT), stops the initialization to first node.
9. an active matrix/organic light emitting display, is characterized in that, comprising: display unit, scanner driver and data driver; Described display unit comprises multiple pixel, described multiple pixel is arranged in the intersection region of sweep trace and data line in the matrix form, each pixel is connected with sweep trace and data line, and described pixel comprises the image element circuit as described on any one of claim 1 to 5.
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