CN104466672A - Laser device for modulating output light based on semiconductor laser device array - Google Patents
Laser device for modulating output light based on semiconductor laser device array Download PDFInfo
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- CN104466672A CN104466672A CN201410837009.8A CN201410837009A CN104466672A CN 104466672 A CN104466672 A CN 104466672A CN 201410837009 A CN201410837009 A CN 201410837009A CN 104466672 A CN104466672 A CN 104466672A
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Abstract
A laser device for modulating output light based on a semiconductor laser device array comprises the semiconductor laser device array, a coupling lens group located on an output light path of the semiconductor laser device array, a modulating device located behind the coupling lens group and arranged on the output light path of the semiconductor laser device array, a diffraction grating located behind the modulating device and arranged on the output light path of the semiconductor laser device array, and an output mirror located on the light path refracted by the diffraction grating, wherein the diffraction grating and the output light path of the semiconductor laser device array form a predetermined included angle, a Q-switching element or a frequency doubling crystal is arranged in a spectrum beam combination cavity, in-cavity Q-switching or in-cavity frequency doubling is achieved, light beam quality of the semiconductor laser device array is optimized, the Q-switching or frequency doubling conversion efficiency is improved, and the laser device for modulating the output light based on the semiconductor laser device array is simple in structure and high in stability.
Description
Technical field
The present invention relates to laser technology field, what be specially a kind of based semiconductor laser array carries out modulated laser to output light, can carry out tune Q or frequency multiplication to output light.
Background technology
Due to this body structure of semiconductor laser array, overall beam quality is not high, and spatial brightness is not high, limits semiconductor laser in very many-sided application.Semiconductor laser exports and mostly is continuous wave, and the semiconductor laser power output that small part pulse exports is very low, can not meet application demand.
Q-regulating technique is again Q switching technology, is to be launched in the extremely narrow pulse of width by the continuous laser energy compression generally exported, thus makes the peak power of light source can improve a kind of technology of several order of magnitude, can obtain high-peak power, narrow spaces pulse laser.Realized by Q switched element.
Frequency doubling technology refers to, utilizes the nonlinear effect of nonlinear crystal under light laser effect, makes frequency be that the laser of ω is by becoming the frequency doubled light that frequency is 2 ω, 3 ω or N ω (N is integer) after crystal.
Spectrum beam combination (Christian Wirth, 36 (16), 3118-3120 (2011) OpticsLetters) be one of method of the beam quality improving semiconductor laser array, semiconductor laser array is positioned in an exocoel be made up of conversion transmission lens, diffraction grating and output coupling mirror, the wavelength of each luminescence unit of array is locked by external cavity feedback, the light beam of each luminescence unit of array is overlapping on output coupling mirror, and exports by identical direction.Ideally, array output beam quality is the beam quality of single luminescence unit in the direction of beam combination, and power output is pressed array element number and added up.
Summary of the invention
The object of the invention is to, a kind of laser modulated output light of based semiconductor laser array is provided, it Q switched element or frequency-doubling crystal is placed in spectrum beam combination chamber, realize adjusting Q or intracavity frequency doubling in chamber, optimize the beam quality of semiconductor laser array, improve the transformation efficiency adjusting Q or frequency multiplication, structure is simple, and stability is high.
The invention provides a kind of laser that output light is modulated of based semiconductor laser array, comprising:
Semiconductor laser array;
One coupled lens group, this coupled lens group is positioned on the output light path of semiconductor laser array;
One modulating device, after this modulating device is positioned at coupled lens group, is positioned on the output light path of semiconductor laser array;
One diffraction grating, after this diffraction grating is positioned at modulating device, is positioned on the output light path of semiconductor laser array, and this diffraction grating becomes a predetermined angle with semiconductor laser array output light path;
One outgoing mirror, this outgoing mirror is positioned in the light path of diffraction grating refraction.
The invention has the beneficial effects as follows, it combines spectrum beam combination, Q-regulating technique and frequency doubling technology, the laser sent by direct noise spectra of semiconductor lasers array carries out tune Q or double-frequency laser, obtains pulse laser or double-frequency laser, provides a kind of laser modulated output light.Q switched element or frequency multiplication element are placed in semiconductor laser array rear facet and outgoing mirror forms in resonant cavity, noise spectra of semiconductor lasers array carries out tune Q or frequency multiplication, the present invention have simple effectively, be easy to the advantage that regulates, working stability is reliable, practical, applied widely.
Accompanying drawing explanation
For further illustrating technology contents of the present invention, below in conjunction with embodiment and accompanying drawing the present invention will be further described as after, wherein:
Fig. 1 is structural representation of the present invention.
Fig. 2 is the structural representation of coupled lens group 2 in Fig. 1.
Embodiment
Refer to shown in Fig. 1 and Fig. 2, the invention provides a kind of laser that output light is modulated of based semiconductor laser array, comprising:
Semiconductor laser array 1, the output wavelength of this wherein semiconductor laser array 1 is 100nm-10 μm; Described semiconductor laser array 1 is as LASER Light Source, and the rear facet of described semiconductor laser array 1 plates anti-reflection film.；
One coupled lens group 2, this coupled lens group 2 is positioned on the output light path of semiconductor laser array 1, this coupled lens group 2 comprises: the fast axis collimation mirror 21 of sequential, slow axis collimating mirror 22, condenser lens 23, the laser that this coupled lens group 2 noise spectra of semiconductor lasers array 1 sends converges, on the diffraction grating 4 chatted after its focus point is positioned at;
One modulating device 3, after this modulating device 3 is positioned at coupled lens group 2, is positioned on the output light path of semiconductor laser array 1, and this modulating device 3 is Q switched element or frequency multiplication element, this Q switched element is actively Q-switched element or passive Q-adjusted element, the working method of this Q switched element 3 is electric-optically Q-switched, acousto-optic Q modulation, saturable absorption adjusts Q or mechanical rotating mirror to adjust Q, this frequency multiplication element effect carries out N frequency translation doubly to fundamental frequency light, N is integer, the material of this frequency multiplication element is ammonium dihydrogen phosphate, potassium dihydrogen phosphate, potassium dideuterium phosphate, cesium dideuterium arsenate, cesium dihydrogen arsenate (CDA), lithium niobate, barium sodium niobate, potassium niobate or periodic polarized lithium niobate, described Q switched element effect is that the continuous laser energy compression of output is launched in the extremely narrow pulse of width, thus make the peak power of light source can improve several order of magnitude, high-peak power can be obtained, narrow spaces pulse laser, described passive Q-adjusted element is saturable absorber or semiconductor saturable absorber mirror, described saturable absorber is Cr
4+: YAG, Co:Spinel or V:YAG,
One diffraction grating 4, after this diffraction grating 4 is positioned at modulating device 3, be positioned on the output light path of semiconductor laser array 1, this diffraction grating 4 becomes this diffraction grating 4 of a predetermined angle to be balzed grating, with semiconductor laser array 1 output light path, effect is the output spectrum of locked laser diode array 1, by the outgoing in the same direction after optical grating diffraction of the laser beam of above-mentioned different angles incidence, this diffraction grating 4 adopts transmission-type grating or reflective gratings.Manufacture method can adopt ruling grating and holographic grating;
One outgoing mirror 5, this outgoing mirror 5 is positioned in the light path of diffraction grating 4 refraction, and the optical maser wavelength that described outgoing mirror 5 noise spectra of semiconductor lasers array 1 sends has reflection function, and its reflectivity is 0.0001%-99.9999%.
Described semiconductor laser array 1 and diffraction grating 4 lay respectively on the focal plane, front and back of coupled lens group 2.
The laser that output light is modulated of a kind of based semiconductor laser array provided by the invention, it Q switched element or frequency-doubling crystal is placed in spectrum beam combination chamber, realize adjusting Q or intracavity frequency doubling in chamber, optimize the beam quality of semiconductor laser array, improve the transformation efficiency adjusting Q or frequency multiplication, structure is simple, and stability is high.
Working method of the present invention is:
Refer to shown in Fig. 1 and Fig. 2, the rear facet of semiconductor laser array 1 is coated with anti-reflection film, and the exocoel of semiconductor laser array 1 is made up of the front facet of its semiconductor laser array 1, coupled lens group 2, modulating device 3, diffraction grating 4, outgoing mirror 5.
Semiconductor laser array 1 sends laser, irradiates on diffraction grating 4 through coupled lens group 2 and modulating device 3, and on laser array 1, each luminescence unit of diverse location incides outgoing mirror 5 with different angles.Diffraction grating 4 effect realizes spectrum beam combination, by the outgoing in the same direction after optical grating diffraction of the laser beam of above-mentioned different angles incidence.During Choice and design diffraction grating 4, make it maximum to certain first-order diffraction efficiency of laser array 1, utilize this first-order diffraction efficiency to carry out spectrum beam combination.
Then the laser that sends of semiconductor laser array 1 is made up of in laser oscillation cavity coupled lens group 2, modulating device 3, diffraction grating 4, outgoing mirror 5 and repeatedly turns back, modulating device works in chamber, make continuous wave become pulse laser export (adjusting Q function) or make fundamental frequency light become frequency doubled light (double frequency function), last outgoing mirror 5 exports the laser after modulation.
Embodiment 1:
Consult shown in Fig. 1 and Fig. 2, the present embodiment relates to a kind of laser modulated output light of based semiconductor laser array, carries out tune Q, the pulse laser after output Q-switched to laser.
Semiconductor laser array 1: as LASER Light Source, launches 976nm wavelength, rear facet reflectivity >=95%, front facet plating anti-reflection film (reflectivity≤0.5%).Semiconductor laser array 1 has 19 luminescence units, and fill factor, curve factor is 20%, and luminescence unit bar is wide is 100 μm, and space periodic is 500 μm, and the fast and slow axis angle of divergence is 63 ° × 8 °.
Coupled lens group 2: sequentially comprise fast axis collimation mirror 21, slow axis collimating mirror 22 and condenser lens 23 in coupled lens group 2.Semiconductor laser array 1 and diffraction grating 4 lay respectively on the focal plane, front and back of coupled lens group, the effective focal length f ≈ 240mm of coupled lens group 2.The laser that noise spectra of semiconductor lasers array 1 sends converges, and its focus point is positioned on diffraction grating 4.
Modulating device 3 is Q switched element, adopts passive Q-adjusted crystal: Cr
4+: YAG.
Diffraction grating 4 is balzed grating, and effect realizes spectrum beam combination, by the outgoing in the same direction after optical grating diffraction of the laser beam of above-mentioned different angles incidence.The one-level of diffraction grating, secondary or three order diffraction efficiency can be utilized.
The optical maser wavelength I that outgoing mirror 5 noise spectra of semiconductor lasers array sends has certain reflectivity (reflectivity 10%).
Semiconductor laser array 1 sends continuous wave laser, irradiates on diffraction grating 4 through coupled lens group 2 and modulating device 3, and on laser array 1, each luminescence unit of diverse location incides diffraction grating 4 with different angles.Diffraction grating 4 effect realizes spectrum beam combination, by the outgoing in the same direction after optical grating diffraction of the laser beam of above-mentioned different angles incidence.During Choice and design grating, make it maximum to the first-order diffraction efficiency of laser array 1, utilize its first-order diffraction efficiency to carry out spectrum beam combination.
Then the continuous wave laser that sends of semiconductor laser array 1 is made up of in laser oscillation cavity coupled lens group 2, modulating device 3, diffraction grating 4, outgoing mirror 5 and repeatedly turns back, adjusting Q crystal works in chamber, make continuous wave become pulse laser to export, last outgoing mirror 5 exports the pulse laser after modulation.
Embodiment 2:
Consult shown in Fig. 1 and Fig. 2, the present embodiment relates to the laser modulated output light of based semiconductor laser array, has carried out frequency multiplication, export double-frequency laser to optical maser wavelength.
Semiconductor laser array 1: as LASER Light Source, launches 976nm wavelength, rear facet reflectivity >=95%, front facet plating anti-reflection film (reflectivity≤0.5%).Semiconductor laser array 1 has 19 luminescence units, and fill factor, curve factor is 20%, and luminescence unit bar is wide is 100 μm, and space periodic is 500 μm, and the fast and slow axis angle of divergence is 63 ° × 8 °.
Coupled lens group 2: sequentially comprise fast axis collimation mirror 21, slow axis collimating mirror 22 and condenser lens 23 in coupled lens group 2.Semiconductor laser array 1 and diffraction grating 4 lay respectively on the focal plane, front and back of coupled lens group 2, the effective focal length f ≈ 240mm of coupled lens group 2.The laser that noise spectra of semiconductor lasers array 1 sends converges, and its focus point is positioned on diffraction grating 4.
Modulating device 3 is frequency multiplication element, adopts two frequency-doubling crystals: LBO.The high transmittance film of plating 976nm and 488nm.
Diffraction grating 4 is balzed grating, and effect realizes spectrum beam combination, by the outgoing in the same direction after optical grating diffraction of the laser beam of above-mentioned different angles incidence.The one-level of diffraction grating, secondary or three order diffraction efficiency can be utilized.
The optical maser wavelength I that outgoing mirror 5 noise spectra of semiconductor lasers array 1 sends has certain reflectivity (reflectivity 10%).
Semiconductor laser array 1 sends laser, irradiates on diffraction grating 4 through coupled lens group 2 and modulating device 3, and on semiconductor laser array 1, each luminescence unit of diverse location incides diffraction grating 4 with different angles.Diffraction grating effect realizes spectrum beam combination, by the outgoing in the same direction after optical grating diffraction of the laser beam of above-mentioned different angles incidence.During Choice and design grating, make it maximum to the first-order diffraction efficiency of laser array 1, utilize its first-order diffraction efficiency to carry out spectrum beam combination.
Then the laser that sends of semiconductor laser array 1 is made up of in laser oscillation cavity coupled lens group 2, modulating device 3, diffraction grating 4, outgoing mirror 5 and repeatedly turns back, frequency-doubling crystal works in chamber, make laser fundamental frequency become double-frequency laser to export, last outgoing mirror 5 exports the double-frequency laser after modulation.
Claims (10)
1. the laser modulated output light of based semiconductor laser array, comprising:
Semiconductor laser array;
One coupled lens group, this coupled lens group is positioned on the output light path of semiconductor laser array;
One modulating device, after this modulating device is positioned at coupled lens group, is positioned on the output light path of semiconductor laser array;
One diffraction grating, after this diffraction grating is positioned at modulating device, is positioned on the output light path of semiconductor laser array, and this diffraction grating becomes a predetermined angle with semiconductor laser array output light path;
One outgoing mirror, this outgoing mirror is positioned in the light path of diffraction grating refraction.
2. the laser modulated output light of based semiconductor laser array according to claim 1, wherein the output wavelength of semiconductor laser array is 100nm-10 μm, and working method is that continuous wave exports.
3. the laser that output light is modulated of based semiconductor laser array according to claim 1, wherein coupled lens group comprises: the fast axis collimation mirror of sequential, slow axis collimating mirror and condenser lens, the laser that this coupled lens group noise spectra of semiconductor lasers array sends converges, and its focus point is positioned on diffraction grating.
4. the laser that output light is modulated of based semiconductor laser array according to claim 1, wherein modulating device is Q switched element or frequency multiplication element; This Q switched element is actively Q-switched element or passive Q-adjusted element, and the working method of this Q switched element 3 is electric-optically Q-switched, acousto-optic Q modulation, saturable absorption tune Q or mechanical rotating mirror tune Q; This frequency multiplication element effect carries out N frequency translation doubly to fundamental frequency light, N is integer, and the material of this frequency multiplication element is ammonium dihydrogen phosphate, potassium dihydrogen phosphate, potassium dideuterium phosphate, cesium dideuterium arsenate, cesium dihydrogen arsenate (CDA), lithium niobate, barium sodium niobate, potassium niobate or periodic polarized lithium niobate.
5. the laser modulated output light of based semiconductor laser array according to claim 4, wherein passive Q-adjusted element is saturable absorber or semiconductor saturable absorber mirror.
6. the laser modulated output light of based semiconductor laser array according to claim 5, wherein saturable absorber is Cr
4+: YAG, Co:Spinel or V:YAG.
7. the laser that output light is modulated of based semiconductor laser array according to claim 1, wherein diffraction grating is balzed grating, effect is the output spectrum of locked laser diode array, by the outgoing in the same direction after optical grating diffraction of the laser beam of above-mentioned different angles incidence.
8. the laser modulated output light of based semiconductor laser array according to claim 7, wherein diffraction grating adopts transmission-type grating or reflective gratings.
9. the laser modulated output light of based semiconductor laser array according to claim 1, the optical maser wavelength that wherein outgoing mirror noise spectra of semiconductor lasers array sends has reflection function, and its reflectivity is 0.0001%-99.9999%.
10. the laser that output light is modulated of based semiconductor laser array according to claim 2, wherein the rear facet plating anti-reflection film of semiconductor laser array.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106772733A (en) * | 2016-12-26 | 2017-05-31 | 南京大学 | Three-dimensional Dirac semimetal diffraction grating |
| CN108063364A (en) * | 2018-01-05 | 2018-05-22 | 南京大学 | Semiconductor exocoel mode-locked laser based on Cadmium arsenide's material |
| CN109560458A (en) * | 2019-02-15 | 2019-04-02 | 上海高意激光技术有限公司 | Semiconductor laser spectrum beam combination frequency doubling device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1710763A (en) * | 2005-07-14 | 2005-12-21 | 中国科学院长春光学精密机械与物理研究所 | Optical pump high-power vertical external cavity emitting laser |
| US20070268941A1 (en) * | 2006-05-16 | 2007-11-22 | Samsung Electronics Co., Ltd. | Vertical external cavity surface emitting laser and method thereof |
| CN102208753A (en) * | 2011-04-27 | 2011-10-05 | 苏州华必大激光有限公司 | External cavity semiconductor laser with multi-wavelength combination |
| CN103887707A (en) * | 2014-04-09 | 2014-06-25 | 北京工业大学 | Semiconductor laser device with high-power and high-beam-quality lasers |
| CN104134930A (en) * | 2014-07-28 | 2014-11-05 | 中国科学院半导体研究所 | External cavity model-locked beam combination device and method for LDA (Laser Diode Array) |
| CN203942144U (en) * | 2014-06-30 | 2014-11-12 | 中国工程物理研究院应用电子学研究所 | A kind ofly improve the device that semiconductor laser spectrum closes light beams quality |
-
2014
- 2014-12-29 CN CN201410837009.8A patent/CN104466672A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1710763A (en) * | 2005-07-14 | 2005-12-21 | 中国科学院长春光学精密机械与物理研究所 | Optical pump high-power vertical external cavity emitting laser |
| US20070268941A1 (en) * | 2006-05-16 | 2007-11-22 | Samsung Electronics Co., Ltd. | Vertical external cavity surface emitting laser and method thereof |
| CN102208753A (en) * | 2011-04-27 | 2011-10-05 | 苏州华必大激光有限公司 | External cavity semiconductor laser with multi-wavelength combination |
| CN103887707A (en) * | 2014-04-09 | 2014-06-25 | 北京工业大学 | Semiconductor laser device with high-power and high-beam-quality lasers |
| CN203942144U (en) * | 2014-06-30 | 2014-11-12 | 中国工程物理研究院应用电子学研究所 | A kind ofly improve the device that semiconductor laser spectrum closes light beams quality |
| CN104134930A (en) * | 2014-07-28 | 2014-11-05 | 中国科学院半导体研究所 | External cavity model-locked beam combination device and method for LDA (Laser Diode Array) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106772733A (en) * | 2016-12-26 | 2017-05-31 | 南京大学 | Three-dimensional Dirac semimetal diffraction grating |
| CN106772733B (en) * | 2016-12-26 | 2019-04-05 | 南京大学 | Three-dimensional dirac semimetal diffraction grating |
| CN108063364A (en) * | 2018-01-05 | 2018-05-22 | 南京大学 | Semiconductor exocoel mode-locked laser based on Cadmium arsenide's material |
| CN108063364B (en) * | 2018-01-05 | 2020-06-26 | 南京大学 | Semiconductor external cavity mode-locked laser based on cadmium arsenide material |
| CN109560458A (en) * | 2019-02-15 | 2019-04-02 | 上海高意激光技术有限公司 | Semiconductor laser spectrum beam combination frequency doubling device |
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Application publication date: 20150325 |