CN104465802A - Metal contact formed on device with gallium arsenide layer and manufacturing method thereof - Google Patents
Metal contact formed on device with gallium arsenide layer and manufacturing method thereof Download PDFInfo
- Publication number
- CN104465802A CN104465802A CN201410670765.6A CN201410670765A CN104465802A CN 104465802 A CN104465802 A CN 104465802A CN 201410670765 A CN201410670765 A CN 201410670765A CN 104465802 A CN104465802 A CN 104465802A
- Authority
- CN
- China
- Prior art keywords
- layer
- palladium
- germanium
- gallium arsenide
- scope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 24
- 239000002184 metal Substances 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 82
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 39
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 25
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910000927 Ge alloy Inorganic materials 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000005253 cladding Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract 15
- 239000011247 coating layer Substances 0.000 abstract 4
- 229910001252 Pd alloy Inorganic materials 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 2
- 238000009833 condensation Methods 0.000 abstract 1
- 230000005494 condensation Effects 0.000 abstract 1
- 238000000137 annealing Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002803 fossil fuel Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention discloses a method for forming a metal contact on a device with a gallium arsenide layer. The method includes the steps that a palladium layer is deposited on the gallium arsenide layer; a germanium layer is deposited on the palladium layer; a metal coating layer is deposited on the germanium layer; the device with the gallium arsenide layer is heated, and a palladium and germanium alloy layer arranged between an absorption layer and the metal coating layer is formed. The palladium and germanium alloy layer is a gradually-changing layer, the part, close to the absorption layer, of the gradually-changing layer comprises palladium with the highest condensation and germanium with the lowest concentration and has the gradient for extending to the metal coating layer, and the part, close to the metal coating layer, of the gradually-changing layer comprises germanium with the highest concentration and palladium with the lowest concentration. According to the preparing method, the metal contact formed on the device with the gallium arsenide layer can be prepared at a low temperature, and therefore the performance of the device can be maintained.
Description
Technical field
What the present invention relates to solar cell has gallium arsenide layer device, and preparation has the method for gallium arsenide layer device.
Background technology
Fossil fuel just exhausts with growing speed, so become more and more obvious to the needs of alternative energy source.The energy being derived from wind, being derived from the sun and being derived from flowing water provides reproducible, the eco-friendly substitute of the fossil fuel to such as coal, oil and natural gas.Due to solar energy almost all easily obtaining Anywhere, so solar energy may become feasible substitute some day on earth.
In order to utilize the energy from the sun, the knot absorb photons of solar cell is to produce electron-hole pair, and these electron-hole pairs are separated by the internal electric field tied to produce voltage, thus are electric energy by light energy conversion.The voltage produced increases by being connected in series solar cell, and electric current increases by being connected in parallel solar cell.Solar cell can be combined on solar panel.Inverter can be coupled to some solar panels so that direct current power is converted to AC power.
But the current high cost of producing solar cell stops solar cell to become main stream relative to the low efficiency levels of contemporary devices, and limits the accommodable application of solar cell.During the manufacturing processes customary with gallium arsenide layer device, hard contact deposits often through gas-phase deposition, and during thermal anneal process, is usually heated to above the temperature of 300 DEG C.These pyroprocesses are owing to consuming time and energy and expensive often excessively.
Therefore, there is there is gallium arsenide layer device and originally manufactured such demand with the method for gallium arsenide layer device with the one-tenth of reduction compared with conventional solar cell the efficiency with raising.
Summary of the invention
The technical problem to be solved in the present invention is: overcome the deficiency in prior art, provides a kind of and has method gallium arsenide layer device being formed hard contact, comprising: depositing palladium layer on gallium arsenide layer; Described palladium layers deposits germanium layer; Plated metal cover layer on described germanium layer; And by described, there is gallium arsenide layer device heats, to form the palladium germanium alloy layer be arranged between described absorbed layer and described metal cladding, wherein, described palladium germanium alloy layer is graded bedding, described graded bedding is comprising the palladium of maximum concentration and the germanium of least concentration near described absorbed layer place, there is the gradient extending to described metal cladding, comprising the germanium of maximum concentration and the palladium of least concentration near described metal cladding place.
Wherein said temperature is in the scope of about 20 DEG C to about 175 DEG C, and the time period within the scope of described heating and continuous about 5 minutes to about 60 minutes.
Wherein said palladium layers has
thickness in scope, and during depositing operation, be deposited at the temperature of described palladium layers within the scope of about 20 DEG C to about 200 DEG C.
Wherein said germanium layer has
thickness in scope, and during depositing operation, be deposited at the temperature of described germanium layer within the scope of about 20 DEG C to about 200 DEG C.
Correspondingly, present invention also offers and be a kind ofly arranged in the hard contact had on gallium arsenide layer device, comprising: palladium germanium alloy layer, it arranges in the devices on gallium arsenide layer; And metal cladding, it is arranged on described palladium germanium alloy layer, wherein, described palladium germanium alloy layer is graded bedding, described graded bedding is comprising the palladium of maximum concentration and the germanium of least concentration near described absorbed layer place, there is the gradient extending to described metal cladding, comprising the germanium of maximum concentration and the palladium of least concentration near described metal cladding place.
Manufacture method of the present invention can be prepared at low temperatures to have on gallium arsenide layer device and forms hard contact, and the performance of device is kept.
Embodiment
The invention provides a kind of simple to operate, be easy to control, cost is low, and products obtained therefrom area is large, conductance is high, the preparation method of the solar cell transparent graphene membrane electrode that light transmittance is high.
Embodiments of the present invention relate generally to the opto-electronic semiconductor module such as with gallium arsenide layer device, and relate more specifically to be arranged in the hard contact had on gallium arsenide layer device such as with gallium arsenide layer device, and relate to the manufacturing process forming such hard contact.
In one embodiment, provide and be a kind ofly arranged in the hard contact had on gallium arsenide layer device such as with gallium arsenide layer device, and this hard contact comprises the palladium germanium alloy layer arranged on gallium arsenide layer in the devices, and be arranged in the metal cladding on palladium germanium alloy layer.Such as, cover layer can comprise the adhesion layer be arranged on palladium germanium alloy layer and the conductive layer be arranged on adhesion layer.In certain embodiments, palladium germanium alloy layer can have
thickness in scope, such as adhesion layer can have
thickness in scope.Conductive layer can have at least
thickness.
In another embodiment, provide and a kind of there is method gallium arsenide layer device being formed hard contact, and the method comprises: depositing palladium layer on gallium arsenide layer in the devices, palladium layers deposits germanium layer, plated metal cover layer on germanium layer, and during annealing process, will there is gallium arsenide layer device heats to the temperature within the scope of about 20 DEG C to about 275 DEG C.Such as, sedimentary cover can be included in deposition of adhesion on germanium layer, and on adhesion layer depositing conducting layer.Palladium layers and germanium layer are formed and are arranged in palladium germanium alloy between absorbed layer and adhesion layer.In certain embodiments, during annealing process, by there is gallium arsenide layer device heats to the temperature within the scope of about 20 DEG C to about 175 DEG C, the time period within the scope of about 5 minutes to about 60 minutes can be continued, such as, from about 100 DEG C to about 150 DEG C; Or the temperature be heated within the scope of about 150 DEG C to about 275 DEG C, and continue the time period at least about 0.5 minute.
Palladium layers can have
thickness in scope, and during depositing operation, can deposit under the temperature within the scope of about 20 DEG C to about 200 DEG C.Germanium layer can have
thickness in scope, and during depositing operation, can deposit under the temperature within the scope of about 20 DEG C to about 200 DEG C.In certain embodiments, adhesion layer comprises titanium or titanium alloy, and has at least
thickness.In other embodiments, conductive layer comprises gold or billon, and has at least
thickness.In other respects, in device, gallium arsenide layer comprises n-type GaAs material usually, and metal contact layer can be deposited on the back side with gallium arsenide layer device.
Claims (5)
1. there is method gallium arsenide layer device being formed hard contact, comprising:
Depositing palladium layer on gallium arsenide layer;
Described palladium layers deposits germanium layer;
Plated metal cover layer on described germanium layer; And
By described, there is gallium arsenide layer device heats, to form the palladium germanium alloy layer be arranged between described absorbed layer and described metal cladding,
Wherein, described palladium germanium alloy layer is graded bedding, described graded bedding, comprising the palladium of maximum concentration and the germanium of least concentration near described absorbed layer place, has the gradient extending to described metal cladding, is comprising the germanium of maximum concentration and the palladium of least concentration near described metal cladding place.
2. the method for claim 1, wherein said temperature is in the scope of about 20 DEG C to about 175 DEG C, and the time period within the scope of described heating and continuous about 5 minutes to about 60 minutes.
3. the method for claim 1, wherein said palladium layers has
thickness in scope, and during depositing operation, be deposited at the temperature of described palladium layers within the scope of about 20 DEG C to about 200 DEG C.
4. the method for claim 1, wherein said germanium layer has
thickness in scope, and during depositing operation, be deposited at the temperature of described germanium layer within the scope of about 20 DEG C to about 200 DEG C.
5. be arranged in the hard contact had on gallium arsenide layer device, comprise:
Palladium germanium alloy layer, it arranges in the devices on gallium arsenide layer; And
Metal cladding, it is arranged on described palladium germanium alloy layer,
Wherein, described palladium germanium alloy layer is graded bedding, described graded bedding, comprising the palladium of maximum concentration and the germanium of least concentration near described absorbed layer place, has the gradient extending to described metal cladding, is comprising the germanium of maximum concentration and the palladium of least concentration near described metal cladding place.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410670765.6A CN104465802A (en) | 2014-11-21 | 2014-11-21 | Metal contact formed on device with gallium arsenide layer and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410670765.6A CN104465802A (en) | 2014-11-21 | 2014-11-21 | Metal contact formed on device with gallium arsenide layer and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104465802A true CN104465802A (en) | 2015-03-25 |
Family
ID=52911544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410670765.6A Pending CN104465802A (en) | 2014-11-21 | 2014-11-21 | Metal contact formed on device with gallium arsenide layer and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104465802A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120104460A1 (en) * | 2010-11-03 | 2012-05-03 | Alta Devices, Inc. | Optoelectronic devices including heterojunction |
| CN102446949A (en) * | 2010-10-04 | 2012-05-09 | 晶元光电股份有限公司 | Light-emitting element having a plurality of contact parts |
| CN102456773A (en) * | 2010-11-03 | 2012-05-16 | 奥塔装置公司 | Metallic contacts for photovoltaic devices and low temperature fabrication processes thereof |
-
2014
- 2014-11-21 CN CN201410670765.6A patent/CN104465802A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102446949A (en) * | 2010-10-04 | 2012-05-09 | 晶元光电股份有限公司 | Light-emitting element having a plurality of contact parts |
| US20120104460A1 (en) * | 2010-11-03 | 2012-05-03 | Alta Devices, Inc. | Optoelectronic devices including heterojunction |
| CN102456773A (en) * | 2010-11-03 | 2012-05-16 | 奥塔装置公司 | Metallic contacts for photovoltaic devices and low temperature fabrication processes thereof |
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| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150325 |