CN104465428B - A kind of method of copper copper metal thermocompression bonding - Google Patents
A kind of method of copper copper metal thermocompression bonding Download PDFInfo
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- CN104465428B CN104465428B CN201310423177.8A CN201310423177A CN104465428B CN 104465428 B CN104465428 B CN 104465428B CN 201310423177 A CN201310423177 A CN 201310423177A CN 104465428 B CN104465428 B CN 104465428B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L21/603—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving the application of pressure, e.g. thermo-compression bonding
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/03011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
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Abstract
The present invention provides a kind of method of copper copper metal thermocompression bonding, and methods described at least includes step：The first disk and the second disk to be bonded is first provided, first disk includes the first substrate, the first passivation layer and the first Ti Cu alloy firms, and second disk includes the second substrate, the second passivation layer and the 2nd Ti Cu alloy firms；The first Ti Cu alloy firms surfaces of first disk and the 2nd Ti Cu alloy firms surface of the second disk are subjected to thermocompression bonding again；Finally made annealing treatment in protective gas; the Ti atoms in the first Ti Cu alloy firms are made to be spread to the first passivation layer surface; Ti atoms in 2nd Ti Cu alloy firms spread to the second passivation layer surface; and it is final in first, second passivation layer surface formation Ti adhesion/barriers; and Cu atoms spread to bonding face, bonding is realized.The method of the present invention only needs to carry out two substrates respectively cosputtering before bonding, and sputtering number of times reduces half, and technique is relatively easy, good reliability, and process costs are relatively low, eventually pass annealing and diffuse to form Ti adhesion/barriers, and make the bonding effect of copper more preferably.
Description
Technical field
The invention belongs to field of semiconductor devices, it is related to the bonding of disk in three-dimension packaging field, it is more particularly to a kind of
The method of copper-copper metal thermocompression bonding.
Background technology
With chip size reduction and the raising of integrated level, traditional two-dimentional integrated technology runs into the development for being difficult to overcome
Bottleneck.Compared with two-dimentional integrated technology, three-dimensional integration technology can realize chip multifunction, improve chip integration, reduce letter
Number delay, reduction power consumption.Three-dimensional integration technology generally can be divided into transistor stack, die-level bonding, tube core-wafer bonding, crystalline substance
Circle level bonding, wherein wafer scale bonding is optimal way of realization, is integrated into available for heterogeneous, and cost low yield is high, each layer
Interconnection between chip is by silicon hole（TSV）Realize.
Wafer bonding refers to the atomic reaction formation covalent bond for making wafer bonding interface with the help of outside energy and tied
Integrator, and reach the micro-processing technology of certain bond strength.Conventional bonding techniques have oxide Direct Bonding, metal-
Metal bonding and viscose glue bonding.
As shown in figure 1, traditional copper-copper metal Direct Bonding processing step is：
First there is provided the first pending substrate 101 ' and the second substrate 201 ', formed on first substrate 101 '
First passivation layer 102 ', forms the second passivation layer 202 ' on the second substrate 201 '；
Then, the first Ti adhesion/barriers 104 ' and the first Cu metals are sputtered successively on first passivation layer 102 '
Layer 105 ', the 2nd Ti adhesion/barriers 204 ' and the 2nd Cu metal levels 205 ' are sputtered on second passivation layer 202 ' successively；
Finally, surface of first substrate 101 ' containing the first Cu metal levels 105 ' and the second substrate 201 ' are contained into the 2nd Cu
The surface of metal level 205 ' carries out contact bonding.It is illustrated in figure 2 the structural representation before bonding.
From above-mentioned steps, traditional copper-copper metal Direct Bonding technique is needed respectively to two substrates to be bonded
Adhesion/barrier and copper are sputtered, is bonded afterwards, sputtering number of times is more, and technique is complex.
Therefore, the present invention proposes a kind of method of new copper-copper metal thermocompression bonding, in substrate surface cosputtering Ti-Cu
Carried out once in extra annealing, annealing process after metallic film, bonding, Ti can be gathered to substrate direction and ultimately formed viscous
Attached/barrier layer.The method bonding effect of the present invention is good, and technique is simple, and reliability is good.
The content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of copper-copper metal thermocompression bonding
Method, for solve in the prior art be bonded before sputtering often, complex process the problem of.
In order to achieve the above objects and other related objects, the present invention provides a kind of method of copper-copper metal thermocompression bonding, institute
The method for stating copper-copper metal thermocompression bonding at least comprises the following steps：
1）First disk and the second disk to be bonded be provided, first disk include the first substrate, be produced on it is described
First passivation layer of the first substrate surface and the first Ti-Cu alloy firms for being produced on first passivation layer surface；Described
Two disks include the second substrate, are produced on the second passivation layer of second substrate surface and are produced on the second passivation layer table
The 2nd Ti-Cu alloy firms in face；
2）First disk and the second disk are subjected to thermocompression bonding, the first disk contains the first Ti-Cu alloy firms
Surface and the second disk surface for containing the 2nd Ti-Cu alloy firms contact to form bonding face；
3）Made annealing treatment in protective gas, the Ti atoms in the first Ti-Cu alloy firms is passivated to first
Layer surface diffuses to form the first Ti adhesion/barriers, Cu atoms and spread to bonding face；Ti in 2nd Ti-Cu alloy firms is former
Son diffuses to form the 2nd Ti adhesion/barriers, Cu atoms to the second passivation layer surface and spread to bonding face；First Ti-Cu alloys
Common Cu metal levels are formed after Cu atoms permeatings in Cu atoms and the 2nd Ti-Cu alloys-film in film, key is finally realized
Close.
As a kind of preferred scheme of the method for copper-copper metal thermocompression bonding of the present invention, the first Ti-Cu alloys are thin
Film and the 2nd Ti-Cu alloy firms are made using cosputtering technique.
As a kind of preferred scheme of the method for copper-copper metal thermocompression bonding of the present invention, the cosputtering technique is more
Carried out in target cavity, target is Ti and Cu, operating pressure during sputtering is less than 10-2Support, Cu sputter rate is fast for Ti sputtering
5~8 times of rate.
As a kind of preferred scheme of the method for copper-copper metal thermocompression bonding of the present invention, described first formed is made
The thickness of Ti-Cu alloy firms is 0.2~10 μm, and the thickness of the 2nd Ti-Cu alloy firms is 0.2~10 μm.
It is used as a kind of preferred scheme of the method for copper-copper metal thermocompression bonding of the present invention, step 2）Middle progress hot pressing key
Also include acetic acid cleaning is carried out to the first Ti-Cu alloy firms and the 2nd Ti-Cu alloy firms surface and dried before closing
Step.
As a kind of preferred scheme of the method for copper-copper metal thermocompression bonding of the present invention, the temperature of thermocompression bonding is carried out
For 350~450 DEG C, the time is 30~40 minutes, and pressure is 2000~4000N.
As a kind of preferred scheme of the method for copper-copper metal thermocompression bonding of the present invention, in N2Annealed in atmosphere
Processing, the temperature range of annealing is 350~450 DEG C, and the time range of annealing is 60~100 minutes.
It is used as a kind of preferred scheme of the method for copper-copper metal thermocompression bonding of the present invention, the step 1）In make
The first substrate and the second substrate surface are cleaned respectively before first passivation layer and the second passivation layer.
As a kind of preferred scheme of the method for copper-copper metal thermocompression bonding of the present invention, first passivation layer is two
Silica, silicon nitride, PI or BCB, the thickness of first passivation layer is 0.2~5 μm；Second passivation layer is titanium dioxide
Silicon, silicon nitride, PI or BCB, the thickness of second passivation layer is 0.2~5 μm.
It is used as a kind of preferred scheme of the method for copper-copper metal thermocompression bonding of the present invention, first passivation layer and the
Two passivation layers are made using thermal oxide, chemical vapor deposition or spin coating proceeding.
As described above, the method for copper-copper metal thermocompression bonding of the present invention, has the advantages that：First in two linings
Prepare the first Ti-Cu alloy firms and the 2nd Ti-Cu alloy firms on bottom respectively, then by the first Ti-Cu alloy firms and second
Ti-Cu alloy firms are bonded, and an annealing process is undergone afterwards just can separate Ti and Cu, wherein, Ti is moved to substrate terminal
Move and form stable adhesion/barrier, and copper spreads to bond contact face, finally gives good bonding effect.The present invention
Method only need to carry out two substrates respectively cosputtering before bonding, sputtering number of times reduce half, technique is relative
It is relatively simple, good reliability, and process costs are relatively low, the copper bonding effect diffuseed to form by annealing is also more preferably.
Brief description of the drawings
The method flow schematic diagram that Fig. 1 is bonded for copper-copper metal of prior art.
Fig. 2 is the wafer architecture schematic diagram that prior art is bonded using the method for copper-copper metal bonding.
Fig. 3 is the method flow schematic diagram of copper-copper metal thermocompression bonding of the present invention.
Fig. 4~Fig. 5 is the method and step 1 of copper-copper metal thermocompression bonding of the present invention）The structural representation of middle presentation.
Fig. 6 carries out step 2 for the method for copper-copper metal thermocompression bonding of the present invention）Structural representation before bonding.
Fig. 7 carries out step 2 for the method for copper-copper metal thermocompression bonding of the present invention）Structural representation in bonding.
Fig. 8 carries out step 3 for the method for copper-copper metal thermocompression bonding of the present invention）Structural representation after annealing.
Component label instructions
S1~S3 steps
1 first disk
101,101 ' first substrates
102,102 ' first passivation layers
103 the oneth Ti-Cu alloy firms
104,104 ' the first Ti adhesion/barriers
105 Cu metal levels
105 ' the first Cu metal levels
2 second disks
201,201 ' second substrates
202,202 ' second passivation layers
203 the 2nd Ti-Cu alloy firms
204,204 ' the 2nd Ti adhesion/barriers
205 ' the 2nd Cu metal levels
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Refer to accompanying drawing.It should be noted that the diagram provided in the present embodiment only illustrates the present invention in a schematic way
Basic conception, then in schema only display with relevant component in the present invention rather than according to component count during actual implement, shape
Shape and size are drawn, and it is actual when implementing kenel, quantity and the ratio of each component can be a kind of random change, and its component cloth
Office's kenel may also be increasingly complex.
The present invention provides a kind of method of copper-copper thermocompression bonding, as shown in figure 3, the method for the copper-copper thermocompression bonding is extremely
Comprise the following steps less：
Step S1 is first carried out, as shown in Figure 4 and Figure 5 there is provided the first disk 1 to be bonded and the second disk 2, described
One disk 1 includes the first substrate 101, be produced on first passivation layer 102 on the surface of the first substrate 101 and be produced on described the
The first Ti-Cu alloy firms 103 on the surface of one passivation layer 102；Second disk 2 include the second substrate 201, be produced on it is described
Second passivation layer 202 on the surface of the second substrate 201 and be produced on the surface of the second passivation layer 202 the 2nd Ti-Cu alloys it is thin
Film 203.
First substrate 101, the second substrate 201 can be silicon substrate or SOI, it is of course also possible to be that other are suitable
Substrate.In the present embodiment, the substrate 201 of the first substrate 101 and second is silicon substrate.First substrate 101 and second
Peripheral circuit and plane storage organization etc. can also be included in substrate 201, do not limited herein.
The diameter of the substrate 201 of first substrate 101 and second includes but is not limited to 4 cun, 8 cun etc..In the present embodiment, carry
Pending the first substrate 101 and the second substrate 201 are used as 4 cun of silicon chip of two panels.
, it is necessary to the first substrate 101 and the second lining before the making of the first passivation layer 102 and the second passivation layer 202 is carried out
The surface of bottom 201 is cleaned, the general standard cleaning technique cleaning using acetone ultrasound+EtOH Sonicate+RC1+RC2.Specifically,
Acetone and alcoholic solution are first used, each cleaning substrate 3~5 minutes, use RC1 afterwards under ul-trasonic irradiation（NH4OH:H2O2：
H2O）And RC2（HCl：H2O2：H2O）It is respectively washed 15 minutes.
Using thermal oxide, chemical vapor deposition（CVD）Or spin coating proceeding makes first passivation layer 102 and second
Passivation layer 202.In the present embodiment, using the plasma reinforced chemical vapour deposition technique in chemical vapor deposition method
（PECVD）To make the passivation layer 202 of the first passivation layer 102 and second.Make the first passivation layer 102 and second formed blunt
The material for changing layer 202 can be inorganic material class, such as, silica or silicon nitride etc. or organic-based material, than
Such as, PI（Polyimides, Polyimide is abbreviated as PI,）Or BCB（Benzocyclobutene）Deng it is of course also possible to be that other are fitted
The material of conjunction.In the present embodiment, the passivation layer 202 of the first passivation layer 102 and second is silica, for being served as a contrast as silicon
The protective layer at bottom, prevents the metal of subsequent deposition from being spread to silicon substrate, is also prevented from the periphery electricity in silicon substrate or silicon substrate
The structures such as road are corroded in follow-up cleaning.In order that the maximum limit of 102 and second passivation layer of the first passivation layer 202
Degree plays a protective role, and the thickness of the passivation layer 202 of the first passivation layer 102 and second can be produced on 0.2~5 μ m
It is interior.In the present embodiment, the thickness of the passivation layer 202 of the first passivation layer 102 and second is 1 μm.
The first Ti-Cu alloy firms 103 and the 2nd Ti-Cu alloy firms are made using cosputtering or electroplating technology
203, it is of course also possible to use other suitable techniques come complete prepare.In the present embodiment, cosputtering technique system is used
Make the first Ti-Cu alloy firms 103 and the 2nd Ti-Cu alloy firms 203, technique is simple and quality of alloy firm is high.Splash altogether
Penetrate technique to carry out in many target cavitys, first carry out the preparation of the first Ti-Cu alloy firms 103, then to carry out the 2nd Ti-Cu alloys thin
The preparation of film 203.The target of use is respectively Ti and Cu, and two kinds of target materials are splashed to the surface shape of the first passivation layer 102 simultaneously
Into the first Ti-Cu alloy firms 103.The preparation of 2nd Ti-Cu alloy firms 203 is also in the same way.In preparation process,
Operating pressure is less than 10-2Support, Cu sputter rate is 5~8 times of Ti sputter rate.Sputtering time is according to sputtering power and conjunction
The thickness of sputtering needed for gold thin film is determined, and in general, if sputtering power is smaller, sputtering time is longer, on the contrary then anti-；If closing
The thickness of sputtering is smaller needed for gold thin film, and sputtering time is shorter, on the contrary then anti-.A kind of scheme optimized as the present invention, system
The thickness range of standby the first Ti-Cu alloy firms 103 formed and the 2nd Ti-Cu alloy firms 203 is 0.2~10 μ
M, sputtering power during cosputtering is 150~200 watts, and the time range of required sputtering is 60~100 minutes.First Ti-
The thickness of the Ti-Cu alloy firms 203 of Cu alloy firms 103 and the 2nd also can be adjusted suitably as needed.
As an example, operating pressure during cosputtering is 5 × 10-3Support, Cu and Ti sputter rate are respectively 0.08nm/s
And 0.01nm/s, sputtering power is 160 watts, and sputtering time is 90 minutes, the He of the first Ti-Cu alloy firms 103 of formation
The thickness of 2nd Ti-Cu alloy firms 203 is respectively 9 μm.
Then step S2 is performed, as shown in Figure 6 and Figure 7, the disk 2 of the first disk 1 and second thermocompression bonding is subjected to,
First surface of the disk 1 containing the first Ti-Cu alloy firms 103 and the second disk 2 contain the 2nd Ti-Cu alloy firms 203
Surface contacts to form bonding face.
Surface and the 2nd Ti-Cu alloy firms of the first Ti-Cu alloy firms 103 are needed before carrying out thermocompression bonding
203 surfaces are cleaned and dried, and the cleaning fluid that cleaning is used includes but is not limited to acetic acid, watery hydrochloric acid or dilute sulfuric acid etc..This reality
Apply in example, the surface of the first Ti-Cu alloy firms 103 and the surface of the 2nd Ti-Cu alloy firms 203 are carried out using acetic acid
Cleaning.
First disk 1 and the second disk 2 are subjected to thermocompression bonding, the structure before bonding is as shown in fig. 6, by be bonded
The surface and the surface of the 2nd Ti-Cu alloy firms 203 of one Ti-Cu alloy firms 103 are relative.It is illustrated in figure 7 the in bonding
One disk 1 and the second disk 2, the structure is placed in the bonding apparatus in 350~450 DEG C of temperature ranges, and along as shown in Figure 7
The direction of arrow on apply size be 2000~4000N pressure, keep said temperature and the pressure time of about 30~40 minutes,
Obtain the bonding structure that the first Ti-Cu alloy firms 103 and the bonding of the 2nd Ti-Cu alloy firms 203 are integrated.
As an example, the process of thermocompression bonding is：0.01mbar is evacuated to, and is warming up to 400 DEG C, to be bonded
Apply 3000N pressure on one disk 1 and the second disk 2, bonding time is 30 minutes, and room temperature is cooled to afterwards.
Step S3 is finally performed, is made annealing treatment, made in the first Ti-Cu alloy firms 103 in protective gas
Ti atoms form the first Ti adhesion/barriers 104, Cu atoms to the diffusion into the surface of the first passivation layer 102 and spread to bonding face；Second
Ti atoms in Ti-Cu alloy firms 203 form the 2nd Ti adhesion/barriers 204, Cu to the diffusion into the surface of the second passivation layer 202
Atom spreads to bonding face；Cu is former in Cu atoms and the 2nd Ti-Cu alloys-film 203 in first Ti-Cu alloy firms 103
Common Cu metal levels 105 are formed after son diffusion, it is final to realize bonding.
The temperature for carrying out annealing process can be in the range of 350~450 DEG C, and processing time is within 60~100 minutes.Make
For example, annealing temperature is 400 DEG C, and annealing time is 90 minutes.Further, annealing process is in N2Carried out in atmosphere, certainly,
It can also be annealed with inert gas or other inactive gas as protective gas, such as, and Ar gas.
After being annealed, Cu atoms in the first Ti-Cu alloy firms 103 and the 2nd Ti-Cu alloys-film 203 and
Ti atoms can be gradually disengaged, wherein, in the first Ti-Cu alloy firms 103 Ti atoms to the diffusion into the surface of the first passivation layer 102,
The first stable Ti adhesion/barriers 104 are formed on the surface of the first passivation layer 102；Ti in the film of 2nd Ti-Cu alloys 203
Atom forms the 2nd stable Ti adhesion/barriers on the surface of the second passivation layer 202 to the diffusion into the surface of the second passivation layer 202
204；And the Cu atoms in the first Ti-Cu alloy firms 103 and the 2nd Ti-Cu alloy firms 203 all spread to bond contact face,
Common Cu metal levels 105 are formed on bonding face, the first disk 1 and the second disk 2 are firmly bonded by the Cu metal levels 105
Together, as shown in Figure 8.
After thin 103 film of first Ti-Cu alloys and Ti atoms and Cu atoms in the 2nd Ti-Cu alloy firms 203 are separated
Formation the first Ti adhesion/barriers 104 and the 2nd Ti adhesion/barriers 204 thickness and sputtering when Cu and Ti sputtering
Speed is relevant, such as, if Cu and Ti sputter rate is respectively 0.08nm/s and 0.01nm/s, the first Ti-Cu alloys of formation
The thickness of film 103 is 9 μm, then after separating, the thickness of the first Ti adhesion/barriers 204 is about 1 μm, the first Ti-Cu alloys
About 8 μm of the Cu layers that film 103 is separated, equally, the thickness of Ti and Cu after the separation of the 2nd Ti-Cu alloy firms can also be used
Which is estimated.Certainly, because the front and rear atomic density of separation has certain change, the thickness after separation can be in allowed band
Inside there is certain deviation.
Why Ti atoms and Cu atoms can spread to specific direction, and reason is：Ti and Cu diffusion is by original
The relative displacement of son is come what is realized, and in crystal lattice, any atom will move to another position from a position and have to
Certain diffusion activation energy is obtained, because Ti fusing point is 1.53 times of Cu, Ti atomic binding energy is also 1.4 times of Cu, because
This Ti diffusion activation will can be far longer than Cu, and Cu and Ti atom sizableness, easily spread.In addition, positioned at conjunction
Gold thin film surface（Bond contact face）The diffusion activation energy of the copper of position is smaller.Therefore, in annealing process after bonding, Cu has
The trend spread to bond contact face, the hole left after corresponding copper diffusion can be filled by Ti atoms, macroscopically be observed
It can be spread to Ti to substrate direction.
In summary, the present invention provides a kind of method of copper-copper metal thermocompression bonding, and this method is used in bonding and first made
Standby first Ti-Cu alloy firms and the 2nd Ti-Cu alloy firms, just can be by Ti and Cu points through going through an annealing process after bonding
From, wherein, Ti is moved to substrate terminal and is formed stable barrier layer/adhesion layer, and copper spreads to bond contact face, finally gives
Good bonding effect.
So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (8)
1. the method for a kind of copper-copper metal thermocompression bonding, it is characterised in that the method for the copper-copper metal thermocompression bonding is at least
Including step：
1) the first disk and the second disk to be bonded is provided, first disk includes the first substrate, is produced on described first
First passivation layer of substrate surface and the first Ti-Cu alloy firms for being produced on first passivation layer surface；Second circle
Piece includes the second substrate, is produced on the second passivation layer of second substrate surface and is produced on second passivation layer surface
2nd Ti-Cu alloy firms；
2) first disk and the second disk are subjected to thermocompression bonding, the first disk contains the table of the first Ti-Cu alloy firms
The surface that face and the second disk contain the 2nd Ti-Cu alloy firms contacts to form bonding face, and the temperature for carrying out thermocompression bonding is 350
~450 DEG C, the time is 30~40 minutes, and pressure is 2000~4000N, and room temperature is cooled to afterwards；
3) made annealing treatment in protective gas, make Ti atoms in the first Ti-Cu alloy firms to the first passivation layer table
Face diffuses to form the first Ti adhesion/barriers, Cu atoms and spread to bonding face；Ti atoms in 2nd Ti-Cu alloy firms to
Second passivation layer surface diffuses to form the 2nd Ti adhesion/barriers, Cu atoms and spread to bonding face；First Ti-Cu alloy firms
In Cu atoms and the 2nd Ti-Cu alloys-film in form common Cu metal levels after Cu atoms permeatings, it is final to realize bonding,
In N2The annealing is carried out in atmosphere, the temperature range of annealing is 350~450 DEG C, the time range of annealing is 60
~100 minutes.
2. the method for copper according to claim 1-copper metal thermocompression bonding, it is characterised in that：The first Ti-Cu alloys
Film and the 2nd Ti-Cu alloy firms are made using cosputtering technique.
3. the method for copper according to claim 2-copper metal thermocompression bonding, it is characterised in that：The cosputtering technique exists
Carried out in many target cavitys, target is Ti and Cu, operating pressure during sputtering is less than 10-2Support, Cu sputter rate is Ti sputtering
5~8 times of speed.
4. the method for copper according to claim 1-copper metal thermocompression bonding, it is characterised in that：Make described the formed
The thickness of one Ti-Cu alloy firms is 0.2~10 μm, and the thickness of the 2nd Ti-Cu alloy firms is 0.2~10 μm.
5. the method for copper according to claim 1-copper metal thermocompression bonding, it is characterised in that：Step 2) middle progress hot pressing
Also include carrying out acetic acid cleaning to the first Ti-Cu alloy firms and the 2nd Ti-Cu alloy firms surface before bonding and dry
The step of.
6. the method for copper according to claim 1-copper metal thermocompression bonding, it is characterised in that：The step 1) in system
The first substrate and the second substrate surface are cleaned respectively before making the first passivation layer and the second passivation layer.
7. the method for copper according to claim 1-copper metal thermocompression bonding, it is characterised in that：First passivation layer is
Silica, silicon nitride, PI or BCB, the thickness of first passivation layer is 0.2~5 μm；Second passivation layer is titanium dioxide
Silicon, silicon nitride, PI or BCB, the thickness of second passivation layer is 0.2~5 μm.
8. the method for copper-copper metal thermocompression bonding according to any one of claim 1,6 or 7, it is characterised in that：It is described
First passivation layer and the second passivation layer are made using thermal oxide, chemical vapor deposition or spin coating proceeding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310423177.8A CN104465428B (en) | 2013-09-16 | 2013-09-16 | A kind of method of copper copper metal thermocompression bonding |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310423177.8A CN104465428B (en) | 2013-09-16 | 2013-09-16 | A kind of method of copper copper metal thermocompression bonding |
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| Publication Number | Publication Date |
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| CN104465428A CN104465428A (en) | 2015-03-25 |
| CN104465428B true CN104465428B (en) | 2017-10-13 |
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| CN201310423177.8A Expired - Fee Related CN104465428B (en) | 2013-09-16 | 2013-09-16 | A kind of method of copper copper metal thermocompression bonding |
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| DE102015121775B3 (en) * | 2015-12-15 | 2016-12-15 | Infineon Technologies Ag | Method for connecting a semiconductor chip to a metallic surface of a substrate by means of two contact metallization layers and method for producing an electronic assembly |
| CN106298452B (en) * | 2016-08-29 | 2019-05-17 | 中国科学院微电子研究所 | A kind of wafer bonding method pressed based on array |
| CN117747573A (en) * | 2022-09-13 | 2024-03-22 | 华为技术有限公司 | Chip packaging structure, manufacturing method thereof and electronic equipment |
| CN115821397A (en) * | 2022-12-22 | 2023-03-21 | 燕山大学 | Bonded copper single crystal and atomic-scale diffusion bonding process method thereof |
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