CN104393108A - Strong polarization device for high-efficiency nano dipole solar cell and method - Google Patents
Strong polarization device for high-efficiency nano dipole solar cell and method Download PDFInfo
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- CN104393108A CN104393108A CN201410583508.9A CN201410583508A CN104393108A CN 104393108 A CN104393108 A CN 104393108A CN 201410583508 A CN201410583508 A CN 201410583508A CN 104393108 A CN104393108 A CN 104393108A
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 230000010287 polarization Effects 0.000 title claims abstract description 27
- 238000000137 annealing Methods 0.000 claims abstract description 38
- 230000005684 electric field Effects 0.000 claims description 39
- 238000009413 insulation Methods 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 13
- 238000003475 lamination Methods 0.000 claims description 11
- 239000003570 air Substances 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052618 mica group Inorganic materials 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 239000010445 mica Substances 0.000 claims description 5
- 239000004698 Polyethylene Substances 0.000 claims description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- -1 polypropylene Polymers 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000004743 Polypropylene Substances 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- 229920002678 cellulose Polymers 0.000 claims description 2
- 229920003086 cellulose ether Polymers 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229920006289 polycarbonate film Polymers 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 229920001155 polypropylene Polymers 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 239000004800 polyvinyl chloride Substances 0.000 claims description 2
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 5
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 5
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 238000010792 warming Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a strong polarization device for a high-efficiency nano dipole solar cell, which comprises a lower electrode, an object thin film manufactured on the lower electrode, an insulated thin film manufactured on the object thin film, an upper electrode manufactured on the thin film, and a high-voltage DC power supply with one end connected with the lower electrode and the other end connected with the upper electrode. The device and the method can be applied to large area processing and large-scale assembly line production, and have the advantages that the structure is simple, and parameters of an annealing process are convenient to control.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly a kind of strong polarization device for efficient nano dipole solar cell and method.
Background technology
During annealing, electric field is loaded to film and there is the problems such as distance is near, temperature is high, electrode contact is difficult.Especially thickness is close to the film of 10nm-5mm, and it is very difficult for will not puncturing at the electric field of its two ends loading more than 1000V, because the dielectric constant of air is 3KV/cm.Simple at thin application of loads on sealing membrane highfield, or leave certain distance and load highfield across air, all can cause air breakdown, make film local current excessive and burn.Also to carry out annealing in process to film simultaneously, more increase difficulty film being added to highfield.If film growth is in non-conductive substrate, to film added electric field, difficulty is also deposited in the contact of electrode and film.
Summary of the invention
The object of the invention is to, propose a kind of for the strong polarization device of efficient nano dipole solar cell and method.It is simple that the present invention has structure, and parameter and annealing is convenient to be controlled, suitable large-area treatment and scale production line balance.
The invention provides a kind of strong polarization device for efficient nano dipole solar cell, comprising:
One bottom electrode;
One object film, this object film makes on the bottom electrode;
One insulation film, this insulation film is produced on object film;
One top electrode, this top electrode is produced on film;
One high-voltage DC power supply, its one end is connected with bottom electrode, and the other end is connected with top electrode.
The present invention also provides a kind of strong polarization method for efficient nano dipole solar cell, and it is application device as above, comprises the following steps:
Step 1: will the object film of added electric field process be needed to be placed between insulation film and top electrode, or be placed between described insulation film and bottom electrode, forms lamination;
Step 2: lamination is put into annealing furnace, heats up;
Step 3: load electric field arrangement on-load voltage by one by needing the object film of added electric field process;
Step 4: lowered the temperature by object film, takes out processed described lamination, completes polarization.
The invention has the beneficial effects as follows:
1, the object film thickness needing added electric field to carry out annealing in process can reach 10nm-5mm, and thickness is thin; Described insulation film thickness is 20 μm of-5mm.
2, electric field strength can up to 106V/cm.
3, the way of contact of electrode and film is flexible.In very limited annealing furnace space, the contact between electrode and film can according to the state of material, substrate and determining.
4, select resistant to elevated temperatures insulation film then can bear different temperatures, the insulation film wherein had can tolerate 800 DEG C of-1000 DEG C of high temperature.
Accompanying drawing explanation
For further illustrating concrete technology contents of the present invention, illustrate as rear below in conjunction with the drawings and specific embodiments, wherein:
Fig. 1 is apparatus of the present invention structural representation;
Fig. 2 is preparation flow figure of the present invention.
Embodiment
Refer to shown in Fig. 1, the invention provides a kind of strong polarization device for efficient nano dipole solar cell, comprising:
One bottom electrode 1;
One object film 2, this object film 2 is produced on bottom electrode 1;
One insulation film 3, this insulation film 3 is produced on object film 2, and the material of described insulation film 3 is micas, aluminium oxide, polyimide film, polypropylene film, polyethylene film, pet film, polycarbonate film, cellulose ester film, cellulose ether film, poly-ethylene fluoride film, polystyrene film, poly-to styrene film or polyvinyl chloride film;
One top electrode 4, this top electrode 4 makes on the membrane 3;
Wherein said bottom electrode 1 and the material of top electrode 4 are metal or transparent conductive film;
One high-voltage DC power supply 5, its one end is connected with bottom electrode 1, and the other end is connected with top electrode 4.
Referring again to Fig. 2, and Fig. 1 is consulted in combination, and the invention provides a kind of strong polarization method for efficient nano dipole solar cell, it applies device as the aforementioned, comprises the following steps:
Step 1: will the object film 2 of added electric field process be needed to be placed between insulation film 3 and top electrode 4, or be placed between described insulation film 3 and bottom electrode 1, forms lamination;
Step 2: lamination is put into annealing furnace, heat up, described annealing atmosphere is air, nitrogen, argon gas or helium, ventilating mode is continuity or intermittence, described by lamination intensification, the temperature of this intensification is 150 DEG C-1000 DEG C, and the time of this annealing is 5min-300min;
Step 3: simultaneously or afterwards will the object film 2 of added electric field process be needed to load electric field arrangement 5 on-load voltage by one in annealing, the mode of described on-load voltage is continuity or intermittent on-load voltage, the voltage of described loading is 500V-50000V, and the time is 10s-300min;
Step 4: lowered the temperature by object film 2, takes out processed described lamination, and the temperature that described object film 2 is lowered the temperature is less than 40 DEG C, completes polarization.
The present invention loads highfield device and is made up of the pair of electrodes 4,1 of arranging up and down, has insulation film 3 between top electrode 4 and bottom electrode 1.Described insulation film 3 is attached to the lower surface of top electrode 4 or the upper surface of bottom electrode 1.Need the object film 2 of added electric field process between described insulation film 3 and top electrode 4, or between described insulation film 3 and bottom electrode 1.Described need the position relationship between the object film 2 of added electric field process and insulation film 3, upper/lower electrode 4,1 to be followed successively by top electrode 4, insulation film 3, the object film 2 needing added electric field process, bottom electrode 1 from top to bottom, or be top electrode 4, the object film 2 needing added electric field process, insulation film 3, bottom electrode 1.
By device of the present invention, object film 2 thickness of polarization of can annealing process reaches 10nm-5mm, truly realizes ultrathin film and loads highfield polarization; Insulation film 3 thickness of device is 20 μm of-5mm; Easily realize 10 of the requirement of dipole battery macroscopic polarization
4the demand of the highfield of V/cm; In addition, polarized electric field intensity can reach 10
6v/cm, can form superpower polarization to battery; Select resistant to elevated temperatures insulation film then can bear different temperatures, the insulation film wherein had can tolerate 800 DEG C of-1000 DEG C of high temperature, is beneficial to object film 2 and forms macroscopic polarization.
Embodiment 1
The present embodiment needs the film of added electric field annealing in process to be the object film 2 of cadmium sulfide and cadmium telluride, thickness is 2 μm, electric field is provided by the adjustable constant voltage dc source 5 of 500V-10000V, a rectangle mica sheet is put, as insulation film 3 between the object film 2 that top electrode 4 mixes with cadmium sulfide and cadmium telluride.Mica sheet thickness is 0.2mm.Top electrode 4 is aluminum material, and bottom electrode 1 is ITO (mixing the indium oxide material of tin).The process of process is:
(1) the loading electric field arrangement of the object film with cadmium sulfide and cadmium telluride mixing is put into annealing furnace, annealing atmosphere is dry air, and flow is 0.5L/min;
(2) object film is warming up to 500 DEG C;
(3) 2800V voltage is added by high-voltage DC power supply at object film two ends, added electric field process while film is annealed, added electric field continuous annealing processing time 30min;
(4) cooling causes the film that less than 40 DEG C are taken out processed majority.
The present embodiment adds to 2800V at voltage, and annealing temperature is annealed, without punch-through up under 500 DEG C of conditions.
Embodiment 2
Need the object film 2 for cadmium sulfide and cadmium telluride of added electric field annealing in process, thickness is 1 μm, electric field is provided by the adjustable constant voltage dc source 5 of 500V-10000V, a polyimide insulative film 3 is put between top electrode 4 and film 2, thickness is 0.15mm, top electrode 4 is aluminum material, and bottom electrode 1 is FTO (mixing the stannic oxide materials of fluorine).Added electric field annealing in process, voltage can add to 3000v, annealing temperature up to 300 DEG C, without punch-through.The process of process is: the film that band loads electric field arrangement is put into annealing furnace by (1), and annealing atmosphere is argon gas, flow 0.1L/min; (2) film is warming up to 300 DEG C; (3) add 3000V voltage by high-voltage DC power supply at film two ends, annealing added electric field process is simultaneously carried out to film, processing time 80min; (4) cooling causes less than 40 DEG C and takes out sample.
Embodiment 3
The film of added electric field annealing in process is needed to be cadmium sulfide object film 2, thickness is 0.5 μm, electric field is provided by the adjustable constant voltage dc source 5 of 500V-5000V, an insulation film 3 rectangle mica sheet is put between top electrode and film, mica thickness is 0.1mm, top electrode 4 is platinum prepared material, and bottom electrode 1 is FTO (mixing the stannic oxide materials of fluorine).Added electric field annealing in process, voltage can add to 1000v, annealing temperature up to 450 DEG C, without punch-through.The process of process is: the film that band loads electric field arrangement is put into annealing furnace by (1), and annealing atmosphere is original air in cavity; (2) film is warming up to 450 DEG C; (3) add 3000V voltage by high-voltage DC power supply at film two ends, annealing added electric field process is simultaneously carried out to film, processing time 100min; (4) cooling causes less than 40 DEG C and takes out sample.
Embodiment 4
What need added electric field annealing in process is cadmium telluride object film 2, thickness is 2 μm, electric field is provided by the adjustable constant voltage dc source 5 of 500V-8000V, a rectangle polyimide insulative film 3 is put between top electrode and film, thickness is 0.1mm, top electrode 4 is stainless steel prepared material, and bottom electrode 1 is ITO (mixing the indium oxide material of tin).Added electric field annealing in process, voltage can add to 1300v, annealing temperature up to 250 DEG C, without punch-through.The process of process is: the film that band loads electric field arrangement is put into annealing furnace by (1); Annealing atmosphere is nitrogen, flow 1L/min; (2) film is warming up to 250 DEG C; (3) add 1300V voltage by high-voltage DC power supply at film two ends, annealing added electric field process is simultaneously carried out to film, processing time 80min; (4) cooling causes less than 40 DEG C and takes out sample.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1., for a strong polarization device for efficient nano dipole solar cell, comprising:
One bottom electrode;
One object film, this object film makes on the bottom electrode;
One insulation film, this insulation film is produced on object film;
One top electrode, this top electrode is produced on film;
One high-voltage DC power supply, its one end is connected with bottom electrode, and the other end is connected with top electrode.
2. the strong polarization device for efficient nano dipole solar cell according to claim 1, wherein said bottom electrode and the material of top electrode are metal or transparent conductive film.
3. the strong polarization device for efficient nano dipole solar cell according to claim 1, the material of wherein said insulation film is mica, aluminium oxide, polyimide film, polypropylene film, polyethylene film, pet film, polycarbonate film, cellulose ester film, cellulose ether film, poly-ethylene fluoride film, polystyrene film, poly-to styrene film or polyvinyl chloride film.
4., for a strong polarization method for efficient nano dipole solar cell, it is application device as claimed in claim 1, comprises the following steps:
Step 1: will the object film of added electric field process be needed to be placed between insulation film and top electrode, or be placed between described insulation film and bottom electrode, forms lamination;
Step 2: lamination is put into annealing furnace, heats up;
Step 3: load electric field arrangement on-load voltage by one by needing the object film of added electric field process;
Step 4: lowered the temperature by object film, takes out processed described lamination, completes polarization.
5. the strong polarization method for efficient nano dipole solar cell according to claim 4, wherein said annealing atmosphere is air, nitrogen, argon gas or helium, and ventilating mode is continuity or intermittence.
6. the strong polarization method for efficient nano dipole solar cell according to claim 4, the mode of wherein said on-load voltage is continuity or intermittent on-load voltage.
7. the strong polarization method for efficient nano dipole solar cell according to claim 4, wherein heated up by lamination, the temperature of this intensification is 150 DEG C-1000 DEG C.
8. the strong polarization method for efficient nano dipole solar cell according to claim 6, the voltage wherein loaded is 500V-50000V, and the time is 10s-300min.
9. the strong polarization method for efficient nano dipole solar cell according to claim 4, the temperature of wherein object film cooling is less than 40 DEG C.
10. the strong polarization method for efficient nano dipole solar cell according to claim 5, wherein, the time of annealing is 5min-300min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410583508.9A CN104393108A (en) | 2014-10-27 | 2014-10-27 | Strong polarization device for high-efficiency nano dipole solar cell and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410583508.9A CN104393108A (en) | 2014-10-27 | 2014-10-27 | Strong polarization device for high-efficiency nano dipole solar cell and method |
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| Publication Number | Publication Date |
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| CN104393108A true CN104393108A (en) | 2015-03-04 |
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|---|---|---|---|
| CN201410583508.9A Pending CN104393108A (en) | 2014-10-27 | 2014-10-27 | Strong polarization device for high-efficiency nano dipole solar cell and method |
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- 2014-10-27 CN CN201410583508.9A patent/CN104393108A/en active Pending
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