CN104362117A - Substrate bonding device and method - Google Patents
Substrate bonding device and method Download PDFInfo
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- CN104362117A CN104362117A CN201410682030.5A CN201410682030A CN104362117A CN 104362117 A CN104362117 A CN 104362117A CN 201410682030 A CN201410682030 A CN 201410682030A CN 104362117 A CN104362117 A CN 104362117A
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- 238000000034 method Methods 0.000 title claims abstract description 62
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- 230000008569 process Effects 0.000 claims description 34
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- 239000000463 material Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 14
- 239000004065 semiconductor Substances 0.000 description 21
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- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Gasket Seals (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Provided is a substrate bonding device and method. The substrate bonding device comprises a plurality of gaskets and a plurality of clamps. The gaskets are evenly distributed along the edge of a substrate and located on the plane corresponding to the surface of the substrate. Each gasket comprises a protruding portion and an extending portion, wherein the protruding portion extends out of the edge of the substrate, the extending portion extends by a preset length from the protruding portion along the edge of the substrate, the extending portion comprises a contacting face used for making contact with the surface of the substrate, the contact face comprises a first border and a second border, the first border is in an arc shape corresponding to the shape of the circumference of the substrate, the second border is parallel to the first border, and the distance between the second border and the circle center of the substrate is smaller than the distance between the first border and the circle center of the substrate. The clamps are evenly distributed along the circumference of the substrate. Each clamp is located between every two corresponding adjacent gaskets. By means of the substrate bonding device, the bonding effect can be improved, and the reliability of devices composed of bonded substrates is improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of substrate bonding apparatus and bonding method.
Background technology
In manufacture of semiconductor, need the wafer (Wafer) surface being formed with semiconductor device to be cut into multiple chip, again each chip is encapsulated afterwards, to form required integrated circuit or chip device.For crystal wafer chip dimension encapsulation (Wafer Level Chip Size Packaging, WLCSP) technology, after packaging and testing are carried out to wafer again cutting obtain single finished product chip, the chip size after encapsulation and nude film completely the same.Chip size after the encapsulation of crystal wafer chip dimension encapsulation technology can reach highly microminiaturized, and chip cost significantly reduces along with the reduction of chip size and the increase of wafer size.
Along with the development of semiconductor fabrication, the manufacture method of semiconductor device and the structure of semiconductor device are also day by day complicated, therefore, only carry out at a side surface of wafer the technical need that semiconductor technology processing procedure can not meet sustainable development.Such as, the manufacturing process of MEMS pressure sensor, back-illuminated type (BSI, Backside Illuminated) manufacturing process, the silicon through hole (TSV of imageing sensor, Through Silicon Via) manufacturing process of structure or the packaging technology of wafer, all need after a side surface of wafer forms semiconductor device structure, last part technology processing procedure is carried out on the opposite side surface of wafer, and in the completed after section processing procedure, then monolithic cutting is carried out to wafer.
In order to avoid when carrying out last part technology processing procedure to the opposite side surface of wafer; the established device architecture of wafer one side surface is caused to cause damage; prior art can form another bearing basement of crystal column surface bonding of device architecture; described bearing basement in the process of deburring, thinning and monolithic cutting, can protect the device architecture of described crystal column surface at last part technology processing procedure and follow-up to carry out described wafer.
But the bonding effect carrying out bonding technology with existing wafer bonding equipment is not good, the even easy device architecture to being formed at crystal column surface causes damage, reduces the reliability of device architecture.
Summary of the invention
The problem that the present invention solves is to provide a kind of substrate bonding apparatus and bonding method, improves bonding effect, improves with the device reliability formed at the bottom of bonding radical.
For solving the problem, the invention provides a kind of substrate bonding apparatus, comprise: some pads, described some pads are uniformly distributed along the edge of substrate, described some pads are positioned in the plane corresponding with substrate surface, described pad comprises interconnective protuberance and extension, described protuberance extends to beyond the edge of substrate, described extension starts to extend preset length along the edge of substrate from described protuberance, described extension comprises the contact-making surface for contacting substrate surface, described contact-making surface comprises the first border and the second boundary, described first border is the arc corresponding to substrate girth, described the second boundary is parallel to the first border, and described the second boundary is less to the distance in the substrate center of circle than the first border, some fixtures, described some fixtures are uniformly distributed along substrate girth, and described fixture is between adjacent pads.
Optionally, the quantity of described pad is more than or equal to the quantity of described fixture.
Optionally, the coincident of described first border and substrate.
Optionally, described extending part is in the one or both sides of described protuberance.
Optionally, the first boundary length being positioned at the extension of described protuberance side is 40 millimeters ~ 120 millimeters.
Optionally, the distance between described first border and the second boundary is 2.5 millimeters ~ 3 millimeters.
Optionally, the thickness of described pad is 300 microns ~ 1000 microns.
Optionally, the quantity of described fixture is 2.
Optionally, when the quantity of described fixture is 2, described fixture is positioned at the two ends of basal diameter.
Optionally, also comprise: the top electrode upper cover plate be oppositely arranged and bottom electrode bearing basement, the surface of described top electrode upper cover plate and bottom electrode bearing basement is parallel to substrate surface; Chamber, is fixed with the pad of substrate, fixture, top electrode upper cover plate and bottom electrode bearing basement and is placed in described chamber, for carrying out substrate bonding technology.
Optionally, described fixture comprises clamp base, fixture body and clamp head, and described fixture body is perpendicular to substrate surface, and described clamp base and clamp head are connected with fixture body two ends respectively, and described clamp base and clamp head are parallel to substrate surface; Described fixture body and described clamp base can be dynamically connected.
Accordingly, the present invention also provides a kind of substrate bonding method adopting the substrate bonding apparatus described in above-mentioned any one to carry out, and comprising: provide the first substrate, and described first substrate has relative first surface and second surface; Adhesive-layer is formed at the first surface of the first substrate; After the first surface of the first substrate forms adhesive-layer, described some pads are set at the first surface of described first substrate, and the first border of described some pads and the coincident of the first substrate, described protuberance extends to beyond the edge of described first substrate; There is provided the second substrate, described second substrate has the 3rd relative surface and the 4th surface; After the first surface of described first substrate arranges described some pads, alignment process is adopted to make the 3rd surface of described second substrate be positioned at described gasket surface, 3rd surface of described second substrate is relative with the first surface of the first substrate, and the coincident of described second substrate and the first substrate; After described alignment process, fixture is set in described first substrate and the second basal edge, described first substrate and the second substrate are fixed.
Optionally, described first substrate is transparent substrates; 3rd surface of described second substrate has graphical sensory device.
Optionally, before the first surface of the first substrate forms adhesive-layer, form divider wall at the first surface of described first substrate, between adjacent divider wall, be formed with opening, and the position of described opening, corresponding with the graphical sensory device position on the 3rd surface of the second substrate.
Optionally, the material of described first substrate comprises glass.
Optionally, after described alignment process, the first surface of described first substrate to the second substrate the 3rd surface between distance be 300 microns ~ 1000 microns.
Optionally, described fixture comprises fixture body and clamp head, and described fixture body is perpendicular to the first substrate and the second substrate surface, and described clamp head is connected with fixture body two ends, and described clamp head is parallel to the first substrate and the second substrate surface; After described first substrate and the second basal edge arrange fixture, the clamp head being positioned at fixture body two ends contacts with the second surface of the first substrate and the 4th surface of the second substrate respectively.
Optionally, also comprise: after described first substrate and the second basal edge arrange fixture, described first substrate, the second substrate, pad and fixture are sent in chamber; The surface of upper cover plate and bearing basement is contacted with the second surface of the first substrate and the 4th surface of the second substrate respectively, and described upper cover plate applies pressure, with the first substrate described in pressing and the second substrate to described bearing basement.
Optionally, the edge of described first substrate has the first inactive area, and the edge of described second substrate has the second inactive area, and the position of described first inactive area and the second inactive area and size mutually corresponding; After the first surface of described first substrate arranges described some pads, the extending part of described pad is in the corresponding region of described first inactive area and the second inactive area.
Optionally, described first inactive area is 3 millimeters ~ 4 millimeters along the width in the first basal diameter direction; Described second inactive area is 3 millimeters ~ 4 millimeters along the width in the second basal diameter direction.
Optionally, described first substrate or the second substrate are silicon base, silicon-Germanium base, silicon carbide substrate, silicon-on-insulator substrate, germanium on insulator substrate or III-V substrate.
Compared with prior art, technical scheme of the present invention has the following advantages:
In device of the present invention, the pad for isolating substrate has protuberance and extension, and described protuberance extends to beyond basal edge, for being connected with transmission mechanism; And described extension is used for being placed between two panels substrate and isolates.Because described extension starts to extend predeterminable range along the edge of substrate from described protuberance, the area that described extension is contacted with substrate is comparatively large, thus enables described pad support described substrate, and reaches the effect of dispersive pressure; Concrete, described extension comprises the contact-making surface for contacting substrate surface, described contact-making surface comprises the first border and the second boundary, described first border is the arc corresponding to substrate girth, described the second boundary is parallel to the first border, and described the second boundary is less to the distance in the substrate center of circle than the first border, therefore, the contact area of described contact-making surface and substrate is larger.Because described pad can provide larger support force to substrate, and support force is dispersed, therefore, before carrying out pressing, two panels substrate can be avoided to be bonded by viscose glue, therefore, then follow-uply the region between two panels substrate can be made completely to be evacuated, thus make the effect improved of process for pressing.And after pressing, the part surface of two panels substrate can be avoided to there will be glue-free phenomenon, the part surface between two panels substrate can also be avoided to occur glue phenomenon of overflowing.Therefore, described substrate bonding apparatus can make bonding after substrate surface pattern improve, the reliability of formed semiconductor device is improved.
Further, the quantity of described pad is 3, and described 3 pads are uniformly distributed along the edge of substrate, make described 3 pads can provide uniform support force to substrate, simultaneously the basad support force provided of described 3 pads be enough to ensure for bonding mutually basad between can be mutually isolated, thus can avoid before pressing, two panels substrate is bonded by viscose glue, ensure that the substrate surface pattern after pressing is good with this, the performance of semiconductor device formed with the substrate of pressing improves.
Further, described extending part is in the both sides of described protuberance, and isolate because described extension is used for being arranged between two panels substrate, the area of described extension is larger, the basad support force provided is larger, then with effectively can ensure that two panels substrate can not bond before pressing.And described extending part is in the both sides of protuberance, then described extension can comparatively large with substrate contact, makes the stress that described extension can provide larger.And described extending part is in the both sides of described protuberance, and the basad support force provided of described extension is comparatively even, therefore, it is possible to effectively ensure can not stick together between the substrate before pressing, the isolation effect between substrate is better.
Further, the first boundary length being positioned at the extension of described protuberance side is 40 millimeters ~ 120 millimeters.The preset length that the length on described first border and described extension extend along substrate boundary, when the length on described first border is within the scope of 40 millimeters ~ 120 millimeters, can ensure that described pad has enough large holding power to substrate.Thus ensure that with the performance of semiconductor device of the substrate of institute's pressing formation good.
Further, the distance between described first border and the second boundary is 2.5 millimeters ~ 3 millimeters.Comprise effective coverage due to substrate and surround the inactive area of described effective coverage, when distance between described first border and the second boundary is within the scope of 2.5 millimeters ~ 3 millimeters, can ensure that the extension of pad and the contact area of substrate are positioned at the inactive area of substrate, thus avoid described pad and contact with the effective coverage of substrate, decrease the damage of pad to substrate effective coverage, ensure that the functional of the semiconductor device formed with the substrate of pressing.
Further, the thickness of described pad is 300 microns ~ 1000 microns, thickness between the two panels substrate that namely thickness of described pad isolate with described pad, when the thickness of described pad is in 300 microns ~ 1000 micrometer ranges, can ensure to bond with viscose glue between two panels substrate, follow-up vacuumizing and the carrying out of process for pressing can be conducive to simultaneously.
In method of the present invention, after the first substrate surface forms adhesive-layer, arrange some pads at the first surface of described first substrate, described pad is namely for isolating described first substrate and follow-up the second substrate carrying out contraposition.And described pad has protuberance and extension, described protuberance extends to beyond the edge of the first substrate, for being connected with transmission mechanism; And described extension is for isolating the first substrate and the second substrate.First border of described some pads and the coincident of the first substrate, namely described extension can start to extend predeterminable range along the edge of the first substrate from described protuberance, the area that described extension is contacted with the first substrate and the second substrate is larger, thus described pad is improved the enabling capabilities of the second substrate, and reach the effect of dispersive pressure.Because described pad can provide larger support force to the first substrate and the second substrate, and the pressure be subject to can be made to be dispersed, therefore, before carrying out pressing, the first substrate and the second substrate can be avoided to be bonded by adhesive-layer, be conducive to follow-uply vacuumizing the region between the first substrate and the second substrate, thus make the effect improved of process for pressing.And after pressing, between the first substrate and the second substrate, there will not be glue-free phenomenon, the part surface between the first substrate and the second substrate can also be avoided to occur glue phenomenon of overflowing.Therefore, described substrate bonding apparatus can make bonding after the first substrate and the second substrate surface topography improve, the reliability of formed semiconductor device is improved.
Accompanying drawing explanation
Fig. 1 and Fig. 2 is the structural representation of the substrate bonding apparatus of one embodiment of the invention;
Fig. 3 to Fig. 7 is the structural representation of the substrate bonding apparatus of another embodiment of the present invention;
Fig. 8 to Figure 13 is the structural representation of the substrate bonding process of the embodiment of the present invention.
Embodiment
As stated in the Background Art, the bonding effect carrying out bonding technology with existing substrate bonding apparatus is not good, and the even easy device architecture to being formed at substrate surface causes damage.
Please refer to Fig. 1 and Fig. 2, Fig. 1 is the plan structure schematic diagram of the substrate bonding apparatus of one embodiment of the invention, Fig. 2 is the end view of Fig. 1 along AA ' secant direction, described substrate bonding apparatus is used for bonding first substrate 121 and the second substrate 122, described first substrate 121 and the second substrate 122 overlap, and coincident, described substrate bonding apparatus comprises: three pads 101, described three pads 101 are uniformly distributed along the girth of the first substrate 121 and the second substrate 122, described pad 101 is placed between the first substrate 121 and the second substrate 122, for the first substrate 121 and the second substrate 122 described in interval, two fixtures 102, described fixture 102 is positioned at the two ends along the first substrate 121 and the second substrate 122 diameter, for fixing the first substrate 121, second substrate 122 and pad 101.
When with the first substrate 121 described in above-mentioned substrate bonding apparatus bonding and the second substrate 122, first at the first substrate 121 surface coating viscose glue 123; After coating viscose glue 123, described second substrate 122 and the first substrate 121 is made to carry out contraposition, first substrate 121 and the second substrate 122 are overlapped and coincident, carry out interval by pad 101 between described first substrate 121 and the second substrate 122, and described pad is uniformly distributed along the girth of the first substrate 121 and the second substrate 122; With fixture 102, described first substrate 121, second substrate 122 and pad 101 are fixed.Follow-up under vacuum conditions to the pressure that the first substrate 121 and the second substrate 122 apply in opposite directions, make the first substrate 121 and the second substrate 122 carry out pressing.
But, owing to being subject to Action of Gravity Field, before pressing first substrate 121 and the second substrate 122, the portion adhesive 123 on described first substrate 121 surface easily contacts with the second substrate 122 surface, thus easily cause the subregion between the first substrate 121 and the second substrate 122 to be difficult to be evacuated, then bad in follow-up process for pressing effect of carrying out; After pressing, the part surface of the second substrate 122 there will be glue-free phenomenon, and meanwhile, another part surface of the second substrate 122 easily occurs glue phenomenon of overflowing.Therefore, reliability decrease, the yield of the semiconductor device that the second substrate 122 surface topography after described bonding is bad, cause the second substrate 122 to be formed reduce.
In order to solve the problem, the invention provides a kind of substrate bonding apparatus and bonding method.In described bonding apparatus, the pad for isolating substrate has protuberance and extension, and described protuberance extends to beyond basal edge, for being connected with transmission mechanism; And described extension is used for being placed between two panels substrate and isolates.Because described extension starts to extend predeterminable range along the edge of substrate from described protuberance, the area that described extension is contacted with substrate is comparatively large, thus enables described pad provide larger support force to substrate, and reaches the effect of dispersive pressure; Concrete, described extension comprises the contact-making surface for contacting substrate surface, described contact-making surface comprises the first border and the second boundary, described first border is the arc corresponding to substrate girth, described the second boundary is parallel to the first border, and described the second boundary is less to the distance in the substrate center of circle than the first border, therefore, the contact area of described contact-making surface and substrate is larger.Because described pad can provide larger support force to substrate, and pressure can be made to be dispersed, therefore, before carrying out pressing, two panels substrate can be avoided to be bonded by viscose glue, therefore, then follow-uply the region between two panels substrate can be made completely to be evacuated, thus make the effect improved of process for pressing.And after pressing, the part surface of two panels substrate can be avoided to there will be glue-free phenomenon, the part surface between two panels substrate can also be avoided to occur glue phenomenon of overflowing.Therefore, described substrate bonding apparatus can make bonding after substrate surface pattern improve, the reliability of formed semiconductor device is improved.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiments of the invention below in conjunction with accompanying drawing.
Fig. 3 to Fig. 7 is the structural representation of the substrate bonding apparatus of the embodiment of the present invention.
Please refer to Fig. 3 and Fig. 4, Fig. 3 is the plan structure schematic diagram of the substrate bonding apparatus of the present embodiment, Fig. 4 is the end view of Fig. 3 along BB ' secant direction, comprise: some pads 201, described some pads 201 are uniformly distributed along the edge of substrate 200, described some pads 201 are positioned in the plane corresponding with substrate 200 surface, described pad 201 comprises interconnective protuberance 210 and extension 211, described protuberance 210 extends to beyond the edge of substrate, described extension 211 starts to extend preset length along the edge of substrate 200 from described protuberance 210, described extension 211 comprises the contact-making surface for contacting substrate 200 surface, described contact-making surface comprises the first border 221 and the second boundary 222, described first border 221 is the arc corresponding to substrate 200 girth, described the second boundary 222 is parallel to the first border 221, and described the second boundary 222 to the first border 221 is little to the distance in substrate 200 center of circle, some fixtures 202, described some fixtures 202 are uniformly distributed along substrate 200 girth, and described fixture 202 is between adjacent pads 201.
Be described in detail below with reference to the substrate bonding apparatus of accompanying drawing to the present embodiment.
It should be noted that, because the described pad 201 (extension 211) of part is between two panels substrate 200, therefore in described vertical view Fig. 3, represent the part of described pad 201 between substrate 200 with dashed boundaries.
In the process of carrying out substrate bonding technology, need to make two panels substrate 200 to be bonded carry out contraposition, and isolate with described pad 201 between two panels substrate 200, two panels substrate 200 surface is not contacted, and described two panels substrate 200 is fixed with described fixture 202, to carry out vacuumizing and process for pressing in follow-up feeding chamber.Carry out in the two panels substrate 200 of bonding with the bonding apparatus described in the present embodiment, a slice substrate surface is coated with adhesive-layer, and described adhesive-layer is relative with another substrate 200 surface, and described pad 210 is isolated between adhesive-layer and another substrate 200.
Wherein, described adhesive-layer can be arranged in arbitrary substrate surface of two panels substrate 200, and described adhesive-layer is positioned on substrate 200 surface relative with another substrate 200.As shown in Figure 4, described adhesive-layer can be positioned on lower floor's substrate 200 surface relative with upper strata substrate 200.In another embodiment, described adhesive-layer can also be positioned on upper strata substrate 200 surface relative with lower floor substrate 200.
The quantity of described pad 201 is more than or equal to the quantity of described fixture 202, and the quantity of described fixture is 2 ~ 5.
In the present embodiment, described pad 201 is uniformly distributed between adjoining clips 202 along the edge of substrate 200.The quantity of described fixture 202 is 2, the quantity of described pad 201 is 3, described 3 pads can be uniformly distributed along the edge of substrate 200, and extension 211 part of pad 201 and substrate 200 surface contact, so that described pad 201 can be isolated between two panels substrate 200.Because described pad 201 needs and substrate 200 surface contact, in order to reduce the damage on described pad 201 pairs of substrate 200 surfaces, the region that described pad 201 contacts with substrate 200 needs the inactive area being positioned at substrate 200, and described substrate 200 comprises the effective coverage being positioned at center and the inactive area of surrounding described effective coverage, the region that therefore described pad 201 contacts with substrate 200 is positioned at the edge surface of described substrate 200.
In another embodiment, described pad 201 overlaps with described fixture 202, and namely described pad 201 is positioned between the clamp head 232 (as shown in Figure 6) of described fixture 202.When described pad 201 overlaps with described fixture 202, described pad 201 is more conducive to dispersive pressure, can avoid in the process of substrate pressing, cause described substrate 200 chipping, and can avoid two panels substrate 200 that pressing skew occurs, thus improve the pressing quality of substrate 200.Described pad 201 comprises the protuberance 210 extended to beyond substrate 200 edge, and between two panels substrate 200 extension 211, and described extension 211 starts the extension along described substrate 200 edge from described protuberance 210, and described extension 211 between two panels substrate 200 for support, the area that described extension 211 is contacted with described substrate 200 increases, the support force that then described pad 201 basad 200 provides increases, then carry out follow-up vacuumize with process for pressing before, not easily bond between described two panels substrate 200, then follow-uply can get rid of air between two panels substrate 200 completely by evacuation process, make the respond well of pressing, after effectively can avoiding bonding technology, there is glue-free phenomenon in part of substrate 200 surface, or there is glue phenomenon of overflowing in part of substrate 200 surface, thus improve with the reliability of 200 semiconductor device formed at the bottom of bonding radical.
The contact-making surface that described extension 211 contacts with substrate 200 has the first border 221 and the second boundary 222 that are parallel to each other, and described first border 221 and the second boundary 222 are arc, and described first border 221 is corresponding with the edge of substrate 200, after described pad 201 is set between substrate 200, described first border 221 can with the coincident of substrate 200, and described the second boundary 222 is compared with the center of the first border 221 closer to substrate 200, namely the contact-making surface of described extension 211 is parts of the annular corresponding with the edge of described substrate 200.In the present embodiment, described extension 211 also has the 3rd border and the 4th border that are positioned at the first border 221 and the second boundary 222 two ends, described first border 221, the second boundary 222, the 3rd border and the 4th border surround the figure forming described contact-making surface, and the extended line on described 3rd border and the 4th border overlaps with the radius of substrate 200.
In the present embodiment, the distance between described first border 221 and the second boundary 222 is 2.5 millimeters ~ 3 millimeters.Distance between described first border 221 and the second boundary 222 determines described extension 211 and stretches into distance between described substrate 200.Because described substrate 200 comprises effective coverage and surrounds the inactive area of described effective coverage, namely described inactive area is in the annular of surrounding effective coverage, and the width of described inactive area is generally 3 millimeters ~ 4 millimeters.When distance between described first border 221 and the second boundary 222 is excessive, easily causes described extension 211 to contact with substrate 200 effective coverage, cause the damage on surface, effective coverage; When distance between described first border 221 and the second boundary 222 is too small, then described extension 211 is too small with the contact area of substrate 200, and the support force that pad 201 basad 200 is provided is not enough; When distance between described first border 221 and the second boundary 222 is within the scope of 2.5 millimeters ~ 3 millimeters, namely can ensure that described extension 211 basad 200 can provide enough large support force, can prevent again described extension 211 from entering distance between substrate 200 excessive and touch the effective coverage of substrate 200, thus damage is caused on the surface, effective coverage that efficiently avoid the 211 pairs of substrates 200 of described extension simultaneously.
In the present embodiment, the thickness of described pad 201 is 300 microns ~ 1000 microns.The thickness of described pad 201 determines the distance between two panels substrate 200; When the thickness of described pad 201 is too small, easily cause two panels substrate 200 to be bonded by adhesive-layer, be unfavorable for that follow-up carrying out vacuumizes and process for pressing; When the thickness of described pad 201 is excessive, make the spatial volume between two panels substrate 200 excessive, make follow-up vacuumizing and technology difficulty that the carrying out of process for pressing increases; And when the thickness of described pad is in 300 microns ~ 1000 micrometer ranges, namely can ensure to bond with viscose glue between two panels substrate, follow-up vacuumizing and the carrying out of process for pressing can be conducive to again simultaneously.
In the present embodiment, described extension 211 is positioned at the both sides of described protuberance 210, can not only make, between described extension 211 and substrate 200, there is larger contact area, described pad 201 basad 200 is made to provide larger holding power, the support force that described extension 211 basad 200 can also be made to provide is more even, can effectively avoid bonding between two panels substrate 200, therefore, described pad 201 has good isolation performance.
And the first border 221 length being positioned at the extension 211 of described protuberance 210 side is 40 millimeters ~ 120 millimeters.The preset length that the length on described first border 221 and described extension extend along substrate 200 border, and the length on described first border 221 determines the area of the extension 211 stretched between substrate 200; When the length on described first border 221 is long, described extension 211 can be caused to increase with the contact area on substrate 200 surface, then described extension 211 is easier causes damage to substrate 200 surface, especially causes the possibility of damage to increase to the surface, effective coverage of substrate 200; When the length on described first border 221 is too short, then the area that contacts with substrate 200 of described pad 201 is less, then the support force that provides of described pad 201 basad 200 is not enough, easily causes between two panels substrate 200 and is sticked together by adhesive-layer; When the length on described first border is within the scope of 40 millimeters ~ 120 millimeters, namely can ensure that described pad has enough large holding power to substrate, can ensure that again the damage of described pad to substrate effective coverage is less simultaneously.
In another embodiment, please refer to Fig. 5, in some pads 201, the extending part of part pad 201 is in the side of described protuberance 210.And, and the first border 221 length of described extension 211 is 40 millimeters ~ 120 millimeters, the first border 221 length being namely positioned at the extension 211 of described protuberance 210 side is 20 meters ~ 60 millimeters.
In Figure 5, the quantity of fixture 202 is 2, and the quantity of pad 201 is 3; In described 3 pads 201,1 pad 201 is in the side of two fixtures 202, and the extension 211 of this pad 201 extends to the both sides of described protuberance 210; In described 3 pads 201, all the other 2 pads are positioned at the opposite side of two fixtures 202, and the extension 211 of these two pads 201 is all positioned at the side of protuberance 210, and the extension 211 of these two pads 201 all extends to the direction of described fixture 202.
Described extension 211 is only positioned at the side of described protuberance 210, described extension 211 can be made when being enough to support two panels substrate 200 and being mutually isolated, reduce the contact on the surface, effective coverage of described extension 211 and substrate 200, thus avoid causing damage to the surface, effective coverage of substrate 200, ensure with the performance of semiconductor device of the substrate of institute's bonding formation good with this.And because described extension 211 all extends to the direction of fixture 202, described extension 211 is more conducive to dispersive pressure in the process of substrate bonding, makes two panels substrate 200 uniform force, then the clamping of described fixture 202 is more stable.
In the present embodiment, the quantity of described fixture 202 is 2, and described fixture 202 is positioned at the two ends of substrate 200 diameter.Please refer to Fig. 6, Fig. 6 is the partial schematic diagram of fixture 202, described fixture 202 comprises clamp base 230, fixture body 231 and clamp head 232, described fixture body 231 is perpendicular to substrate 200 surface, described clamp base 230 and clamp head 232 are connected with fixture body 231 two ends respectively, and described clamp base 230 and clamp head 232 are parallel to substrate 200 surface.Wherein, described clamp base 230 is for bearing basement 200, and described clamp head 232, for substrate 200 surface contact with upper strata, makes two panels substrate 200 can interfix after contraposition; Described fixture body 231, for connecting and fixing the clamp head 232 at two ends, makes clamp head 232 can clamp two panels substrate 200.Described fixture body 231 has bearing with the junction of described clamp base 230, and described clamp head 232 and described fixture body 231 can be dynamically connected relative to described clamp base 230.In the present embodiment, the quantity of described fixture 202 is the quantity of described clamp head 232 and fixture body 231.
Please refer to Fig. 7, the substrate bonding apparatus of the present embodiment also comprises the upper cover plate 203 and bearing basement 204 that are oppositely arranged in chamber, and the surface of described upper cover plate 203 and bearing basement 204 is parallel to substrate 200 surface.Described upper cover plate 203 and bearing basement 204 are arranged in opposite directions, and contact with two panels substrate 200 surface respectively, by applying pressure with described upper cover plate 203 to described bearing basement 204, and can the substrate 200 that overlaps of two panels described in pressing.It should be noted that, fixture 202 as shown in Figure 6, after clamp base 200, is fixed in described bearing basement 204.
In addition, the substrate bonding apparatus of the present embodiment also comprises chamber 205, and described substrate 200, pad 201, fixture 202, upper cover plate 203 and bearing basement 204 can carry out vacuumizing and process for pressing after being placed in described chamber 205.
To sum up, in the present embodiment, the pad for isolating substrate has protuberance and extension, and described protuberance extends to beyond basal edge, for being connected with transmission mechanism; And described extension is used for being placed between two panels substrate and isolates.Because described extension starts to extend predeterminable range along the edge of substrate from described protuberance, the area that described extension is contacted with substrate is comparatively large, thus enables described pad provide larger support force to substrate; Concrete, described extension comprises the contact-making surface for contacting substrate surface, described contact-making surface comprises the first border and the second boundary, described first border is the arc corresponding to substrate girth, described the second boundary is parallel to the first border, and described the second boundary is less to the distance in the substrate center of circle than the first border, therefore, the contact area of described contact-making surface and substrate is larger.Because described pad can provide larger support force to substrate, and fixture can be disperseed to act on the pressure of upper and lower two substrate surfaces, therefore, before carrying out pressing, two panels substrate can be avoided to be bonded by viscose glue, therefore, then follow-uply the region between two panels substrate can be made completely to be evacuated, thus make the effect improved of process for pressing.And after pressing, the part surface of two panels substrate can be avoided to there will be glue-free phenomenon, the part surface between two panels substrate can also be avoided to occur glue phenomenon of overflowing.Therefore, described substrate bonding apparatus can make bonding after substrate surface pattern improve, the reliability of formed semiconductor device is improved.
Accordingly, the embodiment of the present invention also provides a kind of substrate bonding method, and Fig. 8 to Figure 13 is the structural representation of the substrate bonding process of the embodiment of the present invention.
Please refer to Fig. 8, provide the first substrate 301, described first substrate 301 has relative first surface 311 and second surface 312; Adhesive-layer 302 is formed at the first surface 311 of the first substrate 301.
In the present embodiment; described first substrate 301 is for carrying out bonding with follow-up the second substrate being formed with image sensing device; described first substrate 301 is except the image sensing device that protection in subsequent technique is formed at the second substrate surface; also for the formation of the light transmitting shell of the described graphical sensory device of protection; therefore, described first substrate 301 is transparent substrates.In the present embodiment, the material of described first substrate 301 is glass.In other embodiments, the material of described first substrate 301 can also be the polymeric material that epoxy resin etc. is transparent.
In another embodiment, described first substrate can also be silicon base, silicon-Germanium base, silicon carbide substrate, silicon-on-insulator (SOI) substrate, germanium on insulator (GOI) substrate or III-V substrate (such as gallium nitride substrate or gallium arsenide substrate etc.).
In the present embodiment, before the first surface 311 of the first substrate 301 forms adhesive-layer 302, divider wall (not shown) is formed at the first surface 311 of described first substrate 301, opening (not shown) is formed between adjacent divider wall, and it is the position of described opening, corresponding with the graphical sensory device position on the second substrate the 3rd surface of follow-up contraposition, the opening that described divider wall is formed can surround described image sensing device, makes described first substrate 301 can form the cavity surrounding described image sensing device; And described adhesive-layer 302 is formed at the surface of described divider wall.
In the present embodiment, the edge of described first substrate 301 has the first inactive area, and the second basal edge of follow-up contraposition has the second inactive area, and the position of described first inactive area and the second inactive area, shape and size are mutually corresponding.Described first inactive area is 3 millimeters ~ 4 millimeters along the diametric width of the first substrate 301.
Described adhesive-layer 302 can cover the first surface 311 of the first substrate 301 described in the first surface 311 of described first substrate 301 or cover part completely; The material of described adhesive-layer 302 can be the sticking polymeric material of tool; The formation process of described adhesive-layer 302 comprises coating process, and described coating process comprises silk-screen printing technique or plastic roll technique.Described adhesive-layer 302, in bonding technology, fixes the second substrate of described first substrate 301 and follow-up contraposition.In other embodiments, described coating process can also be spin coating proceeding or spraying coating process.
Please refer to Fig. 9 and Figure 10, Figure 10 is the plan structure schematic diagram of Fig. 9, Fig. 9 is the end view of Figure 10 along CC ' secant direction, after the first surface 311 of the first substrate 301 forms adhesive-layer 302, at the first surface 311 of described first substrate 301, described some pads 303 are set, and the coincident of the first border of described some pads 303 and the first substrate 301, described protuberance extends to beyond the edge of described first substrate 301.
Described pad 303 is identical with the pad 201 described in previous embodiment, as shown in Fig. 3 to Fig. 7, does not repeat at this.
In the present embodiment, described adhesive-layer 302 covers the first surface 311 of described first substrate 301 completely, then described pad 303 is positioned at described adhesive-layer 302 surface.In other embodiments, described adhesive-layer is only positioned at the first surface of part first substrate, then described pad can be located immediately at the first surface of described first substrate.
In the present embodiment, the edge of described first substrate 301 has the first inactive area, after the first surface 311 of described first substrate 301 arranges described some pads 303, the extending part of described pad 303 is in the corresponding region of described first inactive area and the second inactive area.The contact-making surface that described extension contacts with the surperficial adhesive-layer 302 of the first substrate 301 has the first border 221 (please refer to Fig. 5) and the second boundary 222 (please refer to Fig. 5) that are parallel to each other, and the distance between described first border 221 and the second boundary 222 is 2.5 millimeters ~ 3 millimeters, therefore, described pad 303 is positioned at the first inactive area of the first substrate 301, described pad 303 can not contact the effective coverage of the first substrate 301, thus avoids the surface of described pad 303 to the first substrate 301 and cause damage.
And the position of the second inactive area of the second substrate of follow-up contraposition and described first inactive area, shape and size are corresponding, therefore described pad 303 is also positioned at described second inactive area, then described pad 303 can not cause damage to the image sensing device of the second substrate surface, and the image sensing device yield formed after can ensureing follow-up bonding improves, reliability improves.
Please refer to Figure 11 and Figure 12, Figure 12 is the plan structure schematic diagram of Figure 11, and Figure 11 is the cross-sectional view of Figure 12 along CC ' direction, provides the second substrate 304, and described second substrate 304 has the 3rd relative surface 341 and the 4th surface 342; After the first surface 311 of described first substrate 301 arranges described some pads 303, alignment process is adopted to make the 3rd surface 341 of described second substrate 304 be positioned at described pad 303 surface, 3rd surface 341 of described second substrate 304 is relative with the first surface 311 of the first substrate 301, and the coincident of described second substrate 304 and the first substrate 301.
Described second substrate 304 is silicon base, silicon-Germanium base, silicon carbide substrate, silicon-on-insulator (SOI) substrate, germanium on insulator (GOI) substrate or III-V substrate (such as gallium nitride substrate or gallium arsenide substrate etc.).In the present embodiment, 3rd surface 341 of described second substrate 304 has graphical sensory device, the position of described graphical sensory device is corresponding with the aperture position between the divider wall being formed at the first substrate 301 first surface 311, image sensing device after making contraposition can be positioned at described opening, then described first substrate 301 can form the cavity surrounding described imageing sensor.
Described alignment process makes described first substrate 301 and the second substrate 304 overlap and coincident, and, the semiconductor structure that described first substrate 301 first surface 311 is formed, to aim at the semiconductor structure position that the second substrate 304 the 3rd surface 341 is formed.In the present embodiment, described alignment process makes the position being formed at the image sensing device that the opening between the divider wall of first surface 311 is formed with the 3rd surface 341 aim at.
In the present embodiment, the thickness of described pad 303 is 300 microns ~ 1000 microns, then after described alignment process, the extending part of pad 303 is between described first substrate 301 and the second substrate 304, and the distance between the 3rd surface 341 of first surface 311 to the second substrate 304 of described first substrate 301 is 300 microns ~ 1000 microns.
In the present embodiment, the edge of described second substrate 304 has the second inactive area, and described second inactive area surrounds the effective coverage of the second substrate 304, and described second inactive area is 3 millimeters ~ 4 millimeters along the diametric width of the second substrate 304.After contraposition is carried out in described second substrate 304 and the first substrate 301, position, the shape and size of described second inactive area and described first inactive area are corresponding.Because the extending part of described pad 303 is in the first inactive area of the first substrate 301, then after described alignment process, the extension of described pad 303 is also positioned at the second inactive area of the second substrate 304, then described pad 303 can not cause damage to the image sensing device on the second substrate 304 the 3rd surface 341, can ensure follow-up after bonding technology, the image sensing device yield raising formed, reliability strengthen.
Please refer to Figure 13, after described alignment process, fixture 305 is set in described first substrate 301 and the second substrate 304 edge, described first substrate 301 and the second substrate 304 are fixed.
Described fixture 305 comprises fixture body and clamp head, described fixture body is perpendicular to the sidewall surfaces of the first substrate 301 and the second substrate 304, described clamp head is connected with fixture body two ends, and described clamp head is parallel to the first substrate 301 and the second substrate 304 surface.In the present embodiment, the quantity of described fixture 305 is 2, and described 2 fixtures are arranged at two sections along described first substrate 301 and the second substrate 304 diameter respectively.
After described first substrate 301 and the second substrate 304 edge arrange fixture, the clamp head being positioned at fixture body two ends contacts with the second surface 312 of the first substrate 301 and the 4th surface 342 of the second substrate 304 respectively, with this fixing described first substrate 301 and the second substrate 304.
After described first substrate 301 and the second substrate 304 edge arrange fixture 305, described first substrate 301, second substrate 304, pad 303 and fixture 305 are sent in chamber, has carried out vacuumizing and process for pressing.Wherein, the surface of upper cover plate and bearing basement is contacted with the second surface 312 of the first substrate 301 and the 4th surface 342 of the second substrate 304 respectively, pressure is applied, with the first substrate 301 and the second substrate 304 described in pressing to described bearing basement by described upper cover plate.
To sum up, in the present embodiment, after the first substrate surface forms adhesive-layer, arrange some pads at the first surface of described first substrate, described pad is namely for isolating described first substrate and follow-up the second substrate carrying out contraposition.And described pad has protuberance and extension, described protuberance extends to beyond the edge of the first substrate, for being connected with transmission mechanism; And described extension is for isolating the first substrate and the second substrate.First border of described some pads and the coincident of the first substrate, namely described extension can start to extend predeterminable range along the edge of the first substrate from described protuberance, the area that described extension is contacted with the first substrate and the second substrate is comparatively large, thus enables described pad provide larger support force to the second substrate.Because described pad can provide larger support force to the first substrate and the second substrate, and the pressure be subject to can be made to be dispersed, therefore, before carrying out pressing, the first substrate and the second substrate can be avoided to be bonded by adhesive-layer, be conducive to follow-uply vacuumizing the region between the first substrate and the second substrate, thus make the effect improved of process for pressing.And after pressing, between the first substrate and the second substrate, there will not be glue-free phenomenon, the part surface between the first substrate and the second substrate can also be avoided to occur glue phenomenon of overflowing.Therefore, described substrate bonding apparatus can make bonding after the first substrate and the second substrate surface topography improve, the reliability of formed semiconductor device is improved.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (21)
1. a substrate bonding apparatus, is characterized in that, comprising:
Some pads, described some pads are uniformly distributed along the edge of substrate, described some pads are positioned in the plane corresponding with substrate surface, described pad comprises interconnective protuberance and extension, described protuberance extends to beyond the edge of substrate, described extension starts to extend preset length along the edge of substrate from described protuberance, described extension comprises the contact-making surface for contacting substrate surface, described contact-making surface comprises the first border and the second boundary, described first border is the arc corresponding to substrate girth, described the second boundary is parallel to the first border, and described the second boundary is less to the distance in the substrate center of circle than the first border,
Some fixtures, described some fixtures are uniformly distributed along substrate girth, and described fixture is between adjacent pads.
2. substrate bonding apparatus as claimed in claim 1, it is characterized in that, the quantity of described pad is more than or equal to the quantity of described fixture.
3. substrate bonding apparatus as claimed in claim 1, is characterized in that, the coincident of described first border and substrate.
4. substrate bonding apparatus as claimed in claim 1, it is characterized in that, described extending part is in the one or both sides of described protuberance.
5. substrate bonding apparatus as claimed in claim 1, it is characterized in that, the first boundary length of described extension is 40 millimeters ~ 120 millimeters.
6. substrate bonding apparatus as claimed in claim 1, it is characterized in that, the distance between described first border and the second boundary is 2.5 millimeters ~ 3 millimeters.
7. substrate bonding apparatus as claimed in claim 1, it is characterized in that, the thickness of described pad is 300 microns ~ 1000 microns.
8. substrate bonding apparatus as claimed in claim 1, it is characterized in that, the quantity of described fixture is 2 ~ 5.
9. substrate bonding apparatus as claimed in claim 8, it is characterized in that, when the quantity of described fixture is 2, described fixture is positioned at the two ends of basal diameter.
10. substrate bonding apparatus as claimed in claim 1, it is characterized in that, also comprise: the upper cover plate be oppositely arranged and bearing basement, the surface of described upper cover plate and bearing basement is parallel to substrate surface; Chamber, is fixed with the pad of substrate, fixture, upper cover plate and bearing basement and is placed in described chamber, for carrying out substrate bonding technology.
11. substrate bonding apparatus as claimed in claim 10, it is characterized in that, described fixture comprises clamp base, fixture body and clamp head, described fixture body is perpendicular to substrate surface, described clamp base and clamp head are connected with fixture body two ends respectively, and described clamp base and clamp head are parallel to substrate surface; Described fixture body and described clamp base can be dynamically connected.
12. 1 kinds of substrate bonding methods adopting the substrate bonding apparatus as described in any one of claim 1 to 11 to carry out, is characterized in that, comprising:
There is provided the first substrate, described first substrate has relative first surface and second surface;
Adhesive-layer is formed at the first surface of the first substrate;
After the first surface of the first substrate forms adhesive-layer, described some pads are set at the first surface of described first substrate, and the first border of described some pads and the coincident of the first substrate, described protuberance extends to beyond the edge of described first substrate;
There is provided the second substrate, described second substrate has the 3rd relative surface and the 4th surface;
After the first surface of described first substrate arranges described some pads, alignment process is adopted to make the 3rd surface of described second substrate be positioned at described gasket surface, 3rd surface of described second substrate is relative with the first surface of the first substrate, and the coincident of described second substrate and the first substrate;
After described alignment process, fixture is set in described first substrate and the second basal edge, described first substrate and the second substrate are fixed.
13. substrate bonding methods as claimed in claim 12, it is characterized in that, described first substrate is transparent substrates; 3rd surface of described second substrate has graphical sensory device.
14. substrate bonding methods as claimed in claim 13, it is characterized in that, before the first surface of the first substrate forms adhesive-layer, divider wall is formed at the first surface of described first substrate, opening is formed between adjacent divider wall, and the position of described opening, corresponding with the graphical sensory device position on the 3rd surface of the second substrate.
15. substrate bonding methods as claimed in claim 13, it is characterized in that, the material of described first substrate comprises glass.
16. substrate bonding methods as claimed in claim 12, is characterized in that, after described alignment process, the first surface of described first substrate to the second substrate the 3rd surface between distance be 300 microns ~ 1000 microns.
17. substrate bonding methods as claimed in claim 12, it is characterized in that, described fixture comprises fixture body and clamp head, described fixture body is perpendicular to the first substrate and the second substrate surface, described clamp head is connected with fixture body two ends, and described clamp head is parallel to the first substrate and the second substrate surface; After described first substrate and the second basal edge arrange fixture, the clamp head being positioned at fixture body two ends contacts with the second surface of the first substrate and the 4th surface of the second substrate respectively.
18. substrate bonding methods as claimed in claim 12, is characterized in that, also comprise: after described first substrate and the second basal edge arrange fixture, described first substrate, the second substrate, pad and fixture are sent in chamber; The surface of upper cover plate and bearing basement is contacted with the second surface of the first substrate and the 4th surface of the second substrate respectively, and described upper cover plate applies pressure, with the first substrate described in pressing and the second substrate to described bearing basement.
19. substrate bonding methods as claimed in claim 12, it is characterized in that, the edge of described first substrate has the first inactive area, and the edge of described second substrate has the second inactive area, and the position of described first inactive area and the second inactive area and size mutually corresponding; After the first surface of described first substrate arranges described some pads, the extending part of described pad is in the corresponding region of described first inactive area and the second inactive area.
20. substrate bonding methods as claimed in claim 19, is characterized in that, described first inactive area is 3 millimeters ~ 4 millimeters along the width in the first basal diameter direction; Described second inactive area is 3 millimeters ~ 4 millimeters along the width in the second basal diameter direction.
21. substrate bonding methods as claimed in claim 12, is characterized in that, described first substrate or the second substrate are silicon base, silicon-Germanium base, silicon carbide substrate, silicon-on-insulator substrate, germanium on insulator substrate or III-V substrate.
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