CN104332559A - Low operation voltage organic field effect transistor and preparation method thereof - Google Patents
Low operation voltage organic field effect transistor and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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Abstract
The invention discloses a low operation voltage organic field effect transistor and a preparation method thereof. The low operation voltage organic field effect transistor comprises a substrate with an electrode leading wire, a metal gate electrode formed by patterned metal which is deposited on the substrate, low in resistance, and communicated with the electrode leading wire on the substrate, a gate medium layer formed on the metal gate electrode, an organic semiconductor material layer formed on the gate medium layer, and a graphical source electrode and a graphical drain electrode which are formed on the organic semiconductor material layer through mask plates and cover the side face of the organic semiconductor material layer, the side face of the gate medium layer and the surface of a portion of the substrate, which is exposed, wherein the gate medium layer comprises a plasma oxidation layer and a single molecule self-assembly material layer, the plasma oxidation layer covers the surface and the side face of the metal gate electrode, and the single molecule self-assembly material layer is formed on the plasma oxidation layer. By using the preparation method of the low operation voltage organic field effect transistor, work voltage of an existing organic field effect transistor is reduced, and the low power consumption and low operation voltage organic field effect transistor is obtained.
Description
Technical field
The present invention relates to a kind of low operating voltage organic field effect tube and preparation method thereof, belong to micro-electronic manufacturing and organic field effect tube technical field.
Background technology
Along with deepening continuously of information technology, electronic product has entered each link of people's life and work; The demand of people to low cost, flexibility, low weight, portable electronic product is increasing in daily life; Traditional device based on inorganic semiconductor material and circuit are difficult to meet these requirements in technology and cost, and the microelectric technique based on organic semiconducting materials that therefore can realize these characteristics obtains people and more and more pays close attention under this trend.
Organic field effect tube is as the basic device of organic circuit, and the performance of its performance to circuit plays conclusive effect.Generally speaking, the operating voltage of organic field effect tube is volt even up to a hundred up to tens volts, limits the possibility that they move towards practical application.The organic field effect tube of low operating voltage is the necessary element realizing low operating voltage organic integrated circuits.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of low operating voltage organic field effect tube and preparation method thereof, to reduce the operating voltage of organic field effect tube, realize the organic field effect tube of low-power consumption low operating voltage (being less than 3V).
(2) technical scheme
For achieving the above object, the invention provides a kind of low operating voltage organic field effect tube, comprising: substrate, there is contact conductor; Metal gate electrode, is formed, with the contact conductor conducting of substrate at deposited on substrates and the low-resistance metal of patterning; Gate dielectric layer, is formed on metal gate electrode, and comprise plasma oxide layer and unimolecule self-assembled material layer, wherein plasma oxide layer is covered in surface and the side of gate electrode, and unimolecule self-assembled material layer is formed on plasma oxide layer; Organic semiconductor material, is formed on gate dielectric layer; And patterned source electrode and drain electrode, be formed on organic semiconductor material by mask plate, and on the side being covered in organic semiconductor material and gate dielectric layer and the substrate surface exposed.
In such scheme, the material that described substrate adopts is silicon chip, plastic film or glass.
In such scheme, the metal material that described metal gate electrode adopts is aluminium, titanium or nickel, can form the oxide layer of insulation property after oxidized; The thickness of metal gate electrode layer is 23nm ~ 30nm.
In such scheme, in described gate dielectric layer, the thickness of plasma oxide layer is 2nm ~ 4nm, the thickness of unimolecule self-assembled material layer is 2nm ~ 3nm, unimolecule self-assembled material layer has the material in plasma oxide layer surface self-organization ability, comprise alkyl phosphonic acid (OPA) or alkylsiloxane (OTS), method of modifying is solution infusion method or vapour deposition process.
In such scheme, described organic semiconductor material adopts P type semiconductor material, N type semiconductor material, PN bilayer or mixed semiconductor's material, and thickness is 25nm ~ 50nm.
In such scheme, described organic semiconductor material adopts the semi-conducting material with field effect behavior, comprises high molecular polymer, organic molecule and relevant mixed system, and its thin film-forming method adopts printing, vacuum moulding machine, drips film or LB mode.
In such scheme, described patterned source electrode and drain electrode, at least formed by following low electrical resistant material: W, Al, Cu, Au, Ag, Pt, Ru, Ti, Ta, Pb, Co, Mo, Ir or Ni, or conductive metallic compound TiN, TaN, IrO
2, ITO or IZO, thickness is 40nm ~ 80nm, and channel length is 2 microns ~ 100 microns.
For achieving the above object, present invention also offers a kind of preparation method of low operating voltage organic field effect tube, comprising: select substrate; At deposited on substrates and the low-resistance metal of patterning, form metal gate electrode; Metal gate electrode is prepared plasma oxide layer and unimolecule self-assembled material layer successively, and form gate dielectric layer, wherein plasma oxide layer is covered in surface and the side of gate electrode, and unimolecule self-assembled material layer is formed on plasma oxide layer; Gate dielectric layer prepares organic semiconductor material; And on organic semiconductor material, prepare patterned source electrode and drain electrode by mask plate, on the side that this patterned source electrode and drain electrode are covered in organic semiconductor material and gate dielectric layer and the substrate surface that exposes.
In such scheme, the material that described substrate adopts is silicon chip, plastic film or glass, with isopropyl alcohol, and acetone ultrasonic cleaning, deionized water rinsing, and dry up or drying box oven dry through nitrogen.
In such scheme, the metal material that described metal gate electrode adopts is aluminium, titanium or nickel, thickness is 23nm ~ 30nm, and the deposition of metal gate electrode is realized by electron beam evaporation, sputtering or thermal evaporation, and the patterning of metal gate electrode is realized by mask plate or photoetching method.
In such scheme, the preparation of described gate dielectric layer, that the mode that using plasma is oxidized prepares layer of metal oxide film as plasma oxide layer on metal gate electrode surface, then monomolecular solution is immersed, on plasma oxide layer, prepare unimolecule self-assembled material layer by the mode left standstill, or prepare unimolecule self-assembled material layer by the mode of vapour deposition on plasma oxide layer surface.
In such scheme, the mode of described using plasma oxidation prepares plasma oxide layer, and plasma is oxygen plasma, and nitrogen or argon gas are assist gas, and oxidization time and power are: 300 watts 3 minutes, or 150 watts 5 minutes.
In such scheme, describedly on gate dielectric layer, prepare organic semiconductor material, adopt the mode of organic semiconducting materials film forming to realize, thin film-forming method adopts printings, vacuum moulding machine, droplet film or LB mode.
In such scheme, describedly on organic semiconductor material, prepare patterned source electrode and drain electrode by mask plate, be carry out plated metal by electron beam evaporation, sputtering or thermal evaporation method, and form patterned source electrode and drain electrode by mask plate.
(3) beneficial effect
As can be seen from technique scheme, the present invention has and has following characteristics and advantage:
1, low operating voltage organic field effect tube provided by the invention and preparation method thereof, the thickness of insulating barrier is at 4nm ~ 6nm, leakage current is in the magnitude of 10-11, the combination with flexible substrate can be accomplished like this, reduce the operating voltage of organic field effect tube, the organic field effect tube of preparation normally can work under the voltage of 3V or below 3V, realizes the organic field effect tube of low-power consumption low operating voltage.
2, low operating voltage organic field effect tube provided by the invention and preparation method thereof, the acquisition of gate dielectric layer is obtained by the in-situ oxidation of gate electrode, this approach simplifies technique prepared by device, when device is integrated, the via hole avoided in organic integrated circuits prepares this difficult point.
3, low operating voltage organic field effect tube provided by the invention and preparation method thereof, the organic field effect tube of preparation normally can work under the voltage of 3V, can be used for realizing the integrated of low-power consumption low operating voltage organic integrated circuits, realize the organic integrated circuits of low operating voltage Grazing condition, expand the application prospect of organic field effect tube.
Accompanying drawing explanation
In order to further illustrate content of the present invention, below in conjunction with accompanying drawing and embodiment, the present invention is described in detail,
Fig. 1 is the schematic diagram of the low operating voltage organic field effect tube according to the embodiment of the present invention;
Fig. 2 is the structural formula of the organic semiconducting materials that the organic semiconductor material of low operating voltage organic field effect tube in Fig. 1 adopts;
Fig. 3 is the method flow diagram preparing low operating voltage organic field effect tube according to the embodiment of the present invention.
Fig. 4 is transfer based on the low operating voltage organic field effect tube of P type semiconductor material DNTT and curve of output;
Fig. 5 is transfer based on the low operating voltage organic field effect tube of N type semiconductor material PDI-8CN2 and curve of output;
Fig. 6-1 to Fig. 6-5 is the process charts preparing low operating voltage organic field effect tube according to the embodiment of the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is the schematic diagram of low operating voltage organic field effect tube provided by the invention, this low operating voltage organic field effect tube comprises substrate 1, metal gate electrode 2, gate dielectric layer, organic semiconductor material 5 and patterned source electrode 6 and drain electrode 7, wherein: substrate 1 has contact conductor, it should be noted that, because this contact conductor overlaps with drain electrode in FIG, therefore do not indicate this contact conductor in FIG; Metal gate electrode 2 deposits low-resistance metal with patterning on substrate 1 and formed, with the contact conductor conducting of substrate 1; Gate dielectric layer is formed on metal gate electrode 2, comprise plasma oxide layer 3 and unimolecule self-assembled material layer 4, wherein plasma oxide layer 3 is covered in surface and the side of gate electrode 2, and unimolecule self-assembled material layer 4 is formed on plasma oxide layer 3; Organic semiconductor material 5 is formed on gate dielectric layer; Patterned source electrode 6 and drain electrode 7 are formed on organic semiconductor material 5 by mask plate, and on the side being covered in organic semiconductor material 5 and gate dielectric layer and substrate 1 surface of exposing.
In Fig. 1, the material that substrate 1 adopts is silicon chip, plastic film or glass etc.The metal material that metal gate electrode 2 adopts is aluminium, titanium or nickel etc., and it can form the oxide layer of insulation property after oxidized; The thickness of metal gate electrode layer 2 is 23nm ~ 30nm.In gate dielectric layer, the thickness of plasma oxide layer 3 is 2nm ~ 4nm, the thickness of unimolecule self-assembled material layer 4 is 2nm ~ 3nm, unimolecule self-assembled material layer 4 has the material in plasma oxide layer surface self-organization ability, comprise alkyl phosphonic acid (OPA) or alkylsiloxane (OTS), method of modifying is solution infusion method or vapour deposition process etc.
Organic semiconductor material 5 adopts P type semiconductor material, N type semiconductor material, PN bilayer or mixed semiconductor's material, and thickness is 25nm ~ 50nm.Or, organic semiconductor material 5 adopts the semi-conducting material with field effect behavior, comprise high molecular polymer, organic molecule and relevant mixed system etc., Fig. 2 is the structural formula of the organic semiconducting materials that the organic semiconductor material of low operating voltage organic field effect tube in Fig. 1 adopts, wherein, Fig. 2 (a) is P type semiconductor material DNTT, Fig. 2 (b) is N type semiconductor material PDI-8CN2.Its thin film-forming method adopts printing, vacuum moulding machine, drips film or LB mode etc.
Patterned source electrode 6 and drain electrode 7, at least formed by following low electrical resistant material: W, Al, Cu, Au, Ag, Pt, Ru, Ti, Ta, Pb, Co, Mo, Ir or Ni, or conductive metallic compound TiN, TaN, IrO
2, ITO or IZO, thickness is 40nm ~ 80nm, and channel length is 2 microns ~ 100 microns.
Based on the schematic diagram of the low operating voltage organic field effect tube shown in Fig. 1, Fig. 3 shows the method flow diagram preparing low operating voltage organic field effect tube according to the embodiment of the present invention, and the method comprises the following steps:
Step 301: select substrate;
Step 302: at deposited on substrates and the low-resistance metal of patterning, forms metal gate electrode;
Step 303: prepare plasma oxide layer and unimolecule self-assembled material layer on metal gate electrode successively, form gate dielectric layer, wherein plasma oxide layer is covered in surface and the side of gate electrode, and unimolecule self-assembled material layer is formed on plasma oxide layer;
Step 304: prepare organic semiconductor material on gate dielectric layer;
Step 305: prepare patterned source electrode and drain electrode by mask plate on organic semiconductor material, on the side that this patterned source electrode and drain electrode are covered in organic semiconductor material and gate dielectric layer and the substrate surface that exposes.
In a preferred embodiment of the invention, the material that substrate described in step 301 adopts is silicon chip, plastic film or glass, with isopropyl alcohol, and acetone ultrasonic cleaning, deionized water rinsing, and dry up or drying box oven dry through nitrogen.
In a preferred embodiment of the invention, the metal material that metal gate electrode described in step 302 adopts is aluminium, titanium or nickel etc., thickness is 23nm ~ 30nm, the deposition of metal gate electrode is realized by electron beam evaporation, sputtering or thermal evaporation, and the patterning of metal gate electrode is realized by mask plate or photoetching method.
In a preferred embodiment of the invention, the preparation of gate dielectric layer described in step 303, that the mode that using plasma is oxidized prepares layer of metal oxide film as plasma oxide layer on metal gate electrode surface, then monomolecular solution is immersed, on plasma oxide layer, prepare unimolecule self-assembled material layer by the mode left standstill, or prepare unimolecule self-assembled material layer by the mode of vapour deposition on plasma oxide layer surface.Preferably, the mode of using plasma oxidation prepares plasma oxide layer, plasma is oxygen plasma, nitrogen or argon gas are assist gas, oxidization time and power are: 300 watts 3 minutes, or 150 watts 5 minutes, oxygen plasma is utilized to bombard metal gate electrode, oxide layer is formed then on metal gate electrode surface and side, gate electrode through plasma bombardment is entered in monomolecular solution and soak 16 hours, or the surface of gate medium is carried out to the self-organizing modification of monolayer under the environment of vacuum drying oven, unimolecule self-assembled material layer is formed on plasma oxide layer.
In a preferred embodiment of the invention, prepare organic semiconductor material described in step 304 on gate dielectric layer, adopt the mode of organic semiconducting materials film forming to realize, thin film-forming method adopts printing, vacuum moulding machine, drips film or LB mode.
In a preferred embodiment of the invention, on organic semiconductor material, patterned source electrode and drain electrode is prepared by mask plate described in step 305, be carry out plated metal by electron beam evaporation, sputtering or thermal evaporation method, and form patterned source electrode and drain electrode by mask plate.
Implement 1
Structural representation if Fig. 1 is low operating voltage organic field effect tube of the present invention: be followed successively by substrate 1, metal gate electrode 2, plasma oxide layer 3, unimolecule self-assembled material layer 4, organic semiconductor material 5 and patterned source electrode 6 and drain electrode 7 from bottom to top.Wherein dielectric substrate is the long silicon chip having the silica of 300nm in surface, metal gate electrode is aluminium, the aluminum oxide film of plasma oxide layer 3 for being formed by plasma oxidation, unimolecule self-assembled material layer 4 is octadecylphosphonic acid, organic semiconductor material 5 is the DNTT of P type, and source-drain electrode is the gold that 50nm is thick.
The preparation method of this embodiment is as follows:
Step 1, as in Figure 6-1, evaporation layer of metal aluminium (25nm) on an insulating substrate, wherein the evaporation rate of metallic aluminium is
the patterning of aluminium lamination is carried out by the mode of mask plate.
Step 2, as in fig. 6-2, bombards metal gate electrode with oxygen plasma, forms layer of oxide layer on its surface.Wherein the plasma bombardment time is 3 minutes, and power is 300 watts.
Step 3, as shown in Fig. 6-3, enters the gate electrode through plasma bombardment in the 5mM solution of octadecylphosphonic acid and soaks 16 hours,
Step 4, as shown in Fig. 6-4, utilize the P type organic semiconducting materials DNTT that vacuum-deposited mode organic semiconductor deposition 30nm is thick, evaporation rate is
Step 5, as shown in Fig. 6-5, prepare the gold of 50nm as source-drain electrode by thermal evaporation, evaporation rate is
by mask plate, patterning is carried out to source-drain electrode.
Fig. 4 (a) and Fig. 4 (b) show transfer based on the low operating voltage organic field effect tube of P type semiconductor material DNTT and curve of output.Can find out that device normally works under the low-voltage of-2.5V, the ON state current of device is 10
-5a, off-state current is 10
-11the test condition of A, Fig. 4 (a) device is: grid voltage is 0 ~-2.5V, and stepping is-0.5V, and source-drain voltage is scan pattern, and stepping is 0.02V.The test condition of Fig. 4 (b) device is: source-drain voltage remains on-3V, and grid voltage is 1V ~-2.5V scan pattern, and stepping is 0.02V.
Embodiment 2
By the preparation of embodiment 1, be uniquely the semi-conducting material PDI-8CN2 of N-type unlike organic semiconductor material.Fig. 5 (a) and Fig. 5 (b) show transfer based on the low operating voltage organic field effect tube of N type semiconductor material PDI-8CN2 and curve of output.Can find out that device normally works under the low-voltage of 2V, the ON state current of device is 10
-6a, off-state current is 10
-11the test condition of A, Fig. 5 (a) device is: grid voltage is 0 ~ 2V, and stepping is 0.5V, and source-drain voltage is scan pattern, and stepping is 0.02V.The test condition of Fig. 5 (b) device is: source-drain voltage remains on-2V, and grid voltage is-1V ~ 2V scan pattern, and stepping is 0.02V.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (14)
1. a low operating voltage organic field effect tube, is characterized in that, comprising:
Substrate, has contact conductor;
Metal gate electrode, is formed, with the contact conductor conducting of substrate at deposited on substrates and the low-resistance metal of patterning;
Gate dielectric layer, is formed on metal gate electrode, and comprise plasma oxide layer and unimolecule self-assembled material layer, wherein plasma oxide layer is covered in surface and the side of gate electrode, and unimolecule self-assembled material layer is formed on plasma oxide layer;
Organic semiconductor material, is formed on gate dielectric layer; And
Patterned source electrode and drain electrode, be formed on organic semiconductor material by mask plate, and on the side being covered in organic semiconductor material and gate dielectric layer and the substrate surface exposed.
2. low operating voltage organic field effect tube according to claim 1, is characterized in that, the material that described substrate adopts is silicon chip, plastic film or glass.
3. low operating voltage organic field effect tube according to claim 1, is characterized in that, the metal material that described metal gate electrode adopts is aluminium, titanium or nickel, can form the oxide layer of insulation property after oxidized; The thickness of metal gate electrode layer is 23nm ~ 30nm.
4. low operating voltage organic field effect tube according to claim 1, it is characterized in that, in described gate dielectric layer, the thickness of plasma oxide layer is 2nm ~ 4nm, the thickness of unimolecule self-assembled material layer is 2nm ~ 3nm, unimolecule self-assembled material layer has the material in plasma oxide layer surface self-organization ability, and comprise alkyl phosphonic acid (OPA) or alkylsiloxane (OTS), method of modifying is solution infusion method or vapour deposition process.
5. low operating voltage organic field effect tube according to claim 1, is characterized in that, described organic semiconductor material adopts P type semiconductor material, N type semiconductor material, PN bilayer or mixed semiconductor's material, and thickness is 25nm ~ 50nm.
6. low operating voltage organic field effect tube according to claim 1, it is characterized in that, described organic semiconductor material adopts the semi-conducting material with field effect behavior, comprise high molecular polymer, organic molecule and relevant mixed system, its thin film-forming method adopts printing, vacuum moulding machine, drips film or LB mode.
7. low operating voltage organic field effect tube according to claim 1, it is characterized in that, described patterned source electrode and drain electrode, at least formed by following low electrical resistant material: W, Al, Cu, Au, Ag, Pt, Ru, Ti, Ta, Pb, Co, Mo, Ir or Ni, or conductive metallic compound TiN, TaN, IrO
2, ITO or IZO, thickness is 40nm ~ 80nm, and channel length is 2 microns ~ 100 microns.
8. a preparation method for low operating voltage organic field effect tube, is characterized in that, comprising:
Select substrate;
At deposited on substrates and the low-resistance metal of patterning, form metal gate electrode;
Metal gate electrode is prepared plasma oxide layer and unimolecule self-assembled material layer successively, and form gate dielectric layer, wherein plasma oxide layer is covered in surface and the side of gate electrode, and unimolecule self-assembled material layer is formed on plasma oxide layer;
Gate dielectric layer prepares organic semiconductor material; And
Organic semiconductor material prepares patterned source electrode and drain electrode by mask plate, on the side that this patterned source electrode and drain electrode are covered in organic semiconductor material and gate dielectric layer and the substrate surface that exposes.
9. the preparation method of low operating voltage organic field effect tube according to claim 8, is characterized in that, the material that described substrate adopts is silicon chip, plastic film or glass, with isopropyl alcohol, acetone ultrasonic cleaning, deionized water rinsing, and dry up or drying box oven dry through nitrogen.
10. the preparation method of low operating voltage organic field effect tube according to claim 8, it is characterized in that, the metal material that described metal gate electrode adopts is aluminium, titanium or nickel, thickness is 23nm ~ 30nm, the deposition of metal gate electrode is realized by electron beam evaporation, sputtering or thermal evaporation, and the patterning of metal gate electrode is realized by mask plate or photoetching method.
The preparation method of 11. low operating voltage organic field effect tubes according to claim 8, it is characterized in that, the preparation of described gate dielectric layer, that the mode that using plasma is oxidized prepares layer of metal oxide film as plasma oxide layer on metal gate electrode surface, then monomolecular solution is immersed, on plasma oxide layer, prepare unimolecule self-assembled material layer by the mode left standstill, or prepare unimolecule self-assembled material layer by the mode of vapour deposition on plasma oxide layer surface.
The preparation method of 12. low operating voltage organic field effect tubes according to claim 11, it is characterized in that, the mode of described using plasma oxidation prepares plasma oxide layer, plasma is oxygen plasma, nitrogen or argon gas are assist gas, oxidization time and power are: 300 watts 3 minutes, or 150 watts 5 minutes.
The preparation method of 13. low operating voltage organic field effect tubes according to claim 11, it is characterized in that, describedly on gate dielectric layer, prepare organic semiconductor material, adopt the mode of organic semiconducting materials film forming to realize, thin film-forming method adopts printing, vacuum moulding machine, drips film or LB mode.
The preparation method of 14. low operating voltage organic field effect tubes according to claim 11, it is characterized in that, describedly on organic semiconductor material, prepare patterned source electrode and drain electrode by mask plate, be carry out plated metal by electron beam evaporation, sputtering or thermal evaporation method, and form patterned source electrode and drain electrode by mask plate.
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