CN104317171A - A prebaking method of a surface acoustic wave device in a photoetching process - Google Patents
A prebaking method of a surface acoustic wave device in a photoetching process Download PDFInfo
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- CN104317171A CN104317171A CN201410407221.0A CN201410407221A CN104317171A CN 104317171 A CN104317171 A CN 104317171A CN 201410407221 A CN201410407221 A CN 201410407221A CN 104317171 A CN104317171 A CN 104317171A
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- temperature
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- acoustic wave
- surface acoustic
- drying oven
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Abstract
The invention provides a prebaking method of a surface acoustic wave device in a photoetching process, and belongs to the technical field of surface acoustic wave devices. The method includes: stabilizing a temperature of a drying oven at 160 DEG C, putting a wafer into the drying oven, roasting the wafer, lowering the temperature of the drying oven to 155 DEG C after the wafer is roasted for 10 min; lowering the temperature of the drying oven to 150 DEG C after the chip is roasted for another 10 min, maintaining the temperature for 1 h, lowering the temperature of the drying oven to 120 DEG C, maintaining the temperature for 10 min, and taking the wafer out. The roasting temperature of the wafer is controlled at 150-160 DEG C to allow a photoresist to reach a rheological state so as to achieve the objectives of protecting lines furthest, delaying the speed of side-direction corrosion and achieving thick membranes and thin lines, thus reducing the degree of process complexity of dry etching or stripping and reducing the process cost.
Description
Technical field
The present invention relates to a kind of SAW (Surface Acoustic Wave) device front-drying method in a photolithographic process, belong to SAW (Surface Acoustic Wave) device technical field.
Background technology
At present, the technique of traditional SAW (Surface Acoustic Wave) device has three kinds, and one is wet processing, and two is dry carving technologies, and three is stripping technologies.Wet processing cost is lower, but is mainly used in wide lines product.When for hachure product, because sideetching is comparatively serious, technique is difficult to realize, and must adopt dry quarter or stripping technology, cause cost very large.
Summary of the invention
The invention provides a kind of SAW (Surface Acoustic Wave) device front-drying method in a photolithographic process, more serious with the sideetching when being used for hachure product solving the existence of existing wet processing, increase dry quarter or the rear problem that technique is more complicated, cost is higher of stripping, the present invention adopts following technical scheme for this reason:
A SAW (Surface Acoustic Wave) device front-drying method in a photolithographic process, comprising:
By the temperature stabilization of baking oven at 160 degrees Celsius, wafer is put into described baking oven and is toasted by wafer;
Toast after 10 minutes and the temperature of described baking oven is down to 155 degrees Celsius, then toast after 10 minutes the temperature of described baking oven is down to 150 degrees Celsius, constant temperature keeps 1 hour;
The temperature of described baking oven is down to 120 degrees Celsius, and temperature constant took out described wafer after 10 minutes.
The technical scheme that embodiment of the present invention provides is by controlling at 150 degrees Celsius to 160 degrees Celsius by the baking temperature of wafer; photoresist is made to reach rheology; reach protective wire bar effect to greatest extent; slow down the speed of sideetching; realize the object of thick film hachure; thus reduce the dry process complexity of carving or peeling off, also reduce process costs simultaneously.
Embodiment
Be clearly and completely described to the technical scheme in the embodiment of the present invention below, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
This embodiment provides a kind of SAW (Surface Acoustic Wave) device front-drying method in a photolithographic process, comprising:
By the temperature stabilization of baking oven at 160 degrees Celsius, wafer is put into described baking oven and is toasted by wafer;
Toast after 10 minutes and the temperature of described baking oven is down to 155 degrees Celsius, then toast after 10 minutes the temperature of described baking oven is down to 150 degrees Celsius, constant temperature keeps 1 hour;
The temperature of described baking oven is down to 120 degrees Celsius, and temperature constant took out described wafer after 10 minutes.
After the wafer taken out is down to room temperature naturally, can start to corrode.
Adopt the technical scheme that this embodiment provides; by the baking temperature of wafer being controlled at 150 degrees Celsius to 160 degrees Celsius; photoresist is made to reach rheology; reach protective wire bar effect to greatest extent; slow down the speed of sideetching; realize the object of thick film hachure, thus reduce the dry process complexity of carving or peeling off, also reduce process costs simultaneously.
The above; be only the present invention's preferably embodiment; but protection scope of the present invention is not limited thereto; anyly be familiar with those skilled in the art in the technical scope that the embodiment of the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claim.
Claims (2)
1. a SAW (Surface Acoustic Wave) device front-drying method in a photolithographic process, is characterized in that, comprising:
By the temperature stabilization of baking oven at 160 degrees Celsius, wafer is put into described baking oven and is toasted by wafer;
Toast after 10 minutes and the temperature of described baking oven is down to 155 degrees Celsius, then toast after 10 minutes the temperature of described baking oven is down to 150 degrees Celsius, constant temperature keeps 1 hour;
The temperature of described baking oven is down to 120 degrees Celsius, and temperature constant took out described wafer after 10 minutes.
2. method according to claim 1, is characterized in that, described method also comprises:
After the described wafer taken out is down to room temperature naturally, then start to corrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410407221.0A CN104317171A (en) | 2014-08-18 | 2014-08-18 | A prebaking method of a surface acoustic wave device in a photoetching process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410407221.0A CN104317171A (en) | 2014-08-18 | 2014-08-18 | A prebaking method of a surface acoustic wave device in a photoetching process |
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| Publication Number | Publication Date |
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| CN104317171A true CN104317171A (en) | 2015-01-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410407221.0A Pending CN104317171A (en) | 2014-08-18 | 2014-08-18 | A prebaking method of a surface acoustic wave device in a photoetching process |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105045038A (en) * | 2015-08-28 | 2015-11-11 | 深圳华远微电科技有限公司 | Submicron-order dry etching process |
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| CN101852893A (en) * | 2009-03-30 | 2010-10-06 | 中国科学院半导体研究所 | Method for performing deep etching on silicon dioxide by taking photo-resist as mask |
| CN102243437A (en) * | 2011-06-14 | 2011-11-16 | 扬中市华瑞通讯仪器有限公司 | Method for manufacturing groove substrate of optical fiber array assembly |
| CN102694518A (en) * | 2012-05-24 | 2012-09-26 | 台州欧文电子科技有限公司 | Manufacturing method for acoustic surface wave element |
| CN102978621A (en) * | 2012-11-28 | 2013-03-20 | 北京中讯四方科技股份有限公司 | Wet etching method for aluminum film in surface acoustic wave device |
| CN103532510A (en) * | 2013-10-23 | 2014-01-22 | 无锡华普微电子有限公司 | Etching technology of SAW devices |
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2014
- 2014-08-18 CN CN201410407221.0A patent/CN104317171A/en active Pending
Patent Citations (7)
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| CN101673060A (en) * | 2008-09-09 | 2010-03-17 | 中芯国际集成电路制造(北京)有限公司 | Method for injecting ions after photoetching |
| CN101764053A (en) * | 2008-12-25 | 2010-06-30 | 中芯国际集成电路制造(上海)有限公司 | Photoetching method |
| CN101852893A (en) * | 2009-03-30 | 2010-10-06 | 中国科学院半导体研究所 | Method for performing deep etching on silicon dioxide by taking photo-resist as mask |
| CN102243437A (en) * | 2011-06-14 | 2011-11-16 | 扬中市华瑞通讯仪器有限公司 | Method for manufacturing groove substrate of optical fiber array assembly |
| CN102694518A (en) * | 2012-05-24 | 2012-09-26 | 台州欧文电子科技有限公司 | Manufacturing method for acoustic surface wave element |
| CN102978621A (en) * | 2012-11-28 | 2013-03-20 | 北京中讯四方科技股份有限公司 | Wet etching method for aluminum film in surface acoustic wave device |
| CN103532510A (en) * | 2013-10-23 | 2014-01-22 | 无锡华普微电子有限公司 | Etching technology of SAW devices |
Non-Patent Citations (1)
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| 杜文玺: "https://wenku.baidu.com/view/6334c31a6bd97f192279e93a.html", 《声表面波工艺原理-3光刻工艺原理》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105045038A (en) * | 2015-08-28 | 2015-11-11 | 深圳华远微电科技有限公司 | Submicron-order dry etching process |
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Application publication date: 20150128 |