CN104298268B - Temperature control method of semiconductor technology equipment with feedforward compensation - Google Patents
Temperature control method of semiconductor technology equipment with feedforward compensation Download PDFInfo
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- CN104298268B CN104298268B CN201410554332.4A CN201410554332A CN104298268B CN 104298268 B CN104298268 B CN 104298268B CN 201410554332 A CN201410554332 A CN 201410554332A CN 104298268 B CN104298268 B CN 104298268B
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Abstract
Disclosed is a temperature control method of semiconductor technology equipment with feedforward compensation. The semiconductor technology equipment comprises temperature control devices in one or more temperature control areas. The method comprises the steps that according to the preset temperature control condition of a semiconductor technology, feedforward compensation reference signal tracks of the temperature control devices are constructed, the whole temperature control temperature rise period is divided into a high-speed temperature rise period and a standard temperature rise period, the temperature rise process from initial temperature t to first intermediate temperature t' is completed in the high-speed temperature rise period, and the temperature rise process from the first intermediate temperature t' to target temperature T is completed in the standard temperature rise period; reference signal tracks in the standard temperature rise period meet the preset temperature control condition, and the temperature rise speed of the high-speed temperature rise period is higher than that of the standard temperature rise period; control operation of the temperature control system is carried out based on the obtained feedforward compensation reference signal tracks. The influence of the time lag of the temperature control system can be weakened, the temperature rise effect of a furnace can be improved, and the productivity of the semiconductor technology equipment can be improved.
Description
Technical field
The invention belongs to ic manufacturing technology field, it is related to a kind of semiconductor manufacturing equipment with feedforward compensation
Temp. control method, more specifically, a kind of reference signal method for planning track being applied to semiconductor manufacturing equipment temperature control.
Background technology
At present, the design of semiconductor device develops rapidly to the direction of high density, high integration, to semiconductor integrated circuit
New technology, new technique, new equipment propose higher and higher requirement.As operation before integrated circuit production line process equipment it
One semiconductor manufacturing equipment, plays the part of emphatically in the silicon chip manufacturing process such as diffusion, annealing, alloy, oxidation, thin film growth
The role wanting, it requires the temperature of precise control is silicon chip surface temperature.
The temperature of semiconductor manufacturing equipment as controlled device, in process cavity temperature from initial temperature to target temperature
(target), in the case of during, it is more satisfactory for meeting quick and linear temperature increase characteristic.It will be apparent to those skilled in the art that
All there is the phenomenon of time lag in temperature control system, the phenomenon of time lag is easily disturbed by extraneous factor, leads to control system low-response, controls
Degradation；, when in production process, the parameter such as model time lag inertia changes, the spy of the quick and linear temperature increase of controller
Property effect will be deteriorated, can lead to when serious system produce hyperharmonic vibration.
Meanwhile, the diversity of the body of heater characteristic of different process equipment and temperature range can increase temperature control system further
Time lag, directly affects the production capacity of equipment and performance and the quality of output product that is to say, that the temperature of semiconductor manufacturing equipment
The temperature control effect of degree control system directly affects the qualification rate of wafer
Refer to Fig. 1, Fig. 1 is the pre-conditioned acquisition standard expectation in prior art according to semiconductor manufacturing equipment temperature control
The schematic diagram of obtained temperature control reference signal track after signal.Before carrying out semiconductor technology, technical staff first can be according to setting
The temperature that sets the goal (target), chooses different heating rate k, as shown in figure 1, under initial temperature condition, from initial time 0
Start, using heating rate k as slope, reach target temperature (target), Planning Standard desired signal a expects letter according to standard
Number (condition of chain-dotted line a), completes the control process of a design temperature, obtains temperature response curve (solid line b).
It will be seen from figure 1 that target temperature (target) to be rapidly achieved is it is necessary to choose higher heating rate k, so
And, if heating rate k selection is too high, quick and linear temperature increase characteristic can produce contradiction, and, reach target temperature just
(target) when, because heating rate is too fast, the stabilization sub stage overshoot of heating rate is excessive, thus it is accurate to lead to system to obtain
The process-time of target temperature (target) increases.
Content of the invention
It is an object of the invention to provide a kind of reference signal trajectory planning side being applied to semiconductor manufacturing equipment temperature control
Method, by setting feedforward compensation reference signal, thus weakening the impact of temperature control system time lag and overshoot and vibration, accelerates controlled
The temperature rise effect of equipment, improves the production capacity of process equipment.
For achieving the above object, technical scheme is as follows:
A kind of temp. control method of the semiconductor manufacturing equipment with feedforward compensation, described semiconductor manufacturing equipment includes one
The temperature control of individual or multiple temperature control area is it is characterised in that methods described includes:
Step s1: according to the default temperature-controlled conditions of semiconductor technology, build the feedforward compensation reference signal track of temperature control；Its
In, described default temperature-controlled condition includes initial temperature t, target temperature t and heating rate k；Described step s1 specifically includes:
Step s11: the whole temperature control temperature rise period is divided into including High-speed temperature rise period and standard temperature rise period, described height
The fast temperature rise period completes from initial temperature t to the first medium temperature t ' temperature-rise period, described standard temperature rise period completes from
One medium temperature t ' to target temperature t temperature-rise period；The reference signal track of described standard temperature rise period meets described default
Temperature-controlled conditions, the heating rate of described High-speed temperature rise period is higher than the heating rate of described standard temperature rise period；
Step s12: according to described semiconductor manufacturing equipment include one or more temperature control areas temperature control target temperature t and
Heating rate k's is pre-conditioned, plans the standard expected signal track of described standard temperature rise period；And based on described standard expectation
Signal trajectory, temperature control system simulation or actually accomplish control process to initial temperature t to pre-set target temperature t, and according to institute
State the temperature response curve that control process obtains described standard temperature rise period；
Step s13: according to described High-speed temperature rise period t ' default heating rate k ', plan described standard high-speed heating rank
The desired signal trajectory of section；And it is based on described desired signal trajectory, temperature control system simulation completes in the middle of to initial temperature t to first
Temperature t ' control process, and according to described control process obtain described High-speed temperature rise period temperature response curve；
Step s14: the temperature response curve of described High-speed temperature rise period and described standard are obtained according to described control process
The temperature response curve of temperature rise period, obtain in the first medium temperature t ' point splicing feedforward compensation reference signal track；
Step s2: the track based on the described feedforward compensation reference signal obtaining, carry out the control behaviour of described temperature control system
Make.
Preferably, described High-speed temperature rise period t ' it is made up of multistage, the default heating rate of final stage is heating rate
k’.
Preferably, described High-speed temperature rise period t ' in final stage default heating rate be less than former sections intensification speed
Rate.
Preferably, described High-speed temperature rise period t ' in former sections of heating rate successively decrease successively.
Preferably, described first medium temperature t ' it is described target in the temperature response curve of described standard temperature rise period
The temperature averages point of temperature t and initial temperature t.
Preferably, the pre-conditioned selection rule in described step s12 is as follows:
When system heats for single temperature zone, preset initial temperature t, target temperature t and target heating rate k, described
Under target heating rate k, standard expected signal is obtained according to the process planning that described initial temperature t reaches described target temperature t；
When system heats for multi-temperature zone, preset target heating rate in initial temperature t, target temperature t and each warm area
Minima k, under described heating rate k, according to described initial temperature t reach described target temperature t process planning obtain
Standard expected signal.
Preferably, described standard temperature rise period includes the first temperature rise period and the second temperature rise period, described first intensification
Stage completes from the first medium temperature t ' to the second medium temperature t " temperature-rise period, described second temperature rise period completes from second
Medium temperature t " arrives the temperature-rise period of target temperature t；The reference signal track of described first temperature rise period meets described default temperature
Control condition, the heating rate of described second temperature rise period is less than the heating rate of described standard temperature rise period.
Preferably, the time scale of described first temperature rise period and the second temperature rise period is 1:6.
Preferably, described second temperature rise period is made up of the sub-stage of multistage difference heating rate, described second intensification rank
The default heating rate of initial a section in section is higher than latter several sections of heating rate.
Preferably, the heating rate of rear several sections in described second temperature rise period successively decreases successively.
From technique scheme as can be seen that a kind of temperature control side of the semiconductor manufacturing equipment with feedforward compensation of the present invention
Method, that is, propose a kind of reference signal method for planning track, and it is divided into the High-speed temperature rise period of beginning by will heat up control process
With follow-up standard temperature rise period, and the preceding paragraph temperature rise period at a slow speed can also be added at the end of follow-up standard temperature rise period
To complete.After the present invention, temperature controlled time lag is weakened, and the heating-up time is shortened, and improves the temperature control of equipment
Performance.Using this method in that context it may be convenient to set feedforward reference signal, weaken the impact of temperature control system time lag, can simultaneously
Ensure predetermined heating rate, shorten the heating-up time, improve the production capacity of semiconductor manufacturing equipment.
Brief description
Fig. 1 is according to gained after the pre-conditioned acquisition standard expected signal of semiconductor manufacturing equipment temperature control in prior art
Schematic diagram to temperature control reference signal track.
Fig. 2 is applied to the schematic flow sheet of the control method of temperature control system in semiconductor manufacturing equipment for the present invention
Fig. 3 will heat up, for the present invention, the setting feedforward reference letter that control process is divided into High-speed temperature rise period and standard temperature rise period
The schematic diagram of the preferred embodiment of number track process
Fig. 4 will heat up the control process standard temperature rise period for the present invention and is divided into the first temperature rise period and the second temperature rise period again
The schematic diagram of the preferred embodiment of setting feedforward reference signal track process
Specific embodiment
2-4 below in conjunction with the accompanying drawings, is described in further detail to the specific embodiment of the present invention.
It should be noted that the present invention has the temp. control method of the semiconductor manufacturing equipment of feedforward compensation, before setting
Feedback compensated reference signal, that is, will heat up control process and be divided into the High-speed temperature rise period of beginning and follow-up standard temperature rise period, and
The temperature rise period completes at a slow speed the preceding paragraph can also to be added at the end of follow-up standard temperature rise period；Obtained based on above-mentioned temperature-rise period
The reference signal method for planning track arriving, obtains the track of feedforward reference signal；According to the described feedforward reference signal rail obtaining
Mark obtains the feedforward reference signal of temperature control system, and carries out the control operation of temperature control system based on described feedforward reference signal.
In the following embodiments, the temperature control of semiconductor manufacturing equipment can be divided into one or more controls as needed
Warm area, each temperature control area can include multiple thermocouples and heating unit respectively, and each temperature control area can also include multiple respectively
Thermocouple and heating unit.
Refer to Fig. 2, Fig. 2 is applied to the flow process of the control method of temperature control system in semiconductor manufacturing equipment for the present invention
Schematic diagram.The solution of the embodiment of the present invention is mainly as follows:
Step s1: according to the default temperature-controlled conditions of semiconductor technology, build the feedforward compensation reference signal track of temperature control；?
In some preferred embodiments of the present invention, when system heats for single temperature zone, default temperature-controlled condition can include initial temperature t,
Target temperature t and heating rate k；When system heats for multi-temperature zone, default temperature-controlled condition can select including default initially temperature
Minima k of target heating rate in degree t, target temperature t and each warm area.Concrete to step s1 below by two embodiments
Realize step to be described in detail.
Embodiment one
Refer to Fig. 3, Fig. 3 will heat up, for the present invention, the setting that control process is divided into High-speed temperature rise period and standard temperature rise period
The schematic diagram of the preferred embodiment of feedforward reference signal track process.As shown in Figures 2 and 3, step s1 can be specifically divided into as follows
Step:
Step s11: the whole temperature control temperature rise period is divided into including High-speed temperature rise period t ' and standard temperature rise period t, high
Fast temperature rise period t ' completes from initial temperature t to the first medium temperature t ' temperature-rise period (i.e. 0 to the t1 time as shown in Figure 3
The temperature-rise period of section), standard temperature rise period t completes from the first medium temperature t ' to target temperature t temperature-rise period (i.e. such as Fig. 3
The temperature-rise period of shown t1 to t2 time period).
It should be stressed that, the reference signal track of standard temperature rise period t meets default temperature-controlled condition；High-speed heating
The heating rate of stage t ' is higher than the heating rate of standard temperature rise period t；This is the key point weakening temperature control system time lag.
Step s12: according to described semiconductor manufacturing equipment include one or more temperature control areas temperature control target temperature t and
Heating rate k's is pre-conditioned, plans the standard expected signal track of described standard temperature rise period；And based on described standard expectation
Signal trajectory, temperature control system simulation completes the control process to initial temperature t to pre-set target temperature t, and according to described control
The temperature response curve of standard temperature rise period described in Procedure Acquisition；For sake of convenience, assume in the present embodiment that this temperature control adds
Hot systems are single temperature zone temperature control heating system.
And, in some preferred embodiments of the present invention, High-speed temperature rise period t ' can also be by the different speed that heats up of multistage
The sub-stage composition of rate, but the default heating rate of last sub-stage is usually heating rate k '；High-speed temperature rise period t ' in
The default heating rate of last sub-stage be less than the heating rate of former sub-stages, it is preferred that High-speed temperature rise period t ' in
The heating rate of former sub-stages successively decreases successively.
In the present embodiment, the first medium temperature t ' value be in the temperature response curve of standard temperature rise period, that is,
The temperature averages point of target temperature t and initial temperature t, High-speed temperature rise period t ' also only comprise a temperature rise period.Next
Can be carried out:
Step s13: according to High-speed temperature rise period t ' default heating rate k ', plan described standard High-speed temperature rise period
Desired signal trajectory；And it is based on described desired signal trajectory, temperature control system simulation completes to initial temperature t to the first medium temperature
The control process of t ', and the temperature response curve of described High-speed temperature rise period is obtained according to described control process.
Specifically, then refer to Fig. 3, the first medium temperature t ' acquisition of corresponding response time point, can: set first
Target temperature t, heating rate k, under initial temperature condition, from the beginning of initial time 0, using heating rate k as slope, reach
Target temperature t, Planning Standard desired signal a.Then, according to the standard expected signal planned (as the chain-dotted line a's) in Fig. 3
Condition, completes the control process of a design temperature, obtains temperature response curve (as the solid line b) in Fig. 3.Then, in solid line b
On find mean point a of target temperature t and initial temperature t, cross point a and do parallel lines parallel to x-axis, obtain and standard expectation
The intersection point b of signal a, and line segment ab apart from d.Intercept the point a ' for d for the distance in the extended line direction of line segment ab, by standard
Hope that signal a moves to point a ' along the direction parallel to x-axis and obtains centrage curve c.
Step s14: the temperature response curve of described High-speed temperature rise period and described standard are obtained according to described control process
The temperature response curve of temperature rise period, obtain in the first medium temperature t ' point splicing feedforward compensation reference signal track.From
Acquisition result above is as can be seen that the trajectory planning of new feedforward reference signal is with 0 as initial time, in the time of t1
In, from the beginning of initial temperature, with suitable slope k ' it is ensured that in the t1 moment, the track of reference signal can reach point c, and point c is
The intersection point of timeline t1 and curve c.The temperature of point c and the difference of initial temperature can also determine using this kind of feedforward reference signal
The minimum temperature of trajectory planning；Afterwards along translation centrage curve c as ensuing feedforward reference signal track, that is,
Heavy line part e1+e2+e3.
The track of feedforward reference signal is after heavy line part e1+e2+e3 determines it is possible to execution, step s2: based on obtaining
The track of the feedforward compensation reference signal obtaining, carries out the control operation of temperature control system.
Embodiment two
In order that temperature control system does not produce larger overshoot in the temperature stabilization stage, in the present embodiment, to embodiment
Method can also improve.Refer to Fig. 4 incorporated by reference to Fig. 2, Fig. 4 will heat up the control process standard temperature rise period (i.e. such as the present invention
The temperature-rise period of t1 to the t2 time period shown in Fig. 3) it is divided into the first temperature rise period and the setting feedforward of the second temperature rise period to join again
Examine the schematic diagram of the preferred embodiment of signal trajectory process.As shown in figure 4, standard temperature rise period t included for the first temperature rise period (i.e.
The temperature-rise period of t1 to t2 time period as shown in Figure 4) and (i.e. t2 to the t3 as shown in Figure 4 time period the second temperature rise period
Temperature-rise period), the first temperature rise period completed from the first medium temperature t ' to the second medium temperature t " and temperature-rise period, second intensification
Stage completes from the second medium temperature t " to target temperature t temperature-rise period.
It should be stressed that, the reference signal track of the first temperature rise period must is fulfilled for default temperature-controlled condition, generally
In the case of the second temperature rise period heating rate be less than standard temperature rise period heating rate.Preferably, the first temperature rise period and
The time scale of the second temperature rise period can be 1:6.
And, in some preferred embodiments of the present invention, the second temperature rise period is by the sub- rank of multistage difference heating rate
Duan Zucheng；More preferably, the default heating rate of initial a section in the second temperature rise period is usually above latter several sections of heating rate；
It is preferred that the heating rate of in the second temperature rise period rear several sections successively decreases successively.
In the present embodiment, the second temperature rise period only had the High-speed temperature rise period in a section, and, embodiment one and standard
The setting feedforward reference signal track process of temperature rise period goes for embodiment two, just highlights the first intensification rank below
Section and the temperature-rise period of the second temperature rise period.
Refer to Fig. 4, the second medium temperature t " value be in the temperature response curve of standard temperature rise period, you can
The back segment of t2 time, suitably leaves and takes the t3 time, with relatively low heating rate k " heat up, i.e. heavy line e4, t2 and t3 concrete when
Between can be suitably modified, in the present embodiment, the parameter identical of High-speed temperature rise period, then the track of feedforward reference signal is thick
Bold portion e1+e2+e4+e3.
The track of feedforward reference signal is it is possible to execute, step s2: base after heavy line part e1+e2+e4+e3 determines
In the track of the feedforward compensation reference signal obtaining, carry out the control operation of temperature control system.
In sum, the technical scheme in embodiments of the invention, can be arranged not according to the requirement of different temperature control systems
With the track of feedforward reference signal, in order to weaken temperature control system time lag and overshoot is big and the impact of vibration is it is ensured that predetermined liter
Warm speed, accelerates the temperature rise effect of controlled device, reduces the time of whole technological process, improves the production capacity of process equipment.
Above-described only the preferred embodiments of the present invention, the patent that described embodiment is simultaneously not used to limit the present invention is protected
The equivalent structure change that shield scope, the description of therefore every utilization present invention and accompanying drawing content are made, should be included in the same manner
In protection scope of the present invention.
Claims (10)
1. a kind of temp. control method of the semiconductor manufacturing equipment with feedforward compensation, described semiconductor manufacturing equipment includes one
Or the temperature control of multiple temperature control area is it is characterised in that methods described includes:
Step s1: according to the default temperature-controlled conditions of semiconductor technology, build the feedforward compensation reference signal track of temperature control；Wherein,
Described default temperature-controlled condition includes initial temperature t, target temperature t and heating rate k；Described step s1 specifically includes:
Step s11: the whole temperature control temperature rise period is divided into including High-speed temperature rise period and standard temperature rise period, described high speed liter
Thermophase completes from initial temperature t to the first medium temperature t ' temperature-rise period, described standard temperature rise period completes from first
Between temperature t ' to target temperature t temperature-rise period；The reference signal track of described standard temperature rise period meets described default temperature control
Condition, the heating rate of described High-speed temperature rise period is higher than the heating rate of described standard temperature rise period；
Step s12: include temperature control target temperature t and the intensification of one or more temperature control areas according to described semiconductor manufacturing equipment
Pre-conditioned, the standard expected signal track of the described standard temperature rise period of planning of speed k；And it is based on described standard expected signal
Track, temperature control system simulation or actually accomplish control process to initial temperature t to pre-set target temperature t, and according to described control
The temperature response curve of standard temperature rise period described in Procedure Acquisition processed；
Step s13: according to described High-speed temperature rise period t ' default heating rate k ', plan described standard High-speed temperature rise period
Desired signal trajectory；And it is based on described desired signal trajectory, temperature control system simulation completes to initial temperature t to the first medium temperature
The control process of t ', and the temperature response curve of described High-speed temperature rise period is obtained according to described control process；
Step s14: the temperature response curve of described High-speed temperature rise period is obtained according to described control process and described standard heats up
The temperature response curve in stage, obtain in the first medium temperature t ' point splicing feedforward compensation reference signal track；
Step s2: the track based on the described feedforward compensation reference signal obtaining, carry out the control operation of described temperature control system.
2. the temp. control method of semiconductor manufacturing equipment according to claim 1 is it is characterised in that described High-speed temperature rise period
T ' is made up of multistage, and the default heating rate of final stage is heating rate k '.
3. the temp. control method of semiconductor manufacturing equipment according to claim 2 is it is characterised in that described High-speed temperature rise period
The default heating rate of the final stage in t ' is less than former sections of heating rate.
4. the temp. control method of semiconductor manufacturing equipment according to claim 3 is it is characterised in that described High-speed temperature rise period
In t ', former sections of heating rate successively decreases successively.
5. the temp. control method of semiconductor manufacturing equipment according to claim 1 is it is characterised in that described first medium temperature
T ' is the temperature averages point of described target temperature t and initial temperature t in the temperature response curve of described standard temperature rise period.
6. the temp. control method of semiconductor manufacturing equipment according to claim 1 is it is characterised in that in described step s12
Pre-conditioned selection rule as follows:
When system heats for single temperature zone, preset initial temperature t, target temperature t and heating rate k, in described heating rate k
Under, standard expected signal is obtained according to the process planning that described initial temperature t reaches described target temperature t；
When system heats, preset the minimum of heating rate k in initial temperature t, target temperature t and each warm area for multi-temperature zone
Value, under the minima of described heating rate k, obtains according to the process planning that described initial temperature t reaches described target temperature t
Standard expected signal.
7. the temp. control method according to any one of semiconductor manufacturing equipment of claim 1-6 is it is characterised in that described
Standard temperature rise period includes the first temperature rise period and the second temperature rise period, and described first temperature rise period completes from the first medium temperature
The temperature-rise period of t ' to second medium temperature t ", described second temperature rise period completes from the second medium temperature t " to target temperature t
Temperature-rise period；The reference signal track of described first temperature rise period meets described default temperature-controlled condition, described second intensification rank
The heating rate of section is less than the heating rate of described standard temperature rise period.
8. the temp. control method of semiconductor manufacturing equipment according to claim 7 is it is characterised in that described first temperature rise period
Time scale with the second temperature rise period is 1:6.
9. the temp. control method of semiconductor manufacturing equipment according to claim 8 is it is characterised in that described second temperature rise period
It is made up of the sub-stage of multistage difference heating rate, the default heating rate of initial a section in described second temperature rise period is higher than
Several sections of heating rate afterwards.
10. the temp. control method of semiconductor manufacturing equipment according to claim 9 is it is characterised in that described second intensification rank
The heating rate of rear several sections in section successively decreases successively.
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| CN106569518A (en) * | 2016-10-17 | 2017-04-19 | 长沙开元仪器股份有限公司 | Temperature control method for volatile component measurement of coal of muffle furnace |
| CN109613622B (en) * | 2018-12-29 | 2021-07-13 | 珠海优特智厨科技有限公司 | Food material throwing state detection method and throwing state detection device |
| CN110124594A (en) * | 2019-06-03 | 2019-08-16 | 常州瑞曦生物科技有限公司 | Fine chemistry industry temperature of reaction kettle control method |
| CN112596555B (en) * | 2020-12-11 | 2022-07-19 | 楚天科技股份有限公司 | Control method and system for temperature rise and pressure rise of air-steam mixed sterilization cabinet |
| CN115220498A (en) * | 2021-06-04 | 2022-10-21 | 广州汽车集团股份有限公司 | Control method of temperature control apparatus, and storage medium |
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| CN102354244B (en) * | 2011-06-16 | 2013-10-02 | 北京七星华创电子股份有限公司 | Temperature feed-forward compensation method for semiconductor heat treatment process |
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