CN104297830B - Optical fingerprint sensor chip grating and preparation method thereof - Google Patents
Optical fingerprint sensor chip grating and preparation method thereof Download PDFInfo
- Publication number
- CN104297830B CN104297830B CN201410589027.9A CN201410589027A CN104297830B CN 104297830 B CN104297830 B CN 104297830B CN 201410589027 A CN201410589027 A CN 201410589027A CN 104297830 B CN104297830 B CN 104297830B
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- grating
- fingerprint sensor
- optical fingerprint
- sensor chip
- metal
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1324—Sensors therefor by using geometrical optics, e.g. using prisms
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Human Computer Interaction (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Image Input (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
The invention discloses a kind of optical fingerprint sensor chip grating and preparation method thereof, the wafer of optical fingerprint sensor chip photosensitive unit directly generates grating, photosensitive unit correspondence perforate, the lighttight composition of grating is metal, and circuit part all covers with metal.Simple in construction, precision are high, and chip can directly use.
Description
Technical field
The present invention relates to a kind of optical fingerprint sensor chip, particularly relate to a kind of optical fingerprint sensor chip grating and
Manufacture method.
Background technology
As shown in Figure 1 and Figure 2, optical fingerprint sensor uses the principle of pinhole imaging system, needs to make on each pixel light
Grid, thus meet the condition of pinhole imaging system.
In prior art, it is all to make single grating.Structure is complicated, precision is low.
Summary of the invention
It is an object of the invention to provide the high optical fingerprint sensor chip grating of a kind of simple in construction, precision and making side thereof
Method.
It is an object of the invention to be achieved through the following technical solutions:
The optical fingerprint sensor chip grating of the present invention, on the wafer of optical fingerprint sensor chip photosensitive unit directly
Generating grating, photosensitive unit correspondence perforate, circuit part is capped.
The manufacture method of the above-mentioned optical fingerprint sensor chip grating of the present invention, including step:
A, on the wafer that optical fingerprint sensor chip photosensitive unit processes, generate transparent silicon dioxide by CVD method
Film;
B, with sputtering method generate opaque metal film;
C, expose with photoetching method and need the region of printing opacity;
D, after dry etching, the metal etch needing transmission region is fallen, chip is made grating;
E, by the method for CVD at the transparent protecting film of the Surface Creation of chip.
As seen from the above technical solution provided by the invention, the optical fingerprint sensor chip that the embodiment of the present invention provides
Grating and preparation method thereof, owing to directly directly generating grating on the wafer of optical fingerprint sensor chip photosensitive unit,
Photosensitive unit correspondence perforate, circuit part is capped, and simple in construction, precision are high, and chip can directly use.
Accompanying drawing explanation
Fig. 1 is the structural representation of grating in optical fingerprint sensor pixel;
Fig. 2 is pinhole imaging system schematic diagram;
Fig. 3-1 is the wafer schematic diagram that in the embodiment of the present invention, photosensitive unit processes;
Fig. 3-2 is that in the embodiment of the present invention, CVD method generates transparent silicon dioxide film schematic diagram;
Fig. 3-3 is that in the embodiment of the present invention, SPUTTER sputtering method generates opaque metal film schematic diagram;
Fig. 3-4 is that in the embodiment of the present invention, PR photoetching method exposes and will need the area schematic of printing opacity;
Fig. 3-5 is to be opened in the region of printing opacity after dry etching in the embodiment of the present invention, makes grating signal on chip
Figure;
Fig. 3-6 be in the embodiment of the present invention method of CVD at the transparent protecting film schematic diagram of the Surface Creation of chip.
In figure: 1, object (finger), 2, raster unit, 3, the photosensitive unit of chip.
Detailed description of the invention
The embodiment of the present invention will be described in further detail below.
The optical fingerprint sensor chip grating of the present invention, its preferably detailed description of the invention is:
The wafer of optical fingerprint sensor chip photosensitive unit directly generates grating, photosensitive unit correspondence perforate, circuit
Part is capped.
The lighttight composition of described grating is metal, and described circuit part all covers with metal.
The manufacture method of the above-mentioned optical fingerprint sensor chip grating of the present invention, its preferably detailed description of the invention is:
Including step:
A, use CVD (chemical gaseous phase deposition) method life on the wafer that optical fingerprint sensor chip photosensitive unit processes
Become transparent silicon dioxide film;
B, with sputtering method generate opaque metal film;
C, expose with photoetching method and need the region of printing opacity;
D, after dry etching, the metal etch needing transmission region is fallen, chip is made grating;
E, by the method for CVD at the transparent protecting film of the Surface Creation of chip.
Described step E includes:
First, transparent silicon dioxide is made by SPIN ON GLASS (spin glass) method;
Then, transparent silicon oxynitride protecting film is generated by PECVD (plasma enhanced chemical vapor deposition) method.
The present invention is the generation method of wafer scale grating, directly generates grating on wafer (WAFER), grating impermeable
The composition of light is metal, the method using sputtering and photoetching;
The photosensitive unit correspondence perforate of imageing sensor, circuit part all covers with metal.
Specific embodiment:
As Fig. 3-1 is to shown in Fig. 3-5, and manufacture method is as follows:
1.SIO2The silicon dioxide film that-CVD--is transparent;
2. the method for sputtering does metal;
3. photoetching;
4. the metal etch of position corresponding for photosensitive region is fallen by the method for dry etching;
5.1 SOG protecting film--the silicon dioxide that SPIN ON GLASS method is transparent;
The SION that 5.2 PECVD methods generate, transparent silicon oxynitride, protecting film anti-scratch, chip can directly make
With.
The above, the only present invention preferably detailed description of the invention, but protection scope of the present invention is not limited thereto,
Any those familiar with the art in the technical scope of present disclosure, the change that can readily occur in or replace
Change, all should contain within protection scope of the present invention.Therefore, protection scope of the present invention should be with claims
Protection domain is as the criterion.
Claims (4)
1. an optical fingerprint sensor chip grating, it is characterised in that at optical fingerprint sensor chip photosensitive unit
Directly generating grating, photosensitive unit correspondence perforate on wafer, circuit part is capped.
Optical fingerprint sensor chip grating the most according to claim 1, it is characterised in that described grating impermeable
The composition of light is metal, and described circuit part all covers with metal.
3. the manufacture method of the optical fingerprint sensor chip grating described in a claim 1 or 2, it is characterised in that bag
Include step:
A, on the wafer that optical fingerprint sensor chip photosensitive unit processes with chemical gaseous phase depositing process generate transparent
Silicon dioxide film;
B, with sputtering method generate opaque metal film;
C, expose with photoetching method and need the region of printing opacity;
D, after dry etching, the metal etch needing transmission region is fallen, chip is made grating;
E, by the method for chemical gaseous phase deposition at the transparent protecting film of the Surface Creation of chip.
The manufacture method of optical fingerprint sensor chip grating the most according to claim 3, it is characterised in that described
Step E includes:
First, transparent silicon dioxide is made by spin glass method;
Then, transparent silicon oxynitride protecting film is generated with plasma enhanced chemical vapor deposition method.
Priority Applications (1)
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CN201410589027.9A CN104297830B (en) | 2014-10-28 | 2014-10-28 | Optical fingerprint sensor chip grating and preparation method thereof |
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CN201410589027.9A CN104297830B (en) | 2014-10-28 | 2014-10-28 | Optical fingerprint sensor chip grating and preparation method thereof |
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CN104297830A CN104297830A (en) | 2015-01-21 |
CN104297830B true CN104297830B (en) | 2016-08-31 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2018133768A1 (en) * | 2017-01-17 | 2018-07-26 | 苏州晶方半导体科技股份有限公司 | Packaging structure and packaging method for fingerprint recognition chip |
CN108693579A (en) * | 2017-04-06 | 2018-10-23 | 广州熙客轩电子科技有限公司 | A kind of combination optical grating construction for 3D object identification systems |
CN108010931B (en) * | 2017-12-28 | 2021-03-30 | 苏州晶方半导体科技股份有限公司 | Packaging structure and packaging method of optical fingerprint chip |
CN111461040A (en) * | 2020-04-07 | 2020-07-28 | 武汉华星光电技术有限公司 | Electronic equipment and optical fingerprint identification module thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7526111B2 (en) * | 2003-08-26 | 2009-04-28 | Hitachi, Ltd. | Personal identification device and method |
CN103455810A (en) * | 2013-08-30 | 2013-12-18 | 格科微电子(上海)有限公司 | Optical fingerprint collection device, portable electronic device and optical fingerprint collection method |
CN204142987U (en) * | 2014-10-28 | 2015-02-04 | 北京思比科微电子技术股份有限公司 | Optical fingerprint sensor chip grating |
Family Cites Families (3)
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US7212950B2 (en) * | 2002-09-18 | 2007-05-01 | Onwafer Technologies, Inc. | Methods and apparatus for equipment matching and characterization |
JP4266770B2 (en) * | 2003-10-22 | 2009-05-20 | アルプス電気株式会社 | Optical image reader |
US8077929B2 (en) * | 2006-02-22 | 2011-12-13 | Wasatch Photonics, Inc. | Ambient light rejection filter |
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2014
- 2014-10-28 CN CN201410589027.9A patent/CN104297830B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7526111B2 (en) * | 2003-08-26 | 2009-04-28 | Hitachi, Ltd. | Personal identification device and method |
CN103455810A (en) * | 2013-08-30 | 2013-12-18 | 格科微电子(上海)有限公司 | Optical fingerprint collection device, portable electronic device and optical fingerprint collection method |
CN204142987U (en) * | 2014-10-28 | 2015-02-04 | 北京思比科微电子技术股份有限公司 | Optical fingerprint sensor chip grating |
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