CN104282697B - The forming method of imaging sensor - Google Patents
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- CN104282697B CN104282697B CN201310277684.5A CN201310277684A CN104282697B CN 104282697 B CN104282697 B CN 104282697B CN 201310277684 A CN201310277684 A CN 201310277684A CN 104282697 B CN104282697 B CN 104282697B
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Abstract
A kind of forming method of imaging sensor, including：Wafer is provided；Each transistor in wafer frontside formation image element circuit；In wafer and the upper formation dielectric layer of transistor, and the interconnection structure in dielectric layer, each described transistor is connected by interconnection structure, forms image element circuit；Formed after image element circuit, bearing structure is formed on dielectric layer；Formed after bearing structure, overturn wafer, make the back side of wafer upward；Patterned mask layer is formed at the back side of wafer, patterned mask layer defines the position of diffsuin stack；Using the patterned mask layer as mask, wafer is doped, diffsuin stack is formed in wafer, the diffsuin stack is connected with the image element circuit；Remove patterned mask layer；Remove after patterned mask layer, photodiode is formed at the back side of wafer.The forming method technique of imaging sensor of the present invention is simple, with low cost.
Description
Technical field
The present invention relates to semiconductor applications, a kind of forming method of imaging sensor is related specifically to.
Background technology
Imaging sensor be it is a kind of optical imagery can be changed into the semiconductor devices of electric signal, and with this capture images.
According to the difference of image sensor element, imaging sensor can be divided into charge coupled cell（CCD）Imaging sensor and complementation gold
Belong to oxide semiconductor（CMOS）Two kinds of imaging sensor.Compared with ccd image sensor, cmos image sensor can be using now
Some semiconductor equipments are made, it is not necessary to extra equipment investment.And its quality can be with the lifting of semiconductor technology
And improve, requirement of the user to the continuous lifting of quality can be preferably met, such as more flexible image capture, higher sensitive
Degree, broader dynamic range, higher resolution ratio, lower power consumption and the more excellent system integration.For these reasons,
The demand growth speed of current cmos image sensor has reached seven times of ccd sensor demand growth speed.
Cmos image sensor can be divided into preceding illuminated（FSI, Front side illumination）Imaging sensor and
Back-illuminated type（BSI, Back side illumination）Imaging sensor.In preceding illuminated image sensor, image element circuit is located at
Between light-receiving side and photodiode.Light enters cmos image sensor from light-receiving side, reach photodiode it
Before, image element circuit need to be passed through, image element circuit blocks some light and reduces the light of arrival photodiode so that CMOS
The filling rate of imaging sensor（Ratio of the photodiode area to elemental area）Reduce.
Back side illumination image sensor makes light enter from the back side of chip, and light passes through substrate, is then passed to the pole of photoelectricity two
Pipe, without through image element circuit；Or, photodiode is formed directly into the back side of the substrate, and light is directly entered institute
State photodiode.The small shortcoming of illuminated image sensor filling rate before back side illumination image sensor overcomes.
Commonly used in the prior art, the method for forming back side illumination image sensor is as follows：
With reference to Fig. 1 there is provided the first wafer 1, n-type doped layer 2 and p-type doped layer 3, the n-type are formed on the first wafer 1
Doped layer 2 and p-type doped layer 3 constitute the photodiode in imaging sensor.
With reference to Fig. 2, the second wafer 4 is bonded on the p-type doped layer 3, and by polishing or etching, be thinned described first
Wafer 1.
With reference to Fig. 3, first wafer 1 is overturn, makes the back side of first wafer 1 upward, and in first wafer 1
The back side on form patterned mask layer 5, the patterned mask layer 5 defines diffsuin stack（diffusion plug）Position
Put.And be mask with the patterned mask layer 5, p-type impurity doping is carried out to the first wafer 1, diffsuin stack 6 is formed, it is described
Diffsuin stack 6 is connected with the n-type doped layer 2.
Then, with reference to Fig. 4, the patterned mask layer 5 is removed, image element circuit is formed on first wafer 1.Figure
Schematically show that the transmission transistor 7 in image element circuit and source follow transistor 8 in 4.Wherein photodiode passes through institute
State the drain electrode of diffsuin stack 6 and the transmission transistor 7（I.e. the drain electrode diffsuin stack 6 of transmission transistor 7 in Fig. 4）It is connected.
Then, dielectric layer 9, and the interconnection structure in the dielectric layer 9 are formed on first wafer 1（Figure
In non-label）, each transistor in interconnection structure connection image element circuit.Interconnection structure is schematically showed in Fig. 4
It is connected to transmission transistor 7 and source follows transistor 8.
With reference to Fig. 5, the 3rd wafer 10 is bonded on the dielectric layer 9, first wafer 1 is overturn, makes the 3rd wafer 10
Positioned at bottom, removal second wafer 4 is then etched or polished.
Optical filter 11 is finally formed on the p-type doped layer 3.
This technique for forming back side illumination image sensor is extremely complex, it is necessary to could form described using at least three wafers
Back side illumination image sensor so that process costs are too high；And also there is larger dark electricity in obtained back side illumination image sensor
Stream.
The content of the invention
The problem of present invention is solved is that in the prior art, it is high to form the complex process of imaging sensor, cost, and exist compared with
Big dark current.
To solve the above problems, the present invention provides a kind of forming method of imaging sensor, including：Wafer is provided；Institute
State each transistor of wafer frontside formation image element circuit；Dielectric layer is formed on the wafer and transistor, and positioned at described
Interconnection structure in dielectric layer, each described transistor is connected by the interconnection structure, forms image element circuit；Form pixel electricity
Lu Hou, bearing structure is formed on the dielectric layer；Formed after the bearing structure, overturn the wafer, make the wafer
The back side is upward；Patterned mask layer is formed at the back side of the wafer, the patterned mask layer defines the position of diffsuin stack
Put；Using the patterned mask layer as mask, the wafer is doped, diffsuin stack is formed in the wafer, it is described
Diffsuin stack is connected with the image element circuit；Remove the patterned mask layer；Remove after the patterned mask layer, in institute
The back side for stating wafer forms photodiode.
Optionally, the bearing structure is wafer, polysilicon chip or sheet glass.
Optionally, formed after the photodiode, in addition to：Optical filter is formed on the photodiode.
Optionally, formed after the optical filter, in addition to：Isolation structure, the isolation are formed between adjacent two pixel
The bottom of structure is located at the bottom of the photodiode；Or, the bottom of the isolation structure is located in the wafer.
Optionally, the method for forming isolation structure is：Patterned mask layer, the figure are formed on the optical filter
The mask layer of change defines the position of isolation structure；Performed etching using the patterned mask layer as mask, form isolated groove；
Remove the patterned mask layer；Isolated material, the isolated material and the optical filter are filled in the isolated groove
Upper surface it is equal；Or, depositing isolation material in the isolated groove and on the optical filter, the isolated material is higher by
The isolated groove.
Optionally, after isolated groove is formed, before filling isolated material, in addition to：In the isolating trenches groove sidewall
P-type doped region is formed with bottom.
Optionally, it is in the method for the isolating trenches groove sidewall and bottom formation p-type doped region：To the isolated groove side
Wall and bottom carry out p-type and adulterate to form p-type doped region；Or, in the isolating trenches groove sidewall and bottom deposit or epitaxial growth
One layer of p-type thin film layer is used as p-type doped region.
Optionally, the thickness of the p-type doped region is
Optionally, the impurity of doping is B or BF in the p-type doped region2。
Optionally, the isolated material is the one or more in silica, silicon oxynitride, silicon nitride or polymer.
Optionally, the isolated material is equal with the upper surface of the optical filter, after isolation structure is formed, also wraps
Include：Protective layer is formed on the optical filter.
Optionally, the material of the protective layer is one kind or several in silica, silicon oxynitride, silicon nitride or polymer
Kind.
Optionally, after the wafer is overturn, before the back side of the wafer forms patterned mask layer, also wrap
Include：The wafer is thinned.
Optionally, the method for forming photodiode is：Using epitaxial growth method or sedimentation at the back side of the wafer
Form the first film layer adulterated with n-type；Formed and mixed with p-type on the first film layer using epitaxial growth method or sedimentation
The second miscellaneous film layer, the first film layer and second film layer constitute the photodiode.
Optionally, the impurity of doping is p-type impurity in the diffsuin stack.
Optionally, image element circuit follows transistor including reset transistor, transmission transistor, row gating transistor and source.
Optionally, the wafer frontside has p-type thin film layer, the reset transistor, transmission transistor, row gating crystal
Pipe and source follow transistor to be located in the p-type thin film layer.
Compared with prior art, technical scheme has advantages below：
The technical program is initially formed image element circuit in the wafer, and the formation of photodiode is placed in form pixel electricity
After road.This technique adjustment at least has advantages below：
First, simplify the technique to form described image sensor.In the prior art, photodiode is initially formed, then
Image element circuit is re-formed, when forming image element circuit, it is necessary to overturn wafer；Formed after the image element circuit, it is necessary to overturn again
Wafer, so that the photodiode is located at top.The technical program, it is only necessary to overturn wafer once, just can complete image
The making of sensor, makes technique become simple.
Secondly, the use of wafer is saved.In the prior art, it is necessary to which figure could be completed by the operation for overturning wafer twice
As the making of sensor, upset is required for the bearing structure for using wafer as bottom every time, therefore forms image sensing
Device needs to use three wafers.The technical program at most only uses two wafers due to only needing to upset wafer once.Relative to
Prior art, the technical program saves the use of wafer, therefore reduces process costs.
Further, the technical program forms isolation structure in described image sensor, can reduce in imaging sensor
Dark current.
Further, p-type doped region is formed in the isolating trenches groove sidewall and bottom so that photodiode is isolated with described
Structure is separated, and can effectively reduce the dark current of imaging sensor.
Brief description of the drawings
Fig. 1 to Fig. 5 is the cross-sectional view of the forming method of imaging sensor in the prior art；
Fig. 6 to Figure 13 is the cross-sectional view of the forming method of imaging sensor in first embodiment of the invention；
Figure 14 is the cross-sectional view of the forming method of imaging sensor in second embodiment of the invention；
Figure 15 is the cross-sectional view of the forming method of imaging sensor in third embodiment of the invention.
Embodiment
In the prior art, using photodiode is initially formed, then image element circuit is re-formed, it is necessary to overturn the first wafer 1
The making of imaging sensor could be completed twice so that complex process.Secondly, the first wafer 1 of each upset will use a piece of
Wafer makes imaging sensor and at least needs to use three wafers as bearing structure so that technique it is costly.
Practice also found, in the prior art, due to not forming isolation structure between each pixel of imaging sensor, can cause
The light that inciding the light in pixel can enter between adjacent pixel, and then adjacent pixel through the pixel can be interfered.
Larger dark current can also be caused by not forming isolation structure between each pixel of imaging sensor.
Therefore, the present invention provides a kind of forming method of imaging sensor, it can effectively solve in the prior art, to form figure
Complex process, cost as sensor is high, and there is the problem of larger dark current.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
First embodiment
The present embodiment provides a kind of forming method of picture sensor, comprises the following steps：
With reference to Fig. 6, there is provided wafer 110.
In a particular embodiment, the front of wafer 110 includes p-type doped layer 111.
The material of the wafer 110 can be silicon, SiGe, silicon-on-insulator（Silicon on insulator, referred to as
SOI）Deng conventional semi-conducting material.
With reference to Fig. 7, each transistor of image element circuit is formed in the front of wafer 110；And in the wafer 110 and crystalline substance
Dielectric layer 130, and the interconnection structure 101 in the dielectric layer 130 are formed on body pipe；Each described transistor passes through described
Interconnection structure 101 is connected, and forms image element circuit.
In a particular embodiment, each described transistor is formed on the p-type doped layer 111.
Only symbolically show that transmission transistor 121 and source follow transistor 122, and transmission transistor 121 in Fig. 7
And source follows the annexation between transistor 122.The source electrode of the transmission transistor 121 follows transistor 122 with the source
Grid be connected.
In existing imaging sensor, image element circuit includes three, four or five transistors.It is any can be from photoelectricity
Diode is read and the image element circuit of transfer charge may be used to the technical program.Wherein most commonly seen is four transistors
Combination, they are that reset transistor, transmission transistor, row gating transistor and source follow transistor respectively.
It is CMOS general in the prior art to form the method for the image element circuit（Complementary metal oxide semiconductor）Work
Skill, has been known technology, is described again here.
With reference to Fig. 8, bearing structure 112 is formed on the dielectric layer 130；Formed after bearing structure 112, overturn the crystalline substance
Circle, makes the back side of the wafer upward.
In a particular embodiment, after the wafer is overturn, in addition to：The wafer is thinned.The thinned method
For etching or it can polish.With reference to Fig. 8, in a particular embodiment, after the wafer is thinned, only remaining p-type doped layer 111.
In a particular embodiment, the bearing structure 112 is wafer, polysilicon chip or sheet glass.Due to polysilicon chip and
Sheet glass is general more cheap than wafer, if the bearing structure 112 is polysilicon chip or sheet glass, it is possible to reduce the use of wafer,
Reduce the cost of technique.
When the bearing structure 112 is wafer, it can be combined by direct oxidation, or by adhesive by the wafer key
Close on the dielectric layer 130.
With reference to Fig. 9, patterned mask layer 140 is formed on the back side of the wafer, is only left p after being thinned due to wafer
Type doped layer 111, accordingly, patterned mask layer 140 are formed directly into the back side of p-type doped layer 111.It is described patterned
Mask layer 140 defines the position of diffsuin stack.
Then, it is mask with patterned mask layer 140, the p-type doped layer 111 is doped, mixed in the p-type
Diffsuin stack 150 is formed in diamicton 111, the diffsuin stack 150 is connected with the image element circuit.
In a particular embodiment, the diffsuin stack 150 is connected with the drain electrode of the transmission transistor 121.
The impurity of doping is p-type impurity in the diffsuin stack 150.
With reference to Figure 10, the patterned mask layer 140 is removed（With reference to Fig. 9）, afterwards, on the p-type doped layer 111
Photodiode is formed, the photodiode is made up of the first film layer 161 and the second film layer 162.Form the photoelectricity two
After pole pipe, in addition to：Optical filter 170 is formed in second film layer 162.
In a particular embodiment, the method for forming photodiode is：
The first film layer 161 is formed on the p-type doped layer 111 using epitaxial growth method or sedimentation；Forming institute
The doping of n-type original position is carried out during stating the first film layer 161 to it；Or, after the first film layer 161 is formed, using from
Sub- injection method or thermal diffusion method carry out n-type doping to the first film layer 161.
Using epitaxial growth method or sedimentation the second film layer 162 is formed on the first film layer 161 after doping；In shape
The doping of p-type original position is carried out to it into the period of the second film layer 162；Or, after second film layer 162 is formed, make
P-type doping is carried out to second film layer 162 with ion implantation or thermal diffusion method.
The second film layer 162 after the first film layer 161 and doping after doping constitutes photodiode.In addition, this
Technical scheme can also use the photodiode of any other type.
The optical filter 170 can be Red lightscreening plate, green color filter or blue color filter.The pattern of optical filter 170
It can be Bel's figure（Bayer pattern）, Bel derive figure（Bayer derivative pattern）, or it is known in the art
Any other type filter pattern.
In a particular embodiment, formed after the optical filter 170, in addition to：Isolation junction is formed between adjacent two pixel
Structure, specific forming method is：
With reference to Figure 11, patterned mask layer 141, the patterned mask layer 141 are formed on the optical filter 170
Define the position of isolation structure；
Then, performed etching with the patterned mask layer 141 for mask, form isolated groove 180, the isolating trenches
The bottom of groove 180 is located at the bottom of the photodiode.Wherein, the bottom of the photodiode refers to the first film
The lower surface of layer 161.
In Figure 11, the bottom of the isolated groove 180 is located at the bottom of the photodiode；In other embodiments,
The bottom of the isolated groove 180 is located in the wafer.
Then, with reference to Figure 12, the patterned mask layer 141 is removed；And the filling isolation in the isolated groove 180
Material, the isolated material is equal with the upper surface of the optical filter 170, forms isolation structure 181.
In a particular embodiment, the method for depositing isolation material is in the isolated groove 180：
Using physical vapour deposition (PVD), chemical vapor deposition or atomic layer deposition method in the isolated groove 180 and institute
State the upper surface of optical filter 170 and form one layer of spacer material layer, the spacer material layer is higher by the isolated groove 180；Then adopt
The part spacer material layer is removed with chemical mechanical polishing method, exposes the upper surface of the optical filter 170, is only retained in described
Isolated material in isolated groove 180.
In a particular embodiment, the isolated material be silica, silicon oxynitride, silicon nitride or polymer in one kind or
It is several.It can also be other materials known in the art.
The isolation structure 181 can avoid incident light from entering adjacent pixel, and then avoid light between adjacent pixel
Interfere；The isolation structure 181 can be such that incident light returns in photodiode with reflected light, and then improve photoelectricity two
The light capture ability of pole pipe.
In other embodiments, the bottom of the isolation structure 181 is located in the wafer.At this moment, the isolation structure
181 can also avoid between adjacent pixel electric interfere.Electric the interfering refers to two pixels operationally, electricity
Stream enters adjacent pixel.
With reference to Figure 13, after isolation structure 181 is formed, protective layer 190 is formed on the optical filter 170.It is described to protect
The material of sheath 190 is the one or more in silica, silicon oxynitride, silicon nitride or polymer.
The protective layer 190 is used to protect the photodiode, makes its injury-free.
The operation principle of the imaging sensor of the technical program is as follows：
With reference to Figure 13, incident light passes through the protective layer 190, and into optical filter 170, the optical filter 170 selects specific
The light of color enters photodiode, and the photodiode converts light to electric charge.
Electric charge is transferred to transmission transistor 121 by diffsuin stack 150, and is arrived electric charge storage by transmission transistor 121
The source electrode of transmission transistor 121.Then, electric charge follows transistor 122 to shift the picture number acquired by photodiode by source
According to.
The technical program is initially formed image element circuit, then re-forms photodiode.Only need to overturn the wafer 110 1
It is secondary, the making of imaging sensor just can be completed, simplifies process complexity.Secondly, the wafer 110 is overturn every time and is required for
Bearing structure 112 using wafer as bottom, the technical program overturns the wafer 110 once due to only needing to, most
The many wafers of use two.Relative to prior art, the technical program saves the use of wafer, thus reduce technique into
This.
Second embodiment
The difference of second embodiment and first embodiment is：
With reference to Figure 14, depositing isolation material in the isolated groove and on the optical filter 170, the isolated material is high
Go out the isolated groove.The isolated material of the isolated groove is higher by as protective layer.
Other information, with reference to first embodiment.
3rd embodiment
The difference of 3rd embodiment and first embodiment is, with reference to Figure 15, after isolated groove 180 is formed, filling
Before isolated material, in addition to：P-type doped region 102 is formed in the side wall of isolated groove 180 and bottom.
In a particular embodiment, the method for forming p-type doped region 102 is：In the isolating trenches groove sidewall and bottom deposit
Or one layer of p-type thin film layer of epitaxial growth is used as p-type doped region 102.
The presence of the p-type doped region 102 causes the photodiode to be separated with the isolation structure, effectively prevents
The generation of dark current.Dark current is, when light does not enter into photodiode, the electricity in another region to be moved to from photodiode
What son was produced.Dark current is typically found on the contact surface of photodiode and the isolation structure.If photodiode with
The isolation structure is directly contacted, and larger dark current can be produced in photodiode, and this can have a strong impact on imaging sensor
Performance, and reduce the charge storage of imaging sensor.
In a particular embodiment, the thickness of the p-type doped region 102 is, in the p-type doped region 102
The impurity of doping is B or BF2。
In other embodiments, forming the method for p-type doped region can also be：
P-type is carried out to the side wall of isolated groove 180 and bottom to adulterate to form p-type doped region, the method for carrying out p-type doping
Can be ion implanting or thermal diffusion.The p-type doped region makes to have carried out the first thin of n-type doping close to isolated groove 180
Film layer 161 changes into p-type doped region.
Other information, with reference to first embodiment.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, are not departing from this
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (17)
1. a kind of forming method of imaging sensor, it is characterised in that including：
Wafer is provided；
In each transistor of wafer frontside formation image element circuit；
Dielectric layer, and the interconnection structure in the dielectric layer, each described crystal are formed on the wafer and transistor
Pipe is connected by the interconnection structure, forms image element circuit；
Formed after image element circuit, bearing structure is formed on the dielectric layer；
Formed after the bearing structure, overturn the wafer, make the back side of the wafer upward；
Patterned mask layer is formed at the back side of the wafer, the patterned mask layer defines the position of diffsuin stack；
Using the patterned mask layer as mask, the wafer is doped, diffsuin stack is formed in the wafer, it is described
Diffsuin stack is connected with the image element circuit；
Remove the patterned mask layer；
Remove after the patterned mask layer, photodiode is formed at the back side of the wafer.
2. the forming method of imaging sensor as claimed in claim 1, it is characterised in that the bearing structure is wafer, many
Crystal silicon chip or sheet glass.
3. the forming method of imaging sensor as claimed in claim 1, it is characterised in that formed after the photodiode,
Also include：Optical filter is formed on the photodiode.
4. the forming method of imaging sensor as claimed in claim 3, it is characterised in that formed after the optical filter, also wrapped
Include：
Isolation structure is formed between adjacent two pixel, the bottom of the isolation structure is located at the bottom of the photodiode；
Or, the bottom of the isolation structure is located in the wafer.
5. the forming method of imaging sensor as claimed in claim 4, it is characterised in that the method for forming isolation structure is：
Patterned mask layer is formed on the optical filter, the patterned mask layer defines the position of isolation structure；
Performed etching using the patterned mask layer as mask, form isolated groove, the bottom of the isolated groove is located at institute
State the bottom of photodiode；Or, the bottom of the isolated groove is located in the wafer；
Remove the patterned mask layer；
Isolated material is filled in the isolated groove, the isolated material is equal with the upper surface of the optical filter；
Or, depositing isolation material in the isolated groove and on the optical filter, the isolated material is higher by the isolation
Groove.
6. the forming method of imaging sensor as claimed in claim 5, it is characterised in that after isolated groove is formed, fill out
Fill before isolated material, in addition to：P-type doped region is formed in the isolating trenches groove sidewall and bottom.
7. the forming method of imaging sensor as claimed in claim 6, it is characterised in that at the isolating trenches groove sidewall and bottom
Portion formed p-type doped region method be：
P-type is carried out to the isolating trenches groove sidewall and bottom to adulterate to form p-type doped region；Or,
P-type doped region is used as in the isolating trenches groove sidewall and bottom deposit or one layer of p-type thin film layer of epitaxial growth.
8. the forming method of imaging sensor as claimed in claim 6, it is characterised in that the thickness of the p-type doped region is。
9. the forming method of imaging sensor as claimed in claim 6, it is characterised in that doping in the p-type doped region
Impurity is B or BF2。
10. the forming method of imaging sensor as claimed in claim 5, it is characterised in that the isolated material be silica,
One or more in silicon oxynitride, silicon nitride or polymer.
11. the forming method of imaging sensor as claimed in claim 5, it is characterised in that the isolated material and the filter
The upper surface of mating plate is equal, after isolation structure is formed, in addition to：Protective layer is formed on the optical filter.
12. the forming method of imaging sensor as claimed in claim 11, it is characterised in that the material of the protective layer is oxygen
One or more in SiClx, silicon oxynitride, silicon nitride or polymer.
13. the forming method of imaging sensor as claimed in claim 1, it is characterised in that after the wafer is overturn,
The back side of the wafer is formed before patterned mask layer, in addition to：The wafer is thinned.
14. the forming method of imaging sensor as claimed in claim 1, it is characterised in that the method for forming photodiode
For：
The first film layer adulterated with n-type is formed at the back side of the wafer using epitaxial growth method or sedimentation；
The second film layer adulterated with p-type, described first are formed on the first film layer using epitaxial growth method or sedimentation
Film layer and second film layer constitute the photodiode.
15. the forming method of imaging sensor as claimed in claim 14, it is characterised in that doping is miscellaneous in the diffsuin stack
Matter is p-type impurity.
16. the forming method of imaging sensor as claimed in claim 1, it is characterised in that image element circuit includes resetting crystal
Pipe, transmission transistor, row gating transistor and source follow transistor.
17. the forming method of imaging sensor as claimed in claim 16, it is characterised in that the wafer frontside has p-type
Film layer, the reset transistor, transmission transistor, row gating transistor and source follow transistor to be located at the p-type thin film layer
On.
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| CN101715083A (en) * | 2008-09-30 | 2010-05-26 | 东部高科股份有限公司 | Image sensor and manufacturing method of image sensor |
| CN102005460A (en) * | 2009-08-28 | 2011-04-06 | 索尼公司 | Solid-state imaging device, manufacturing method therefor, and electronic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101715083A (en) * | 2008-09-30 | 2010-05-26 | 东部高科股份有限公司 | Image sensor and manufacturing method of image sensor |
| CN102005460A (en) * | 2009-08-28 | 2011-04-06 | 索尼公司 | Solid-state imaging device, manufacturing method therefor, and electronic device |
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