CN104280085A - Gas flow sensor and manufacturing method thereof - Google Patents
Gas flow sensor and manufacturing method thereof Download PDFInfo
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- CN104280085A CN104280085A CN201410577281.7A CN201410577281A CN104280085A CN 104280085 A CN104280085 A CN 104280085A CN 201410577281 A CN201410577281 A CN 201410577281A CN 104280085 A CN104280085 A CN 104280085A
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Abstract
The invention discloses a gas flow sensor and a manufacturing method thereof. The gas flow sensor comprises a substrate, micro heating resistors, upstream micro-temperature-measuring resistors, downstream micro-temperature-measuring resistors and environmental resistors, wherein a groove is formed in the substrate chip; both ends of the micro heating resistors, the upstream micro-temperature-measuring resistors and the downstream micro-temperature-measuring resistors are fixedly arranged on the substrate and hung on the groove in a suspended beam structure; the upstream micro-temperature-measuring resistors and the downstream micro-temperature-measuring resistors are respectively arranged on two opposite sides of the micro heating resistors; and the environmental resistors are fixedly arranged on the substrate and are located on one side, which is provided with the upstream micro-temperature-measuring resistors, of the substrate. The gas flow sensor disclosed by the invention can be used for avoiding the heat loss caused by heat conduction of a thin film to the maximum extent, improving the heating efficiency of the micro heating resistors and simultaneously improving the gas flow detection sensitivity. The invention further discloses the manufacturing method of the gas flow sensor.
Description
Technical field
The present invention relates to MEMS (micro electro mechanical system) (MEMS) technical field, particularly relate to a kind of universal silica-based MEMS gas flow sensor of small-range being applied to the field such as medicine equipment, household fuel gas and preparation method thereof.
Background technology
Gas flow sensor, is mainly used in the fields such as medical electronics apparatus (such as lung ventilator, oxygenerator, Anesthesia machine etc.), industrial process gas flow control, domestic gas meter, motor car engine, indoor gas monitoring.In these areas, except technical grade gas flow monitor and forecast, the measurement range of gas flow generally at 100LPM (liter/min) below, is small-range gas flow measurement.And in small-range detection of gas flow rate field, gas flow sensor is divided into following several usually based on its measurement mechanism: mechanical turbine formula, float-type, ultrasonic type, differential, heat-conducted etc.Wherein mechanical turbine formula and float-type are formed by the mechanical part with certain size, so volume is comparatively large and not high to the gas detect sensitivity of low discharge.Ultrasonic type is development in recent years more a kind of flow sensor, but sound wave energy loss in gas is comparatively large, makes it have the shortcoming that power consumption is large.Differential flow sensor utilizes upstream and downstream gas pressure difference to reflect the size of gas flow, and this metering system needs two identical and tool pressure transducers at regular intervals, therefore there are certain requirements pipe design and size tool.
Patent based on heat-conducted small-range gas flow sensor product has: (1) patent US7536908 B2 and (2) patent WO2014011277 A2, these two patents all adopt MEMS micro Process bulk silicon etching fabrication techniques free standing structure film type heat-conducted gas flow sensor chip.For these two inventions, micro-heating resistor and temperature detecting resistance are on same continuous print film, heat propagation mode between micro-heating resistor and temperature detecting resistance mainly caused by the heat transfer of film, and the thermal convection propagation that gas flow causes only accounts for wherein sub-fraction, therefore the temperature detecting resistance temperature variation caused by gas flow is not fairly obvious, and measurement sensistivity is limited.On the other hand, continuous film heat transfer make micro-heating resistor produce heat loss comparatively large, cause the power consumption of device can not do less.
Summary of the invention
Based on above-mentioned purpose, the present invention proposes a kind of gas flow sensor and preparation method thereof, its detection sensitivity farthest can avoided the heat loss caused by film thermal conduction, improve micro-heating resistor efficiency of heating surface, improve gas flow simultaneously.
The present invention realizes like this, a kind of gas flow sensor, it comprises substrate base (5), at least one micro-heating resistor (1), the micro-temperature detecting resistance at least one upstream (3), the micro-temperature detecting resistance at least one downstream (2), at least one ambient resistance (6); Wherein, substrate base (5) offers groove (4); The two ends at least one micro-heating resistor (1), the micro-temperature detecting resistance at least one upstream (3), the micro-temperature detecting resistance at least one downstream (2) are all fixed on substrate base (5) and above hang oneself from a beam upper in overarm type structure in groove (4), and the micro-temperature detecting resistance at least one upstream (3) and the micro-temperature detecting resistance at least one downstream (2) lay respectively on the relative both sides of at least one micro-heating resistor (1); At least one ambient resistance (6) is fixed on substrate base (5), and is positioned at substrate base (5) and has on the side of the micro-temperature detecting resistance at least one upstream (3).
As the further improvement of such scheme, substrate base (5) is monocrystalline silicon, one in polysilicon, metal substrate, RF magnetron sputtering, PCB substrate.
As the further improvement of such scheme, the outside surface of at least one micro-heating resistor (1), the micro-temperature detecting resistance at least one upstream (3), the micro-temperature detecting resistance at least one downstream (2), at least one ambient resistance (6) is all coated with one deck dielectric film (8), and dielectric film (8) is the membraneous material with insulation characterisitic.
The present invention also provides another kind of gas flow sensor, and it comprises substrate base (5), at least one micro-heating resistor (1), the micro-temperature detecting resistance at least one upstream (3), the micro-temperature detecting resistance at least one downstream (2), at least one ambient resistance (6); Wherein, substrate base (5) offers groove (4); The two ends at least one micro-heating resistor (1), the micro-temperature detecting resistance at least one upstream (3), the micro-temperature detecting resistance at least one downstream (2) are all fixed on substrate base (5) and above hang oneself from a beam upper in overarm type structure in groove (4), and the micro-temperature detecting resistance at least one upstream (3) and the micro-temperature detecting resistance at least one downstream (2) lay respectively on the relative both sides of at least one micro-heating resistor (1); At least one ambient resistance (6) is fixed on substrate base (5), and is positioned at substrate base (5) and has on the side of the micro-temperature detecting resistance at least one upstream (3).The encapsulation of this gas flow sensor forms chip, and the pin of lead-in wire as this chip is all drawn at the two ends of at least one micro-heating resistor (1), the micro-temperature detecting resistance at least one upstream (3), the micro-temperature detecting resistance at least one downstream (4), at least one ambient resistance (6).
As the further improvement of such scheme, substrate base (5) is monocrystalline silicon, one in polysilicon, metal substrate, RF magnetron sputtering, PCB substrate.
As the further improvement of such scheme, the outside surface of at least one micro-heating resistor (1), the micro-temperature detecting resistance at least one upstream (3), the micro-temperature detecting resistance at least one downstream (2), at least one ambient resistance (6) is all coated with one deck dielectric film (8), and dielectric film (8) is the membraneous material with insulation characterisitic.
The present invention also provides the method for making of any one gas flow sensor above-mentioned, and it comprises the following steps:
Prepare a slice initial substrate substrate (7);
By the dielectric film (8) of MEMS thin film deposition processes at initial substrate substrate (7) upper deposition ground floor;
MEM patterning process is utilized to be prepared into above dielectric film (8) respectively by the metallic resistance structure of at least one micro-heating resistor (1), the micro-temperature detecting resistance at least one upstream (3), the micro-temperature detecting resistance at least one downstream (2), at least one ambient resistance (6);
Utilize MEMS thin film deposition processes in all metallic resistance structures, deposit the dielectric film (8) of the second layer;
Utilize MEMS film lithographic technique to be removed by the dielectric film between at least one micro-heating resistor (1), the micro-temperature detecting resistance at least one upstream (3), the micro-temperature detecting resistance at least one downstream (2), form the corrosion release window of substrate;
MEMS bulk silicon etching technology is utilized the silicon base of at least one micro-heating resistor (1), the micro-temperature detecting resistance at least one upstream (3), below, the micro-temperature detecting resistance at least one downstream (2) to be emptied, make corrosion discharge window and form groove (4), thus form discrete overarm type metallic resistance structure respectively.
As the further improvement of such scheme, MEMS thin film deposition processes is oxidation or low-pressure chemical vapor deposition LPCVD or plasma reinforced chemical vapour deposition PECVD or sol gel process or organic material coating curing process.
As the further improvement of such scheme, MEM patterning process is photoetching process or focused-ion-beam lithography FIB or laser scanning etching technics.
As the further improvement of such scheme, MEMS film etching technics is reactive ion etching RIE or inductive coupling reactive ion etching ICP or ion beam etching IonBeam or wet etching or focused-ion-beam lithography FIB or laser scanning etching.
As the further improvement of such scheme, MEMS bulk silicon etching technology is potassium hydroxide KOH solution corrosion or tetramethyl aqua ammonia TMAH solution corrosion or the corrosion of xenon fluoride XeF silicon materials.
As the further improvement of such scheme, substrate base (5) is monocrystalline silicon or polysilicon or metal substrate or RF magnetron sputtering or PCB substrate, and metallic resistance structured material is the metal material with heat characteristic or thermometric characteristic.
The present invention adopts the micro-electric resistance structure of overarm type, micro-heating resistor and micro-temperature detecting resistance discrete, avoid the heat loss caused by continuous film heat transfer, thus greatly improve the detection sensitivity of MEMS heat-conducted gas flow sensor and reduce power consumption, this chip structure and technique simple, dependable performance, compact conformation.Particularly based on air heat convective principles, adopt suspension beam structure and the gas flow sensor made by bulk silicon etching technique, the flow sensor of contrast these types above, heat-conducted flow sensor involved in the present invention adopts thermal convection effect to measure gas flow, and MEMS micro fabrication can be utilized to be made.Miniature resistive heater and temperature detecting resistance are integrated in the middle of same MEMS microsensor chip, there is the many merits such as volume is little, power consumption is little, cost is low, sensitivity is high.
Accompanying drawing explanation
Fig. 1 is the plan structure schematic diagram of gas flow sensor of the present invention.
Fig. 2 be in Fig. 1 gas flow sensor along hatching line a-b cross-sectional schematic and work time corresponding gas temperature distribution curve schematic diagram.
The MEMS technology schematic flow sheet that Fig. 3 (A), 3 (B), 3 (C), 3 (D), 3 (E), 3 (F) are gas flow sensor in Fig. 1.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Gas flow sensor of the present invention can be the silica-based MEMS gas flow sensor of universal low-power consumption, and its structural representation as shown in Figures 1 and 2.Gas flow sensor comprises substrate base 5, at least one micro-heating resistor 1, the micro-temperature detecting resistance at least one upstream 3, the micro-temperature detecting resistance 2 at least one downstream, at least one ambient resistance 6, wherein, micro-heating resistor 1, the micro-temperature detecting resistance in upstream 3, the micro-temperature detecting resistance 2 in downstream, their quantity of ambient resistance 6 are all illustrated for 1.
The low materials of various lining such as substrate base 5 offers groove 4, and substrate base 5 can be monocrystalline silicon, polysilicon, low, the organic lining of metal liner is low, PCB lining is low.
The two ends of micro-heating resistor 1, the micro-temperature detecting resistance in upstream 3, the micro-temperature detecting resistance 2 in downstream are all fixed on substrate base 5 hangs oneself from a beam in overarm type structure on groove 4, and the micro-temperature detecting resistance in upstream 3, the micro-temperature detecting resistance in downstream 2 lay respectively on the relative both sides of micro-heating resistor 1.Ambient resistance 6 is fixed on substrate base 5, and is positioned at substrate base 5 and has on the side of the micro-temperature detecting resistance 2 in upstream.The resistance material of micro-heating resistor 1, the micro-temperature detecting resistance in upstream 3, the micro-temperature detecting resistance in downstream 2, ambient resistance 6 can be all the various metal material with heat characteristic or thermometric characteristic such as Pt, Ni, Au, Al, Cu.
Gas flow sensor can encapsulate formation chip, and the pin of lead-in wire as this chip is all drawn at the two ends of micro-heating resistor 1, the micro-temperature detecting resistance in upstream 3, the micro-temperature detecting resistance 2 in downstream, ambient resistance 6.The outside surface of micro-heating resistor 1, the micro-temperature detecting resistance in upstream 3, the micro-temperature detecting resistance 2 in downstream, ambient resistance 6 is all coated with one deck dielectric film 8, dielectric film 8 is the various membraneous materials with insulation characterisitic such as silicon dioxide film, silicon nitride film, silicon dioxide and silicon nitride composite membrane, organic film, and thickness range is 1nm to 100 micron.
As can see from Figure 2, after the bulk silicon etching release of MEMS micro fabrication, micro-heating resistor 1, the micro-temperature detecting resistance in upstream 3, the micro-temperature detecting resistance 2 in downstream are suspended on above the groove 4 of substrate (i.e. substrate base 5) completely, and bridge on groove 4, form discrete mutually isolated structure.
When gas flow sensor works, if the gas flow rate above gas flow sensor is zero, so gas is completely static, and the temperature distribution history of gas is for shown in block curve.Temperature Distribution is now that upstream and downstream is symmetrical, the heat of the micro-heating resistor 1 in center propagates into upstream temperature detecting resistance 3 and downstream temperature detecting resistance 2 by the thermal diffusion of gas itself completely, because the micro-temperature detecting resistance in upstream 3, the micro-temperature detecting resistance in downstream 2 are identical with the distance of the micro-heating resistor in center 1, therefore upstream and downstream temperature detecting resistance 3 is identical with the temperature of 2, does not have the temperature difference.If the gas above gas flow sensor flows like that according to diagram gas direction, the symmetry of Temperature Distribution will be broken, now the heat that produces of the micro-heating resistor 1 in center is except being delivered to upstream and downstream temperature detecting resistance 3 and 2 due to thermal diffusion, also because the flowing of gas makes the heat being delivered to downstream temperature detecting resistance 2 more than the heat being delivered to upstream temperature detecting resistance 3, cause whole temperature curve to be vacillated downwards and dynamic become the curve shown in dotted line.Therefore the temperature of upstream temperature detecting resistance 3 will be lower than the temperature of downstream temperature detecting resistance 2, creates the temperature difference.And upstream and downstream temperature extent directly can be measured by the resistance difference of upstream and downstream temperature detecting resistance 3 and 2.Temperature difference size increases along with the increase of gas flow rate, therefore directly can reflect the size of gas flow.On the other hand, the temperature of environment can directly utilize ambient resistance 6 directly measure and compensate, thus can eliminate the impact of gas temperature fluctuation on measurement result, thus improves the precision of flow detection.
Above-mentioned principle is the common principle of heat-conducted MEMS gas flow sensor, and patent US7536908 B2 and patent WO2014011277 A2 make use of above-mentioned principle.But with existing heat-conducted MEMS detection of gas flow rate technology maximum unlike, be not on one piece of continuous print film between the micro-heating resistor in the center in the present invention 1 and the micro-temperature detecting resistance 3 and 2 of upstream and downstream, but present the mutually discrete structure of overarm type.The heat that the structural design of this novelty makes the micro-heating resistor in center produce can't be delivered to upstream and downstream temperature detecting resistance through the heat transfer of continuous film substrate, and be just delivered to upstream and downstream temperature detecting resistance by the thermal diffusion of gas and flowing, therefore the contribution of gas flowing to the upstream and downstream temperature difference can be significantly improved, improve the detection sensitivity of gas flow, also continuous film substrate can be avoided the heat dissipation of the micro-heating resistor in center simultaneously, obviously reduce the power consumption of gas flow sensor.
The silica-based MEMS gas flow sensor of low-power consumption of the present invention utilizes MEMS mass micro fabrication to be made, and concrete technological process is as shown in Fig. 3 (A), 3 (B), 3 (C), 3 (D), 3 (E), 3 (F).
Processing step is described below.
As Fig. 3 (A), prepare a slice initial substrate substrate 7.The low materials of various lining such as initial substrate substrate 7 can be monocrystalline silicon, polysilicon, low, the organic lining of metal liner is low, PCB lining is low.
As Fig. 3 (B), on initial substrate substrate 7, deposited the dielectric film 8 of ground floor by MEMS thin film deposition processes.MEMS thin film deposition processes can be oxidation, low-pressure chemical vapor deposition (LPCVD), plasma reinforced chemical vapour deposition (PECVD), sol gel process, organic material coating curing process etc.Dielectric film 8 can be the various membraneous materials with insulation characterisitic such as silicon dioxide film, silicon nitride film, silicon dioxide and silicon nitride composite membrane, organic film, and thickness range is 1nm to 100 micron.
As Fig. 3 (C), MEM patterning process is utilized to be prepared into above dielectric film 8 by the associated metal conductor structures such as micro-heating resistor 1, upstream and downstream temperature detecting resistance 3 and 2, ambient resistance 6.Patterning process can be the pattern technologies such as photoetching process, focused-ion-beam lithography (FIB), laser scanning etching technics.Resistance material can be the various metal material with heat characteristic or thermometric characteristic such as Pt, Ni, Au, Al, Cu.
As Fig. 3 (D), MEMS thin film deposition processes is utilized on all electric resistance structures, to deposit the dielectric film 8 of the second layer to protect all metallic resistance structures not by ectocine, to increase long-time stability and the reliability of device.MEMS thin film deposition processes can be oxidation, low-pressure chemical vapor deposition (LPCVD), plasma reinforced chemical vapour deposition (PECVD), sol gel process, organic material coating curing process etc.
As Fig. 3 (E), utilize MEMS film lithographic technique to be removed by the dielectric film 8 between micro-heating resistor 1, upstream and downstream temperature detecting resistance 3 and 2, form the corrosion release window of silicon base.MEMS film etching technics can be the various lithographic techniques such as reactive ion etching (RIE), inductive coupling reactive ion etching (ICP), ion beam etching (IonBeam), wet etching, focused-ion-beam lithography (FIB), laser scanning etching.
As Fig. 3 (F), utilize MEMS bulk silicon etching technology the silicon base below micro-heating resistor 1, upstream and downstream temperature detecting resistance 3 and 2 to be emptied, thus form discrete overarm type metallic resistance structure.MEMS bulk silicon etching technology can be the various silicon materials corrosion technologies such as potassium hydroxide (KOH) solution corrosion, tetramethyl aqua ammonia (TMAH) solution corrosion, xenon fluoride (XeF).
The maximum innovative point of silica-based MEMS gas flow sensor of the present invention is being the discrete micro-electric resistance structure of overarm type be made by MEMS technology with the micro-heating resistor in center and upstream and downstream temperature detecting resistance, heat propagation mode between the micro-heating resistor in center 1 to upstream and downstream temperature detecting resistance 3,2 is the thermal diffusion of gas and flowing mainly, can farthest avoid film thermal conduct caused by heat loss, the detection sensitivity that improves micro-heating resistor efficiency of heating surface, improve gas flow simultaneously.This sensor has that structure is simple, technique is simple, cost is low, can many-sided advantage such as mass, power consumption be extremely low.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a gas flow sensor, it comprises substrate base (5), at least one micro-heating resistor (1), the micro-temperature detecting resistance at least one upstream (3), the micro-temperature detecting resistance at least one downstream (2), at least one ambient resistance (6); It is characterized in that:
Substrate base (5) offers groove (4);
The two ends at least one micro-heating resistor (1), the micro-temperature detecting resistance at least one upstream (3), the micro-temperature detecting resistance at least one downstream (2) are all fixed on substrate base (5) and above hang oneself from a beam upper in overarm type structure in groove (4), and the micro-temperature detecting resistance at least one upstream (3) and the micro-temperature detecting resistance at least one downstream (2) lay respectively on the relative both sides of at least one micro-heating resistor (1);
At least one ambient resistance (6) is fixed on substrate base (5), and is positioned at substrate base (5) and has on the side of the micro-temperature detecting resistance at least one upstream (3).
2. a gas flow sensor, it is characterized in that: it is encapsulate by gas flow sensor as claimed in claim 1 the chip formed, the pin of lead-in wire as this chip is all drawn at the two ends of at least one micro-heating resistor (1), the micro-temperature detecting resistance at least one upstream (3), the micro-temperature detecting resistance at least one downstream (4), at least one ambient resistance (6).
3. gas flow sensor as claimed in claim 1 or 2, is characterized in that: substrate base (5) is monocrystalline silicon, one in polysilicon, metal substrate, RF magnetron sputtering, PCB substrate.
4. gas flow sensor as claimed in claim 1 or 2, it is characterized in that: the outside surface of at least one micro-heating resistor (1), the micro-temperature detecting resistance at least one upstream (3), the micro-temperature detecting resistance at least one downstream (2), at least one ambient resistance (6) is all coated with one deck dielectric film (8), and dielectric film (8) is the membraneous material with insulation characterisitic.
5. a method for making for gas flow sensor as claimed in claim 1 or 2, is characterized in that: it comprises the following steps:
Prepare a slice initial substrate substrate (7);
By the dielectric film (8) of MEMS thin film deposition processes at initial substrate substrate (7) upper deposition ground floor;
MEM patterning process is utilized to be prepared into above dielectric film (8) respectively by the metallic resistance structure of at least one micro-heating resistor (1), the micro-temperature detecting resistance at least one upstream (3), the micro-temperature detecting resistance at least one downstream (2), at least one ambient resistance (6);
Utilize MEMS thin film deposition processes in all metallic resistance structures, deposit the dielectric film (8) of the second layer;
Utilize MEMS film lithographic technique to be removed by the dielectric film between at least one micro-heating resistor (1), the micro-temperature detecting resistance at least one upstream (3), the micro-temperature detecting resistance at least one downstream (2), form the corrosion release window of substrate;
MEMS bulk silicon etching technology is utilized the silicon base of at least one micro-heating resistor (1), the micro-temperature detecting resistance at least one upstream (3), below, the micro-temperature detecting resistance at least one downstream (2) to be emptied, make corrosion discharge window and form groove (4), thus form discrete overarm type metallic resistance structure respectively.
6. the method for making of gas flow sensor as claimed in claim 5, is characterized in that: MEMS thin film deposition processes is oxidation or low-pressure chemical vapor deposition LPCVD or plasma reinforced chemical vapour deposition PECVD or sol gel process or organic material coating curing process.
7. the method for making of gas flow sensor as claimed in claim 5, is characterized in that: MEM patterning process is photoetching process or focused-ion-beam lithography FIB or laser scanning etching technics.
8. the method for making of gas flow sensor as claimed in claim 5, is characterized in that: MEMS film etching technics is reactive ion etching RIE or inductive coupling reactive ion etching ICP or ion beam etching IonBeam or wet etching or focused-ion-beam lithography FIB or laser scanning etching.
9. the method for making of gas flow sensor as claimed in claim 5, is characterized in that: MEMS bulk silicon etching technology is potassium hydroxide KOH solution corrosion or tetramethyl aqua ammonia TMAH solution corrosion or the corrosion of xenon fluoride XeF silicon materials.
10. the method for making of gas flow sensor as claimed in claim 5, it is characterized in that: substrate base (5) is monocrystalline silicon or polysilicon or metal substrate or RF magnetron sputtering or PCB substrate, and metallic resistance structured material is the metal material with heat characteristic or thermometric characteristic.
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| CN105806430A (en) * | 2016-04-08 | 2016-07-27 | 东南大学 | Two-dimensional film gas flow sensor based on MEMS technology and processing method thereof |
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| CN108751122A (en) * | 2018-05-17 | 2018-11-06 | 中国科学院上海微系统与信息技术研究所 | A kind of three-dimensional micro-heater and preparation method thereof |
| CN110274649A (en) * | 2019-06-13 | 2019-09-24 | 武汉大学 | A kind of hot temperature difference type flow sensor and preparation method thereof based on MEMS technology |
| CN110274649B (en) * | 2019-06-13 | 2020-09-01 | 武汉大学 | Thermal temperature difference type flow sensor based on MEMS technology and preparation method thereof |
| CN111792618A (en) * | 2020-06-29 | 2020-10-20 | 中国人民解放军军事科学院国防科技创新研究院 | Micro thermal array based on heterogeneous driving unit and preparation method thereof |
| CN111792618B (en) * | 2020-06-29 | 2024-01-09 | 中国人民解放军军事科学院国防科技创新研究院 | Micro thermal array based on heterogeneous driving unit and preparation method thereof |
| WO2022156819A1 (en) * | 2021-01-25 | 2022-07-28 | The Hong Kong University Of Science And Technology | Liquid-based cmos mems micro thermal convective accelerometer |
| CN113340366A (en) * | 2021-06-08 | 2021-09-03 | 百易晟信息科技(苏州)有限公司 | Double-sided MEMS (micro-electromechanical system) thermal type gas flow sensor and manufacturing method thereof |
| CN115452076A (en) * | 2022-09-28 | 2022-12-09 | 浙江大学 | High-sensitivity thermal micro-flow sensor based on phase-change material |
| WO2024067123A1 (en) * | 2022-09-28 | 2024-04-04 | 浙江大学 | High-sensitivity thermal micro-flow sensor based on phase change material |
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